Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/005—Control means for lapping machines or devices
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/005—Control means for lapping machines or devices
  • B24B37/013—Devices or means for detecting lapping completion
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/27—Work carriers
  • B24B37/30—Work carriers for single side lapping of plane surfaces
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B41/00—Component parts such as frames, beds, carriages, headstocks
  • B24B41/06—Work supports, e.g. adjustable steadies
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B47/00—Drives or gearings; Equipment therefor
  • B24B47/22—Equipment for exact control of the position of the grinding tool or work at the start of the grinding operation
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
  • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
  • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

• the present application relates to a substrate polishing method, a program, and a substrate polishing apparatus.
• CMP chemical mechanical polishing
• an elastic membrane (membrane) is fixed to a chucking plate, and a pressure chamber (pressure chamber) formed on the top of the chucking plate and the pressure generated by the elastic membrane (membrane) are used.
• a so-called floating type top ring is widely used, which presses a semiconductor wafer against a polishing pad by fluid pressure via an elastic membrane by supplying a fluid such as air into a chamber.
• a substrate holding device one is known that includes a vertical movement mechanism that vertically moves a carrier (top ring main body) that supports a membrane. By adjusting the position of the top ring body relative to the polishing table using the vertical movement mechanism, and then adjusting the pressure within the membrane, polishing is performed to obtain a desired polishing profile.
• the dimensions of a semiconductor substrate are generally determined by standards (for example, SEMI standards).
• standards for example, SEMI standards.
• substrates such as the above-mentioned CCL substrates, PCB substrates, photomask substrates, and display panels often do not have dimensional standards, and substrates with various dimensions may exist.
• the positional relationship between the substrate and the polishing table changes if the dimensions of the substrate differ.
• the positional relationship between the polishing surface of the polishing table and the surface to be polished of the substrate changes, which may adversely affect the control of the substrate holding device or the polishing profile.
• one purpose of the present application is to propose a substrate polishing method, program, or substrate polishing apparatus for polishing substrates of various sizes.
• a polishing table having a polishing surface, a top ring for holding a substrate and pressing it against the polishing surface, a vertical movement mechanism for vertically moving the top ring, and information regarding the thickness of the substrate.
• a substrate polishing method using a polishing apparatus in which the top ring includes a membrane that is an elastic membrane forming a pressure chamber to which pressure fluid is supplied, and a top ring that holds the membrane. and a main body configured to press the substrate against the polishing surface by supplying pressure fluid to the pressure chamber, and the substrate polishing method includes acquiring information regarding the thickness of the substrate using the sensor.
• a program for causing a processing device of a polishing apparatus to perform a control process of performing a polishing process on a processing surface of a substrate, and the polishing apparatus includes a polishing table having a polishing surface; , a top ring for holding the substrate and pressing it against the polishing surface, a vertical movement mechanism for moving the top ring up and down, and a sensor for acquiring information regarding the thickness of the substrate, the top ring , has a membrane that is an elastic film forming a pressure chamber to which pressurized fluid is supplied, and a top ring body that holds the membrane, and presses the substrate against the polishing surface by supplying the pressurized fluid to the pressure chamber.
• the control processing includes an acquisition step of acquiring information regarding the thickness of the substrate using the sensor, and determining a height position of the top ring with respect to the polishing table based on the acquired information regarding the thickness of the substrate. and a polishing step of polishing the substrate by supplying pressure fluid to the pressure chamber and pressing the substrate against the polishing surface.
• a substrate polishing apparatus which includes a polishing table having a polishing surface, a top ring for holding and pressing a substrate against the polishing surface, and comprising: It has a membrane that is an elastic film forming a pressure chamber to which pressure fluid is supplied, and a top ring body that holds the membrane, and by supplying the pressure fluid to the pressure chamber, the substrate is placed on the polishing surface.
• a top ring configured to press, a vertical movement mechanism that moves the top ring up and down, a sensor for acquiring information regarding the thickness of the substrate, and based on the information regarding the thickness of the substrate acquired by the sensor.
• a control device configured to polish the substrate by adjusting the height position of the top ring with respect to the polishing table and pressing the substrate against the polishing surface by supplying pressure fluid to the pressure chamber; , is provided.
• FIG. 1 is a plan view showing the overall configuration of a substrate polishing apparatus according to an embodiment.
• FIG. 2 is a side view schematically showing a load unit according to an embodiment.
• FIG. 3 is a perspective view showing a transport mechanism in a load unit according to an embodiment.
• FIG. 2 is a side view schematically showing a transport unit according to an embodiment.
• FIG. 2 is a perspective view of a pusher according to one embodiment.
• 6 is a partial cross-sectional view of the pusher shown in FIG. 5, looking in the direction of arrow 6; FIG. It is a partial sectional view showing when the first stage and the second stage are in the upper position.
• FIG. 1 is a plan view showing the overall configuration of a substrate polishing apparatus according to an embodiment.
• FIG. 2 is a side view schematically showing a load unit according to an embodiment.
• FIG. 3 is a perspective view showing a transport mechanism in a load unit according to an embodiment.
• FIG. 2 is a side view schematically showing
• FIG. 3 is a partial cross-sectional view showing the first stage and the second stage in an upper position, and the second stage in a raised position with respect to the first stage.
• 1 is a perspective view schematically showing a polishing unit according to an embodiment.
• FIG. FIG. 2 is a cross-sectional view showing an example of a top ring that constitutes a polishing head that holds a substrate and presses it against a polishing surface on a polishing table.
• 1 is a flowchart illustrating a substrate polishing method according to one embodiment.
• FIG. 3 is a cross-sectional view of a top ring and polishing pad when the substrate thickness is relatively small, according to one embodiment.
• FIG. 3 is a cross-sectional view of a top ring and polishing pad when the substrate thickness is relatively large, according to one embodiment.
• FIG. 1 is a plan view showing the overall configuration of a substrate polishing apparatus 1000 according to one embodiment.
• a substrate polishing apparatus 1000 shown in FIG. 1 includes a loading unit 100, a transport unit 200, a polishing unit 300, a drying unit 500, and an unloading unit 600.
• the transport unit 200 has two transport units 200A, 200B
• the polishing unit 300 has two polishing units 300A, 300B. Note that one or more of the transport unit 200 and the polishing unit 300 may be provided.
