WO2023153236A1 - 半導体製造システム群への電力供給システム - Google Patents

半導体製造システム群への電力供給システム Download PDF

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Publication number
WO2023153236A1
WO2023153236A1 PCT/JP2023/002579 JP2023002579W WO2023153236A1 WO 2023153236 A1 WO2023153236 A1 WO 2023153236A1 JP 2023002579 W JP2023002579 W JP 2023002579W WO 2023153236 A1 WO2023153236 A1 WO 2023153236A1
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Prior art keywords
power
semiconductor manufacturing
power supply
manufacturing systems
distribution unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2023/002579
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English (en)
French (fr)
Japanese (ja)
Inventor
直樹 松本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020247029682A priority Critical patent/KR20240148380A/ko
Priority to CN202380020197.2A priority patent/CN118648086A/zh
Priority to JP2023580172A priority patent/JPWO2023153236A1/ja
Publication of WO2023153236A1 publication Critical patent/WO2023153236A1/ja
Priority to US18/605,837 priority patent/US20240222969A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R22/00—Arrangements for measuring time integral of electric power or current, e.g. electricity meters
    • G01R22/06—Arrangements for measuring time integral of electric power or current, e.g. electricity meters by electronic methods
    • G01R22/061—Details of electronic electricity meters
    • G01R22/063—Details of electronic electricity meters related to remote communication
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J3/00—Circuit arrangements for AC mains or AC distribution networks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J3/00—Circuit arrangements for AC mains or AC distribution networks
    • H02J3/38—Arrangements for feeding a single network from two or more generators or sources in parallel; Arrangements for feeding already energised networks from additional generators or sources in parallel
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H02J50/12—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/40—Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/80—Circuit arrangements or systems for wireless supply or distribution of electric power involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • the present disclosure relates to a power supply system for semiconductor manufacturing systems.
  • Patent Document 1 discloses a plasma processing apparatus that applies plasma processing to a substrate using high frequency waves.
  • the plasma processing apparatus has a power supply that supplies power to the process chamber and is powered through a cable.
  • the technology according to the present disclosure provides a power supply system for a group of semiconductor manufacturing systems capable of realizing efficient power operation by optimizing power distribution.
  • One aspect of the present disclosure is a power distribution unit, a plurality of power supply devices connected to the power distribution unit, and a plurality of semiconductor manufacturing systems, each semiconductor manufacturing system including a plurality of substrate processing chambers, the plurality of a power receiving device configured to wirelessly receive power from any one of the power feeding devices; and based on power usage in each of the plurality of semiconductor manufacturing systems, a control unit that controls the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems through the plurality of power supply devices.
  • FIG. 1 is a schematic diagram for explaining a configuration example of a power supply system according to an embodiment
  • FIG. It is a top view which shows the outline of a structure of a substrate processing system.
  • It is a side view which shows the outline of a structure of a substrate processing system.
  • 1 is a plan view showing an outline of an internal configuration of a coating and developing treatment system;
  • FIG. 1 is a side view showing an outline of an internal configuration of a coating and developing treatment system;
  • FIG. 1 is a side view showing an outline of an internal configuration of a coating and developing treatment system;
  • FIG. It is a schematic diagram for explaining a configuration example of a power supply system according to another embodiment.
  • processing steps In the manufacturing process of semiconductor devices, there are various processing steps in which the inside of a processing module containing a semiconductor substrate (hereinafter also simply referred to as "substrate") is decompressed and a predetermined processing is performed on the substrate. It is done. These processing steps are performed in a plurality of semiconductor manufacturing systems or a group of semiconductor manufacturing systems having such systems.
  • a group of semiconductor manufacturing systems has a configuration in which multiple semiconductor manufacturing systems coexist and operate within a clean room area.
  • power supply equipment may be provided for each of the plurality of systems, and power may be supplied individually. In that case, the operating rates of multiple systems are not equal, and some systems with high operating rates and others with low operating rates coexist.
  • a semiconductor manufacturing system and a group of semiconductor manufacturing systems equipped with it are provided with a power supply device as ancillary equipment in order to supply power to a plurality of units in the semiconductor manufacturing system.
  • a power supply device as ancillary equipment in order to supply power to a plurality of units in the semiconductor manufacturing system.
