WO2023176245A1 - 撮像素子、撮像装置及び撮像素子の製造方法 - Google Patents

撮像素子、撮像装置及び撮像素子の製造方法 Download PDF

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Publication number
WO2023176245A1
WO2023176245A1 PCT/JP2023/004831 JP2023004831W WO2023176245A1 WO 2023176245 A1 WO2023176245 A1 WO 2023176245A1 JP 2023004831 W JP2023004831 W JP 2023004831W WO 2023176245 A1 WO2023176245 A1 WO 2023176245A1
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Prior art keywords
photoelectric conversion
conversion film
upper electrode
image sensor
layer
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PCT/JP2023/004831
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English (en)
French (fr)
Japanese (ja)
Inventor
隆典 土居
順司 平瀬
良太 境田
俊介 磯野
優子 留河
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Priority to CN202380023675.5A priority Critical patent/CN118765438A/zh
Priority to JP2024507594A priority patent/JPWO2023176245A1/ja
Publication of WO2023176245A1 publication Critical patent/WO2023176245A1/ja
Priority to US18/822,525 priority patent/US20240423004A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Definitions

  • the present disclosure relates to an imaging device, an imaging device, and a method for manufacturing an imaging device.
  • Patent Documents 1 and 2 describe examples of image sensors.
  • Patent No. 5780402 International Publication No. 2019/239851 International Publication No. 2017/081847
  • the present disclosure provides a technique suitable for suppressing leakage current.
  • a photoelectric conversion film an upper electrode located above the photoelectric conversion film; a connection body electrically connected to the upper electrode, In a first cross section parallel to a direction perpendicular to the photoelectric conversion film, the connecting body contacts a side surface of the photoelectric conversion film, The upper electrode extends to the outside of the outer edge of the upper surface of the photoelectric conversion film. Provides an image sensor.
  • the technology according to the present disclosure is suitable for suppressing leakage current.
  • FIG. 1 is a circuit diagram showing a circuit configuration of an imaging device according to a first embodiment.
  • FIG. 2 is a cross-sectional view showing a device structure of a pixel according to the first embodiment.
  • FIG. 3A is a cross-sectional view of the image sensor according to the first embodiment.
  • FIG. 3B is a top view of the image sensor according to the first embodiment.
  • FIG. 4A is a partial cross-sectional view of the image sensor according to the first embodiment.
  • FIG. 4B is a partial cross-sectional view of the image sensor according to the first embodiment.
  • FIG. 4C is a partial cross-sectional view of the image sensor according to the first embodiment.
  • FIG. 4D is a partial cross-sectional view of the image sensor according to the first embodiment.
  • FIG. 5E is a cross-sectional view showing the manufacturing process of the image sensor according to the first embodiment.
  • FIG. 5F is a cross-sectional view showing the manufacturing process of the image sensor according to the first embodiment.
  • FIG. 5G is a cross-sectional view showing the manufacturing process of the image sensor according to the first embodiment.
  • FIG. 5H is a cross-sectional view showing the manufacturing process of the image sensor according to the first embodiment.
  • FIG. 6A is an explanatory diagram of dry etching in Embodiment 1.
  • FIG. 6B is an explanatory diagram of dry etching in Embodiment 1.
  • FIG. 6C is an explanatory diagram of dry etching in Embodiment 1.
  • FIG. 6D is an explanatory diagram of dry etching in Embodiment 1.
  • FIG. 6A is an explanatory diagram of dry etching in Embodiment 1.
  • FIG. 6B is an explanatory diagram of dry etching in Embodiment 1.
  • FIG. 6C
  • FIG. 9B is a partial cross-sectional view of the image sensor according to Embodiment 3.
  • FIG. 9C is a partial cross-sectional view of the image sensor according to Embodiment 3.
  • FIG. 9D is a partial cross-sectional view of the image sensor according to Embodiment 3.
  • FIG. 9E is a partial cross-sectional view of the image sensor according to Embodiment 3.
  • FIG. 10A is an explanatory diagram of dry etching in Embodiment 3.
  • FIG. 10B is an explanatory diagram of dry etching in Embodiment 3.
  • FIG. 11A is a partial cross-sectional view of an image sensor according to Embodiment 4.
  • FIG. 11B is a partial cross-sectional view of the image sensor according to Embodiment 4.
  • a photoelectric conversion film is sometimes processed by dry etching.
  • dry etching of a photoelectric conversion film the side surfaces of the photoelectric conversion film may be damaged by plasma or the like. This damage can cause leakage current in the image sensor. Therefore, the present disclosure provides a technique suitable for suppressing leakage current.
  • the image sensor according to the first aspect of the present disclosure includes: A photoelectric conversion film, an upper electrode located above the photoelectric conversion film; and a connection body electrically connected to the upper electrode.
  • the connecting body In a first cross section parallel to a direction perpendicular to the photoelectric conversion film, the connecting body contacts a side surface of the photoelectric conversion film, The upper electrode extends to the outside of the outer edge of the upper surface of the photoelectric conversion film.
  • the first aspect is suitable for suppressing leakage current.
  • the upper surface of the photoelectric conversion film may include a contact surface between the photoelectric conversion film and the upper electrode,
  • the side surface of the upper electrode may be located outside the side surface of the photoelectric conversion film at the same position as the contact surface in the direction perpendicular to the photoelectric conversion film.
  • the configuration of the image sensor in the second aspect is an example of the configuration of the image sensor.