• each of these units can be formed independently. By forming these units independently, the substrate polishing apparatus 1000 with different configurations can be easily formed by arbitrarily combining the number of each unit.
• the substrate polishing apparatus 1000 includes a control device 900, and each component of the substrate polishing device 1000 is controlled by the control device 900.
• the control device 900 can be configured from a general computer including an input/output device, an arithmetic device, a storage device (storage medium) 900a, and the like.
• the control device 900 functions as a main body of operations that control the substrate polishing apparatus 1000.
• the control device 900 performs various processes by reading and executing programs stored in the storage device 900a or the like.
• the program may be obtained from a recording medium such as a DVD-ROM, or may be obtained via a network.
• the load unit 100 is a unit for introducing the substrate WF into the substrate polishing apparatus 1000 before being subjected to processing such as polishing and cleaning.
• FIG. 2 is a side view schematically showing the load unit 100 according to one embodiment.
• load unit 100 includes a housing 102 .
• the housing 102 includes an entrance opening 104 on the side that receives the substrate WF.
• the right side is the inlet side.
• the load unit 100 receives a substrate WF to be processed through an inlet opening 104 .
• a processing device is arranged to perform a processing step before processing the substrate WF by the substrate polishing device 1000 according to the present disclosure.
• load unit 100 includes an ID reader 106.
• ID reader 106 reads the ID of a substrate received through entry aperture 104 .
• the substrate polishing apparatus 1000 performs various processes on the substrate WF according to the read ID.
• ID reader 106 may not be present.
• the load unit 100 is configured to comply with the Surface Mount Equipment Manufacturers Association (SMEMA) mechanical equipment interface standard (IPC-SMEMA-9851).
• SMEMA Surface Mount Equipment Manufacturers Association
• the load unit 100 includes a plurality of transport rollers 202 for transporting the substrate WF. By rotating the transport roller 202, the substrate WF on the transport roller 202 can be transported in a predetermined direction (to the left in FIG. 2).
• the housing 102 of the load unit 100 has an exit opening 108 for the substrate WF.
• the load unit 100 includes a sensor 112 for detecting the presence or absence of the substrate WF at a predetermined position on the transport roller 202.
• Sensor 112 can be any type of sensor, for example an optical sensor. In the embodiment shown in FIG. 2, two sensors 112 are provided within the housing 102, one sensor 112a located near the inlet opening 104 and one sensor 112a located near the exit opening 108.
• the operation of the load unit 100 can be controlled in response to the detection of the substrate WF by these sensors 112. For example, when the sensor 112a near the entrance opening 104 detects the presence of the substrate WF, the rotation of the transport roller 202 in the load unit 100 may be started, or the rotation speed of the transport roller 202 may be changed. Good too. Furthermore, when the sensor 112b near the exit opening 108 detects the presence of the substrate WF, the entrance shutter 218 of the subsequent unit, the transport unit 200A, may be opened. Further, in one embodiment, the load unit 100 includes a sensor 260 for detecting the thickness of the substrate WF conveyed by the conveyance roller 202.
• Sensor 260 may be any type of sensor, such as an optical ranging sensor. Note that the sensor 260 is not limited to being provided in the load unit 100, but instead of or in addition to this, it may be provided in the transport unit 200 to detect the thickness of the substrate WF on the transport roller 202 of the transport unit 200. It may also be something to do.
• FIG. 3 is a perspective view showing the transport mechanism in the load unit 100 according to one embodiment.
• the transport mechanism of the load unit 100 includes a plurality of transport rollers 202 and a plurality of roller shafts 204 to which the transport rollers 202 are attached.
• three transport rollers 202 are attached to each roller shaft 204.
• the substrate WF is placed on a conveyance roller 202, and the substrate WF is conveyed as the conveyance roller 202 rotates.
• the mounting position of the transport roller 202 on the roller shaft 204 can be any position as long as the substrate WF can be stably transported.
• the transport roller 202 contacts the substrate WF, it should be arranged so that the transport roller 202 contacts an area where there is no problem even if it contacts the substrate WF to be processed.
• the transport rollers 202 of the load unit 100 can be constructed from a conductive polymer.
• transport roller 202 is electrically grounded, such as via roller shaft 204. This is to prevent the substrate WF from being charged and damaging the substrate WF.
• the load unit 100 may be provided with an ionizer (not shown) to prevent the substrate WF from being charged.
• the sensor 260 for detecting the thickness of the substrate WF is arranged to detect the center (the center in the direction perpendicular to the transport direction) of the substrate WF transported by the transport roller 202 or the vicinity thereof. be done.
• the sensor 260 is not limited to detecting the center of the substrate WF, and may detect any location.
• the sensor 260 may be provided with a plurality of sensors so as to detect a plurality of locations in a direction perpendicular to the transport direction, or may be provided with a drive mechanism that moves the sensor in a direction perpendicular to the transport direction. It may also be something that can be done.
• the roller shaft 204 is rotationally driven by a motor 208 via a gear 206.
• motor 208 may be a servo motor.
• gear 206 can be a magnetic gear. Magnetic gears are non-contact power transmission mechanisms, so unlike contact gears, they do not generate particulates due to wear and do not require maintenance such as oiling.
• the load unit 100 is provided with an auxiliary roller 214 near the entrance opening 104 and the exit opening 108.
• the auxiliary roller 214 is arranged at approximately the same height as the conveyance roller 202. The position of the auxiliary roller 214 can be changed depending on the dimensions of the substrate WF to be transported.
• the auxiliary roller 214 supports the substrate WF so that it does not fall between the unit and another unit.
• the auxiliary roller 214 is not connected to a power source and is configured to be freely rotatable.
• the load unit 100 may include an inverter (not shown) for inverting the received substrate WF.
• an inverter (not shown) for inverting the received substrate WF.
• the substrate WF is transported to the load unit 100 so that the surface on which the pattern area is formed is the top surface according to the specifications of the upstream processing device, the substrate WF is reversed by a reversing machine and the substrate WF is The surface on which the pattern area is formed may be the bottom surface, and then the subsequent processing of the substrate polishing apparatus 1000 may be performed.
• FIG. 4 is a side view schematically showing the transport unit 200 according to one embodiment.