  • power is generally supplied from a power supply device using a cable.
  • the technology according to the present disclosure has been made in view of the above circumstances, and it is possible to realize efficient power operation by optimizing power distribution in a semiconductor manufacturing system and a semiconductor manufacturing system group including the same. to provide an efficient power supply system. Furthermore, the present invention provides a power supply system capable of reducing the device space and improving the degree of freedom of device arrangement.
  • FIG. 1 is a schematic diagram for explaining a configuration example of a power supply system S1 according to one embodiment.
  • the power supply system S1 includes a plurality of semiconductor manufacturing systems 1. In the vicinity of a plurality of semiconductor manufacturing systems 1, power supply devices 10 individually electrically connected to power cables 5 are installed.
  • the power cable 5 is connected to a power distribution unit 20 that distributes factory power (factory power supply, AC power supply source) and supplies power. Power is supplied.
  • a plurality of power supply devices 10 installed for each of a plurality of semiconductor manufacturing systems 1 are connected to a power distribution unit 20 via a common power cable 5 constructed as one power network.
  • the power from the power distribution unit 20 is appropriately distributed and supplied to the plurality of power supply devices 10 .
  • the semiconductor manufacturing system 1 has a power receiving device 30 (not shown in FIG. 1) to which power is transmitted from the power feeding device 10 in a contactless manner.
  • the semiconductor manufacturing system 1 is equipped with a smart meter 40 (not shown in FIG. 1) capable of measuring the power used in the system and transmitting the measured data.
  • the power flow to the power supply device 10 may be measured based on the data measured by the smart meter 40 and the power distribution to the plurality of power supply devices 10 may be adjusted.
  • the power distribution unit 20 is provided with a control section 50 capable of receiving measurement data transmitted from the smart meter 40 and controlling the power distribution unit 20 .
  • the control unit 50 may analyze the power flow to the plurality of power supply devices 10 .
  • the control unit 50 may be configured to include an autonomous distributed computer capable of analyzing power flow and optimizing power distribution.
  • FIG. 2 is a plan view showing the outline of the configuration of the substrate processing system 60.
  • FIG. 3 is a side view showing the outline of the configuration of the substrate processing system 60.
  • the module configuration of the substrate processing system 60 of the present disclosure is not limited to this, and may be selected according to the purpose of substrate processing.
  • the substrate processing system 60 has a configuration in which an atmosphere section 100 and a decompression section 101 are integrally connected via a load lock module 70 .
  • the load lock module 70 has a plurality of, for example, two load locks 71a and 71b along the width direction (X-axis direction) of the loader module 80, which will be described later.
  • the load locks 71a and 71b (hereinafter collectively referred to simply as "load locks 71" in some cases) connect the internal space of the loader module 80 (to be described later) of the air section 100 and the decompression section 101 via the substrate transfer port. is provided so as to communicate with the internal space of the transfer module 110, which will be described later.
  • the substrate transfer ports are configured to be openable and closable by gate valves 74 and 75, respectively.
  • the load lock 71 is configured to hold the substrate W temporarily. Further, the load lock 71 is configured so that the inside can be switched between an atmospheric atmosphere and a reduced-pressure atmosphere (vacuum state). In other words, the load lock module 70 is configured so that the substrate W can be transferred appropriately between the atmospheric part 100 having an atmospheric atmosphere and the decompression part 101 having a decompressed atmosphere.
  • the atmospheric part 100 has a loader module 80 equipped with a substrate transfer device 90, which will be described later, and a load port 82 on which a FOUP 81 capable of storing a plurality of substrates W is placed.
  • the loader module 80 may be provided with an orienter module (not shown) for adjusting the orientation of the substrate W in the rotational direction, a storage module (not shown) for storing a plurality of substrates W, and the like. good.
  • the loader module 80 has a rectangular housing inside, and the inside of the housing is maintained in an atmospheric atmosphere.
  • a plurality of, for example, four load ports 82 are arranged side by side on one side surface of the loader module 80 that constitutes the long side in the Y-axis negative direction.
  • the load locks 71a and 71b of the load lock module 70 are arranged side by side on the other side surface of the loader module 80, which constitutes the long side of the loader module 80 in the positive direction of the Y axis.
