WO2023218698A1 - 半導体受光素子 - Google Patents

半導体受光素子 Download PDF

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Publication number
WO2023218698A1
WO2023218698A1 PCT/JP2023/001523 JP2023001523W WO2023218698A1 WO 2023218698 A1 WO2023218698 A1 WO 2023218698A1 JP 2023001523 W JP2023001523 W JP 2023001523W WO 2023218698 A1 WO2023218698 A1 WO 2023218698A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor layer
semiconductor
receiving element
light receiving
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/001523
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English (en)
French (fr)
Japanese (ja)
Inventor
桂基 田口
兆 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to CN202380040000.1A priority Critical patent/CN119183613A/zh
Priority to DE112023002255.0T priority patent/DE112023002255T5/de
Priority to US18/860,184 priority patent/US20250287721A1/en
Priority to GB2416982.3A priority patent/GB2634410A/en
Publication of WO2023218698A1 publication Critical patent/WO2023218698A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes

Definitions

  • An object of the present disclosure is to provide a semiconductor light receiving element that can suppress a decrease in sensitivity.
  • the semiconductor light-receiving device includes [1] “a surface receiving light incidence, a first semiconductor layer of a first conductivity type, and a layer stacked on the first semiconductor layer on the surface side of the first semiconductor layer. , a second semiconductor layer of the first conductivity type having a bandgap energy larger than that of the first semiconductor layer; and at least the second semiconductor layer extending from the surface toward the second semiconductor layer.
  • the semiconductor light-receiving device may be [5] “the semiconductor light-receiving device according to [4] above, in which the doping region is exposed on the side surface of the recessed portion”. According to the semiconductor light-receiving device according to [5], it is also possible to extract as a signal light incident on the gap between the portion exposed on the side surface of the recess in the doped region and the portion opposing the portion. As a result, a decrease in sensitivity can be suppressed more reliably.
  • the doped region includes a portion formed from the side surface of the recess to the top surface of the recess (region defining the recess on the surface). This portion is thicker and has a higher impurity concentration portion on the surface side than the portion formed on the bottom side of the recess in the doped region. Therefore, it is possible to reduce the contact resistance by making contact with the electrode at this portion.
  • the semiconductor light-receiving device includes [6] “a third semiconductor layer of the first conductivity type stacked on the second semiconductor layer on the surface side of the second semiconductor layer;
  • the semiconductor light receiving element according to any one of [5] may be used.
  • dark current and absorption are reduced by using a material having a larger band gap energy as the second semiconductor layer than the first semiconductor layer and the third semiconductor layer. , it becomes possible to further reduce loss.
  • the semiconductor light-receiving device includes [7] "a fourth semiconductor layer of the first conductivity type stacked on the third semiconductor layer on the surface side of the third semiconductor layer," It may also be the semiconductor light-receiving device described above. According to the semiconductor light-receiving device according to [7], since the fourth semiconductor layer has a function of protecting the third semiconductor layer, a material that is relatively easily oxidized, such as aluminum, is used as the material for the third semiconductor layer. The degree of freedom in selecting a material for the third semiconductor layer is improved, such as by being able to select a material containing .
  • the substrate is made of, for example, InP of a first conductivity type (for example, n + type).
  • the buffer layer is made of, for example, InP of a first conductivity type (for example, n + type or n type).
  • the buffer layer has a thickness of about 0.5 ⁇ m to 2.0 ⁇ m in the first direction.
  • the light absorption layer 21 contains, for example, InGaAs of the first conductivity type (consists of InGaAs).
  • the light absorption layer 21 has a thickness of about 1.5 ⁇ m to 5 ⁇ m in the first direction.
  • a recess 50 is formed on the surface 1a.
  • the surface 1a has a circular shape when viewed from the first direction (that is, the outer shape of the semiconductor light receiving element 1 is circular), and the recess 50 has a circular shape concentric with the surface 1a when viewed from the first direction.
  • the recess 50 includes a bottom surface 50i and a side surface 50s connecting the bottom surface 50i and the surface 1a.
  • the recess 50 penetrates the second cap layer 24 and the semiconductor layer 23. Therefore, the first cap layer 22 is exposed at the bottom surface 50i of the recess 50 (that is, the surface of the first cap layer 22 constitutes the bottom surface 50i).
  • the first semiconductor section 10 and the second semiconductor section 20 include a first region A overlapping the bottom surface 50i of the recess 50 when viewed from the first direction, and a second region B outside the first region A.
  • the semiconductor layer 23 and the second cap layer 24 are formed only in the second region B outside the recess 50.
