WO2023125072A1 - Diode électroluminescente et son procédé de préparation - Google Patents

Diode électroluminescente et son procédé de préparation Download PDF

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Publication number
WO2023125072A1
WO2023125072A1 PCT/CN2022/139562 CN2022139562W WO2023125072A1 WO 2023125072 A1 WO2023125072 A1 WO 2023125072A1 CN 2022139562 W CN2022139562 W CN 2022139562W WO 2023125072 A1 WO2023125072 A1 WO 2023125072A1
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Prior art keywords
layer
electron transport
metal
emitting diode
light
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PCT/CN2022/139562
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English (en)
Chinese (zh)
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张天朔
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Tcl科技集团股份有限公司
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Publication of WO2023125072A1 publication Critical patent/WO2023125072A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present application relates to the field of optoelectronic technology, in particular to a light emitting diode and a preparation method thereof.
  • light-emitting diode technology As a new type of display lighting technology, light-emitting diode technology has good energy saving, reliability, safety and environmental friendliness, so it has broad development prospects and is still one of the important research directions of display lighting.
  • the main structure of a light emitting diode includes a cathode, an anode, a hole transport layer, an electron transport layer and a light emitting layer.
  • the light-emitting diode with cathode, anode, hole transport layer, electron transport layer and light-emitting layer structure has not yet reached an ideal value in terms of brightness, efficiency and lifetime.
  • each film layer material such as the electron transport layer material
  • the light emitted by the light-emitting layer will cause non-dissipative loss due to the light absorption of the film in the direction of its exit, resulting in the brightness of the light-emitting diode and Efficiency drops.
  • the application provides a light emitting diode and a preparation method thereof.
  • the application provides a light emitting diode, including:
  • an anode an anode, a cathode, and a light-emitting layer arranged between the anode and the cathode;
  • a composite electron transport layer the composite electron transport layer is arranged between the cathode and the light-emitting layer, the material of the composite electron transport layer includes an electron transport material and a metal salt, and the metal elements in the metal salt are selected from group VIII elements;
  • a metal layer the metal layer is arranged between the cathode and the composite electron transport layer, the material of the metal layer is doped or undoped metal element, and the metal elements in the metal element are selected from group VIII elements.
  • the ratio of the amount of the metal salt to the electron transport material is 0.04 ⁇ 0.1.
  • the ratio of the amount of the metal element to the amount of the electron transport material is 0.02-0.033.
  • the metal salt is selected from one or more of ferric chloride, cobalt chloride, ferric acetate, cobalt acetate, ferric stearate, ferric nitrate, and cobalt nitrate.
  • the metal element is selected from one or more of nickel, palladium, and platinum.
  • the doping element in the doped metal element is selected from group VIII elements, and the doping element is different from the metal element in the metal element.
  • the electron transport material is selected from one or more of doped or undoped semiconductor nanoparticles and organic electron transport materials.
  • the electron transport material is selected from doped or undoped TiO 2 , ZnO, ZrO, SnO 2 , WO 3 , Ta 2 O 3 , HfO 3 , Al 2 O 3.
  • the doping elements of the electron transport material are selected from one or more of Al, Mg, In, Li, Ga, Cd, Cs, and Cu.
  • the light emitting diode is one of a light emitting diode with an upright structure and a light emitting diode with an inverted structure.
  • the light emitting diode is one of quantum dot light emitting diodes, organic light emitting diodes, and micron light emitting diodes.
  • the quantum dot light-emitting diode includes a quantum dot light-emitting layer; the material of the quantum dot light-emitting layer is selected from CdSe, CdS, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdSeSTe, ZnSeSTe, CdZnSeSTe, CdSe/ZnS, CdZnSe/ZnS, CdS/CdZnS, InP, InAs, InAsP, InP/InAsP, PbS, Pb Se, One or more of PbTe, Pb
  • a method for preparing a light-emitting diode comprising:
  • the material of the composite electron transport layer includes an electron transport material and a metal salt, and the metal elements in the metal salt are selected from group VIII elements;
  • the material of the metal layer is doped or undoped metal element, and the metal element in the metal element is selected from group VIII elements.
  • the above steps of depositing and forming a laminated composite electron transport layer and metal layer include:
  • a metal layer is formed by depositing a metal element on the composite electron transport layer.
