WO2023125250A3 - 一种无过冲快速启动带隙基准电路、芯片及电子设备 - Google Patents
一种无过冲快速启动带隙基准电路、芯片及电子设备 Download PDFInfo
- Publication number
- WO2023125250A3 WO2023125250A3 PCT/CN2022/141152 CN2022141152W WO2023125250A3 WO 2023125250 A3 WO2023125250 A3 WO 2023125250A3 CN 2022141152 W CN2022141152 W CN 2022141152W WO 2023125250 A3 WO2023125250 A3 WO 2023125250A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- overshoot
- bias
- bias current
- fast start
- reference circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/468—Regulating voltage or current wherein the variable actually regulated by the final control device is dc characterised by reference voltage circuitry, e.g. soft start, remote shutdown
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020247000195A KR20240015138A (ko) | 2021-12-27 | 2022-12-22 | 오버슈트가 없이 빠르게 시동하는 밴드갭 기준 회로, 칩 및 전자 장치 |
US18/413,036 US20240152172A1 (en) | 2021-12-27 | 2024-01-16 | Overshoot-free fast start-up bandgap reference circuit, chip, and electronic device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111607944.1A CN113985957B (zh) | 2021-12-27 | 2021-12-27 | 一种无过冲快速启动带隙基准电路、芯片及电子设备 |
CN202111607944.1 | 2021-12-27 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US18/413,036 Continuation US20240152172A1 (en) | 2021-12-27 | 2024-01-16 | Overshoot-free fast start-up bandgap reference circuit, chip, and electronic device |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2023125250A2 WO2023125250A2 (zh) | 2023-07-06 |
WO2023125250A3 true WO2023125250A3 (zh) | 2023-09-21 |
Family
ID=79734450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2022/141152 WO2023125250A2 (zh) | 2021-12-27 | 2022-12-22 | 一种无过冲快速启动带隙基准电路、芯片及电子设备 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20240152172A1 (zh) |
KR (1) | KR20240015138A (zh) |
CN (1) | CN113985957B (zh) |
WO (1) | WO2023125250A2 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113985957B (zh) * | 2021-12-27 | 2022-04-05 | 唯捷创芯(天津)电子技术股份有限公司 | 一种无过冲快速启动带隙基准电路、芯片及电子设备 |
CN115047930B (zh) * | 2022-05-26 | 2024-05-17 | 南京理工大学 | 一种带隙基准电路 |
CN116526978B (zh) * | 2023-04-06 | 2024-06-11 | 北京兆讯恒达技术有限公司 | 一种抗干扰快速起振的单端晶振电路及电子设备 |
CN117008676B (zh) * | 2023-08-17 | 2024-05-31 | 荣湃半导体(上海)有限公司 | 一种用于带隙基准电路的自启动电路 |
Citations (8)
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JP2009230366A (ja) * | 2008-03-21 | 2009-10-08 | Mitsumi Electric Co Ltd | 基準電圧発生回路およびリセット回路を内蔵した半導体集積回路 |
EP2498162A1 (en) * | 2011-03-07 | 2012-09-12 | Dialog Semiconductor GmbH | Startup circuit for low voltage cascode beta multiplier current generator |
CN103809647A (zh) * | 2014-03-13 | 2014-05-21 | 苏州芯动科技有限公司 | 一种高电源抑制比基准电压源 |
CN106155172A (zh) * | 2015-03-31 | 2016-11-23 | 成都锐成芯微科技有限责任公司 | 一种具有无过冲特性的启动电路及带隙基准电路 |
