WO2023126742A1 - 表示装置、及び表示装置の作製方法 - Google Patents

表示装置、及び表示装置の作製方法 Download PDF

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Publication number
WO2023126742A1
WO2023126742A1 PCT/IB2022/062264 IB2022062264W WO2023126742A1 WO 2023126742 A1 WO2023126742 A1 WO 2023126742A1 IB 2022062264 W IB2022062264 W IB 2022062264W WO 2023126742 A1 WO2023126742 A1 WO 2023126742A1
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Prior art keywords
layer
light
pixel
display device
sub
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Ceased
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PCT/IB2022/062264
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English (en)
French (fr)
Japanese (ja)
Inventor
方堂涼太
岡崎健一
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN202280084944.4A priority Critical patent/CN118435724A/zh
Priority to JP2023570484A priority patent/JPWO2023126742A1/ja
Priority to KR1020247022525A priority patent/KR20240125593A/ko
Priority to US18/723,543 priority patent/US20250063893A1/en
Publication of WO2023126742A1 publication Critical patent/WO2023126742A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/771—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80523—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition

Definitions

  • One aspect of the present invention relates to a display device, a display module, and an electronic device.
  • One embodiment of the present invention relates to a method for manufacturing a display device.
  • one aspect of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (eg, touch sensors), input/output devices (eg, touch panels), and the like. or methods of manufacturing them.
  • Display devices are expected to be applied to various purposes. For example, applications of large display devices include home television devices (also referred to as televisions or television receivers), digital signage (digital signage), and PIDs (Public Information Displays).
  • home television devices also referred to as televisions or television receivers
  • digital signage digital signage
  • PIDs Public Information Displays
  • mobile information terminals such as smart phones and tablet terminals with touch panels are being developed.
  • Devices that require high-definition display devices include, for example, virtual reality (VR), augmented reality (AR), alternative reality (SR), and mixed reality (MR) ) are being actively developed.
  • VR virtual reality
  • AR augmented reality
  • SR alternative reality
  • MR mixed reality
  • a light-emitting device having a light-emitting device As a display device, for example, a light-emitting device having a light-emitting device (also referred to as a light-emitting element) has been developed.
  • a light-emitting device also referred to as an EL device or EL element
  • EL the phenomenon of electroluminescence
  • EL is a DC constant-voltage power supply that can easily be made thin and light, can respond quickly to an input signal, and It is applied to a display device.
  • Patent Document 1 discloses a display device for VR using an organic EL device (also called an organic EL element).
  • An object of one embodiment of the present invention is to provide a display device with high display quality.
  • An object of one embodiment of the present invention is to provide a high-definition display device.
  • An object of one embodiment of the present invention is to provide a high-resolution display device.
  • An object of one embodiment of the present invention is to provide a highly reliable display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a high-definition display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a high-resolution display device.
  • An object of one embodiment of the present invention is to provide a highly reliable method for manufacturing a display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high yield.
  • One embodiment of the present invention is a display device that includes a first light-emitting device, a second light-emitting device, and a layer.
  • the first light emitting device includes a first pixel electrode, a first light emitting layer on the first pixel electrode, a first common electrode on the first light emitting layer, and a first light emitting layer on the first common electrode. 2 common electrodes.
  • the second light-emitting device includes a second pixel electrode, a second light-emitting layer on the second pixel electrode, a first common electrode on the second light-emitting layer, and a first light emitting layer on the first common electrode. 2 common electrodes.
  • a layer is provided between the first light emitting device and the second light emitting device.
  • a second common electrode is provided on the layer.
  • the layer is preferably an insulating layer.
  • the layer is preferably a conductive layer.
  • the display device described above preferably has a first insulating layer and a second insulating layer.
  • the first pixel electrode, the second pixel electrode, and the second insulating layer are preferably provided over the first insulating layer.
  • the height of the upper surface of the second insulating layer is preferably higher than the height of the upper surface of the first common electrode.
  • the display device described above preferably has a third insulating layer.
  • the third insulating layer is preferably provided on the second insulating layer.
  • the height of the upper surface of the third insulating layer is preferably higher than the height of the upper surface of the second common electrode in the region in contact with the first common electrode.
  • the layer is preferably an insulating layer.
  • the third insulating layer preferably has the same material as the layers.
  • the end of the first light-emitting layer is preferably located outside the end of the first pixel electrode. It is preferable that the edge of the second light-emitting layer be located outside the edge of the second pixel electrode.
  • the first light-emitting layer preferably has a region overlapping with the second light-emitting layer.
  • the display device described above preferably has a first common layer.
  • the first common layer is preferably sandwiched between the first pixel electrode and the first light-emitting layer.
  • the first common layer is preferably sandwiched between the second pixel electrode and the second light-emitting layer.
  • the first common layer preferably has a carrier injection layer.
  • the display device described above preferably has a second common layer.
  • the second common layer is preferably sandwiched between the first light emitting layer and the first common electrode.
  • the second common layer is preferably sandwiched between the second light emitting layer and the first common electrode.
  • the second common layer preferably has a carrier injection layer.
  • a first pixel electrode and a second pixel electrode are formed, a first light-emitting layer is formed over the first pixel electrode using a first mask, and a second pixel electrode is formed.
  • a second light-emitting layer is formed over the electrode using a second mask, and a first common electrode is formed over the first light-emitting layer and the second light-emitting layer using a third mask.
  • a first pixel electrode and a second pixel electrode are formed over a first insulating layer, a second insulating layer is formed over the first insulating layer, and a first pixel electrode is formed over the first insulating layer.
  • a first light-emitting layer is formed over the pixel electrode using a first mask, a second light-emitting layer is formed over the second pixel electrode using a second mask, and the first light-emitting layer is formed.
  • a first common electrode is formed on the upper and second light-emitting layers using a third mask, a third insulating layer is formed on a portion of the first common electrode, and a second
  • a fourth insulating layer is formed over the insulating layer, and a second common electrode is formed using a fourth mask in a region overlapping with the first common electrode.
  • a third insulating layer is provided between the first pixel electrode and the second pixel electrode.
  • a second common electrode is provided on the first common electrode and on the third insulating layer.
  • the height of the upper surface of the second insulating layer is higher than the height of the upper surface of the first common electrode in a cross-sectional view.
  • the first mask is preferably in contact with the upper surface of the second insulating layer.
  • the second mask is preferably in contact with the upper surface of the second insulating layer.
  • the third mask is preferably in contact with the upper surface of the second insulating layer.
  • the height of the upper surface of the fourth insulating layer is preferably higher than the height of the upper surface of the second common electrode in the region in contact with the first common electrode.
  • the fourth mask is preferably in contact with the upper surface of the fourth insulating layer.
  • a display device with high display quality can be provided.
  • One embodiment of the present invention can provide a high-definition display device.
  • One embodiment of the present invention can provide a high-resolution display device.
  • One embodiment of the present invention can provide a highly reliable display device.
  • a method for manufacturing a high-definition display device can be provided.
  • a method for manufacturing a high-resolution display device can be provided.
  • a highly reliable method for manufacturing a display device can be provided.
  • a method for manufacturing a display device with high yield can be provided.
  • FIG. 1A is a top view showing an example of a display device.
  • FIG. 1B is a cross-sectional view showing an example of a display device; 2A and 2B are cross-sectional views showing an example of a display device. 3A and 3B are cross-sectional views showing an example of a display device. 4A and 4B are cross-sectional views showing an example of a display device. 5A and 5B are cross-sectional views showing an example of the display device. 6A and 6B are cross-sectional views showing an example of the display device. 7A and 7B are cross-sectional views showing an example of a display device.
  • FIG. 8A is a top view showing an example of a display device.
  • FIG. 8B is a cross-sectional view showing an example of a display device
  • FIG. 9 is a top view showing an example of a display device
  • 10A and 10B are cross-sectional views showing examples of display devices.
  • FIG. 11 is a top view showing an example of a display device.
  • FIG. 12 is a top view showing an example of a display device.
  • 13A to 13C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 14A to 14C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 15A to 15C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 16A and 16B are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 17A and 17B are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 18A and 18B are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 19A to 19F are diagrams showing examples of pixels.
  • 20A to 20K are diagrams showing examples of pixels.
  • 21A and 21B are perspective views showing an example of a display device.
  • 22A to 22C are cross-sectional views showing examples of display devices.
  • FIG. 23 is a cross-sectional view showing an example of a display device.
  • FIG. 24 is a cross-sectional view showing an example of a display device.
  • FIG. 25 is a cross-sectional view showing an example of a display device.
  • FIG. 26 is a cross-sectional view showing an example of a display device.
  • FIG. 27 is a cross-sectional view showing an example of a display device.
  • 28A to 28F are diagrams showing configuration examples of light emitting devices.
  • 29A and 29B are diagrams showing configuration examples of light receiving devices.
  • 29C to 29E are diagrams showing configuration examples of display devices.
  • 30A to 30D are diagrams illustrating examples of electronic devices.
  • 31A to 31F are diagrams illustrating examples of electronic devices.
  • 32A to 32G are diagrams showing examples of electronic devices.
  • film and “layer” can be interchanged depending on the case or situation.
  • conductive layer can be changed to the term “conductive film.”
  • insulating film can be changed to the term “insulating layer”.
  • holes or electrons are sometimes referred to as "carriers".
  • the hole injection layer or electron injection layer is referred to as a "carrier injection layer”
  • the hole transport layer or electron transport layer is referred to as a “carrier transport layer”
  • the hole blocking layer or electron blocking layer is referred to as a "carrier It is sometimes called a block layer.
  • the carrier injection layer, the carrier transport layer, and the carrier block layer described above may not be clearly distinguished from each other due to their cross-sectional shape, characteristics, or the like.
  • one layer may serve as two or three functions of the carrier injection layer, the carrier transport layer, and the carrier block layer.
  • a light-emitting device (also referred to as a light-emitting element) has an EL layer between a pair of electrodes.
  • the EL layer has at least a light-emitting layer.
  • the layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier-injection layer (a hole-injection layer and an electron-injection layer), a carrier-transport layer (a hole-transport layer and an electron-transport layer), and a carrier layer.
  • a light-receiving device also referred to as a light-receiving element
  • one of a pair of electrodes may be referred to as a pixel electrode and the other may be referred to as a common electrode.
  • a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface or the formation surface. For example, it is preferable to have a region where the angle between the inclined side surface and the substrate surface or the formation surface (also referred to as a taper angle) is less than 90°. Note that the side surfaces of the structure, the substrate surface, and the formation surface are not necessarily completely flat, and may be substantially planar with a minute curvature or substantially planar with minute unevenness.
  • One embodiment of the present invention is a display device that includes a first light-emitting device, a second light-emitting device, and a layer.
  • the first light emitting device has a first pixel electrode, a first light emitting layer over the first pixel electrode, and a common electrode over the first light emitting layer.
  • the second light emitting device has a second pixel electrode, a second light emitting layer over the second pixel electrode, and a common electrode over the second light emitting layer.
  • the common electrode has a laminated structure of a first common electrode and a second common electrode on the first common electrode.
  • a layer is provided between the first light emitting device and the second light emitting device.
  • a second common electrode is provided on the layer.
  • the first common electrode has a recess due to the region where the pixel electrode is not provided.
  • the aforementioned layers are provided on the first common electrode to fill this recess.
  • a second common electrode is provided over the layers.
  • the edge of the first light-emitting layer is located outside the edge of the first pixel electrode.
  • the edge of the second light-emitting layer is located outside the edge of the second pixel electrode. That is, the first light-emitting layer covers the top and side surfaces of the first pixel electrode.
  • the second light-emitting layer covers the top and side surfaces of the second pixel electrode.
  • a first common electrode is provided on the first light emitting layer and the second light emitting layer. Since the first light-emitting layer and the second light-emitting layer are not exposed in the step of forming layers over the first common electrode, damage to the first light-emitting layer and the second light-emitting layer can be suppressed.
  • a structure in which light-emitting layers are separately produced or painted separately for light-emitting devices of each color is sometimes called an SBS (side-by-side) structure.
  • SBS side-by-side
  • the SBS structure can optimize the material and configuration for each emission color, the degree of freedom in selecting the material and configuration increases, and it becomes easy to improve the luminance and reliability.
  • island means that two or more layers formed in the same process and using the same material are physically separated.
  • FIG. 1A A top view of a display device 100 that is one embodiment of the present invention is shown in FIG. 1A.
  • the display device 100 has a pixel portion 105 in which a plurality of pixels 110 are arranged in a matrix, and a connection portion 140 outside the pixel portion 105 .
  • Pixels 110 each have a plurality of sub-pixels.
  • FIG. 1A shows two rows and two columns of pixels. A sub-pixel is shown.
  • the connection portion 140 can also be called a cathode contact portion.
  • Each sub-pixel has a display device (also called a display element).
  • display devices include light-emitting devices (also referred to as light-emitting elements).
  • the light emitting device for example, an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode) is preferably used.
  • Examples of light-emitting substances included in the light-emitting device include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF) materials).
  • a light-emitting substance included in an EL element not only an organic compound but also an inorganic compound (eg, quantum dot material) can be used.
  • the emission color of the light emitting device can be infrared, red, green, blue, cyan, magenta, yellow, white, or the like.
  • color purity can be enhanced by providing a light-emitting device with a microcavity structure.
  • a display device of one embodiment of the present invention includes a light-emitting device manufactured for each emission color, and is capable of full-color display.
  • the top surface shape of the sub-pixel shown in FIG. 1A corresponds to the top surface shape of the light emitting region of the light emitting device.
  • Examples of top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles, rhombuses, and squares), polygons such as pentagons, polygons with rounded corners, ellipses, and circles.
  • Each sub-pixel has a pixel circuit that controls a light-emitting device.
  • the pixel circuit is not limited to the range of the sub-pixels shown in FIG. 1A, and may be arranged outside thereof.
  • the transistors included in the pixel circuit of sub-pixel 110a may be located within sub-pixel 110b shown in FIG. 1A, or some or all may be located outside sub-pixel 110a.
  • the aperture ratios of the subpixels 110a, 110b, and 110c are equal or substantially equal (it can be said that the sizes of the light-emitting regions are equal or substantially equal), but one embodiment of the present invention is limited to this. not.
  • the aperture ratios of the sub-pixel 110a, the sub-pixel 110b, and the sub-pixel 110c can be determined as appropriate.
  • the sub-pixel 110a, the sub-pixel 110b, and the sub-pixel 110c may have different aperture ratios, and two or more of them may have the same or substantially the same aperture ratio.
  • a stripe arrangement is applied to the pixels 110 shown in FIG. 1A.
  • the pixel 110 shown in FIG. 1A is composed of three sub-pixels: sub-pixel 110a, sub-pixel 110b, and sub-pixel 110c.
  • Sub-pixel 110a, sub-pixel 110b, and sub-pixel 110c have light-emitting devices with different emission colors.
  • sub-pixels 110a, 110b, and 110c there are three sub-pixels of red (R), green (G), and blue (B), and three sub-pixels of yellow (Y), cyan (C), and magenta (M). Color sub-pixels and the like are included.
  • the number of types of sub-pixels is not limited to three, and may be four or more.
  • the four sub-pixels are R, G, B, and white (W) sub-pixels, R, G, B, and Y sub-pixels, and R, G, B, and infrared light (IR). 4 color sub-pixels.
  • the row direction is sometimes called the X direction
  • the column direction is sometimes called the Y direction.
  • the X and Y directions intersect, for example perpendicularly (see FIG. 1A).
  • FIG. 1A shows an example in which sub-pixels of different colors are arranged side by side in the X direction and sub-pixels of the same color are arranged side by side in the Y direction.
  • FIG. 1A shows an example in which the connecting portion 140 is positioned below the pixel portion 105 in top view, but the position of the connecting portion 140 is not particularly limited.
  • the connection portion 140 may be provided on at least one of the upper side, the right side, the left side, and the lower side of the pixel portion 105 when viewed from above, and may be provided so as to surround the four sides of the pixel portion 105 .
  • the shape of the upper surface of the connecting portion 140 can be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like.
  • the number of connection parts 140 may be singular or plural.
  • FIG. 1B shows a cross-sectional view along the dashed-dotted line X1-X2 in FIG. 1A. An enlarged view of a portion of the cross-sectional view shown in FIG. 1B is shown in FIG. 2A.
  • the display device 100 includes the light emitting device 130a, the light emitting device 130b, and the light emitting device 130c on the layer 101, and the light emitting device 130a, the light emitting device 130b, and the light emitting device 130c.
  • a layer 122 bonds substrates 120 together.
  • a protective layer 131 may be provided to cover the light emitting devices 130 a , 130 b , and 130 c , and the substrate 120 may be bonded onto the protective layer 131 with a resin layer 122 .
  • a layer 127 is also provided in the region between adjacent light emitting devices.
  • FIG. 1B shows a plurality of cross sections of the layers 127
  • the layers 127 are connected to each other. That is, the display device 100 can have a structure including one layer 127 . Note that the display device 100 may have multiple layers 127 that are separated from each other.
  • a display device of one embodiment of the present invention is a top emission type in which light is emitted in a direction opposite to a substrate over which a light-emitting device is formed, and light is emitted toward a substrate over which a light-emitting device is formed.
  • a bottom emission type bottom emission type
  • a double emission type dual emission type in which light is emitted from both sides may be used.
  • the light emitting device 130a, the light emitting device 130b, and the light emitting device 130c each emit light of different colors.
  • the combination of colors emitted by light emitting device 130a, light emitting device 130b, and light emitting device 130c can be, for example, red (R), green (G), and blue (B).
  • Each of the light-emitting device 130a, the light-emitting device 130b, and the light-emitting device 130c has a pair of electrodes and a layer sandwiched between the pair of electrodes.
  • the layer has at least a light-emitting layer.
  • one electrode functions as an anode and the other electrode functions as a cathode.
  • the case where the pixel electrode functions as an anode and the common electrode functions as a cathode may be taken as an example.
  • the light-emitting device 130a includes a pixel electrode 111a on the insulating layer 255c, a common layer 114a on the pixel electrode 111a, an island-shaped first layer 113a on the common layer 114a, and a common layer 114b on the first layer 113a. and a common electrode 115 on the common layer 114b.
  • common layer 114a, first layer 113a, and common layer 114b can be collectively referred to as EL layers.
  • the light-emitting device 130b includes a pixel electrode 111b on the insulating layer 255c, a common layer 114a on the pixel electrode 111b, an island-shaped second layer 113b on the common layer 114a, and a common layer 114b on the second layer 113b. and a common electrode 115 on the common layer 114b.
  • common layer 114a, second layer 113b, and common layer 114b can be collectively referred to as EL layers.
  • the light-emitting device 130c includes a pixel electrode 111c on the insulating layer 255c, a common layer 114a on the pixel electrode 111c, an island-shaped third layer 113c on the common layer 114a, and a common layer 114b on the third layer 113c. and a common electrode 115 on the common layer 114b.
  • common layer 114a, third layer 113c, and common layer 114b can be collectively referred to as EL layers.
  • a layer provided in an island shape for each light-emitting device is referred to as a first layer 113a, a second layer 113b, or a third layer 113c.
  • the layers shared by the light emitting devices are denoted as common layer 114a or common layer 114b.
  • the first layer 113a, the second layer 113b, and the third layer 113c are referred to as an island-shaped EL layer, without including the common layer 114a and the common layer 114b. It may also be called a formed EL layer or the like.
  • the letters distinguishing them may be omitted, and the light-emitting device 130 may be used.