• a substrate polishing apparatus 1000 shown in FIG. 1 includes two transport units 200A and 200B. Since the two transport units 200A and 200B can have the same configuration, they will be collectively referred to as the transport unit 200 below.
• the transport unit 200 includes a plurality of transport rollers 202 for transporting the substrate WF. By rotating the transport roller 202, the substrate WF on the transport roller 202 can be transported in a predetermined direction.
• the transport roller 202 of the transport unit 200 may be formed from a conductive polymer or a non-conductive polymer.
• the conveyance roller 202 is attached to a roller shaft 204 (not shown in FIG.
• the illustrated transport unit 200 includes guide rollers 212 (not shown in FIG. 4) that support the side surfaces of the substrate WF being transported.
• the illustrated transport unit 200 includes a sensor 216 for detecting the presence or absence of the substrate WF at a predetermined position on the transport roller 202.
• Sensor 216 may be any type of sensor, such as an optical sensor. In the embodiment shown in FIG. 4, seven sensors 216 (216a to 216g) are provided in the transport unit 200.
• the operation of the transport unit 200 can be controlled in response to the detection of the substrate WF by these sensors 216a-216g.
• the transport unit 200 has an entrance shutter 218 that can be opened and closed to receive the substrate WF into the transport unit 200.
• the transport unit 200 includes a support member (not shown in FIG. 4) that prevents the substrate WF from slipping into the gap between the transport rollers 202 adjacent to each other in the transport direction.
• a plurality of guide rollers 212 (not shown in FIG. 4) for supporting the substrate WF to be transported are also arranged on both sides in the width direction of the substrate WF.
• the transport unit 200 has a stopper 220.
• the stopper 220 is connected to a stopper moving mechanism 222, and the stopper 220 can enter into the transport path of the substrate WF moving on the transport rollers 202.
• the stopper 220 is located within the transport path of the substrate WF, the side surface of the substrate WF moving on the transport roller 202 contacts the stopper 220, and the moving substrate WF can be stopped at the position of the stopper 220. can.
• the stopper 220 is in a position retracted from the transport path of the substrate WF, the substrate WF can move on the transport roller 202.
• the stop position of the substrate WF by the stopper 220 is a position (substrate transfer position) where a pusher 230, which will be described later, can receive the substrate WF on the transport roller 202.
• the transport unit 200 has a pusher 230.
• the pusher 230 is configured to be able to lift the substrate WF placed on the plurality of transport rollers 202 away from the plurality of transport rollers 202 . Further, the pusher 230 is configured to be able to transfer the substrate WF held thereto to the transport roller 202 of the transport unit 200.
• FIG. 5 is a perspective view of a pusher 230 according to one embodiment.
• FIG. 6 is a partial cross-sectional view of the pusher 230 shown in FIG. 5, looking in the direction of arrow 6.
• FIG. 6 schematically shows, together with the pusher 230, the transport roller 202, the substrate WF disposed on the transport roller 202 at a substrate transfer position, and the top ring 302 that receives the substrate WF.
• pusher 230 includes a first stage 232 and a second stage 270.
• FIGS. 5 pusher 230 includes a first stage 232 and a second stage 270.
• the first stage 232 is a stage for supporting the retainer member 3 of the top ring 302 when transferring the substrate WF from the pusher 230 to the top ring 302, which will be described later.
• the first stage 232 includes a plurality of support columns 234 .
• the end of the support column 234 includes a flat support surface 234a for supporting the retainer member 3 of the top ring 302, and an inclined surface 234b for guiding the top ring 302.
• the support columns 234 at four corners of the plurality of support columns 234 may include a support surface 234a and an inclined surface 234b.
• the retainer member 3 can be aligned in the recesses formed by the support columns 234 at the four corners.
• the support columns 234 other than the four corners may include only the support surfaces 234a.
• the other end of each support column 234 is connected to a common base 236. Further, each support column 234 is provided at a position that does not interfere with the conveyance roller 202, and in the embodiment shown in FIG. 5, each support column 234 is arranged between the conveyance rollers 202.
• the second stage 270 is configured to receive the substrate WF on the transport roller 202.
• the second stage 270 includes a plurality of support columns 272 .
• the end of the support column 272 includes a flat support surface that supports the substrate WF.
• the other end of each support column 272 is connected to a common base 274.
• each support column 272 is provided at a position that does not interfere with the conveyance roller 202, and in the embodiment shown in FIG. 6, each support column 272 is arranged between the conveyance rollers 202.
• the first stage 232 and the second stage 270 are each connected to a lifting mechanism and are each movable in the height direction (z direction), as will be described in detail below.
• the first stage 232 is configured to be movable in the height direction (z direction).
• the pusher 230 has a first lifting mechanism 231.
• the first elevating mechanism 231 of the pusher 230 is a pneumatic elevating mechanism and includes a cylinder 240 and a piston 242. An end of the piston 242 is connected to a movable base 244. Cylinder 240 is connected to fixed pedestal 246.
• the fixed pedestal 246 is fixed to the casing 201 that covers the entire transport unit 200 or the floor surface on which the transport unit 200 is installed. By adjusting the air pressure inside the cylinder 240, the piston 242 moves, and the movable base 244 can be moved in the height direction (z direction).
• an XY stage 248 is mounted on the movable base 244 and is capable of moving the first stage 232 and the second stage 270 in a horizontal plane.
• the XY stage 248 can be a known XY stage configured to be movable in two orthogonal directions using a linear guide or the like.
• a rotation stage 250 is mounted above the XY stage 248. Rotation stage 250 is configured to be rotatable in the XY plane (horizontal plane). In other words, the rotation stage 250 is configured to be rotatable around the z-axis.
• a known rotation stage 250 including a rotation bearing or the like can be adopted.
• a second elevating mechanism 233 is mounted on the rotation stage 250.
• the second lifting mechanism 233 has a cylinder 252 and a piston 254.
• a base 236 of the first stage 232 is connected to the cylinder 252 .
• a movable piston 254 is connected to the cylinder 252, and the piston 254 can be moved by adjusting the air pressure within the cylinder 252.
• a base 274 of a second stage 270 is connected to an end of the piston 254. Therefore, by adjusting the air pressure within the cylinder 252, the piston 254 and the second stage 270 can be moved in the height direction (z direction).
