GB2634410A - Semiconductor light-receiving element - Google Patents

Semiconductor light-receiving element Download PDF

Info

Publication number
GB2634410A
GB2634410A GB2416982.3A GB202416982A GB2634410A GB 2634410 A GB2634410 A GB 2634410A GB 202416982 A GB202416982 A GB 202416982A GB 2634410 A GB2634410 A GB 2634410A
Authority
GB
United Kingdom
Prior art keywords
semiconductor layer
light receiving
semiconductor
receiving element
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB2416982.3A
Other languages
English (en)
Other versions
GB202416982D0 (en
Inventor
Taguchi Keiki
Ishihara Hajime
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of GB202416982D0 publication Critical patent/GB202416982D0/en
Publication of GB2634410A publication Critical patent/GB2634410A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes

Landscapes

  • Light Receiving Elements (AREA)
GB2416982.3A 2022-05-13 2023-01-19 Semiconductor light-receiving element Pending GB2634410A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022079384A JP2023167864A (ja) 2022-05-13 2022-05-13 半導体受光素子
PCT/JP2023/001523 WO2023218698A1 (ja) 2022-05-13 2023-01-19 半導体受光素子

Publications (2)

Publication Number Publication Date
GB202416982D0 GB202416982D0 (en) 2025-01-01
GB2634410A true GB2634410A (en) 2025-04-09

Family

ID=88729936

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2416982.3A Pending GB2634410A (en) 2022-05-13 2023-01-19 Semiconductor light-receiving element

Country Status (6)

Country Link
US (1) US20250287721A1 (enExample)
JP (1) JP2023167864A (enExample)
CN (1) CN119183613A (enExample)
DE (1) DE112023002255T5 (enExample)
GB (1) GB2634410A (enExample)
WO (1) WO2023218698A1 (enExample)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177142A (ja) * 1999-12-16 2001-06-29 Hamamatsu Photonics Kk 受光素子
JP2009206499A (ja) * 2008-02-01 2009-09-10 Sumitomo Electric Ind Ltd 受光素子、受光素子アレイおよびそれらの製造方法
JP2010056147A (ja) * 2008-08-26 2010-03-11 Hamamatsu Photonics Kk 半導体受光素子
JP2012043584A (ja) * 2010-08-17 2012-03-01 Sumitomo Wiring Syst Ltd 端子金具
JP2012060077A (ja) * 2010-09-13 2012-03-22 Hamamatsu Photonics Kk 半導体受光素子及び半導体受光素子の製造方法
JP2014110380A (ja) * 2012-12-04 2014-06-12 Sumitomo Electric Ind Ltd アレイ型受光素子、及びアレイ型受光素子を製造する方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598673B2 (en) * 2010-08-23 2013-12-03 Discovery Semiconductors, Inc. Low-noise large-area photoreceivers with low capacitance photodiodes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177142A (ja) * 1999-12-16 2001-06-29 Hamamatsu Photonics Kk 受光素子
JP2009206499A (ja) * 2008-02-01 2009-09-10 Sumitomo Electric Ind Ltd 受光素子、受光素子アレイおよびそれらの製造方法
JP2010056147A (ja) * 2008-08-26 2010-03-11 Hamamatsu Photonics Kk 半導体受光素子
JP2012043584A (ja) * 2010-08-17 2012-03-01 Sumitomo Wiring Syst Ltd 端子金具
JP2012060077A (ja) * 2010-09-13 2012-03-22 Hamamatsu Photonics Kk 半導体受光素子及び半導体受光素子の製造方法
JP2014110380A (ja) * 2012-12-04 2014-06-12 Sumitomo Electric Ind Ltd アレイ型受光素子、及びアレイ型受光素子を製造する方法

Also Published As

Publication number Publication date
WO2023218698A1 (ja) 2023-11-16
US20250287721A1 (en) 2025-09-11
CN119183613A (zh) 2024-12-24
GB202416982D0 (en) 2025-01-01
DE112023002255T5 (de) 2025-02-27
JP2023167864A (ja) 2023-11-24

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