  • the letters distinguishing them may be omitted, and the light-emitting device 130 may be used.
  • other constituent elements such as the pixel electrode 111a, the pixel electrode 111b, and the pixel electrode 111c, which are distinguished by alphabets, when describing items common to these elements, reference numerals without alphabets are used for description.
  • the first layer 113a, the second layer 113b, and the third layer 113c have at least a light-emitting layer.
  • the first layer 113a has a light-emitting layer that emits red light
  • the second layer 113b has a light-emitting layer that emits green light
  • the third layer 113c has a light-emitting layer that emits blue light.
  • a structure having layers is preferable.
  • the first layer 113a, the second layer 113b, and the third layer 113c are each provided in an island shape.
  • the first layer 113a, the second layer 113b, and the third layer 113c can each be formed using, for example, a fine metal mask (FMM, high definition metal mask).
  • FMM fine metal mask
  • FIG. 1B shows a structure in which the first layer 113a to the third layer 113c all have the same thickness; however, one embodiment of the present invention is not limited thereto.
  • Each thickness of the first layer 113a to the third layer 113c may be different.
  • a single structure (a structure having only one light emitting unit) or a tandem structure (a structure having a plurality of light emitting units) may be applied to the light emitting device of this embodiment.
  • the light-emitting unit has at least one light-emitting layer.
  • the first layer 113a, the second layer 113b, and the third layer 113c can have a structure including, for example, a first light-emitting unit, a charge generation layer, and a second light-emitting unit.
  • the first layer 113a has a plurality of light-emitting units that emit red light
  • the second layer 113b has a plurality of light-emitting units that emit green light
  • the third layer 113b has a plurality of light-emitting units that emit green light.
  • the layer 113c preferably has a plurality of light-emitting units that emit blue light.
  • Each of the common layer 114a and the common layer 114b is a series of films commonly provided for a plurality of light emitting devices.
  • Each of the common layer 114a and the common layer 114b preferably has one or more of a hole injection layer, a hole transport layer, a hole block layer, an electron block layer, an electron transport layer, and an electron injection layer.
  • common layer 114a has a hole injection layer and common layer 114b has an electron injection layer.
  • the common layer 114a may have a stack of a hole transport layer and a hole injection layer
  • the common layer 114b may have a stack of an electron transport layer and an electron injection layer. Note that a structure without the common layer 114a may be employed. Alternatively, a configuration in which the common layer 114b is not provided may be employed.
  • the first layer 113a, the second layer 113b, and the third layer 113c are respectively a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron It may have one or more of the injection layers.
  • the first layer 113a, the second layer 113b, and the third layer 113c may have a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer in this order.
  • the first layer 113a, the second layer 113b, and the third layer 113c may have an electron injection layer, an electron transport layer, a light emitting layer, and a hole transport layer in this order.
  • a hole injection layer may be provided on the hole transport layer.
  • the heat resistance temperature of each compound contained in the light-emitting device is preferably 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower. preferable.
  • heat resistant temperature indicators examples include glass transition point (Tg), softening point, melting point, thermal decomposition temperature, and 5% weight loss temperature.
  • Tg glass transition point
  • softening point melting point
  • thermal decomposition temperature thermal decomposition temperature
  • 5% weight loss temperature 5% weight loss temperature.
  • the glass transition point of the material of the layer can be used as an index of the heat resistance temperature of each layer forming the EL layer.
  • the glass transition point of the material of the layer can be used.
  • the layer is a mixed layer made of a plurality of materials
  • the glass transition point of the most abundant material can be used.
  • the lowest temperature among the glass transition points of the plurality of materials may be used.
  • the heat-resistant temperature of the light-emitting layer is high. As a result, it is possible to prevent the light-emitting layer from being damaged by heating, thereby reducing the light-emitting efficiency and shortening the life of the light-emitting layer.
  • the light-emitting layer includes a light-emitting substance (also referred to as a light-emitting organic compound, guest material, or the like) and a host material. Since the light-emitting layer contains more host material than the light-emitting substance, the Tg of the host material can be used as an index of the heat-resistant temperature of the light-emitting layer.
  • the heat resistance temperature of the compounds contained in the first layer 113a, the second layer 113b, and the third layer 113c is preferably 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, respectively. °C or higher and 180 °C or lower is more preferable.
  • the glass transition point (Tg) of these compounds is preferably 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower.
  • the functional layer provided above the light-emitting layer and the functional layer provided below the light-emitting layer each have a high heat resistance temperature. Since the functional layer has high heat resistance, the light-emitting layer can be effectively protected, and damage to the light-emitting layer can be reduced.
  • the heat resistance temperature of the compounds contained in the common layer 114a and the common layer 114b is preferably 100°C or higher and 180°C or lower, preferably 120°C or higher and 180°C or lower, and more preferably 140°C or higher and 180°C or lower.
  • the glass transition point (Tg) of these compounds is preferably 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower.
  • the reliability of the light-emitting device can be improved.
  • the width of the temperature range in the manufacturing process of the display device can be widened, and the manufacturing yield and reliability can be improved.
  • an electrode to which a conductive film that transmits visible light is applied (also referred to as a transparent electrode) is used on the light extraction side.
  • An electrode (also referred to as a reflective electrode) to which a conductive film that reflects visible light is applied is preferably used on the side from which light is not extracted.
  • an electrode (transparent electrode) to which a conductive film that transmits visible light and infrared light is applied is used on the light extraction side to extract light. It is preferable to use an electrode (reflective electrode) to which a conductive film that reflects visible light and infrared light is applied on the non-light side.
  • a conductive film that transmits visible light may also be used for the electrode on the side that does not take out light.
  • a conductive film that transmits visible light is preferably provided between the conductive film that reflects visible light (also referred to as a reflective layer) and the EL layer. That is, the light emitted from the EL layer may be reflected by the reflective layer and extracted from the display device.
  • Metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be appropriately used as materials for forming the pair of electrodes of the light-emitting device.
  • Specific examples of such materials include aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, and yttrium. , metals such as neodymium, and alloys containing these in appropriate combinations.
  • examples of such materials include indium tin oxide (In—Sn oxide, also referred to as ITO), In—Si—Sn oxide (also referred to as ITSO), indium zinc oxide (In—Zn oxide), and In— W—Zn oxide and the like can be mentioned.
  • an alloy containing aluminum (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), an alloy of silver and magnesium, and an alloy of silver, palladium and copper ( silver-containing alloys such as Ag--Pd--Cu, also referred to as APC).
  • elements belonging to Group 1 or Group 2 of the periodic table of elements not exemplified above e.g., lithium, cesium, calcium, strontium
  • europium e.g., europium
  • rare earth metals such as ytterbium, and appropriate combinations thereof alloys, graphene, and the like.
  • a micro optical resonator (microcavity) structure is preferably applied to the light emitting device. Therefore, one of the pair of electrodes included in the light-emitting device is preferably an electrode (semi-transmissive/semi-reflective electrode) that is transparent and reflective to visible light, and the other is reflective to visible light. It is preferably an electrode (reflective electrode). Since the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting device can be enhanced.
  • the light transmittance of the transparent electrode is set to 40% or more.
  • an electrode having a transmittance of 40% or more for visible light (light having a wavelength of 400 nm or more and less than 750 nm) as the transparent electrode of the light emitting device.
  • the visible light reflectance of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
  • the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less.
  • the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the common electrode 115 is a continuous film provided in common for a plurality of light emitting devices.
  • the common electrode 115 can use the above materials.
  • the common electrode 115 preferably has a laminated structure.
  • FIG. 1B shows an example in which the common electrode 115 has a laminated structure of a conductive layer 115a, a conductive layer 115b on the conductive layer 115a, and a conductive layer 115c on the conductive layer 115b.
  • the conductive layer 115a is a first common electrode
  • the conductive layer 115b is a second common electrode
  • the conductive layer 115c is a third common electrode.
  • a conductive layer 115a is provided to cover the EL layer (here, the common layer 114b), and a conductive layer 115b is provided to cover the conductive layer 115a.
  • a layer 127 is provided over the conductive layer 115b so as to fill the recesses between adjacent light emitting devices.
  • a conductive layer 115 c is provided over the conductive layer 115 b and the layer 127 .
  • the conductive layer 115c is in contact with the conductive layer 115b in a region overlapping with the pixel electrode 111a, a region overlapping with the pixel electrode 111b, and a region overlapping with the pixel electrode 111c.
  • the above materials can be used for each of the conductive layers 115a, 115b, and 115c.
  • the common electrode 115 is a semi-transmissive/semi-reflective electrode
  • one or more of the conductive layer 115a, the conductive layer 115b, and the conductive layer 115c is applied with a conductive layer having a property of transmitting and reflecting visible light. Then, a conductive layer having transparency to visible light may be applied.
  • the conductive layer 115a provided in contact with the EL layer is preferably a conductive layer that transmits and reflects visible light.
  • Each of the conductive layers 115b and 115c can be a conductive layer that transmits visible light.
  • An alloy of silver and magnesium, for example, can be preferably used for the conductive layer 115a.
  • ITO In--Sn oxide
  • ISO In--Si--Sn oxide
  • the common electrode 115 is a transparent electrode
  • all of the conductive layers 115a, 115b, and 115c are conductive layers that reflect visible light.
  • the same material or different materials may be applied to the conductive layers 115a, 115b, and 115c.
  • the common electrode 115 is a reflective electrode
  • a conductive layer that reflects visible light is applied to one or more of the conductive layers 115a, 115b, and 115c.
  • the conductive layer 115a provided in contact with the EL layer is preferably a conductive layer that reflects visible light.
  • Aluminum or an alloy containing aluminum, for example, can be preferably used for the conductive layer 115a.
  • Each of the conductive layers 115b and 115c may be a conductive layer that transmits visible light or a conductive layer that is reflective. The same material or different materials may be applied to the conductive layers 115b and 115c.
  • the conductive layer 115b preferably uses a material that is more resistant to oxidation than the conductive layer 115a.
  • the conductive layer 115b is preferably provided so as to cover the conductive layer 115a. If the conductive layer 115b is not provided, the conductive layer 115a might be oxidized in the step of forming the layer 127, for example. In addition, there is a possibility that the metal component contained in the conductive layer 115a is deposited. By covering the conductive layer 115a with the conductive layer 115b, oxidation of the conductive layer 115a can be suppressed.
  • An oxide is preferably used for the conductive layer 115b.
  • ITO In--Sn oxide
  • ITSO In--Si--Sn oxide
  • the conductive layer 115b has recesses resulting from areas where the pixel electrodes 111 are not provided.
  • a layer 127 is embedded in the recess.
  • the layer 127 is provided on the conductive layer 115b so as to fill the recesses formed in the conductive layer 115b.
  • the layer 127 overlaps with part of the top surface and side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c with the common layer 114b, the conductive layer 115a, and the conductive layer 115b interposed therebetween. can do.
  • Layer 127 preferably covers at least a portion of the top surface of conductive layer 115b.
  • the layer 127 By providing the layer 127, the space between the adjacent light-emitting devices can be filled, so that the surface on which the conductive layer 115c is formed can be made flatter by reducing unevenness. Therefore, the coverage of the conductive layer 115c can be improved.
  • the conductive layer 115 c is provided over the conductive layer 115 b and the layer 127 .
  • a step is generated due to a region where the pixel electrode is provided and a region where the pixel electrode is not provided (region between the light emitting devices).
  • a concave portion is formed in a region where no pixel electrode is provided.
  • the layer 127 is provided over the conductive layer 115b so as to fill the recess, so that a step between adjacent light-emitting devices can be reduced and the coverage of the conductive layer 115c can be improved. can be done.
  • discontinuity refers to a phenomenon in which a layer, film, or electrode is divided due to the shape of the formation surface (for example, a step).
  • the formation surfaces of the conductive layers 115a and 115b have larger unevenness than the conductive layer 115c, so that the conductive layers 115a and 115b may have discontinuities or be locally thin.
  • the conductive layer 115c can be formed with high coverage; Also, poor connection of the common electrode 115 and an increase in electrical resistance can be suppressed.
  • FIG. 1B shows a structure in which the layer 127 is provided in contact with the conductive layer 115b
  • Layer 127 may have a region in contact with conductive layer 115a.
  • conductive layer 115b is discontinued in a recess between light emitting devices
  • layer 127 may be in contact with conductive layer 115a in the region of the discontinuity.
  • the EL layer is preferably covered with one or both of the conductive layer 115a and the conductive layer 115b. By covering the EL layer with one or both of the conductive layers 115a and 115b, the EL layer can be prevented from being damaged when the layer 127 is formed.
  • the upper surface of the layer 127 preferably has a more flat shape, but may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.
  • the top surface of the layer 127 preferably has a highly flat and smooth convex curved shape.
  • the conductivity of the layer 127 is not particularly limited, and may be an insulating layer or a conductive layer. Note that when the layer 127 is a conductive layer, the layer 127 can function as part of a common electrode.
  • the layer 127 can use one or both of an organic material and an inorganic material.
  • An organic material can be preferably used for the layer 127 .
  • the organic material it is preferable to use a photosensitive organic resin, for example, it is preferable to use a photosensitive resin composition containing an acrylic resin.
  • acrylic resin does not only refer to polymethacrylate esters or methacrylic resins, but may refer to all acrylic polymers in a broad sense.
  • an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimideamide resin, a silicone resin, a siloxane resin, a benzocyclobutene resin, a phenol resin, precursors of these resins, or the like may be used.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.
  • PVA polyvinyl alcohol
  • polyvinyl butyral polyvinylpyrrolidone
  • polyethylene glycol polyglycerin
  • pullulan water-soluble cellulose
  • the photosensitive organic resin either a positive material or a negative material may be used.
  • a material that absorbs visible light may be used for the layer 127 . Since the layer 127 absorbs light emitted from the light emitting device, leakage of light (stray light) from the light emitting device to an adjacent light emitting device through the layer 127 can be suppressed. Thereby, the display quality of the display device can be improved. In addition, since the display quality can be improved without using a polarizing plate for the display device, the weight and thickness of the display device can be reduced.
  • Materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used for color filters (color filter materials). is mentioned.
  • resin material in which two or more color filter materials are mixed, because the effect of shielding visible light can be enhanced.
  • color filter materials of three or more colors
  • the layer 127 may be formed by stacking layers using these materials.
  • a conductive layer 115c is provided to cover the layer 127 and the conductive layer 115b.
  • the conductive layer 115c it is preferable to use a material that has high adhesion to the formation surface of the conductive layer 115c (here, the layer 127 and the conductive layer 115b). Accordingly, peeling of the conductive layer 115c can be suppressed.
  • each side surface of the pixel electrode 111a, the pixel electrode 111b, and the pixel electrode 111c is preferably tapered.
  • the angle formed by each side surface of the pixel electrode 111a, the pixel electrode 111b, and the pixel electrode 111c and the formation surface is preferably less than 90°.
  • a display device which is one embodiment of the present invention does not have an insulating layer between the pixel electrode and the EL layer so as to cover the edge of the top surface of the pixel electrode.
  • no insulating layer is provided between the pixel electrode 111a and the common layer 114a to cover the edge of the upper surface of the pixel electrode 111a.
  • no insulating layer is provided between the pixel electrode 111b and the common layer 114a to cover the edge of the upper surface of the pixel electrode 111b. Therefore, the interval between adjacent light emitting devices can be made very narrow. Therefore, a high-definition or high-resolution display device can be obtained.
  • a structure in which an insulating layer covering the end of the pixel electrode is not provided between the pixel electrode and the EL layer in other words, a structure in which an insulating layer is not provided between the pixel electrode and the EL layer is used. Emission from the layer can be extracted efficiently. Therefore, the viewing angle dependency of the display device of one embodiment of the present invention can be extremely reduced. By reducing the viewing angle dependency, it is possible to improve the visibility of the image on the display device.
  • the first layer 113a preferably covers the edge of the pixel electrode 111a.
  • the edge of the first layer 113a is located outside the edge of the pixel electrode 111a.
  • the end of the first layer 113a is located in a region that does not overlap with the pixel electrode 111a.
  • the entire upper surface of the pixel electrode can be used as a light emitting region, and compared to a structure in which the end of the first layer 113a is positioned inside the end of the pixel electrode 111a, It becomes easy to increase the aperture ratio.
  • a region of the first layer 113a that does not overlap with the pixel electrode 111a can be said to be a region that does not contribute or contributes little to light emission.
  • the pixel electrode 111a and the first layer 113a are described here as an example, the same applies to the pixel electrode 111b and the second layer 113b, and the pixel electrode 111c and the third layer 113c. .
  • the reliability of the display device can be improved by increasing the aperture ratio of the display device. More specifically, when the lifetime of a display device using an organic EL device and having an aperture ratio of 10% is used as a reference, the life of the display device has an aperture ratio of 20% (that is, the aperture ratio is twice the reference). The life is about 3.25 times longer, and the life of a display device with an aperture ratio of 40% (that is, the aperture ratio is four times the reference) is about 10.6 times longer. As described above, the current density flowing through the organic EL device can be reduced as the aperture ratio is improved, so that the life of the display device can be extended. Since the aperture ratio of the display device of one embodiment of the present invention can be improved, the display quality of the display device can be improved. Further, as the aperture ratio of the display device is improved, the reliability (especially life) of the display device is significantly improved, which is an excellent effect.
  • the light-emitting region of the light-emitting device (that is, the region where the pixel electrode overlaps with the first layer 113a, the second layer 113b, and the third layer 113c), the first layer 113a, the second layer 113b, and the third layer 113b. , the distance from the edge of the layer 113c can be increased.
  • the film thickness of the end portions of the first layer 113a, the second layer 113b, and the third layer 113c and the vicinity thereof may be thinner than the inner region. Therefore, by using the regions apart from the end portions of the first layer 113a, the second layer 113b, and the third layer 113c as the light emitting regions, variations in the characteristics of the light emitting device can be reduced.
  • FIG. 1B shows an example in which a laminated structure of a common layer 114a, a first layer 113a, a common layer 114b, a conductive layer 115a, a conductive layer 115b, a layer 127, and a conductive layer 115c is positioned on the edge of the pixel electrode 111a. show.
  • a stacked structure of a common layer 114a, a second layer 113b, a common layer 114b, a conductive layer 115a, a conductive layer 115b, a layer 127, and a conductive layer 115c is positioned over the edge of the pixel electrode 111b.
  • a stacked structure of a common layer 114a, a third layer 113c, a common layer 114b, a conductive layer 115a, a conductive layer 115b, a layer 127, and a conductive layer 115c is positioned over an end portion of the pixel electrode 111c.
  • FIG. 2A is an enlarged cross-sectional view of a region including layer 127 and its periphery between light emitting devices 130a and 130b.
  • the layer 127 between the light emitting device 130a and the light emitting device 130b will be described as an example. The same can be said for etc.
  • a common layer 114a is provided covering the pixel electrodes 111a and 111b.
  • a first layer 113a and a second layer 113b are provided over the common layer 114a.
  • a common layer 114b is provided over the first layer 113a and the second layer 113b.
  • the first layer 113a may have a region in contact with the adjacent second layer 113b.
  • FIG. 2A shows an example in which the second layer 113b is provided so as to cover the edge of the first layer 113a and its vicinity.
  • the second layer 113b can be formed so as to cover the edge of the first layer 113a and its vicinity.
  • the formation order of the first layer 113a, the second layer 113b, and the third layer 113c is not particularly limited.
  • the first layer 113a may be formed so as to cover the edge of the second layer 113b and its vicinity.
