WO2023209871A1 - ウエハ加工装置、半導体チップの製造方法および半導体チップ - Google Patents
ウエハ加工装置、半導体チップの製造方法および半導体チップ Download PDFInfo
- Publication number
- WO2023209871A1 WO2023209871A1 PCT/JP2022/019104 JP2022019104W WO2023209871A1 WO 2023209871 A1 WO2023209871 A1 WO 2023209871A1 JP 2022019104 W JP2022019104 W JP 2022019104W WO 2023209871 A1 WO2023209871 A1 WO 2023209871A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- section
- dicing
- unloading
- loading
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 198
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000008569 process Effects 0.000 claims abstract description 33
- 235000012431 wafers Nutrition 0.000 claims description 651
- 238000001816 cooling Methods 0.000 claims description 86
- 238000010438 heat treatment Methods 0.000 claims description 63
- 238000012546 transfer Methods 0.000 claims description 29
- 230000032258 transport Effects 0.000 claims description 20
- 230000007246 mechanism Effects 0.000 description 119
- 238000003825 pressing Methods 0.000 description 41
- 238000003860 storage Methods 0.000 description 22
- 239000010410 layer Substances 0.000 description 20
- 238000003384 imaging method Methods 0.000 description 10
- 238000012423 maintenance Methods 0.000 description 10
- 238000005498 polishing Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000002452 interceptive effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003333 near-infrared imaging Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Definitions
- the present invention relates to a wafer processing apparatus, a semiconductor chip manufacturing method, and a semiconductor chip, and particularly relates to a wafer processing apparatus including a dicing section for dicing a wafer, a semiconductor chip manufacturing method, and a semiconductor chip.
- This invention has been made to solve the above-mentioned problems, and one object of the invention is to process wafers even when a part of a plurality of processing processes is performed. It is an object of the present invention to provide a wafer processing apparatus, a semiconductor chip manufacturing method, and a semiconductor chip that can perform the processing efficiently.
- the wafer loading/unloading section is arranged to be sandwiched between the dicing section and the wafer processing section. This allows wafers to be directly supplied to one of the dicing section and wafer processing section from the cassette section without going through the other of the dicing section and wafer processing section. Processing can be performed by As a result, the wafer can be efficiently processed even when a part of the plurality of processing processes is performed. Further, when the processing by the dicing section and the wafer processing section is performed successively, a plurality of processing operations can be performed by moving the wafer between the dicing section and the wafer processing section.
- the wafer transport section includes a stretchable sheet member to which the wafer is attached, and a ring-shaped member that is attached to the sheet member in a state surrounding the wafer.
- the wafer ring structure is configured to be transported between a wafer loading/unloading section, a dicing section, and a wafer processing section.
- the wafer processing section preferably includes an expanding section that stretches the sheet member on which the wafer is placed and divides the wafer, or a gliding section that polishes the wafer.
- the wafer can be subjected to dicing and expanding processing, or gliding and dicing processing, either singly or successively.
- the cassette section holds the wafers.
- the wafer loading/unloading section is arranged on one side in the front-rear direction with respect to the loading/unloading section, the wafer loading/unloading section is positioned on the other side of the cassette section in the front/rear direction, the wafer cooling section of the expandable section is arranged on the side of the wafer loading/unloading section, and the wafer cooling section is placed on the side of the wafer loading/unloading section.
- the cassette section is arranged on one side of the wafer loading/unloading section in the front-rear direction, the wafer loading/unloading section is positioned on the other side of the cassette section in the front/rear direction, and the wafer cooling section of the expandable section is arranged on the side of the wafer loading/unloading section.
- the cassette section, the wafer loading/unloading section, the wafer cooling section of the expanding section, and the wafer heating section have a rectangular shape.
- the cassette section is arranged on one side of the wafer loading/unloading section in the front-rear direction, the wafer loading/unloading section is positioned on the other side of the cassette section in the front/rear direction, and the wafer cooling section of the expandable section is arranged on the side of the wafer loading/unloading section.