• the first elevating mechanism 231 moves both the first stage 232 and the second stage 270 in the height direction (z direction), and the second elevating mechanism 233 moves the second stage 270 can be moved in the height direction (z direction) with respect to the first stage 232.
• the first stage 232 and the second stage 270 are movable in two orthogonal directions (xy directions) within a horizontal plane by an XY stage 248.
• the first stage 232 and the second stage 270 are rotatable in a horizontal plane (centered on the z-axis) by the rotation stage 250.
• the pusher 230 and the top ring 302 can be aligned.
• the first elevating mechanism 231 and the second elevating mechanism 233 are pneumatic elevating mechanisms, but these elevating mechanisms may be hydraulic, or electric powered using a motor, ball screw, etc. It is also possible to use a type lifting mechanism.
• the first elevating mechanism 231 allows the first stage 232 and the second stage 270 to move between the lower position and the upper position.
• FIG. 6 shows the first stage 232 and the second stage 270 in the lower position.
• the ends of the support columns 234 of the first stage 232 and the ends of the support columns 272 of the second stage 270 are It is located at a lower position than the surface of the roller 202 that supports the substrate WF.
• FIG. 7 shows the first stage 232 and the second stage 270 in the upper position.
• FIG. 8 shows a state in which the first stage 232 and the second stage 270 are in the upper position, and the second stage 270 is in a raised position relative to the first stage 232.
• the transport unit 200 includes a sensor 262 for detecting the thickness of the substrate WF transferred from the pusher 230 to the top ring 302 (see FIGS. 4 and 6 to 8).
• the sensor 262 can be any type of sensor, for example an optical distance measuring sensor.
• Information acquired by sensor 262 is sent to control device 900.
• the sensor 262 is an image sensor attached to the housing 201, and the photographing direction is directed in the horizontal direction.
• the control device 900 determines the amount of movement of the second stage 270 holding the substrate WF relative to the first stage 232 when the substrate WF is transferred from the pusher 230 to the top ring 302. Calculate Dh.
• the control device 900 is configured to detect the thickness of the substrate WF based on the calculated movement amount Dh.
• the sensor 262 is not limited to these examples, and may include a laser type sensor, a potentiometer, an overcurrent type sensor, an acceleration sensor, a linear scale type sensor, etc. for detecting the movement amount Dh of the second stage 270 with respect to the first stage 232.
• various known sensors can be employed.
• the sensor 262 may be mounted on the pusher 230 instead of or in addition to being attached to the housing 201.
• a plurality of sensors 262 may be provided.
• the transport unit 200 shown in FIG. 4 has a cleaning section. As shown in FIG. 4, the cleaning section has a cleaning nozzle 284.
• the cleaning nozzle 284 includes an upper cleaning nozzle 284a arranged above the conveyance roller 202 and a lower cleaning nozzle 284b arranged below.
• the upper cleaning nozzle 284a and the lower cleaning nozzle 284b are connected to a cleaning liquid supply source (not shown).
• the upper cleaning nozzle 284a is configured to supply cleaning liquid to the upper surface of the substrate WF being conveyed on the conveying roller 202.
• the lower cleaning nozzle 284b is configured to supply cleaning liquid to the lower surface of the substrate WF being conveyed on the conveying roller 202.
• the upper cleaning nozzle 284a and the lower cleaning nozzle 284b have a width approximately equal to or larger than the width of the substrate WF conveyed on the conveyance roller 202, and as the substrate WF is conveyed on the conveyance roller 202, the substrate WF is conveyed on the conveyance roller 202.
• the entire surface of the WF is configured to be cleaned.
• the cleaning section is located downstream of the substrate delivery location of the pusher 230 of the transport unit 200.
• a press roller 290 is placed above the conveyance roller 202.
• the sensor 216d is arranged near the entrance of the cleaning section.
• a cleaning liquid can be ejected from the cleaning nozzle 284 to begin cleaning the substrate WF.
• the rotation speed of the transport roller 202 may be set to a cleaning speed.
• sensor 216f is located near the washer exit point.
• the spraying of the cleaning liquid from the cleaning nozzle 284 may end once the substrate WF is detected by the sensor 216f.
• the substrate WF is conveyed while being sandwiched between the conveyance roller 202 and the holding roller 290, so that the substrate WF can be stably conveyed even while the cleaning liquid is being sprayed.
• the transport unit 200 has an exit shutter 286 that can be opened and closed.
• the transport unit 200 also includes a sensor 216g near the exit.
• the exit shutter 286 may be opened to transport the substrate WF to the next unit.
• the conveyance of the substrate WF by the conveyance roller 202 is stopped without opening the exit shutter 286, the process of the next unit is waited, and the next unit is ready to receive the substrate.
• the exit shutter 286 may be opened and the substrate WF may be transported to the next unit.
• FIG. 9 is a perspective view schematically illustrating a polishing unit 300, according to one embodiment.
• a substrate polishing apparatus 1000 shown in FIG. 1 includes two polishing units 300A and 300B. Since the two polishing units 300A and 300B can have the same configuration, they will be collectively referred to as the polishing unit 300 below.
• the polishing unit 300 includes a polishing table 350 and a top ring 302 constituting a polishing head that holds a substrate, which is an object to be polished, and presses it against a polishing surface on the polishing table 350.
• the polishing table 350 is connected via a table shaft 351 to a polishing table rotation motor (not shown) disposed below, and is rotatable around the table shaft 351.
• a polishing pad 352 is attached to the upper surface of the polishing table 350, and a surface 352a of the polishing pad 352 constitutes a polishing surface for polishing the substrate.
• a polishing liquid supply nozzle 354 is installed above the polishing table 350, and the polishing liquid is supplied onto the polishing pad 352 on the polishing table 350 by this polishing liquid supply nozzle 354. Further, as shown in FIG. 9, the polishing table 350 and the table shaft 351 are provided with a passage 353 for supplying polishing liquid. Passage 353 communicates with an opening 355 in the surface of polishing table 350. A through hole 357 is formed in the polishing pad 352 at a position corresponding to the opening 355 of the polishing table 350, and the polishing liquid passing through the passage 353 is removed from the opening 355 of the polishing table 350 and the through hole 357 of the polishing pad 352. It is supplied to the surface of pad 352. Note that the opening 355 of the polishing table 350 and the through hole 357 of the polishing pad 352 may be one or more, or may not be provided.
