WO2023093542A1 - 太阳能光伏电池低压水平磷扩散生产线 - Google Patents

太阳能光伏电池低压水平磷扩散生产线 Download PDF

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WO2023093542A1
WO2023093542A1 PCT/CN2022/131271 CN2022131271W WO2023093542A1 WO 2023093542 A1 WO2023093542 A1 WO 2023093542A1 CN 2022131271 W CN2022131271 W CN 2022131271W WO 2023093542 A1 WO2023093542 A1 WO 2023093542A1
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boat
silicon wafer
equipment
unloading
loading
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PCT/CN2022/131271
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English (en)
French (fr)
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林佳继
庞爱锁
朱太荣
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拉普拉斯新能源科技股份有限公司
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Publication of WO2023093542A1 publication Critical patent/WO2023093542A1/zh
Priority to US18/438,079 priority Critical patent/US20240250203A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of solar cell manufacturing, for example, to a low-voltage horizontal phosphorus diffusion production line for solar photovoltaic cells.
  • the mainstream P-type monocrystalline cell technology is Passivated Emitter and Rear Cell (PERC) technology, which has a simple manufacturing process and low cost, and superimposed Selective Emitter (SE) technology Improve battery conversion efficiency.
  • PERC Passivated Emitter and Rear Cell
  • SE Selective Emitter
  • N-type battery technology will become the mainstream direction of future development.
  • P-type batteries have high conversion efficiency, high bifaciality, low temperature coefficient, and no light Fading, low light effect, longer carrier life, etc.
  • the technology used by N-type batteries is different from that used by P-type batteries, so the production equipment of N-type batteries is also different from that of P-type batteries. Therefore, PERC equipment cannot be adapted to N-type batteries, and PERC production line equipment will be idle, resulting in waste.
  • This application provides a low-voltage horizontal phosphorus diffusion production line for solar photovoltaic cells.
  • a low-voltage horizontal phosphorus diffusion production line for solar photovoltaic cells including texturing equipment, low-pressure horizontal heat treatment system, laser SE equipment, low-pressure horizontal oxidation system, alkali polishing and etching equipment, plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) equipment, screen printing equipment, and electrical injection equipment;
  • the texturing equipment is set to perform the texturing process of N-type single crystal silicon wafers
  • the low-pressure horizontal heat treatment system is set to perform the boron diffusion process and phosphorus diffusion process of N-type single crystal silicon wafers.
  • the laser SE equipment is set to perform laser local boron doping on the front side of N-type single crystal silicon wafer to form boron heavily doped region and laser local phosphorous doping on the back side of N-type single crystal silicon wafer to form phosphorus heavy doping
  • the low-voltage horizontal oxidation system is set to perform the oxidation process of N-type single crystal silicon wafers to protect the boron heavily doped area and phosphorus heavily doped area
  • the alkali polishing and etching equipment is set to perform the oxidation process of N-type single crystal silicon wafers Alkali polishing process and etching process
  • PECVD equipment is set to perform passivation layer process, positive film process and back film process of N-type single crystal silicon wafer
  • screen printing equipment is set to perform double-sided electrode of N-type single crystal silicon wafer
  • the preparation process is to form a battery sheet, and the electric injection device is configured to inject carriers into the battery sheet.
  • FIG. 1 is a schematic structural diagram of a battery provided in an embodiment of the present application.
  • Fig. 2 is a schematic diagram of a battery preparation process provided by the embodiment of the present application.
  • Fig. 3 is a schematic diagram of a kind of texturing equipment provided by the embodiment of the present application.
  • Fig. 4 is a schematic diagram of a low-pressure horizontal heat treatment system provided in the embodiment of the present application.
  • Fig. 5 is a schematic diagram of a loading and unloading system of a low-pressure horizontal heat treatment system provided in an embodiment of the present application;
  • Fig. 6 is a schematic diagram of a loading and unloading system of another low-pressure horizontal heat treatment system provided in the embodiment of the present application;
  • Fig. 7 is a schematic diagram of the loading and unloading system of another low-pressure horizontal heat treatment system provided in the embodiment of the present application;
  • Fig. 8 is a schematic diagram of a boat in a low-pressure horizontal heat treatment system provided by an embodiment of the present application.
  • Fig. 9 is an enlarged schematic view of A in Fig. 8.
  • Fig. 10 is a schematic diagram of a boat-moving purification system and a furnace tube system of a low-pressure horizontal heat treatment system provided in an embodiment of the present application;
  • Fig. 11 is an internal schematic diagram of a boat-moving purification system of a low-pressure horizontal heat treatment system provided by an embodiment of the present application;
  • Fig. 12 is a schematic diagram of a boat moving system in a boat moving purification system provided by an embodiment of the present application.
  • Fig. 13 is a schematic diagram of a boat pushing system in a boat cleaning system provided by an embodiment of the present application.
  • Fig. 14 is a schematic diagram of a transmission system in a boat-moving purification system provided by an embodiment of the present application.
  • Fig. 15 is an internal schematic diagram of a furnace tube system of a low-pressure horizontal heat treatment system provided in an embodiment of the present application;
  • Fig. 16 is a schematic diagram of a laser SE device provided in the embodiment of the present application.
  • Figure 17 is a schematic diagram of a low-pressure horizontal oxidation system provided by the embodiment of the present application.
  • Figure 18 is a schematic diagram of an alkali polishing and etching device provided in the embodiment of the present application.
  • Figure 19 is a schematic diagram of a phosphorus diffusion device provided in the embodiment of the present application.
  • Figure 20 is a schematic diagram of a PECVD device provided in the embodiment of the present application.
  • FIG. 21 is a schematic diagram of a screen printing device provided in an embodiment of the present application.
  • All directional indications (such as up, down, left, right, front, back, horizontal, vertical, etc.) in the embodiments of the present application are only used to explain the relative positional relationship and movement of multiple components in a specific posture etc., if the specific posture changes, the directional indication also changes accordingly.
  • a low-voltage horizontal phosphorus diffusion production line for solar photovoltaic cells includes N-type monocrystalline silicon wafer 1, texturing equipment 2, low-pressure horizontal heat treatment system 3, laser SE equipment 4, low-pressure horizontal oxidation system 5, Alkali polishing and etching equipment 6, PECVD equipment 8, screen printing equipment 9 and electric injection equipment, the texturing equipment 2 is set to perform the texturing process of N-type single crystal silicon wafer 1, and the low-pressure horizontal heat treatment system 3 is set to perform N-type The boron diffusion process, phosphorus diffusion process, and annealing process of the N-type single crystal silicon wafer 1, the laser SE equipment 4 is set to perform laser local boron doping on the front side of the N-type single crystal silicon wafer 1 to form the boron heavily doped region 113 and the N-type Laser local phosphorous doping on the back of single crystal silicon wafer 1 to form phosphorus heavily doped region 123, low pressure horizontal oxidation system 5 is set to perform the oxidation process of N type single
  • the texturing equipment 2 includes a texturing feeding device 20, a texturing pre-cleaning device 21, a texturing device 22, a texturing post-cleaning device 23, a texturing pickling device 24, and a texturing pre-dehydration device 25 , texturing drying device 26 and texturing unloading device 27, texturing feeding device 20, texturing pre-cleaning device 21, texturing device 22, post-texturing cleaning device 23, texturing pickling device 24, texturing
  • the pre-dehydration device 25, the texturing drying device 26 and the texturing unloading device 27 are sequentially connected, and the N-type monocrystalline silicon wafer 1 is moved to the texturing pre-cleaning device 21 by the texturing feeding device 20 for cleaning, and the texturing pre-cleaning
  • the device 21 is set to remove impurities and damaged layers on the surface of the N-type single crystal silicon wafer 1, and prepares for subsequent texturing.
  • the texturing device 22 uses an alkaline solution to form a textured surface on the surface of the N-type single crystal silicon wafer 1.
  • the alkaline solution can be Use sodium hydroxide or potassium hydroxide.
  • the suede surface forms multiple triangles to increase the number of refractions of sunlight on the surface of the N-type single-crystal silicon wafer 1, increase the optical path of light in the N-type single-crystal silicon wafer 1, and improve the utilization rate of sunlight.
  • the N-type monocrystalline silicon wafer 1 after texturing is cleaned by the cleaning device 23 after texturing and the pickling device 24 after texturing, and the cleaning agent is RCA1 (hydrogen peroxide, ammonia water, deionized water (Vol.
  • the low-pressure horizontal heat treatment system 3 includes a loading and unloading system 31, a boat cleaning system 32, and a furnace tube system 33.
  • the system 31 is docked, and the loading and unloading system 31 includes a loading guide assembly 311, an unloading guide assembly 312, a guide transfer mechanism 313, a wafer grabbing device 314, a loading and conveying mechanism 315, an unloading and conveying mechanism 316 and a boat
  • the circulation mechanism 317, the boat-moving purification system 32 includes a boat-moving system 321, a boat-pushing system 322, a purification cooling system 323, a transmission system 324 and a clean bench frame 325
  • the furnace tube system 33 includes a furnace tube frame 331 and a process furnace tube 332,
  • the transfer system 324 is respectively docked with the boat transfer mechanism 317 and the boat moving system 321, and is set to execute the boat transfer between the loading and unloading system 31 and the boat cleaning system 32, and the push boat system 322 is docked with the process
  • the loading and unloading system 31 includes a loading guide assembly 311, an unloading guide assembly 312, a guide transfer mechanism 313, a wafer grabbing device 314, a loading and conveying mechanism 315, an unloading and conveying mechanism 316, and a boat transfer mechanism 317.
  • Loading guide vane assembly 311, unloading guide vane assembly 312, guide vane circulation conveying mechanism 313, loading and conveying mechanism 315, unloading and conveying mechanism 316 and boat circulation mechanism 317 constitute the guide vane device of loading and unloading system 31, and the silicon
  • the chip grabbing device 314 includes a six-axis robot and a silicon wafer grabbing and separating mechanism. The silicon wafer grabbing and splitting mechanism controls the suction and turning of the silicon wafer.
  • the movement of the feeding guide assembly 311, the wafer grabbing device 314, the feeding and handling mechanism 315 and the boat transfer mechanism 317 form a wafer feeding system
  • the feeding guide assembly 312, the wafer grabbing device 314, the unloading and conveying mechanism 316 and the boat circulation mechanism 317 constitute a silicon wafer unloading system.
  • the feeding guide assembly 311 includes a feeding and incoming material docking conveying mechanism 3111, a feeding buffer conveying mechanism 3112, a loading flower basket lifting mechanism 3113, a feeding flower basket conveying mechanism 3114, a feeding silicon wafer conveying mechanism 3115, a feeding silicon wafer
  • the sheet buffer mechanism 3116 and the feeding splicing mechanism 3117, the feeding flower basket conveying mechanism 3114 is located at the lower side of the loading flower basket lifting mechanism 3113
  • the described blanking guide piece assembly 312 includes a blanking and incoming material docking conveying mechanism 3121, a blanking buffer conveying mechanism Mechanism 3122, blanking flower basket lifting mechanism 3123, blanking flower basket conveying mechanism 3124, blanking silicon wafer conveying mechanism 3125, blanking silicon wafer cache mechanism 3126, and blanking splicing mechanism 3127, the blanking flower basket conveying mechanism 3124 is located in the blanking flower basket On the lower side of the lifting mechanism 3123, the guide piece circulation conveying mechanism 313 is respectively connected with the loading flower basket conveying mechanism
  • the feeding and incoming material docking conveying mechanism 3111 adopts an automatic guided vehicle (Automated Guided Vehicle, AGV) conveying line, and its length can accommodate multiple groups of flower baskets for simultaneous conveying.