  • the side surface of the upper electrode may include a first taper that extends outward from the upper surface toward the lower surface of the upper electrode.
  • the configuration of the upper electrode in the third aspect is an example of the configuration of the upper electrode.
  • an upper end of the side surface of the photoelectric conversion film may be located inside a lower end of the side surface of the photoelectric conversion film.
  • the fourth aspect is suitable for suppressing leakage current.
  • the image sensor may further include a first crack including a first part and a second part, In the first cross section, The first portion may be located inside and below the outer end of the upper electrode, The second portion may be located outside and above the outer end of the upper electrode, The second portion may be located within the connecting body.
  • the first crack of the fifth aspect can relieve stress in the connection body.
  • the photoelectric conversion film may include a photoelectric conversion layer and an upper layer,
  • the upper layer may be located above the photoelectric conversion layer,
  • the side surface of the upper layer may be located inside a straight line that includes an upper end of the side surface of the photoelectric conversion layer and a lower end of the side surface of the photoelectric conversion layer.
  • the sixth aspect is suitable for suppressing leakage current and suppressing concentration of electric field.
  • the seventh aspect is suitable for suppressing concentration of electric field.
  • a lower end of the side surface of the lower layer may be located inside an upper end of the side surface of the lower layer.
  • the eighth aspect is suitable for suppressing concentration of electric field.
  • the second crack of the ninth aspect can relieve stress in the connection body.
  • the structure of the photoelectric conversion film of the tenth aspect is an example of the structure of the photoelectric conversion film.
  • An imaging device includes: An image sensor according to any one of the first to thirteenth aspects, a peripheral circuit that controls the image sensor; Equipped with
  • the method for manufacturing an image sensor according to the fifteenth aspect of the present disclosure includes: Obtaining a structure including a photoelectric conversion film and an upper electrode located above the photoelectric conversion film; An etching gas that etches the photoelectric conversion film at a faster rate than the upper electrode etches the side surface while forming a space located inside and below the outer end of the upper electrode and exposing the side surface of the photoelectric conversion film.
  • Performing dry etching to remove the The method includes, after the dry etching, disposing a connecting body electrically connected to the upper electrode and in contact with the side surface.
  • the 16th aspect is suitable for suppressing leakage current and suppressing concentration of electric field.
  • planar view refers to the view from the thickness direction of the photoelectric conversion film.
  • the peripheral circuit 102 includes a voltage control circuit 60.
  • Voltage control circuit 60 applies a control voltage to upper electrode 52 via electrode signal line 16 .
  • the control voltage By changing the control voltage, the spectral sensitivity characteristics of the photoelectric conversion film 51 can be changed.
  • a voltage corresponding to the amount of signal charge accumulated in the charge storage node 24 is applied to the gate electrode of the amplification transistor 11.
  • the amplification transistor 11 amplifies the voltage applied to the gate electrode.
  • the amplified voltage is selectively read out as a signal voltage by the address transistor 13.
  • the imaging device 500 includes a power supply wiring 21, a plurality of vertical signal lines 17, a plurality of address signal lines 26, and a plurality of reset signal lines 27. By connecting these lines to a plurality of pixels 14, it is possible to selectively perform the above-described operation in a plurality of pixels 14.
  • the vertical scanning circuit 15 applies a row selection signal to the gate electrode of the address transistor 13 via the address signal line 26.
  • the row selection signal controls turning on and off of the address transistor 13.
  • a row to be read is scanned and selected.
  • a signal voltage is read out from each pixel 14 arranged in the selected row to the vertical signal line 17 of the column to which the pixel 14 belongs.
  • the column signal processing circuit 19 performs noise suppression signal processing, analog-to-digital conversion (AD conversion), and the like.
  • Noise suppression signal processing includes, for example, correlated double sampling.
  • FIG. 2 is a cross-sectional view showing the device structure of the pixel 14 according to the first embodiment.
  • the pixel 14 includes a semiconductor substrate 31, a charge detection circuit 25, and a photodetector 10.
  • the semiconductor substrate 31 is, for example, a p-type silicon substrate.
  • Charge detection circuit 25 detects signal charges captured by lower electrode 50 and outputs a signal voltage.
  • Charge detection circuit 25 includes an amplification transistor 11, a reset transistor 12, and an address transistor 13.
  • Charge detection circuit 25 is provided on semiconductor substrate 31 .
  • the amplification transistor 11 includes an n-type impurity region 41C, an n-type impurity region 41D, a gate insulating layer 38B, and a gate electrode 39B.
  • N-type impurity region 41C is located within semiconductor substrate 31 and functions as a drain.
  • N-type impurity region 41D is located within semiconductor substrate 31 and functions as a source.
  • Gate insulating layer 38B is located on semiconductor substrate 31.
  • Gate electrode 39B is located on gate insulating layer 38B.
  • the reset transistor 12 includes an n-type impurity region 41B, an n-type impurity region 41A, a gate insulating layer 38A, and a gate electrode 39A.