  • the above curing to form the composite electron transport layer is achieved by exposing the film layer of the electron transport material deposited with the metal salt to the air, and the way of exposure to the air includes exposing the film layer of the electron transport material deposited with the metal salt to the air.
  • the electron transport material film layer is placed in the air environment for 0.25 ⁇ 1min.
  • the above-mentioned curing to form a composite electron transport layer is realized by ultraviolet light irradiation, and the ultraviolet light irradiation method includes utilizing ultraviolet light to irradiate an electron transport material film layer deposited with a metal salt for 0.25 ⁇ 30min.
  • a method for preparing a light-emitting diode comprising:
  • the material of the composite electron transport layer includes an electron transport material and a metal salt, and the metal elements in the metal salt are selected from group VIII elements;
  • the material of the metal layer is doped or undoped metal element, and the metal element in the metal element is selected from group VIII elements.
  • the above steps of depositing and forming the stacked metal layer and the composite electron transport layer include:
  • Metal salt is deposited on the metal layer, and before the film layer of the metal salt is solidified, an electron transport material is deposited on the film layer of the metal salt to obtain a film layer of the metal salt deposited with the electron transport material, which is cured to form a composite electron transport layer.
  • the above-mentioned curing to form a composite electron transport layer is achieved by exposing the metal salt film layer deposited with the electron transport material to the air.
  • the metal salt film layer of the material is placed in the air environment for 0.25 ⁇ 1min.
  • the above-mentioned curing to form the composite electron transport layer is realized by ultraviolet light irradiation, and the ultraviolet light irradiation method includes 0.25 ⁇ 30min.
  • the light-emitting diode provided by this application includes a composite electron transport layer formed by metal salts of Group VIII metals and electron transport materials.
  • the composite electron transport layer has a higher film transmittance, and the defects in the film layer Less, can effectively reduce the probability of the outgoing light being absorbed by defects, thereby enhancing the device transmittance of the light emitting diode.
  • a metal layer including Group VIII elements laminated with the above-mentioned composite electron transport layer is provided in the light-emitting diode of the present application.
  • the metal layer has high electrical conductivity, and can effectively balance the increase caused by the introduction of the metal salt of the above-mentioned Group VIII metal.
  • High sheet resistance is conducive to the transport of carriers and improves device efficiency.
  • the composite electron transport layer and the metal layer in the light-emitting diode of the present application complement each other and cooperate with each other, so that the light-emitting diode of the present application has higher brightness and efficiency.
  • FIG. 1 is a schematic structural view of a quantum dot light-emitting diode provided in Example 1 of the present application;
  • Example 2 is a schematic flow diagram of a method for manufacturing a quantum dot light-emitting diode with an upright structure provided in Example 1 of the present application;
  • FIG. 3 is a schematic structural diagram of a quantum dot light-emitting diode provided in Embodiment 7 of the present application;
  • FIG. 4 is a schematic flow diagram of a method for manufacturing a quantum dot light-emitting diode with an upright structure provided in Embodiment 7 of the present application;
  • Fig. 5 is a schematic structural diagram of a quantum dot light-emitting diode provided in Embodiment 8 of the present application;
  • FIG. 6 is a schematic flowchart of a method for manufacturing an inverted quantum dot light-emitting diode provided in Embodiment 8 of the present application.
  • Embodiments of the present application provide a light emitting diode and a manufacturing method thereof. Each will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments. In addition, in the description of the present application, the term “including” means “including but not limited to”. The terms first, second, third, etc. are used for designation only and do not impose numerical requirements or establish an order.
  • expressions such as “one or more” refer to one or more of the listed items, and “multiple” refers to any combination of two or more of these items, including single items (species) ) or any combination of plural items (species), for example, “at least one (species) of a, b, or c” or “at least one (species) of a, b, and c” can mean: a ,b,c,a-b (that is, a and b),a-c,b-c, or a-b-c, where a,b,c can be single or multiple.
  • the application provides a light emitting diode, including:
  • an anode an anode, a cathode, and a light-emitting layer arranged between the anode and the cathode;
  • a composite electron transport layer the composite electron transport layer is arranged between the cathode and the light-emitting layer, the material of the composite electron transport layer includes an electron transport material and a metal salt, and the metal elements in the metal salt are selected from group VIII elements;
  • a metal layer the metal layer is arranged between the cathode and the composite electron transport layer, the material of the metal layer is doped or undoped metal element, and the metal elements in the metal element are selected from group VIII elements.
