WO2023145483A1 - Oscillateur piézoélectrique et dispositif d'oscillation piézoélectrique - Google Patents

Oscillateur piézoélectrique et dispositif d'oscillation piézoélectrique Download PDF

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Publication number
WO2023145483A1
WO2023145483A1 PCT/JP2023/000753 JP2023000753W WO2023145483A1 WO 2023145483 A1 WO2023145483 A1 WO 2023145483A1 JP 2023000753 W JP2023000753 W JP 2023000753W WO 2023145483 A1 WO2023145483 A1 WO 2023145483A1
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WIPO (PCT)
Prior art keywords
bonding
sealing
piezoelectric
plate
crystal
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PCT/JP2023/000753
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English (en)
Japanese (ja)
Inventor
弘晃 山下
裕基 岡前
幸輝 原田
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株式会社大真空
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Publication of WO2023145483A1 publication Critical patent/WO2023145483A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz

Definitions

  • the present invention relates to piezoelectric vibrators and piezoelectric vibrating devices.
  • Patent Document 1 discloses a piezoelectric oscillator in which a piezoelectric oscillator is arranged side by side in a recess of a package together with an IC containing an oscillation circuit and the like, and the package is hermetically sealed with a lid. It is
  • the piezoelectric vibrator accommodates the piezoelectric vibrating piece in a concave portion of a container, and the container is covered with a lid to hermetically seal the piezoelectric vibrating piece.
  • This piezoelectric vibrator is turned upside down, and is bonded to the concave portion of the package with the lid side of the container as the lower surface with an adhesive. and the IC are electrically connected by bonding wires.
  • Patent Document 1 the external connection terminals formed on the bottom surface of the container of the piezoelectric vibrator and the IC are electrically connected by bonding wires. Although there is a risk of damage to the container of the piezoelectric vibrator due to the pressing force applied to the container, Patent Document 1 does not particularly consider the connection of the piezoelectric vibrator with a bonding wire.
  • the present invention has been made in view of the above points, and an object of the present invention is to prevent the piezoelectric vibrator from being damaged when the piezoelectric vibrator is wire-bonded.
  • the present invention is configured as follows.
  • a piezoelectric vibrator according to the present invention has a piezoelectric vibrating plate having first and second excitation electrodes respectively formed on both main surfaces thereof, and a second vibrator bonded to each of the main surfaces of the piezoelectric vibrating plate.
  • a piezoelectric vibrator having second sealing plates, wherein the outer peripheral portions of the first and second sealing plates are respectively bonded to the outer peripheral portions of the two main surfaces of the piezoelectric vibration plate, and the The vibrating portion of the piezoelectric diaphragm including the first and second excitation electrodes is hermetically sealed, and the first and second excitation electrodes of the piezoelectric diaphragm are provided on the outer surface of the first sealing plate.
  • a bonding pad for wire bonding electrically connected to one of the excitation electrodes is formed, and a part of the outer peripheral portion of at least one of the first and second sealing plates and the piezoelectric A non-bonded region is provided in a part of the outer periphery of the diaphragm so as to face each other and is not bonded, and the bonding pads on the outer surface of the first sealing plate are formed so as to overlap the non-bonded region in a plan view.
  • the piezoelectric vibrator in which the first and second sealing plates are bonded to both main surfaces of the piezoelectric vibrating plate to hermetically seal the vibrating portion of the piezoelectric vibrating plate includes the first sealing plate.
  • a bonding pad for wire bonding is formed on the outer surface of the stop plate, and the bonding pad is in contact with the non-bonded area on the outer peripheral portion of at least one of the first and second sealing plates and the piezoelectric vibration in plan view. It is formed so as to overlap with the non-bonded region of the outer peripheral portion of the plate.
  • the non-bonded region on the outer periphery of at least one of the first and second sealing plates and the non-bonded region on the outer periphery of the piezoelectric diaphragm are regions that face each other and are not bonded.
  • a gap is formed between the non-bonded area of one sealing plate and the non-bonded area of the piezoelectric diaphragm.
  • wire bonding electrodes electrically connected to the first and second excitation electrodes of the piezoelectric vibration plate are provided as the bonding pads on the outer surface of the first sealing plate.
  • First and second bonding pads for are formed.
  • the first and second bonding pads for wire bonding electrically connected to the first and second excitation electrodes of the piezoelectric diaphragm are formed on the outer surface of the first sealing plate.
  • the first and second bonding pads are arranged so as to overlap, in a plan view, a non-bonded region on the outer periphery of at least one of the first and second sealing plates and a non-bonded region on the outer periphery of the piezoelectric diaphragm. Therefore, when a pressing force for connecting bonding wires is applied to the first and second bonding pads of the first sealing plate, the outer peripheral portion of the at least one sealing plate is not bonded.
  • the gap between the area and the non-bonded area on the outer periphery of the piezoelectric diaphragm allows the excessive pressing force to escape and relax the pressing force.
  • a first non-bonding area as the non-bonding area is formed on a part of the outer peripheral part of the first sealing plate and a part of the outer peripheral part of the piezoelectric vibration plate.
  • a second non-bonding region is provided as the non-bonding region in a part of the outer periphery of the second sealing plate and a part of the outer periphery of the piezoelectric diaphragm, respectively. The area and the second non-bonded area overlap in plan view.
  • the first non-bonding region which is a non-bonding region facing each other and not bonded
  • the second sealing plate are provided on the outer peripheral portion of the first sealing plate and the outer peripheral portion of the piezoelectric diaphragm, respectively.
  • the first gap formed between the first non-bonded region on the outer periphery of the first sealing plate and the first non-bonded region on the outer periphery of the piezoelectric diaphragm and the outer periphery of the second sealing plate In a plan view, the second non-bonded region of the portion overlaps with the second gap formed between the second non-bonded region of the outer peripheral portion of the piezoelectric diaphragm.
  • the part of the non-bonded region of the outer peripheral portion is the outer peripheral edge portion of at least one of the first and second sealing plates and the piezoelectric diaphragm. be.
  • the non-bonded regions provided on the outer peripheral portion of the sealing plate and the outer peripheral portion of the piezoelectric diaphragm are respectively provided on the outer peripheral edge portions of the sealing plate and the piezoelectric diaphragm. While wire bonding is performed at a position that overlaps the non-bonded area in plan view, the sealing plate and the piezoelectric diaphragm are firmly bonded on the inner peripheral side of the outer peripheral edge to airtightly seal the vibrating portion of the piezoelectric diaphragm. can do.
  • the piezoelectric diaphragm includes the vibrating portion formed in the central portion of the piezoelectric vibrating plate and the outer circumference of the piezoelectric vibrating plate so as to surround the vibrating portion. and an outer frame portion thicker than the vibrating portion. A portion of the outer peripheral portion of at least one of the first and second sealing plates and a portion of the outer frame portion of the outer peripheral portion of the piezoelectric vibration plate are bonded to the respective surfaces, and the non-bonded Each region is provided.
  • the non-bonding region overlapping the bonding pad on the outer surface of the first sealing plate in a plan view includes the outer peripheral portion of at least one of the first and second sealing plates and the outer surface of the piezoelectric diaphragm. Since the piezoelectric vibration plate is provided on each of the frame portions, the pressing force applied to connect the bonding wires to the bonding pads of the first sealing plate is applied not to the thin vibrating portion but to the thick vibrating portion that supports the vibrating portion. can be stably received by the outer frame of the
  • the outer frame portion of the piezoelectric diaphragm surrounds the vibrating portion with a space therebetween and is connected to the vibrating portion via a connecting portion.
  • the circumference of the vibrating portion in the central portion of the piezoelectric diaphragm is spaced apart from the outer frame portion except for the connecting portion, thereby reducing the stress transmitted to the vibrating portion via the outer frame portion. can do.
  • the bonding pads on the outer surface of the first sealing plate of the piezoelectric vibrator are located in the non-bonding area of the outer frame portion of the piezoelectric diaphragm in plan view. formed to overlap.
  • the bonding wires are connected to the bonding pads of the first sealing plate.
  • the thick outer frame portion of the piezoelectric diaphragm can stably receive the pressing force applied to the piezoelectric diaphragm.
  • the vibrating portion of the piezoelectric diaphragm is substantially rectangular in plan view
  • the outer frame portion of the piezoelectric diaphragm is substantially rectangular in plan view
  • the outer frame In the portion one side of the substantially rectangular shape on the inner peripheral side of the substantially rectangular annular shape is connected to the vibrating portion via the connecting portion, and the non-bonded region of the piezoelectric vibration plate is the one side of the substantially rectangular shape. is provided on the outer frame portion on the opposite side facing the .
  • the outer frame portion which is substantially rectangular in plan view, has one side of the substantially rectangular shape on the inner peripheral side that is connected to the vibrating portion in the central portion via the connecting portion, while the non-bonded region is the substantially rectangular shape. It is provided on the outer frame portion on the side opposite to the one side of the rectangle. Since the bonding pads formed on the outer surface of the first sealing plate overlap in plan view, the non-bonding region of the outer frame portion receives a pressing force for connecting the bonding wires.
  • the non-bonded area of the outer frame is provided not on the one side of the substantially rectangular shape connected to the vibrating portion via the connecting portion, but on the opposite side of the outer frame that is opposite to the one side.
  • the distance to the connecting portion is longer compared to when it is provided on the outer frame portion on the one side. As a result, it is possible to reduce the transmission of the pressing force for connecting the bonding wire applied to the non-bonded region of the outer frame to the vibrating portion via the connecting portion.
  • a piezoelectric vibration device includes the piezoelectric vibrator according to any one of (1) to (8) above, and a base on which the piezoelectric vibrator is mounted.
  • the piezoelectric vibrator has a bonding pad for wire bonding formed on the outer surface of the first sealing plate, and the bonding pad corresponds to the first sealing plate and the second sealing plate in plan view. Since it is formed so as to overlap the non-bonded region on the outer periphery of at least one of the sealing plates and the non-bonded region on the outer periphery of the piezoelectric vibration plate, the non-bonded region of the at least one sealing plate and the piezoelectric diaphragm are formed so as to overlap each other. A gap is formed between the diaphragm and the non-bonded area.