- the wafer heating section of the expanding section is disposed on one side of the wafer cooling section in the front-rear direction
- the wafer heating section further includes an ultraviolet irradiation section that irradiates the sheet member to which the wafer is attached with ultraviolet rays.
- the irradiation section is arranged at a position overlapping the wafer heating section in the front-back direction.
- FIG. 1 is a plan view showing a semiconductor wafer processing apparatus provided with a dicing apparatus and an expanding apparatus according to a first embodiment
- FIG. FIG. 2 is a plan view showing a wafer ring structure processed in the semiconductor wafer processing apparatus according to the first embodiment.
- 3 is a sectional view taken along line III-III in FIG. 2.
- FIG. FIG. 2 is a plan view of a dicing device disposed adjacent to the expanding device according to the first embodiment. It is a side view of the dicing device arranged adjacent to the expanding device according to the first embodiment, viewed from the Y2 direction side.
- FIG. 2 is a plan view of the expanding device according to the first embodiment.
- FIG. 2 is a side view of the expanding device according to the first embodiment as seen from the Y2 direction side.
- the dicing apparatus 1 includes a base 11, a chuck table section 12, a laser section 13, and an imaging section 14.
- the clamp part 12b is configured to hold down the wafer ring structure W attracted by the attraction part 12a.
- the clamp part 12b holds down the ring-shaped member W3 of the wafer ring structure W that is attracted by the attraction part 12a from the Z1 direction side. In this way, the wafer ring structure W is held by the suction part 12a and the clamp part 12b.
- a plurality (three) of wafer cassettes 202a are arranged in the Z direction.
- the wafer cassette 202a has an accommodation space that can accommodate a plurality (five) of wafer ring structures W.
- the wafer ring structure W is manually supplied and placed on the wafer cassette 202a.
- the wafer cassette 202a may accommodate one to four wafer ring structures W, or may accommodate six or more wafer ring structures W.
- one, two, four or more wafer cassettes 202a may be arranged in the Z direction.
- the lift-up hand section 203 includes a Y-direction moving mechanism 203a and a lift-up hand 203b.
- the Y-direction movement mechanism 203a includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
- the lift-up hand 203b is configured to support the ring-shaped member W3 of the wafer ring structure W from the Z2 direction side.
- the cooling unit 207 is provided at the wafer cooling position P4 of the expander main body 200. Further, the wafer cooling position P4 is located on the Y2 direction side of the expandable body section 200.
- the cooling unit 207 includes a cooling member 207a having a cooling body 271 and a Peltier element 272, and a Z-direction moving mechanism 207b.
- the cooling body 271 is made of a member having a large heat capacity and high thermal conductivity. Cooling body 271 is made of metal such as aluminum.
- the Peltier element 272 is configured to cool the cooling body 271. Note that the cooling body 271 is not limited to aluminum, and may be made of other members having a large heat capacity and high thermal conductivity.
- the Z direction moving mechanism 207b is a cylinder.
- the squeegee section 213 is configured to further divide the wafer W1 along the modified layer by locally pressing the wafer W1 from the Z2 direction side after expanding the sheet member W2. In other words, the squeegee section 213 brakes the divided wafer W1.
- the squeegee section 213 includes a pressing section 213a, a Z direction movement mechanism 213b, an X direction movement mechanism 213c, and a rotation mechanism 213d.
- the Z direction moving mechanism 214b is configured to move the clamp portion 214 in the Z direction. Specifically, the Z direction moving mechanism 214b is configured to move the grip portion 214a in the Z1 direction or the Z2 direction.
- the Z-direction movement mechanism 214b includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
- the Z direction moving mechanism 214b is attached to the Y direction moving mechanism 214c.
- the Y direction moving mechanism 214c is configured to move the Z direction moving mechanism 214b in the Y1 direction or the Y2 direction.
- the Y-direction movement mechanism 214c includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
- the fourth control section 104 is configured to control the cassette section 202 and the lift-up hand section 203.