  • the composite electron transport layer containing the metal salt has higher transmittance, thereby making the light-emitting diode have higher brightness.
  • the metal layer stacked with the composite electron transport layer can effectively balance the sheet resistance and improve the efficiency of the light emitting diode.
  • the above-mentioned stacking arrangement of the composite electron transport layer and the light-emitting layer is a stacking arrangement in a broad sense, that is, the composite electron transport layer can be directly in contact with the light-emitting layer and stacked, or there can be other film layers between the composite electron transport layer and the light-emitting layer. Case cascading settings.
  • the metal elements in the metal layer and the metal elements in the metal salt are elements of the same group (Group VIII), so the metal atoms in the metal layer and the metal atoms in the metal salt can have similar electron orbits.
  • the ratio of the amount of the metal salt to the electron transport material is 0.04 ⁇ 0.1.
  • the ratio range of the amount of the metal salt to the electron transport material may also be a sub-range of the above range, for example, in some embodiments, the ratio of the amount of the metal salt to the electron transport material may be 0.05-0.1, or Can be 0.04 ⁇ 0.067.
  • the ratio of the amount of the simple metal to the electron transport material is 0.02-0.033.
  • the ratio of the amount of the simple metal to the electron transport material is within the above range, the sheet resistance of the composite electron transport layer can be effectively reduced while ensuring that the transmittance of the composite electron transport layer is not significantly reduced.
  • the ratio of the thickness of the film can be used to approximate the ratio of the amount of the substance.
  • the metal salt is selected from one or more of ferric chloride, cobalt chloride, ferric acetate, cobalt acetate, ferric stearate, ferric nitrate and cobalt nitrate.
  • the above-mentioned iron acetate may be iron acetate monohydrate
  • the above-mentioned cobalt acetate may be cobalt acetate tetrahydrate.
  • the metal element may be selected from one or more of nickel, palladium, and platinum.
  • the doping element of the doped metal element is selected from group VIII elements, and the doping element is different from the metal element in the metal element.
  • the electron transport material is selected from one or more of doped or undoped semiconductor nanoparticles and organic electron transport materials.
  • the doped or undoped semiconductor nanoparticles are doped or undoped metal oxides.
  • the electron transport material can be selected from doped or undoped TiO 2 , ZnO, ZrO, SnO 2 , WO 3 , Ta 2 O 3 , HfO 3 , Al 2 O 3 , ZrSiO 4 , BaTiO 3 , BaZrO 3.
  • CdS, ZnSe, and ZnS One or more of CdS, ZnSe, and ZnS.
  • the doping elements of the electron transport material may be selected from one or more of Al, Mg, In, Li, Ga, Cd, Cs, and Cu.
  • the light emitting diode is one of a light emitting diode with an upright structure and a light emitting diode with an inverted structure.
  • the light emitting diode is one of quantum dot light emitting diode (QLED), organic light emitting diode (OLED), and micron light emitting diode (Micro LED).
  • the light-emitting diodes in this application can be quantum dot light-emitting diodes with upright or inverted structures, organic light-emitting diodes with upright or inverted structures, or micron light-emitting diodes with upright or inverted structures.
  • the light emitting diode is a light emitting diode with a vertical structure.
  • the device structure of the light emitting diode in the present application may be one of a three-layer device, a multi-layer device, a top emitter device, a bottom emitter device, and a double-sided emitter device.
  • the quantum dot light-emitting diode includes a quantum dot light-emitting layer; the material of the quantum dot light-emitting layer is selected from CdSe, CdS, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS , CdSeTe, CdTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdSeSTe, ZnSeSTe, CdZnSeSTe, CdSe/ZnS, CdZnSe/ZnS, CdS/CdZnS, InP, InAs, InAsP, InP/InAsP, PbS, PbSe, PbTe, PbSeS, PbSeTe, Pb
  • the material of the quantum dot light-emitting layer is selected from one of II-VI group semiconductor nanocrystals CdSe, CdS, ZnSe, CdS, PbS, PbS and a core-shell structure material composed of the above-mentioned II-VI group semiconductor nanocrystals or more.