  • the gap between the at least one sealing plate and the piezoelectric vibration plate causes an excessive pressing force. can be released to relieve the pressing force, and damage to the piezoelectric vibrator can be prevented.
  • an electronic component is mounted on the base next to the piezoelectric vibrator.
  • the electronic component and the piezoelectric vibrator are arranged horizontally instead of being stacked, so that the height of the piezoelectric vibration device can be reduced.
  • the piezoelectric vibrator is electrically connected to the electronic component by wire-bonding the first and second bonding pads of the first sealing plate.
  • the second sealing plate of the piezoelectric vibrator is bonded to the base by a bonding material and mechanically held to the base, while the first and second bonding pads of the first sealing plate are connected to the wire. Bonding provides an electrical connection to electronic components.
  • the piezoelectric vibrator in which the first and second sealing plates are bonded to both main surfaces of the piezoelectric vibrating plate and hermetically seals the vibrating portion of the piezoelectric vibrating plate, is formed on the outer surface of the first sealing plate.
  • a bonding pad for wire bonding is formed, and this bonding pad is provided on the outer peripheral portion of at least one of the first and second sealing plates and the outer peripheral portion of the piezoelectric diaphragm in plan view. , overlying non-bonded regions that face each other and are not bonded.
  • the non-bonding region of the outer peripheral portion of the at least one sealing plate and the outer peripheral portion of the piezoelectric diaphragm are separated from each other.
  • the gap between the non-bonded area allows the excessive pressing force to escape and relieve the pressing force, thereby deforming the piezoelectric diaphragm and the first and second sealing plates during wire bonding. or prevent it from being damaged.
  • FIG. 1 is a schematic cross-sectional view of a crystal oscillator according to one embodiment of the present invention.
  • FIG. 2 is a schematic plan view of the crystal oscillator of FIG. 1 with the cover omitted.
  • FIG. 3 is a schematic cross-sectional view enlarging the crystal oscillator of FIG.
  • FIG. 4A is a schematic plan view showing one main surface side of the crystal diaphragm.
  • FIG. 4B is a schematic plan view showing the other principal surface side seen through from the one principal surface side of the crystal plate.
  • FIG. 5A is a schematic plan view showing one main surface side of the first sealing plate.
  • FIG. 5B is a schematic plan view showing the other main surface side seen through from one main surface side of the first sealing plate.
  • FIG. 5A is a schematic plan view showing one main surface side of the first sealing plate.
  • FIG. 5B is a schematic plan view showing the other main surface side seen through from one main surface side of the first sealing plate.
  • FIG. 6A is a schematic plan view showing one main surface side of the second sealing plate.
  • FIG. 6B is a schematic plan view showing the other main surface side seen through from one main surface side of the second sealing member.
  • FIG. 7 is a partial cross-sectional view of a corner portion of the crystal oscillator 3.
  • FIG. 8 is a schematic plan view of the base showing the application area of the adhesive for bonding the crystal oscillator.
  • FIG. 9 is a schematic side view of a crystal oscillator bonded to a base.
  • FIG. 10A is a diagram showing the frequency deviation of the crystal oscillator of the comparative example after heat treatment.
  • FIG. 10B is a diagram showing the frequency deviation of the crystal oscillator of this embodiment after heat treatment.
  • FIG. 11A is a schematic plan view showing one main surface side of a quartz plate according to another embodiment of the present invention.
  • FIG. 11B is a schematic plan view showing the other main surface side seen through from one main surface side of a quartz diaphragm according to another embodiment of the present invention.
  • FIG. 12A is a schematic plan view showing one main surface side of the first sealing plate that is bonded to the crystal plate of FIGS. 11A and 11B.
  • FIG. 12B is a schematic plan view showing the other principal surface seen through from one of the principal surfaces of the first sealing plate bonded to the crystal plate of FIGS. 11A and 11B.
  • FIG. 13A is a schematic plan view showing one main surface side of a second sealing plate that is bonded to the crystal plate of FIGS. 11A and 11B.
  • FIG. 13B is a schematic plan view showing the other principal surface seen through from one of the principal surfaces of the second sealing plate bonded to the crystal plate of FIGS. 11A and 11B.
  • FIG. 14A is a schematic plan view showing one main surface side of a quartz plate according to still another embodiment of the present invention.
  • FIG. 14B is a schematic plan view showing the other main surface side seen through from one main surface side of the quartz diaphragm according to still another embodiment of the present invention.
  • FIG. 15A is a schematic plan view showing one main surface side of the first sealing plate that is bonded to the crystal plate of FIGS. 14A and 14B.
  • FIG. 15B is a schematic plan view showing the other main surface side seen through from one main surface side of the first sealing plate bonded to the crystal plate of FIGS.
  • FIG. 16A is a schematic plan view showing one main surface side of a second sealing plate that is bonded to the crystal plate of FIGS. 14A and 14B.
  • FIG. 16B is a schematic plan view showing the other principal surface seen through from one of the principal surfaces of the second sealing plate bonded to the crystal plate of FIGS. 14A and 14B.
  • FIG. 17 is a schematic side view showing a state in which a crystal resonator according to another embodiment of the invention is bonded to a base.
  • 18 is a schematic plan view showing the other main surface side of the second sealing plate of the crystal oscillator of FIG. 17.
  • FIG. FIG. 19 is a schematic cross-sectional view of a thermostatic oven-type crystal oscillator according to another embodiment of the present invention.
  • a crystal oscillator is applied as a piezoelectric vibration device having a piezoelectric vibrator.
  • FIG. 1 is a schematic cross-sectional view of a crystal oscillator according to one embodiment of the present invention
  • FIG. 2 is a schematic plan view omitting a lid 5 as a lid body of the crystal oscillator of FIG.
  • the crystal oscillator 1 of this embodiment includes a base 2 having a recess, a crystal oscillator 3 as a piezoelectric oscillator according to the present invention mounted on the inner bottom surface of the recess of the base 2, and lateral and a lid 5 as a lid that is joined to the base 2 and forms an accommodation space 7 that accommodates the crystal oscillator 3 and the IC 4 together with the base 2 .
  • the base 2 includes a flat bottom plate portion 21 and a side wall portion 22 annularly formed on the outer periphery thereof.
  • the base 2 is made of a ceramic material such as alumina, and is formed by, for example, stacking two ceramic green sheets and integrally firing them into a concave shape with an open top.
  • a plurality of wiring patterns 8 for connecting the IC 4 are formed on the inner bottom surface of the base 2, as shown in FIG.
  • the IC 4 is rectangular in plan view and forms an oscillation circuit together with the crystal oscillator 3 .
  • a plurality of electrode pads connected to the wiring pattern 8 of the base 2 by bonding wires 9 are formed on the periphery of the upper surface of the IC 4 .
  • the lid 5 of the crystal oscillator 1 is joined to the periphery of the upper opening of the base 2 through a seal ring 6 by seam welding or the like, thereby airtightly sealing the storage space 7 in which the crystal oscillator 3 and the IC 4 are stored. Sealed.
  • This hermetic sealing is performed in a vacuum atmosphere or in an inert gas atmosphere such as nitrogen gas, and the housing space 7 is in the vacuum or inert gas atmosphere.
  • FIG. 3 is a schematic cross-sectional view enlarging the crystal oscillator 3 of FIG.
  • the crystal resonator 3 includes a crystal vibration plate 10 which is a piezoelectric vibration plate, a first sealing plate 11 covering one main surface side of the crystal vibration plate 10, and a second main surface side of the crystal vibration plate 10. and a second sealing plate 12 .
  • the first and second sealing plates 11 and 12 are bonded to both main surfaces of the crystal plate 10, respectively, to form a so-called sandwich structure package.
  • the package of this crystal oscillator 3 is a substantially rectangular parallelepiped, and is rectangular in plan view.
  • the package size of the crystal resonator 3 of this embodiment is, for example, 1.0 mm ⁇ 0.8 mm in plan view, and is intended for miniaturization and low profile.
  • the package size is not limited to the above, and different sizes are also applicable.
  • FIG. 4A is a schematic plan view showing one main surface side of the crystal plate 10
  • FIG. 4B is a schematic plan view showing the other main surface side of the crystal plate 10 seen through from one main surface side.
  • the crystal diaphragm 10 of this embodiment is an AT-cut crystal plate, and both principal surfaces thereof are XZ' planes.
  • the crystal diaphragm 10 is rectangular in plan view, and includes a substantially rectangular vibrating portion 15 in the center thereof, and a substantially rectangular annular outer frame portion 17 surrounding the vibrating portion 15 with an interval 16 formed of a through portion. and a connecting portion 18 that connects the vibrating portion 15 and the outer frame portion 17 .
  • substantially rectangular refers to a rectangular shape except for the area where the connecting portion 18 is formed. That is, the vibrating portion 15 is rectangular except for the connecting portion 18 on the outer peripheral side, and the annular outer frame portion 17 is rectangular ring-shaped except for the connecting portion 18 on the inner peripheral side.
  • the vibrating portion 15, the outer frame portion 17 and the connecting portion 18 are integrally formed.
  • the vibrating portion 15 and the connecting portion 18 are formed thinner than the outer frame portion 17 . That is, the outer frame portion 17 in the outer peripheral portion of the crystal plate 10 is thicker than the vibrating portion 15 in the central portion.
  • one side (the right side in FIGS. 4A and 4B ) of a substantially rectangular inner peripheral side of the outer frame portion 17 which is substantially rectangular and annular in plan view is connected to the vibrating portion 15 via the connecting portion 18 . ing.
  • the vibrating portion 15 is connected by the connecting portion 18 at one point in this way, the stress acting on the vibrating portion 15 can be reduced compared to a configuration in which the connecting portion 18 is connected at two or more points.
  • a pair of first and second excitation electrodes 19 and 20 are formed on both main surfaces of the vibrating portion 15 of the crystal diaphragm 10, respectively.