  • the first layer 113a may be formed after the formation of the third layer 113c, or the first layer 113a may be formed before the formation of the third layer 113c.
  • Each of the first layer 113a, the second layer 113b, and the third layer 113c may have a region in contact with the adjacent first layer 113a, second layer 113b, or third layer 113c. . It can be said that the first layer 113a, the second layer 113b, and the third layer 113c each have a region that overlaps with the adjacent first layer 113a, the second layer 113b, or the third layer 113c. Whether the first layer 113a, the second layer 113b, and the third layer 113c adjacent to each other have overlapping regions can be confirmed by using a photoluminescence (PL) method, for example.
  • PL photoluminescence
  • each side surface of the first layer 113a, the second layer 113b, and the third layer 113c is preferably tapered.
  • the angles formed by the side surfaces of each of the first layer 113a, the second layer 113b, and the third layer 113c and the formation surface are preferably less than 90°.
  • FIG. 2A shows the angle ⁇ 1 between the side surface of the first layer 113a and the top surface of the common layer 114a, which is the surface on which the first layer 113a is formed. Also shown is an angle ⁇ 2 formed between the side surface of the second layer 113b and the top surface and side surface of the first layer 113a, which is the surface on which the second layer 113b is formed.
  • the angle ⁇ 1 is preferably less than 90°, more preferably 60° or less, further preferably 45° or less, further preferably 20° or less.
  • the angle ⁇ 2 is preferably less than 90°, more preferably 60° or less, further preferably 45° or less, further preferably 20° or less.
  • the first layer 113a, the second layer 113b, and the third layer 113c can each be formed using, for example, a fine metal mask.
  • the thickness of the first layer 113a, the second layer 113b, and the third layer 113c, which are formed using a fine metal mask, becomes thinner toward the end, and the angle between the side surface and the formation surface ( For example, the angles ⁇ 1 and ⁇ 2) may be very small. Therefore, in each of the first layer 113a, the second layer 113b, and the third layer 113c, the side surface of the layer formed earlier and the upper surface of the layer formed later are continuously connected, and the side surface of the layer formed earlier is connected to the upper surface of the layer formed later. It may be difficult to clearly distinguish between the upper surface of the layer formed later and the upper surface of the later formed layer.
  • a layer 127 is provided in contact with part of the upper surface of the conductive layer 115b.
  • a conductive layer 115 c is provided over the conductive layer 115 b and the layer 127 .
  • the side surface of the layer 127 is preferably tapered. Specifically, the angle between the side surface of the layer 127 and the formation surface is preferably less than 90°. By tapering the side surface of the layer 127, coverage with the conductive layer 115c provided over the layer 127 can be improved.
  • FIG. 2A shows an angle ⁇ 3 formed between the side surface of the layer 127 and the top surface of the conductive layer 115b on which the layer 127 is formed.
  • the angle ⁇ 3 is preferably less than 90°, more preferably 60° or less, further preferably 45° or less, further preferably 20° or less. With such a tapered side surface of the layer 127, coverage of the conductive layer 115c provided over the layer 127 can be improved.
  • the upper surface of the layer 127 preferably has a convex shape.
  • the convex curved surface shape of the upper surface of the layer 127 is preferably a shape that gently bulges toward the center.
  • the convex curved surface portion in the central portion of the upper surface of the layer 127 has a shape that is continuously connected to the tapered portion at the end portion.
  • the top surface of layer 127 may have a concave surface shape.
  • the upper surface of the layer 127 has a shape that gently bulges toward the center, that is, a convex surface, and a shape that is depressed at and near the center, that is, a concave surface.
  • the convex curved surface portion of the upper surface of the layer 127 has a shape that is continuously connected to the tapered portion of the end portion. Even when the layer 127 has such a shape, the conductive layer 115 c can be formed with high coverage over the entire layer 127 .
  • the stress of the layer 127 may be relieved by configuring the layer 127 to have a concave curved surface in its central portion. More specifically, the layer 127 has a concave curved surface in its central portion, thereby relieving local stress generated at the end portion of the layer 127 and suppressing separation of the layer 127 from the conductive layer 115b. can do.
  • a method of exposing using a multi-tone mask can be applied to form a structure having a concave curved surface in the central portion of the layer 127 as shown in FIG. 2B.
  • a multi-tone mask is a mask that can perform exposure at three exposure levels, an exposed portion, an intermediate exposed portion, and an unexposed portion, and is an exposure mask in which transmitted light has a plurality of intensities.
  • a layer 127 having a plurality of (typically two) thickness regions can be formed with one photomask (single exposure and development steps).
  • a method of making the line width of the mask at the position where the concave curved surface is formed smaller than the line width of the exposed portion can also be used. This allows the formation of layer 127 having multiple regions with different thicknesses.
  • the method of forming the concave curved surface in the central portion of the layer 127 is not limited to the above.
  • an exposed portion and an intermediately exposed portion may be separately manufactured using two photomasks.
  • the viscosity of the resin material used for the layer 127 may be adjusted.
  • the viscosity of the material used for the layer 127 may be 10 cP or less, preferably 1 cP or more and 5 cP or less.
  • the central concave surface of the layer 127 does not necessarily have to be continuous, and may be discontinued between adjacent light emitting devices. In this case, a part of the layer 127 disappears at the central portion of the layer 127 shown in FIG. 2B, and the surface of the conductive layer 115b is exposed. In the case of such a structure, the conductive layer 115b may be shaped so as to be covered with the conductive layer 115c.
  • the layer 127 has a concave surface shape (also referred to as a constricted portion, concave portion, dent, depression, etc.) on the side surface is shown.
  • the side surface of the layer 127 may be formed into a concave curved shape.
  • one end of the layer 127 overlaps the top surface of the pixel electrode 111a and the other end of the layer 127 overlaps the top surface of the pixel electrode 111b.
  • the end portion of the layer 127 can be formed over a substantially flat region of the conductive layer 115b. This facilitates formation of the layer 127 having tapered side surfaces.
  • the smaller the area of the portion where the upper surface of the pixel electrode and the layer 127 overlap the wider the light emitting region of the light emitting device, which is preferable because the aperture ratio can be increased.
  • the layer 127 does not have to overlap the upper surface of the pixel electrode. As shown in FIG. 3B, the layer 127 may be provided in a region sandwiched between the pixel electrodes 111a and 111b without overlapping the pixel electrodes. By providing the layer 127 in a region that does not overlap with the top surface of the pixel electrode, the light-emitting region of the light-emitting device can be widened and the aperture ratio can be increased. Note that even with such a structure, the unevenness of the surface on which the conductive layer 115c is formed can be reduced and the coverage of the conductive layer 115c can be improved as compared with a structure in which the layer 127 is not provided.
  • the coverage of the conductive layer 115c can be improved, and it is possible to prevent the formation of portions divided by the common electrode 115 and locally thin portions. Therefore, it is possible to suppress the occurrence of poor connection due to portions separated by the common electrode 115 and an increase in electrical resistance due to portions where the film thickness is locally thin. Accordingly, the display quality of the display device according to one embodiment of the present invention can be improved.
  • the common electrode 115 is electrically connected to the conductive layer 123 provided in the connecting portion 140 .
  • the conductive layer 123 a conductive layer formed using the same material as the pixel electrodes 111a, 111b, and 111c is preferably used.
  • the conductive layer 123 can be formed in the same process as the pixel electrodes 111a, 111b, and 111c.
  • the common layer 114a is provided on the conductive layer 123
  • the common layer 114b is provided on the common layer 114a
  • the common electrode 115 (the conductive layer 115a, the conductive layer 115b, and the conductive layer 115b is provided on the common layer 114b).
  • 115c is provided.
  • the conductive layer 123 is electrically connected to the common electrode 115 via the common layers 114a and 114b. Note that one or both of the common layer 114a and the common layer 114b may not be provided in the connection portion 140.
  • FIG. In FIG. 4B the conductive layer 123 is directly connected to the common electrode 115 without providing the common layer 114a and the common layer 114b.
  • the common layer 114a, the common layer 114b, and the common electrode 115 are formed by using a mask for defining a film formation area (also called an area mask, a rough metal mask, or the like to be distinguished from a fine metal mask). can be different.
  • Layer 101 preferably includes pixel circuits that function to control light emitting device 130a, light emitting device 130b, and light emitting device 130c.
  • a pixel circuit can have a structure including a transistor, a capacitor, and a wiring, for example.
  • the layer 101 may have one or both of a gate line driver circuit (gate driver) and a source line driver circuit (source driver) in addition to the pixel circuit.
  • Layer 101 may further include one or both of arithmetic circuitry and memory circuitry.
  • the layer 101 can have a structure in which a pixel circuit is provided on a semiconductor substrate or an insulating substrate.
  • a semiconductor substrate a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium or the like, an SOI substrate, or the like can be used.
  • a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate can be used as the insulating substrate.
  • the shape of the semiconductor substrate and the insulating substrate may be circular or rectangular.
  • a substrate having heat resistance that can withstand at least later heat treatment can be used.
  • FIG. 1B for the layer 101, for example, a laminated structure of a substrate 102 provided with a plurality of transistors and an insulating layer provided to cover these transistors can be applied.
  • An insulating layer over a transistor may have a single-layer structure or a stacked-layer structure.
  • FIG. 1B shows an insulating layer 255a, an insulating layer 255b over the insulating layer 255a, and an insulating layer 255c over the insulating layer 255b as insulating layers over the transistor.
  • These insulating layers may have recesses between adjacent light emitting devices.
  • FIG. 1B and the like show an example in which a concave portion is provided in the insulating layer 255c. Note that the insulating layer 255c may not have recesses between adjacent light emitting devices.
  • the end of the insulating layer 255c preferably has a tapered shape with a taper angle of less than 90°. Accordingly, coverage with a layer provided over the insulating layer 255c can be improved.
  • FIG. 1B and the like a configuration in which a part of the shape of the concave portion provided in the insulating layer 255c has the same taper angle as the taper shape of the pixel electrode 111a, the pixel electrode 111b, and the pixel electrode 111c is illustrated. It is not limited to this.
  • the tapered shape of the pixel electrode 111a, the pixel electrode 111b, and the pixel electrode 111c may be different from the tapered shape of the recess formed in the insulating layer 255c.
  • Various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film can be preferably used for each of the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c.
  • An oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film is preferably used for each of the insulating layers 255a and 255c.
  • a nitride insulating film such as a silicon nitride film or a silicon nitride oxide film or a nitride oxide insulating film is preferably used for the insulating layer 255b. More specifically, a silicon oxide film is preferably used for the insulating layers 255a and 255c, and a silicon nitride film is preferably used for the insulating layer 255b.
  • the insulating layer 255b preferably functions as an etching protection film.
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen. indicates
  • the protective layer 131 may have a single layer structure or a laminated structure of two or more layers.
  • the conductivity of the protective layer 131 does not matter. At least one of an insulating film, a semiconductor film, and a conductive film can be used as the protective layer 131 .
  • the protective layer 131 has an inorganic film
  • the common electrode 115 is prevented from being oxidized, impurities (moisture, oxygen, etc.) are prevented from entering the light emitting device, and deterioration of the light emitting device is suppressed.
  • the reliability of the display device can be improved.
  • the protective layer 131 inorganic insulating films such as oxide insulating films, nitride insulating films, oxynitride insulating films, and oxynitride insulating films can be used. Specific examples of these inorganic insulating films are as described above.
  • the protective layer 131 preferably includes a nitride insulating film or a nitride oxide insulating film, and more preferably includes a nitride insulating film.
  • the protective layer 131 includes In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, or indium gallium zinc oxide (In—Ga—Zn oxide, An inorganic film containing IGZO) or the like can also be used.
  • the inorganic film preferably has a high resistance, and specifically, preferably has a higher resistance than the common electrode 115 .
  • the inorganic film may further contain nitrogen.
  • the protective layer 131 When the light emitted from the light-emitting device is taken out through the protective layer 131, the protective layer 131 preferably has high transparency to visible light.
  • the protective layer 131 preferably has high transparency to visible light.
  • ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials with high transparency to visible light.
  • the protective layer 131 for example, a stacked structure of an aluminum oxide film and a silicon nitride film over the aluminum oxide film, a stacked structure of an aluminum oxide film and an IGZO film over the aluminum oxide film, or the like can be used. can. By using the stacked structure, entry of impurities (such as water and oxygen) into the EL layer can be suppressed.
  • impurities such as water and oxygen
  • the protective layer 131 may have an organic film.
  • protective layer 131 may have both an organic film and an inorganic film.
  • organic materials that can be used for the protective layer 131 include organic insulating materials that can be used for the layer 127 .
  • the protective layer 131 may have a two-layer structure formed using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed using the ALD method, and the second layer of the protective layer 131 may be formed using the sputtering method.
  • a light shielding layer may be provided on the surface of the substrate 120 on the resin layer 122 side.
  • various optical members can be arranged outside the substrate 120 .
  • optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a light collecting film.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. Layers may be arranged.
  • the surface protective layer may be made of DLC (diamond-like carbon), aluminum oxide (AlO x ), polyester-based material, polycarbonate-based material, or the like.
  • a material having a high visible light transmittance is preferably used for the surface protective layer.
  • Glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc. can be used for the substrate 120 .
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting device is extracted.
  • Using a flexible material for the substrate 120 can increase the flexibility of the display device.
  • a polarizing plate may be used as the substrate 120 .
  • the substrate 120 is made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethylmethacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, Polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS A resin, cellulose nanofiber, or the like can be used.
  • polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethylmethacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, Polyamide resin
  • a substrate having high optical isotropy has small birefringence (it can be said that the amount of birefringence is small).
  • the absolute value of the retardation (retardation) value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.
  • Films with high optical isotropy include triacetylcellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.
  • TAC triacetylcellulose
  • COP cycloolefin polymer
  • COC cycloolefin copolymer
  • a film having a low water absorption rate as the substrate.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • These adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • FIG. 5A A cross-sectional view of a display device 100 that is one embodiment of the present invention is shown in FIG. 5A.
  • FIG. 5A is a cross-sectional view along dashed-dotted line X1-X2 in FIG. 1A.
  • An enlarged view of a portion of the cross-sectional view shown in FIG. 5A is shown in FIG. 5B.
  • FIG. 4A or 4B can be referred to for a cross-sectional view along the dashed-dotted line Y1-Y2.
  • the display device 100 shown in FIGS. 5A and 5B is different from the display device shown in ⁇ Structure Example 1> in that the adjacent first layer 113a, second layer 113b, and third layer 113c are not in contact with each other. different.
  • the upper surface and side surfaces of the first layer 113a are covered with the common layer 114b.
  • the top and side surfaces of the second layer 113b are covered with the common layer 114b.
  • the top and side surfaces of the third layer 113c are covered with the common layer 114b.
  • the common layer 114b has a region that is in contact with the common layer 114a in a region that does not overlap with any of the first layer 113a, the second layer 113b, and the third layer 113c.
  • FIG. 6A A cross-sectional view of the display device 100 which is one embodiment of the present invention is shown in FIG. 6A.
  • FIG. 6A is a cross-sectional view along dashed-dotted line X1-X2 in FIG. 1A.
  • An enlarged view of a portion of the cross-sectional view shown in FIG. 6A is shown in FIG. 6B.
  • 7A and 7B show cross-sectional views along the dashed-dotted line Y1-Y2.
  • the display device 100 shown in FIGS. 6A and 6B is mainly different from the display device shown in ⁇ Configuration Example 1> in that the common electrode 115 does not have the conductive layer 115b.
  • the common electrode 115 has a laminated structure of a conductive layer 115a and a conductive layer 115c on the conductive layer 115a.
  • a conductive layer 115a is provided to cover the EL layer (here, the common layer 114b), and a layer 127 is provided over the conductive layer 115a to fill the recesses between adjacent light emitting devices.
  • a conductive layer 115 c is provided over the conductive layer 115 a and the layer 127 .
  • the conductive layer 115c is in contact with the conductive layer 115a in a region overlapping with the pixel electrode 111a, a region overlapping with the pixel electrode 111b, and a region overlapping with the pixel electrode 111c.
  • the layer 127 can be formed over the conductive layer 115a.
  • the manufacturing cost of the display device can be reduced.
  • the common layer 114a is provided on the conductive layer 123
  • the common layer 114b is provided on the common layer 114a
  • the conductive layer 115a is provided on the common layer 114b
  • the conductive layer 115a is provided on the common layer 114b.
  • a conductive layer 115c is provided over 115a. Note that one or both of the common layer 114a and the common layer 114b may not be provided in the connection portion 140.
  • FIG. As shown in FIG. 7B, the conductive layer 123 may be directly connected to the common electrode 115 (the conductive layer 115a and the conductive layer 115c) without providing the common layer 114a and the common layer 114b.
  • the configuration of the common electrode 115 shown in ⁇ configuration example 3> can also be applied to other configuration examples.
  • FIG. 8A A top view of the display device 100 which is one embodiment of the present invention is shown in FIG. 8A.
  • a pixel 110 shown in FIG. 8A is composed of four types of sub-pixels: a sub-pixel 110a, a sub-pixel 110b, a sub-pixel 110c, and a sub-pixel 110d.
  • the sub-pixel 110a, the sub-pixel 110b, the sub-pixel 110c, and the sub-pixel 110d can be configured to have light-emitting devices with different emission colors.
  • sub-pixels 110a, 110b, 110c, and 110d sub-pixels of four colors of R, G, B, and W, sub-pixels of four colors of R, G, B, and Y, and
  • four sub-pixels of R, G, B, and IR may be used.
  • a display device of one embodiment of the present invention may include a light-receiving device in a pixel.
  • three may be configured with light-emitting devices, and the remaining one may be configured with light-receiving devices.
  • a pn-type or pin-type photodiode can be used as the light receiving device.
  • a light-receiving device functions as a photoelectric conversion device (also referred to as a photoelectric conversion element) that detects light incident on the light-receiving device and generates an electric charge. The amount of charge generated from the light receiving device is determined based on the amount of light incident on the light receiving device.
  • the light receiving device can detect one or both of visible light and infrared light.
  • visible light for example, one or more of colors such as blue, purple, violet, green, yellow-green, yellow, orange, and red can be detected.
  • infrared light it is possible to detect an object even in a dark place, which is preferable.
  • organic photodiode having a layer containing an organic compound as the light receiving device.
  • Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so that they can be applied to various display devices.
  • an organic EL device is used as the light emitting device and an organic photodiode is used as the light receiving device.
  • An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
  • Embodiment 6 can be referred to for the configuration and materials of the light receiving device.
  • FIG. 8B A cross-sectional view between dashed line X3-X4 in FIG. 8A is shown in FIG. 8B. It should be noted that FIG. 1B can be referred to for the cross-sectional view along the dashed-dotted line X1-X2 in FIG. 8A, and FIG. 4A or 4B can be referred to for the cross-sectional view along the dashed-dotted line Y1-Y2.
  • the display device 100 has a light-emitting device 130a and a light-receiving device 150 provided on the layer 101, and a substrate 120 is attached to the light-emitting device and the light-receiving device with a resin layer 122.
  • a protective layer 131 may be provided to cover the light emitting device 130 a and the light receiving device 150 , and the substrate 120 may be bonded onto the protective layer 131 with a resin layer 122 .
  • a layer 127 is provided in the region between adjacent light-emitting devices and light-receiving devices.
  • a layer 127 is also preferably provided in the regions between adjacent light receiving devices.
  • FIG. 8B shows an example in which the light emitting device 130a emits light toward the substrate 120 side, and light enters the light receiving device 150 from the substrate 120 side (see light Lem and light Lin).