• the top ring 302 is connected to the top ring shaft 18, and the top ring shaft 18 is configured to move up and down with respect to the swing arm 360 by a vertical movement mechanism 319.
• the top ring shaft 18 is rotated by a top ring rotation motor (not shown).
• the rotation of the top ring shaft 18 causes the top ring 302 to rotate around the top ring shaft 18.
• a rotary joint 323 is attached to the upper end of the top ring shaft 18.
• the top ring 302 is capable of holding a substrate on its lower surface.
• the swing arm 360 is configured to be able to pivot around a support shaft 362.
• the top ring 302 is movable between the above-described substrate transfer position of the transport unit 200 and above the polishing table 350 by swinging the swing arm 360.
• the top ring shaft 18 By lowering the top ring shaft 18, the top ring 302 can be lowered and the substrate can be pressed against the surface (polishing surface) 352a of the polishing pad 352.
• the top ring 302 and the polishing table 350 are rotated, and the polishing liquid supply nozzle 354 provided above the polishing table 350 and/or the opening 355 provided in the polishing table 350 are supplied onto the polishing pad 352. Supply polishing liquid to.
• the surface of the substrate can be polished by pressing the substrate against the polishing surface 352a of the polishing pad 352.
• the vertical movement mechanism 319 that moves the top ring shaft 18 and the top ring 302 up and down includes a bridge 28 that rotatably supports the top ring shaft 18 via a bearing 321, a ball screw 32 attached to the bridge 28, and a support column 130.
• the AC servo motor 38 is provided on the support stand 29 and on the support stand 29.
• a support base 29 that supports the servo motor 38 is fixed to a swing arm 360 via a column 130.
• the ball screw 32 includes a screw shaft 32a connected to a servo motor 38, and a nut 32b into which the screw shaft 32a is screwed.
• the top ring shaft 18 is configured to move up and down integrally with the bridge 28. Therefore, when the servo motor 38 is driven, the bridge 28 moves up and down via the ball screw 32, which causes the top ring shaft 18 and the top ring 302 to move up and down.
• the polishing unit 300 includes a distance measuring sensor 70 as a position detection section that detects the distance to the lower surface of the bridge 28, that is, the position of the bridge 28. By detecting the position of the bridge 28 using the distance measuring sensor 70, the position of the top ring 302 can be detected.
• the distance measuring sensor 70 constitutes a vertical movement mechanism 319 together with the ball screw 32 and the servo motor 38.
• the distance measuring sensor 70 may be a laser type sensor, an ultrasonic sensor, an overcurrent type sensor, or a linear scale type sensor.
• each device within the polishing unit, including the distance measurement sensor 70 and the servo motor 38, is configured to be controlled by a control device 900.
• the polishing unit 300 includes a dressing unit 356 that dresses the polishing surface 352a of the polishing pad 352.
• This dressing unit 356 includes a dresser 50 that slides on the polishing surface 352a, a dresser shaft 51 to which the dresser 50 is connected, an air cylinder 53 provided at the upper end of the dresser shaft 51, and a dresser shaft 51 that freely rotates.
• a supporting swing arm 55 is provided.
• the lower part of the dresser 50 is constituted by a dressing member 50a, and needle-shaped diamond particles are attached to the lower surface of the dressing member 50a.
• the air cylinder 53 is placed on a support stand 57 supported by struts 56, and these struts 56 are fixed to the swing arm 55.
• the swing arm 55 is driven by a motor (not shown) and is configured to swing around a support shaft 58.
• the dresser shaft 51 is rotated by the drive of a motor (not shown), and the rotation of the dresser shaft 51 causes the dresser 50 to rotate around the dresser shaft 51.
• the air cylinder 53 moves the dresser 50 up and down via the dresser shaft 51, and presses the dresser 50 against the polishing surface 352a of the polishing pad 352 with a predetermined pressing force.
• Dressing of the polishing surface 352a of the polishing pad 352 is performed as follows.
• the dresser 50 is pressed against the polishing surface 352a by the air cylinder 53, and at the same time, pure water is supplied to the polishing surface 352a from a pure water supply nozzle (not shown).
• the dresser 50 is rotated around the dresser shaft 51 and the swinging arm 55 is swung on the polishing surface 352a to bring the lower surface (diamond particles) of the dressing member 50a into sliding contact with the rotating polishing surface 352a. In this way, the polishing pad 352 is scraped off by the dresser 50, and the polishing surface 352a is dressed.
• the wear amount of the polishing pad 352 is measured using this dresser 50.
• the dressing unit 356 includes a displacement sensor 60 that measures the displacement of the dresser 50.
• This displacement sensor 60 constitutes a wear amount detection means for detecting the amount of wear on the polishing pad 352, and is provided on the upper surface of the swing arm 55.
• a target plate 61 is fixed to the dresser shaft 51, and as the dresser 50 moves up and down, the target plate 61 moves up and down.
• the displacement sensor 60 is arranged to pass through the target plate 61, and measures the displacement of the dresser 50 by measuring the displacement of the target plate 61.
• any type of sensor can be used, such as a linear scale, a laser sensor, an ultrasonic sensor, or an eddy current sensor.
• the amount of wear on the polishing pad 352 is measured as follows. First, the air cylinder 53 is driven to bring the dresser 50 into contact with the polishing surface 352a of the polishing pad 352 that has been initially dressed. In this state, the displacement sensor 60 detects the initial position (initial height value) of the dresser 50 and stores the initial position (initial height value) in the control device 900. After the polishing process for one or more substrates is completed, the dresser 50 is brought into contact with the polishing surface 352a again, and the position of the dresser 50 is measured in this state.
• the control device 900 determines the amount of wear on the polishing pad 352 by determining the difference between the initial position and the position of the dresser 50 after polishing. can be found. In this way, the amount of wear on polishing pad 352 is determined based on the position of dresser 50.
• FIG. 10 is a schematic cross-sectional view of a top ring 302 that holds a substrate to be polished and presses the substrate against a polishing surface on a polishing pad, according to one embodiment.
• FIG. 10 only the main components constituting the top ring 302 are schematically illustrated.
• the top ring 302 includes a top ring body 2 that presses the substrate WF against the polishing surface 352a, and a retainer member 3 that directly presses the polishing surface 352a.