  • a substrate transfer device 90 for transferring the substrate W is provided inside the loader module 70 .
  • the substrate transfer device 90 has a transfer arm 91 that holds and moves the substrate W, a turntable 92 that rotatably supports the transfer arm 91, and a rotating table 93 on which the turntable 92 is mounted.
  • a guide rail 94 extending in the longitudinal direction (X-axis direction) of the loader module 80 is provided inside the loader module 80 .
  • the rotating table 93 is provided on a guide rail 94 , and the substrate transfer device 90 is configured to be movable along the guide rail 94 .
  • the decompression unit 101 has a transfer module 110 that internally transfers the substrate W, and a processing module (corresponding to the plasma processing apparatus 62) that subjects the substrate W transferred from the transfer module 110 to desired processing.
  • the insides of the transfer module 110 and the processing module are configured to be maintainable in a reduced-pressure atmosphere.
  • a plurality of, for example, six processing modules are connected to one transfer module 110 .
  • the number and arrangement of processing modules are not limited to those of this embodiment, and can be set arbitrarily.
  • a transfer module 110 as a vacuum transfer module is connected to the load lock module 70 .
  • the transfer module 110 transfers the substrate W loaded into the load lock 71 a of the load lock module 70 to one processing module, performs desired processing, and transfers the substrate W to the atmospheric part 100 through the load lock 71 b of the load lock module 70 .
  • transfer module 110 has a vacuum transfer space and an opening. The opening communicates with the vacuum transfer space.
  • a substrate transfer device 120 for transferring the substrate W is provided inside the transfer module 110 . That is, the substrate transfer device 120 is arranged within the vacuum transfer space of the vacuum transfer module.
  • the substrate transfer apparatus 120 has a transfer arm 121 that holds and moves the substrate W, a turntable 122 that rotatably supports the transfer arm 121, and a rotating table 123 on which the turntable 122 is mounted.
  • the rotating mounting table 123 is provided on a guide rail 125 extending in the longitudinal direction (Y-axis direction) of the transfer module 110 , and the substrate transfer device 120 is configured to be movable along the guide rail 125 .
  • the processing module (plasma processing device 62) performs plasma processing such as etching processing and film forming processing on the substrate W.
  • a module that performs processing according to the purpose of substrate processing can be selected.
  • the processing module communicates with the transfer module 110 through a substrate transfer port formed on the side wall of the transfer module 110, and the substrate transfer port is configured to be openable and closable using a gate valve 132.
  • Wireless power supply unit 140 includes a power reception unit 140 a provided on the substrate processing system 60 side and a power transmission unit 140 b provided outside the substrate processing system 60 .
  • power receiving unit 140a and power transmitting unit 140b are physically separated. The separation distance may be, for example, 40 mm or more.
  • the power receiving unit 140 a is provided inside the load lock module 70 below.
  • the power transmission unit 140b is provided below the power reception unit 140a on the floor or under the floor where the substrate processing system 60 is installed.
  • the power receiving unit 140a may be provided on the side of the substrate processing system 60 .
  • the power transmission section 140b may be provided at a position corresponding to the power reception section 140a on the side of the substrate processing system 60 .
  • the power receiving unit 140a is provided in the lower part of the load lock module 70, the configuration of the power receiving unit 140a is not limited to this.
  • a power receiving unit may be provided for each plasma processing apparatus 62 , and power may be distributed to each plasma processing apparatus 62 from one power receiving unit provided throughout the substrate processing system 60 .
  • a power receiving unit may be provided for each unit or member constituting the plasma processing apparatus 62, and power may be distributed to each unit.
  • the power receiving unit 140 a includes the power receiving device 30 and the power transmitting unit 140 b includes the power feeding device 10 .
  • the wireless power supply unit 140 AC power is supplied from the power distribution unit 20 to the power transmission unit 140b, and the AC power is transmitted from the power supply device 10 to the power reception device 30 by non-contact means such as magnetic field resonance. Then, the generated AC power is converted into DC power by conversion means such as an AC/DC converter (not shown), and the DC power is supplied. Also, in one embodiment, the generated AC power may be supplied as it is.
  • the substrate processing system 60 includes a smart meter 40 capable of measuring power consumption of the substrate processing system 60 as data and transmitting the measured data to the controller 50 .