  • the configuration of the light emitting device 130a is as described above.
  • the light receiving device 150 includes a pixel electrode 111d on the insulating layer 255c, a fourth layer 113d on the pixel electrode 111d, a common layer 114b on the fourth layer 113d, and a common electrode 115 on the common layer 114b. have.
  • the fourth layer 113d includes at least the active layer.
  • the fourth layer 113d includes at least an active layer.
  • the fourth layer 113d may further have functional layers.
  • functional layers include carrier transport layers (hole transport layer and electron transport layer) and carrier block layers (hole block layer and electron block layer).
  • the fourth layer 113d has an active layer and a carrier-blocking layer (hole-blocking layer or electron-blocking layer) or a carrier-transporting layer (electron-transporting layer or hole-transporting layer) on the active layer.
  • the fourth layer 113d is a layer provided in the light receiving device 150 and not provided in the light emitting device.
  • the functional layers other than the active layer included in the fourth layer 113d may have the same material as the functional layers other than the light-emitting layers included in the first to third layers 113a to 113c.
  • common layer 114a and common layer 114b are a sequence of layers shared by the light emitting device and the light receiving device.
  • a layer shared by the light-receiving device and the light-emitting device may have different functions in light-emitting devices than in light-receiving devices.
  • Components are sometimes referred to herein based on their function in the light emitting device.
  • a hole-injecting layer functions as a hole-injecting layer in light-emitting devices and as a hole-transporting layer in light-receiving devices.
  • an electron-injecting layer functions as an electron-injecting layer in light-emitting devices and as an electron-transporting layer in light-receiving devices.
  • a layer shared by the light-receiving device and the light-emitting device may have the same function in the light-emitting device as in the light-receiving device.
  • a hole-transporting layer functions as a hole-transporting layer in both a light-emitting device and a light-receiving device
  • an electron-transporting layer functions as an electron-transporting layer in both a light-emitting device and a light-receiving device.
  • the first layer 113a may have a region in contact with the adjacent fourth layer 113d.
  • FIG. 8B shows an example in which a fourth layer 113d is provided so as to cover the edge of the first layer 113a and its vicinity.
  • the fourth layer 113d can be formed so as to cover the edge of the first layer 113a and its vicinity.
  • the formation order of the first layer 113a, the second layer 113b, the third layer 113c, and the fourth layer 113d is not particularly limited.
  • the first layer 113a may be formed so as to cover the edge of the fourth layer 113d and its vicinity.
  • first layer 113a, the second layer 113b, the third layer 113c, and the fourth layer 113d adjacent to each other may not be in contact with each other.
  • the side surface of the fourth layer 113d is preferably tapered. Specifically, the angle between the side surface of the fourth layer 113d and the formation surface is preferably less than 90°. By tapering the side surface of the fourth layer 113d, the coverage of the common layer 114b provided on the fourth layer 113d can be improved.
  • the angle between the side surface of the fourth layer 113d and the surface on which the fourth layer 113d is formed is preferably less than 90°, more preferably 60° or less. is preferable, 45° or less is preferable, and 20° or less is more preferable.
  • a method similar to that for manufacturing a light-emitting device can be applied to manufacture a light-receiving device.
  • the configuration of the light-receiving device 150 shown in ⁇ configuration example 4> can also be applied to other configuration examples.
  • FIG. 8A shows an example in which a sub-pixel 110d has a larger aperture ratio (which can also be referred to as a size or a size of a light-emitting region or a light-receiving region) than the sub-pixels 110a, 110b, and 110c, which is one embodiment of the present invention. is not limited to this.
  • the aperture ratios of the sub-pixel 110a, the sub-pixel 110b, the sub-pixel 110c, and the sub-pixel 110d can be determined as appropriate.
  • the aperture ratios of the sub-pixel 110a, the sub-pixel 110b, the sub-pixel 110c, and the sub-pixel 110d may be different, and two or more may be equal or substantially equal.
  • the sub-pixel 110d may have a higher aperture ratio than at least one of the sub-pixels 110a, 110b, and 110c.
  • a wide light receiving area of the sub-pixel 110d may make it easier to detect an object.
  • the aperture ratio of the sub-pixel 110d may be higher than that of the other sub-pixels depending on the definition of the display device, the circuit configuration of the sub-pixels, and the like.
  • the sub-pixel 110d may have a lower aperture ratio than at least one of the sub-pixels 110a, 110b, and 110c. If the light-receiving area of the sub-pixel 110d is narrow, the imaging range is narrowed, and blurring of the imaging result can be suppressed and the resolution can be improved. Therefore, high-definition or high-resolution imaging can be performed, which is preferable.
  • the sub-pixel 110d can have a detection wavelength, definition, and aperture ratio that match the application.
  • FIG. 5 A top view of a display device 100 which is one embodiment of the present invention is shown in FIG.
  • the display device 100 shown in FIG. 9 is mainly different from the display device shown in ⁇ Configuration Example 1> in that it has an insulating layer 170 .
  • FIG. 10A shows cross-sectional views taken along dashed-dotted lines X1-X2, Y1-Y2, Z1-Z2, and Z3-Z4 in FIG.
  • An enlarged view of a portion of the cross-sectional view shown in FIG. 10A is shown in FIG. 10B.
  • the insulating layer 170 is preferably provided so as to surround the outside of the pixel section 105 and the connection section 140 .
  • the upper surface shape of the insulating layer 170 is not particularly limited, and may be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like.
  • the top surface shape of the insulating layer 170 may be a shape with rounded corners. It may also be oval or circular.
  • the insulating layer 170 may be singular or plural.
  • FIG. 9 shows an example in which the top surface shape of the insulating layer 170 is frame-shaped.
  • FIG. 11 shows an example in which four strip-shaped insulating layers 170 surround the outside of the pixel section 105 and the connection section 140 .
  • FIG. 12 shows an example in which more than four rectangular insulating layers 170 surround the outside of the pixel section 105 and the connection section 140 .
  • FIG. 9 shows an example in which the insulating layer 170 is positioned outside the pixel section 105 and the connection section 140 in top view, but the position of the insulating layer 170 is not particularly limited.
  • the insulating layer 170 may be provided inside the pixel section 105 or may be provided between the pixel section 105 and the connection section 140 .
  • the top surface of the insulating layer 170 is at least higher than the top surfaces of the first layer 113a, the second layer 113b, and the third layer 113c. is preferred.
  • the height of the top surface of a layer refers to the longest distance from the reference plane to the top surface of the layer.
  • FIG. 10B shows the height H170 of the upper surface of the insulating layer 170 and the height H113 of the upper surface of the first layer 113a.
  • the height of the top surface of the highest position among the top surfaces of the insulating layer 170 is defined as a height H170.
  • H113 be the height of the top surface of the highest position among the top surfaces of the first layer 113a, the second layer 113b, and the third layer 113c.
  • FIG. 10B shows the height H170 and the height H113 with the upper surface of the substrate 102 as a reference plane
  • the reference plane is not particularly limited.
  • the upper surface of the insulating layer 255b may be used as the reference plane.
  • the first layer 113a is formed using a fine metal mask.
  • the insulating layer 170 can function as a support layer that supports the fine metal mask. Specifically, a fine metal mask is placed so as to be in contact with the upper surface of the insulating layer 170, and the first layer 113a, the second layer 113b and the third layer 113c are formed, thereby increasing the upper surface of the common layer 114a. It is possible to suppress the contact of the fine metal mask with, for example.
  • the insulating layer 170 can also be called a partition or a spacer. Further, it is possible to prevent the fine metal mask from coming into contact with the upper surface of the first layer 113a, the second layer 113b, or the third layer 113c formed by the fine metal mask.
  • the common layer 114a is exposed when the first layer 113a is formed, the first layer 113a and the common layer 114a are exposed when the second layer 113b is formed, and the third layer 113a is exposed.
  • the first layer 113a, the second layer 113b, and the common layer 114a are exposed.
  • the fine metal mask used when forming the first layer 113a, the fine metal mask used when forming the second layer 113b, and the fine metal mask used when forming the third layer 113c are It can be in contact with any one or more of the first layer 113a, the second layer 113b, the third layer 113c, and the common layer 114a. If the fine metal mask is in contact with these layers, it can lead to differences in the properties (eg, brightness and color) of the light-emitting device between the contact areas and the non-contact surrounding areas.
  • the insulating layer 170 is provided, and the top surface height H170 of the insulating layer 170 is equal to the top surface height H113 of the first layer 113a, the second layer 113b, and the third layer 113c.
  • the fine metal mask used for forming the first layer 113a, the second layer 113b, and the third layer 113c becomes the first layer 113a, the second layer 113b, and the third layer 113b.
  • Contact with 113c and common layer 114a can be suppressed. Therefore, the display device can have high display quality.
  • the height H170 of the upper surface of the insulating layer 170 is preferably higher than the height H114b of the upper surface of the common layer 114b, and further preferably higher than the height H115b of the upper surface of the conductive layer 115b. Note that the height of the top surface of the highest position among the top surfaces of the common layer 114b is the height H114b. Similarly, the height of the upper surface of the conductive layer 115b at the highest position is assumed to be a height H115b.
  • the common layer 114a, common layer 114b, conductive layer 115a, conductive layer 115b, and conductive layer 115c can be formed using an area mask.
  • the common layer 114a, the common layer 114b, the conductive layer 115a, and the conductive layer 115b are formed using an area mask.
  • the insulating layer 170 can function as a support layer to support the area mask.
  • an organic material and an inorganic material can be used for the insulating layer 170 .
  • An organic material can be preferably used for the insulating layer 170 .
  • the organic material it is preferable to use a photosensitive organic resin, for example, it is preferable to use a photosensitive resin composition containing an acrylic resin.
  • Acrylic resin polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins may be used as the insulating layer 170.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 170 .
  • a photoresist may also be used as the photosensitive resin.
  • the photosensitive organic resin either a positive material or a negative material may be used.
  • a layer 127 s is preferably provided to cover the insulating layer 170 .
  • a material that can be used for the layer 127 can be used for the layer 127s.
  • the layer 127s can be formed through the same process as the layer 127, for example. Note that the layer 127s may be connected to the layer 127 as one. Alternatively, layer 127 s may be separate from layer 127 .
  • the layer 127s is provided over the insulating layer 170, the layer 127s is an insulating layer.
  • the layer 127s may use the same material as the insulating layer 170, or may use a different material.
  • the layer 127s When the layer 127 s is provided on the insulating layer 170 , the height H 127 of the top surface of the layer 127 s is higher than the height H 170 of the top surface of the insulating layer 170 .
  • the layer 127s can function as a supporting layer that supports the area mask when the conductive layer 115c is formed using the area mask. Specifically, an area mask is provided so as to be in contact with the top surface of the layer 127s and the conductive layer 115c is formed to prevent the area mask from contacting the conductive layer 115b or the conductive layer 115c. be able to. It should be noted that the height of the top surface of the highest position among the top surfaces of the layers 127s is assumed to be a height H127.
  • the height H127 of the top surface of the layer 127s is preferably higher than the height H115c of the top surface of the conductive layer 115c.
  • the layer 127s can be used as a support layer to support the area mask when the conductive layer 115c is formed using the area mask. can function.
  • the height H127 of the upper surface of the layer 127s may be lower than the height H170 of the upper surface of the insulating layer 170.
  • the height H170 of the upper surface of the insulating layer 170 is preferably higher than the height H115c of the upper surface of the conductive layer 115c.
  • the insulating layer 170 supports the area mask when the conductive layer 115c is formed using the area mask. It can act as a layer. It can also be said that the laminate of the insulating layer 170 and the layer 127s functions as a support layer that supports the area mask.
  • the insulating layer 170 can be provided on the insulating layer 255c.
  • the insulating layer 170 is preferably formed before forming the common layer 114a.
  • the insulating layer 170 can be formed, and then the common layer 114a can be formed. Note that the order of forming the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, the conductive layer 123, and the insulating layer 170 is not particularly limited.
  • the insulating layer 170 may be removed from the display device 100 after forming the light emitting device. For example, after the insulating layer 170 is provided outside the pixel portion 105 and the connection portion 140 and a light emitting device or the like is formed, the region where the insulating layer 170 is formed and the pixel portion 105 and the connection portion 140 are separated. Accordingly, the region where the insulating layer 170 is formed can be removed from the display device 100 . By removing the region where the insulating layer 170 is formed, the display device 100 can be made small.
  • an insulating layer covering the top end portion of the pixel electrode 111 is not provided between the pixel electrode 111 and the EL layer. Therefore, the interval between adjacent light emitting devices can be made very narrow. Therefore, a high-definition or high-resolution display device can be obtained.
  • the common electrode 115 has a laminated structure. Between adjacent pixel electrodes 111, a layer 127 is provided over the conductive layer 115b, and a conductive layer 115c is provided over the conductive layers 115b and 127. FIG. The layer 127 is provided so as to fill a recess formed between adjacent pixel electrodes 111 and can improve the coverage of the conductive layer 115c. Therefore, it is possible to suppress a connection failure and an increase in electrical resistance due to step disconnection of the common electrode 115 .
  • the top and side surfaces of the pixel electrode 111 are covered with an EL layer.
  • the pixel electrode 111 is not in contact with the common electrode 115, and short circuits can be suppressed.
  • the EL layer is covered with a conductive layer 115a and a conductive layer 115b. Since the EL layer is not exposed in the step of forming the layer 127 over the conductive layer 115b, damage to the EL layer can be suppressed. Therefore, the display device can have high display quality.
  • Embodiment 2 a method for manufacturing a display device of one embodiment of the present invention will be described with reference to FIGS. 13A to 18B. Regarding the material and formation method of each element, the description of the same parts as those described in the first embodiment may be omitted. Further, the details of the structure of the light-emitting device will be described in Embodiment Mode 4.
  • the thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are formed by sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD). ) method, Atomic Layer Deposition (ALD) method, or the like.
  • the CVD method includes a plasma enhanced CVD (PECVD) method, a thermal CVD method, and the like. Also, one of the thermal CVD methods is the metal organic CVD (MOCVD) method.
  • Thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are processed by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain It can be formed by a wet film formation method such as coating or knife coating.
  • vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices.
  • vapor deposition methods include physical vapor deposition (PVD) such as sputtering, ion plating, ion beam vapor deposition, molecular beam vapor deposition, and vacuum vapor deposition, and chemical vapor deposition (CVD).
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • the functional layers included in the EL layer, vapor deposition ( vacuum deposition method, etc.), coating method (dip coating method, die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, It can be formed by a method such as a flexographic (letterpress printing) method, a gravure method, or a microcontact method.
  • the thin film that constitutes the display device When processing the thin film that constitutes the display device, it can be processed using a photolithography method or the like. Alternatively, the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like. Alternatively, an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.
  • the photolithography method typically includes the following two methods. One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching or the like, and removing the resist mask. The other is a method of forming a thin film having photosensitivity and then exposing and developing the thin film to process the thin film into a desired shape.
  • the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these.
  • ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used.
  • extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays may be used.
  • An electron beam can also be used instead of the light used for exposure. The use of extreme ultraviolet light, X-rays, or electron beams is preferable because extremely fine processing is possible.
  • a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
  • a dry etching method, a wet etching method, a sandblasting method, or the like can be used to etch the thin film.
  • an insulating layer 255a, an insulating layer 255b, and an insulating layer 255c are formed on the substrate 102 in this order.
  • the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, and the conductive layer 123 are formed over the insulating layer 255c.
  • a sputtering method or a vacuum deposition method can be used to form the pixel electrode.
  • an insulating layer 170 is formed on the insulating layer 255c (FIG. 13B).
  • the insulating layer 170 can use one or both of an organic material and an inorganic material.
  • a photosensitive organic resin can be preferably used for the insulating layer 170 . When a photosensitive organic resin is used, the height H170 of the upper surface of the insulating layer 170 can be controlled by adjusting the exposure time.
  • the surface to be treated can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface to be treated can be increased.
  • the adhesion between the pixel electrode and a film formed in a later step can be enhanced, and film peeling can be suppressed. Note that the hydrophobic treatment may not be performed.
  • Hydrophobization treatment can be performed, for example, by modifying the pixel electrode with fluorine.
  • Fluorine modification can be performed, for example, by treatment with a fluorine-containing gas, heat treatment, plasma treatment in a fluorine-containing gas atmosphere, or the like.
  • the gas containing fluorine for example, fluorine gas can be used, and for example, fluorocarbon gas can be used.
  • fluorocarbon gas for example, carbon tetrafluoride (CF 4 ) gas, C 4 F 6 gas, C 2 F 6 gas, C 4 F 8 gas, C 5 F 8 gas, or other lower fluorocarbon gas can be used.
  • As the gas containing fluorine for example, SF6 gas, NF3 gas, CHF3 gas, etc. can be used.
  • helium gas, argon gas, hydrogen gas, or the like can be added to these gases as appropriate.
  • the surface of the pixel electrode is subjected to plasma treatment in a gas atmosphere containing a Group 18 element such as argon, and then treated with a silylating agent to make the surface of the pixel electrode hydrophobic.
  • a silylating agent hexamethyldisilazane (HMDS), trimethylsilylimidazole (TMSI), or the like can be used.
  • HMDS hexamethyldisilazane
  • TMSI trimethylsilylimidazole
  • the surface of the pixel electrode is also subjected to plasma treatment in a gas atmosphere containing a Group 18 element such as argon, and then to treatment using a silane coupling agent to make the surface of the pixel electrode hydrophobic. can do.
  • the surface of the pixel electrode By subjecting the surface of the pixel electrode to plasma treatment in a gas atmosphere containing a group 18 element such as argon, the surface of the pixel electrode can be damaged. This makes it easier for the methyl group contained in the silylating agent such as HMDS to bond to the surface of the pixel electrode. In addition, silane coupling by the silane coupling agent is likely to occur. As described above, the surface of the pixel electrode is subjected to plasma treatment in a gas atmosphere containing a Group 18 element such as argon, and then to treatment using a silylating agent or a silane coupling agent. The surface of the electrodes can be made hydrophobic.
  • the treatment using a silylating agent, silane coupling agent, or the like can be performed by applying the silylating agent, silane coupling agent, or the like, for example, using a spin coating method, a dipping method, or the like.
  • a vapor phase method is used to form a film containing a silylating agent or a film containing a silane coupling agent on a pixel electrode or the like.
  • the material containing the silylating agent or the material containing the silane coupling agent is volatilized so that the atmosphere contains the silylating agent, the silane coupling agent, or the like.
  • a substrate on which pixel electrodes and the like are formed is placed in the atmosphere.
  • a film containing a silylating agent, a silane coupling agent, or the like can be formed on the pixel electrode, and the surface of the pixel electrode can be made hydrophobic.
  • a common layer 114a is formed on the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, and the insulating layer 255c (FIG. 13C).
  • the common layer 114b can be formed by, for example, a vapor deposition method, specifically a vacuum vapor deposition method. Alternatively, it may be formed by a transfer method, a printing method, an inkjet method, or a coating method.
  • the common layer 114a is not formed on the conductive layer 123, as shown in FIG. 13C.
  • the common layer 114a can be formed only in a desired region by using a mask for defining a film formation area (also referred to as an area mask, a rough metal mask, or the like to be distinguished from a fine metal mask).
  • FIG. 13C schematically shows how the common layer 114a is formed using the area mask 156a.
  • the area mask 156 a may be placed in contact with the upper surface of the insulating layer 170 .
  • the area mask 156a does not come into contact with the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, and the conductive layer 123, and damage to these layers can be suppressed.