  • N-type impurity region 41B is located within semiconductor substrate 31 and functions as a drain.
  • N-type impurity region 41A is located within semiconductor substrate 31 and functions as a source.
  • Gate insulating layer 38A is located on semiconductor substrate 31.
  • Gate electrode 39A is located on gate insulating layer 38A.
  • An element isolation region 42 is provided in the semiconductor substrate 31.
  • the element isolation region 42 is provided between the adjacent pixels 14 and between the amplification transistor 11 and the reset transistor 12.
  • the element isolation region 42 provides electrical isolation between adjacent pixels 14, and also suppresses leakage of signal charges accumulated at the charge accumulation node 24.
  • the contact plug 45A is connected to the n-type impurity region 41B, which is the drain of the reset transistor 12.
  • Contact plug 45B is connected to gate electrode 39B of amplification transistor 11.
  • Wiring 46A connects contact plug 45A and contact plug 45B.
  • n-type impurity region 41B of reset transistor 12 is electrically connected to gate electrode 39B of amplification transistor 11.
  • the wiring 46A is electrically connected to the lower electrode 50 via a contact plug 47A, a wiring 46B, a contact plug 47B, a wiring 46C, and a contact plug 47C.
  • the image sensor 101 of this embodiment detects charges due to photoelectric conversion. Specifically, the photoelectric conversion film 51 generates hole-electron pairs according to the intensity of incident light. One of the holes and electrons is detected as a signal charge. In this way, incident light on the photoelectric conversion film 51 is detected.
  • the capacitance of the photoelectric conversion film changes depending on the intensity of incident light. The change is detected. In this way, incident light on the photoelectric conversion film is detected.
  • An image sensor including such a photoelectric conversion film is disclosed in Patent Document 3, for example.
  • the insulating film 119 includes, for example, at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, an organic polymer material, and an inorganic polymer material.
  • the insulating film 119 may be transparent to light of a wavelength that the image sensor 101 should detect.
  • the insulating film 119 may have a single layer structure or a laminated structure.
  • the protective film 120 has insulating properties.
  • the protective film 120 includes, for example, at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, an organic polymer material, and an inorganic polymer material.
  • the protective film 120 may be transparent to light of a wavelength that the image sensor 101 should detect.
  • the composition of the material included in the protective film 120 and the composition of the material included in the insulating film 119 may be the same or different.
  • the protective film 120 may have a single layer structure or a laminated structure.
  • the image sensor 101 includes a photoelectric conversion film 51, an upper electrode 52, and a connection body 115.
  • the upper electrode 52 is located above the photoelectric conversion film 51.
  • the connecting body 115 supplies voltage to the upper electrode 52 by electrically connecting the upper electrode 52 to a connection destination.
  • Voltage control circuit 60 supplies voltage to upper electrode 52 via electrode signal line 16 including connection body 115 .
  • the connecting body 115 contacts the side surface 51s of the photoelectric conversion film 51. According to this configuration, the side surface 51s is unlikely to be exposed to the atmosphere, water, or the like.
  • the connection destination may be the control electrode 112.
  • the photoelectric conversion film 51 has a photoelectric conversion function. That the photoelectric conversion film 51 has a photoelectric conversion function means that at least a portion of the photoelectric conversion film 51 can perform photoelectric conversion.
  • the lower surface 52b of the upper electrode 52 may be in contact with the connecting body 115.
  • This configuration is advantageous from the viewpoint of increasing the contact area between the connecting body 115 and the upper electrode 52 and reducing the electrical resistance therebetween. This suppresses the delay when voltage is applied to the upper electrode 52, and can increase the isochronism of voltage changes.
  • the angle ⁇ 1 of the first taper 52p with respect to the vertical direction Dv is greater than 0° and smaller than 90°.
  • the angle ⁇ 1 is, for example, greater than 0° and less than or equal to 20 degrees, and may be greater than 0° and less than or equal to 10 degrees.
  • the insulating film 119z is a stacked film including a lower layer of aluminum oxide (ALO) and an upper layer of silicon oxynitride (SiON).
  • the upper electrode 52z includes indium tin oxide (ITO).
  • the photoelectric conversion film 51z contains an organic material.
  • the first etching gas contains a perfluoro compound (PFC), and specifically contains perfluoromethane (CF 4 ).
  • the second etching gas contains boron trichloride (BCl 3 ).
  • the third etching gas contains oxygen (O 2 ).
  • the upper end 651jsu of the side surface 651js of the upper layer 651j is located inside the lower end 651jsl.
  • the distance between the upper end 651jsu and the lower end 651jsl in the lateral direction Dh is defined as a first retreat distance Dr1.
  • the first retreat distance Dr1 is, for example, 5 nm or more and 40 nm or less, and may be 10 nm or more and 30 nm or less.
  • the photoelectric conversion film 651z has a laminated structure including a photoelectric conversion layer 51iz and an upper layer 651jz in this order from the bottom to the top.
  • the upper layer 651jz is later processed into an upper layer 651j.
  • the side surface of the photoelectric conversion film 651z and the side surface of the upper layer 651jz will be referred to as a side surface 651sz and a side surface 651jsz, respectively.
  • the side surface 651sz includes a side surface 51isz and a side surface 651jsz.
