WO2023125250A3 - 一种无过冲快速启动带隙基准电路、芯片及电子设备 - Google Patents

一种无过冲快速启动带隙基准电路、芯片及电子设备 Download PDF

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Publication number
WO2023125250A3
WO2023125250A3 PCT/CN2022/141152 CN2022141152W WO2023125250A3 WO 2023125250 A3 WO2023125250 A3 WO 2023125250A3 CN 2022141152 W CN2022141152 W CN 2022141152W WO 2023125250 A3 WO2023125250 A3 WO 2023125250A3
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WO
WIPO (PCT)
Prior art keywords
overshoot
bias
bias current
fast start
reference circuit
Prior art date
Application number
PCT/CN2022/141152
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English (en)
French (fr)
Other versions
WO2023125250A2 (zh
Inventor
陈成
李春领
王永寿
高晨阳
Original Assignee
唯捷创芯(天津)电子技术股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 唯捷创芯(天津)电子技术股份有限公司 filed Critical 唯捷创芯(天津)电子技术股份有限公司
Priority to KR1020247000195A priority Critical patent/KR20240015138A/ko
Publication of WO2023125250A2 publication Critical patent/WO2023125250A2/zh
Publication of WO2023125250A3 publication Critical patent/WO2023125250A3/zh
Priority to US18/413,036 priority patent/US20240152172A1/en

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/468—Regulating voltage or current wherein the variable actually regulated by the final control device is dc characterised by reference voltage circuitry, e.g. soft start, remote shutdown
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

一种无过冲快速启动带隙基准电路(100)、芯片及电子设备。带隙基准电路(100)包括偏置电流产生单元(101)和基准核心单元(102)，其中，偏置电流产生单元(101)的输出端与基准核心单元(102)的输入端连接，偏置电流产生单元(101)产生与电源电压无关并且具有零温度系数的偏置电流(I BIAS)，偏置电流(I BIAS)为基准核心单元(102)的输入信号，基准核心单元(102)根据输入的偏置电流(I BIAS)产生预充电电流，并采用预充电方式实现无过冲的快速启动。
PCT/CN2022/141152 2021-12-27 2022-12-22 一种无过冲快速启动带隙基准电路、芯片及电子设备 WO2023125250A2 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020247000195A KR20240015138A (ko) 2021-12-27 2022-12-22 오버슈트가 없이 빠르게 시동하는 밴드갭 기준 회로, 칩 및 전자 장치
US18/413,036 US20240152172A1 (en) 2021-12-27 2024-01-16 Overshoot-free fast start-up bandgap reference circuit, chip, and electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202111607944.1A CN113985957B (zh) 2021-12-27 2021-12-27 一种无过冲快速启动带隙基准电路、芯片及电子设备
CN202111607944.1 2021-12-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/413,036 Continuation US20240152172A1 (en) 2021-12-27 2024-01-16 Overshoot-free fast start-up bandgap reference circuit, chip, and electronic device

Publications (2)

Publication Number Publication Date
WO2023125250A2 WO2023125250A2 (zh) 2023-07-06
WO2023125250A3 true WO2023125250A3 (zh) 2023-09-21

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Country Status (4)

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US (1) US20240152172A1 (zh)
KR (1) KR20240015138A (zh)
CN (1) CN113985957B (zh)
WO (1) WO2023125250A2 (zh)

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* Cited by examiner, † Cited by third party
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CN113985957B (zh) * 2021-12-27 2022-04-05 唯捷创芯(天津)电子技术股份有限公司 一种无过冲快速启动带隙基准电路、芯片及电子设备
CN115047930B (zh) * 2022-05-26 2024-05-17 南京理工大学 一种带隙基准电路
CN116526978B (zh) * 2023-04-06 2024-06-11 北京兆讯恒达技术有限公司 一种抗干扰快速起振的单端晶振电路及电子设备
CN117008676B (zh) * 2023-08-17 2024-05-31 荣湃半导体（上海）有限公司 一种用于带隙基准电路的自启动电路

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JP2009230366A (ja) * 2008-03-21 2009-10-08 Mitsumi Electric Co Ltd 基準電圧発生回路およびリセット回路を内蔵した半導体集積回路
EP2498162A1 (en) * 2011-03-07 2012-09-12 Dialog Semiconductor GmbH Startup circuit for low voltage cascode beta multiplier current generator
CN103809647A (zh) * 2014-03-13 2014-05-21 苏州芯动科技有限公司 一种高电源抑制比基准电压源
CN106155172A (zh) * 2015-03-31 2016-11-23 成都锐成芯微科技有限责任公司 一种具有无过冲特性的启动电路及带隙基准电路
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Publication number Publication date
WO2023125250A2 (zh) 2023-07-06
CN113985957B (zh) 2022-04-05
CN113985957A (zh) 2022-01-28
KR20240015138A (ko) 2024-02-02
US20240152172A1 (en) 2024-05-09

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