  • a common layer 114a may be formed over the conductive layer 123 as shown in FIG. 4A.
  • the first layer 113a is formed on the pixel electrode 111a (FIG. 14A).
  • the first layer 113a can be formed by, for example, a vapor deposition method, specifically a vacuum vapor deposition method, using a fine metal mask.
  • a transfer method, a printing method, an inkjet method, or a coating method may be used.
  • FIG. 14A schematically shows how the first layer 113a is formed using the fine metal mask 154a.
  • FIG. 14A shows how the first layer 113a is formed by a so-called face-down method, in which the substrate is turned over so that the surface on which the first layer 113a is to be formed faces downward. .
  • the fine metal mask 154a is preferably placed in contact with the upper surface of the insulating layer 170. As a result, the fine metal mask 154a is not in contact with the common layer 114a, and damage to the common layer 114a can be suppressed. Similarly, the fine metal mask 154a is not in contact with the conductive layer 123, and damage to the conductive layer 123 can be suppressed.
  • the fine metal mask 154a has an opening in the region that will become the sub-pixel 110a. Thereby, as shown in FIG. 14A, the first layer 113a can be selectively formed in the region overlapping with the pixel electrode 111a and its vicinity. In the vacuum deposition method using a fine metal mask, deposition is often performed over a wider area than the openings of the fine metal mask. Also, the side surface of the first layer 113a has a tapered shape.
  • the end of the first layer 113a is preferably located outside the end of the pixel electrode 111a.
  • the aperture ratio of the pixel can be increased.
  • the common layer 114a and the first layer 113a cover the upper surface and the side surface of the pixel electrode 111a, contact between the pixel electrode 111a and the common electrode 115 can be suppressed, so short-circuiting of the light emitting device can be suppressed.
  • the distance between the light emitting region of the light emitting device (the region where the first layer 113a and the pixel electrode 111a overlap) and the edge of the first layer 113a can be increased. By using the region apart from the edge of the first layer 113a as the light emitting region, it is possible to reduce variations in the characteristics of the light emitting device 130a.
  • a second layer 113b is formed on the pixel electrode 111b (FIG. 14B).
  • a method that can be used for forming the first layer 113a can be used to form the second layer 113b.
  • FIG. 14B schematically shows how the second layer 113b is formed using the fine metal mask 154b.
  • Fine metal mask 154 b is preferably placed in contact with the upper surface of insulating layer 170 .
  • the fine metal mask 154b is not in contact with the first layer 113a and the common layer 114a, and damage to these layers can be suppressed.
  • the fine metal mask 154b is not in contact with the conductive layer 123, and damage to the conductive layer 123 can be suppressed.
  • the fine metal mask 154b has an opening in the region that will become the sub-pixel 110b.
  • the second layer 113b can be selectively formed in the region overlapping with the pixel electrode 111b and in the vicinity thereof.
  • FIG. 14B shows an example in which the end of the second layer 113b overlaps the adjacent first layer 113a.
  • the second layer 113b may be separated from the first layer 113a without overlapping.
  • the side surface of the second layer 113b has a tapered shape.
  • the end of the second layer 113b is preferably located outside the end of the pixel electrode 111b.
  • the aperture ratio of the pixel can be increased.
  • the common layer 114a and the second layer 113b cover the top surface and the side surface of the pixel electrode 111b, contact between the pixel electrode 111b and the common electrode 115 can be suppressed, so short-circuiting of the light emitting device can be suppressed.
  • the distance between the light emitting region of the light emitting device (the region where the second layer 113b overlaps the pixel electrode 111b) and the edge of the second layer 113b can be increased. By using the region away from the end of the second layer 113b as the light emitting region, it is possible to reduce variations in the characteristics of the light emitting device 130b.
  • a third layer 113c is formed on the pixel electrode 111c (FIG. 14C).
  • a method that can be used for forming the first layer 113a can be used to form the third layer 113c.
  • FIG. 14C schematically shows how the third layer 113c is formed using the fine metal mask 154c.
  • Fine metal mask 154c is preferably placed in contact with the upper surface of insulating layer 170 .
  • the fine metal mask 154c is not in contact with the first layer 113a, the second layer 113b, and the common layer 114a, and damage to these layers can be suppressed.
  • the fine metal mask 154c is not in contact with the conductive layer 123, and damage to the conductive layer 123 can be suppressed.
  • the fine metal mask 154c has an opening in the region that will become the sub-pixel 110c.
  • the third layer 113c can be selectively formed in the region overlapping with the pixel electrode 111c and its vicinity.
  • FIG. 14C shows an example in which the end of the third layer 113c overlaps the adjacent second layer 113b.
  • the third layer 113c may be separated from the second layer 113b without overlapping.
  • the end of the third layer 113c may overlap the adjacent first layer 113a or may be separated without overlapping.
  • the side surface of the third layer 113c has a tapered shape.
  • the end of the third layer 113c is preferably located outside the end of the pixel electrode 111c.
  • the aperture ratio of the pixel can be increased.
  • the common layer 114a and the third layer 113c cover the upper surface and the side surface of the pixel electrode 111c, contact between the pixel electrode 111c and the common electrode 115 can be suppressed, so short-circuiting of the light emitting device can be suppressed.
  • the distance between the light emitting region of the light emitting device (the region where the third layer 113c and the pixel electrode 111c overlap) and the edge of the third layer 113c can be increased. By using the region away from the end of the third layer 113c as the light emitting region, it is possible to reduce variations in the characteristics of the light emitting device 130c.
  • the fourth layer 113d included in the light-receiving device is replaced with the first layer 113a to the third layer. is formed in the same manner as the layer 113c.
  • the formation order of the first layer 113a to the fourth layer 113d is not particularly limited. For example, by forming a layer having high adhesion to the common layer 114a first, film peeling during the process can be suppressed. For example, when the first to third layers 113a to 113c have higher adhesion to the common layer 114a than the fourth layer 113d, the first to third layers 113a to 113c are applied first. It is preferable to form the
  • a common layer 114b is formed on the first layer 113a, the second layer 113b, and the third layer 113c (FIG. 15A).
  • the common layer 114b can be formed using the same method as for the common layer 114a.
  • FIG. 15A schematically shows how the common layer 114b is formed using the area mask 156a.
  • the area mask 156a may be placed in contact with the upper surface of the insulating layer 170.
  • FIG. As a result, the area mask 156a is not in contact with the first layer 113a, the second layer 113b, the third layer 113c, and the conductive layer 123, and damage to these layers can be suppressed.
  • the common layer 114b is not formed on the conductive layer 123, as shown in FIG. 15A.
  • the area mask 156a is used in common for the formation of the common layer 114a and the formation of the common layer 114b. Note that when the area where the common layer 114a is formed and the area where the common layer 114b is formed are different, different area masks may be used.
  • a conductive layer 115a and a conductive layer 115b are formed in this order on the common layer 114b and the conductive layer 123 (FIG. 15B).
  • the conductive layers 115a and 115b can be formed by sputtering or vacuum evaporation, for example.
  • each of the conductive layers 115a and 115b may be formed by stacking a film formed by an evaporation method and a film formed by a sputtering method.
  • the conductive layer 115a After forming the conductive layer 115a, it is preferable to continuously form the conductive layer 115b without exposing to the atmosphere. For example, it is preferable to form the conductive layer 115a and the conductive layer 115b successively in different chambers in a vacuum using a multi-chamber sputtering apparatus. Thus, the conductive layer 115a can be covered with the conductive layer 115b without being exposed to the air, so that oxidation of the conductive layer 115a can be suppressed even when a material that is easily oxidized is used for the conductive layer 115a. .
  • the conductive layers 115 a and 115 b are provided in the pixel section 105 and the connection section 140 .
  • the conductive layers 115 a and 115 b do not have to be provided over the insulating layer 170 .
  • FIG. 15B schematically shows how the conductive layers 115a and 115b are formed using the area mask 156b.
  • the area mask 156 b may be placed in contact with the top surface of the insulating layer 170 .
  • the area mask 156b is not in contact with the common layer 114b and the conductive layer 123, and damage to these layers can be suppressed.
  • a film 127f to be the layer 127 is formed on the conductive layer 115b (FIG. 15C).
  • the film 127 f may also be provided over the insulating layer 170 .
  • the film 127f is preferably formed by a formation method that causes little damage to the first layer 113a, the second layer 113b, the third layer 113c, the common layer 114a, and the common layer 114b.
  • the film 127f is formed at a temperature lower than the heat resistance temperature of the first layer 113a, second layer 113b, third layer 113c, common layer 114a and common layer 114b.
  • the substrate temperature when forming the film 127f is room temperature or higher, 60° C. or higher, 80° C. or higher, 100° C. or higher, or 120° C. or higher and 200° C. or lower, 180° C. or lower, 160° C. or lower, 150° C. or less, or 140° C. or less.
  • the substrate temperature when forming the film 127f can be 100° C. or higher, 120° C. or higher, or 140° C. or higher.
  • the film 127f is preferably formed using the wet film forming method described above.
  • the film 127f is preferably formed, for example, by spin coating using a photosensitive resin, and more specifically, is preferably formed using a photosensitive resin composition containing an acrylic resin.
  • Heat treatment (also referred to as pre-baking) is preferably performed after the formation of the film 127f.
  • the substrate temperature during the heat treatment is lower than the heat-resistant temperatures of the first layer 113a, the second layer 113b, the third layer 113c, the common layer 114a, and the common layer 114b.
  • the substrate temperature during the heat treatment is preferably 50° C. or higher and 200° C. or lower, more preferably 60° C. or higher and 200° C. or lower, further preferably 70° C. or higher and 200° C. or lower, further preferably 80° C. or higher and 200° C. or lower.
  • the temperature is preferably 80° C. or higher and 150° C. or lower, further preferably 80° C. or higher and 120° C. or lower, further preferably 90° C. or higher and 120° C. or lower.
  • FIG. 16A Exposure is performed to expose a portion of the film 127f to visible light or ultraviolet light (FIG. 16A). Light is indicated by dashed arrows in FIG. 16A.
  • a positive photosensitive resin composition containing an acrylic resin is used for the film 127f, the region where neither the layer 127 nor the layer 127s is formed is exposed, and the region where either the layer 127 or the layer 127s is formed is masked 132 Shield from light using
  • the layer 127 is formed in a region sandwiched between any two of the pixel electrodes 111 a , 111 b , and 111 c and around the conductive layer 123 .
  • Layer 127s is formed over and around insulating layer 170 . That is, the film 127f over the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, and the conductive layer 123 is irradiated with visible light or ultraviolet light.
  • the width of the layer 127 to be formed later can be controlled depending on the region to be exposed.
  • the layer 127 is processed so as to have a portion overlapping with the top surface of the pixel electrode (see FIGS. 2A, 2B, and 3A). As shown in FIG. 3B, layer 127 may not have a portion that overlaps the top surface of the pixel electrode.
  • the light used for exposure preferably contains i-line (wavelength: 365 nm). Moreover, the light used for exposure may include at least one of g-line (wavelength: 436 nm) and h-line (wavelength: 405 nm).
  • FIG. 16A illustrates an example in which a positive photosensitive resin is used for the film 127f
  • a negative photosensitive resin may be used for the film 127f.
  • a region where the layer 127 is formed may be irradiated with visible light or ultraviolet light.
  • TMAH tetramethylammonium hydroxide
  • a developing method is not particularly limited, and a dip method, a spin method, a paddle method, a vibration method, or the like can be used.
  • residues during development may be removed.
  • the residue can be removed by ashing using oxygen plasma.
  • etching may be performed to adjust the height of the surfaces of the layers 127a and 127sa.
  • the layers 127a and 127sa may be processed, for example, by ashing using oxygen plasma. Further, even when a non-photosensitive material is used for the film 127f, the surface heights of the layers 127a and 127sa can be adjusted by the ashing or the like.
  • the entire substrate is preferably exposed to irradiate layer 127a with visible light or ultraviolet light (FIG. 17A).
  • Visible light or ultraviolet light may be applied to layer 127sa.
  • the energy density of the exposure is preferably greater than 0 mJ/cm 2 and less than or equal to 800 mJ/cm 2 , more preferably greater than 0 mJ/cm 2 and less than or equal to 500 mJ/cm 2 .
  • Such exposure after development can improve the transparency of the layer 127a in some cases.
  • the substrate temperature required for heat treatment for deforming the layer 127a into a tapered shape in a later step can be lowered. Note that the exposure is not necessary when a material that absorbs visible light is used for the layer 127 .
  • the layer 127 absorbs light emitted from the light emitting device, thereby suppressing leakage of light (stray light) to adjacent light emitting devices.
  • not exposing the layer 127a may make it easier to change the shape of the layer 127a in a later step. Therefore, it may be preferable not to expose layer 127a after development.
  • the layers 127a and 127sa can be cured by being polymerized by exposing the layers 127a and 127sa.
  • the layer 127a may not be exposed to light, and post-baking, which will be described later, may be performed while the layer 127a is maintained in a state where the shape thereof is relatively easily changed. Accordingly, the formation surface of the conductive layer 115c can be prevented from being uneven, and the conductive layer 115c can be prevented from being disconnected.
  • the layer 127a (or the layer 127) may be exposed after post-baking, which will be described later.
  • heat treatment also called post-baking
  • the heat treatment is performed at a temperature lower than the heat-resistant temperature of the EL layer.
  • the heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C.
  • the heating atmosphere may be an air atmosphere or an inert gas atmosphere.
  • the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere. A reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.
  • the substrate temperature is preferably higher than that in the heat treatment (pre-baking) after the formation of the film 127f. Accordingly, adhesion between the layer 127 and the conductive layer 115b can be improved. Also, the corrosion resistance of the layer 127 can be enhanced.
  • the pre-baking temperature and the post-baking temperature can be 100° C. or higher, 120° C. or higher, or 140° C. or higher, respectively. Accordingly, the adhesion between the layer 127 and the conductive layer 115b can be further improved. Moreover, the corrosion resistance of the layers 127 and 127s can be further enhanced. In addition, the selection range of materials that can be used for the layers 127 and 127s can be expanded. In addition, by sufficiently removing the solvent and the like contained in the layer 127, impurities such as water and oxygen can be prevented from entering the EL layer.
  • the side surface of the layer 127 may have a concave surface shape as shown in FIG. 3A.
  • the higher the post-baking temperature or the longer the post-baking time the easier it is for the layer 127 to change its shape, which may result in the formation of a concave curved surface.
  • the shape of the layer 127 may easily change during post-baking.
  • a conductive layer 115c is formed over the layer 127 and the conductive layer 115b (FIG. 18A).
  • a sputtering method or a vacuum evaporation method can be used to form the conductive layer 115c, for example.
  • the conductive layer 115c may be formed by stacking a film formed by an evaporation method and a film formed by a sputtering method.
  • the conductive layer 115 c is provided in the pixel section 105 and the connection section 140 .
  • the conductive layer 115c does not have to be provided over the layer 127s.
  • FIG. 18A schematically shows how the conductive layer 115c is formed using the area mask 156b.
  • the area mask 156b may be placed in contact with the upper surface of the layer 127s formed on the insulating layer 170. FIG. As a result, the area mask 156b does not come into contact with the pixel portion 105 and the connection portion 140, and damage to these can be suppressed.
  • a protective layer 131 is formed on the conductive layer 115c (FIG. 18B).
  • a protective layer 131 may also be provided over the layer 127s.
  • a display device can be manufactured by bonding the substrate 120 onto the protective layer 131 using the resin layer 122 (FIG. 10A).
  • Formation of the protective layer 131 includes a vacuum deposition method, a sputtering method, a CVD method, an ALD method, and the like.
  • the insulating layer 170 and the layer 127s may be removed from the display device. For example, by separating the region where the insulating layer 170 and the layer 127s are formed from the pixel portion 105 and the connection portion 140, the region where the insulating layer 170 and the layer 127s are formed is removed from the display device. be able to. By removing the region where the insulating layer 170 and the layer 127s are formed, a small display device can be obtained.
  • the insulating layer covering the upper surface end portion of the pixel electrode 111 is not provided between the pixel electrode 111 and the EL layer. Therefore, the interval between adjacent light emitting devices can be made very narrow. Therefore, a high-definition or high-resolution display device can be obtained.
  • the layer 127 on the conductive layer 115b so as to fill the recesses generated between the adjacent pixel electrodes 111, the coverage of the conductive layer 115c can be improved. Therefore, it is possible to suppress a connection failure and an increase in electrical resistance due to step disconnection of the common electrode 115 .
  • the pixel electrode 111 does not come into contact with the common electrode 115, and short circuit can be suppressed.
  • the EL layer is covered with a conductive layer 115a and a conductive layer 115b. Since the EL layer is not exposed in the step of forming the layer 127 over the conductive layer 115b, damage to the EL layer can be suppressed. Therefore, the display device can have high display quality.
  • a mask (fine metal mask and area mask) can be used to form the EL layer and the common electrode 115 .
  • a layer 127 s may also be provided over the insulating layer 170 .
  • the stack of insulating layer 170 and layer 127s can serve as a support layer for a mask in forming conductive layer 115c.
  • FIG. 1A a pixel layout different from that in FIG. 1A is mainly described.
  • the arrangement of sub-pixels There is no particular limitation on the arrangement of sub-pixels, and various methods can be applied. Examples of the arrangement of sub-pixels include stripe arrangement, S-stripe arrangement, matrix arrangement, delta arrangement, Bayer arrangement, and pentile arrangement.
  • the top surface shape of the sub-pixel shown in the drawings in this embodiment corresponds to the top surface shape of the light emitting region (or light receiving region).
  • top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles, rhombuses, and squares), polygons such as pentagons, polygons with rounded corners, ellipses, and circles.
  • the circuit layout that configures the sub-pixels is not limited to the range of the sub-pixels shown in the drawing, and may be arranged outside the sub-pixels.
  • a pixel 110 shown in FIG. 19A is composed of three sub-pixels, a sub-pixel 110a, a sub-pixel 110b, and a sub-pixel 110c.
  • the pixel 110 shown in FIG. 19B includes a subpixel 110a having a substantially trapezoidal top surface shape with rounded corners, a subpixel 110b having a substantially triangular top surface shape with rounded corners, and a substantially square or substantially hexagonal top surface shape with rounded corners. and a sub-pixel 110c having Also, the sub-pixel 110b has a larger light emitting area than the sub-pixel 110a.
  • the shape and size of each sub-pixel can be determined independently. For example, sub-pixels with more reliable light emitting devices can be smaller in size.
  • FIG. 19C shows an example in which pixels 124a having sub-pixels 110a and 110b and pixels 124b having sub-pixels 110b and 110c are alternately arranged.
  • Pixel 124a has two sub-pixels (sub-pixels 110a and 110b) in the upper row (first row) and one sub-pixel (sub-pixel 110c) in the lower row (second row).
  • Pixel 124b has one sub-pixel (sub-pixel 110c) in the upper row (first row) and two sub-pixels (sub-pixels 110a and 110b) in the lower row (second row).
  • FIG. 19D is an example in which each sub-pixel has a substantially square top surface shape with rounded corners
  • FIG. 19E is an example in which each sub-pixel has a circular top surface shape.
  • FIG. 19F is an example in which sub-pixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two sub-pixels (for example, sub-pixel 110a and sub-pixel 110b or sub-pixel 110b and sub-pixel 110c) aligned in the row direction are shifted.
  • the sub-pixel 110a is a sub-pixel R that emits red light
  • the sub-pixel 110b is a sub-pixel G that emits green light
  • the sub-pixel 110c is a sub-pixel that emits blue light.