  • Mechanism 3111 is fixed with incoming material blocking cylinders at both ends of the conveying direction, and two sets of symmetrical incoming material shooting sensors are fixed on both sides of the end face of the feeding and incoming material docking conveying mechanism 3111 near the loading buffer conveying mechanism 3112.
  • a group of incoming material shooting sensors and an incoming material blocking cylinder work together to realize the purpose of individually transporting the flower baskets to the loading buffer conveying mechanism 3112 in sequence.
  • the feeding and incoming material docking conveying mechanism 3111 is also provided with multiple sensors (not shown in the figure), The number of sensors is the same as the number of flower baskets that can be carried at one time by the feeding and receiving docking conveyor mechanism 3111, and the distance between adjacent sensors is adjustable. The sensors can detect the state of the flower basket full of materials and realize the fine control of the number of silicon wafers.
  • the loading flower basket lifting mechanism 3113 includes a lifting and conveying component and a flower basket lifting component.
  • the flower basket lifting component controls the lifting and conveying component to rise and fall.
  • the length of the lifting and conveying component matches the length of a single flower basket.
  • the flower basket located on the lifting and conveying component is fixed by a clamping device to prevent the deviation caused by the feeding silicon wafer conveying mechanism 3115 when taking the piece, which affects the efficiency of taking the piece.
  • the flower basket lifting component uses a ball The screw drive mode controls the lifting and lowering of the conveying components.
  • the loading flower basket lifting mechanism 3113 also includes a through-beam sensor configured to detect the remaining amount of silicon wafers in the flower basket and an orientation sensor configured to detect the orientation of the incoming flower basket. The orientation sensor prevents An error occurs when the flower basket is transported.
  • the feeding silicon wafer conveying mechanism 3115 takes the silicon wafers located in the upper flower basket of the feeding flower basket lifting mechanism 3113, and realizes the function of sequentially taking the silicon wafers through the feeding flower basket lifting mechanism 3113.
  • the feeding silicon wafer conveying mechanism 3115 extends the loading silicon wafer cache mechanism 3116 and the feeding splicing mechanism 3117 in sequence, and transports them to the loading silicon wafer conveying mechanism 3115, and the silicon wafers flow into the feeding splicing mechanism 3117 through the feeding silicon wafer conveying mechanism 3115, and the silicon wafers are loaded.
  • the chip conveying mechanism 3115 adjusts the silicon chips to keep the silicon chips in order during the transmission process, which facilitates the inflow of the silicon chips and improves the inflow efficiency of the silicon chips.
  • the feeding splicing mechanism 3117 is provided with a feeding splicing groove, and the feeding splicing mechanism 3117 sequentially guides the silicon wafers transported by the feeding silicon wafer conveying mechanism 3115 into the feeding splicing groove.
  • the loading silicon wafer cache mechanism 3116 is located between the loading silicon wafer conveying mechanism 3115 and the feeding splicing mechanism 3117.
  • the loading silicon wafer cache mechanism 3116 is fixedly provided with a plurality of buffer slots, and the length direction of the buffer slots is in line with the upper Silicon wafer conveying mechanism 3115 has the same conveying direction for silicon wafers, and the adjacent buffer tanks are arranged vertically and parallelly.
  • the silicon wafer buffer mechanism 3116 is used as a mechanism for temporarily storing silicon wafers, so as to avoid the feeding connection in the feeding connecting mechanism 3117. The situation that the wafer tank is full of silicon wafers but not taken out achieves the purpose of sequentially introducing the silicon wafers transported by the feeding silicon wafer conveying mechanism 3115 into the buffer tank.
  • the guide vane circulation conveying mechanism 313 includes a circulation conveying assembly 3131 and a circulation moving assembly 3132, and the circulation moving assembly 3132 includes a traverse power assembly, and the traverse power assembly drives the circulation conveying assembly 3131 relative to The circulation moving assembly 3132 moves, and the circulation conveying assembly 3131 connects with the feeding flower basket conveying mechanism 3114 and the unloading flower basket conveying mechanism 3124 respectively during the moving process, and the upper end surface of the circulating conveying assembly 3131 is connected with the loading flower basket conveying mechanism 3114 and the unloading flower basket conveying mechanism 3114
  • the upper end surface of the flower basket conveying mechanism 3124 is in the same horizontal plane to ensure the smooth transition of the flower basket.
  • the six-axis robot 3141 controls the space movement of the silicon wafer grasping and separating mechanism 3142, which makes the silicon wafer movement and pick-and-place operation more flexible, and is conducive to improving the speed of silicon wafer pick-and-place and the overall degree of automation.
  • the silicon wafer grasping and separating mechanism 3142 includes a silicon wafer grasping and splitting mechanism, a silicon wafer grasping suction cup mechanism and a silicon wafer grasping and rotating mechanism, and the silicon wafer grasping suction cup mechanism includes a suction cup suction device and a control suction cup suction device An adjustment device for dislocation movement.
  • the silicon wafer grabbing and rotating mechanism includes a suction cup suction device and a rotating device that controls the rotation of the suction cup suction device.
  • the six-axis robot 3141 controls the movement of the silicon wafer grabbing and separating mechanism 3142.
  • the silicon wafer The gripping and splitting mechanism controls the movement of silicon wafers through the silicon wafer grabbing suction cup mechanism and the silicon wafer grabbing and rotating mechanism. Flip over.
  • the loading and conveying mechanism 315 includes a loading and conveying positioning and moving assembly 3151, a loading and conveying silicon wafer jacking assembly 3152, a loading and conveying silicon wafer regularization assembly 3153, and a loading and conveying ion blowing assembly.
  • the unloading and conveying mechanism 316 includes The unloading and conveying positioning moving assembly 3160, the unloading and conveying silicon wafer jacking assembly 3161, the unloading and conveying silicon wafer regularization assembly 3162, and the unloading and conveying ion blowing assembly, in this embodiment, the feeding and conveying mechanism 315 and the unloading and conveying mechanism 316 The structure is the same.
  • the boat circulation mechanism 317 includes a transport docking assembly 3171, a jaw assembly 3172, and a mobile module assembly 3173 that controls the movement of the jaw assembly 3172.
  • the transmission docking assembly 3171 carries a plurality of boats, and the mobile module assembly 3173 controls the jaw assembly.
  • the 3172 clamping boat circulates between the transmission docking conveying assembly 3171 and the feeding and transporting mechanism 315 .
  • the present embodiment adopts a special boat to support the silicon wafer, and the boat supports the silicon wafer to enter the process furnace tube for process.
  • the boat 319 includes a boat top plate 3191, a boat bottom plate 3192, a boat support rod 3193 and The boat limiting plate 3194; the boat top plate 3191 and the boat bottom plate 3192 are connected by the boat support rod 3193 to form a space for placing silicon wafers.
  • the overall structure of the boat is simple, and the weight is light, which improves the load range as much as possible.
  • the boat support bar 3193 is provided with boat splints 31931 at intervals along the length direction, and two groups of boat splints 31931 adjacent to each other form a boat splint cavity 31932 , and a boat limiting plate 3194 is installed in the splint cavity 3193 .
  • Boat support bar 3193 is provided with multiple groups, and it is distributed between boat top plate 3191 and boat bottom plate 3192, and boat support bar 3193 quantity, boat top plate 3191 shape, boat bottom plate 3192 shape all adapt to silicon chip.
  • silicon chip is rectangular, and whole boat just forms cuboid, and four boat support rods 3193 are distributed on the four corners of boat top plate 3191 and boat bottom plate 3192.
  • the boat splint 31931 is fixed on the opposite surface of the boat support bar 3193 on the left and right sides, and the splint cavities 3193 corresponding to each other on each boat support bar 3193 are on the same level, and the boat limiting plate 3194 is installed on multiple sets of splint cavities on the same level within 3193.
  • the boat limiting plate 3194 includes two groups of boat limiting side plates installed in the boat splint chamber 3193 and the boat limiting connecting plate connecting the two groups of boat limiting side plates.
  • the boat limiting side plate and the boat limiting connecting plate have the same structure.
  • the boat The limiting side plate and the boat limiting connecting plate are integrally formed.
  • the cross-sectional shape of the splint chamber 3193 in the vertical direction is set as a rectangle.
  • the cavity 3193 can ensure the stability of the installation of the boat limiting side plate, and the boat limiting side plate and the boat limiting connecting plate are fixed with a silicon chip placement cavity 31941, and the corresponding silicon chip setting cavity 31941 on the boat limiting side plate and the boat limiting connecting plate
  • the cross-sectional shape of the silicon wafer placement chamber 31941 in the vertical direction is not limited.
  • the silicon wafer placement chamber 31941 in this embodiment adopts a square shape, and the silicon wafer is supported by contacting the silicon wafer placement chamber 31941 through line contact or surface contact.
  • Silicon wafer placement cavity 31941 can accommodate two groups of silicon wafers stacked and installed.
  • the three sides of the silicon wafer are blocked by the boat limiting plate 3194, which can effectively prevent the gas from entering the back-to-back bonding surface from the back-to-back silicon wafer gap, thereby Effectively avoid wrapping plating, realize non-wrapping or micro-wrapping plating, and remove the treatment of wrapping coating, so as to realize continuous process in the same equipment system, without unloading and off-line wet treatment.
  • the boat top plate 3191 and the boat bottom plate 3192 are arranged in parallel, and the space for placing the boat plate is provided as far as possible. Because when the boat top plate 3191 and the boat bottom plate 3192 are non-parallel, part of the space cannot be used to place silicon wafers horizontally, thereby wasting unnecessary space and increasing the weight of the boat.
  • the boat is made of non-conductive, high temperature resistant and pressure resistant materials.
  • the material is chosen to be quartz or silicon carbide, so as to reduce its own weight as much as possible, increase the number of placements of the entire boat to the boat board, and also meet the characteristics of the boat's non-conductivity and high temperature resistance.
  • a boat connecting shaft 3195 is fixed between the boat supporting rods 3193, and the boat connecting shaft 3195 is fixedly provided with a boat supporting plate 31951. Stability when taking and releasing the boat, it is not easy for the boat to shift during transportation; the shape of the boat supporting plate 31951 can be set according to actual needs, generally rectangular, and other shapes can also be used, as long as it is convenient for the manipulator to take and place the avoidance and The support of the boat support is sufficient.
  • the flower baskets filled with silicon wafers are sequentially transported to the loading buffer conveying mechanism 3112 by the feeding and receiving docking conveying mechanism 3111, and the loading buffer conveying mechanism 3112 conveys the flower baskets to the loading flower basket for lifting
  • the mechanism 3113 outputs the silicon wafers in the flower basket sequentially through the feeding silicon wafer conveying mechanism 3115, and through the cooperative operation of the feeding silicon wafer conveying mechanism 3115 and the feeding splicing mechanism 3117, the silicon wafers on the conveying line flow into the upper
  • the boat-moving purification system 32 includes a boat-moving system 321, a boat-pushing system 322, a purification cooling system 323, a transmission system 324 and a clean bench frame 325, and the boat-moving system 321, the boat-pushing system 322 and the transmission system 324 are installed inside the clean bench frame 325 , the purification cooling system 323 is located outside the clean bench frame 325, and the transfer system 324 transfers the boat loaded with unprocessed silicon wafers located in the loading and unloading system 31 to the boat handling system 321, and transfers the boat loaded with processed silicon wafers to the loading and unloading system 31 , the transport system 324 is set to carry out the interaction between the boat moving system 321 and the loading and unloading system 31, the boat moving system 321 moves the boat with unprocessed silicon wafers to the boat pushing system 322, and the boat pushing system 322 will hold unprocessed silicon wafers The boat moves to the furnace tube system 33 for process, the boat pushing system 322 moves the boat loaded with process
  • the boat-moving system 321 includes a boat-moving column 3211, a boat-moving head 3212, and a Z-axis transmission structure 3214; wherein the boat-moving head 3212 is set on the boat-moving column 3211 through the Z-axis transmission structure; the boat-moving head 3212 includes an arm, a second Level arm, X-axis transmission structure 1, X-axis transmission structure 2, and boat-moving robot claw 3213; the primary arm and the secondary arm are movably connected through X-axis transmission structure 1, and the boat-moving robot claw 3213 is movably set through X-axis transmission structure 2 On the secondary arm; the X-axis transmission structure 1 includes the X-axis servo motor 1, and the X-axis servo motor 1 is arranged on the outside of the primary arm; the boat-moving mechanical claw 3213 is set to support and support the boat holder.