  • the control unit 50 shown in FIG. 1 measures the flow of electric power to the power supply device 10 based on the measurement data transmitted from the smart meter 40, and based on the measurement result, the substrate processing system 60 (semiconductor manufacturing system 1) to adjust the distribution of power supply to;
  • the substrate processing system 60 described above is provided with a controller 150 as shown in FIG.
  • the control unit 150 is, for example, a computer having a CPU, memory, etc., and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling transport and processing of substrates W in the substrate processing system 60 .
  • the control unit 150 measures the flow of power to the power supply device 10 based on the data measured by the smart meter 40, and based on the measurement result, outputs the power to the substrate processing system 60. You may adjust the supply distribution of the electric power of.
  • the above program may be recorded in a computer-readable storage medium H and installed in the control unit 150 from the storage medium H, or may be obtained by communication and controlled. It may be one installed in the unit 150 .
  • the semiconductor manufacturing system 1 is not limited to the plasma processing system including the plasma processing apparatus described above, and may be a system that performs various substrate processing.
  • a coating and developing processing system 200 for forming a lower layer film and an intermediate layer film on a substrate W, forming a resist film, and developing the resist film after exposure processing will be described. do.
  • FIG. 4 is a plan view showing the outline of the internal configuration of the coating and developing treatment system 200.
  • FIG. 5 and 6 are side views showing the outline of the internal configuration of the coating and developing treatment system 200.
  • FIG. 4 is a plan view showing the outline of the internal configuration of the coating and developing treatment system 200.
  • the coating and developing system 200 includes a cassette station 202 into and out of which a cassette containing a plurality of substrates W is loaded and unloaded, and various processing apparatuses for performing unit processes constituting the coating and developing process. and a plurality of processing stations 203 .
  • the coating and developing system 200 has a configuration in which a cassette station 202, a processing station 203, and an interface station 205 for transferring substrates W between an exposure apparatus 204 adjacent to the processing station 203 are integrally connected. are doing.
  • the cassette station 202 is divided into, for example, a cassette loading/unloading section 210 and a substrate transport section 211 .
  • the cassette loading/unloading section 210 is provided at the end of the coating and developing treatment system 200 on the negative Y direction side (leftward direction in FIG. 1).
  • a cassette mounting table 212 is provided in the cassette loading/unloading section 210 .
  • a plurality of, for example, four mounting plates 213 are provided on the cassette mounting table 212 .
  • the mounting plates 213 are arranged in a row in the horizontal X direction (vertical direction in FIG. 1).
  • the cassette C can be placed on these placement plates 213 when the cassette C is carried into and out of the coating and developing treatment system 200 .
  • the substrate transfer unit 211 is provided with a substrate transfer device 221 which is movable on a transfer path 220 extending in the X direction as shown in FIG.
  • the substrate conveying device 221 is movable in the vertical direction and around the vertical axis (the direction of ⁇ ). A substrate W can be transported between them.
  • the processing station 203 is provided with a plurality of units, for example, first to fourth blocks G1, G2, G3, and G4, which are equipped with various devices.
  • a first block G1 is provided on the front side of the processing station 203 (positive side in the X direction in FIG. 4), and a second block G1 is provided on the back side of the processing station 203 (negative side in the X direction in FIG. 4).
  • a block G2 of is provided.
  • a third block G3 is provided on the cassette station 202 side of the processing station 203 (negative Y direction side in FIG. 4), and the interface station 205 side of the processing station 203 (positive Y direction side in FIG. 4). is provided with a fourth block G4.
  • the first block G1 is provided with liquid processing devices as processing devices.
  • liquid processing devices as processing devices.
  • FIG. Devices 233 are arranged in this order from the bottom.
  • the development processing device 230 performs a development processing in which the substrate W on which the resist film is formed is supplied with a developing solution after exposure and the substrate W is developed.
  • the lower layer film forming apparatus 231 performs the lower layer film forming process of supplying the coating liquid for forming the lower layer film onto the substrate W to form the lower layer film on the substrate W.
  • the lower layer film is, for example, an SoC (Spin On Carbon) film.
  • the intermediate layer film forming apparatus 232 performs an intermediate layer film forming process of supplying a coating liquid for forming an intermediate layer film onto the substrate W to form a lower layer film on the substrate W.