  • the embodiment of the present application also provides a method for preparing a light-emitting diode.
  • the above-mentioned preparation method includes:
  • a cathode is formed on the metal layer.
  • the material of the composite electron transport layer includes an electron transport material and a metal salt; the metal elements in the metal salt are selected from Group VIII elements.
  • the material of the metal layer is doped or undoped metal element, and the metal element in the metal element is selected from group VIII elements.
  • the above-mentioned preparation method includes:
  • An anode is formed on the light emitting layer.
  • the material of the composite electron transport layer includes an electron transport material and a metal salt; the metal elements in the metal salt are selected from group VIII elements.
  • the material of the metal layer is doped or undoped metal element, and the metal element in the metal element is selected from group VIII elements.
  • the above expression of depositing another film layer on the film layer is a broad sense, meaning above or above, which can be on the film layer Another film layer can be directly deposited on the film layer, and another film layer can be formed on the film layer, and another film layer can be formed on the other film layer.
  • the composite electron transport layer is deposited and formed by using the above preparation method of light-emitting diodes, the electron transport material and the metal salt can be mixed and deposited directly to form a composite electron transport layer, or the electron transport material and the metal salt can be deposited separately to form a composite electron transport layer. layer.
  • the composite electron transport layer is formed by separately depositing the electron transport material and the metal salt.
  • the deposition method is slightly different according to the structure of the light emitting diode device.
  • the steps of depositing and forming the stacked composite electron transport layer and the metal layer include:
  • a metal layer is formed by depositing a metal element on the composite electron transport layer.
  • the steps of depositing and forming the stacked metal layer and the composite electron transport layer include:
  • Metal salt is deposited on the metal layer, and before the film layer of the metal salt is solidified, an electron transport material is deposited on the film layer of the metal salt to obtain a film layer of the metal salt deposited with the electron transport material, which is cured to form a composite electron transport layer.
  • the materials deposited later should be deposited before the materials deposited earlier are not completely cured and formed into a separate film. On top of the deposited material, in this way, the later deposited material can penetrate into the thin film of the first deposited material, so that Group VIII metal elements can be introduced into the electron transport material crystallization stage to form a composite electron transport layer, reducing the probability of the outgoing light being absorbed by defects , to increase the transmittance.
  • the film layer of the deposited electron transport material and the film layer of the metal salt are not two completely independent film layers, and the film interface between the two There is material in the lower film layer that penetrates into the upper film layer.
  • the metal salt of group VIII metal deposited between the electron transport material film layer and the metal elemental film layer can separate the metal layer from the independent electron transport material film layer, and play a role of interval protection, so that the material at the film layer interface The lattice gap between them is closer, and there are fewer defects at the film interface, so that most of the light can pass through the film interface without being absorbed, and the final brightness of the device is improved.
  • a non-high-temperature cross-linking operation may be used to cure and cross-link the first-deposited material.
  • the above-mentioned curing to form a composite electron transport layer can be achieved by exposing the film layer of the electron transport material deposited with the metal salt to air and/or by irradiating ultraviolet light.
  • the manner of exposing the film layer of the electron transport material deposited with the metal salt to the air includes placing the film layer of the electron transport material deposited with the metal salt in an air environment for 0.25-1 min.
  • the method of irradiating with ultraviolet light includes irradiating the film layer of the electron transport material deposited with the metal salt by ultraviolet light for 0.25-30 minutes.
  • the above-mentioned curing to form a composite electron transport layer can be achieved by exposing the metal salt film layer deposited with the electron transport material to air and/or by irradiating ultraviolet light.
  • the method of exposing the metal salt to the air includes placing the metal salt film layer deposited with the electron transport material in the air environment for 0.25 ⁇ 1min; the method of ultraviolet light irradiation includes using ultraviolet light to irradiate the metal salt film deposited with the electron transport material Layer 0.25 ⁇ 30min.
  • the above-mentioned ultraviolet light irradiation method can be carried out under a protective gas (such as nitrogen, inert gas) atmosphere; the ultraviolet light source can vertically irradiate the device film; the wavelength of the above-mentioned ultraviolet light can be 240 ⁇ 260nm, preferably, the above-mentioned ultraviolet light The wavelength is 254nm.