  • the first region A which mainly overlaps the bottom surface 50i of the recess 50 when viewed from the first direction, is configured to be relatively thin, and serves as a light-receiving section 55 that generates an electric signal upon receiving light. There is.
  • the protective film F is provided to cover the surface 1a, the side surfaces 50s of the recess 50, and the bottom surface 50i of the recess 50.
  • the protective film F may have a function as an antireflection film.
  • a through hole Fh is formed in the protective film F on the second region B, and the second cap layer 24 is exposed from this through hole Fh.
  • the electrode 41 is formed on the back surface 1b and is in contact with the first semiconductor section 10 (for example, the substrate).
  • the electrode 42 is formed on the protective film F and is in contact with the second cap layer 24 via the through hole Fh.
  • the doping region 30 is formed in the first cap layer 22 and a part of the light absorption layer 21 on the first cap layer 22 side
  • the doping region 30 is formed in the first cap layer 22 and a part of the light absorption layer 21 on the first cap layer 22 side. It is formed in the layer 24, the semiconductor layer 23, the first cap layer 22, and a part of the light absorption layer 21 on the first cap layer 22 side.
  • the through hole Fh of the protective film F is formed on the doping region 30, and the electrode 42 is in contact with the doping region 30 in the second cap layer 24 (electrically connected to the doping region 30).
  • the first extending portion 31a and the second extending portion 31b are arranged in a grid pattern by intersecting each other.
  • the first extending portion 31a and the second extending portion 31b are connected to and integrated with the outer edge portion 32 of the doping region 30 at both ends in the respective extending directions.
  • the electrode 42 is provided in contact with the outer edge portion 32, each of the first extending portion 31a and the second extending portion 31b is also electrically connected to the electrode 42.
  • the doped region 30 extends from the first cap layer 22 toward the light absorption layer 21 and reaches the inside of the light absorption layer 21 .
  • the doped region 30 may be configured in this manner.
  • the semiconductor light receiving element 1 includes a first conductivity type semiconductor layer 23 stacked on the first cap layer 22 on the surface 1a side of the first cap layer 22. Therefore, by using a material with a larger band gap energy than the light absorption layer 21 and the semiconductor layer 23 as the first cap layer 22, it is possible to further reduce loss by reducing dark current and absorption. becomes.
  • the cap layer 25 is laminated on the light absorption layer 21 on the surface 1a side of the light absorption layer 21, and has an interface with the light absorption layer 21.
  • the cap layer 25 contains (is made of InP) InP of a first conductivity type (for example, n-type).
  • the doped region 30 is formed to extend from the surface 1a toward the cap layer 25 and reach at least the inside of the cap layer 25. More specifically, the doped region 30 extends from the cap layer 25 toward the light absorption layer 21 and reaches the inside of the light absorption layer 21 . In this way, the semiconductor light receiving element 1A does not need to have the semiconductor layer 23 and the second cap layer 24 on the light absorption layer 21.
  • FIG. 6(b) is a schematic cross-sectional view showing a semiconductor light receiving element 1B according to a second modification.
  • the semiconductor light receiving element 1B shown in FIG. 6B differs from the semiconductor light receiving element 1 in that it includes a second semiconductor part 20B instead of the second semiconductor part 20 and in the materials of each layer.
  • the second semiconductor section 20B has a single cap layer (second semiconductor layer) 26 instead of the first cap layer 22, and a semiconductor layer (third semiconductor layer) 27 instead of the semiconductor layer 23. It is different from the second semiconductor section 20 in this point.
  • the material of the first semiconductor section 10 includes InAsSb. More specifically, in the semiconductor light-receiving device 1B, at least the light absorption layer 21 includes (is made of InAsSb) InAsSb of the first conductivity type (for example, n-type and n + type).
  • the cap layer 26 is laminated on the light absorption layer 21 on the surface 1a side, and has an interface with the light absorption layer 21.
  • the cap layer 26 includes (is made of AlInAsSb) AlInAsSb of a first conductivity type (for example, n-type).
  • the semiconductor layer 27 includes (is made of InAsSb) InAsSb of a first conductivity type (for example, n-type).
  • FIG. 7(a) is a schematic plan view showing a semiconductor light receiving element 1C according to a third modification.
  • the semiconductor light receiving element 1C shown in FIG. 7(a) differs from the semiconductor light receiving element 1 in the shape of the doped region 30 when viewed from the first direction.
  • the plurality of portions 31 of the doped region 30 include a fourth extending portion 31d extending along one direction (here, the X-axis direction) intersecting the first direction, and a first and a fifth extending portion 31e extending along another direction (here, the Y-axis direction) intersecting the direction.