  • First and second extraction electrodes 21 and 22 are extracted from the first and second excitation electrodes 19 and 20, respectively.
  • a first lead-out electrode 21 on one main surface side of the crystal diaphragm 10 shown in FIG. 4A is led out to a partially circular connecting joint pattern 23 formed on the outer frame portion 17 via the connecting portion 18 .
  • a vibration-side first sealing bonding pattern 25 for bonding the crystal diaphragm 10 to the first sealing plate 11 is formed as an annular outer frame surrounding the vibration part 15 . It is formed in an annular shape over the entire circumference of the portion 17 .
  • the bonding pattern 25 for vibration-side first sealing extending along one short side (right side in FIG. 4A) of the crystal plate 10, which is rectangular in plan view, extends along the short side on the other side (left side in FIG. 4A).
  • the width of the connecting pattern 25 for vibration-side first sealing is partially narrower than that of the extending bonding pattern 25 for vibration-side sealing. are formed.
  • the vicinity of each corner of both ends of the one short side of the vibration-side first sealing bonding pattern 25 is formed such that the outer peripheral side is recessed in an arc shape toward the inner peripheral side.
  • the corners expose the surface of the crystal plate and form non-bonding regions 10 a , 10 a that are not bonded to the first sealing plate 11 .
  • the outer frame portion 17 having a substantially rectangular annular shape in a plan view is connected to the vibrating portion 15 via the connecting portion 18 at one side of the substantially rectangular shape on the inner peripheral side (the right side in FIGS. 4A and 4B) as described above. ing.
  • the non-bonded regions 10a, 10a are provided on the substantially rectangular outer frame portion 17 on one side of the substantially rectangular annular outer frame portion 17. As shown in FIG.
  • the vicinity of one corner on the inner peripheral side of the vibration side first sealing bonding pattern 25 extending along the short side of the other side of the crystal plate 10 is recessed toward the outer peripheral side in a partially circular shape. , a circular joint pattern 29 for connection is formed in this recessed portion.
  • connection bonding pattern 24 is formed in a substantially oval shape extending along the short side of the crystal diaphragm 10 so as to overlap the connection bonding pattern 27 on one main surface of the crystal diaphragm 10 in plan view.
  • a vibration-side second sealing bonding pattern 26 for bonding the crystal diaphragm 10 to the second sealing plate 12 is formed on an outer surface of a substantially rectangular ring surrounding the vibration part 15 . It is formed in an annular shape over the entire circumference of the frame portion 17 .
  • the second vibration-side sealing bonding pattern 26 is formed along the short side on one side (the right side in FIG. 4B) of the crystal diaphragm 10, similarly to the first vibration-side sealing bonding pattern 25 on one main surface. A part of the width of the portion extending along the length is formed narrow.
  • the bonding bonding pattern 23 for connection on one main surface of the crystal plate 10 is connected in plan view.
  • Circular connection bonding patterns 28 are formed so as to overlap with each other.
  • the vicinity of each corner of both ends of one short side of the second vibration-side sealing bonding pattern 26 is formed such that the outer peripheral side is recessed in an arc shape toward the inner peripheral side.
  • the corners are non-bonded areas 10b, 10b where the surface of the crystal plate is exposed and not bonded to the second sealing plate 12.
  • the non-joint areas 10b, 10b are provided on one side of the outer frame portion 17 which is connected to the vibrating portion 15 via the connecting portion 18 in the outer frame portion 17 having a substantially rectangular annular shape in plan view.
  • connection bonding pattern 30 is formed so as to overlap the connection bonding pattern 29 on the main surface in plan view.
  • the first through electrodes 31 penetrating between the two principal surfaces are composed of an oval connection bonding pattern 27 on one of the principal surfaces and a substantially oval connection bonding pattern 24 on the other principal surface. is formed at the end on the connecting portion 18 side of the region where the two overlap in plan view.
  • the first through electrode 31 is formed by coating the inner wall surface of the through hole with a metal film.
  • the first through electrode 31 electrically connects the connection bonding pattern 27 on one main surface of the crystal diaphragm 10 and the connection bonding pattern 24 on the other main surface of the crystal diaphragm 10 . Since the connecting joint pattern 24 on the other main surface is electrically connected to the second excitation electrode 20 as shown in FIG. It is electrically connected to the second excitation electrode 20 via the electrode 31 .
  • First and second excitation electrodes 19 and 20, first and second extraction electrodes 21 and 22, vibration side first and second sealing bonding patterns 25 and 26, and connecting bonding pattern 23 of the crystal plate 10 , 24, 27, 28, 29, and 30 are formed by stacking, for example, Au on an underlying layer made of, for example, Ti or Cr.
  • FIG. 5A is a schematic plan view showing one main surface side of the first sealing plate 11, and FIG. 5B is a schematic plane showing the other main surface side seen through from one main surface side of the first sealing plate 11.
  • FIG. It is a diagram.
  • the first sealing plate 11 is a rectangular parallelepiped substrate made of an AT-cut crystal plate similar to the crystal plate 10 .
  • a bonding pattern 25 for bonding vibration-side first sealing on one main surface of the crystal plate 10 is provided for sealing. is formed in an annular shape over the entire circumference of the first sealing plate 11 which is rectangular in plan view.
  • a portion extending along the short side on one side (the right side in FIG. 5B) of the sealing-side first bonding pattern 33 for sealing has a portion formed to have a narrow width, and the width is narrower than the narrow portion.
  • An oval connecting joint pattern 34 extending along the short side is formed on the inside.
  • This connection bonding pattern 34 is bonded to the oblong connection bonding pattern 27 on one main surface of the crystal plate 10 shown in FIG. 4A.
  • the vicinity of each corner of both ends of one short side of the sealing-side first bonding pattern 33 for sealing is formed such that the outer peripheral side is recessed toward the inner peripheral side in an arc shape.
  • Each of the corners exposes the surface of the crystal plate, faces the non-bonded regions 10a, 10a on one main surface of the crystal plate 10, and has a non-bonded region 11a that is not bonded to the crystal plate 10. , 11a.
  • connection bonding pattern 35 is formed.
  • the connection joint pattern 35 is connected to a partially circular connection joint pattern 37 via a connection wiring pattern 36 extending along the long side of the first sealing plate 11 .
  • This connection bonding pattern 37 is bonded to the circular connection bonding pattern 29 of the crystal plate 10 shown in FIG. 4A.
  • first sealing plate 11 shown in FIG. 5A serves as the upper surface of the crystal resonator 3.
  • Rectangular first and second external electrode terminals 40 and 41 are formed at a pair of opposing corners on one main surface, and the first external electrode terminal 40 has a rectangular part It extends to one short side (the right side in FIG. 5A) along the long side of the first sealing plate 11 . That is, the extending portion of the first external electrode terminal 40 and the second external electrode terminal 41 are positioned at both ends of the same short side.
  • the corner portions at both ends of the one short side of the first and second external electrode terminals 40 and 41 are connected to the first and second bonding pads 40a and 41a for wire bonding, which are positions to which bonding wires are connected. It's becoming The first and second bonding pads 40a and 41a form sealing-side first sealing joint patterns 33 at corners of both ends of one short side of the other main surface of the first sealing plate 11. It overlaps with the non-joining area
  • the first sealing plate 11 is formed with second and third through electrodes 38 and 39 penetrating between both main surfaces.
  • Each of the through electrodes 38 and 39 is configured by coating the inner wall surface of the through hole with a metal film.
  • the second through electrode 38 is formed in a region where the second external electrode terminal 41 on one main surface and the oval connection bonding pattern 34 on the other main surface overlap in plan view.
  • the second through electrode 38 electrically connects the second external electrode terminal 41 on one main surface of the first sealing plate 11 and the connection bonding pattern 34 on the other main surface of the first sealing plate 11 . Connecting.
  • connection bonding pattern 34 is bonded and electrically connected to the oval connection bonding pattern 27 on one main surface of the crystal plate 10 shown in FIG. 4A.
  • 27 is electrically connected to the second excitation electrode 20 via the first through electrode 31 of the crystal plate 10 and the connection bonding pattern 24 as described above.
  • the second external electrode terminal 41 of the first sealing plate 11 includes the second through electrode 38, the connection bonding pattern 34, the connection bonding pattern 27 of the crystal plate 10, the first through electrode 31, and the connection bonding pattern. It is electrically connected to the second excitation electrode 20 of the crystal diaphragm 10 via 24 .
  • the third through electrode 39 is formed in a region where the first external electrode terminal 40 on one main surface and the connection bonding pattern 37 on the other main surface overlap in plan view.
  • the third through electrode 39 electrically connects the first external electrode terminal 40 on one main surface of the first sealing plate 11 and the connection bonding pattern 37 on the other main surface of the first sealing plate 11 . Connecting.
  • connection bonding pattern 37 is electrically connected to the connection bonding pattern 35 via the connection wiring pattern 36, as shown in FIG. 5B.
  • the connection bonding pattern 35 is bonded and electrically connected to the connection bonding pattern 23 on one main surface of the crystal diaphragm 10 shown in FIG. 4A as described above. 23 is electrically connected to the first excitation electrode 19 of the crystal diaphragm 10 .
  • the first external electrode terminal 40 of the first sealing plate 11 includes the third through electrode 39 , the connection bonding pattern 37 , the connection wiring pattern 36 , the connection bonding pattern 35 , and the connection bonding of the crystal plate 10 . It is electrically connected to the first excitation electrode 19 of the crystal plate 10 via the pattern 23 .
  • the sealing-side first sealing bonding pattern 33, connecting bonding patterns 34, 35, 37, and connecting wiring pattern 36 of the first sealing plate 11 are formed, for example, on a base layer made of Ti or Cr, for example, Au is laminated and formed.
  • FIG. 6A is a schematic plan view showing one main surface side of the second sealing plate 12, and FIG. 6B is a schematic plane showing the other main surface side seen through from one main surface side of the second sealing plate 12.
  • FIG. It is a diagram.
  • the second sealing plate 12 is a rectangular parallelepiped substrate made of an AT-cut crystal plate similar to the crystal plate 10 and the first sealing plate 11 .