  • the boat moving column 3211 is also fixedly provided with a buffer boat moving manipulator 3215, and the buffer boat moving manipulator 3215 is correspondingly arranged on two boat moving columns 3211, and the buffer boat moving manipulator 3215 is set as a buffer boat holder; in this example, a boat moving The uprights 3211 are provided with six caching boat-moving manipulators 3215. In contrast, the maximum number of boat supports that can be buffered simultaneously on the two boat-moving uprights 3211 is six.
  • the photoelectric limit sensor 3216 is arranged on the column 3211 for moving the boat.
  • the boat-moving system 321 controls the movement of the boat-moving head 3212 in the Z-axis direction by setting the Z-axis transmission structure 3214 on the boat-moving column 3211; by setting the boat-moving head 3212 including the X-axis transmission structure 1 and the X-axis transmission structure 2, the control The movement of the secondary arm and the boat-moving robot claw 3213 in the X-axis direction.
  • the transfer system 324 transfers the boat carrier from the loading and unloading system 31, and the boat moving robot claw 3213 moves the boat carrier from the transferring system 324 to the boat pushing system 322.
  • the buffer boat moving robot arm 3215 Cache the boat support.
  • the boat pusher system 322 includes a boat pusher transmission mechanism 3221, a boat pusher paddle 3222 and a boat pusher furnace door 3223, the boat pusher paddle 3222 is connected with the boat pusher furnace door 3223, and the two move synchronously, and the boat pusher paddle 3222 is set to support and carry the boat holder And the boat 319, the boat 319 is loaded with silicon wafers, the push boat conveying mechanism 3221 controls the boat support and the boat 319 to input or output the process furnace tube by driving the push boat paddle 3222 to move back and forth.
  • the push boat transmission mechanism 3221 is fixedly connected with the push boat furnace door 3223, and the sliding direction of the push boat transmission mechanism 3221 is consistent with the axial direction of the process furnace tube.
  • the purification cooling system 323 comprises a purification device and a cooling device, and the purification device comprises a first air filter purifier, a second air filter purifier, a purification fan, a first air inlet and a second air inlet, the first air filter purifier, the second air filter
  • the air filter purifier, the purification fan, the first air inlet and the second air inlet are arranged horizontally above the clean bench frame 325 in turn and are connected through pipelines.
  • the first air filter purifier and the second air filter The purifier uses an air filter to purify, which is a physical purification method.
  • first air filter purifier and the second air filter purifier are at least one group, in this embodiment set as two groups of the first air filter purifier and the second air filter purifier, the first air filter purifier and the second air filter purifier
  • the two air filter purifiers communicate with the inner space of the clean bench frame 325 respectively through the air pipeline structure.
  • the first air filter purifier and the second air filter purifier use the purification fan to purify the air outside the clean bench frame 325 and then pass it into the clean bench frame 325. Because the silicon wafer process needs to be clean, they are connected to the boat removal purification system.
  • the gas in the 32 frame needs to be filtered and purified first.
  • the purpose of setting the first air filter purifier and the second air filter purifier into two groups is to ensure that the air flow inside the clean bench frame 325 is uniform, and to avoid the situation where the air flow on one side is large and the air flow on the other side is small Occurs to ensure uniform heat dissipation of the silicon wafer.
  • the first air filter purifier and the second air filter purifier By arranging the first air filter purifier and the second air filter purifier to pass through the purified cold air, the temperature inside the clean bench frame 325 can be cooled to a great extent without introducing pollution.
  • the purification fan and the first air inlet and the second air inlet are to ensure the air circulation inside the clean table frame 325.
  • the purification fan is connected with the first air inlet and the second air inlet respectively, and the first air inlet and the second air inlet are respectively connected to each other.
  • An airflow outlet is provided, wherein the outlet is arranged on the side of the first air inlet and the second air inlet, the purpose is to prevent dust from flowing along the first air inlet and the second air inlet when the first air inlet and the second air inlet are not working.
  • the two air inlets fall into the inside of the clean bench frame 325 .
  • the air outside the clean bench frame 325 can be sucked into the clean bench frame 325 along the first air inlet and the second air inlet.
  • the first air inlet and the second air inlet are combined with the first air filter purifier and the second air filter purifier to realize air circulation inside and outside the clean bench frame 325 .
  • the cooling device includes a first air inlet, a second air inlet, an air outlet and a purification fan, and the air outlet is located inside the boat cleaning system 32 .
  • the air cooling device can also be combined with a water cooling device.
  • the water cooling device includes The water-cooling plate and the water-cooling pipeline, the water-cooling plate and the water-cooling pipeline form a closed circulation loop, the water-cooling plate is provided with a water-cooling plate fan on one side, and the water-cooling plate fan is set on the water-cooling plate to realize rapid cooling of the water-cooling plate.
  • the hot air inside the boat purification system 32 can be drawn up and cooled by the water cooling plate, and then discharged to the outside of the boat purification system 32 or inside the boat purification system 32 to realize internal circulation.
  • the hot air flow inside the boat-moving purification system 32 passes through the water cooling plate, the hot air flow exchanges heat with the cooling fins provided on the water cooling coil, so that the temperature of the hot air flow drops, and the cooled hot air flow can be directly discharged to the outside Or lead to the inside, the cooling fins are made of aluminum or copper.
  • the water cooling plate is also provided with inlet and outlet pipes.
  • the water inlet and outlet pipes are vertically arranged on the top of the clean bench frame 325, and the water inlet and outlet pipes communicate with the water cooling plate through valves and pipes.
  • the water-cooling pipeline can be arranged on the top, side, and inside of the clean bench frame 325 or a combination thereof. , realizing rapid cooling inside the clean bench frame 325. In order to improve the water cooling efficiency, it is also possible to replace the water medium with a specific cooling liquid.
  • the transmission system 324 includes a transmission drive assembly 3240, a transmission mechanism 3241, a transmission frame 3242, a transmission second belt 3247 and a transmission tensioning assembly.
  • the transmission mechanism 3241 is located on the transmission frame 3242, and the transmission mechanism 3241
  • the transmission drive assembly 3240 transmits the boat support assembly through the transmission second belt 3247
  • the transmission tension assembly controls the tension of the transmission second belt 3247 .
  • the transmission drive assembly 3240 of the transmission mechanism 3241 controls the transmission of the second belt 3247 to drive, and the transmission of the second belt 3247 drives the boat support on the boat support plate assembly to move, so that the completed boat support is transmitted.
  • the unprocessed boat support is transferred from the loading and unloading system 31 to the boat moving system 321, so as to ensure that the transmission mechanism 3241 realizes stable and reliable transmission of the boat support.
  • the furnace tube system 33 includes a furnace tube frame 331 and a process furnace tube 332.
  • the process furnace tube 332 is horizontally installed on the furnace tube frame 331, and the opening of the process furnace tube 332 faces the boat pushing system 322, and the boat pushing system 322 will
  • the boat 319 is moved to the process furnace tube 332 by the boat pusher transfer mechanism 3221 and the boat paddle 3222 for processing, or the crafted boat 319 is output to the process furnace tube 332, and the boat 319 is pushed into the process furnace tube 332 by the boat pusher 3222 to the greatest extent
  • the boat furnace door 3223 can seal and close the furnace mouth of the process furnace tube 332, so that a cavity isolated from the outside is formed in the process furnace tube 332, and the tail of the process furnace tube 332 is provided with a
  • the internal gas delivery device 333; the gas delivery device 333 adjusts the internal pressure of the process furnace tube 332.
  • the furnace needs to be evacuated to form a vacuum furnace state, and then according to the actual situation According
  • the furnace tube system 33 includes process furnace tubes 332.
  • Each process furnace tube 332 corresponds to the boat moving system 321.
  • the process furnace tubes 332 are arranged side by side up and down. The combination of rows and columns can increase the output; each process furnace tube 332 and boat moving system 321 can work independently to achieve continuous production.
  • the process furnace tube 332 includes low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD) Process furnace tubes, boron diffusion process furnace tubes and annealing process furnace tubes are set as boron diffusion, phosphorus diffusion and annealing processes for N-type single crystal silicon wafers 1, saving process equipment and labor, and reducing silicon wafer transfer damage; furnace tube system 33
  • LPCVD low pressure chemical vapor deposition
  • Process furnace tubes, boron diffusion process furnace tubes and annealing process furnace tubes are set as boron diffusion, phosphorus diffusion and annealing processes for N-type single crystal silicon wafers 1, saving process equipment and labor, and reducing silicon wafer transfer damage; furnace tube system 33
  • the furnace tube system 33 Through the arrangement of multiple sets of pipelines designed side by side, the simultaneous and orderly progress of the loading and unloading system 31 and the silicon wafer process can be realized.
  • the material of the previous furnace can be unloaded and the material of the next furnace can be loaded.
  • the gas delivery device 333 includes a reaction gas delivery device and a tail gas treatment device, the reaction gas delivery device feeds process gas into the process furnace tube 332, and the tail gas treatment device is set as an auxiliary exhaust gas or a balance air pressure.
  • the furnace tube system 33 is also provided with a furnace cavity air cooling device 335 and a furnace tube frame cooling device 334, the furnace cavity air cooling device 335 includes a furnace tube frame air cooling plate 3351, and the furnace tube frame air cooling plate 3351 is arranged on the furnace tube
  • the top of the frame 331 and the top of the furnace tube frame 331 are also provided with multiple groups of air-cooled exhaust outlets 3352, and each group of air-cooled exhaust outlets 3352 is correspondingly provided with an exhaust fan, which is driven by a purification fan, and each group of process furnace tubes
  • the furnace tube frame 331 where 332 is located is provided with an upward ventilation pipe, and the ventilation pipe is connected to the furnace tube frame air cooling plate 3351 from the side of each group of process furnace tubes 332, and the furnace cavity air cooling device 335 will connect the furnace tube frame 331
  • the cooling device 334 of the furnace tube frame reduces the heat of the exhaust air, which greatly reduces the influence of the high temperature of the process furnace tube on the heat radiation of the furnace tube environment during the operation of the
  • the pipeline structure is connected with the inside of the process furnace tube to solve the heat generation of the process furnace tube.
  • the N-type monocrystalline silicon wafer 1 After the front side of the N-type monocrystalline silicon wafer 1 is textured, it is transported to the low-pressure horizontal heat treatment system 3 by the textured unloading device 27 to perform the boron diffusion process, and the textured surface of the N-type monocrystalline silicon wafer 1 is formed by the boron diffusion process. Boron doped region 112 .
  • the N-type single crystal silicon wafer 1 after boron diffusion is transported to the laser SE equipment 4.
  • the laser SE equipment 4 includes a laser SE feeding end 41, a laser processing cavity 43, and a laser feeding end 42.
