WO2023232077A1 - Substrat d'affichage et son procédé de préparation, écran d'affichage et appareil d'affichage - Google Patents
Substrat d'affichage et son procédé de préparation, écran d'affichage et appareil d'affichage Download PDFInfo
- Publication number
- WO2023232077A1 WO2023232077A1 PCT/CN2023/097438 CN2023097438W WO2023232077A1 WO 2023232077 A1 WO2023232077 A1 WO 2023232077A1 CN 2023097438 W CN2023097438 W CN 2023097438W WO 2023232077 A1 WO2023232077 A1 WO 2023232077A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- color resistor
- connection electrode
- insulating layer
- thin film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 186
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 83
- 238000009413 insulation Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 248
- 239000000463 material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 239000004973 liquid crystal related substance Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 239000003086 colorant Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 38
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000011358 absorbing material Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000003190 augmentative effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Definitions
- the plurality of pixel units include a first pixel unit, the thin film transistor is a first thin film transistor, the color resistor is a first color resistor, and the pixel electrode is a first pixel electrode. , and the connection electrode layer is the first connection electrode layer;
- the second via hole is filled with a filter material that has the same color as the color resist.
- Figure 13a shows a schematic diagram of an intermediate structure during preparation of an exemplary display substrate according to an embodiment of the present disclosure
- Figure 13k shows a schematic diagram of another intermediate structure during preparation of an exemplary display substrate according to an embodiment of the present disclosure
- the first thin film transistor 200a may be a vertical thin film transistor.
- it may include a drain layer 210a, a drain insulating layer 220a, a source layer 230a, an oxide semiconductor layer 240a, a source insulating layer 250a and a gate layer that are sequentially arranged in a direction away from the base substrate 100.
- the source layer 230a may include a first source electrode and a second source electrode, the first source electrode and the second source electrode are symmetrically arranged on both sides of the thin film transistor, and the first source electrode and the second source electrode are The second sources are arranged in the same layer. In this way, by arranging vertical thin film transistors, the aperture ratio of the display substrate can be increased to a certain extent, for example by about 10%, compared to ordinary thin film transistors in which the source layer and drain layer are arranged in the same layer.
- the first color resistor of the first pixel unit, the second color resistor of the second pixel unit, and the third color resistor of the third pixel unit may be arranged at intervals on the first insulating layer, or may be in phase. There is an overlapping arrangement between adjacent color resistors (for example, Figure 6), as long as the subsequent process can make the overlapping portion flat.
- FIG. 5 shows another structural schematic diagram of an exemplary display substrate according to an embodiment of the present disclosure.
- the second color resistor 320b can be red, and the third color resistor 320c can be blue; or the first color resistor 320a can be blue, the second color resistor 320b can be red, and the third color resistor 320c can be Green etc. In this way, the three can form a colored pixel unit.
- a first insulating layer (such as a first insulating layer 500a) is formed on the thin film transistor; the first insulating layer 500a is provided with a first via hole 510a corresponding to the first thin film transistor 200a.
- the first insulating layer 500a can be deposited on the gate layer 260a by chemical vapor deposition (CVD) or atomic layer deposition (ALD) to obtain the structure shown in FIG. 13f.
- the first insulating layer 500a may be a SiOx or SiOx/SiNx composite film layer with a thickness of about 1000 to 10000A.
- it also includes forming a second insulating layer 600a on the first color resistor, the second color resistor and the third color resistor; the second insulating layer 600a is provided with a layer corresponding to the thin film transistor 200a.
- the structure shown in Figure 13j or Figure 13k is obtained.
- a PLN layer with a thickness of 2 to 4 ⁇ m can be applied, the CF is planarized, and patterned as needed.