  • the photoelectric conversion film 651z includes a photoelectric conversion layer 51iz and an upper layer 651jz.
  • the upper layer 651jz is located above the photoelectric conversion layer 51iz.
  • the etching rate of the upper layer 651jz is higher than the etching rate of the photoelectric conversion layer 51iz.
  • the photoelectric conversion film 651 including the photoelectric conversion layer 51i and the upper layer 651j can be manufactured.
  • the binding energy of molecules in the material included in the upper layer 651jz may be smaller than the binding energy of molecules in the material included in the photoelectric conversion layer 51iz.
  • FIGS. 9A to 9E are partial cross-sectional views of an image sensor 701 according to the third embodiment.
  • the photoelectric conversion film 751 includes a photoelectric conversion layer 51i and a lower layer 751k.
  • the lower layer 751k is located below the photoelectric conversion layer 51i.
  • the side surface of the photoelectric conversion film 751 and the side surface of the lower layer 751k will be referred to as a side surface 751s and a side surface 751ks, respectively.
  • the side surface 751s includes a side surface 51is and a side surface 751ks.
  • the side surface 751ks of the lower layer 751k is located inside the reference straight line 660. Therefore, the side surface 751ks may be closer to the inside than the side surface 51is. Therefore, the edges of the photoelectric conversion film 751 tend to be rounded, and concentration of the electric field can be easily suppressed.
  • the side surface 751ks of the lower layer 751k includes a fifth taper 751kp that expands outward from the bottom to the top.
  • the angle ⁇ 5 of the fifth taper 751kp with respect to the vertical direction Dv is greater than 0° and smaller than 90°.
  • the angle ⁇ 5 is, for example, 25° or more and 65° or less, and may be 35° or more and 60° or less.
  • the second crack 115T2 may include at least one of the second gap 115S2 and the second low-density portion 115L2.
  • the connecting body 115 may be exposed in the second gap 115S2.
  • the second low density portion 115L2 may be sandwiched adjacent to the second two high density portions 115H2.
  • the second low density portion 115L2 may be a seam between the second two high density portions 115H2.
  • the density of the second low density portion 115L2 is lower than the density of the second two high density portions 115H2.
  • the second low-density portion 115L2 and the second two high-density portions 115H2 are portions included in the connecting body 115.
  • the second gap 115S2 includes the third portion P3, and the second low density portion 115L2 includes the fourth portion P4.
  • the side surface 751ks of the lower layer 751k is exposed in the second gap 115S2.
  • one of the second two high-density portions 115H2 is in contact with the side surface 51is of the photoelectric conversion layer 51i.
  • the second crack 115T2 When viewed three-dimensionally, in the image sensor according to this example, the second crack 115T2 extends in a band shape. In plan view, the second crack 115T2 extends along the side surface 51s of the photoelectric conversion film 51.
  • FIGS. 10A and 10B are explanatory diagrams of dry etching of the photoelectric conversion film 751 in Embodiment 3.
  • a method for manufacturing the image sensor 701 according to the third embodiment will be described with reference to FIGS. 10A and 10B.
  • the photoelectric conversion film 751z has a laminated structure including a lower layer 751kz and a photoelectric conversion layer 51iz in this order from the bottom to the top.
  • the lower layer 751kz is later processed into a lower layer 751k.
  • the side surface of the photoelectric conversion film 751z and the side surface of the lower layer 751kz will be referred to as a side surface 751sz and a side surface 751ksz, respectively.
  • the side surface 751sz includes a side surface 51isz and a side surface 751ksz.
  • the photoelectric conversion layer 51iz and the lower layer 751kz each contain an organic material.
  • the binding energy of molecules in the organic material included in the lower layer 751kz may be smaller than the binding energy of molecules in the organic material included in the photoelectric conversion layer 51iz.
  • a photoelectric conversion film 751 having the shape described with reference to FIGS. 9A and 9B can be obtained.
  • the photoelectric conversion film 751z whose side portion has been scraped by dry etching using the third etching gas may be the photoelectric conversion film 751.
  • the photoelectric conversion layer 51iz, the lower layer 751kz, the side surface 51isz, and the side surface 751ksz of the photoelectric conversion film 751z may be the photoelectric conversion layer 51i, the lower layer 751k, the side surface 51is, and the side surface 751ks of the photoelectric conversion film 751, respectively.
  • the second retreat distance Dr2 is larger than the first retreat distance Dr1.
  • the second retreat distance Dr2 may be the same as the first retreat distance Dr1, or may be smaller than the first retreat distance Dr1.
  • the angle ⁇ 5 may be larger, smaller, or the same as the angle ⁇ 4.
  • the photoelectric conversion layer 51iz, the upper layer 651jz, and the lower layer 751kz of the photoelectric conversion film 851z each contain an organic material.
  • the binding energy of molecules in the organic material included in the upper layer 651jz is smaller than the binding energy of molecules in the organic material included in the photoelectric conversion layer 51iz.
  • the binding energy of molecules in the organic material included in the lower layer 751kz is smaller than the binding energy of molecules in the organic material included in the photoelectric conversion layer 51iz.
  • a photoelectric conversion film 851 having the shape described with reference to FIGS. 11A and 11B can be obtained.
  • the imaging device of the present disclosure can be used in imaging devices for various uses.