  • the intermediate layer film is, for example, a silicon-containing antireflection film (SiARC film).
  • the resist film forming device 233 performs a resist film forming process of supplying a resist liquid to the substrate W to form a resist film on the substrate W.
  • three development processing devices 230, lower layer film forming devices 231, intermediate layer film forming devices 232, and resist film forming devices 233 are arranged horizontally.
  • the number and arrangement of the development processing device 230, the lower layer film forming device 231, the intermediate layer film forming device 232 and the resist film forming device 233 can be arbitrarily selected.
  • the lower layer film forming device 231, the intermediate layer film forming device 232, and the resist film forming device 233 for example, spin coating of applying a predetermined processing liquid onto the substrate W is performed.
  • spin coating for example, the processing liquid is discharged onto the substrate W from a coating nozzle, and the substrate W is rotated to spread the processing liquid on the surface of the substrate W.
  • a fluid supply device (not shown) as a fluid supply unit may be provided in the vicinity of the intermediate layer film forming device 232 .
  • heat treatment apparatuses 240 for performing heat treatment such as heating and cooling of the substrate W are arranged vertically and horizontally.
  • Each of these heat treatment apparatuses 240 has a configuration in which a cooling process is performed immediately after performing a predetermined heat process on the substrate W.
  • a heat treatment apparatus includes, for example, a heat processing section having a hot plate for performing heat processing in a chamber, and a cooling section having a cooling plate also serving as a conveying member for transferring the substrate W between the hot plate and the cooling plate.
  • Side-by-side known heat treatment equipment is employed.
  • the number and arrangement of heat treatment apparatuses 240 can also be selected arbitrarily.
  • the heat treatment apparatus 240 includes one for heating an underlayer film, one for heating an intermediate layer film, and one for PAB processing.
  • the heat treatment device 240 for heating the underlayer film heats the substrate W on which the underlayer film is formed by the underlayer film forming device 231 to harden the underlayer film.
  • the heat treatment device 240 for heating the intermediate film the substrate W on which the lower layer film is formed by the intermediate film forming device 232 is heated to perform heat treatment for the lower layer film to harden the intermediate film.
  • the heat treatment device 240 for PAB processing the substrate W on which the resist film is formed by the resist film forming device 233 is heated before exposure to perform the PAB processing in which the resist film is cured.
  • a plurality of delivery devices 250 are provided in the third block G3, and inspection devices 251 and 252 are provided thereon.
  • a substrate transfer area D is formed in the area surrounded by the first block G1 to the fourth block G4.
  • a substrate transfer device 270 is arranged in the substrate transfer area D.
  • the substrate transfer device 270 has a transfer arm 270a that is movable in, for example, the Y direction, the front-rear direction, the ⁇ direction, and the vertical direction.
  • the substrate transport device 270 moves within the substrate transport area D and transports the substrate W to predetermined devices in the surrounding first block G1, second block G2, third block G3 and fourth block G4. can.
  • a plurality of substrate transfer devices 270 are arranged vertically, and the substrates W can be transferred to predetermined devices having approximately the same height in each of blocks G1 to G4.
  • a shuttle transport device 271 is provided for transporting the substrate W linearly between the third block G3 and the fourth block G4.
  • the shuttle transport device 271 is linearly movable, for example, in the Y direction in FIG.
  • the shuttle transport device 271 moves in the Y direction while supporting the substrate W, and transfers the substrate W between the delivery device 250 of the third block G3 and the delivery device 260 of the fourth block G4, which are approximately the same height. can be transported.
  • a substrate transfer device 272 is provided on the negative X direction side of the third block G3.
  • the substrate transfer device 272 has a transfer arm 272a that is movable in, for example, the front-rear direction, the ⁇ direction, and the vertical direction.
  • the substrate transfer device 272 moves up and down while supporting the substrate W, and can transfer the substrate W to each transfer device 250 in the third block G3.
  • a substrate transfer device 273 and a transfer device 274 are provided in the interface station 205 .
  • the substrate transfer device 273 has a transfer arm 273a movable in, for example, the Y direction, the ⁇ direction, and the vertical direction.