  • a portion extending along the short side on one side (the right side in FIG. 6A) of the sealing-side second sealing bonding pattern 45 has a portion formed with a narrow width, and the width is smaller than the narrow portion.
  • An oval connecting joint pattern 46 extending along the short side is formed on the inside.
  • This connection bonding pattern 46 is bonded to the oval connection bonding pattern 24 on the other main surface of the crystal plate 10 shown in FIG. 4B.
  • the vicinity of each corner of both ends of the short side on the one side of the sealing-side second sealing bonding pattern 45 is formed such that the outer peripheral side is recessed in an arc shape toward the inner peripheral side.
  • Each of the corners exposes the surface of the crystal plate, faces the non-bonded regions 10b, 10b on the other main surface of the crystal plate 10, and has a non-bonded region 12b that is not bonded to the crystal plate 10. , 12b.
  • the small circular connection bonding pattern 28 and the large circular connection bonding pattern 30 on the other main surface of the crystal diaphragm 10 shown in FIG. A small circular joint pattern 47 for connection and a large circular joint pattern 48 for connection to be jointed respectively are formed.
  • the sealing-side second sealing bonding pattern 45 and connecting bonding patterns 46, 47, and 48 of the second sealing plate 12 are formed by laminating, for example, Au on a base layer made of, for example, Ti or Cr. It is configured.
  • the crystal oscillation plate 10 and the first sealing plate 11 form the bonding pattern 25 for the vibration side first sealing and the sealing.
  • Diffusion bonding is performed in a state where the bonding pattern 33 for the first sealing on the stopping side is superimposed, and the crystal plate 10 and the second sealing plate 12 are bonded to the bonding pattern 26 for the second sealing on the vibration side and the second sealing on the sealing side.
  • Diffusion bonding is performed in a state in which the bonding patterns 45 for sealing are overlapped to form a package having a sandwich structure.
  • the accommodation space of the vibrating portion 15 is airtightly sealed without using a special bonding material such as an adhesive.
  • the bonding pattern 25 for the first sealing on the vibration side and the bonding pattern 33 for the first sealing on the sealing side themselves become the bonding material 43a generated after the diffusion bonding, and the second vibration side sealing.
  • the sealing bonding pattern 26 and the sealing-side second sealing bonding pattern 45 themselves become the bonding material 43b generated after the diffusion bonding.
  • connection bonding patterns for connection are also overlapped and diffusion bonded. Specifically, the connection bonding patterns 23, 27, and 29 of the crystal plate 10 and the connection bonding patterns 35, 34, and 37 of the first sealing plate 11 are diffusion-bonded. Then, the connection bonding patterns 23, 27, 29 and the connection bonding patterns 35, 34, 37 themselves become the bonding material 44a generated after the diffusion bonding.
  • connection bonding patterns 24, 28, 30 of the crystal diaphragm 10 and the connection bonding patterns 46, 47, 48 of the second sealing plate 12 are diffusion bonded. Then, the connection bonding patterns 24, 28, 30 and the connection bonding patterns 46, 47, 48 themselves become the bonding material 44b generated after the diffusion bonding.
  • the package-structured crystal resonator 3 containing the vibrating portion 15 is obtained.
  • it is thinner (lower in height) than crystal resonators with a package structure in which a crystal resonator element is housed in a box-shaped ceramic container having a concave portion serving as a housing space, and a lid is joined to hermetically seal it. conversion) can be achieved.
  • the crystal resonator 3 is formed by bonding the second sealing plate 12, which is the lower surface side of the first and second sealing plates 11 and 12, to the inner bottom surface of the base 2 with an adhesive. , is mounted on the base 2 .
  • the first and second bonding pads 40a and 41a of the first and second external electrode terminals 40 and 41 of the first sealing plate 11, which is the upper surface side of the crystal oscillator 3, are arranged as shown in FIGS. It is connected to two electrode pads of IC 4 by bonding wires 13 .
  • FIG. 7 is a partial cross-sectional view of a corner portion of the crystal oscillator 3, and is a cross-sectional view of the vicinity of the second bonding pads 41a shown in FIG. 5A as seen from the direction of arrows AA.
  • FIG. 7 shows the vicinity of the second bonding pads 41a of the crystal oscillator 3
  • the configuration of the vicinity of the first bonding pads 40a is the same.
  • the first and second bonding pads 40a and 41a of the first and second external electrode terminals 40 and 41 of the first sealing plate 11 of the crystal oscillator 3 are connected by the bonding wires 13 as described above. Although it is connected to two electrode pads of the IC 4, the connection position of the first sealing plate 11 by the bonding wire 13 is one of the crystal diaphragm 10 and the first and second sealing plates 11 and 12 in plan view. 11a; 12b at the corners of both ends of the short sides of the side.
  • the non-bonded regions 10a, 10b; 11a This is the portion where the surface of the crystal plate is exposed.
  • each non-bonding region 11a on the other main surface of the first sealing plate 11 and each non-bonding region 10a on one main surface of the crystal plate 10 are opposed to each other and are not bonded. is.
  • each non-bonding region 10b on the other main surface of the crystal diaphragm 10 and each non-bonding region 12b on one main surface of the second sealing plate 12 face each other and are not bonded to each other. It is a non-bonded area.
  • the first non-bonding regions 11a and 10a of the first sealing plate 11 and the crystal plate 10 and the second non-bonding regions 10b and 12b of the crystal plate 10 and the second sealing plate 12 overlap in plan view.
  • the first and second bonding pads 40a and 41a on one main surface of the first sealing plate 10 overlap these first and second non-bonding regions 11a and 10a; 10b and 12b in plan view.
  • each non-bonding region 11a of the first sealing plate 11 and each non-bonding region 10a of the crystal diaphragm 10, which are the first non-bonding regions, are regions that face each other and are not bonded, is formed with a first gap G1 as shown in FIG.
  • a second gap G2 is formed between each non-bonding region 10b of the crystal diaphragm 10 and each non-bonding region 12b of the second sealing plate 12, which are second non-bonding regions.
  • the size range of these gaps G1 and G2 is preferably a size range in which the stress can be relieved without deteriorating the bondability of wire bonding.
  • a dimension of 1000 nm or less is preferable, and about 200 nm to 700 nm is more preferable.
  • the first and second bonding pads 40a and 41a are connected to the first non-bonding regions 11a and 10a with the first gap G1 between the first sealing plate 11 and the crystal vibration plate 10, and the crystal vibration plate. They are located in regions that overlap the second non-bonding regions 10b and 12b, which have the second gap G2 between the plate 10 and the second sealing plate 12, in a plan view.
  • the first and second bonding pads are positioned in areas where the first and second sealing plates 11 and 12 and the crystal plate 10 are completely bonded by the bonding pattern for sealing and there is no gap.
  • the second gaps G1 and G2 can be used to escape and alleviate the problem. As a result, it is possible to prevent the crystal plate 10 and the first and second sealing plates 11 and 12 from being deformed or damaged such as cracks during wire bonding.
  • the first non-bonding region 11a of the first sealing plate 11 and the first non-bonding region 10a of the crystal plate 10 were not formed with a bonding pattern (metal film), Even if a bonding pattern is formed in the first non-bonding region of either the plate 11 or the quartz plate 10, the first non-bonding region of the first sealing plate 11 and the first non-bonding region of the crystal oscillator 10 are not connected. Since a gap can be secured between them, the bonding pattern may be formed in the first non-bonding region of either the first sealing plate 11 or the crystal plate 10 .
  • a bonding pattern may be formed in the second non-bonding region of either the crystal plate 10 or the second sealing plate 12 .
  • the size of the first sealing plate 11 is small, that is, even if the size of the crystal oscillator 3 is reduced, stable wire bonding is possible.
  • Electrode pads other than the two electrode pads of the IC 4 which are wire-bonded to the first and second bonding pads 40a and 41a of the crystal oscillator 3 are connected to the wiring pattern 8 of the base 2 by bonding wires 9 as described above. connected respectively.
  • the IC 4 connects a plurality of external connection terminals such as a power supply terminal, an output terminal, a control terminal, and a GND terminal (not shown) on the outer bottom surface of the base 2 via the internal wiring of the base 2, that is, the mounting of the crystal oscillator 1. are electrically connected to a plurality of external connection terminals for
  • Au is preferable from the viewpoint of reliability, but Cu or the like may also be used.
  • the crystal oscillator 3 and the IC 4 are electrically connected by wire bonding, compared to a configuration in which the crystal oscillator 3 and the IC 4 are electrically connected via a wiring pattern or the like formed on the base 2, A stray capacitance can be reduced, and deterioration of characteristics due to the stray capacitance can be suppressed.
  • the vibrating portion 15 of the crystal plate 10 of the crystal oscillator 3 is hermetically sealed by the first and second sealing plates 11 and 12, and the crystal oscillator 3 is mounted on the base 2.
  • the lid 5 airtightly seals, the vibrating portion 15 of the crystal plate 10 is double airtightly sealed. This makes it possible to suppress frequency fluctuations due to secular change over a long period of time.
  • the crystal oscillator 3 is bonded to the inner bottom surface of the base 2 with an adhesive as described above. Thermal stress generated by heat treatment such as reflow treatment is applied to the crystal oscillator 3 and adversely affects the stability of the frequency.
  • the following measures are taken to suppress the frequency from fluctuating due to thermal stress caused by heat treatment such as reflow treatment.
  • the adhesive that joins the second sealing plate 12 of the crystal oscillator 3 and the inner bottom surface of the base 2 is indicated by an imaginary line that is substantially rectangular in plan view. is applied to the circular central region S of the second sealing plate 12 .
  • the central region S of the second sealing plate 12 of this embodiment vibrates in a rectangular shape in plan view from the center O of the crystal plate 10 (or vibrating portion 15), which is rectangular in plan view and is joined to the second sealing plate 12. It is a circular area in plan view that substantially covers the portion 15 .
  • the circular central region S is a region that overlaps with the vibrating portion 15 in the central portion of the crystal plate 10 in plan view.