  • the low-pressure level The loading and unloading system 31 of the heat treatment system 3 is docked with the laser SE feeding end 41 of the laser SE equipment 4.
  • Laser processing equipment is arranged in the laser processing chamber 43.
  • the grooved area of the N-type single crystal silicon wafer 1 is locally doped with a front laser to form a heavily boron-doped region 113.
  • the laser process equipment includes a boron source to provide a boron source for the heavily boron-doped region 113.
  • the low-pressure horizontal oxidation system 5 includes an oxidation loading and unloading device 51, an oxidation purification platform 52, an oxidation furnace body 53, and an oxidation gas cabinet 54, and the N-type monocrystalline silicon wafer 1 doped by the laser SE equipment 4 is transported to the Low-pressure horizontal oxidation system 5 .
  • the low-pressure horizontal oxidation system 5 processes the N-type single crystal silicon wafer 1 and protects the boron heavily doped region 113 .
  • the oxidation loading and unloading device 51 is set to transport the non-oxidized deposited N-type single crystal silicon wafer 1 to the oxidation furnace body 53 for the oxidation deposition process or transport the oxidized deposited N-type single crystal silicon wafer 1 to the next process for oxidation purification
  • the structure of platform 52 is similar to that of the boat-moving purification system 32, and plays a similar function.
  • the oxidation furnace body 53 is similar in structure to the furnace tube system 33, and is set to perform the oxidation deposition process of N-type single crystal silicon wafer 1.
  • the oxidation gas cabinet 54 is The oxidation furnace body 53 provides source gas or source liquid for the oxidation deposition process.
  • the alkali polishing and etching equipment 6 includes an alkali polishing and etching feeding device 61, an alkali polishing and etching protection device 62, an alkali polishing and etching execution device 63, an alkali polishing and etching alkali cleaning device 64.
  • BSG borosilicate glass
  • the etching feeding device 61 is docked with the low-pressure horizontal oxidation system 5, and the etching unloading device 66 is connected with the loading and unloading system 31 of the low-pressure horizontal heat treatment system 3.
  • the wafer 1 is transported to the low-pressure horizontal heat treatment system 3 for LPCVD process.
  • the LPCVD process grows a tunneling silicon oxide passivation film on the N-type single crystal silicon wafer 1, and deposits intrinsic polysilicon on the tunneling oxide layer.
  • the loading and unloading system 31 of the low-pressure horizontal heat treatment system 3 is docked with the phosphorus diffusion loading and unloading system 71 of the phosphorus diffusion equipment 7, and the phosphorus diffusion equipment 7 includes a phosphorus diffusion loading and unloading system 71, a phosphorus diffusion purification platform 72, The furnace body cabinet 73, the phosphorus diffusion gas cabinet 74 and the phosphorus source cabinet 75 for phosphorus diffusion, the N-type monocrystalline silicon wafer 1 passed through the LPCVD process is transported to the phosphorus diffusion equipment 7 for phosphorus diffusion.
  • the phosphorus diffusion equipment 7 adopts a ladder Phosphorus diffusion method performs multiple phosphorus diffusion operations on the back of the N-type single crystal silicon wafer 1 to form a multi-layer phosphorus-doped region 122 on the back of the N-type single crystal silicon wafer 1.
  • post-oxidation treatment is performed to make the N-type A phosphorous layer is formed on the back of the single crystal silicon wafer 1, thereby increasing the concentration of Phospho Silicate Glass (PSG).
  • PSG Phospho Silicate Glass
  • the phosphorus diffusion loading and unloading system 71 of the phosphorus diffusion equipment 7 is docked with the laser SE feeding end 41 of the laser SE equipment 4, and the laser SE equipment 4 after the phosphorus diffusion is laser-grooved on the non-textured surface, and the laser process equipment is used for the diffused N
  • the grooved area of the type single crystal silicon wafer 1 is locally doped with laser on the back side to form a heavily phosphorus-doped region 123.
  • the laser process equipment includes a phosphorus source to provide a phosphorus source for the heavily phosphorus-doped region 123; the low-pressure horizontal oxidation system 5 and The laser SE feeding end 42 is docked, and the N-type single crystal silicon wafer 1 doped with local phosphorous by the laser is transported to the low-pressure horizontal oxidation system 5, and the low-pressure horizontal oxidation system 5 processes the N-type single crystal silicon wafer 1 to reduce the phosphorus density
  • the doped region 123 is protected.
  • the low-pressure horizontal oxidation system 5 is docked with the alkali polishing and etching equipment 6, and the oxidized N-type single crystal silicon wafer 1 is transported to the alkali polishing and etching equipment 6 for cleaning and etching, and the surface layer of the N-type single crystal silicon wafer 1 is removed.
  • the dead layer PSG, BSG and amorphous silicon winding coating solve the problem that laser ablation is easy to form a dead layer.
  • the alkali polishing and etching equipment 6 is docked with the low-pressure horizontal oxidation system 5, the etching and unloading device 66 is connected with the loading and unloading system 31 of the low-pressure horizontal heat treatment system 3, and the N-type monocrystalline silicon wafer 1 after alkali polishing and etching is transported to
  • the low-pressure horizontal heat treatment system 3 performs an annealing process to form an oxide layer 121 on the back side of the N-type single crystal silicon wafer 1 .
  • the low-pressure horizontal oxidation system 5 is docked with the PECVD equipment 8, and the annealed N-type monocrystalline silicon wafer 1 is transported to the PECVD equipment 8, and the PECVD equipment 8 includes a PECVD loading and unloading device 81, a PECVD purification table 82, a PECVD Furnace body 83, PECVD gas cabinet 84 and PECVD vacuum pump 85, loading and unloading system 31 docked with PECVD loading and unloading device 81, PECVD furnace body 83 passivates the front side of N-type single crystal silicon wafer 1, deposits and prepares AlOx passivation layer 111 and SiNx layer 110 to reduce front reflection, increase carrier lifetime, and increase current; PECVD equipment 8 grows SiNx layer 120 on the back of N-type single crystal silicon wafer 1 .
  • the PECVD loading and unloading device 81 of PECVD equipment 8 is docked with the screen printing feeding device 91 of screen printing equipment 9, and the screen printing equipment 9 is set to prepare double-sided electrodes.
  • the N-type monocrystalline silicon wafer 1 processed by the PECVD equipment 8 is transported to the screen printing feeding device 91, and the first printing device 92 prints the back electrode 12 and the back electric field on the N-type monocrystalline silicon wafer 1, and the second printing device 94 prints the back electrode 12 and the back electric field on the N-type single crystal silicon wafer 1.
  • Type monocrystalline silicon wafer 1 is printed with positive electrode 11, positive electrode main grid and fine grid, and after printing, it is sintered by screen printing sintering device 95 to become a finished battery sheet, and after sintering, it is screen printed by detection device 96 and screen printing sorting device 97 to remove unqualified cells.
  • the solar photovoltaic cell low-voltage horizontal phosphorus diffusion production line also includes electrical injection equipment.
  • the electrical injection equipment can adopt equipment in related technologies.
  • the battery sheet is improved by the electrical injection equipment to improve its anti-attenuation performance.
  • the electrical injection equipment is docked with the screen printing sorting device 97, Carriers are injected into the cell by electrical injection to achieve hydrogen passivation.
  • the present application also includes a method for producing battery sheets using the above-mentioned low-voltage horizontal phosphorus diffusion production line for solar photovoltaic cells, as shown in Figure 2, the method includes the following steps:
  • Step 1 cleaning and making texture: cleaning the N-type single crystal silicon wafer 1 in a solution to remove the surface damage layer, cutting line marks and metal ions.
  • Step 2 boron diffusion: put the cleaned N-type single crystal silicon wafer 1 into the boat and push it into the furnace tube of the boron diffusion process for boron diffusion to form the boron doped region 112 .
  • Step 3 Laser SE: Locally doping the textured surface of the N-type single crystal silicon wafer 1 after boron diffusion with laser to form heavily boron doped regions 113 .
  • Step 4 Oxidation: Oxidize the N-type single crystal silicon wafer 1 after laser SE to protect the boron heavily doped region 113.
  • Step 5 Etching and polishing: removing the dead layer BSG on the front surface of the N-type single crystal silicon wafer 1, and chemically polishing the back of the N-type single crystal silicon wafer 1.
  • Step 6 LPCVD: growing an oxide layer and an amorphous silicon layer on the surface of the N-type single crystal silicon wafer 1 .
  • Step 7 Phosphorus diffusion: the silicon wafer treated by LPCVD is pushed into the phosphorus diffusion equipment for multiple times of phosphorus diffusion, forming multiple layers on the back to form a phosphorus doped region 122, after phosphorus diffusion, post-oxidation treatment is performed to make N-type single crystal A phosphorus-coated layer was formed on the back side of the sheet 1 .
  • Step 8 Laser SE: locally doping the backside of the silicon wafer after phosphorous diffusion with laser to form heavily phosphorous doped regions 123 .
  • Step 9 Oxidation: Oxidize the silicon wafer after laser SE to protect the phosphorus heavily doped region 123 .
  • Step 10 etching and polishing: removing the dead layer BSG, dead layer PSG and amorphous silicon wrapping layer on the surface layer of the N-type single crystal silicon wafer 1 .
  • Step 11 annealing: forming an oxide layer 121 on the back of the N-type single crystal silicon wafer 1 .
  • PECVD furnace body 83 passivates the front side of the N-type single crystal silicon wafer 1, and deposits and prepares an AlOx passivation layer 111 and a SiNx layer 110 to reduce frontal reflection, increase carrier life, and increase current; PECVD equipment 8. Growing a SiNx layer 120 on the back of the N-type single crystal silicon wafer 1.
  • Step 13 screen printing process: preparing double-sided electrodes on the surface of the N-type single crystal silicon wafer 1 .
  • Step 14 electric injection process: the electric injection device injects carriers into the cell through electric injection to realize hydrogen passivation.