  • the substrate transfer device 273 supports the substrate W on, for example, a transfer arm 273a, and can transfer the substrate W to and from each transfer device 260, transfer device 274, and exposure device 204 in the fourth block G4.
  • the coating and developing treatment system 200 is provided with a film thickness measuring device K.
  • This film thickness measuring device K has a configuration for measuring the film thickness by irradiating, for example, a laser beam to the surface of the substrate W within the measurement container, and a known measuring device can be used.
  • the coating and developing system 200 is electrically connected to a wireless power supply unit 140 that supplies power to the coating and developing system 200 as a whole.
  • the wireless power supply section 140 includes a power receiving section 140a provided on the side of the coating and developing system 200 and a power transmitting section 140b provided outside the coating and developing system 200 .
  • power receiving unit 140a and power transmitting unit 140b are physically separated. The separation distance may be, for example, 40 mm or more.
  • the power receiving unit 140 a is provided inside and below the substrate transfer unit 211 .
  • the power transmission section 140b is provided below the power reception section 140a on the floor surface or under the floor where the coating and developing treatment system 200 is installed.
  • the power receiving unit 140a may be provided on the side of the coating and developing system 200 .
  • the power transmission section 140b may be provided at a position corresponding to the power reception section 140a on the side of the coating and developing treatment system 200 .
  • the power receiving unit 140a is provided inside and below the substrate transfer unit 211, the configuration of the power receiving unit 140a is not limited to this.
  • a power receiving section may be provided for each unit or member constituting the coating and developing system 200, and power is distributed from one power receiving section provided throughout the coating and developing system 200 to each unit or member. Also good.
  • the coating and developing system 200 includes a smart meter 40 capable of measuring the power consumption of the coating and developing system 200 as data and transmitting the measured data to the control unit 50 .
  • the control unit 50 shown in FIG. 1 measures the flow of power to the power supply device 10 based on the measurement data transmitted from the smart meter 40, and based on the measurement result, the coating and developing system 200 (semiconductor manufacturing system). Coordinating power distribution to system 1).
  • the coating and developing treatment system 200 described above is provided with a control section 300 as shown in FIG.
  • the control unit 300 is, for example, a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown).
  • the program storage unit stores programs for controlling various processes for substrates W in the coating and developing system 200 .
  • the control unit 300 measures the flow of electric power to the power supply device 10 based on the data measured by the smart meter 40, and based on the measurement result, the coating and developing system 200 You may adjust the supply distribution of the electric power to.
  • the program may be recorded in a computer-readable storage medium H and installed in the control unit 300 from the storage medium H. Further, the storage medium H may be temporary or non-temporary.
  • the power supply system S1 shown in FIG. 1 includes a substrate processing system 60 illustrated as an example of the semiconductor manufacturing system 1 with reference to FIGS. devices coexisting on the same power grid. Depending on the device, there are devices with a high operating rate and devices with a low operating rate, and it is not necessary to equally supply power to each device.
  • AC power is supplied from the power distribution unit 20 to the power supply device 10 for each device via the power cable 5 configured as a single power network.
  • the power supplied to each power supply device 10 is determined based on the data measured by the smart meter 40 provided in each device. For example, a power consumption prediction may be made from the power consumption data measured by the smart meter 40, and power may be supplied based on the prediction.
  • the power distribution unit 20 is provided with a control section 50 capable of receiving measurement results transmitted from the smart meter 40 and controlling the power distribution unit 20 . Measurement data transmitted from the smart meter 40 of each device is transmitted to the control unit 50, and the measurement data is analyzed. Based on this analysis, power supply distribution to a plurality of semiconductor manufacturing systems 1 coexisting in the power supply system S1 is adjusted. In one embodiment, the maximum effective power supplied from the power distribution unit 20 to each semiconductor manufacturing system 1 may be adjusted based on the usage status of the plurality of semiconductor manufacturing systems 1 . For example, power supply optimization may be performed such that power intended for an inactive device is sent to another active device.
  • control unit 50 predicts power consumption based on each substrate transfer schedule and processing schedule in the plurality of semiconductor manufacturing systems 1, and based on the predicted power consumption and the usage status of the plurality of semiconductor manufacturing systems 1, The maximum effective power supplied from the power distribution unit 20 to each semiconductor manufacturing system 1 may be adjusted.