  • This central region S is preferably a region covering the first and second excitation electrodes 19 and 20 of the vibrating portion 15 of the crystal plate 10 in a plan view, and more preferably, the vibrating portion 15 of the crystal plate 10. is the area covering the
  • a paste-like adhesive in this embodiment, a conductive adhesive, for example, a polyimide-based, epoxy-based, or silicone-based conductive adhesive, is applied to the circular central region S of the inner bottom surface of the base 2, A crystal oscillator 3 is placed thereon, and the conductive adhesive is cured. Thereby, the crystal oscillator 3 is mechanically held on the base 2 .
  • the adhesive is not limited to a conductive adhesive, and may be a non-conductive adhesive.
  • a shield layer can be formed, and noise and the like can be shielded.
  • the crystal oscillator 3 is bonded to the base 2 with the adhesive at the circular central region S of the second sealing plate 12, so that the crystal oscillator 3 is not deformed as shown in the schematic side view of FIG.
  • the outer peripheral region around the central region S where the second sealing plate 12 is bonded to the inner bottom surface of the base 2 with the adhesive 50 there is a gap between the lower surface of the second sealing plate 12 and the inner bottom surface of the base 2 .
  • a gap G3 is formed.
  • the outer peripheral region where the gap G3 of the second sealing plate 12 is formed overlaps the outer frame portion 17 of the outer peripheral portion of the crystal plate 10 in plan view.
  • the outer frame portion 17 of the outer peripheral portion of the crystal plate 10 is formed so that the outer peripheral portions of the first and second sealing plates 11 and 12 are connected to the vibration side first and second sealing bonding patterns 25 and 26 as described above. and sealing-side first and second sealing bonding patterns 33, 45, etc., respectively.
  • the crystal plate 3 joins the circular central region S of the second sealing plate 12 to the base 2 with the adhesive 50, so that the central region S is restrained and supported by the adhesive 50. Therefore, thermal stress caused by heat treatment such as reflow treatment is applied to the central region S of the second sealing plate 12 bound by the adhesive 50 .
  • the central region S of the second sealing plate 12 is a region that overlaps with the vibrating portion 15 in the central portion of the crystal plate 10 in a plan view. Between the central region S of the second sealing plate 12 and the vibrating portion 15 of the crystal plate 10, as shown in FIG. Since there is a space corresponding to the thickness difference with the portion 17 , the thermal stress applied to the central region S of the second sealing plate 12 is not directly transmitted to the vibrating portion 15 of the crystal plate 10 .
  • the thermal stress applied to the central region S of the second sealing plate 12 is first transmitted to the outer peripheral portion of the second sealing plate 12, and furthermore, the crystal vibrating crystal bonded to the outer peripheral portion of the second sealing plate 12.
  • the vibration is transmitted to the outer frame portion 17 of the plate 10 and transmitted to the vibrating portion 15 supported by the outer frame portion 17 via the connecting portion 18 .
  • the crystal oscillator 3 is bonded to the base 2 at the outer peripheral portion of the second sealing plate 12, so the thermal stress caused by heat treatment such as reflow treatment is constrained by the adhesive. It joins the outer peripheral portion of the second sealing plate 12 . Since the outer frame portion 17 of the crystal plate 10 is bonded to the outer peripheral portion of the second sealing plate 12 , the thermal stress applied to the outer peripheral portion of the second sealing plate 12 is The vibration is transmitted to the frame portion 17 and applied to the vibrating portion 15 which is connected to the outer frame portion 17 via the connecting portion 18 .
  • the thermal stress applied to the outer peripheral portion of the second sealing plate 12 is greater than the thermal stress applied to the central region S of the second sealing plate 12, thereby increasing the vibrating portion in the central portion of the crystal plate 10. 15, and adversely affects the vibrating portion 15.
  • the outer peripheral portion of the second sealing plate 12 and the entire surface of the second sealing plate 12 are bonded. is bonded to the base 2 with an adhesive 50, the effect of thermal stress generated by heat treatment such as reflow treatment on the vibrating portion 15 of the crystal diaphragm 10 can be reduced, and the frequency can be reduced. Fluctuations can be suppressed.
  • the inventor conducted a test to verify the effect of bonding the crystal oscillator 3 to the base 2 with the adhesive 50 on the frequency fluctuation of the crystal oscillator 3 .
  • the crystal oscillator 1 of this embodiment in which the circular central region S of the second sealing plate 12 was bonded to the base 2 with the adhesive 50 as described above, and the circular central region of the second sealing plate 12
  • the four corners of the second sealing plate 12, which is rectangular in plan view, are bonded to the base 2 with an adhesive 50 instead of S, and otherwise the crystal oscillator of the comparative example has the same configuration as that of the present embodiment. and was produced.
  • a hard polyimide-based conductive adhesive was used as the adhesive 50 .
  • a hard polyimide-based adhesive can bond more firmly than a soft silicone-based adhesive, so it is suitable for wire bonding, and wire bonding can be performed stably.
  • the IC 4 can also be treated under the same curing conditions by bonding it to the base 2 using the same hard polyimide-based conductive adhesive as the crystal oscillator 3 .
  • FIGS. 10A and 10B The measurement results are shown in FIGS. 10A and 10B.
  • the horizontal axis is the elapsed time up to 6 hours after the heat treatment
  • the vertical axis is the frequency deviation (ppm) based on the frequency before the heat treatment
  • the frequency deviation before the treatment (dF /F) is set to 0.
  • the average value of the above 80 samples is shown.
  • FIG. 10A shows the frequency deviation of the crystal oscillator of the comparative example
  • FIG. 10B shows the frequency deviation of the crystal oscillator of this embodiment.
  • the crystal oscillator of the comparative example in FIG. 10A has a large frequency deviation over time, whereas the crystal oscillator of this embodiment in FIG. 10B has a small frequency deviation over time and frequency fluctuation is suppressed. I understand.
  • a hard polyimide-based adhesive has stronger adhesion than a soft silicone-based adhesive, and can stably hold the crystal oscillator 3 on the base 2.
  • the restraining force that restrains the second sealing plate 12 of the crystal resonator 3 is correspondingly stronger, the fluctuation of the frequency due to the thermal stress resulting from the heat treatment such as reflow treatment is increased.
  • the central region of the second sealing plate 12 to which the adhesive for joining the second sealing plate 12 to the base 2 is applied is circular in plan view. It may be oval, rectangular or other shape.
  • the central region of the second sealing plate 12 may be a rectangular region that covers the vibrating portion 15 of the crystal diaphragm 10 bonded to the second sealing plate 12 but does not cover the outer frame portion 17.
  • the central region of the second sealing plate 12 may be a rectangular region covering the vibrating portion 15 of the crystal plate 10 .
  • the adhesive 50 is applied to the entire central region S of the second sealing plate 12 and bonded to the inner bottom surface of the base 2. 50 may be applied and bonded to the inner bottom surface of the base 2 .
  • the second sealing plate 12 of the crystal oscillator 3 is bonded to the inner bottom surface of the base 2 with the adhesive 50.
  • other bonding materials such as solder may be used instead of the adhesive. good.
  • the first and second bonding pads 40a and 41a are formed at separated positions on both ends of the short sides of the second sealing plate 11 which is rectangular in plan view. In another embodiment of the invention, the first and second bonding pads may be formed in close proximity.
  • FIGS. 4A and 4B are diagrams showing a crystal diaphragm of a crystal oscillator used in a crystal oscillator according to another embodiment of the present invention, and are diagrams corresponding to FIGS. 4A and 4B. , are given the same reference numerals, and the description thereof is omitted.
  • the part of the bonding pattern 25 1 for first sealing on the vibration side that extends along the short side on the other side (the left side in FIG. 11A) of the crystal plate 10 1 extends from one corner (upper side in FIG. 11A) to the short side.
  • the outer peripheral side enters the inner peripheral side up to approximately the middle position, and the outer side is an area in which the surface of the crystal plate where the bonding pattern is not formed is exposed.
  • the area where the surface of the crystal plate is exposed serves as a non-bonded area 10 1 a that is not bonded to the first sealing plate 11 1 shown in FIG. 12B which will be described later.
  • the portion of the bonding pattern 26 1 for vibration side second sealing that extends along the short side of the other side (the left side in FIG. 11B) of the crystal plate 10 1 is the first vibration side sealing bonding pattern on one main surface side. From one corner (upper in FIG. 11B) to approximately the middle position of the short side, the outer peripheral side enters the inner peripheral side so that the outer peripheral side overlaps the joining pattern 25 1 in plan view, and the joining pattern is formed on the outer side.
  • the surface of the crystal plate, which is not covered with the crystal plate, is an exposed region. The area where the surface of the crystal plate is exposed serves as a non-bonded area 10 1 b that is not bonded to the second sealing plate 12 1 shown in FIG. 13A which will be described later.
  • the bonding patterns 25 1 and 26 1 for vibration-side first and second sealing are formed on the outer peripheral edges of the respective corners at both ends of the short side on the one side of the crystal diaphragm 10 1 .
  • the portion extending along the short side of the other side of the crystal diaphragm 101 extends from the one corner to the approximate middle position of the short side so that the outer circumference side enters the inner circumference side.
  • non-bonded areas 10 1 a and 10 1 b where the surface of the crystal plate on which the bonding pattern is not formed is exposed.
  • the non-bonded regions 10a, 10a; 4A and 4B) is provided on the outer frame portion 17 on one side of the substantially rectangular shape on the inner peripheral side (the side on the right side in FIGS. 4A and 4B).
  • the outer frame portion 17 on one side includes lead electrodes 21 and 22 from the excitation electrodes 19 and 20 of the vibrating portion 15, connection bonding patterns 23, 24, 27 and 28, and vibrating-side sealing electrodes. It is necessary to form wiring and bonding patterns such as the bonding patterns 25 and 26 .