- the fourth control unit 104 includes a CPU and a storage unit including ROM, RAM, and the like.
- the fifth control section 105 is configured to control the suction hand section 204.
- the fifth control unit 105 includes a CPU and a storage unit including ROM, RAM, and the like. Note that the fourth control unit 104 and the fifth control unit 105 may include, as a storage unit, an HDD or the like in which stored information is retained even after the voltage is cut off.
- step S1 the wafer ring structure W is taken out from the cassette section 202. That is, after the wafer ring structure W accommodated in the cassette part 202 is supported by the lift-up hand 203b, the lift-up hand 203b is moved in the Y1 direction by the Y-direction moving mechanism 31, thereby removing the wafer from the cassette part 202. The ring structure W is taken out.
- step S2 the wafer ring structure W is transferred to the chuck table section 12 of the dicing apparatus 1 by the suction hand 204c. That is, the wafer ring structure W taken out from the cassette section 202 is moved in the X2 direction by the X direction moving mechanism 204a while being sucked by the suction hand 204c. Then, the wafer ring structure W that has moved in the X2 direction is transferred from the suction hand 204c to the chuck table section 12, and then gripped by the chuck table section 12.
- step S3 a modified layer is formed on the wafer W1 by the laser unit 13.
- step S4 the wafer ring structure W having the wafer W1 on which the modified layer has been formed is transferred to the clamp section 214 by the suction hand 204c.
- step S5 the sheet member W2 is cooled by the cold air supply section 206 and the cooling unit 207. That is, the Z-direction moving mechanism 214b moves (lowers) the wafer ring structure W held by the clamp part 214 in the Z2 direction to contact the cooling unit 207, and the cold air supply part 206 supplies cold air from the Z1 direction side. By doing so, the sheet member W2 is cooled.
- step S10 the heat shrink section 211 heats and shrinks the sheet member W2, and the clamp section 214 rises. At this time, the air intake portion 210c sucks air near the heated sheet member W2.
- step S11 the wafer ring structure W is transferred from the clamp section 214 to the suction hand 204c. That is, the wafer ring structure W is moved in the Y2 direction by the Y direction moving mechanism 214c while being held by the clamp part 214. Then, after the wafer ring structure W is released from the grip by the clamp part 214 at a position on the Z1 direction side of the cooling unit 207, it is sucked by the suction hand 204c.
- the expanding device 2 shown in FIG. 12 is shown in a state before the sheet member W2 is expanded by the expand ring 281.
- the clamp part 214 is arranged at the raised position Up. That is, the grip portion 214a is placed in the raised position Up by the Z direction moving mechanism 214b.
- the ultraviolet irradiation unit 212 is configured to irradiate the expanded sheet member W2 with ultraviolet rays Ut from the Z2 direction side. Further, the ultraviolet irradiation unit 212 is arranged at a position in the Z2 direction of the wafer W1 of the expanded sheet member W2.
- the expander main body as a wafer processing section
- the cooling unit 207 at the wafer cooling position P4 of the section 200 and the heat shrink section 211 at the wafer heating position P5 are arranged side by side. Thereby, when moving the wafer W1 to the dicing apparatus 1 and the expander body section 200, it is possible to prevent the members of the heat shrink section 211 at the wafer heating position P5 from interfering with the wafer W1 to be moved.
- the cassette section 202, the lift-up hand section 203, the cooling unit 207 at the wafer cooling position P4 of the expandable body section 200, and the heat shrink section 211 at the wafer heating position P5 have a rectangular shape. It is located in As a result, when the cassette section 202, the lift-up hand section 203, the cooling unit 207 at the wafer cooling position P4 of the expander main body section 200, and the heat shrink section 211 at the wafer heating position P5 are arranged linearly along a predetermined direction. Since the area of the maintenance space provided around the apparatus can be reduced compared to the above, it is possible to suppress an increase in the area for installing the semiconductor wafer processing apparatus 100.