  • the fourth extending portion 31d and the fifth extending portion 31e intersect with each other.
  • the intersection of the fourth extending portion 31d and the fifth extending portion 31e substantially coincides with the center of the third extending portion 31c and the outer edge portion 32 here.
  • the fourth extending portion 31d and the fifth extending portion 31e are connected to the outer edge portion 32 at both ends in the respective extending directions.
  • the third extending portion 31c is connected to the outer edge portion 32 via the fourth extending portion 31d and the fifth extending portion 31e.
  • the gap between the fourth extending portion 31d and the fifth extending portion 31e is as follows: Although the thickness differs at each position within the plane intersecting the first direction, for example, the average value thereof may be larger than the thickness T22.
  • Such a semiconductor light-receiving element 1C can also provide the same effects as the semiconductor light-receiving element 1. Further, according to the semiconductor light receiving element 1C, it is possible to easily design a gap (gap 30 g) even in a circular shape, and it is also possible to design a design that maximizes the relationship between the doped region 30 and the gap by combining them. Become. [Fourth modification]
  • FIG. 7(b) is a schematic plan view showing a semiconductor light receiving element 1D according to a fourth modification.
  • the semiconductor light receiving element 1D shown in FIG. 7(b) differs from the semiconductor light receiving element 1 in that it has a rectangular outer shape when viewed from the first direction, and in the shape of the doped region 30 when viewed from the first direction. are doing.
  • the plurality of portions 31 of the doped region 30 include a pair of sixth extending portions 31f extending along one direction (here, the Y-axis direction) intersecting the first direction.
  • the sixth extending portions 31f extend in the same direction. Therefore, the gap 30g is formed between the sixth extension parts 31f, and at least the width G30 of the gap 30g is made larger than the thickness T22 of the first cap layer 22.
  • the pair of outer edge portions 32 also extend along the same direction as the sixth extending portion 31f. Therefore, the gap between one outer edge part 32 and the sixth extension part 31f adjacent to the one outer edge part 32 may be made larger than the thickness T22 as the gap 30g.
  • the doping region 30 includes a single seventh extending portion 31h extending along another direction (here, the X-axis direction).
  • the seventh extending portion 31h is connected to the outer edge portion 32 at both ends in its extending direction.
  • the sixth extending portion 31f is connected to the outer edge portion 32 via the seventh extending portion 31h by being connected to the seventh extending portion 31h.
  • Such a semiconductor light-receiving element 1D can also provide the same effects as the semiconductor light-receiving element 1. Further, the semiconductor light receiving element 1D can easily be arranged in plurality in an array as shown in FIG.
  • the recesses 50 may be formed individually between a plurality of semiconductor light receiving elements 1D. good. In this case, between adjacent semiconductor light-receiving elements 1D, the recesses 50 facing each other are separated by the remaining unetched surface 1a (relatively thick portion of the second semiconductor part 20). They will be separated. [Other variations]
  • the materials for the first cap layer 22, the second cap layer 24, and the cap layers 25 and 26 are not limited to InP and AlInAsSb, but may also include InAsP, AlInP, AllnAsP, InPSb, GaN, etc.
  • Various semiconductors including P, Al, As, Sb, and G can be used.
  • the doped region 30 includes a plurality of third extending portions 31c having mutually different diameters (concentric), and there is a gap between them that is larger than the thickness T22. 30g may be specified.
  • an undoped region in other words, a region other than the doped region 30 The same applies hereinafter) may be provided.
  • one undoped linear region extending on the fourth extending portion 31d and another undoped linear region extending on the fifth extending portion 31e By providing the third extending portion 31c and the outer edge portion 32, the third extending portion 31c and the outer edge portion 32 may be equally divided into four arc-shaped portions.
  • the positions of the sixth extending part 31f and the seventh extending part 31h can also be arbitrarily changed.
  • the doping regions 30 may be arranged such that their ends in the extending direction of the outer edge portion 32 (in this case, the Y-axis direction) are connected to each other, and the doping region 30 as a whole is formed in a rectangular annular shape when viewed from the first direction. good.
  • the one seventh extending portion 31h is located at the center of the outer edge portion 32 in the extending direction.
  • the doping regions 30 may be arranged so as to be connected to each other, so that the doped region 30 is H-shaped as a whole when viewed from the first direction.
  • each configuration of the semiconductor light receiving elements 1 to 1D can be adopted by partially replacing them.
  • the pattern of the doping region 30 of the semiconductor light receiving elements 1C and 1D may be adopted as the doping region 30 of the semiconductor light receiving element 1A and the semiconductor light receiving element 1B.