  • the non-bonded regions 10 1 a and 10 1 b are formed in the outer frame portion 17 having a substantially rectangular annular shape in plan view via the connecting portion 18 . It is provided on the outer frame portion 17 on the opposite side (the left side in FIGS. 11A and 11B) opposite to the one side of the substantially rectangular inner periphery connected to the vibrating portion 15 .
  • each drawer formed on the outer frame portion 17 on one side is provided with the non-bonded areas 10a, 10a;
  • the non-bonding area can be formed without being restricted by the wiring and bonding patterns such as the electrodes 21 and 22, the connection bonding patterns 23, 24, 27 and 28, and the vibration side sealing bonding patterns 25 1 and 26 1 . It is easy to secure a sufficient space for providing 10 1 a and 10 1 b.
  • FIGS. 12A and 12B are views showing the first sealing plate bonded to the crystal plate 101 of FIGS. 11A and 11B, and are views corresponding to FIGS. 5A and 5B. are given the same reference numerals, and the description thereof is omitted.
  • the annular sealing-side first sealing bonding pattern 33-1 on the other main surface of the first sealing plate 11-1 shown in FIG. 12B) is formed up to the vicinity of the outer periphery of each corner at both ends of the short side, and unlike each corner of the first sealing plate 11 in FIG. .
  • the portion of the sealing-side first sealing bonding pattern 33-1 extending along the short side on the other side (left side in FIG. 12B) of the first sealing plate 11-1 is one corner (upper side in FIG. 12B).
  • the outer peripheral side enters the inner peripheral side, and the outer side is an area in which the surface of the crystal plate is exposed where the bonding pattern is not formed.
  • the region where the surface of the crystal plate is exposed faces the non-bonded region 10 1 a on one main surface of the crystal plate 10 1 shown in FIG. It has become.
  • This non-bonding region 11 1 a is formed with bonding patterns 25 1 and 26 1 for vibration-side first and second sealing on both main surfaces of the crystal diaphragm 10 1 of FIGS. 11A and 11B in plan view. It overlaps with the non-bonded regions 10 1 a and 10 1 b.
  • Other configurations on the other main surface side of the first sealing plate 111 are the same as those of the first sealing plate 11 in FIG. 5B.
  • a second external electrode terminal 41-1 is formed around the second through electrode 38 on one main surface of the first sealing plate 11-1 shown in FIG. 12A.
  • the second external electrode terminal 41-1 is formed in a rectangular shape at one corner of the short side on one side (the right side in FIG. 12A) of the first sealing plate 11-1 , which is rectangular in plan view. It extends along one long side to the other short side, and further extends slightly along the other short side to the other long side.
  • a second bonding pad 41 1 a is formed on the outer peripheral side of the extending end extending to the other long side along the other short side of the second external electrode terminal 41 1 .
  • the second external electrode terminal 41-1 includes the second through electrode 38, the connection bonding pattern 34, and the crystal plate 10-1 of FIGS. 11A and 11B. It is electrically connected to the second excitation electrode 20 of the crystal diaphragm 101 via the connection bonding pattern 27 , the first through electrode 31 and the connection bonding pattern 24 .
  • a first external electrode terminal 40-1 is formed around the third through electrode 39 on one main surface of the first sealing plate 11-1 .
  • the first external electrode terminal 40-1 extends along the short side from one corner (lower side in FIG. 12A) on the other side (left side in FIG. 12A) of the first sealing plate 11-1 which is rectangular in plan view. While extending toward the second external electrode terminal 411 from the corner, it extends to the short side on one side (the right side in FIG. 12A) along the long side from the corner.
  • the outer peripheral side of the extension end of the first external electrode terminal 40-1 extending toward the second external electrode terminal 41-1 serves as a first bonding pad 40-1a .
  • the first external electrode terminal 401 includes the third through-electrode 39, the connection bonding pattern 37, the connection wiring pattern 36, the connection bonding pattern 35, 11A and 11B, and is electrically connected to the first excitation electrode 19 of the crystal plate 10-1 through the connection bonding pattern 23 of the crystal plate 10-1 .
  • the first and second bonding pads 40 1 a and 41 1 a of the first sealing plate 11 1 are not formed with the sealing-side first sealing bonding pattern 33 1 on the other main surface in plan view. It overlaps with the non-bonding region 11 1 a and also overlaps with the non-bonding regions 10 1 a and 10 1 b where the vibration side first and second sealing bonding patterns 25 1 and 26 1 of the crystal plate 10 1 are not formed. .
  • FIGS. 13A and 13B are views showing the second sealing plate that is bonded to the crystal plate 101 of FIGS. 11A and 11B, and are views corresponding to FIGS. 6A and 6B. are given the same reference numerals, and the description thereof is omitted.
  • the part of the joint pattern 45-1 for vibration-side second sealing that extends along the short side on the other side (the left side in FIG. 13A) of the second sealing plate 12-1 extends from one corner (upper side in FIG. 13A).
  • the outer peripheral side enters the inner peripheral side up to approximately the middle position of the short side, and the outer side is an area where the surface of the crystal plate where the bonding pattern is not formed is exposed.
  • the region where the surface of the crystal plate is exposed faces the non-bonded region 10 1 b on the other main surface of the crystal plate 10 1 in FIG . It has become.
  • This non-bonding region 12 1 b is formed with bonding patterns 25 1 and 26 1 for vibration-side first and second sealing on both main surfaces of the crystal plate 10 1 shown in FIGS. 11A and 11B in plan view.
  • the non-bonding region 11-1 overlaps with the non-bonding regions 10-1a and 10-1b that do not have a sealing-side first sealing bonding pattern 33-1 on the other main surface of the first sealing plate 11-1 .
  • Other configurations on one main surface of the second sealing plate 121 are the same as those of the second sealing plate 12 shown in FIGS. 6A and 6B.
  • the first and second bonding pads 40 1 a and 41 1 a of the first sealing plate 11 1 seal the other main surface of the first sealing plate 11 1 in plan view.
  • a non-bonding region 11 1 a in which the side first sealing bonding pattern 33 1 is not formed, and vibration side first and second sealing bonding patterns 25 1 and 26 1 of the crystal diaphragm 10 1 are not formed. It overlaps with the non-bonding regions 10 1 a and 10 1 b and the non-bonding region 12 1 b where the vibration-side second sealing bonding pattern 45 1 of the second sealing plate 12 1 is not formed.
  • first and second bonding pads 40 1 a and 41 1 a are located in the first non-bonding regions 11 1 a and 11 1 a with the first gap between the first sealing plate 11 1 and the crystal plate 10 1 .
  • 10 1 a and the second non-bonding regions 10 1 b and 12 1 b having a second gap between the crystal diaphragm 10 1 and the second sealing plate 12 1 in plan view. ing.
  • the Excessive pressing force can be relieved and relieved by the first and second gaps of the first and second non-bonding regions 11 1 a, 10 1 a; 10 1 b, 12 1 b. Also, the first and second sealing plates 11 1 and 12 1 can be prevented from being deformed or damaged such as cracks.
  • the first and second bonding pads 40 1 a and 41 1 a are the first and second bonding pads 40 a of the first sealing plate 11 shown in FIGS. 5A and 5B of the above embodiment.
  • 41a which are rectangular in plan view, but not at the corners of both ends of the short sides of the first sealing plate 11, but at close positions on the inner side, wire bonding can be performed stably. can.
  • the first and second excitation electrodes 19 and 20 of the crystal diaphragm plates 10 and 101 and the first and second external electrode terminals of the first sealing plates 11 and 111 40, 41; 40 1 , 41 1 are electrically connected through the through electrodes 31, 38, 39, but in another embodiment of the present invention, electrical connections are made through side electrodes instead of the through electrodes. can be connected directly.
  • FIGS. 4A and 4B are diagrams showing a crystal diaphragm of a crystal oscillator according to another embodiment of the present invention using side electrodes instead of through electrodes, and are diagrams corresponding to FIGS. 4A and 4B. , corresponding parts are denoted by the same reference numerals, and the description thereof is omitted.
  • a bonding pattern 252 for vibration-side first sealing connection is formed in a ring shape on a substantially rectangular ring-shaped outer frame portion 17 surrounding the vibration portion 15. As shown in FIG. ing.
  • the bonding pattern 252 for connection of the first sealing on the vibration side is different from the bonding pattern 25 for first sealing on the vibration side of the crystal diaphragm 10 of FIG. They are electrically connected via electrodes 212 .
  • one end side (upper side in FIG. 14A) of the short side (right side in FIG. 14A) on one side (right side in FIG. 14A) of the crystal plate 10 2 which is rectangular in plan view is an outer peripheral edge.
  • a first wide portion 25 2 a extends up to the edge of the crystal plate 10 2 on the other side (left side in FIG. 14A) of the other short side (lower side in FIG. 14A) near the corner. It is a wide second wide portion 25 2 b extending to the outer peripheral edge.
  • a connecting joint pattern 58 is formed on the outer peripheral edge of the corner of the other side (left side in FIG. 14A) of the crystal diaphragm 10 2 , which is opposite to the second wide portion 25 2 b. ing.
  • This connection joint pattern 58 is continuous with its outer peripheral edge and is connected to a fourth wide portion 26 2 b of a later-described vibration side second seal connection joint pattern 26 2 on the other main surface shown in FIG. 14B.
  • a continuous first side electrode 68 is formed.
  • connection joint pattern 55 is formed on the outer peripheral edge of the diagonal corner of the connection joint pattern 58 .
  • the bonding pattern 25 2 for vibration side first sealing connection extending along the short side of the other side (left side in FIG. 14A) of the crystal diaphragm 10 2 is narrower than the second wide portion 25 2 b,
  • the outside is an area where the surface of the crystal plate is exposed, where the bonding pattern is not formed.
  • the area where the surface of the crystal plate is exposed serves as a non-bonded area 10 2 a to which the first sealing plate 11 2 shown in FIG. 15B, which will be described later, is not bonded.
  • a vibration-side second sealing connection bonding pattern 262 is formed in a ring shape on the substantially rectangular ring-shaped outer frame portion 17 surrounding the vibration portion 15 . ing.
