CN101825815A - Tft-lcd阵列基板及其制造方法 - Google Patents
Tft-lcd阵列基板及其制造方法 Download PDFInfo
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- CN101825815A CN101825815A CN 200910079289 CN200910079289A CN101825815A CN 101825815 A CN101825815 A CN 101825815A CN 200910079289 CN200910079289 CN 200910079289 CN 200910079289 A CN200910079289 A CN 200910079289A CN 101825815 A CN101825815 A CN 101825815A
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- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000004973 liquid crystal related substance Substances 0.000 title description 7
- 239000011159 matrix material Substances 0.000 claims abstract description 117
- 238000002161 passivation Methods 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 139
- 239000010408 film Substances 0.000 claims description 90
- 238000005516 engineering process Methods 0.000 claims description 80
- 239000000203 mixture Substances 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 61
- 238000009413 insulation Methods 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 30
- 230000008021 deposition Effects 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- 239000007769 metal material Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 45
- 238000000151 deposition Methods 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 12
- 238000001755 magnetron sputter deposition Methods 0.000 description 12
- 238000002207 thermal evaporation Methods 0.000 description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- 239000012528 membrane Substances 0.000 description 7
- 230000002950 deficient Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910079289 CN101825815B (zh) | 2009-03-06 | 2009-03-06 | Tft-lcd阵列基板及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910079289 CN101825815B (zh) | 2009-03-06 | 2009-03-06 | Tft-lcd阵列基板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101825815A true CN101825815A (zh) | 2010-09-08 |
CN101825815B CN101825815B (zh) | 2013-02-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 200910079289 Expired - Fee Related CN101825815B (zh) | 2009-03-06 | 2009-03-06 | Tft-lcd阵列基板及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN101825815B (zh) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629575A (zh) * | 2011-08-23 | 2012-08-08 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法 |
CN102629608A (zh) * | 2012-03-31 | 2012-08-08 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法和显示装置 |
CN102981329A (zh) * | 2011-09-06 | 2013-03-20 | 乐金显示有限公司 | 显示装置 |
CN103474432A (zh) * | 2013-08-28 | 2013-12-25 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制备方法和显示装置 |
WO2014127579A1 (zh) * | 2013-02-19 | 2014-08-28 | 合肥京东方光电科技有限公司 | 薄膜晶体管阵列基板、制造方法及显示装置 |
CN104483776A (zh) * | 2014-12-30 | 2015-04-01 | 京东方科技集团股份有限公司 | 一种彩膜基板及其制备方法、显示装置 |
CN105428243A (zh) * | 2016-01-11 | 2016-03-23 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及制作方法、阵列基板和显示装置 |
CN106125432A (zh) * | 2016-08-29 | 2016-11-16 | 武汉华星光电技术有限公司 | 显示器及其显示面板 |
WO2017059680A1 (zh) * | 2015-10-09 | 2017-04-13 | 小米科技有限责任公司 | 液晶显示组件及电子设备 |
CN107290904A (zh) * | 2016-04-04 | 2017-10-24 | 三星显示有限公司 | 显示装置 |
CN107910351A (zh) * | 2017-11-14 | 2018-04-13 | 深圳市华星光电技术有限公司 | Tft基板的制作方法 |
CN108089367A (zh) * | 2018-01-03 | 2018-05-29 | 京东方科技集团股份有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
CN110376811A (zh) * | 2019-06-11 | 2019-10-25 | 惠科股份有限公司 | 阵列基板和显示装置 |
CN114063332A (zh) * | 2020-07-31 | 2022-02-18 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
-
2009
- 2009-03-06 CN CN 200910079289 patent/CN101825815B/zh not_active Expired - Fee Related