- the semiconductor wafer processing device 300 includes a dicing device 1 and an expanding device 302.
- the vertical direction is defined as the Z direction
- the upward direction is defined as the Z1 direction
- the downward direction is defined as the Z2 direction.
- the direction in which the dicing device 1 and the expanding device 302 are lined up is the X direction
- the expanding device 302 side in the X direction is the X1 direction
- the dicing device 1 side in the X direction is the X2 direction. do.
- the direction perpendicular to the X direction in the horizontal direction is the Y direction
- one side of the Y direction is the Y1 direction
- the other side of the Y direction is the Y2 direction.
- the expander 3208 includes an expander ring 3281 and a Z-direction moving mechanism 3282.
- the expand ring 3281 is configured to expand the sheet member W2 by supporting the sheet member W2 from the Z2 direction side.
- the expand ring 3281 has a ring shape in plan view.
- the Z direction moving mechanism 3282 is configured to move the expand ring 3281 in the Z1 direction or the Z2 direction.
- the Z-direction movement mechanism 3282 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
- the Z direction movement mechanism 3282 is attached to the base 205. In the expanded state, the upper end 3281a of the expand ring 3281 is maintained at a predetermined height position Hd by the Z direction movement mechanism 3282.
- the expansion control calculation section 3110, the handling control calculation section 3111, the dicing control calculation section 3112, and the storage section 3113 are respectively the first control section 101, the second control section 102, and the third control section 103 of the first embodiment.
- the semiconductor wafer processing device 400 includes a dicing device 1, a cassette section 202, a lift-up hand section 203, a suction hand section 204, and a gliding device 410.
- the vertical direction is defined as the Z direction
- the upward direction is defined as the Z1 direction
- the downward direction is defined as the Z2 direction.
- the direction in which the dicing device 1 and the gliding device 410 are lined up is the X direction
- the gliding device 410 side in the X direction is the X1 direction
- the dicing device 1 side in the X direction is the X2 direction. do.
- the direction perpendicular to the X direction in the horizontal direction is the Y direction
- one side of the Y direction is the Y1 direction
- the other side of the Y direction is the Y2 direction.
- the gliding device 410 includes a base 411, a wafer holding section 412, and a polishing section 413.
- the polishing section 413 polishes the wafer W1 held by the wafer holding section 412.
- the polishing section 413 is arranged above the wafer holding section 412 (in the Z1 direction).
- the lift-up hand section 203 is arranged so as to be sandwiched between the dicing device 1 and the gliding device 410. Specifically, the lift-up hand section 203 is arranged on the X1 direction side of the dicing apparatus 1 in the X direction. Further, the lift-up hand section 203 is arranged on the X2 direction side of the gliding device 410 in the X direction.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2024517702A JPWO2023209871A1 (enrdf_load_stackoverflow) | 2022-04-27 | 2022-04-27 | |
PCT/JP2022/019104 WO2023209871A1 (ja) | 2022-04-27 | 2022-04-27 | ウエハ加工装置、半導体チップの製造方法および半導体チップ |