  • This application provides a low-voltage horizontal phosphorus diffusion production line for solar photovoltaic cells, which sequentially performs texturing, boron diffusion, laser SE, oxidation, alkali polishing, LPCVD, phosphorus diffusion, laser SE, oxidation, and etching on an N-type single crystal silicon wafer 1 , annealing, PECVD, screen printing and electric injection, by adding a low-pressure horizontal heat treatment system and alkali polishing etching equipment to greatly adapt and use the PERC-SE production line, the production line equipment is almost wasteless, and the life cycle of the PERC production line is extended; Apply to add cleaning process and multi-layer phosphorus diffusion deposition method after laser SE process to solve the problem of insufficient phosphorus source for laser ablation and easy formation of dead layer in laser ablation; this application refines and decomposes the structure of the phosphorus doped region, increases the phosphorus weight
  • the doped area can optimize the phosphorus doping effect; the heavily doped phosphorus area

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Abstract

本文公开了一种太阳能光伏电池低压水平磷扩散生产线，包括制绒设备、低压水平热处理系统、激光SE设备、低压水平氧化系统、碱抛和刻蚀设备、PECVD设备、丝网印刷设备和电注入设备，制绒设备执行N型单晶硅片的制绒工序，低压水平热处理系统执行N型单晶硅片的硼扩散、磷扩散和退火工序，激光SE设备执行N型单晶硅片正面的激光局部硼掺杂以及N型单晶硅片背面的激光局部磷掺杂，低压水平氧化系统对硼重掺杂区和磷重掺杂区进行保护，碱抛和刻蚀设备执行N型单晶硅片的碱抛和刻蚀工序，PECVD设备执行N型单晶硅片的钝化层、正膜和背膜工序，丝网印刷设备执行N型单晶硅片的双面电极的制备工序以形成以电池片，电注入设备向电池片注入载流子。

Description

太阳能光伏电池低压水平磷扩散生产线
本申请要求在2021年11月26日提交中国专利局、申请号为202111419221.9的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本申请涉及太阳能电池制造技术领域，例如涉及太阳能光伏电池低压水平磷扩散生产线。
背景技术
主流的P型单晶电池技术为钝化发射器和后部电池(Passivated Emitter and Rear Cell，PERC)技术，该技术的制造工艺简单、成本低，叠加选择性发射极(Selective Emitter，SE)技术提升电池转换效率。随着P型电池的效率接近效率极限，N型电池技术将成为未来发展的主流方向，且N型电池相较于P型电池，具有转换效率高、双面率高、温度系数低、无光衰、弱光效应好、载流子寿命更长等优点，N型电池采用的技术与P型电池采用的技术不同，所以N型电池的生产设备也不同于P型电池的生产设备，因此，PERC的设备无法适配N型电池，PERC生产线设备会被闲置，造成浪费。
发明内容
本申请提供太阳能光伏电池低压水平磷扩散生产线。
一种太阳能光伏电池低压水平磷扩散生产线，包括制绒设备、低压水平热处理系统、激光SE设备、低压水平氧化系统、碱抛和刻蚀设备、等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)设备、丝网印刷设备和电注入设备；制绒设备设置为执行N型单晶硅片的制绒工序，低压水平热处理系统设置为执行N型单晶硅片的硼扩散工序、磷扩散工序和退火工序，激光SE设备设置为执行N型单晶硅片正面的激光局部硼掺杂以形成硼重掺杂区以及N型单晶硅片背面的激光局部磷掺杂以形成磷重掺杂区，低压水平氧化系统设置为执行N型单晶硅片的氧化工序对硼重掺杂区和磷重掺杂区进行保护，碱抛和刻蚀设备设置为执行N型单晶硅片的碱抛工序和刻蚀工序，PECVD设备设置为执行N型单晶硅片的钝化层工序、正膜工序和背膜工序，丝网印刷设备设置为执行N型单晶硅片的双面电极的制备工序以形成以电池片，电注入设备设置为向电池片注入载流子。
附图说明
图1为本申请实施例提供的一种电池结构示意图；
图2为本申请实施例提供的一种电池制备流程示意图；
图3为本申请实施例提供的一种制绒设备示意图；
图4为本申请实施例提供的一种低压水平热处理系统示意图；
图5为本申请实施例提供的一种低压水平热处理系统的上下料系统示意图；
图6为本申请实施例提供的另一种低压水平热处理系统的上下料系统示意图；
图7为本申请实施例提供的另一种低压水平热处理系统的上下料系统示意图；
图8为本申请实施例提供的一种低压水平热处理系统中舟示意图；
图9为图8中A的放大示意图；
图10为本申请实施例提供的一种低压水平热处理系统的搬舟净化系统和炉管系统示意图；
图11为本申请实施例提供的一种低压水平热处理系统的搬舟净化系统内部示意图；
图12为本申请实施例提供的一种搬舟净化系统中搬舟系统示意图；
图13为本申请实施例提供的一种搬舟净化系统中推舟系统示意图；
图14为本申请实施例提供的一种搬舟净化系统中传输系统示意图；
图15为本申请实施例提供的一种低压水平热处理系统的炉管系统内部示意图；
图16为本申请实施例提供的一种激光SE设备示意图；
图17为本申请实施例提供的一种低压水平氧化系统示意图；
图18为本申请实施例提供的一种碱抛和刻蚀设备示意图；
图19为本申请实施例提供的一种磷扩散设备示意图；
图20为本申请实施例提供的一种PECVD设备示意图；
图21为本申请实施例提供的一种丝网印刷设备示意图。
具体实施方式
以下通过具体实例说明本申请的实施方式。
以下实施例中所提供的图示仅以示意方式说明本申请的基本构想，图中仅显示与本申请中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时每个组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。
本申请实施例中所有方向性指示(诸如上、下、左、右、前、后、横向、纵向……)仅用于解释在一特定姿态下多个部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
实施例一：
如图1-21所示，一种太阳能光伏电池低压水平磷扩散生产线，包括N型单晶硅片1、制绒设备2、低压水平热处理系统3、激光SE设备4、低压水平氧化系统5、碱抛和刻蚀设备6、PECVD设备8、丝网印刷设备9和电注入设备，制绒设备2设置为执行N型单晶硅片1的制绒工序，低压水平热处理系统3设置为执行N型单晶硅片1的硼扩散工序、磷扩散工序和退火工序，激光SE设备4设置为执行N型单晶硅片1正面的激光局部硼掺杂以形成硼重掺杂区113以及N型单晶硅片1背面的激光局部磷掺杂以形成磷重掺杂区123，低压水平氧化系统5设置为执行N型单晶硅片1的氧化工序对硼重掺杂区113和磷重掺杂区123进行保护，碱抛和刻蚀设备6设置为执行N型单晶硅片1的碱抛工序和刻蚀工序，PECVD设备8设置为执行N型单晶硅片1的钝化层工序、正膜工序和背膜工序，丝网印刷设备9设置为执行N型单晶硅片1的双面电极的制备工序以形成以电池片，电注入设备设置为向电池片注入载流子。
如图3所示，制绒设备2包括制绒上料装置20、制绒预清洗装置21、制绒装置22、制绒后清洗装置23、制绒酸洗装置24、制绒预脱水装置25、制绒烘干装置26和制绒下料装置27，制绒上料装置20、制绒预清洗装置21、制绒装置22、制绒后清洗装置23、制绒酸洗装置24、制绒预脱水装置25、制绒烘干装置26和制绒下料装置27依次连接，N型单晶硅片1经制绒上料装置20移动至制绒预清洗装置21进行清洗，制绒预清洗装置21设置为去除N型单晶硅片1表面的杂质和损伤层，为后续的制绒准备，制绒装置22采用碱溶液在N型单晶硅片1的表面形成绒面，碱溶液可采用氢氧化钠或氢氧化钾。常规情况下，绒面形成多三角形，以增加太阳光在N型单晶硅片1表面的折射次数，增加光线在N型单晶硅片1中的光程，提高太阳光的利用率，制绒后的N型单晶硅片1经制绒后清洗装置23以及制绒酸洗装置24进行清洗，清洗剂采用RCA1(双氧水，氨水，去离子水(Vo l.1:1:5))和RCA2(盐酸，氨水，去离子水(1:1:6))，去除N型单晶硅片1表面的杂质、表面损伤层、切割线痕以及金属离子，为后续的 扩散做准备，并经制绒预脱水装置25、制绒烘干装置26保持N型单晶硅片1表面的洁净度，由制绒下料装置27将N型单晶硅片1输送至低压水平热处理系统3进行处理。
如图4-15所示，低压水平热处理系统3包括上下料系统31、搬舟净化系统32和炉管系统33，制绒设备2的制绒下料装置27与低压水平热处理系统3的上下料系统31对接，上下料系统31包括上料导片组件311、下料导片组件312、导片流转输送机构313、硅片抓取装置314、上料搬运机构315、下料搬运机构316和舟流转机构317，搬舟净化系统32包括搬舟系统321、推舟系统322、净化冷却系统323、传输系统324和净化台框架325，炉管系统33包括炉管机架331和工艺炉管332，传输系统324分别与舟流转机构317和搬舟系统321对接，设置为执行上下料系统31和搬舟净化系统32之间舟的流转，推舟系统322与工艺炉管332对接，设置为执行舟搬舟净化系统32和炉管系统33之间舟的流转，舟在上下料系统31、搬舟净化系统32和炉管系统33流转，舟内的硅片水平放置。舟包括舟限制板3194，硅片背对背水平放置舟限制板3194内，舟限制板3194对硅片的三侧进行遮挡防止绕镀。
上下料系统31包括上料导片组件311、下料导片组件312、导片流转输送机构313、硅片抓取装置314、上料搬运机构315、下料搬运机构316和舟流转机构317，上料导片组件311、下料导片组件312、导片流转输送机构313、上料搬运机构315、下料搬运机构316和舟流转机构317构成上下料系统31的导片装置，所述硅片抓取装置314包括六轴机器人以及硅片抓取分合机构，硅片抓取分合机构控制硅片的吸取和翻面，所述六轴机器人通过硅片抓取分合机构控制硅片的移动，所述上料导片组件311、硅片抓取装置314、上料搬运机构315和舟流转机构317成硅片上料系统，所述下料导片组件312、硅片抓取装置314、下料搬运机构316和舟流转机构317构成硅片下料系统。