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629575B (zh) * | 2011-08-23 | 2014-09-24 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法 |
CN102629575A (zh) * | 2011-08-23 | 2012-08-08 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法 |
US9070772B2 (en) | 2011-08-23 | 2015-06-30 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method thereof |
US9436051B2 (en) | 2011-09-06 | 2016-09-06 | Lg Display Co., Ltd. | Display device |
CN102981329A (zh) * | 2011-09-06 | 2013-03-20 | 乐金显示有限公司 | 显示装置 |
WO2013143321A1 (zh) * | 2012-03-31 | 2013-10-03 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
CN102629608A (zh) * | 2012-03-31 | 2012-08-08 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法和显示装置 |
WO2014127579A1 (zh) * | 2013-02-19 | 2014-08-28 | 合肥京东方光电科技有限公司 | 薄膜晶体管阵列基板、制造方法及显示装置 |
CN103474432A (zh) * | 2013-08-28 | 2013-12-25 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制备方法和显示装置 |
CN103474432B (zh) * | 2013-08-28 | 2016-01-06 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制备方法和显示装置 |
CN104483776A (zh) * | 2014-12-30 | 2015-04-01 | 京东方科技集团股份有限公司 | 一种彩膜基板及其制备方法、显示装置 |
US10564333B2 (en) | 2014-12-30 | 2020-02-18 | Boe Technology Group Co., Ltd. | Color filter substrate, manufacturing method thereof, and display device |
WO2016107312A1 (zh) * | 2014-12-30 | 2016-07-07 | 京东方科技集团股份有限公司 | 彩膜基板及其制备方法、显示装置 |
CN104483776B (zh) * | 2014-12-30 | 2017-10-17 | 京东方科技集团股份有限公司 | 一种彩膜基板及其制备方法、显示装置 |
WO2017059680A1 (zh) * | 2015-10-09 | 2017-04-13 | 小米科技有限责任公司 | 液晶显示组件及电子设备 |
US10495911B2 (en) | 2015-10-09 | 2019-12-03 | Xiaomi Inc. | Liquid crystal display assembly and electronic device |
CN105428243A (zh) * | 2016-01-11 | 2016-03-23 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及制作方法、阵列基板和显示装置 |
US10355022B2 (en) | 2016-01-11 | 2019-07-16 | Boe Technology Group Co., Ltd. | Thin film transistor, method for fabricating the same, array substrate, and display device |
CN107290904A (zh) * | 2016-04-04 | 2017-10-24 | 三星显示有限公司 | 显示装置 |
CN107290904B (zh) * | 2016-04-04 | 2022-02-08 | 三星显示有限公司 | 显示装置 |
WO2018040468A1 (zh) * | 2016-08-29 | 2018-03-08 | 武汉华星光电技术有限公司 | 显示器及其显示面板 |
US10216058B2 (en) | 2016-08-29 | 2019-02-26 | Wuhan China Star Optoelectronics Technology Co., Ltd | Display devices and the display panels thereof |
CN106125432A (zh) * | 2016-08-29 | 2016-11-16 | 武汉华星光电技术有限公司 | 显示器及其显示面板 |
CN107910351A (zh) * | 2017-11-14 | 2018-04-13 | 深圳市华星光电技术有限公司 | Tft基板的制作方法 |
CN107910351B (zh) * | 2017-11-14 | 2020-06-05 | 深圳市华星光电技术有限公司 | Tft基板的制作方法 |
CN108089367A (zh) * | 2018-01-03 | 2018-05-29 | 京东方科技集团股份有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
CN110376811A (zh) * | 2019-06-11 | 2019-10-25 | 惠科股份有限公司 | 阵列基板和显示装置 |
CN114063332A (zh) * | 2020-07-31 | 2022-02-18 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
US11796876B2 (en) | 2020-07-31 | 2023-10-24 | Beijing Boe Display Technology Co., Ltd. | Array substrate and display apparatus |
Also Published As
Publication number | Publication date |
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CN101825815B (zh) | 2013-02-13 |
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SE01 | Entry into force of request for substantive examination | ||
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ASS | Succession or assignment of patent right |
Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150706 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150706 |
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Effective date of registration: 20150706 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20130213 Termination date: 20210306 |