• the top ring body 2 is made of a generally rectangular flat plate-like member, and the retainer member 3 is attached to the outer periphery of the top ring body 2.
• the top ring body 2 is made of resin such as engineering plastic (for example, PEEK).
• An elastic membrane 4 is attached to the bottom surface of the top ring body 2 and comes into contact with the back surface of the substrate.
• the elastic membrane 4 is formed of a rubber material with excellent strength and durability, such as ethylene propylene rubber (EPDM), polyurethane rubber, or silicone rubber.
• the elastic membrane 4 can be formed from a rubber material using a mold.
• the elastic membrane 4 has a plurality of concentric partition walls 4a, and these partition walls 4a form a circular center chamber 5 between the upper surface of the elastic membrane 4 and the lower surface of the top ring main body 2.
• a square annular ripple chamber 6 surrounding the ripple chamber 6, a square annular intermediate chamber 7 surrounding the ripple chamber 6, a square annular outer chamber 8 surrounding the intermediate chamber 7, and a square annular edge chamber 9 surrounding the outer chamber 8 are formed.
• a center chamber 5 is formed in the center of the top ring body 2, and a ripple chamber 6, an intermediate chamber 7, an outer chamber 8, and an edge chamber 9 are formed concentrically in order from the center toward the outer circumference. There is.
• a plurality of vacuum suction holes are formed in the elastic membrane 4 to communicate with the ripple chamber 6 and to vacuum suction the substrate WF onto the top ring 302 .
• the vacuum suction hole is connected to a vacuum source (not shown), and the substrate WF can be vacuum suctioned to the elastic film 4 of the top ring 302 via the vacuum suction hole.
• a retainer member pressurizing chamber 10 made of an elastic membrane is also formed above the retainer member 3.
• the center chamber 5, the ripple chamber 6, the intermediate chamber 7, the outer chamber 8, the edge chamber 9, and the retainer member pressurizing chamber 10 are connected to a pressure adjustment section (not shown) via channels 11 to 16.
• the drying unit is a device for drying the substrate WF.
• the drying unit 500 dries the substrate WF that has been polished by the polishing unit 300 and then cleaned by the cleaning section of the transport unit 200.
• the drying unit 500 is arranged downstream of the transport unit 200.
• the drying unit 500 has a nozzle 530 for injecting gas toward the substrate WF being transported on the transport roller 202.
• the gas can be, for example, compressed air or nitrogen.
• the nozzle 530 includes a lower nozzle configured to eject gas from the lower side of the transport roller 202 to the lower surface of the substrate WF, and a lower nozzle configured to eject gas from the upper side of the transport roller 202 to the upper surface of the substrate WF. It may have the following configuration. Note that one lower nozzle and one upper nozzle may be provided, or a plurality of them may be provided in the transport direction of the substrate WF. Furthermore, each nozzle 530 may have a slit shape in which the gas supply port extends approximately to the width of the substrate WF.
• the unload unit 600 is a unit for transporting the substrate WF, which has been subjected to processing such as polishing and cleaning, out of the substrate polishing apparatus 1000.
• the unload unit 600 receives the substrate after being dried in the drying unit 500.
• the unloading unit 600 is located downstream of the drying unit 500.
• FIG. 11 is a flowchart illustrating a substrate polishing method according to one embodiment.
• This substrate polishing method is executed mainly by the control device 900 by reading a program stored in the storage device 900a or the like.
• This substrate polishing method is executed, for example, when the substrate WF is loaded into the load unit 100.
• the control device 900 first acquires information regarding the thickness of the substrate WF to be polished (step S12).
• the information regarding the thickness of the substrate WF may be, for example, the thickness of the substrate WF itself, or may be information indicating the thickness of the substrate WF.
• information regarding the thickness of the substrate WF may be referred to as "thickness information”.
• the thickness information of the substrate WF can be acquired using at least one of the acquisition steps described below.
• the control device 900 can acquire the thickness information of the substrate WF based on the detection signal input from the sensor 260 provided in the load unit 100 (or the transport unit 200) (see FIGS. 2 and 3). In this acquisition step, the thickness of the substrate WF on the transport roller 202 is acquired.
• the thickness information of the substrate WF may be acquired by the sensor 260 while the substrate WF is moved by the transport roller 202. Alternatively, the thickness information of the substrate WF may be acquired by the sensor 260 while the conveyance by the conveyance roller 202 is stopped.
• the sensor 260 may detect multiple locations on the substrate WF in the transport direction by the transport rollers 202. In such a case, the control device 900 may acquire the average value of a plurality of locations on the substrate WF as the thickness information.
• the control device 900 may acquire thickness information of the substrate WF when the substrate WF is transferred from the pusher 230 to the top ring 302.
• the control device 900 controls the distance that the pusher 230 moves to deliver the substrate WF to the top ring 302, for example, the amount of movement Dh of the second stage 270 relative to the first stage 232 (see FIG. 8). Based on this, thickness information of the substrate WF can be acquired.
• the control device 900 can acquire thickness information of the substrate WF based on a detection signal input from the sensor 262 provided in the transport unit 200 (see FIGS. 4 to 8).
• the control device 900 may acquire the thickness information of the substrate WF by bringing the polishing table 350 into contact with the top ring 302 holding the substrate WF to be polished.
• This acquisition step may be performed together with a pad search by the top ring 302, as an example.
• the pad search is a process of detecting the height (position) of the surface of the polishing pad 352.
• Pad search using the top ring is performed by detecting the height position of the top ring 302 when the bottom surface of the top ring 302 is brought into contact with the surface (polishing surface) of the polishing pad 352.
• the servo motor 38 is activated.
• the top ring 302 is lowered while driving and integrating the number of rotations using an encoder.
• the load on the servo motor 38 increases and the current flowing through the servo motor 38 increases. Therefore, the current flowing through the servo motor 38 is detected by the current detector of the control device 900, and when the current becomes large, it is determined that the lower surface of the top ring 302 has contacted the surface of the polishing pad 352.
• the control device 900 obtains the height of the surface of the polishing pad 352 from the integrated value of the encoder of the servo motor 38.
• the control device 900 may acquire the height of the surface of the polishing pad 352 as well as the thickness information of the substrate WF.
• the thickness information of the substrate WF may be obtained by detecting the distance between the substrate WF and the polishing pad 352 when the lower surface of the top ring 302 contacts the surface of the polishing pad 352.