  • a protective gas such as nitrogen, inert gas
  • the film layer of the electron transport material deposited with the metal salt can be cured only by exposure to the air, or the film layer of the electron transport material deposited with the metal salt can be cured only by ultraviolet light irradiation, or exposed
  • the film layer of the electron transport material deposited with the metal salt is solidified by irradiating ultraviolet light in the air.
  • the film layer of the electron transport material deposited with the metal salt is cured by exposing to air while irradiating with ultraviolet light, the time for exposing to air and irradiating with ultraviolet light should be appropriately shortened.
  • the time for exposing to air and irradiating ultraviolet light can be 0.25 ⁇ 0.5min;
  • the exposure time to the air can be 0.5 ⁇ 1min.
  • the time of ultraviolet light irradiation can be 20 ⁇ 30min.
  • a quantum dot light emitting diode having a structure of anode/hole injection layer/hole transport layer/quantum dot light emitting layer/electron transport layer/cathode can be prepared by the above method for preparing light emitting diodes.
  • the preparation method of the light-emitting diode may include:
  • the material of the anode can be selected from doped or undoped metal oxides, such as ITO, IZO, ITZO, ICO, SnO 2 , In 2 O 3 , Cd:ZnO, F:SnO 2 , In:SnO 2 , Ga: SnO 2 , AZO, etc.; can also be selected from metal materials, such as Ni, Pt, Au, Ag, Cu, Al, Ir; can also be metal materials containing CNT, etc.
  • the ":" in the above expressions such as Cd:ZnO means doping.
  • the above-mentioned anode is an anode with an ITO/metal/ITO structure
  • the above-mentioned ITO is preferably indium-doped ITO
  • the above-mentioned metal can be selected from one or more of Au, Ag, Al, and Cu.
  • the material of the hole injection layer can be selected from poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS) and its derivatives doped with s-MoO3 (PEDOT:PSS :s-MoO3), poly[9,9-dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine] (TFB), poly(N-vinylcarbazole)( PVK), N,N,N',N'-tetrakis(4-methoxyphenyl)-benzidine (TPD), 4-bis[N-(1-naphthyl)-N-phenyl-amino] Biphenyl ( ⁇ -NPD), 4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA), 4,4',4''-tris( N-car
  • the material of the hole transport layer can be selected from 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), N,N'-diphenyl-N,N'-bis(1-naphthalene base)-1,1'-biphenyl-4,4''-diamine ( ⁇ -NPD), poly N,N'-diphenyl-N,N'-bis(3-methylphenyl)- (1,1'-biphenyl)-4,4'-diamine (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)- Spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4' ,4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',
  • the cathode material may be selected from Ca, Ba, Ca:Al, LiF:Ca, LiF:Al, BaF 2 :Al, CsF:Al, CaCO 3 :Al, BaF 2 :Ca:Al, Al, Mg, Au:Mg , one or more of Ag:Mg.
  • the material of the cathode can be selected from Al and/or Ag.
  • the present embodiment provides a quantum dot light emitting diode
  • the device structure of the quantum dot light emitting diode is an upright structure, including: a substrate 110, an anode 120, a hole injection layer 130, a hole transport layer stacked in sequence layer 140 , quantum dot light emitting layer 150 , composite electron transport layer 160 , metal layer 170 and cathode 180 .
  • the material of the composite electron transport layer 160 includes an electron transport material 161 and a metal salt 162 , and the metal salt 162 is infiltrated into the electron transport material 161 (shown in the form of a curve in FIG. 1 ).
  • the present embodiment also provides the preparation method of the above-mentioned quantum dot light-emitting diode, including:
  • S111 providing a substrate 110, and preparing an anode 120 having an ITO/Ag/ITO structure on the substrate 110;
  • S112 Spin-coat PEDOT:PSS:s-MoO 3 on the anode 120 to prepare a hole injection layer 130 with a thickness of 20 nm, and anneal the hole injection layer 130 in air at 180° C. for 15 minutes;
  • this embodiment provides an optical transmittance testing device and a preparation method thereof.
  • the preparation method of the optical transmittance test device includes:
  • the embodiment of the present application provides a quantum dot light-emitting diode and a preparation method thereof.