CN110096091A (zh) * | 2019-06-11 | 2019-08-06 | 上海复旦微电子集团股份有限公司 | 一种耐压亚阈值cmos基准源电路 |
CN111610812A (zh) * | 2019-02-26 | 2020-09-01 | 合肥杰发科技有限公司 | 一种带隙基准电源产生电路及集成电路 |
CN113311898A (zh) * | 2021-07-30 | 2021-08-27 | 唯捷创芯(天津)电子技术股份有限公司 | 一种具有电源抑制的ldo电路、芯片及通信终端 |
CN113985957A (zh) * | 2021-12-27 | 2022-01-28 | 唯捷创芯(天津)电子技术股份有限公司 | 一种无过冲快速启动带隙基准电路、芯片及电子设备 |
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US7184204B2 (en) * | 2003-07-01 | 2007-02-27 | Lambda Physik Ag | Master-oscillator power-amplifier (MOPA) excimer or molecular fluorine laser system with long optics lifetime |
JPWO2011033708A1 (ja) * | 2009-09-18 | 2013-02-07 | パナソニック株式会社 | ドライバ回路および映像システム |
CN103809645B (zh) * | 2014-03-05 | 2015-05-27 | 电子科技大学 | 一种用于宽电源带隙基准源的启动电路 |
US10145728B2 (en) * | 2014-09-15 | 2018-12-04 | Stmicroelectronics S.R.L. | Reception and transmission circuit for a capacitive micromachined ultrasonic transducer |
CN104932601B (zh) * | 2015-06-26 | 2017-11-07 | 华南理工大学 | 一种高电源抑制比的带隙基准电压源 |
CN109947169B (zh) * | 2019-04-23 | 2020-03-31 | 电子科技大学 | 一种具有预稳压结构的高电源抑制比带隙基准电路 |
CN110568898B (zh) * | 2019-09-25 | 2021-06-08 | 上海华虹宏力半导体制造有限公司 | 带隙基准源的启动电路 |
CN111240394B (zh) * | 2020-01-15 | 2021-11-09 | 西安电子科技大学 | 带预稳压结构的无运放带隙基准电路 |
-
2021
- 2021-12-27 CN CN202111607944.1A patent/CN113985957B/zh active Active
-
2022
- 2022-12-22 WO PCT/CN2022/141152 patent/WO2023125250A2/zh active Application Filing
- 2022-12-22 KR KR1020247000195A patent/KR20240015138A/ko unknown
-
2024
- 2024-01-16 US US18/413,036 patent/US20240152172A1/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009230366A (ja) * | 2008-03-21 | 2009-10-08 | Mitsumi Electric Co Ltd | 基準電圧発生回路およびリセット回路を内蔵した半導体集積回路 |
EP2498162A1 (en) * | 2011-03-07 | 2012-09-12 | Dialog Semiconductor GmbH | Startup circuit for low voltage cascode beta multiplier current generator |
CN103809647A (zh) * | 2014-03-13 | 2014-05-21 | 苏州芯动科技有限公司 | 一种高电源抑制比基准电压源 |
CN106155172A (zh) * | 2015-03-31 | 2016-11-23 | 成都锐成芯微科技有限责任公司 | 一种具有无过冲特性的启动电路及带隙基准电路 |
CN111610812A (zh) * | 2019-02-26 | 2020-09-01 | 合肥杰发科技有限公司 | 一种带隙基准电源产生电路及集成电路 |
CN110096091A (zh) * | 2019-06-11 | 2019-08-06 | 上海复旦微电子集团股份有限公司 | 一种耐压亚阈值cmos基准源电路 |
CN113311898A (zh) * | 2021-07-30 | 2021-08-27 | 唯捷创芯(天津)电子技术股份有限公司 | 一种具有电源抑制的ldo电路、芯片及通信终端 |
CN113985957A (zh) * | 2021-12-27 | 2022-01-28 | 唯捷创芯(天津)电子技术股份有限公司 | 一种无过冲快速启动带隙基准电路、芯片及电子设备 |
Also Published As
Publication number | Publication date |
---|---|
WO2023125250A2 (zh) | 2023-07-06 |
CN113985957B (zh) | 2022-04-05 |
CN113985957A (zh) | 2022-01-28 |
KR20240015138A (ko) | 2024-02-02 |
US20240152172A1 (en) | 2024-05-09 |
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