• the thickness information of the substrate WF may be acquired by bringing the surface of the substrate WF into contact with the polishing pad 352. At this time, the amount of swelling of the partition wall 4a of the elastic membrane 4 (the amount of fluid supplied) may be taken into consideration.
• control device 900 may acquire thickness information of the substrate WF based on the difference between a reference (standard) height in a state in which the substrate WF is not held and a detected height in a state in which the substrate WF is held. . That is, as an example, the control device 900 brings the top ring 302 into contact with the polishing table 350 in a state where the substrate WF is not held, and acquires the height position of the top ring 302 at that time as a reference height. Next, the control device 900 brings the top ring 302 into contact with the polishing table 350 while holding the substrate WF, and acquires the height position of the top ring 302 at that time as the detected height.
• a reference standard
• the control device 900 can acquire the difference between the acquired reference height and the detected height as thickness information of the substrate WF. Further, the acquisition of the thickness information of the substrate WF in the acquisition step 3 may be performed based on detection by a sensor provided on the top ring 302.
• the top ring 302 is a sensor for detecting the distance between the substrate WF and the polishing pad 352, or a sensor for detecting the amount of swelling of the elastic film 4 when the substrate WF and the polishing pad 352 are in contact with each other.
• a sensor 264 provided on the retainer member 3 may be provided (see FIG. 10). Sensor 264 may be any type of sensor, such as an optical ranging sensor. Additionally, the sensor 264 may be provided on the polishing table 350.
• the sensor 264 may be provided below the polishing table 350, and the polishing table 350 and the polishing pad 352 may have an opening through which sensing light from the sensor 264 can pass.
• a window member through which sensing light can pass may be placed in the opening of polishing table 350 and polishing pad 352.
• the window member may be made of a light transmitting material, specifically a light transmitting member made of a transparent material (eg, transparent plastic, transparent glass, etc.). By arranging the window member, it is possible to prevent the sensor 264 from being exposed to pure water, polishing liquid, or the like. Note that when bringing the top ring 302 or the substrate WF into contact with the polishing pad 352 in order to obtain thickness information of the substrate WF, the top ring 302 and the polishing pad 352 are not rotated. 352 is preferably contacted.
• the thickness information may be stored in the storage device 900a of the control device 900 by external input.
• the control device 900 can acquire the thickness information of the substrate WF by reading the thickness information of the substrate WF stored in the storage device 900a.
• thickness information of one or several substrates WF is acquired, and for subsequent substrates WF, Previously acquired thickness information may be used.
• the control device 900 Upon acquiring the thickness information of the substrate WF, the control device 900 calculates the height position of the top ring 302 with respect to the polishing table 350 based on the acquired thickness information (S14). As a specific example, the control device 900 may calculate the optimal position of the top ring 302 before polishing from the height of the surface of the polishing pad 352. The optimal position of the top ring 302 is determined based on the thickness information of the substrate WF, so that the membrane height defined as the gap between the top ring body 2 and the elastic membrane 4 is within a predetermined desired range.
• the control device 900 calculates the height position of the top ring 302 based on the thickness information of the substrate WF.
• FIG. 12 is a cross-sectional view of the top ring and polishing pad when the substrate thickness is relatively small, according to one embodiment, and FIG. 13 is a cross-sectional view of the top ring and polishing pad when the substrate thickness is relatively large, according to one embodiment.
• FIG. 3 is a cross-sectional view showing a ring and a polishing pad.
• the control device 900 may calculate the height position of the top ring 302 in consideration of the thickness information of the substrate WF so that the membrane height MH falls within a substantially constant range.
• control device 900 then adjusts the height position of the top ring 302 with respect to the polishing table 350 so as to match the calculated height position of the top ring (step S16). Then, the control device 900 polishes the substrate WF by pressing the substrate WF against the polishing pad 352 while rotating the polishing table 350 and the top ring 302 together with the rotation of the top ring 302 and the polishing table 350 (step S18).
• control device 900 may polish the substrate WF with only one of the polishing units 300A and 300B, or may polish the same substrate WF in two stages with the polishing unit 300A and the polishing unit 300B.
• the thickness information of the substrate WF acquired before polishing the substrate WF in the polishing unit 300A and the substrate WF in the polishing unit 300A The amount of polishing of the top ring 302 on the polishing table 350 of the polishing unit 300B is based on the amount of polishing of the WF, or based on the thickness information of the substrate WF acquired in the transport unit 200B before polishing the substrate WF in the polishing unit 300B.
• the height position may be adjusted. In this way, even in the polishing in the polishing unit 300B, which is the second stage of polishing, the position of the top ring 302 can be adjusted to an appropriate position.
• the amount of polishing performed by the polishing unit 300A may be a numerical value predetermined by simulation or the like, or may be determined by the amount of time required for polishing by the polishing unit 300A, the amount of pressurized fluid applied to the elastic membrane 4, etc. It may be calculated based on.
• the arm 360 is swung to move the top ring 302 holding the substrate WF to the substrate transfer position of the transport unit 200. Thereafter, the vacuum suction of the top ring 302 is released, and the substrate WF is supported by the support columns 272 of the second stage 270. Thereafter, the pusher 230 is lowered to transfer the substrate WF onto the transport roller 202 (see FIG. 6).
• the polishing pad 352 is dressed, cleaned, etc. using the dressing unit 356, the atomizer 358, etc. in the polishing unit 300. At this time, it is preferable to measure the wear amount of the polishing pad 352 using the dresser 50 as described above. Furthermore, when adjusting the height position of the top ring 302 for successive new substrate polishing processes (FIG. 11: S14, S16), the control device 900 corrects the amount of wear on the polishing pad 352. It's okay.
• the control device 900 calculates the height position of the top ring 302 to be lowered by a distance corresponding to the previously measured wear amount of the polishing pad 352 for the polishing process of successive new substrates WF. It can also be used as a thing.
• the polishing pad 352 may be dressed and cleaned each time one substrate WF is polished, or the polishing pad 352 may be dressed and cleaned every time a plurality of substrates WF are polished. The pad 352 may also be dressed and washed. Further, the control device 900 controls one substrate WF based on the wear amount of the polishing pad 352 measured using the dresser 50 or based on the wear amount of the polishing pad 352 predetermined by the polishing recipe.