  • the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems 1 may be adjusted without changing the power rating of the power distribution unit 20 .
  • the rated power of the power distribution unit 20 may be determined to be equal to the total rated power of the plurality of connected semiconductor manufacturing systems 1 .
  • the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems 1 may be smaller than the rated power of each semiconductor manufacturing system 1. As an example, it may be limited to less than 70% of the rated power of each semiconductor manufacturing system 1 . Also, in one embodiment, the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems 1 may be adjusted so as not to exceed the actual power used in each semiconductor manufacturing system 1 .
  • the actual power consumption may be a performance value based on measurement data transmitted from the smart meter 40, for example.
  • the rated power of the semiconductor manufacturing system 1 is determined by various factors. For example, the number of substrate processing chambers (corresponding to the plasma processing device 62, development processing device 230, lower layer film forming device 231, intermediate layer film forming device 232, resist film forming device 233) included in the semiconductor manufacturing system 1 may be determined based on
  • a plurality of semiconductor manufacturing systems 1 (that is, a group of semiconductor manufacturing systems ) is supplied with power.
  • Each semiconductor manufacturing system 1 is equipped with a smart meter 40 capable of measuring the power used in the system and transmitting the measured data, and power is supplied based on the measured data.
  • efficient power operation is realized by optimizing the power distribution.
  • the power utilization efficiency can be improved and power costs can be reduced.
  • the power cost can be reduced by sending the power for the device that is not in operation to another device that is in operation.
  • a power supply device 10 connected to the power cable 5 is installed in the vicinity of each semiconductor manufacturing system 1 .
  • the semiconductor manufacturing system 1 includes a power receiving device 30 to which power is transmitted from the power feeding device 10 in a contactless manner. That is, the power supply to each semiconductor manufacturing system 1 is performed wirelessly.
  • wiring for connection between the semiconductor manufacturing system 1 and the power distribution unit 20 and peripheral wiring can be reduced or eliminated. Therefore, it is possible to reduce the device space and improve the degree of freedom in device arrangement.
  • the semiconductor manufacturing system 1 may have a power storage unit that stores power from the power receiving device 30 .
  • the power storage unit may be, for example, a capacitor or a battery, and AC power from the power receiving device 30 is converted to DC power by conversion means such as a converter (not shown) and stored in the power storage unit.
  • the stored electric power is supplied to at least one element such as the semiconductor manufacturing system 1 that operates using the electric power and the units or members that constitute it, and is used to drive them.
  • the power cost can be further reduced. That is, by storing inexpensive electric power in the power storage unit during a specific time period (for example, nighttime) and using it to drive the semiconductor manufacturing system 1 and its constituent units or members, the electric power cost can be reduced. .
  • power is transmitted from the power supply device 10 to the power receiving device 30 in a non-contact manner, and power is supplied to each semiconductor manufacturing system 1 wirelessly.
  • the configuration according to the present disclosure is not limited to this.
  • power transmission from the power feeding device 10 to the power receiving device 30 may be performed by wire.
  • FIG. 7 is a schematic diagram for explaining a configuration example of a power supply system S2 according to another embodiment.
  • elements having substantially the same functional configuration as those described in the above embodiment are denoted by the same reference numerals, and redundant description may be omitted.
  • the power supply system S2 includes a plurality of semiconductor manufacturing systems 1, and includes at least one additional semiconductor manufacturing system 1a compared to the above embodiment.
  • a power feeding device 10 electrically connected to a power cable 5 is installed in the vicinity of each of the semiconductor manufacturing systems 1 and 1a.
  • the power cable 5 is connected to a power distribution unit 20 that distributes factory power (factory power supply, AC power supply source) and supplies power. Power is supplied.
  • the number of power supply devices 10 may be greater than the number of semiconductor manufacturing systems 1, 1a. As shown in FIG. 7, the power supply device 10 is installed for each of a plurality of semiconductor manufacturing systems 1 and 1a, and there may be power supply devices 10 that are not installed in the semiconductor manufacturing systems 1 and 1a. In such a configuration, the semiconductor manufacturing systems 1 and 1a may be configured to wirelessly receive power from any one of the plurality of power supply devices 10 via the power receiving device 30 . By increasing the number of power supply devices 10 in this manner, the movement of the semiconductor manufacturing systems 1 and 1a is facilitated, and the degree of freedom when changing the layout is improved.