  • the quantum dot light-emitting diode is only made of the material FeCl 3 was replaced by CoCl2 .
  • this embodiment provides an optical transmittance testing device and a preparation method thereof.
  • the metal salt film in the optical transmittance testing device provided in Example 1 is used for the optical transmittance testing device.
  • the layer material FeCl 3 is replaced by CoCl 2 .
  • the embodiment of the present application provides a quantum dot light emitting diode and a preparation method thereof.
  • the quantum dot light emitting diode is based on embodiment 1, only the material of the metal layer in the quantum dot light emitting diode provided in embodiment 1 is replaced with Pd.
  • this embodiment provides an optical transmittance testing device and a preparation method thereof.
  • the optical transmittance testing device only uses the material of the metal layer in the optical transmittance testing device provided in Example 1 Ni is replaced by Pd.
  • the embodiment of the present application provides a quantum dot light-emitting diode and a preparation method thereof.
  • the quantum dot light-emitting diode is replaced by FeCl3 , which is the material of the film layer of the metal salt in the quantum dot light-emitting diode provided in embodiment 1. is CoCl 2 , and the material Ni of the metal layer is replaced with Pd.
  • this embodiment provides an optical transmittance testing device and a preparation method thereof.
  • the optical transmittance testing device is based on Example 1, and the film layer of the metal salt in the optical transmittance testing device provided in Example 1 is The material FeCl 3 is replaced by CoCl 2 , and the material Ni of the metal layer is replaced by Pd.
  • the embodiment of the present application provides a quantum dot light emitting diode and a preparation method thereof.
  • the quantum dot light emitting diode is based on embodiment 1, only the material of the metal layer in the quantum dot light emitting diode provided in embodiment 1 is replaced with Pt.
  • this embodiment provides an optical transmittance testing device and a preparation method thereof.
  • the optical transmittance testing device only uses the material of the metal layer in the optical transmittance testing device provided in Example 1 Ni is replaced by Pt.
  • the embodiment of the present application provides a quantum dot light-emitting diode and a preparation method thereof.
  • the quantum dot light-emitting diode is replaced by FeCl3 , which is the material of the film layer of the metal salt in the quantum dot light-emitting diode provided in embodiment 1. is CoCl 2 , and the material of the metal layer is replaced by Pt from Ni.
  • this embodiment provides an optical transmittance testing device and a preparation method thereof.
  • the optical transmittance testing device is based on Example 1, and the film layer of the metal salt in the optical transmittance testing device provided in Example 1 is The material FeCl 3 is replaced by CoCl 2 , and the material Ni of the metal layer is replaced by Pt.
  • the present embodiment provides a quantum dot light-emitting diode.
  • the device structure of the quantum dot light-emitting diode includes a substrate 110, an anode 120, a hole injection layer 130, a hole transport layer 140, and a quantum dot light-emitting layer that are sequentially stacked.
  • layer 150 composite electron transport layer 160 , metal layer 170 and cathode 180 .
  • this embodiment also provides a method for preparing the above-mentioned quantum dot light-emitting diode, including:
  • S121 providing a substrate 110, and preparing an IZO/Ag/IZO anode 120 on the substrate 110;
  • S122 Spin-coat m-MTDATA on the anode 120 to prepare a hole injection layer 130 with a thickness of 18 nm, and anneal the hole injection layer 130 in air at 185° C. for 17 minutes;
  • S125 Spin-coat a mixture of LZO and FeCl 3 on the quantum dot light-emitting layer 150 (the ratio of the amount of FeCl 3 metal salt to LZO species in the mixture is 0.04) to form a composite electron transport layer 160 with a thickness of 63 nm, and °C annealing for 15 minutes;
  • this embodiment provides a quantum dot light emitting diode.
  • the device structure of the quantum dot light emitting diode is an inverted structure, including: a substrate 110, a cathode 180, a metal layer 170, a composite electron transport layer 160, Quantum dot light emitting layer 150 , hole transport layer 140 , hole injection layer 130 and anode 120 .
  • the material of the composite electron transport layer 160 includes the electron transport material 161 and the metal salt 162 , and the electron transport material 161 penetrates into the metal salt 162 (shown in the form of a curve in FIG. 5 ).