所述上料导片组件311包括上料来料对接输送机构3111、上料缓存输送机构3112、上料花篮升降机构3113、上料花篮输送机构3114、上料硅片输送机构3115、上料硅片缓存机构3116以及上料接片机构3117，上料花篮输送机构3114位于上料花篮升降机构3113下侧，所述下料导片组件312包括下料来料对接输送机构3121、下料缓存输送机构3122、下料花篮升降机构3123、下料花篮输送机构3124、下料硅片输送机构3125、下料硅片缓存机构3126以及下料接片机构3127，下料花篮输送机构3124位于下料花篮升降机构3123下侧，导片流转输送机构313分别与上料花篮输送机构3114、下料花篮输送机构3124连接，花篮经上料花篮输送机构3114、导片流转输送机构313以及下料花篮输送机构3124在上料导片组件311和下料导片组件312间流转。
本实施例中，上料导片组件311和下料导片组件312结构相同，所述上料导片组件311和下料导片组件312分别设有对称分布的两组，以下以上料导片组件311为例进行说明，所述上料来料对接输送机构3111采用自动导引运输车(Automated Guided Vehicle，AGV)输送线，其长度可容纳多组花篮同时进行输送，上料来料对接输送机构3111在输送方向的两端固设有来料阻挡气缸，靠近上料缓存输送机构3112的上料来料对接输送机构3111端面的两侧固设有对称的两组来料对射传感器，两组来料对射传感器和来料阻挡气缸共同配合实现花篮依次单个输送到上料缓存输送机构3112的目的，另外，上料来料对接输送机构3111还设置有多个传感器(图未显示)，传感器的数量与上料来料对接输送机构3111一次性承载花篮的数量一致，且相邻传感器的间距可调，传感器对花篮满缺料状态进行检测，实现了对硅片数量的精细控制。
所述上料花篮升降机构3113包括升降输送组件和花篮升降组件，花篮升降组件控制升降输送组件升降，所述升降输送组件的长度与单个花篮长度相配，上料缓存输送机构3112将单个花篮输送至升降输送组件上，位于升降输送组件上的花篮通过夹紧装置固定，防止上料硅片输送机构3115取片时造成偏移，影响取片效率，本实施例中，所述花篮升降组件采用滚珠丝杆传动方式控制升降输送组件升降，所述上料花篮升降机构3113还包括设置为检测花篮内硅片余量的对射传感器以及设置为检测来料花篮朝向的朝向传感器，所述朝向传感器防止花篮输送时发生反放错误。
所述上料硅片输送机构3115将位于上料花篮升降机构3113上花篮内的硅片进行取片，并通过上料花篮升降机构3113实现依次取片的功能，所述上料硅片输送机构3115依次延伸上料硅片缓存机构3116和上料接片机构3117，输送至上料硅片输送机构3115，并通过上料硅片输送机构3115将硅片流入上料接片机构3117，上料硅片输送机构3115对硅片进行调整，使硅片在传输过程中保持齐整，便于硅片的流入，提高硅片的流入效率。
所述上料接片机构3117设置有上料接片槽，上料接片机构3117将上料硅片输送机构3115上输送的硅片依次导入上料接片槽。
所述上料硅片缓存机构3116位于上料硅片输送机构3115和上料接片机构3117之间，所述上料硅片缓存机构3116固设有多个缓存槽，缓存槽长度方向与上料硅片输送机构3115硅片输送方向一致，相邻的缓存槽竖直平行设置，所述上料硅片缓存机构3116作为临时储存硅片的机构，避免上料接片机构3117中上料接片槽装满硅片但未被取片的状况，实现了将上料硅片输送机构3115上输送的硅片依次导入缓存槽的目的。
所述导片流转输送机构313包括流转输送组件3131和流转移动组件3132， 所述流转移动组件3132包括横移动力组件，所述横移动力组件采用滚珠丝杆传动方式驱动流转输送组件3131相对于流转移动组件3132移动，所述流转输送组件3131在移动过程中分别与上料花篮输送机构3114和下料花篮输送机构3124相接，流转输送组件3131上端面与上料花篮输送机构3114和下料花篮输送机构3124上端面处于同一水平面，保证花篮的平稳过渡。
六轴机器人3141控制硅片抓取分合机构3142空间移动，使硅片移动以及取放操作更加灵活性，有利于提高硅片取放的速度以及整体的自动化程度。
所述硅片抓取分合机构3142包括硅片抓取分片机构、硅片抓取吸盘机构以及硅片抓取旋转机构，所述硅片抓取吸盘机构包括吸盘吸取装置和控制吸盘吸取装置错位移动的调整装置，所述硅片抓取旋转机构包括吸盘吸片装置和控制吸盘吸片装置转动的旋转装置，六轴机器人3141控制硅片抓取分合机构3142的移动，所述硅片抓取分片机构通过硅片抓取吸盘机构与硅片抓取旋转机构控制硅片的移动，所述吸盘吸取装置和吸盘吸片装置控制硅片的吸取分合，所述旋转装置控制硅片翻面。
所述上料搬运机构315包括上料搬运定位移动组件3151、上料搬运硅片顶升组件3152、上料搬运硅片规整组件3153以及上料搬运离子吹风组件，所述下料搬运机构316包括下料搬运定位移动组件3160、下料搬运硅片顶升组件3161、下料搬运硅片规整组件3162以及下料搬运离子吹风组件，本实施例中，上料搬运机构315和下料搬运机构316结构相同。
所述舟流转机构317包括传输对接输送组件3171、夹爪组件3172和控制夹爪组件3172移动的移动模组组件3173，传输对接输送组件3171承载多个舟，移动模组组件3173控制夹爪组件3172夹持舟在传输对接输送组件3171和上料搬运机构315间流转。
为避免出现绕镀问题，本实施例采用特制的舟对硅片进行承托，舟承托硅片进入工艺炉管进行工艺，舟319包括包括舟顶板3191、舟底板3192、舟支撑杆3193和舟限制板3194；舟顶板3191和舟底板3192通过舟支撑杆3193连接，形成放置硅片的放置空间。舟整体结构简单，自重较轻，尽可能的提升了载重范围。舟支撑杆3193沿长度方向间隔设置有舟夹板31931，相邻的两组舟夹板31931形成舟夹板腔31932，舟限制板3194安装在夹板腔3193内。
舟支撑杆3193设置多组，其分布在舟顶板3191和舟底板3192之间，舟支撑杆3193数量、舟顶板3191形状、舟底板3192形状都与硅片相适应。例如，硅片是矩形，整个舟就形成长方体，四根舟支撑杆3193分布在舟顶板3191和舟底板3192的四个角上。舟夹板31931固设于左右两侧相对舟支撑杆3193的相对面上，每根舟支撑杆3193上相互对应的夹板腔3193处于同一水平面，舟 限制板3194安装在位于同一水平面的多组夹板腔3193内。
舟限制板3194包括两组安装于舟夹板腔3193的舟限制侧板以及连接两组舟限制侧板的舟限制连接板，舟限制侧板和舟限制连接板结构相同，一实施例中，舟限制侧板和舟限制连接板一体成型，本实施例中，夹板腔3193在竖直方向的剖面形状设置为长方形，舟限制侧板的上下侧面与夹板腔3193的上下侧面相抵，较长的夹板腔3193可以保证舟限制侧板安装的稳定性，舟限制侧板和舟限制连接板上均固设有硅片安置腔31941，舟限制侧板和舟限制连接板上对应的硅片安置腔31941处于同一水平面，硅片安置腔31941在竖直方向的剖面形状不做限定，本实施例硅片安置腔31941采用方形，硅片通过线接触或面接触与硅片安置腔31941进行接触来进行支撑，硅片安置腔31941可容纳两组硅片叠加安装。
本实施例中硅片放置在舟内时，除硅片的放置方向外，硅片的三侧被舟限制板3194遮挡，可以有效阻碍气体从背靠背的硅片缝隙进入背靠背的贴合面，从而有效避免出现绕镀，实现无绕镀或微绕镀，可以去除对绕镀层的处理，从而实现在同一设备系统中连续工艺，无需卸片离线去进行湿法处理。
舟顶板3191与舟底板3192平行设置，尽可能的最大化提供放置舟板的空间。因为舟顶板3191与舟底板3192非平行设置时，会使得部分空间无法用来水平放置硅片，从而浪费了不必要的空间，并增加了舟的自重。
舟采用非导电、耐高温、抗压材料。例如材料选择为石英或碳化硅材料，以此尽可能的降低自身重量，提高整个舟对舟板的放置数量，还符合舟非导电、耐高温的特性。
为保证舟整体结构的稳定性，舟支撑杆3193之间固设有舟连接轴3195，舟连接轴3195固设有舟托板31951，舟托板31951与整个舟的重心处于同一水平面，有利于取放舟时的稳定性，不易在搬运中发生舟的偏位；舟托板31951的形状可以根据实际需要进行设置，一般采用矩形，也可以采用其它形状，只要便于机械手的取放避位以及舟托的承托即可。
在上下料系统31的实施过程中，装满硅片的花篮由上料来料对接输送机构3111依次将单个花篮输送至上料缓存输送机构3112，上料缓存输送机构3112将花篮输送至上料花篮升降机构3113，通过上料硅片输送机构3115将花篮内的硅片依次输出，通过上料硅片输送机构3115和上料接片机构3117的协同运行，将位于输送线上的硅片依次流入上料接片机构3117的上料接片槽，硅片抓取分合机构3142的吸盘吸取装置从上料接片槽吸取硅片，通过六轴机器人3141将硅片移动至上料硅片输送机构3115并进行硅片背对背的合片，重复上述步骤直至将上料硅片输送机构3115上的两组舟装满，装满硅片的舟通过由传输对接输 送组件3171控制的夹爪组件3172搬运至传输对接输送组件3171的舟托中，直至舟托装满舟，传输对接输送组件3171与搬舟净化系统32对接，传输对接输送组件3171将舟托移动至搬舟净化系统32，实现了硅片由导片装置到搬舟净化系统32的移动过程，搬舟净化系统32将已工艺的硅片由搬舟净化系统32传输至传输对接输送组件3171，装满已工艺硅片的舟通过夹爪组件3172搬运至下料搬运机构316，根据上述结构反向流转，从而实现硅片由搬舟净化系统32到导片装置的移动过程。
搬舟净化系统32包括搬舟系统321、推舟系统322、净化冷却系统323、传输系统324和净化台框架325，搬舟系统321、推舟系统322和传输系统324安装于净化台框架325内部，净化冷却系统323位于净化台框架325外部，传输系统324将位于上下料系统31装未工艺硅片的舟传输至搬舟系统321，并将装已工艺硅片的舟传输至上下料系统31，传输系统324设置为执行搬舟系统321与上下料系统31间舟的交互，搬舟系统321将装未工艺硅片的舟移动至推舟系统322，推舟系统322将装未工艺硅片的舟移动至炉管系统33进行工艺，推舟系统322将装已工艺硅片的舟移出并通过搬舟系统321移动至传输系统324，净化冷却系统323对搬舟净化系统32的气体进行净化。
搬舟系统321包括搬舟立柱3211、搬舟头3212、Z轴传动结构3214；其中搬舟头3212通过Z轴传动结构活动设置于搬舟立柱3211上；搬舟头3212包括一级手臂、二级手臂、X轴传动结构一、X轴传动结构二以及搬舟机械手爪3213；一级手臂和二级手臂通过X轴传动结构一活动连接，搬舟机械手爪3213通过X轴传动结构二活动设置于二级手臂上；X轴传动结构一包括X轴伺服电机一，X轴伺服电机一设置于一级手臂的外侧；搬舟机械手爪3213设置为支撑托起舟托。