  • the total maximum effective power supplied to each of the plurality of semiconductor manufacturing systems 1 and the additional semiconductor manufacturing system 1a may be less than the rated power of the power distribution unit 20.
  • the number of semiconductor manufacturing systems is added. For example, if the number of substrate processing chambers included in the semiconductor manufacturing systems 1 and 1a is 12 and the maximum usable power for each is "1", the maximum usable power for the semiconductor manufacturing systems 1 and 1a is "12". . Since the power supply system S1 includes four semiconductor manufacturing systems 1, the total maximum power consumption is "48". In this case, the rated power of the power distribution unit 20 is set to "48".
  • the power actually used by each substrate processing chamber is not necessarily the maximum.
  • the power used by each chamber may be "0.6".
  • the power consumption of the four semiconductor manufacturing systems 1 is "28.8", and even if two additional semiconductor manufacturing systems 1a are added, the total power consumption is "43.2". That is, even in the configuration including the additional semiconductor manufacturing system 1a (power supply system S2), the power consumption does not exceed the rated power "48" of the power distribution unit 20 in the initial configuration. Therefore, according to the power supply system S2 according to this embodiment, the semiconductor manufacturing system 1a can be added without changing the rated power of the existing equipment, and efficient power supply is realized.
  • a power distribution unit ; a plurality of feeding devices connected to the power distribution unit; a plurality of semiconductor manufacturing systems, each semiconductor manufacturing system including a plurality of substrate processing chambers and a power receiving device configured to wirelessly receive power from any one of the plurality of powering devices; a plurality of semiconductor manufacturing systems; adjusting the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems through the plurality of power supply devices, based on the power usage status of each of the plurality of semiconductor manufacturing systems.
  • a power supply system comprising: (2) The power supply system according to (1), wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems is adjusted without changing the rated power of the power distribution unit. (3) The power supply system according to (1) or (2), wherein the rated power of the power distribution unit is equal to the total rated power of each of the plurality of semiconductor manufacturing systems. (4) The power supply system according to any one of (1) to (3), wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems is smaller than the rated power of the semiconductor manufacturing system. (5) According to any one of (1) to (4), the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems is adjusted so as not to exceed the actual power used in the semiconductor manufacturing system. power supply system.
  • the additional semiconductor manufacturing system includes a plurality of additional substrate processing chambers and a power receiving device configured to wirelessly receive power from any one of the plurality of power feeding devices, (1)- The power supply system according to any one of (7).
  • the power supply system according to (8) wherein the total maximum effective power supplied to each of the plurality of semiconductor manufacturing systems and the additional semiconductor manufacturing system is less than the rated power of the power distribution unit.
  • the control unit Predicting power consumption in the semiconductor manufacturing system based on each substrate transfer schedule and/or processing schedule in the plurality of semiconductor manufacturing systems; Power is supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems via the plurality of power supply devices based on the predicted power consumption and the power usage status of each of the plurality of semiconductor manufacturing systems.
  • each of the plurality of semiconductor manufacturing systems has a power storage unit that stores power from the power receiving device;
  • a power supply system comprising: (18) a power distribution unit; a plurality of semiconductor manufacturing systems connected to the power distribution unit, each semiconductor manufacturing system including a plurality of substrate processing chambers; Control for controlling the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems based on the power usage status of each of the plurality of semiconductor manufacturing systems.
  • Department and A power supply system comprising:

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PCT/JP2023/002579 2022-02-10 2023-01-27 半導体製造システム群への電力供給システム Ceased WO2023153236A1 (ja)

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CN202380020197.2A CN118648086A (zh) 2022-02-10 2023-01-27 对半导体制造系统组供给电功率的电功率供给系统
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JP2013240246A (ja) * 2012-05-17 2013-11-28 Toshiba Corp 無線給電中継装置

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US7421601B2 (en) * 2006-02-17 2008-09-02 International Business Machines Corporation Method and system for controlling power in a chip through a power-performance monitor and control unit
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JP2013240246A (ja) * 2012-05-17 2013-11-28 Toshiba Corp 無線給電中継装置

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