  • this embodiment also provides a method for preparing the above-mentioned quantum dot light-emitting diode, including:
  • S138 Prepare an anode 120 having an ITZO/Ag/ITZO structure on the hole injection layer 130;
  • This comparative example provides a quantum dot light-emitting diode.
  • the device structure of the quantum dot light-emitting diode is an upright structure, including: a substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, An electron transport layer, and a cathode.
  • This comparative example also provides the preparation method of the above-mentioned quantum dot light-emitting diode, including:
  • S211 providing a substrate, and preparing an anode with an ITO/Ag/ITO structure on the substrate;
  • S215 Spin-coat LZO on the quantum dot light-emitting layer to prepare an electron transport layer with a thickness of 60 nm, and anneal at 80° C. for 15 minutes;
  • this comparative example provides an optical transmittance testing device and a preparation method thereof.
  • the preparation method of the optical transmittance test device includes:
  • LZO was spin-coated on ITO to prepare an electron transport layer with a thickness of 60 nm and annealed at 80 °C for 15 min.
  • This comparative example provides a quantum dot light-emitting diode.
  • the device structure of the quantum dot light-emitting diode is an upright structure, including: a substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, Composite electron transport layer, and cathode.
  • This comparative example also provides the preparation method of the above-mentioned quantum dot light-emitting diode, including:
  • S221 providing a substrate, and preparing an anode with an ITO/Ag/ITO structure on the substrate;
  • this comparative example provides an optical transmittance testing device and a preparation method thereof.
  • the preparation method of the optical transmittance test device includes:
  • This comparative example provides a quantum dot light-emitting diode and a preparation method thereof.
  • the quantum dot light-emitting diode only uses the material FeCl in the film layer of the metal salt in the quantum dot light-emitting diode provided in comparative example 2. Replaced by CoCl 2 .
  • this comparative example provides an optical transmittance testing device and a preparation method thereof.
  • the optical transmittance testing device only uses the film of the metal salt in the optical transmittance testing device provided in comparative example 2
  • the material FeCl 3 in the layer was replaced by CoCl 2 .
  • This comparative example provides a quantum dot light-emitting diode.
  • the device structure of the quantum dot light-emitting diode is an upright structure, including: a substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, An electron transport layer, and a cathode.
  • This comparative example also provides the preparation method of the above-mentioned quantum dot light-emitting diode, including:
  • S231 providing a substrate, and preparing an anode with an ITO/Ag/ITO structure on the substrate;
  • this comparative example provides an optical transmittance testing device and a preparation method thereof.
  • the preparation method of the optical transmittance test device includes:
  • This comparative example provides a quantum dot light-emitting diode and a preparation method thereof.
  • the quantum dot light-emitting diode is based on comparative example 4, only the material of the metal layer in the quantum dot light-emitting diode provided in comparative example 4 is replaced with Pd.
  • this comparative example provides an optical transmittance testing device and a preparation method thereof.
  • the optical transmittance testing device only uses the material of the metal layer in the optical transmittance testing device provided in comparative example 4 Ni is replaced by Pd.
  • This comparative example provides a quantum dot light-emitting diode and its preparation method.
  • the quantum dot light-emitting diode only replaces Ni with Pt as the material of the metal layer in the quantum dot light-emitting diode provided in comparative example 4.
  • this comparative example provides an optical transmittance testing device and a preparation method thereof.
  • the optical transmittance testing device only uses the material of the metal layer in the optical transmittance testing device provided in comparative example 4 Ni is replaced by Pt.
  • This comparative example provides a quantum dot light-emitting diode.
  • the device structure of the quantum dot light-emitting diode is an upright structure, including: a substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, Composite electron transport layer, metal layer and cathode.
  • the materials of the composite electron transport layer include electron transport materials and metal salts.
  • This comparative example also provides the preparation method of the above-mentioned quantum dot light-emitting diode, including:
  • S241 providing a substrate, and preparing an anode with an ITO/Ag/ITO structure on the substrate;
  • the optical transmittance test comprising the composite electron transport layer and the metal layer provided by embodiments 1 to 6
  • the average transmittance and maximum transmittance of the device increased.