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  • Light Receiving Elements (AREA)
PCT/JP2023/001523 2022-05-13 2023-01-19 半導体受光素子 Ceased WO2023218698A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202380040000.1A CN119183613A (zh) 2022-05-13 2023-01-19 半导体受光元件
DE112023002255.0T DE112023002255T5 (de) 2022-05-13 2023-01-19 Halbleiter-lichtempfangselement
US18/860,184 US20250287721A1 (en) 2022-05-13 2023-01-19 Semiconductor light-receiving element
GB2416982.3A GB2634410A (en) 2022-05-13 2023-01-19 Semiconductor light-receiving element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022079384A JP2023167864A (ja) 2022-05-13 2022-05-13 半導体受光素子
JP2022-079384 2022-05-13

Publications (1)

Publication Number Publication Date
WO2023218698A1 true WO2023218698A1 (ja) 2023-11-16

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PCT/JP2023/001523 Ceased WO2023218698A1 (ja) 2022-05-13 2023-01-19 半導体受光素子

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US (1) US20250287721A1 (enExample)
JP (1) JP2023167864A (enExample)
CN (1) CN119183613A (enExample)
DE (1) DE112023002255T5 (enExample)
GB (1) GB2634410A (enExample)
WO (1) WO2023218698A1 (enExample)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177142A (ja) * 1999-12-16 2001-06-29 Hamamatsu Photonics Kk 受光素子
JP2009206499A (ja) * 2008-02-01 2009-09-10 Sumitomo Electric Ind Ltd 受光素子、受光素子アレイおよびそれらの製造方法
JP2010056147A (ja) * 2008-08-26 2010-03-11 Hamamatsu Photonics Kk 半導体受光素子
US20120043584A1 (en) * 2010-08-23 2012-02-23 Joshi Abhay M Low-noise large-area photoreceivers with low capacitance photodiodes
JP2012060077A (ja) * 2010-09-13 2012-03-22 Hamamatsu Photonics Kk 半導体受光素子及び半導体受光素子の製造方法
JP2014110380A (ja) * 2012-12-04 2014-06-12 Sumitomo Electric Ind Ltd アレイ型受光素子、及びアレイ型受光素子を製造する方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5434847B2 (ja) * 2010-08-17 2014-03-05 住友電装株式会社 端子金具

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177142A (ja) * 1999-12-16 2001-06-29 Hamamatsu Photonics Kk 受光素子
JP2009206499A (ja) * 2008-02-01 2009-09-10 Sumitomo Electric Ind Ltd 受光素子、受光素子アレイおよびそれらの製造方法
JP2010056147A (ja) * 2008-08-26 2010-03-11 Hamamatsu Photonics Kk 半導体受光素子
US20120043584A1 (en) * 2010-08-23 2012-02-23 Joshi Abhay M Low-noise large-area photoreceivers with low capacitance photodiodes
JP2012060077A (ja) * 2010-09-13 2012-03-22 Hamamatsu Photonics Kk 半導体受光素子及び半導体受光素子の製造方法
JP2014110380A (ja) * 2012-12-04 2014-06-12 Sumitomo Electric Ind Ltd アレイ型受光素子、及びアレイ型受光素子を製造する方法

Also Published As

Publication number Publication date
US20250287721A1 (en) 2025-09-11
CN119183613A (zh) 2024-12-24
GB202416982D0 (en) 2025-01-01
GB2634410A (en) 2025-04-09
DE112023002255T5 (de) 2025-02-27
JP2023167864A (ja) 2023-11-24

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