  • Sub-pixel B is preferable. Note that the configuration of the sub-pixels is not limited to this, and the colors exhibited by the sub-pixels and the order in which the sub-pixels are arranged can be determined as appropriate.
  • the sub-pixel 110b may be a sub-pixel R that emits red light
  • the sub-pixel 110a may be a sub-pixel G that emits green light.
  • the top surface shape of the sub-pixel may be a polygonal shape with rounded corners, an elliptical shape, a circular shape, or the like.
  • the EL layer is processed into an island shape using a resist mask.
  • the resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, curing of the resist film may be insufficient depending on the heat resistance temperature of the EL layer material and the curing temperature of the resist material.
  • a resist film that is insufficiently hardened may take a shape away from the desired shape during processing.
  • the top surface shape of the EL layer may be a polygon with rounded corners, an ellipse, or a circle. For example, when a resist mask having a square top surface is formed, a resist mask having a circular top surface is formed, and the EL layer may have a circular top surface.
  • a technique for correcting the mask pattern in advance so that the design pattern and the transfer pattern match.
  • OPC Optical Proximity Correction
  • a pattern for correction is added to a corner portion of a figure on a mask pattern.
  • a pixel can have four types of sub-pixels.
  • a stripe arrangement is applied to the pixels 110 shown in FIGS. 20A to 20C.
  • FIG. 20A is an example in which each sub-pixel has a rectangular top surface shape
  • FIG. 20B is an example in which each sub-pixel has a top surface shape connecting two semicircles and a rectangle
  • FIG. This is an example where the sub-pixel has an elliptical top surface shape.
  • a matrix arrangement is applied to the pixels 110 shown in FIGS. 20D to 20F.
  • FIG. 20D is an example in which each sub-pixel has a square top surface shape
  • FIG. 20E is an example in which each sub-pixel has a substantially square top surface shape with rounded corners
  • FIG. which have a circular top shape.
  • 20G and 20H show an example in which one pixel 110 is composed of 2 rows and 3 columns.
  • the pixel 110 shown in FIG. 20G has three sub-pixels (sub-pixels 110a, 110b, 110c) in the upper row (first row) and one sub-pixel ( sub-pixel 110d).
  • pixel 110 has sub-pixel 110a in the left column (first column), sub-pixel 110b in the middle column (second column), and sub-pixel 110b in the right column (third column). It has pixels 110c and sub-pixels 110d over these three columns.
  • the pixel 110 shown in FIG. 20H has three sub-pixels (sub-pixels 110a, 110b, 110c) in the upper row (first row) and three sub-pixels 110d in the lower row (second row). have In other words, pixel 110 has sub-pixels 110a and 110d in the left column (first column), sub-pixels 110b and 110d in the center column (second column), and sub-pixels 110b and 110d in the middle column (second column).
  • a column (third column) has a sub-pixel 110c and a sub-pixel 110d.
  • FIG. 20I shows an example in which one pixel 110 is composed of 3 rows and 2 columns.
  • the pixel 110 shown in FIG. 20I has sub-pixels 110a in the upper row (first row) and sub-pixels 110b in the middle row (second row). It has a sub-pixel 110c and one sub-pixel (sub-pixel 110d) in the lower row (third row).
  • the pixel 110 has sub-pixels 110a and 110b in the left column (first column), sub-pixel 110c in the right column (second column), and sub-pixels 110c and 110c in the right column (second column). It has a pixel 110d.
  • a pixel 110 shown in FIGS. 20A to 20I is composed of four sub-pixels 110a, 110b, 110c, and 110d.
  • the sub-pixels 110a, 110b, 110c, and 110d can be configured to have light-emitting devices with different emission colors.
  • As the sub-pixels 110a, 110b, 110c, and 110d four sub-pixels of R, G, B, and white (W), four sub-pixels of R, G, B, and Y, or R, G, B, Infrared light (IR) sub-pixels and the like are included.
  • the subpixel 110a is a subpixel R that emits red light
  • the subpixel 110b is a subpixel G that emits green light
  • the subpixel 110c is a subpixel that emits blue light.
  • the sub-pixel 110d be the sub-pixel B that emits white light, the sub-pixel Y that emits yellow light, or the sub-pixel IR that emits near-infrared light.
  • the pixel 110 shown in FIGS. 20G and 20H has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • the pixel 110 may have sub-pixels with light-receiving devices.
  • any one of the sub-pixels 110a to 110d may be a sub-pixel having a light receiving device.
  • the subpixel 110a is a subpixel R that emits red light
  • the subpixel 110b is a subpixel G that emits green light
  • the subpixel 110c is a subpixel that emits blue light.
  • the sub-pixel B is the sub-pixel B
  • the sub-pixel 110d is the sub-pixel S having the light-receiving device.
  • the pixel 110 shown in FIGS. 20G and 20H has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • the wavelength of light detected by the sub-pixel S having a light receiving device is not particularly limited.
  • the sub-pixel S can be configured to detect one or both of visible light and infrared light.
  • the pixel can be configured to have five types of sub-pixels.
  • FIG. 20J shows an example in which one pixel 110 is composed of 2 rows and 3 columns.
  • the pixel 110 shown in FIG. 20J has three sub-pixels (sub-pixels 110a, 110b, 110c) in the upper row (first row) and two sub-pixels ( sub-pixels 110d and 110e).
  • pixel 110 has sub-pixels 110a and 110d in the left column (first column), sub-pixel 110b in the center column (second column), and right column (third column). has sub-pixels 110c in the second and third columns, and sub-pixels 110e in the second and third columns.
  • FIG. 20K shows an example in which one pixel 110 is composed of 3 rows and 2 columns.
  • the pixel 110 shown in FIG. 20K has sub-pixels 110a in the upper row (first row) and sub-pixels 110b in the middle row (second row). It has a sub-pixel 110c and two sub-pixels (sub-pixels 110d and 110e) in the lower row (third row). In other words, pixel 110 has sub-pixels 110a, 110b, and 110d in the left column (first column) and sub-pixels 110c and 110e in the right column (second column).
  • the sub-pixel 110a is a sub-pixel R that emits red light
  • the sub-pixel 110b is a sub-pixel G that emits green light
  • the sub-pixel 110c is a sub-pixel that emits blue light.
  • the sub-pixel B that exhibits
  • the pixel 110 shown in FIG. 20J has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • each pixel 110 shown in FIGS. 20J and 20K for example, at least one of the sub-pixels 110d and 110e is preferably a sub-pixel S having a light receiving device.
  • the configurations of the light receiving devices may be different from each other. For example, at least a part of the wavelength regions of the light to be detected may be different.
  • one of the sub-pixel 110d and the sub-pixel 110e may have a light receiving device that mainly detects visible light, and the other may have a light receiving device that mainly detects infrared light.
  • each pixel 110 shown in FIGS. 20J and 20K for example, one of the sub-pixel 110d and the sub-pixel 110e is applied with a sub-pixel S having a light-receiving device, and the other is a light-emitting device that can be used as a light source. It is preferable to apply sub-pixels with For example, it is preferable that one of the sub-pixel 110d and the sub-pixel 110e is a sub-pixel IR that emits infrared light, and the other is a sub-pixel S that has a light receiving device that detects infrared light.
  • a pixel having sub-pixels R, G, B, IR, and S an image is displayed using the sub-pixels R, G, and B, and the sub-pixel IR is used as a light source at the sub-pixel S. Reflected infrared light can be detected.
  • various layouts can be applied to pixels each including subpixels each including a light-emitting device. Further, a structure in which a pixel includes both a light-emitting device and a light-receiving device can be applied to the display device of one embodiment of the present invention. Also in this case, various layouts can be applied.
  • the display device of this embodiment can be a high-definition display device. Therefore, the display device of the present embodiment includes, for example, display units of information terminals (wearable devices) such as wristwatch-type and bracelet-type devices, devices for VR such as head-mounted displays (HMD), and glasses. It can be used for the display part of a wearable device that can be worn on the head, such as a model AR device.
  • wearable devices such as wristwatch-type and bracelet-type devices
  • VR head-mounted displays (HMD)
  • glasses can be used for the display part of a wearable device that can be worn on the head, such as a model AR device.
  • the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used, for example, in televisions, desktop or notebook personal computers, monitors for computers, digital signage, and relatively large screens such as large game machines such as pachinko machines. It can be used for display portions of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices, in addition to electronic devices equipped with
  • FIG. 21A shows a perspective view of display module 280 .
  • the display module 280 has a display device 100A and an FPC 290 .
  • the display device included in the display module 280 is not limited to the display device 100A, and may be any one of the display devices 100B to 100F, which will be described later.
  • the display module 280 has substrates 291 and 292 .
  • the display module 280 has a display section 281 .
  • the display unit 281 is an area for displaying an image in the display module 280, and is an area where light from each pixel provided in the pixel unit 284, which will be described later, can be visually recognized.
  • FIG. 21B shows a perspective view schematically showing the configuration on the substrate 291 side.
  • a circuit section 282 , a pixel circuit section 283 on the circuit section 282 , and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291 .
  • a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel portion 284 .
  • the terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.
  • the pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of FIG. 21B. Various configurations described in the above embodiments can be applied to the pixel 284a.
  • FIG. 21B shows, as an example, the case of having the same configuration as the pixel 110 shown in FIG. 1A.
  • the pixel circuit section 283 has a plurality of periodically arranged pixel circuits 283a.
  • One pixel circuit 283a is a circuit that controls driving of a plurality of elements included in one pixel 284a.
  • One pixel circuit 283a can have a structure in which three circuits for controlling light emission of one light-emitting device are provided.
  • the pixel circuit 283a can have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light emitting device. At this time, a gate signal is inputted to the gate of the selection transistor, and a source signal is inputted to the source thereof. This realizes an active matrix display device.
  • the circuit section 282 has a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 .
  • a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 For example, it is preferable to have one or both of a gate line driver circuit and a source line driver circuit.
  • at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like may be provided.
  • the FPC 290 functions as wiring for supplying a video signal, power supply potential, or the like to the circuit section 282 from the outside. Also, an IC may be mounted on the FPC 290 .
  • the aperture ratio (effective display area ratio) of the display portion 281 is can be very high.
  • the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less.
  • the pixels 284a can be arranged at an extremely high density, and the definition of the display portion 281 can be extremely high.
  • the pixels 284a may be arranged with a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and still more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less. preferable.
  • a display module 280 Since such a display module 280 has extremely high definition, it can be suitably used for VR devices such as HMDs or glasses-type AR devices. For example, even in the case of a configuration in which the display portion of the display module 280 is viewed through a lens, the display module 280 has an extremely high-definition display portion 281, so pixels cannot be viewed even if the display portion is enlarged with the lens. , a highly immersive display can be performed.
  • the display module 280 is not limited to this, and can be suitably used for electronic equipment having a relatively small display unit. For example, it can be suitably used for a display part of a wearable electronic device such as a wristwatch.
  • a display device 100A illustrated in FIG. 22A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.
  • FIG. 22A A display device 100A illustrated in FIG. 22A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.
  • the substrate 301 corresponds to the substrate 291 in FIGS. 21A and 21B.
  • a laminated structure from the substrate 301 to the insulating layer 255c corresponds to the layer 101 in the first embodiment.
  • a transistor 310 is a transistor having a channel formation region in the substrate 301 .
  • the substrate 301 for example, a semiconductor substrate such as a single crystal silicon substrate can be used.
  • Transistor 310 includes a portion of substrate 301 , conductive layer 311 , low resistance region 312 , insulating layer 313 and insulating layer 314 .
  • the conductive layer 311 functions as a gate electrode.
  • An insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer.
  • the low-resistance region 312 is a region in which the substrate 301 is doped with impurities, and functions as one of the source and the drain.
  • the insulating layer 314 is provided to cover the side surface of the conductive layer 311 .
  • a device isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .
  • An insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .
  • the capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 positioned therebetween.
  • the conductive layer 241 functions as one electrode of the capacitor 240
  • the conductive layer 245 functions as the other electrode of the capacitor 240
  • the insulating layer 243 functions as the dielectric of the capacitor 240 .
  • the conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254 .
  • Conductive layer 241 is electrically connected to one of the source and drain of transistor 310 by plug 271 embedded in insulating layer 261 .
  • An insulating layer 243 is provided over the conductive layer 241 .
  • the conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 provided therebetween.
  • a conductive layer surrounding the display portion 281 is preferably provided in at least one of the conductive layers included in the layer 101.
  • the conductive layer can also be called a guard ring.
  • An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b.
  • a light emitting device 130R, a light emitting device 130G, and a light emitting device 130B are provided on the insulating layer 255c.
  • FIG. 22A shows an example in which the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B have a structure similar to the laminated structure shown in FIG. 1B.
  • An insulator is provided in the region between adjacent light emitting devices. In FIG. 22A and the like, the region and the upper layer 127 are provided.
  • a is located on the first layer 113a of the light emitting device 130R, b is located on the second layer 113b of the light emitting device 130G, and b is located on the third layer 113c of the light emitting device 130B. is located at c.
  • the pixel electrode 111a, the pixel electrode 111b, and the pixel electrode 111c are composed of the insulating layer 243, the insulating layer 255a, the insulating layer 255b, and the plug 256 embedded in the insulating layer 255c, the conductive layer 241 embedded in the insulating layer 254, and the It is electrically connected to one of the source and drain of the transistor 310 by a plug 271 embedded in the insulating layer 261 .
  • the height of the upper surface of the insulating layer 255c and the height of the upper surface of the plug 256 match or substantially match.
  • Various conductive materials can be used for the plug.
  • FIG. 22A and the like show examples in which the pixel electrode has a two-layer structure of a reflective electrode and a transparent electrode on the reflective electrode.
  • a substrate 120 is bonded with a resin layer 122 onto the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B.
  • a protective layer 131 may be provided to cover the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B, and the substrate 120 may be bonded onto the protective layer 131 with a resin layer 122.
  • Embodiment 1 can be referred to for details of the components from the light emitting device to the substrate 120 .
  • Substrate 120 corresponds to substrate 292 in FIG. 21A.
  • the display device shown in FIGS. 22B and 22C is an example having light emitting devices 130R and 130G and a light receiving device 150.
  • FIG. Although not shown, the display also has a light emitting device 130B.
  • layers below the insulating layer 255a are omitted.
  • the display device shown in FIGS. 22B and 22C can apply any structure of the layer 101 shown in FIGS. 22A and 23 to 27, for example.
  • the light receiving device 150 has a pixel electrode 111d, a fourth layer 113d, a common layer 114b, and a common electrode 115 which are stacked.
  • Embodiments 1 and 6 can be referred to for details of the display device including the light receiving device.
  • the display device may be provided with a lens array 133, as shown in FIG. 22C.
  • the lens array 133 can be provided over one or both of the light emitting device and the light receiving device.
  • FIG. 22C shows an example in which a lens array 133 is provided over the light emitting devices 130R, 130G and the light receiving device 150 with a protective layer 131 interposed therebetween.
  • a lens array 133 may be provided on the substrate 120 and bonded onto the protective layer 131 with the resin layer 122 . By providing the lens array 133 over the substrate 120, the temperature of the heat treatment in the process of forming the lens array 133 can be increased.
  • the convex surface of the lens array 133 may face the substrate 120 side or the light emitting device side.
  • the lens array 133 can be formed using at least one of an inorganic material and an organic material.
  • a material containing resin can be used for the lens.
  • a material containing at least one of an oxide and a sulfide can be used for the lens.
  • a microlens array can be used as the lens array 133 .
  • the lens array 133 may be formed directly on the substrate or the light-emitting device, or may be bonded with a separately formed lens array.
  • a display device 100B shown in FIG. 23 has a structure in which a transistor 310A and a transistor 310B each having a channel formed in a semiconductor substrate are stacked.
  • the description of the same parts as those of the previously described display device may be omitted.
  • the display device 100B has a configuration in which a substrate 301B provided with a transistor 310B, a capacitor 240, and a light emitting device and a substrate 301A provided with a transistor 310A are bonded together.
  • an insulating layer 345 on the lower surface of the substrate 301B.
  • an insulating layer 346 is preferably provided over the insulating layer 261 provided over the substrate 301A.
  • the insulating layers 345 and 346 are insulating layers that function as protective layers, and can suppress diffusion of impurities into the substrates 301B and 301A.
  • An inorganic insulating film that can be used for the protective layer 131 or the insulating layer 332 can be used for each of the insulating layers 345 and 346 .
  • a plug 343 penetrating through the substrate 301B and the insulating layer 345 is provided on the substrate 301B.
  • the insulating layer 344 is an insulating layer that functions as a protective layer and can suppress diffusion of impurities into the substrate 301B.
  • An inorganic insulating film that can be used for the protective layer 131 can be used for the insulating layer 344 .
  • a conductive layer 342 is provided under the insulating layer 345 on the back surface side (surface opposite to the substrate 120 side) of the substrate 301B.
  • the conductive layer 342 is preferably embedded in the insulating layer 335 .
  • the lower surfaces of the conductive layer 342 and the insulating layer 335 are preferably planarized.
  • the conductive layer 342 is electrically connected with the plug 343 .
  • the conductive layer 341 is provided on the insulating layer 346 on the substrate 301A.
  • the conductive layer 341 is preferably embedded in the insulating layer 336 . It is preferable that top surfaces of the conductive layer 341 and the insulating layer 336 be planarized.
  • the substrates 301A and 301B are electrically connected.
  • the conductive layer 341 and the conductive layer 342 are bonded together. can be improved.
  • the conductive layers 341 and 342 preferably use the same conductive material.
  • a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) containing the above elements as components etc. can be used.
  • copper is preferably used for the conductive layers 341 and 342 .
  • a Cu—Cu (copper-copper) direct bonding technique (a technique for achieving electrical continuity by connecting Cu (copper) pads) can be applied.
  • a display device 100 ⁇ /b>C shown in FIG. 24 has a configuration in which a conductive layer 341 and a conductive layer 342 are bonded via bumps 347 .
  • the conductive layers 341 and 342 can be electrically connected.
  • the bumps 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Also, for example, solder may be used as the bumps 347 . Further, an adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346 . Further, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.
  • Display device 100D A display device 100D shown in FIG. 25 is mainly different from the display device 100A in that the configuration of transistors is different.
  • the transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) exhibiting semiconductor characteristics is applied to a semiconductor layer in which a channel is formed.
  • a metal oxide also referred to as an oxide semiconductor
  • a transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .
  • the substrate 331 corresponds to the substrate 291 in FIGS. 21A and 21B.
  • a laminated structure from the substrate 331 to the insulating layer 255c corresponds to the layer 101 in the first embodiment.
  • An insulating substrate or a semiconductor substrate can be used for the substrate 331 .
  • An insulating layer 332 is provided on the substrate 331 .
  • the insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 into the transistor 320 and oxygen from the semiconductor layer 321 toward the insulating layer 332 side.
  • a film into which hydrogen or oxygen is less likely to diffuse than a silicon oxide film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.
  • a barrier layer indicates a layer having barrier properties.
  • the barrier property is defined as a function of suppressing diffusion of a corresponding substance (also referred to as low permeability).
  • the corresponding substance has a function of capturing or fixing (also called gettering).
  • a conductive layer 327 is provided over the insulating layer 332 , and an insulating layer 326 is provided to cover the conductive layer 327 .
  • the conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer.
  • An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321 .
  • the upper surface of the insulating layer 326 is preferably planarized.
  • the semiconductor layer 321 is provided on the insulating layer 326 .