  • the bonding pattern 262 for connection of the second sealing on the vibration side differs from the bonding pattern 26 for second sealing on the vibration side of the crystal plate 10 in FIG. They are electrically connected via electrodes 222 .
  • the other end of the short side (lower side in FIG. 14B) of one side (right side in FIG. 14B) of the crystal plate 102 rectangular in plan view is outside.
  • a wide third wide portion 26 2 a extends to the peripheral edge, and one end side (upper side in FIG. 14B) of the short side on the other side (left side in FIG. 14B) of the crystal plate 10 2 extends to the peripheral edge. It is a wide fourth wide portion 26 2 b.
  • the first side electrode 68 is continuous with the outer peripheral edge of the fourth wide portion 26 2 b. Therefore, the fourth wide portion 26 2 b of the bonding pattern 26 2 for second sealing connection on the vibration side is connected to one main surface of the crystal plate 10 2 shown in FIG. It is electrically connected to the connection pattern 58 for use. Since the bonding pattern 262 for vibration-side second sealing connection is electrically connected to the second excitation electrode 20 of the vibration part 15 as described above, it is used for connection to one main surface of the crystal plate 102 . The bonding pattern 58 is electrically connected to the second excitation electrode 20 of the vibrating section 15 via the first side electrode 68 and the bonding pattern 262 for vibration-side second sealing connection.
  • connection bonding pattern 56 extending to the periphery is formed.
  • the bonding pattern 26 2 for vibration side second sealing connection extending along the short side of the other side (left side in FIG. 14B) of the crystal plate 10 2 is narrower than the fourth wide portion 26 2 b,
  • the outside is an area where the surface of the crystal plate is exposed, where the bonding pattern is not formed.
  • the area where the surface of the crystal plate is exposed serves as a non-bonded area 10 2 b to which the second sealing plate 12 2 in FIG. 16A, which will be described later, is not bonded.
  • the non-bonding region 10 2 a on one main surface of the crystal plate 10 2 and the non-bonding region 10 2 b on the other main surface of the crystal plate 10 2 are, in plan view, the other side of the crystal plate 10 2 ( FIG. 14A , Left side of FIG. 14B) overlaps at the middle portion except for both end portions of the short side.
  • 15A and 15B are views showing the first sealing plate bonded to the crystal plate 102 of FIGS. 14A and 14B, and are views corresponding to FIGS. 5A and 5B.
  • the sealing-side first sealing-connection bonding pattern 33 2 is substantially the same as the vibration-side first sealing-connection bonding pattern 25 2 on one main surface of the crystal plate 10 2 in FIG. It has a similar bonding pattern, and is bonded and electrically connected to the vibration-side first sealing connection bonding pattern 25-2 on one main surface of the crystal plate 102. As shown in FIG. The bonding pattern 25 2 for vibration-side first sealing connection on one main surface of the crystal plate 10 2 is electrically connected to the first excitation electrode 19 of the vibrating section 15 as described above. The bonding pattern 33 2 for sealing side first sealing connection on the other main surface of the 1 sealing plate 11 2 is electrically connected to the first excitation electrode 19 of the vibrating section 15 .
  • the second wide portion 33 2 b of the sealing-side first sealing connection bonding pattern 33 2 is formed with a second side electrode 70 that is continuous with the outer peripheral edge of the second wide portion 33 2 b. It is electrically connected to the first excitation electrode 19 of the vibrating section 15 via the bonding pattern 332 for sealing-side first sealing connection.
  • This second side electrode 70 is a fourth side electrode 66 that is continuous with the outer peripheral edge of the second wide portion 25 2 b of the vibration side first sealing connection bonding pattern 25 2 of the crystal diaphragm 10 2 shown in FIG. 14A. is also electrically connected to
  • connection bonding pattern 59 is bonded to the connection bonding pattern 58 on one main surface of the crystal plate 102 in FIG. 14A.
  • the connection bonding pattern 58 is connected to the second excitation electrode of the vibrating section 15 via the first side electrode 68 and the vibration side second sealing connection bonding pattern 262 of the crystal diaphragm 102 of FIG. 14B as described above. 20 is electrically connected.
  • connection bonding pattern 59 on the other main surface of the first sealing plate 112 is also electrically connected to the second excitation electrode 20 of the vibrating portion 15 of the crystal plate 102 .
  • a third side electrode 72 is formed continuously on the outer peripheral edge of the connection bonding pattern 59 . Therefore, this third side electrode 72 is also electrically connected to the second excitation electrode 20 of the vibrating portion 15 of the crystal diaphragm 102 .
  • connection joint pattern 57 is formed on the outer peripheral edge of the diagonal corner of the connection joint pattern 59 .
  • the sealing-side first sealing connection bonding pattern 33-2 extending along the short side of the other side (the left side in FIG . 15B) of the first sealing plate 11-2 is wider than the second wide portion 33-2b . is narrow, and the outside is an area where the surface of the crystal plate is exposed, where the bonding pattern is not formed.
  • the region where the surface of the crystal plate is exposed faces the non-bonded region 10 2 a on one main surface of the crystal plate 10 2 shown in FIG. 2 a.
  • bonding patterns 25 2 and 26 2 for vibration-side first and second sealing connections on both main surfaces of the crystal plate 10 2 shown in FIGS. 14A and 14B are formed in plan view. It substantially overlaps the non-bonded regions 10 2 a and 10 2 b.
  • First and second external electrode terminals 40.sub.2 and 41.sub.2 are formed extending along the short sides to near their intermediate positions.
  • the second side electrode 70 is continuous with the outer peripheral edge of the first external electrode terminal 402 , and the second side electrode 70 is connected to the first electrode of the vibrating portion 15 of the crystal plate 102 as described above. Since it is electrically connected to the excitation electrode 19, the first external electrode terminal 40-2 is also electrically connected to the first excitation electrode 19 of the vibrating portion 15 of the crystal diaphragm 10-2 .
  • the third side electrode 72 is continuous with the outer peripheral edge of the second external electrode terminal 412 , and the third side electrode 72 is connected to the second electrode of the vibrating portion 15 of the crystal plate 102 as described above. Since it is electrically connected to the excitation electrode 20, the second external electrode terminal 41-2 is also electrically connected to the second excitation electrode 20 of the vibrating portion 15 of the crystal diaphragm 10-2 .
  • the first and second external electrode terminals 40 2 and 41 2 are located substantially in the middle of the short sides of the other side (left side in FIG. 15A) of the first sealing plate 11 2 which is rectangular in plan view. 1, second bonding pads 40 2 a and 41 2 a are formed.
  • the first and second bonding pads 40 2 a and 41 2 a of the first sealing plate 11 2 are formed with the bonding pattern 33 2 for sealing side first sealing connection on the other main surface in plan view.
  • the non-bonded region 11 2a overlaps with the non-bonded region 11 2 a and the vibration-side first and second sealing connection bonding patterns 25 2 and 26 2 of the crystal diaphragm 10 2 shown in FIGS. 14A and 14B are not formed. It overlaps the regions 10 2 a and 10 2 b.
  • 16A and 16B are diagrams showing the second sealing plate bonded to the crystal plate 102 of FIGS. 14A and 14B, corresponding to FIGS. 6A and 6B.
  • the bonding pattern 262 for vibration-side second sealing connection on the other main surface of the crystal plate 102 is substantially the same as the bonding pattern 262 for the vibration-side second sealing connection on the other main surface of the crystal plate 102. Bonded to bonding pattern 262 .
  • one end side (lower side in FIG. 16A) of the short side of the second sealing plate 12 2 that is rectangular in plan view (right side in FIG. 16A) is A wide first wide portion 45 2 a extends to the outer peripheral edge, and the other end side (upper side in FIG. 16A) of the short side of the other side (left side in FIG. 16A) of the second sealing plate 12 2 extends outward. It is a wide second wide portion 45 2 b extending to the peripheral edge.
  • the sealing-side first sealing bonding pattern 45 2 on the short side of the other side (left side in FIG. 16A) of the second sealing plate 12 2 is narrower than the second wide portion 45 2 b, and is an area where the surface of the crystal plate is exposed, where the bonding pattern is not formed.
  • the area where the surface of the crystal plate is exposed is a non-bonding area 12 2 b to which the bonding pattern 26 2 for second sealing connection on the vibrating side of the crystal plate 10 2 is not bonded.
  • This non-bonded region 12 2 b partially overlaps the non-bonded regions 10 2 a and 10 2 b of the crystal diaphragm 10 2 and overlaps the non-bonded region 11 2 a of the first sealing plate 11 2 in plan view. partially overlaps with
  • connection bonding pattern 60 is formed.
  • the excessive pressure is applied to the non-bonded regions 11 2 a and 10 2 of the first sealing plate 11 2 , the crystal plate 10 2 and the second sealing plate 12 2 . a; It can be relieved by the first and second gaps of 10 2 b and 12 2 b, and the crystal diaphragm 10 2 and the first and second sealing plates 11 2 and 12 2 may be deformed, Damage can be prevented.
  • the non-bonded regions 10 2 a and 10 2 b of the crystal diaphragm 10 2 are located on the inner peripheral side of the outer frame portion 17 which is substantially rectangular and annular in plan view and is connected to the vibrating portion 15 via the connecting portion 18 . It is provided on the outer frame portion 17 on the opposite side (the left side in FIGS. 14A and 14B) opposite to one side of the rectangle (the right side in FIGS. 14A and 14B).
  • the non-bonded areas 10 2 a and 10 2 b of the crystal diaphragm 10 2 are located on the opposite side of the outer frame portion 17 to the one side connected to the vibrating portion 15 via the connecting portion 18 . It is provided on the outer frame portion 17 on the side. 4A and 4B, the non-bonded regions 10a, 10a; In contrast to the outer frame portion 17 on the right side of FIG. 4B, in this embodiment, Since the non-bonded regions 10 2 a and 10 2 b are provided on the outer frame portion 17 on the side opposite to one side, the distance from the connecting portion 18 is long.