  • the sheet resistance of the quantum dot light-emitting diodes in Example 2, Example 4, Example 6, Comparative Example 1, and Comparative Example 3 was tested, and the results showed that the sheet resistance of the quantum dot light-emitting diodes prepared in Comparative Example 1 was within 100 ⁇ Left and right, the sheet resistance of the quantum dot light-emitting diode that includes the composite electron transport layer in Comparative Example 3 is 200 ⁇ 250 ⁇ , while the sheet resistance of the quantum dot light-emitting diode that includes the composite electron transport layer and the metal layer in Examples 2, 4, and 6 is 50 ⁇ 60 ⁇ . Therefore, the quantum dot light-emitting diode including the composite electron transport layer and the metal layer has lower sheet resistance and is more conducive to the transport of carriers.
  • the quantum dot light emitting diodes provided in Examples 1 to 6 have increased external quantum efficiency and brightness.
  • the brightness of the quantum dot light-emitting diodes provided in Comparative Examples 2 and 3, which include a composite electron transport layer and no metal layer, is improved, but the external quantum efficiency does not change much.
  • the quantum dot light-emitting diodes that only include the composite electron transport layer but not the metal layer have a poor effect on the improvement of the external quantum efficiency of the device.
  • the external quantum efficiency of the quantum dot light-emitting diodes provided in Comparative Examples 4-6 that included a metal layer and did not have a composite electron transport layer that replaces the electron transport layer was significantly increased, but The decrease in brightness shows that the quantum dot light-emitting diode including only the metal layer but not the composite electron transport layer replacing the electron transport layer has a poor effect on improving the brightness of the device.
  • the quantum dot light-emitting diodes provided by Examples 1-6 of the present application have better performance in terms of external quantum efficiency and brightness.
  • the composite electron transport layer and the metal layer in the light-emitting diode provided by the application complement each other and cooperate with each other, so that the light-emitting diode of the present application has higher transmittance, carrier transport, brightness, and efficiency than the prior art. Excellent performance, good overall effect.

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  • Manufacturing & Machinery (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Computer Hardware Design (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)

Abstract

La présente demande se rapporte au domaine de la technologie optoélectronique et divulgue une diode électroluminescente et son procédé de préparation. La diode électroluminescente comprend : une couche composite de transport d'électrons, les matériaux de celle-ci comprenant un matériau de transport d'électrons et un sel métallique, et un élément métallique dans le sel métallique étant choisi parmi les éléments du groupe VIII ; et une couche métallique, un matériau de la couche métallique étant une substance élémentaire métallique dopée ou non dopée, et un élément métallique dans la substance élémentaire métallique étant choisi parmi les éléments du groupe VIII. La diode électroluminescente présente une luminosité et une efficacité supérieures.
PCT/CN2022/139562 2021-12-29 2022-12-16 Diode électroluminescente et son procédé de préparation WO2023125072A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107579158A (zh) * 2016-07-04 2018-01-12 三星显示有限公司 有机发光显示设备
US20190393438A1 (en) * 2016-05-13 2019-12-26 Siemens Aktiengesellschaft Organic Electron-Conducting Layer Having N-Dopant
CN111384257A (zh) * 2018-12-28 2020-07-07 广东聚华印刷显示技术有限公司 量子点电致发光器件及显示器
WO2020142480A1 (fr) * 2018-12-31 2020-07-09 Nanophotonica, Inc. Diodes électroluminescentes à points quantiques comprenant une couche de transport d'électrons zno dopé
CN112687817A (zh) * 2019-10-18 2021-04-20 三星电子株式会社 量子点发光器件和电子设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190393438A1 (en) * 2016-05-13 2019-12-26 Siemens Aktiengesellschaft Organic Electron-Conducting Layer Having N-Dopant
CN107579158A (zh) * 2016-07-04 2018-01-12 三星显示有限公司 有机发光显示设备
CN111384257A (zh) * 2018-12-28 2020-07-07 广东聚华印刷显示技术有限公司 量子点电致发光器件及显示器
WO2020142480A1 (fr) * 2018-12-31 2020-07-09 Nanophotonica, Inc. Diodes électroluminescentes à points quantiques comprenant une couche de transport d'électrons zno dopé
CN112687817A (zh) * 2019-10-18 2021-04-20 三星电子株式会社 量子点发光器件和电子设备

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