  • the semiconductor layer 321 preferably has a metal oxide (oxide semiconductor) film having semiconductor properties.
  • a pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.
  • An insulating layer 328 is provided covering the top and side surfaces of the pair of conductive layers 325 and the side surface of the semiconductor layer 321, and the insulating layer 264 is provided on the insulating layer 328.
  • the insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264 or the like and oxygen from leaving the semiconductor layer 321 .
  • an insulating film similar to that of the insulating layer 332 can be used as the insulating layer 328.
  • An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264 .
  • the insulating layer 323 and the conductive layer 324 are buried in contact with the side surfaces of the insulating layer 264 , the insulating layer 328 , and the conductive layer 325 and the top surface of the semiconductor layer 321 .
  • the conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.
  • the top surface of the conductive layer 324, the top surface of the insulating layer 323, and the top surface of the insulating layer 264 are planarized so that their heights are the same or substantially the same, and the insulating layers 329 and 265 are provided to cover them. ing.
  • the insulating layers 264 and 265 function as interlayer insulating layers.
  • the insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the transistor 320 from the insulating layer 265 or the like.
  • an insulating film similar to the insulating layers 328 and 332 can be used.
  • a plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layers 265 , 329 and 264 .
  • the plug 274 includes a conductive layer 274a that covers the side surfaces of the openings of the insulating layers 265, the insulating layers 329, the insulating layers 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and the conductive layer 274a. It is preferable to have a conductive layer 274b in contact with the top surface. At this time, a conductive material into which hydrogen and oxygen are difficult to diffuse is preferably used for the conductive layer 274a.
  • a display device 100E illustrated in FIG. 26 has a structure in which a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed are stacked.
  • the description of the display device 100D can be referred to for the configuration of the transistor 320A, the transistor 320B, and their peripherals.
  • transistors each including an oxide semiconductor are stacked here, the structure is not limited to this.
  • a structure in which three or more transistors are stacked may be employed.
  • a display device 100F illustrated in FIG. 27 has a structure in which a transistor 310 in which a channel is formed over a substrate 301 and a transistor 320 including a metal oxide in a semiconductor layer in which the channel is formed are stacked.
  • An insulating layer 261 is provided to cover the transistor 310 , and a conductive layer 251 is provided over the insulating layer 261 .
  • An insulating layer 262 is provided to cover the conductive layer 251 , and the conductive layer 252 is provided over the insulating layer 262 .
  • the conductive layers 251 and 252 each function as wirings.
  • An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252 , and the transistor 320 is provided over the insulating layer 332 .
  • An insulating layer 265 is provided to cover the transistor 320 and a capacitor 240 is provided over the insulating layer 265 . Capacitor 240 and transistor 320 are electrically connected by plug 274 .
  • the transistor 320 can be used as a transistor forming a pixel circuit. Further, the transistor 310 can be used as a transistor forming a pixel circuit or a transistor forming a driver circuit (a gate line driver circuit or a source line driver circuit) for driving the pixel circuit. Further, the transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit and a memory circuit.
  • a pixel circuit not only a pixel circuit but also a driver circuit and the like can be formed directly under the light-emitting device, so that the size of the display device can be reduced compared to the case where the driver circuit is provided around the display region. becomes possible.
  • the crystallinity of the semiconductor material used for the transistor is not particularly limited, either. (semiconductors having A single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration in transistor characteristics can be suppressed.
  • the semiconductor layer of the transistor preferably has a metal oxide (oxide semiconductor) exhibiting semiconductor characteristics.
  • the display device of this embodiment preferably uses a transistor including a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).
  • metal oxides examples include indium oxide, gallium oxide, and zinc oxide.
  • the metal oxide preferably contains two or three elements selected from indium, the element M, and zinc.
  • Element M includes gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium.
  • the element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) is preferably used as the metal oxide used for the semiconductor layer.
  • an oxide containing indium, tin, and zinc also referred to as ITZO (registered trademark)
  • ITZO registered trademark
  • oxides containing indium, gallium, tin, and zinc are preferably used.
  • an oxide containing indium (In), aluminum (Al), and zinc (Zn) also referred to as IAZO
  • an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) is preferably used.
  • the atomic ratio of In in the In-M-Zn oxide is preferably equal to or higher than the atomic ratio of M.
  • the semiconductor layer may have two or more metal oxide layers with different compositions.
  • the element M it is particularly preferable to use gallium or aluminum.
  • crystalline oxide semiconductors examples include CAAC (c-axis-aligned crystalline)-OS, nc (nanocrystalline)-OS, and the like.
  • a transistor using silicon for a channel formation region may be used.
  • silicon examples include monocrystalline silicon, polycrystalline silicon, amorphous silicon, and the like.
  • a transistor including low-temperature polysilicon (LTPS) in a semiconductor layer hereinafter also referred to as an LTPS transistor
  • the LTPS transistor has high field effect mobility and good frequency characteristics.
  • Si transistors such as LTPS transistors
  • circuits that need to be driven at high frequencies for example, source driver circuits
  • An OS transistor has extremely high field effect mobility compared to a transistor using amorphous silicon.
  • an OS transistor has extremely low source-drain leakage current (hereinafter also referred to as an off-state current) in an off state, and can retain charge accumulated in a capacitor connected in series with the transistor for a long time. is possible. Further, by using the OS transistor, power consumption of the display device can be reduced.
  • the amount of current flowing through the light-emitting device included in the pixel circuit In order to increase the luminance of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. For this purpose, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Since the OS transistor has a higher breakdown voltage between the source and the drain than the Si transistor, a high voltage can be applied between the source and the drain of the OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light emitting device can be increased, and the light emission luminance of the light emitting device can be increased.
  • the OS transistor When the transistor operates in the saturation region, the OS transistor can reduce the change in the source-drain current with respect to the change in the gate-source voltage compared to the Si transistor. Therefore, by applying an OS transistor as a drive transistor included in a pixel circuit, the current flowing between the source and the drain can be finely determined according to the change in the voltage between the gate and the source. can be controlled. Therefore, it is possible to increase the gradation in the pixel circuit.
  • the OS transistor In the saturation characteristics of the current that flows when the transistor operates in the saturation region, the OS transistor can flow a more stable current (saturation current) than the Si transistor even when the source-drain voltage gradually increases. can. Therefore, by using the OS transistor as the driving transistor, a stable current can be supplied to the light-emitting device even when the current-voltage characteristics of the EL device vary, for example. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so that the light emission luminance of the light-emitting device can be stabilized.
  • an OS transistor as a driving transistor included in a pixel circuit, it is possible to suppress black floating, increase emission luminance, provide multiple gradations, and suppress variations in light emitting devices. can be planned.
  • SBS Scheme By Side
  • the emission color of the light emitting device can be red, green, blue, cyan, magenta, yellow, white, or the like.
  • color purity can be enhanced by providing a light-emitting device with a microcavity structure.
  • the light emitting device has an EL layer 763 between a pair of electrodes (lower electrode 761 and upper electrode 762).
  • EL layer 763 can be composed of multiple layers, such as layer 780 , light-emitting layer 771 , and layer 790 .
  • the light-emitting layer 771 has at least a light-emitting substance (also referred to as a light-emitting material).
  • the layer 780 includes a layer containing a substance with high hole injection property (hole injection layer), a layer containing a substance with high hole transport property (positive hole-transporting layer) and a layer containing a highly electron-blocking substance (electron-blocking layer).
  • the layer 790 includes a layer containing a substance with high electron injection properties (electron injection layer), a layer containing a substance with high electron transport properties (electron transport layer), and a layer containing a substance with high hole blocking properties (positive layer). pore blocking layer).
  • a structure having a layer 780, a light-emitting layer 771, and a layer 790 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 28A is called a single structure in this specification.
  • FIG. 28B is a modification of the EL layer 763 included in the light emitting device shown in FIG. 28A. Specifically, the light-emitting device shown in FIG. It has a top layer 792 and a top electrode 762 on layer 792 .
  • layer 781 is a hole injection layer
  • layer 782 is a hole transport layer
  • layer 791 is an electron transport layer
  • layer 792 is an electron injection layer.
  • the layer 781 is an electron injection layer
  • the layer 782 is an electron transport layer
  • the layer 791 is a hole transport layer
  • the layer 792 is a hole injection layer.
  • a configuration in which a plurality of light-emitting layers (light-emitting layers 771, 772, and 773) are provided between layers 780 and 790 is also a variation of the single structure.
  • tandem structure a structure in which a plurality of light-emitting units (EL layers 763a and 763b) are connected in series via a charge generation layer 785 is referred to herein as a tandem structure.
  • the tandem structure may also be called a stack structure. Note that the tandem structure enables a light-emitting device capable of emitting light with high luminance.
  • the light-emitting layers 771, 772, and 773 may be made of a light-emitting material that emits light of the same color, or even the same light-emitting material.
  • a light-emitting substance that emits blue light may be used for the light-emitting layers 771 , 772 , and 773 .
  • a color conversion layer may be provided as layer 764 shown in FIG. 28D.
  • light-emitting substances with different emission colors may be used for the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773.
  • white light emission By mixing light emitted from each of the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773, white light emission can be obtained.
  • a color filter also referred to as a colored layer
  • a desired color of light can be obtained by passing the white light through the color filter.
  • a light-emitting device that emits white light preferably contains two or more types of light-emitting substances.
  • the emission color of the first light-emitting layer and the emission color of the second light-emitting layer have a complementary color relationship, it is possible to obtain a light-emitting device that emits white light as a whole.
  • a light-emitting device having three or more light-emitting layers it is possible to adopt a configuration in which white light emission is obtained by mixing light emitted from each layer.
  • the luminescent layers 771 and 772 may be made of a luminescent material that emits light of the same color, or even the same luminescent material.
  • light-emitting substances with different emission colors may be used for the light-emitting layers 771 and 772 .
  • the emission color of the light-emitting layer 771 and the emission color of the light-emitting layer 772 are complementary colors, white light emission is obtained.
  • FIG. 28F shows an example in which an additional layer 764 is provided.
  • One or both of a color conversion layer and a color filter (colored layer) can be used for the layer 764 .
  • the layers 780 and 790 may each independently have a laminated structure consisting of two or more layers.
  • a conductive film that transmits visible light is used for the upper electrode 762 in order to extract light to the upper electrode 762 side.
  • Both low-molecular-weight compounds and high-molecular-weight compounds can be used in the light-emitting device, and inorganic compounds may be included.
  • Each of the layers constituting the light-emitting device can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • the luminescent layer can have one or more luminescent substances.
  • a substance that emits light such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • Examples of light-emitting substances include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.
  • fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. be done.
  • a phosphorescent material for example, a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or an organometallic complex (especially an iridium complex) having a pyridine skeleton, or a phenylpyridine derivative having an electron-withdrawing group is coordinated.
  • Organometallic complexes particularly iridium complexes
  • platinum complexes, rare earth metal complexes, and the like, which are used as a child, can be mentioned.
  • the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • organic compounds host material, assist material, etc.
  • One or both of a highly hole-transporting substance (hole-transporting material) and a highly electron-transporting substance (electron-transporting material) can be used as the one or more organic compounds.
  • Bipolar materials or TADF materials may also be used as one or more organic compounds.
  • the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting device can be realized at the same time.
  • the EL layer 763 includes, as layers other than the light-emitting layer, a substance with a high hole-injection property, a substance with a high hole-transport property, a hole-blocking material, a substance with a high electron-transport property, a substance with a high electron-injection property, and an electron-blocking material. , a layer containing a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like.
  • the hole-injecting layer is a layer that injects holes from the anode to the hole-transporting layer, and contains a substance with high hole-injecting properties.
  • Substances with high hole-injection properties include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
  • the hole-transporting material a substance having a high hole-transporting property that can be used for the hole-transporting layer, which will be described later, can be used.
  • oxides of metals belonging to groups 4 to 8 in the periodic table can be used.
  • Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide.
  • molybdenum oxide is particularly preferred because it is stable even in the atmosphere, has low hygroscopicity, and is easy to handle.
  • An organic acceptor material containing fluorine can also be used.
  • Organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used.
  • a material containing a hole-transporting material and an oxide of a metal belonging to Groups 4 to 8 in the above-described periodic table (typically molybdenum oxide) is used. may be used.
  • the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • the hole-transporting material is preferably a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
  • the hole-transporting materials are substances with high hole-transporting properties such as ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton). preferable.
  • ⁇ -electron-rich heteroaromatic compounds e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.
  • aromatic amines compounds having an aromatic amine skeleton.
  • the electron blocking layer is provided in contact with the light emitting layer.
  • the electron blocking layer is a layer containing a material capable of transporting holes and blocking electrons.
  • a material having an electron blocking property can be used among the above hole-transporting materials.
  • the electron blocking layer has hole transport properties, it can also be called a hole transport layer. Moreover, the layer which has electron blocking property can also be called an electron blocking layer among hole transport layers.
  • the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • the electron-transporting material is preferably a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
  • Electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, and oxazole. derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds.
  • a substance having a high electron-transport property such as a heteroaromatic compound can be used.
  • the hole blocking layer is provided in contact with the light emitting layer.
  • the hole-blocking layer is a layer containing a material that has electron-transport properties and can block holes. Among the above electron-transporting materials, materials having hole-blocking properties can be used for the hole-blocking layer.
  • the hole-blocking layer can also be called an electron-transporting layer because it has electron-transporting properties. Moreover, among the electron transport layers, a layer having hole blocking properties can also be referred to as a hole blocking layer.
  • the electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer that contains a substance with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds thereof can be used as the substance with a high electron-injecting property.
  • a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as the substance with high electron-injecting properties.
  • the LUMO level of the substance with high electron injection properties has a small difference (specifically, 0.5 eV or less) from the value of the work function of the material used for the cathode.
  • the electron injection layer includes, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)pheno Alkali metals such as latolithium (abbreviation: LiPPP), lithium oxide (LiO x ), cesium carbonate, alkaline earth metals, or compounds thereof can be used.
  • the electron injection layer may have a laminated structure of two or more layers. Examples of the laminated structure include a structure in which lithium fluoride is used for the first layer and ytterbium is provided for the second layer.
  • the electron injection layer may have an electron-transporting material.
  • a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
  • the lowest unoccupied molecular orbital (LUMO) level of an organic compound having an unshared electron pair is preferably -3.6 eV or more and -2.3 eV or less.
  • CV cyclic voltammetry
  • photoelectron spectroscopy optical absorption spectroscopy
  • inverse photoemission spectroscopy etc. are used to determine the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound. can be estimated.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • a charge generation layer (also called an intermediate layer) is provided between two light-emitting units.
  • the intermediate layer has a function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between the pair of electrodes.
  • charge generation layer materials applicable to the electron injection layer, such as lithium, can be suitably used. Also, for the charge generation layer, for example, a material applicable to the hole injection layer can be suitably used. A layer containing a hole-transporting material and an acceptor material (electron-accepting material) can be used as the charge-generating layer. A layer containing an electron-transporting material and a donor material can be used for the charge generating layer. By forming such a charge generation layer, it is possible to suppress an increase in drive voltage when light emitting units are stacked.
  • the charge generation layer has at least a charge generation region.
  • the charge generation region preferably contains an acceptor material, for example, preferably contains a hole transport material and an acceptor material applicable to the hole injection layer described above.
  • the charge generation layer preferably has a layer containing a substance with high electron injection properties. This layer can also be called an electron injection buffer layer.
  • the electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. Since the injection barrier between the charge generation region and the electron transport layer can be relaxed by providing the electron injection buffer layer, electrons generated in the charge generation region can be easily injected into the electron transport layer.
  • the electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and can be configured to contain, for example, an alkali metal compound or an alkaline earth metal compound.
  • the electron injection buffer layer preferably has an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen. Lithium (Li 2 O), etc.) is more preferred.
  • the above materials applicable to the electron injection layer can be preferably used.
  • the charge generation layer preferably has a layer containing a substance with high electron transport properties. Such layers may also be referred to as electron relay layers.
  • the electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. If the charge generation layer does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer.
  • the electron relay layer has a function of smoothly transferring electrons by preventing interaction between the charge generation region and the electron injection buffer layer (or electron transport layer).
  • a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviation: CuPc), or a metal complex having a metal-oxygen bond and an aromatic ligand.
  • charge generation region the electron injection buffer layer, and the electron relay layer described above may not be clearly distinguishable depending on their cross-sectional shape or characteristics.
  • the charge generation layer may have a donor material instead of the acceptor material.
  • the charge-generating layer may have a layer containing an electron-transporting material and a donor material, applicable to the electron-injecting layer described above.
  • a pn-type or pin-type photodiode can be used as the light receiving device.
  • a light-receiving device functions as a photoelectric conversion device (also referred to as a photoelectric conversion element) that detects light incident on the light-receiving device and generates an electric charge. The amount of charge generated from the light receiving device is determined based on the amount of light incident on the light receiving device.
  • organic photodiode having a layer containing an organic compound as the light receiving device.
  • Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so that they can be applied to various display devices.
  • the light receiving device has a layer 765 between a pair of electrodes (lower electrode 761 and upper electrode 762).
  • Layer 765 has at least one active layer and may have other layers.
  • FIG. 29B is a modification of the layer 765 included in the light receiving device shown in FIG. 29A. Specifically, the light-receiving device shown in FIG. have.
  • the active layer 767 functions as a photoelectric conversion layer.
  • the layer 766 has one or both of a hole transport layer and an electron blocking layer.
  • Layer 768 also includes one or both of an electron-transporting layer and a hole-blocking layer.
  • Both low-molecular-weight compounds and high-molecular-weight compounds can be used in the light-receiving device, and inorganic compounds may be included.
  • the layers constituting the light-receiving device can be formed by methods such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, and a coating method.
  • the active layer of the light receiving device contains a semiconductor.
  • the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds.
  • an organic semiconductor is used as the semiconductor included in the active layer.
  • the light-emitting layer and the active layer can be formed by the same method (for example, a vacuum deposition method), and a manufacturing apparatus can be shared, which is preferable.
  • Electron-accepting organic semiconductor materials such as fullerenes (eg, C 60 , C 70 , etc.) and fullerene derivatives are examples of the n-type semiconductor material of the active layer.
  • fullerene derivatives include [6,6]-Phenyl- C71 -butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl- C61 -butyric acid methyl ester (abbreviation: PC60BM), 1' , 1′′,4′,4′′-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2′′,3′′][5,6]fullerene -C60 (abbreviation: ICBA) and the like.
  • PC70BM [6,6]-Phenyl- C71 -butyric acid methyl ester
  • PC60BM [6,6]-Phenyl- C61 -butyric acid
  • n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic diimide (abbreviation: Me-PTCDI), and 2,2' -(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation) : FT2TDMN).
  • Me-PTCDI N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic diimide
  • FT2TDMN 2,2' -(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)
  • n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc. mentioned.
  • Materials for the p-type semiconductor of the active layer include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin (II) ) electron-donating organic semiconductor materials such as phthalocyanine (SnPc), quinacridone, and rubrene.
  • CuPc copper
  • DBP tetraphenyldibenzoperiflanthene
  • ZnPc zinc phthalocyanine
  • II) electron-donating organic semiconductor materials such as phthalocyanine (SnPc), quinacridone, and rubrene.
  • Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Furthermore, materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, and porphyrins.
  • phthalocyanine derivatives phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.
  • the HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material.
  • the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.
  • a spherical fullerene as the electron-accepting organic semiconductor material, and use an organic semiconductor material with a shape close to a plane as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transportability can be enhanced.