  • the non-bonding regions 10 2 a and 10 2 b overlap the first and second bonding pads 40 2 a and 41 2 a of the first sealing plate 11 2 in plan view. Therefore, a pressing force is applied to the non-bonding regions 10 2 a and 10 2 b in order to connect the bonding wires. It is possible to reduce the transmission of the pressing force applied to the non-bonded regions 10 2 a and 10 2 b to the vibrating portion 15 via the connecting portion 18 .
  • the first and second bonding pads 40 2 a and 41 2 a are located on the short side of the other side (left side in FIG. 15A) of the first sealing plate 11 2 . It is formed at a substantially intermediate position.
  • One end of the short side is a joint portion between the connection joint pattern 59 shown in FIG. 15B and the connection joint pattern 58 of the crystal plate 102 shown in FIG. 14A.
  • both ends of the short side are firmly joined.
  • both ends of the short side are connected to the first and second bonding pads 40 a and 41 a shown in FIG. 5A.
  • Wire bonding can be performed more stably than when wire bonding is performed at the corners.
  • test terminals 75 and 76 for testing are formed on one main surface of the first sealing plate 112 , as shown in FIG. 15A.
  • One test terminal 75 is connected to the first excitation electrode 19 of the vibration part 15 via the side electrode 69, the sealing-side first sealing connection bonding pattern 33 2 , and the vibration-side first sealing connection bonding pattern 25 2 . electrically connected.
  • the side electrode 69 is also electrically connected to the side electrode 65 continuous to the outer peripheral edge of the first wide portion 25 2 a of the bonding pattern 25 2 for first sealing connection on the vibration side.
  • the other test terminal 76 is connected to the second excitation electrode of the vibrating part 15 through the side electrode 71, the connection bonding pattern 57, the connection bonding pattern 55, the side electrode 67, and the vibration side second sealing connection bonding pattern 262 . 20 is electrically connected.
  • FIG. 17 is a schematic side view showing a state in which a crystal oscillator according to another embodiment of the present invention is bonded to a base, and is a view corresponding to FIG. 9 above
  • FIG. FIG. 6C is a schematic plan view showing the other main surface side of the second sealing plate, and is a view corresponding to FIG. 6B.
  • the other main surface of the second sealing plate 123 that is, the main surface of the side to be bonded to the inner bottom surface of the base 2 with the adhesive 50, is coated with the adhesive 50 on the outer side of the circular central region S.
  • a circular annular groove 55 is formed so as to surround the entire circumference of the central region S. As shown in FIG.
  • the circular annular groove 55 is formed outside the central region S where the second sealing plate 12-3 of the crystal unit 3-3 is joined to the base 2 in this manner, the heat caused by heat treatment such as reflow treatment is prevented.
  • the stress is applied to the central region S of the second sealing plate 123 restrained by the adhesive 50, it is relieved and absorbed by the annular groove 55 and transmitted to the outer peripheral portion of the second sealing plate 123. can reduce thermal stress.
  • the thermal stress transmitted from the outer peripheral portion of the second sealing plate 123 to the vibrating portion 15 via the outer frame portion 17 of the crystal diaphragm 10 can be reduced, effectively suppressing frequency fluctuations. can do.
  • the groove formed outside the area to which the adhesive is applied is not limited to an annular groove, and may be a plurality of divided grooves or recesses, and the planar shape thereof may be linear, circular, or other. It may be in shape.
  • the crystal oscillator 3 and the IC 4 are placed horizontally and mounted on the base 2, but the crystal oscillator and electronic components such as ICs may be arranged in layers.
  • FIG. 19 is a schematic configuration diagram of a constant temperature oven type crystal oscillator according to another embodiment of the present invention.
  • an oscillation IC 83, a crystal oscillator 84, and a heater IC 85 are laminated in order from above on an insulating substrate 82 accommodated in a concave portion of a base 81.
  • a lid 86 is joined to the edge of the upper opening for hermetic sealing.
  • the oscillation IC 83 is mounted on the crystal oscillator 84 via a plurality of metal bumps.
  • the crystal oscillator 84 has a sandwich structure composed of three layers of a crystal oscillation plate and first and second sealing plates, as in the above embodiment.
  • the heater IC 85 has a configuration in which a heating element, a control circuit for controlling the temperature of the heating element, and a temperature sensor for detecting the temperature of the heating element are integrated.
  • the crystal oscillator 84 and the heater IC 85 are wire-bonded to connection electrodes on the upper surface of the step on the inner peripheral side of the base 81 by bonding wires 87 and 88, respectively.
  • connection position of the crystal oscillator 84 by the bonding wire 87 overlaps the non-bonded area where the crystal oscillator plate and the first and second sealing plates are not bonded in plan view, as in each of the above-described embodiments.
  • the first gap is formed between the non-bonded region of the first sealing plate and the non-bonded region of the crystal plate, and the non-bonded region of the second sealing plate and the crystal plate are separated from each other.
  • the second gap is formed between the non-bonded region and the non-bonded region
  • the non-bonded region of the first sealing plate and the non-bonded region of the crystal plate are omitted and the two are bonded.
  • the first gap between the first sealing plate and the crystal diaphragm may be eliminated, or the non-bonding region of the second sealing plate and the crystal diaphragm are omitted and the two are bonded,
  • the second gap between the second sealing plate and the crystal diaphragm may be eliminated.
  • the vibrating portion 15 of the crystal diaphragm 10 is connected to the outer frame portion 17 on the outer periphery by the connecting portion 18 at one location, but the connecting portions are formed at a plurality of locations so that the outer frame portion is connected at a plurality of locations.
  • the space 16 formed by the penetrating portion between the vibrating portion 15 and the outer frame portion 17 may be omitted, and the entire circumference of the thin vibrating portion 15 may be connected to the outer frame portion 17 .
  • the vibrating portion 15 in the central portion of the crystal plate 10 is formed thinner than the outer frame portion 17, but the vibrating portion and the outer frame portion of the crystal plate may have the same thickness.
  • a bonding material that joins the crystal plate and the first and second sealing plates is thickened to form a space between the vibrating portion of the crystal plate and the first and second sealing plates.
  • crystal was used for the first and second sealing plates 11 and 12, but the material is not limited to this, and other insulating materials such as glass may be used.
  • the AT-cut crystal is used for the crystal plate 10 in the above-described embodiment, it is not limited to this, and a crystal other than the AT-cut crystal may be used.
  • a piezoelectric diaphragm made of a piezoelectric material such as lithium tantalate or lithium niobate may be used.
  • the through electrodes 31, 38, and 39 are formed by coating the inner wall surfaces of the through holes with a metal film, but the through holes may be filled with a conductive material.
  • the base 2 has a recess for mounting the crystal oscillator 3 and the like
  • the lid 5 has a flat plate shape.
  • a lid having a concave portion may be placed so as to cover the crystal oscillator or the like on the base.
  • the base may be flat, the lid may be omitted, and the crystal oscillator or the like on the wire-bonded base may be molded with resin.
  • the base is not limited to ceramic, and may be a glass epoxy substrate, a silicon substrate, a glass substrate, a crystal substrate, or the like.
  • the IC 4 as an electronic component is mounted on the base 2 together with the crystal oscillator 3 and hermetically sealed by joining the lid 5.
  • the electronic component is omitted.
  • only the crystal oscillator may be mounted on the base and hermetically sealed by joining the lid.
  • the IC 4 and the crystal oscillator 3 as electronic components are arranged side by side on the base 2, but the electronic components may be stacked on the crystal oscillator, for example.
  • a base with an H-shaped cross section may be used as the base, and the crystal oscillator may be mounted on one of the upper and lower concave portions, and the electronic component may be mounted on the other.
  • the crystal oscillator is not limited to the above embodiment, and may be a temperature compensated crystal oscillator (TCXO) or the like.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)

Abstract

Dans la présente invention, un plot de liaison pour une liaison de fil est formé sur la surface externe d'une première plaque d'étanchéité d'un oscillateur piézoélectrique ayant la première plaque d'étanchéité et une deuxième plaque d'étanchéité, qui sont jointes aux deux surfaces principales d'une plaque d'oscillation piézoélectrique. Des régions de non-jonction qui ne sont pas jointes l'une à l'autre sont disposées sur une partie de la partie périphérique externe d'une plaque d'étanchéité parmi les première et deuxième plaques d'étanchéité et sur une partie de la partie périphérique externe de la plaque d'oscillation piézoélectrique. Le plot de liaison chevauche la région de non-jonction dans une vue en plan.
PCT/JP2023/000753 2022-01-26 2023-01-13 Oscillateur piézoélectrique et dispositif d'oscillation piézoélectrique WO2023145483A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012124706A (ja) * 2010-12-08 2012-06-28 Nippon Dempa Kogyo Co Ltd 圧電発振器の製造方法及び圧電発振器
JP2012249179A (ja) * 2011-05-30 2012-12-13 Seiko Epson Corp 圧電デバイスの製造方法、ウェーハの積層構造、圧電デバイス、圧電モジュール
JP2020108109A (ja) * 2018-12-28 2020-07-09 セイコーエプソン株式会社 振動デバイス、振動モジュール、電子機器および移動体
JP2021158586A (ja) * 2020-03-27 2021-10-07 株式会社大真空 圧電発振器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68914779T2 (de) * 1988-10-31 1994-12-01 Hitachi Ltd Akustische Oberflächenwellenfilteranordnung.
CN111312667B (zh) * 2019-09-20 2023-04-18 天津大学 带导电通孔偏移结构的半导体器件、供电结构和电子设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012124706A (ja) * 2010-12-08 2012-06-28 Nippon Dempa Kogyo Co Ltd 圧電発振器の製造方法及び圧電発振器
JP2012249179A (ja) * 2011-05-30 2012-12-13 Seiko Epson Corp 圧電デバイスの製造方法、ウェーハの積層構造、圧電デバイス、圧電モジュール
JP2020108109A (ja) * 2018-12-28 2020-07-09 セイコーエプソン株式会社 振動デバイス、振動モジュール、電子機器および移動体
JP2021158586A (ja) * 2020-03-27 2021-10-07 株式会社大真空 圧電発振器

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