TW112114666A TWI854607B (zh) | 2022-04-27 | 2023-04-20 | 晶圓加工裝置、半導體晶片之製造方法及半導體晶片 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2022/019104 WO2023209871A1 (ja) | 2022-04-27 | 2022-04-27 | ウエハ加工装置、半導体チップの製造方法および半導体チップ |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2023209871A1 true WO2023209871A1 (ja) | 2023-11-02 |
Family
ID=88518362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2022/019104 WO2023209871A1 (ja) | 2022-04-27 | 2022-04-27 | ウエハ加工装置、半導体チップの製造方法および半導体チップ |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2023209871A1 (enrdf_load_stackoverflow) |
TW (1) | TWI854607B (enrdf_load_stackoverflow) |
WO (1) | WO2023209871A1 (enrdf_load_stackoverflow) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000323439A (ja) * | 1999-05-14 | 2000-11-24 | Tokyo Seimitsu Co Ltd | ダイシング装置 |
JP2007235068A (ja) * | 2006-03-03 | 2007-09-13 | Tokyo Seimitsu Co Ltd | ウェーハ加工方法 |
JP2010125488A (ja) * | 2008-11-28 | 2010-06-10 | Apic Yamada Corp | 切断装置 |
JP2020061453A (ja) * | 2018-10-10 | 2020-04-16 | 株式会社ディスコ | パッケージ基板の加工方法 |
JP2021153113A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社ディスコ | 拡張装置及びデバイスチップの製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7498630B2 (ja) * | 2020-09-11 | 2024-06-12 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
-
2022
- 2022-04-27 JP JP2024517702A patent/JPWO2023209871A1/ja active Pending
- 2022-04-27 WO PCT/JP2022/019104 patent/WO2023209871A1/ja active Application Filing
-
2023
- 2023-04-20 TW TW112114666A patent/TWI854607B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000323439A (ja) * | 1999-05-14 | 2000-11-24 | Tokyo Seimitsu Co Ltd | ダイシング装置 |
JP2007235068A (ja) * | 2006-03-03 | 2007-09-13 | Tokyo Seimitsu Co Ltd | ウェーハ加工方法 |
JP2010125488A (ja) * | 2008-11-28 | 2010-06-10 | Apic Yamada Corp | 切断装置 |
JP2020061453A (ja) * | 2018-10-10 | 2020-04-16 | 株式会社ディスコ | パッケージ基板の加工方法 |
JP2021153113A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社ディスコ | 拡張装置及びデバイスチップの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2023209871A1 (enrdf_load_stackoverflow) | 2023-11-02 |
TW202347483A (zh) | 2023-12-01 |
TWI854607B (zh) | 2024-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7042944B2 (ja) | 搬送装置、および基板処理システム | |
JP7434463B2 (ja) | 基板搬送システム、および基板搬送方法 | |
TW201810398A (zh) | 晶圓加工系統 | |
US20220302077A1 (en) | Bonding apparatus, bonding system, and bonding method | |
WO2023209871A1 (ja) | ウエハ加工装置、半導体チップの製造方法および半導体チップ | |
JP2023162982A (ja) | ウエハ加工装置、半導体チップの製造方法および半導体チップ | |
WO2023209909A1 (ja) | ダイシング装置、半導体チップの製造方法および半導体チップ | |
WO2023209901A1 (ja) | エキスパンド装置、半導体チップの製造方法および半導体チップ | |
WO2023209891A1 (ja) | ウエハ加工装置、半導体チップの製造方法および半導体チップ | |
JP7624075B2 (ja) | エキスパンド装置、半導体チップの製造方法および半導体チップ | |
JP2023162929A (ja) | エキスパンド装置、半導体チップの製造方法および半導体チップ | |
WO2023209897A1 (ja) | ウエハ加工装置、半導体チップの製造方法および半導体チップ | |
JP2000156391A (ja) | 半導体ウェーハ検査装置 | |
JP7700251B2 (ja) | エキスパンド装置 | |
WO2023042261A1 (ja) | エキスパンド装置およびエキスパンド方法 | |
JP6789773B2 (ja) | 紫外線照射装置及び加工装置 | |
JP2023162897A (ja) | エキスパンド装置、半導体チップの製造方法および半導体チップ | |
WO2023209873A1 (ja) | ダイシング装置、半導体チップの製造方法および半導体チップ | |
TW202401641A (zh) | 搬送裝置以及位置資訊的記憶方法 | |
TW202320155A (zh) | 被加工物的分割方法 | |
WO2024161640A1 (ja) | レーザ加工装置、レーザ加工方法、半導体チップおよび半導体チップの製造方法 | |
JP2017069488A (ja) | 搬送機構 | |
KR20240040628A (ko) | 웨이퍼의 가공 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 22940150 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2024517702 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 22940150 Country of ref document: EP Kind code of ref document: A1 |