  • PBDB-T polymer compound such as a PBDB-T derivative
  • a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.
  • the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
  • the active layer may be formed by laminating an n-type semiconductor and a p-type semiconductor.
  • a third material may be mixed in addition to the n-type semiconductor material and the p-type semiconductor material.
  • the third material may be a low-molecular compound or a high-molecular compound.
  • the light-receiving device further includes, as layers other than the active layer, a layer containing a highly hole-transporting substance, a highly electron-transporting substance, a bipolar substance (substances having high electron-transporting and hole-transporting properties), or the like. may have.
  • the layer is not limited to the above, and may further include a layer containing a highly hole-injecting substance, a hole-blocking material, a highly electron-injecting substance, an electron-blocking material, or the like.
  • materials that can be used in the above-described light-emitting device can be used.
  • hole-transporting materials or electron-blocking materials polymer compounds such as poly(3,4-ethylenedioxythiophene)/polystyrene sulfonic acid (abbreviation: PEDOT/PSS), molybdenum oxide, and copper iodide Inorganic compounds such as (CuI) can be used.
  • PEDOT/PSS poly(3,4-ethylenedioxythiophene)/polystyrene sulfonic acid
  • CuI copper iodide Inorganic compounds
  • an inorganic compound such as zinc oxide (ZnO) or an organic compound such as polyethyleneimine ethoxylate (abbreviation: PEIE) can be used.
  • the light receiving device may have, for example, a mixed film of PEIE and ZnO.
  • Display device having photodetection function In the display device of one embodiment of the present invention, light-emitting devices are arranged in matrix in the display portion, and an image can be displayed on the display portion. Further, light receiving devices are arranged in a matrix in the display section, and the display section has one or both of an imaging function and a sensing function in addition to an image display function.
  • the display part can be used for an image sensor or a touch sensor. That is, by detecting light on the display portion, an image can be captured, or proximity or contact of an object (a finger, hand, pen, or the like) can be detected.
  • the display device of one embodiment of the present invention can use a light-emitting device as a light source of a sensor.
  • the light-receiving device can detect the reflected light (or scattered light).
  • imaging or touch detection is possible.
  • a display device of one embodiment of the present invention includes a light-emitting device and a light-receiving device in a pixel.
  • a display device of one embodiment of the present invention uses an organic EL device as a light-emitting device and an organic photodiode as a light-receiving device.
  • An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
  • a display device having a light-emitting device and a light-receiving device in a pixel, since the pixel has a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, not only can an image be displayed by all the sub-pixels of the display device, but also some sub-pixels can emit light as a light source and the remaining sub-pixels can be used to display an image.
  • the display device can capture an image using the light receiving device.
  • the display device of this embodiment can be used as a scanner.
  • an image sensor can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and artery shapes), or faces.
  • an image sensor can be used to capture an image around the eye, the surface of the eye, or the inside of the eye (such as the fundus) of the user of the wearable device. Therefore, the wearable device can have a function of detecting any one or more selected from the user's blink, black eye movement, and eyelid movement.
  • the light-receiving device can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor).
  • a touch sensor also called a direct touch sensor
  • a near-touch sensor also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor.
  • the touch sensor or near-touch sensor can detect the proximity or contact of an object (finger, hand, pen, etc.).
  • a touch sensor can detect an object by bringing the display device into direct contact with the object.
  • the near-touch sensor can detect the object even if the object does not touch the display device.
  • the display device can detect the object when the distance between the display device and the object is 0.1 mm or more and 300 mm or less, preferably 3 mm or more and 50 mm or less.
  • the display device can be operated without direct contact with the object, in other words, the display device can be operated without contact.
  • the risk of staining or scratching the display device can be reduced, or the object can be displayed without directly touching the stain (for example, dust or virus) attached to the display device. It becomes possible to operate the device.
  • a display device of one embodiment of the present invention can have a variable refresh rate.
  • the power consumption can be reduced by adjusting the refresh rate (for example, in the range of 1 Hz to 240 Hz) according to the content displayed on the display device.
  • the drive frequency of the touch sensor or the near-touch sensor may be changed according to the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the driving frequency of the touch sensor or the near-touch sensor can be higher than 120 Hz (typically 240 Hz). With this structure, low power consumption can be achieved and the response speed of the touch sensor or the near touch sensor can be increased.
  • the display device 100 shown in FIGS. 29C to 29E has a layer 353 having a light receiving device, a functional layer 355, and a layer 357 having a light emitting device between a substrate 351 and a substrate 359.
  • FIG. 29C to 29E has a layer 353 having a light receiving device, a functional layer 355, and a layer 357 having a light emitting device between a substrate 351 and a substrate 359.
  • the functional layer 355 has a circuit for driving the light receiving device and a circuit for driving the light emitting device.
  • One or more of switches, transistors, capacitors, resistors, wirings, terminals, and the like can be provided in the functional layer 355 . Note that in the case of driving the light-emitting device and the light-receiving device by a passive matrix method, a structure in which the switch and the transistor are not provided may be employed.
  • a finger 352 in contact with the display device 100 reflects light emitted by a light emitting device in a layer 357 having a light emitting device, so that a light receiving device in a layer 353 having a light receiving device reflects the light. Detect light. Thereby, it is possible to detect that the finger 352 touches the display device 100 .
  • FIGS. 29D and 29E it may have a function of detecting or imaging an object that is close to (not in contact with) the display device.
  • FIG. 29D shows an example of detecting a finger of a person
  • FIG. 29E shows an example of detecting information around, on the surface of, or inside the human eye (number of blinks, eye movement, eyelid movement, etc.).
  • An electronic device of this embodiment includes the display device of one embodiment of the present invention in a display portion.
  • the display device of one embodiment of the present invention can easily have high definition and high resolution. Therefore, it can be used for display portions of various electronic devices.
  • Examples of electronic devices include electronic devices with relatively large screens such as televisions, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras. , digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, sound reproduction devices, and the like.
  • the display device of one embodiment of the present invention can have high definition, it can be suitably used for an electronic device having a relatively small display portion.
  • electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, and MR devices. wearable devices that can be attached to
  • a display device of one embodiment of the present invention includes HD (1280 ⁇ 720 pixels), FHD (1920 ⁇ 1080 pixels), WQHD (2560 ⁇ 1440 pixels), WQXGA (2560 ⁇ 1600 pixels), 4K (2560 ⁇ 1600 pixels), 3840 ⁇ 2160) and 8K (7680 ⁇ 4320 pixels).
  • the resolution it is preferable to set the resolution to 4K, 8K, or higher.
  • the pixel density (definition) of the display device of one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, and 3000 ppi or more.
  • the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, 16:10.
  • the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage , power, radiation, flow, humidity, gradient, vibration, odor or infrared sensing, detection or measurement).
  • the electronic device of this embodiment can have various functions. For example, functions to display various information (still images, moving images, text images, etc.) on the display unit, touch panel functions, calendars, functions to display the date or time, functions to execute various software (programs), wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.
  • FIGS. 30A to 30D An example of a wearable device that can be worn on the head will be described with reference to FIGS. 30A to 30D.
  • These wearable devices have at least one of a function of displaying AR content, a function of displaying VR content, a function of displaying SR content, and a function of displaying MR content.
  • the electronic device has a function of displaying at least one content such as AR, VR, SR, and MR, it is possible to enhance the immersive feeling of the user.
  • Electronic device 700A shown in FIG. 30A and electronic device 700B shown in FIG. It has a control section (not shown), an imaging section (not shown), a pair of optical members 753 , a frame 757 and a pair of nose pads 758 .
  • the display device of one embodiment of the present invention can be applied to the display panel 751 . Therefore, the electronic device can display images with extremely high definition.
  • the electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto the display area 756 of the optical member 753. Since the optical member 753 has translucency, the user can see the image displayed in the display area superimposed on the transmitted image visually recognized through the optical member 753 . Therefore, the electronic device 700A and the electronic device 700B are electronic devices capable of AR display.
  • the electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front as an imaging unit. Further, the electronic devices 700A and 700B each include an acceleration sensor such as a gyro sensor to detect the orientation of the user's head and display an image corresponding to the orientation in the display area 756. You can also
  • the communication unit has a wireless communication device, and can supply video signals, etc. by the wireless communication device.
  • a connector to which a cable to which a video signal and a power supply potential are supplied may be provided.
  • a battery is provided in the electronic device 700A and the electronic device 700B, and can be charged wirelessly and/or wiredly.
  • the housing 721 may be provided with a touch sensor module.
  • the touch sensor module has a function of detecting that the outer surface of the housing 721 is touched.
  • the touch sensor module can detect a user's tap operation or slide operation and execute various processes. For example, it is possible to perform processing such as pausing or resuming a moving image by a tap operation, and fast-forward or fast-reverse processing can be performed by a slide operation. Further, by providing a touch sensor module for each of the two housings 721, the range of operations can be expanded.
  • Various touch sensors can be applied to the touch sensor module.
  • various methods such as a capacitance method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, and an optical method can be adopted.
  • a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as the light receiving device.
  • a photoelectric conversion device also referred to as a photoelectric conversion element
  • One or both of an inorganic semiconductor and an organic semiconductor can be used for the active layer of the photoelectric conversion device.
  • Electronic device 800A shown in FIG. 30C and electronic device 800B shown in FIG. It has a pair of imaging units 825 and a pair of lenses 832 .
  • the display device of one embodiment of the present invention can be applied to the display portion 820 . Therefore, the electronic device can display images with extremely high definition. This allows the user to feel a high sense of immersion.
  • the display unit 820 is provided inside the housing 821 at a position where it can be viewed through the lens 832 . By displaying different images on the pair of display portions 820, three-dimensional display using parallax can be performed.
  • Each of the electronic device 800A and the electronic device 800B can be said to be an electronic device for VR.
  • a user wearing electronic device 800 ⁇ /b>A or electronic device 800 ⁇ /b>B can view an image displayed on display unit 820 through lens 832 .
  • the electronic device 800A and the electronic device 800B each have a mechanism that can adjust the left and right positions of the lens 832 and the display unit 820 so that they are optimally positioned according to the position of the user's eyes. preferably. In addition, it is preferable to have a mechanism for adjusting focus by changing the distance between the lens 832 and the display portion 820 .
  • the wearing section 823 allows the user to wear the electronic device 800A or the electronic device 800B on the head.
  • the shape is illustrated as a temple of eyeglasses (also referred to as a temple), but the shape is not limited to this.
  • the mounting portion 823 may be worn by the user, and may be, for example, a helmet-type or band-type shape.
  • the imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820 . An image sensor can be used for the imaging unit 825 . Also, a plurality of cameras may be provided so as to be able to deal with a plurality of angles of view such as telephoto and wide angle.
  • a distance measuring sensor capable of measuring the distance of an object
  • the imaging unit 825 is one aspect of the detection unit.
  • the detection unit can use, for example, an image sensor or a distance image sensor such as LIDAR (Light Detection and Ranging).
  • LIDAR Light Detection and Ranging
  • the electronic device 800A may have a vibration mechanism that functions as bone conduction earphones.
  • a vibration mechanism that functions as bone conduction earphones.
  • one or more of the display portion 820, the housing 821, and the mounting portion 823 can be provided with the vibration mechanism.
  • the user can enjoy video and audio simply by wearing the electronic device 800A without the need for separate audio equipment such as headphones, earphones, or speakers.
  • the electronic device 800A and the electronic device 800B may each have an input terminal.
  • the input terminal can be connected to a cable that supplies a video signal from a video output device or the like and power or the like for charging a battery provided in the electronic device.
  • the electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750.
  • Earphone 750 has a communication unit (not shown) and has a wireless communication function.
  • the earphone 750 can receive information (eg, audio data) from the electronic device by wireless communication function.
  • information eg, audio data
  • electronic device 700A shown in FIG. 30A has a function of transmitting information to earphone 750 by a wireless communication function.
  • electronic device 800A shown in FIG. 30C has a function of transmitting information to earphone 750 by a wireless communication function.
  • the electronic device may have an earphone part.
  • Electronic device 700B shown in FIG. 30B has earphone section 727 .
  • the earphone section 727 and the control section can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 727 and the control section may be arranged inside the housing 721 or the mounting section 723 .
  • the electronic device 800B shown in FIG. 30D has an earphone section 827.
  • the earphone unit 827 and the control unit 824 can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 827 and the control section 824 may be arranged inside the housing 821 or the mounting section 823 .
  • the earphone section 827 and the mounting section 823 may have magnets. Accordingly, the earphone section 827 can be fixed to the mounting section 823 by magnetic force, which is preferable because it facilitates storage.
  • the electronic device may have an audio output terminal to which earphones or headphones can be connected. Also, the electronic device may have one or both of an audio input terminal and an audio input mechanism.
  • the voice input mechanism can use, for example, a sound collecting device such as a microphone. By providing the electronic device with a voice input mechanism, the electronic device may function as a so-called headset.
  • the electronic device of one embodiment of the present invention is suitable for both glasses type (electronic device 700A, electronic device 700B, etc.) and goggle type (electronic device 800A, electronic device 800B, etc.). is.
  • An electronic device of one embodiment of the present invention can transmit information to earphones by wire or wirelessly.
  • An electronic device 6500 shown in FIG. 31A is a mobile information terminal that can be used as a smart phone.
  • the electronic device 6500 has a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • a display portion 6502 has a touch panel function.
  • the display device of one embodiment of the present invention can be applied to the display portion 6502 .
  • FIG. 31B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.
  • a light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, and a printer are placed in a space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown).
  • a portion of the display panel 6511 is folded back in a region outside the display portion 6502, and the FPC 6515 is connected to the folded portion.
  • An IC6516 is mounted on the FPC6515.
  • the FPC 6515 is connected to terminals provided on the printed circuit board 6517 .
  • the flexible display of one embodiment of the present invention can be applied to the display panel 6511 . Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, the thickness of the electronic device can be reduced and the large-capacity battery 6518 can be mounted. In addition, by folding back part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.
  • a television set 7100 has a display portion 7000 incorporated in a housing 7101 .
  • a configuration in which a housing 7101 is supported by a stand 7103 is shown.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • the operation of the television apparatus 7100 shown in FIG. 31C can be performed using operation switches provided on the housing 7101 and a separate remote controller 7111 .
  • the display portion 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
  • the remote controller 7111 may have a display unit that displays information output from the remote controller 7111 .
  • a channel and a volume can be operated with operation keys or a touch panel provided in the remote controller 7111 , and an image displayed on the display portion 7000 can be operated.
  • the television device 7100 is configured to include a receiver, a modem, and the like.
  • the receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver, or between the receivers, etc.) information communication. is also possible.
  • FIG. 31D shows an example of a notebook personal computer.
  • a notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • FIGS. 31E and 31F An example of digital signage is shown in FIGS. 31E and 31F.
  • a digital signage 7300 shown in FIG. 31E includes a housing 7301, a display unit 7000, speakers 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), connection terminals, various sensors, a microphone, and the like.
  • FIG. 31F is a digital signage 7400 attached to a cylindrical post 7401.
  • a digital signage 7400 has a display section 7000 provided along the curved surface of a pillar 7401 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 in FIGS. 31E and 31F.
  • the wider the display unit 7000 the more information can be provided at once.
  • the wider the display unit 7000 the more conspicuous it is, and the more effective the advertisement can be, for example.
  • a touch panel By applying a touch panel to the display unit 7000, not only can images or moving images be displayed on the display unit 7000, but also the user can intuitively operate the display unit 7000, which is preferable. Further, when used for providing information such as route information or traffic information, usability can be enhanced by intuitive operation.
  • the digital signage 7300 or digital signage 7400 is preferably capable of cooperating with an information terminal 7311 or information terminal 7411 such as a smartphone possessed by the user through wireless communication.
  • advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411 .
  • display on the display portion 7000 can be switched.
  • the digital signage 7300 or 7400 can execute a game using the screen of the information terminal 7311 or 7411 as an operating means (controller). This allows an unspecified number of users to simultaneously participate in and enjoy the game.
  • the electronic device shown in FIGS. 32A to 32G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, sensors 9007 (force, displacement, position, speed , acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays , detection or measurement), a microphone 9008, and the like.
  • the electronic devices shown in FIGS. 32A to 32G have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display the date or time, a function to control processing by various software (programs), It can have a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device may be provided with a camera or the like, and may have a function of capturing a still image or moving image and storing it in a recording medium (external or built into the camera), a function of displaying the captured image on a display unit, and the like. .
  • FIGS. 32A to 32G Details of the electronic devices shown in FIGS. 32A to 32G will be described below.
  • FIG. 32A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 can be used as a smart phone, for example.
  • the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
  • the mobile information terminal 9101 can display text and image information on its multiple surfaces.
  • FIG. 32A shows an example in which three icons 9050 are displayed.
  • Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display portion 9001 . Examples of the information 9051 include notification of incoming e-mail, SNS, phone call, title of e-mail or SNS, sender name, date and time, remaining battery power, radio wave intensity, and the like.
  • an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 32B is a perspective view showing the mobile information terminal 9102.
  • the portable information terminal 9102 has a function of displaying information on three or more sides of the display portion 9001 .
  • information 9052, information 9053, and information 9054 are displayed on different surfaces.
  • the user can confirm the information 9053 displayed at a position where the mobile information terminal 9102 can be viewed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the chest pocket of the clothes.
  • the user can check the display without taking out the portable information terminal 9102 from the pocket, and can determine, for example, whether to receive a call.
  • FIG. 32C is a perspective view showing the tablet terminal 9103.
  • the tablet terminal 9103 can execute various applications such as mobile phone, e-mail, reading and creating text, playing music, Internet communication, and computer games.
  • the tablet terminal 9103 has a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and connection terminals on the bottom. 9006.
  • FIG. 32D is a perspective view showing a wristwatch-type mobile information terminal 9200.
  • the mobile information terminal 9200 can be used as a smart watch (registered trademark), for example.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • the mobile information terminal 9200 can also make hands-free calls by mutual communication with a headset capable of wireless communication, for example.
  • the portable information terminal 9200 can transmit data to and from another information terminal through the connection terminal 9006, and can be charged. Note that the charging operation may be performed by wireless power supply.
  • FIG. 32E to 32G are perspective views showing a foldable personal digital assistant 9201.
  • FIG. 32E is a state in which the portable information terminal 9201 is unfolded
  • FIG. 32G is a state in which it is folded
  • FIG. 32F is a perspective view in the middle of changing from one of FIGS. 32E and 32G to the other.
  • the portable information terminal 9201 has excellent portability in the folded state, and has excellent display visibility due to a seamless wide display area in the unfolded state.
  • a display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055 .
  • the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

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JP2017059314A (ja) * 2015-09-14 2017-03-23 株式会社ジャパンディスプレイ 表示装置
JP2017091946A (ja) * 2015-11-16 2017-05-25 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
JP2017227858A (ja) * 2015-08-28 2017-12-28 株式会社半導体エネルギー研究所 表示装置
WO2019198164A1 (ja) * 2018-04-10 2019-10-17 シャープ株式会社 表示装置およびその製造方法

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JP2017227858A (ja) * 2015-08-28 2017-12-28 株式会社半導体エネルギー研究所 表示装置
JP2017059314A (ja) * 2015-09-14 2017-03-23 株式会社ジャパンディスプレイ 表示装置
JP2017091946A (ja) * 2015-11-16 2017-05-25 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
WO2019198164A1 (ja) * 2018-04-10 2019-10-17 シャープ株式会社 表示装置およびその製造方法

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