搬舟立柱3211上还固定设置有缓存搬舟机械手3215，缓存搬舟机械手3215对应设置于两根搬舟立柱3211上，缓存搬舟机械手3215设置为缓存舟托；在本例中一根搬舟立柱3211上设置有六个缓存搬舟机械手3215，相对的，两根搬舟立柱3211上能够同时缓存的舟托的最多数量为六个。光电限位传感器3216设置在搬舟立柱3211上。
搬舟系统321通过在搬舟立柱3211上设置Z轴传动结构3214，控制搬舟头3212在Z轴方向的移动；通过设置搬舟头3212包括X轴传动结构一和X轴传动结构二，控制二级手臂、搬舟机械手爪3213在X轴方向的移动。
搬舟系统321实施过程中，传输系统324将舟托从上下料系统31传输，搬舟机械手爪3213将舟托从传输系统324移动至推舟系统322，在连续生产中，缓存搬舟机械手3215对舟托进行缓存。
推舟系统322包括推舟传送机构3221、推舟桨3222和推舟炉门3223，推 舟桨3222与推舟炉门3223连接，两者同步移动，推舟桨3222设置为支撑和承载舟托和舟319，舟319装载硅片，推舟传送机构3221通过驱动推舟桨3222往返移动控制舟托和舟319输入或输出工艺炉管。
所述推舟传送机构3221与推舟炉门3223固设连接，推舟传送机构3221的滑动方向与工艺炉管轴向一致。
净化冷却系统323包括净化装置和冷却装置，净化装置包括第一空气过滤净化器、第二空气过滤净化器、净化风机、第一进风口和第二进风口，第一空气过滤净化器、第二空气过滤净化器、净化风机、第一进风口和第二进风口依次横向设置于净化台框架325的上方通过管道相连，在本实施例中，所述第一空气过滤净化器和第二空气过滤净化器采用空气滤芯净化，为物理净化方式。其中第一空气过滤净化器和第二空气过滤净化器至少为一组，在本实施例中设置为两组第一空气过滤净化器和第二空气过滤净化器，第一空气过滤净化器以及第二空气过滤净化器分别通过气管道结构与净化台框架325的内部空间实现联通。第一空气过滤净化器以及第二空气过滤净化器由净化风机将净化台框架325外部的空气进行净化后通入净化台框架325的内部，因硅片工艺需要洁净，因此通入搬舟净化系统32框架的气体，需要先经过过滤净化。本实施例中第一空气过滤净化器和第二空气过滤净化器设置为两组的目的是能够保证净化台框架325内部的气流均匀，避免出现一侧的气流大一侧的气流小的情况的发生，保证硅片的散热均匀。通过设置第一空气过滤净化器以及第二空气过滤净化器通入净化后的冷空气能够极大程度实现净化台框架325内部的降温且不引入污染。
净化风机以及第一进风口和第二进风口是为了保证净化台框架325内部的空气流通，净化风机分别与第一进风口以及第二进风口连接，第一进风口和第二进风口上分别设置有气流的导出口，其中导出口设置于第一进风口和第二进风口的侧面，目的是为了在第一进风口和第二进风口不工作时避免灰尘顺着第一进风口和第二进风口落入净化台框架325的内部。净化台框架325外部的气体能够顺着第一进风口和第二进风口抽进到净化台框架325内部中。第一进风口和第二进风口结合第一空气过滤净化器和第二空气过滤净化器实现净化台框架325内部和外部的气流流通。
冷却装置包括第一进风口、第二进风口、出风口和净化风机，出风口位于搬舟净化系统32内部。为了提高净化台框架325内部的冷却的效率，第一进风口、第二进风口、出风口和净化风机构成风冷方式，本实施例还可以采用风冷装置结合水冷装置的方式，水冷装置包括水冷盘和水冷管道，所述水冷盘和水冷管道形成封闭的循环回路，所述水冷盘，一侧设置有水冷盘风机，水冷盘上 设置水冷盘风机设置为实现水冷盘的快速降温。可将搬舟净化系统32内部的热空气抽取上来经过水冷盘冷却后，再排放到搬舟净化系统32外部或者排放到搬舟净化系统32内部实现内部循环。搬舟净化系统32内部的热气流经过水冷盘时，热气流与水冷盘盘管上设置的的散热翅片产生热交换，从而使热气流的温度下降，降温后的热气流能够直接排向外部或通向内部，散热翅片采用铝或铜材质。在本实施例中，所述水冷盘还设置有进出水管。所述进出水管垂直设置于净化台框架325的顶部，进出水管通过阀门以及管道与水冷盘连通。其中水冷管道可以设置于净化台框架325的上方、侧面、内部三者之一或者其组合，在本实施例中水冷管道设置于净化台框架325的上方、侧边以及内部，通过水冷结合风冷，实现净化台框架325内部的快速降温。为了提高水冷效率，还能够采用特定的冷却液替换水介质。
传输系统324包括传输驱动组件3240、传输机构3241、传输机架3242、传输第二皮带3247和传输张紧组件，所述传输机构3241位于传输机架3242上，通过传输机架3242对传输机构3241进行支撑，传输驱动组件3240通过传输第二皮带3247对舟托板组件进行传输，所述传输张紧组件控制传输第二皮带3247的张紧力。
传输系统324的传输过程中，传输机构3241的传输驱动组件3240控制传输第二皮带3247传动，传输第二皮带3247传动带动位于舟托板组件上的舟托移动，从而将已工艺的舟托传向上下料系统31，将未工艺的舟托由上下料系统31传到搬舟系统321，保证传输机构3241实现对舟托稳定以及可靠的传输。
炉管系统33包括炉管机架331和工艺炉管332，工艺炉管332呈卧式安装在炉管机架331上，工艺炉管332的开口部朝向推舟系统322，推舟系统322将舟319通过推舟传送机构3221和推舟桨3222移动至工艺炉管332进行工艺，或将已工艺的舟319输出工艺炉管332，当推舟桨3222最大程度将舟319推进工艺炉管332中时，推舟炉门3223可以将工艺炉管332的炉口密封封闭，从而使得工艺炉管332内形成一个与外部隔绝的腔体，工艺炉管332的尾部设有能够通入工艺炉管内部的气体输送装置333；气体输送装置333对工艺炉管332的内部气压进行调节，通常来说，在通入反应气体前，需要将炉内抽真空，形成真空炉的状态，之后再根据实际的反应需要，通入气体进行反应、催化或者保护。
炉管系统33包括工艺炉管332，每种工艺炉管332与搬舟系统321对应，工艺炉管332呈上下并排排列，工艺炉管332也可以左右并排排列或者左右和上下同时并排排列，形成行和列组合的方式，可以提升产量；每种工艺炉管332和搬舟系统321均能够独立工作，实现连续生产，工艺炉管332包括低压力化 学气相沉积(Low Pressure Chemical Vapor Deposition，LPCVD)工艺炉管、硼扩散工艺炉管和退火工艺炉管，设置为N型单晶硅片1的硼扩散、磷扩散和退火工序，节省工艺设备和人工，减少硅片转运损伤；炉管系统33通过多组管道并排设计的布置方式，能够实现上下料系统31和硅片工艺的同步有序进行，在一炉反应的过程中，可以进行前一炉的下料以及后一炉的上料，实现连续高产量生产；本实施例中，炉管系统33外置真空泵34，设置为执行LPCVD工艺；以及气源柜35，设置为执行硼扩散工艺。
所述气体输送装置333包括反应气体输送装置和尾气处理装置，所述反应气体输送装置向工艺炉管332通入工艺气体，所述尾气处理装置设置为辅助排放气体或者平衡气压。
炉管系统33还设置有炉腔风冷装置335和炉管机架冷却装置334，炉腔风冷装置335包括炉管机架风冷盘3351，炉管机架风冷盘3351设置在炉管机架331的顶部，炉管机架331的顶部还设置有多组风冷排风口3352，每组风冷排风口3352对应设有一个排风扇，排风扇通过净化风机驱动，每组工艺炉管332所在的炉管机架331上设有一个向上的通风管，通风管从每组工艺炉管332的侧面连通炉管机架风冷盘3351，炉腔风冷装置335将炉管机架331的热量排出，炉管机架冷却装置334降低排风的热量，大大降低了设备工作时工艺炉管的高温对炉管环境的热辐射影响，使得工艺温度不至于过高而影响电气设备的正常工作，并可以大大缩短硅片的生产工艺周期，进而提高生产效率；并且，采用风冷和水冷两种冷却方式相结合，通过管路结构与工艺炉管内部相连接，解决工艺炉管的发热对硅片生产工艺的影响，进而加快工艺冷却速度，提高工艺成品率，并且降低电器设备的故障率。
N型单晶硅片1的正面经制绒后，由制绒下料装置27输送至低压水平热处理系统3进行硼扩散工艺，在N型单晶硅片1的制绒面经过硼扩散工艺形成硼掺杂区112。
如图16所示，经硼扩散后的N型单晶硅片1输送至激光SE设备4，激光SE设备4包括激光SE上料端41、激光处理腔43和激光下料端42，低压水平热处理系统3的上下料系统31与激光SE设备4的激光SE上料端41对接，激光处理腔43内设置有激光工艺设备，激光工艺设备对制绒面激光开槽，激光工艺设备对扩散后的N型单晶硅片1的开槽区域进行正面激光局域掺杂，形成硼重掺杂区113，激光工艺设备包括硼源，为硼重掺杂区113提供硼源。
如图17所示，低压水平氧化系统5包括氧化上下料装置51、氧化净化台52、氧化炉体53以及氧化气柜54，经激光SE设备4掺杂的N型单晶硅片1输送至低压水平氧化系统5，低压水平氧化系统5对N型单晶硅片1进行处理， 对硼重掺杂区113进行保护。
氧化上下料装置51设置为将未氧化沉积的N型单晶硅片1输送至氧化炉体53进行氧化沉积工序或将已氧化沉积的N型单晶硅片1输送至下一工序，氧化净化台52结构与搬舟净化系统32结构类似，起到类似的功能，氧化炉体53与炉管系统33结构相似，设置为执行N型单晶硅片1的氧化沉积工序，氧化气柜54为氧化炉体53提供氧化沉积工序的源气或源液。
如图18所示，碱抛和刻蚀设备6包括碱抛和刻蚀上料装置61、碱抛和刻蚀保护装置62、碱抛和刻蚀执行装置63、碱抛和刻蚀碱洗装置64、碱抛和刻蚀酸洗装置65和碱抛和刻蚀下料装置66，碱抛和刻蚀设备6的碱抛和刻蚀上料装置61与低压水平氧化系统5的氧化上下料装置51对接，经氧化处理的N型单晶硅片1输送至碱抛和刻蚀设备6进行清洗和刻蚀，去除N型单晶硅片1正面表层的死层硼硅玻璃(Boro Silicate Glass，BSG)，并将N型单晶硅片1背面进行化学抛光，解决激光烧蚀易形成死伤层的问题。
本实施例中，刻蚀上料装置61与低压水平氧化系统5对接，刻蚀下料装置66与低压水平热处理系统3的上下料系统31对接，经碱抛和刻蚀的N型单晶硅片1传输至低压水平热处理系统3，进行LPCVD工序，LPCVD工序在N型单晶硅片1生长隧穿氧化硅钝化薄膜，并在隧穿氧化层上沉积本征多晶硅。
如图19所示，低压水平热处理系统3的上下料系统31与磷扩散设备7的磷扩散上下料系统71对接，磷扩散设备7包括磷扩散上下料系统71、磷扩散净化台72、磷扩散炉体柜73、磷扩散气柜74和磷扩散磷源柜75，经LPCVD工序的N型单晶硅片1输送至磷扩散设备7进行磷扩散，本实施例中，磷扩散设备7采用阶梯磷扩散方式在N型单晶硅片1的背面进行多次磷扩散操作，使N型单晶硅片1的背面形成多层磷掺杂区122，磷扩散后进行后氧化处理，使N型单晶硅片1的背面形成附磷层，从而增加了磷硅酸盐玻璃(Phospho Silicate Glass，PSG)的浓度。
磷扩散设备7的磷扩散上下料系统71与激光SE设备4的激光SE上料端41对接，磷扩散后的激光SE设备4在非制绒面激光开槽，激光工艺设备对扩散后的N型单晶硅片1的开槽区域进行背面激光局域掺杂，形成磷重掺杂区123，激光工艺设备包括磷源，为磷重掺杂区123提供磷源；低压水平氧化系统5与激光SE下料端42对接，将经激光局域磷掺杂的N型单晶硅片1输送至低压水平氧化系统5，低压水平氧化系统5对N型单晶硅片1进行处理对磷重掺杂区123进行保护。
低压水平氧化系统5与碱抛和刻蚀设备6对接，经氧化处理的N型单晶硅片1输送至碱抛和刻蚀设备6进行清洗和刻蚀，去除N型单晶硅片1表层的死 层PSG、BSG和非晶硅绕镀层，解决激光烧蚀易形成死伤层的问题。