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
L'invention concerne un substrat d'affichage (10) et son procédé de préparation, un écran d'affichage et un appareil d'affichage. Un premier transistor en couches minces (200a) est disposé sur un substrat de base (100), et un premier trou d'interconnexion (510a) correspondant au premier transistor en couches minces (200a) est disposé dans une première couche d'isolation (500a) ; une première couche d'électrode de connexion (710a) est disposée sur une première réserve de couleur (320a) correspondant au premier transistor en couches minces (200a) ; une seconde couche d'isolation (600a) est pourvue d'un second trou d'interconnexion (620a) correspondant au premier transistor en couches minces (200a) ; et par conséquent une première électrode de pixel (410a) peut être électriquement connectée à la première couche d'électrode de connexion (710a) au moyen du second trou d'interconnexion (620a), et la première couche d'électrode de connexion (710a) peut être électriquement connectée à l'électrode de source du premier transistor en couches minces (200a) au moyen du premier trou d'interconnexion (510a).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210621901.7 | 2022-06-01 | ||
| CN202210621901.7A CN115268155B (zh) | 2022-06-01 | 2022-06-01 | 显示基板及其制备方法、显示面板及显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023232077A1 true WO2023232077A1 (fr) | 2023-12-07 |
Family
ID=83759570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2023/097438 WO2023232077A1 (fr) | 2022-06-01 | 2023-05-31 | Substrat d'affichage et son procédé de préparation, écran d'affichage et appareil d'affichage |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115268155B (fr) |
| WO (1) | WO2023232077A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115268155B (zh) * | 2022-06-01 | 2023-10-27 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示面板及显示装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700669A (zh) * | 2013-12-19 | 2014-04-02 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
| CN103779360A (zh) * | 2014-02-12 | 2014-05-07 | 鄂尔多斯市源盛光电有限责任公司 | 显示基板及其制作方法、显示装置 |
| CN105527767A (zh) * | 2016-01-25 | 2016-04-27 | 武汉华星光电技术有限公司 | 一种阵列基板以及液晶显示器 |
| CN106483726A (zh) * | 2016-12-21 | 2017-03-08 | 昆山龙腾光电有限公司 | 薄膜晶体管阵列基板及制作方法和液晶显示面板 |
| KR20210119598A (ko) * | 2020-03-24 | 2021-10-06 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN115268155A (zh) * | 2022-06-01 | 2022-11-01 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示面板及显示装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102084395B1 (ko) * | 2012-12-21 | 2020-03-04 | 엘지디스플레이 주식회사 | 유기전계 발광소자 및 이의 제조 방법 |
| CN109634014A (zh) * | 2019-02-22 | 2019-04-16 | 鄂尔多斯市源盛光电有限责任公司 | 一种显示基板及其制作方法、显示面板、显示装置 |
| CN111208677A (zh) * | 2020-03-16 | 2020-05-29 | Tcl华星光电技术有限公司 | 阵列基板及液晶显示面板 |
| CN114280868A (zh) * | 2022-01-04 | 2022-04-05 | 京东方科技集团股份有限公司 | 一种显示基板、显示面板和显示装置 |
-
2022
- 2022-06-01 CN CN202210621901.7A patent/CN115268155B/zh active Active
-
2023
- 2023-05-31 WO PCT/CN2023/097438 patent/WO2023232077A1/fr unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700669A (zh) * | 2013-12-19 | 2014-04-02 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
| CN103779360A (zh) * | 2014-02-12 | 2014-05-07 | 鄂尔多斯市源盛光电有限责任公司 | 显示基板及其制作方法、显示装置 |
| CN105527767A (zh) * | 2016-01-25 | 2016-04-27 | 武汉华星光电技术有限公司 | 一种阵列基板以及液晶显示器 |
| CN106483726A (zh) * | 2016-12-21 | 2017-03-08 | 昆山龙腾光电有限公司 | 薄膜晶体管阵列基板及制作方法和液晶显示面板 |
| KR20210119598A (ko) * | 2020-03-24 | 2021-10-06 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN115268155A (zh) * | 2022-06-01 | 2022-11-01 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示面板及显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115268155B (zh) | 2023-10-27 |
| CN115268155A (zh) | 2022-11-01 |
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