• the amount of wear of the polishing pad 352 during the polishing process may be estimated, or the amount of wear of the current polishing pad 352 may be estimated.
• the control device 900 may estimate the amount of wear of the polishing pad 352 when polishing one substrate WF by accumulating and averaging past data. When adjusting the height position of the top ring 302 (FIG. 11: S14, S16), the control device 900 also corrects the height position based on the estimated wear amount of the polishing pad 352. good.
• the transport roller 202 When the substrate WF is transferred from the polishing unit 300 to the transport unit 200, the transport roller 202 is started again to transport the substrate WF. When cleaning the substrate WF, the rotational speed of the transport roller 202 may be changed to a cleaning speed. While the substrate WF is being transported by the transport roller 202, cleaning liquid is sprayed toward the substrate WF from the upper cleaning nozzle 284a and the lower cleaning nozzle 284b to clean the substrate WF.
• the substrate WF is transported from the transport unit 200 to the drying unit 500 and dried, and then transported to the unload unit 600.
• the substrate WF transported to the unload unit 600 is transported to the exit by the transport rollers 202, and is transported outside the substrate polishing apparatus 1000.
• the thickness information of the substrate WF is acquired, the position of the top ring 302 with respect to the polishing table 350 is adjusted based on the acquired thickness information of the substrate WF, and the substrate WF is polished. Thereby, appropriate polishing processing can be performed for substrates WF of various sizes.
• the above-described substrate processing method is preferably performed without the substrate WF being ejected from the unload unit 600, that is, without being ejected from the processing line including the transport unit 200. In this way, the time required for the substrate polishing process can be shortened.
• a polishing table having a polishing surface, a top ring for holding a substrate and pressing it against the polishing surface, a vertical movement mechanism for vertically moving the top ring, and A substrate polishing method using a polishing apparatus equipped with a sensor for acquiring information regarding thickness is proposed.
• the top ring has a membrane that is an elastic membrane that forms a pressure chamber to which pressure fluid is supplied, and a top ring main body that holds the membrane. Configured to press against the polishing surface.
• the substrate polishing method includes an acquisition step of acquiring information regarding the thickness of the substrate using the sensor, and a position adjustment step of adjusting the height position of the top ring with respect to the polishing table based on the acquired information regarding the thickness of the substrate. and a polishing step of polishing the substrate by supplying pressure fluid to the pressure chamber and pressing the substrate against the polishing surface.
• a polishing step of polishing the substrate by adjusting the height position of the top ring with respect to the polishing table based on the thickness of the substrate, it is possible to polish substrates of various sizes.
• the acquiring step is performed by bringing the top ring holding the substrate into contact with the polishing table.
• the polishing apparatus includes a polishing table rotation mechanism for rotating the polishing table, and the acquiring step is performed while the polishing table is not rotating. be exposed.
• the polishing apparatus includes a pusher that transfers the substrate to and from the top ring, and the acquiring step includes transferring the substrate from the pusher to the top ring. This is done when the item is handed over.
• the acquiring step acquires information regarding the thickness of the substrate based on the distance that the pusher moves to deliver the substrate to the top ring.
• the polishing apparatus includes a transport unit for transporting the substrate, and the acquiring step includes obtaining information regarding the thickness of the substrate using a sensor provided in the transport unit. Get information.
• the polishing apparatus includes a processing line having a transport unit for transporting the substrate, and performs the acquiring step, the position adjustment step, and the polishing step. is performed without carrying out the substrate from the processing line.
• Embodiment 8 According to Embodiment 8, in Embodiment 1, the acquisition step is performed by external input to the polishing apparatus.
• a third step is performed based on the information regarding the thickness of the substrate acquired in the acquisition step and the amount of polishing of the substrate by the polishing step.
• a program for causing a processing device of a polishing apparatus to perform a control process of performing a polishing process on a processing surface of a substrate.
• the polishing device includes a polishing table having a polishing surface, a top ring for holding the substrate and pressing it against the polishing surface, a vertical movement mechanism for vertically moving the top ring, and acquiring information regarding the thickness of the substrate. and a sensor for supplying pressure fluid to the pressure chamber, the top ring having a membrane that is an elastic membrane forming a pressure chamber to which pressure fluid is supplied, and a top ring body that holds the membrane, and is configured to press the substrate against the polishing surface by supplying the polishing surface.
• the control process includes an acquisition step of acquiring information regarding the thickness of the substrate using the sensor, and a position adjustment of adjusting the height position of the top ring with respect to the polishing table based on the acquired information regarding the thickness of the substrate. and a polishing step of polishing the substrate by supplying a pressure fluid to the pressure chamber to press the substrate against the polishing surface.
• a polishing step of polishing the substrate by adjusting the height position of the top ring with respect to the polishing table based on the thickness of the substrate, it is possible to polish substrates of various sizes.
• a substrate polishing apparatus which comprises: a polishing table having a polishing surface; and a top ring for holding and pressing the substrate against the polishing surface.
• a top ring configured to press against the top ring, a vertical movement mechanism for moving the top ring up and down, a sensor for acquiring information regarding the thickness of the substrate, and information regarding the thickness of the substrate acquired by the sensor.
• a control device configured to polish the substrate by adjusting a height position of the top ring with respect to the polishing table based on the polishing table and supplying pressure fluid to the pressure chamber to press the substrate against the polishing surface; and.
• a control device configured to polish the substrate by adjusting a height position of the top ring with respect to the polishing table based on the polishing table and supplying pressure fluid to the pressure chamber to press the substrate against the polishing surface; and.

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• 2022
  • 2022-05-18 JP JP2022081873A patent/JP2023170262A/ja active Pending
• 2023
  • 2023-05-12 KR KR1020247039693A patent/KR20250011125A/ko active Pending
  • 2023-05-12 CN CN202380053519.3A patent/CN119546417A/zh active Pending
  • 2023-05-12 WO PCT/JP2023/017893 patent/WO2023223959A1/ja not_active Ceased
  • 2023-05-12 US US18/866,312 patent/US20250312882A1/en active Pending
  • 2023-05-12 EP EP23807562.6A patent/EP4527553A1/en active Pending
  • 2023-05-17 TW TW112118257A patent/TW202408724A/zh unknown

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