碱抛和刻蚀设备6与低压水平氧化系统5对接，刻蚀下料装置66与低压水平热处理系统3的上下料系统31对接，经碱抛和刻蚀的N型单晶硅片1传输至低压水平热处理系统3，进行退火工序，形成N型单晶硅片1背面的氧化层121。
如图20所示，低压水平氧化系统5与PECVD设备8对接，经退火处理的N型单晶硅片1输送至PECVD设备8，PECVD设备8包括PECVD上下料装置81、PECVD净化台82、PECVD炉体83、PECVD气柜84和PECVD真空泵85，上下料系统31与PECVD上下料装置81对接，PECVD炉体83对N型单晶硅片1正面进行钝化，沉积制备AlOx钝化层111和SiNx层110，以减少正面反射，增加载流子寿命，提高电流；PECVD设备8在N型单晶硅片1背面生长SiNx层120。
如图21所示，PECVD设备8的PECVD上下料装置81与丝网印刷设备9的丝网印刷上料装置91对接，丝网印刷设备9设置为制备双面电极，丝网印刷设备9包括丝网印刷上料装置91、第一印刷装置92、丝网印刷烘干装置93、第二印刷装置94、丝网印刷烧结装置95、丝网印刷检测装置96和丝网印刷分选装置97，经PECVD设备8处理的N型单晶硅片1输送至丝网印刷上料装置91，第一印刷装置92在N型单晶硅片1印刷背电极12和背电场，第二印刷装置94在N型单晶硅片1印刷正电极11、正电极主栅和细栅，印刷后经丝网印刷烧结装置95烧结成为成品电池片，烧结后经丝网印刷检测装置96和丝网印刷分选装置97剔除不合格电池片。
太阳能光伏电池低压水平磷扩散生产线还包括电注入设备，电注入设备可采用相关技术中的设备，电池片经电注入设备改善其抗衰减性能，电注入设备与丝网印刷分选装置97对接，通过电注入的方式向电池片中注入载流子以实现氢钝化。
本申请还包括利用上述太阳能光伏电池低压水平磷扩散生产线生产电池片的方法，如图2所示，该方法包括以下步骤：
步骤1、清洗制绒：将N型单晶硅片1在溶液中清洗，去除表面损伤层、切割线痕以及金属离子。
步骤2、硼扩散：将清洗过后的N型单晶硅片1放入舟中推入硼扩散工艺炉管进行硼扩散，形成硼掺杂区112。
步骤3、激光SE：将硼扩散后的N型单晶硅片1的制绒面激光局部掺杂，形成硼重掺杂区113。
步骤4、氧化：将激光SE后的N型单晶硅片1进行氧化，保护硼重掺杂区 113。
步骤5、刻蚀抛光：去除N型单晶硅片1正面表层的死层BSG，并将N型单晶硅片1背面进行化学抛光。
步骤6、LPCVD：在N型单晶硅片1表面生长氧化层和非晶硅层。
步骤7、磷扩散：经LPCVD处理后的硅片推入磷扩散设备进行多次磷扩散，在背面形成多层形成磷掺杂区122，磷扩散后进行后氧化处理，使N型单晶硅片1的背面形成附磷层。
步骤8、激光SE：将磷扩散后硅片的背面激光局部掺杂，形成磷重掺杂区123。
步骤9、氧化：将激光SE后的硅片进行氧化，保护磷重掺杂区123。
步骤10、刻蚀抛光：去除N型单晶硅片1表层的死层BSG、死层PSG和非晶硅绕镀层。
步骤11、退火：形成N型单晶硅片1背面的氧化层121。
步骤12、PECVD：PECVD炉体83对N型单晶硅片1正面进行钝化，沉积制备AlOx钝化层111和SiNx层110，以减少正面反射，增加载流子寿命，提高电流；PECVD设备8在N型单晶硅片1背面生长SiNx层120。
步骤13、丝网印刷工序：制备N型单晶硅片1表面的双面电极。
步骤14、电注入工序：电注入设备通过电注入的方式向电池片中注入载流子以实现氢钝化。
本申请提供一种太阳能光伏电池低压水平磷扩散生产线，对N型单晶硅片1依次进行制绒、硼扩散、激光SE、氧化、碱抛光、LPCVD、磷扩散、激光SE、氧化、刻蚀、退火、PECVD、丝网印刷和电注入，通过增加低压水平热处理系统和碱抛刻蚀设备极大的适配并利用PERC-SE生产线，生产线设备几乎无浪费，延长了PERC生产线生命周期；本申请在激光SE工艺后增加清洗工序以及多层磷扩散沉积方式，解决激光烧蚀磷源不够以及激光烧蚀易形成死伤层的问题；本申请将磷掺杂区结构细化分解，增加磷重掺杂区，可优化磷掺杂效果；细分出磷重掺杂区，并去除激光烧蚀区域形成死伤层，使得欧姆接触更好，电极与重掺杂区接触电阻减小，从而可以减少栅线用量，降低成本。

Claims (10)

  1. 一种太阳能光伏电池低压水平磷扩散生产线，包括：制绒设备、低压水平热处理系统、激光SE设备、低压水平氧化系统、碱抛和刻蚀设备、PECVD设备、丝网印刷设备和电注入设备；
    所述制绒设备设置为执行所述N型单晶硅片的制绒工序，所述低压水平热处理系统设置为执行所述N型单晶硅片的硼扩散工序、磷扩散工序和退火工序，所述激光SE设备设置为执行所述N型单晶硅片正面的激光局部硼掺杂以形成硼重掺杂区以及执行所述N型单晶硅片背面的激光局部磷掺杂以形成磷重掺杂区，所述低压水平氧化系统设置为执行所述N型单晶硅片的氧化工序对所述硼重掺杂区和所述磷重掺杂区进行保护，所述碱抛和刻蚀设备设置为执行所述N型单晶硅片的碱抛工序和刻蚀工序，所述PECVD设备设置为执行所述N型单晶硅片的钝化层工序、正膜工序和背膜工序，所述丝网印刷设备设置为执行所述N型单晶硅片的双面电极的制备工序以形成以电池片，所述电注入设备设置为向所述电池片注入载流子。
  2. 根据权利要求1所述的太阳能光伏电池低压水平磷扩散生产线，其中，所述制绒设备包括依次连接的制绒上料装置、制绒预清洗装置、制绒装置、制绒后清洗装置、制绒酸洗装置、制绒预脱水装置、制绒烘干装置和制绒下料装置，所述制绒上料装置设置为将所述所述N型单晶硅片经所述制绒上料装置移动至所述制绒预清洗装置进行清洗，所述制绒预清洗装置设置为去除所述N型单晶硅片表面的杂质和损伤层，所述制绒装置设置为采用碱溶液在所述N型单晶硅片的表面形成绒面。
  3. 根据权利要求2所述的太阳能光伏电池低压水平磷扩散生产线，其中，所述低压水平热处理系统包括上下料系统、搬舟净化系统和炉管系统，所述制绒设备的制绒下料装置与所述低压水平热处理系统的上下料系统对接，所述上下料系统包括上料导片组件、下料导片组件、导片流转输送机构、硅片抓取装置、上料搬运机构、下料搬运机构和舟流转机构，所述搬舟净化系统包括搬舟系统、推舟系统、净化冷却系统、传输系统和净化台框架，所述炉管系统包括炉管机架和工艺炉管，所述传输系统分别与所述舟流转机构和所述搬舟系统对接，设置为执行所述上下料系统和所述搬舟净化系统之间舟的流转，所述推舟系统与所述工艺炉管对接，设置为执行所述搬舟净化系统和所述炉管系统之间舟的流转，所述舟设置为在所述上下料系统、所述搬舟净化系统和所述炉管系统流转，所述舟内的硅片水平放置，所述工艺炉管包括低压力化学气相沉积LPCVD工艺炉管、硼扩散工艺炉管和退火工艺炉管，设置为执行所述N型单晶硅片的硼扩散工序、磷扩散工序和退火工序。
  4. 根据权利要求3所述的太阳能光伏电池低压水平磷扩散生产线，其中，所 述上料导片组件、所述下料导片组件、所述导片流转输送机构、所述上料搬运机构、所述下料搬运机构和所述舟流转机构构成所述上下料系统的导片装置，所述硅片抓取装置包括六轴机器人以及硅片抓取分合机构，所述硅片抓取分合机构设置为控制硅片的吸取和翻面，所述六轴机器人设置为通过所述硅片抓取分合机构控制硅片的移动，所述上料导片组件、所述硅片抓取装置、所述上料搬运机构和所述舟流转机构成硅片上料系统，所述下料导片组件、所述硅片抓取装置、所述下料搬运机构和所述舟流转机构构成硅片下料系统；
    所述搬舟系统、所述推舟系统和所述传输系统安装于所述净化台框架内部，所述净化冷却系统位于所述净化台框架外部，所述传输系统设置为将位于所述上下料系统装未工艺硅片的舟传输至所述搬舟系统，并将装已工艺硅片的舟传输至所述上下料系统，以执行所述搬舟系统与所述上下料系统间舟的交互，所述搬舟系统设置为将装未工艺硅片的舟移动至得到推舟系统，所述推舟系统设置为将装未工艺硅片的舟移动至所述炉管系统进行工艺，所述推舟系统还设置为将装已工艺硅片的舟移出并通过所述搬舟系统移动至所述传输系统，所述净化冷却系统设置为对所述搬舟净化系统的气体进行净化，所述舟包括舟限制板，所述硅片背对背水平放置于所述舟限制板内，所述舟限制板设置为对所述硅片的三侧进行遮挡防止绕镀。
  5. 根据权利要求3所述的太阳能光伏电池低压水平磷扩散生产线，其中，所述激光SE设备包括激光SE上料端、激光处理腔和激光下料端，所述低压水平热处理系统的上下料系统与所述激光SE设备的激光SE上料端对接，所述激光处理腔内设置有激光工艺设备，所述激光工艺设备设置为对制绒面激光开槽，对硼扩散后的所述N型单晶硅片的开槽区域进行正面激光局域掺杂，形成硼重掺杂区，以及对非制绒面激光开槽，对磷扩散后的所述N型单晶硅片的开槽区域进行正面激光局域掺杂，形成磷重掺杂区。
  6. 根据权利要求5所述的太阳能光伏电池低压水平磷扩散生产线，其中，所述低压水平氧化系统包括氧化上下料装置、氧化净化台、氧化炉体以及氧化气柜，所述激光SE设备的激光下料端与所述低压水平氧化系统的氧化上下料装置对接。
  7. 根据权利要求6所述的太阳能光伏电池低压水平磷扩散生产线，其中，所述碱抛和刻蚀设备包括碱抛和刻蚀上料装置、碱抛和刻蚀保护装置、碱抛和刻蚀执行装置、碱抛和刻蚀碱洗装置、碱抛和刻蚀酸洗装置和碱抛和刻蚀下料装置，所述低压水平氧化系统的氧化上下料装置与所述碱抛和刻蚀设备的碱抛和刻蚀上料装置对接，所述碱抛和刻蚀设备对N型单晶硅片进行清洗和刻蚀。
  8. 根据权利要求5所述的太阳能光伏电池低压水平磷扩散生产线，还包括磷 扩散设备；所述磷扩散设备包括磷扩散上下料系统、磷扩散净化台、磷扩散炉体柜、磷扩散气柜和磷扩散磷源柜，所述低压水平热处理系统的上下料系统与所述磷扩散设备的磷扩散上下料系统对接，所述磷扩散设备的磷扩散上下料系统与所述激光SE设备的激光SE上料端对接，所述磷扩散设备设置为对所述N型单晶硅片的背面进行多次磷扩散，以在所述N型单晶硅片的背面形成多层磷掺杂区，并进行后氧化处理，使所述N型单晶硅片的背面形成附磷层。
  9. 根据权利要求3所述的太阳能光伏电池低压水平磷扩散生产线，其中，所述PECVD设备包括PECVD上下料装置、PECVD净化台、PECVD炉体、PECVD气柜和PECVD真空泵，所述低压水平热处理系统的上下料系统与所述PECVD上下料装置对接，所述PECVD炉体设置为对经退火处理的所述N型单晶硅片正面进行钝化，沉积制备AlOx钝化层和SiNx层，以在所述N型单晶硅片背面生长SiNx层。
  10. 根据权利要求9所述的太阳能光伏电池低压水平磷扩散生产线，其中，所述丝网印刷设备包括丝网印刷上料装置、第一印刷装置、丝网印刷烘干装置、第二印刷装置、丝网印刷烧结装置、丝网印刷检测装置和丝网印刷分选装置，所述PECVD设备的PECVD上下料装置与所述丝网印刷上料装置对接，所述PECVD设备还设置为将经所述PECVD设备处理的所述N型单晶硅片输送至所述丝网印刷上料装置，所述第一印刷装置设置为在所述N型单晶硅片印刷背电极和背电场，所述第二印刷装置设置为在所述N型单晶硅片印刷正电极、正电极主栅和细栅，所述丝网印刷烧结装置设置为将印刷后的所述N型单晶硅片烧结成为成品电池片，所述经丝网印刷检测装置和所述丝网印刷分选装置设置为剔除不合格的电池片，所述电注入设备与所述丝网印刷分选装置对接。
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