TWI854607B - 晶圓加工裝置、半導體晶片之製造方法及半導體晶片 - Google Patents
晶圓加工裝置、半導體晶片之製造方法及半導體晶片 Download PDFInfo
- Publication number
- TWI854607B TWI854607B TW112114666A TW112114666A TWI854607B TW I854607 B TWI854607 B TW I854607B TW 112114666 A TW112114666 A TW 112114666A TW 112114666 A TW112114666 A TW 112114666A TW I854607 B TWI854607 B TW I854607B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- section
- unit
- cutting
- wafers
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims abstract description 234
- 238000005520 cutting process Methods 0.000 claims abstract description 175
- 235000012431 wafers Nutrition 0.000 claims description 813
- 238000001816 cooling Methods 0.000 claims description 94
- 239000004065 semiconductor Substances 0.000 claims description 82
- 238000010438 heat treatment Methods 0.000 claims description 64
- 238000000227 grinding Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000001125 extrusion Methods 0.000 description 21
- 239000010410 layer Substances 0.000 description 20
- 238000005498 polishing Methods 0.000 description 16
- 230000032258 transport Effects 0.000 description 15
- 238000001179 sorption measurement Methods 0.000 description 12
- 238000003825 pressing Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 8
- 238000003698 laser cutting Methods 0.000 description 7
- 238000012423 maintenance Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 230000002452 interceptive effect Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/019104 WO2023209871A1 (ja) | 2022-04-27 | 2022-04-27 | ウエハ加工装置、半導体チップの製造方法および半導体チップ |
| WOPCT/JP2022/019104 | 2022-04-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202347483A TW202347483A (zh) | 2023-12-01 |
| TWI854607B true TWI854607B (zh) | 2024-09-01 |
Family
ID=88518362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112114666A TWI854607B (zh) | 2022-04-27 | 2023-04-20 | 晶圓加工裝置、半導體晶片之製造方法及半導體晶片 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2023209871A1 (enrdf_load_stackoverflow) |
| TW (1) | TWI854607B (enrdf_load_stackoverflow) |
| WO (1) | WO2023209871A1 (enrdf_load_stackoverflow) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007235068A (ja) * | 2006-03-03 | 2007-09-13 | Tokyo Seimitsu Co Ltd | ウェーハ加工方法 |
| JP2010125488A (ja) * | 2008-11-28 | 2010-06-10 | Apic Yamada Corp | 切断装置 |
| JP2021153113A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社ディスコ | 拡張装置及びデバイスチップの製造方法 |
| TW202215571A (zh) * | 2020-09-11 | 2022-04-16 | 日商捷進科技有限公司 | 晶粒接合裝置及半導體裝置的製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3415069B2 (ja) * | 1999-05-14 | 2003-06-09 | 株式会社東京精密 | ダイシング装置 |
| JP2020061453A (ja) * | 2018-10-10 | 2020-04-16 | 株式会社ディスコ | パッケージ基板の加工方法 |
-
2022
- 2022-04-27 JP JP2024517702A patent/JPWO2023209871A1/ja active Pending
- 2022-04-27 WO PCT/JP2022/019104 patent/WO2023209871A1/ja active Application Filing
-
2023
- 2023-04-20 TW TW112114666A patent/TWI854607B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007235068A (ja) * | 2006-03-03 | 2007-09-13 | Tokyo Seimitsu Co Ltd | ウェーハ加工方法 |
| JP2010125488A (ja) * | 2008-11-28 | 2010-06-10 | Apic Yamada Corp | 切断装置 |
| JP2021153113A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社ディスコ | 拡張装置及びデバイスチップの製造方法 |
| TW202215571A (zh) * | 2020-09-11 | 2022-04-16 | 日商捷進科技有限公司 | 晶粒接合裝置及半導體裝置的製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023209871A1 (ja) | 2023-11-02 |
| JPWO2023209871A1 (enrdf_load_stackoverflow) | 2023-11-02 |
| TW202347483A (zh) | 2023-12-01 |
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