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PCT/JP2023/004831 2022-03-17 2023-02-13 撮像素子、撮像装置及び撮像素子の製造方法 Ceased WO2023176245A1 (ja)

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JP2024507594A JPWO2023176245A1 (https=) 2022-03-17 2023-02-13
US18/822,525 US20240423004A1 (en) 2022-03-17 2024-09-03 Image sensor, imaging device, and method for manufacturing image sensor

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WO2025192315A1 (ja) * 2024-03-12 2025-09-18 パナソニックＩｐマネジメント株式会社 撮像装置およびカメラシステム

Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2018123907A1 (ja) * 2016-12-27 2018-07-05 シャープ株式会社 撮像パネル及びその製造方法
JP2019149542A (ja) * 2018-02-26 2019-09-05 パナソニックＩｐマネジメント株式会社 光電変換素子、およびその製造方法
WO2019239851A1 (ja) * 2018-06-14 2019-12-19 パナソニックＩｐマネジメント株式会社 制御電極と、透明電極と、前記制御電極と前記透明電極の側面とを電気的に接続する接続層と、を備えるイメージセンサ

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2018123907A1 (ja) * 2016-12-27 2018-07-05 シャープ株式会社 撮像パネル及びその製造方法
JP2019149542A (ja) * 2018-02-26 2019-09-05 パナソニックＩｐマネジメント株式会社 光電変換素子、およびその製造方法
WO2019239851A1 (ja) * 2018-06-14 2019-12-19 パナソニックＩｐマネジメント株式会社 制御電極と、透明電極と、前記制御電極と前記透明電極の側面とを電気的に接続する接続層と、を備えるイメージセンサ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025192315A1 (ja) * 2024-03-12 2025-09-18 パナソニックＩｐマネジメント株式会社 撮像装置およびカメラシステム

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