CN103560179B - 具有se功能的水平辊道式连续扩散设备 - Google Patents
具有se功能的水平辊道式连续扩散设备 Download PDFInfo
- Publication number
- CN103560179B CN103560179B CN201310576844.6A CN201310576844A CN103560179B CN 103560179 B CN103560179 B CN 103560179B CN 201310576844 A CN201310576844 A CN 201310576844A CN 103560179 B CN103560179 B CN 103560179B
- Authority
- CN
- China
- Prior art keywords
- diffused
- thing
- coating
- region
- facilities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 72
- 239000011248 coating agent Substances 0.000 claims abstract description 37
- 238000000576 coating method Methods 0.000 claims abstract description 37
- 239000002019 doping agent Substances 0.000 claims abstract description 25
- 238000002360 preparation method Methods 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 25
- 238000005507 spraying Methods 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 21
- 238000007650 screen-printing Methods 0.000 claims description 21
- 239000007921 spray Substances 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 230000003749 cleanliness Effects 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 12
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002002 slurry Substances 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 210000001331 nose Anatomy 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 229920002472 Starch Polymers 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007581 slurry coating method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310576844.6A CN103560179B (zh) | 2013-11-18 | 2013-11-18 | 具有se功能的水平辊道式连续扩散设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310576844.6A CN103560179B (zh) | 2013-11-18 | 2013-11-18 | 具有se功能的水平辊道式连续扩散设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103560179A CN103560179A (zh) | 2014-02-05 |
CN103560179B true CN103560179B (zh) | 2015-10-28 |
Family
ID=50014386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310576844.6A Active CN103560179B (zh) | 2013-11-18 | 2013-11-18 | 具有se功能的水平辊道式连续扩散设备 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103560179B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108447949B (zh) * | 2018-05-18 | 2024-01-26 | 常州亿晶光电科技有限公司 | 一种链式扩散工艺及链式扩散设备 |
CN109360802A (zh) * | 2018-12-13 | 2019-02-19 | 杭州海莱德智能科技有限公司 | 一种平铺式扩散装置 |
CN112582498A (zh) * | 2019-09-30 | 2021-03-30 | 中国电子科技集团公司第四十八研究所 | 一种连续式生产晶体硅太阳能电池的方法 |
CN111564401A (zh) * | 2020-06-04 | 2020-08-21 | 捷捷半导体有限公司 | 一种pn结扩散或钝化用单峰高温的加热炉及应用 |
CN214487627U (zh) * | 2021-03-19 | 2021-10-26 | 常州时创能源股份有限公司 | 一种扩散装置 |
CN114203856B (zh) * | 2021-11-26 | 2022-09-06 | 深圳市拉普拉斯能源技术有限公司 | 一种太阳能光伏电池低压水平磷扩散生产线 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6288366B1 (en) * | 1998-12-17 | 2001-09-11 | Otb Group B.V. | Furnace for the production of solar cells |
CN101800261A (zh) * | 2009-02-05 | 2010-08-11 | Snt能源技术有限公司 | 制备太阳能电池上的选择性发射极的方法及其中使用的扩散设备 |
CN102332492A (zh) * | 2011-08-30 | 2012-01-25 | 绿华能源科技(杭州)有限公司 | 一种选择性发射极太阳能电池的制备方法 |
CN102356458A (zh) * | 2009-04-16 | 2012-02-15 | Tp太阳能公司 | 利用极低质量运送系统的扩散炉及晶圆快速扩散加工处理的方法 |
CN103224152A (zh) * | 2013-04-27 | 2013-07-31 | 朱光波 | 传输及输送气浮装置 |
CN203607443U (zh) * | 2013-11-18 | 2014-05-21 | 北京金晟阳光科技有限公司 | 具有se功能的水平辊道式连续扩散设备 |
-
2013
- 2013-11-18 CN CN201310576844.6A patent/CN103560179B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6288366B1 (en) * | 1998-12-17 | 2001-09-11 | Otb Group B.V. | Furnace for the production of solar cells |
CN101800261A (zh) * | 2009-02-05 | 2010-08-11 | Snt能源技术有限公司 | 制备太阳能电池上的选择性发射极的方法及其中使用的扩散设备 |
CN102356458A (zh) * | 2009-04-16 | 2012-02-15 | Tp太阳能公司 | 利用极低质量运送系统的扩散炉及晶圆快速扩散加工处理的方法 |
CN102332492A (zh) * | 2011-08-30 | 2012-01-25 | 绿华能源科技(杭州)有限公司 | 一种选择性发射极太阳能电池的制备方法 |
CN103224152A (zh) * | 2013-04-27 | 2013-07-31 | 朱光波 | 传输及输送气浮装置 |
CN203607443U (zh) * | 2013-11-18 | 2014-05-21 | 北京金晟阳光科技有限公司 | 具有se功能的水平辊道式连续扩散设备 |
Also Published As
Publication number | Publication date |
---|---|
CN103560179A (zh) | 2014-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103560179B (zh) | 具有se功能的水平辊道式连续扩散设备 | |
CN102005502B (zh) | 一种改善太阳能电池磷扩散均匀性的方法 | |
US8236596B2 (en) | Diffusion furnaces employing ultra low mass transport systems and methods of wafer rapid diffusion processing | |
CN102820383B (zh) | 多晶硅太阳能电池扩散方法 | |
US8829396B2 (en) | Finger drives for IR wafer processing equipment conveyors and lateral differential temperature profile methods | |
CN103560178B (zh) | Pn结和se掺杂一次完成的扩散方法 | |
CN202329094U (zh) | 一种辊道式太阳电池硅片烧结炉 | |
CN103557701B (zh) | 气浮辊道式半导体器件热处理炉 | |
CN102393139A (zh) | 一种辊道式太阳电池硅片烧结炉 | |
CN203607443U (zh) | 具有se功能的水平辊道式连续扩散设备 | |
CN209199965U (zh) | 一种晶硅太阳能电池生产用负压湿氧扩散装置 | |
CN103137529A (zh) | 半导体晶片的热处理方法、太阳能电池的制造方法及热处理装置 | |
CN102538453B (zh) | 具有高反射率加热区段的快速热焙烧红外线传送带式热处理炉 | |
CN212725343U (zh) | 一种硅片链式扩散氧化两用设备 | |
CN212800603U (zh) | 一种进气管及扩散炉 | |
CN111735299A (zh) | 一种用于太阳能电池生产的固化钝化一体炉 | |
CN107126834A (zh) | 一种烟气脱硝系统及脱硝方法 | |
CN104662642B (zh) | 掺杂半导体衬底的方法 | |
CN207025075U (zh) | 一种烟气脱硝系统 | |
CN102767826B (zh) | 辊道窑助燃风自动调节装置 | |
CN212339925U (zh) | 一种用于太阳能电池生产的固化钝化一体炉 | |
CN211734532U (zh) | 一种高产能晶硅太阳能电池扩散炉 | |
CN102509746B (zh) | 晶体硅太阳能电池的扩散工艺 | |
CN205241740U (zh) | 一种铸链板式调质生产线 | |
CN207963476U (zh) | 一种基于隔断式传输装置的晶硅太阳能电池片烧结炉 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
C41 | Transfer of patent application or patent right or utility model | ||
GR01 | Patent grant | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150928 Address after: 100102 Beijing City, Chaoyang District Lize in garden of Wangjing science and Technology Park E block 403B Applicant after: BEIJING JINSHENG YANGGUANG TECHNOLOGY Co.,Ltd. Applicant after: LAIWU SOLARRAY PRECISION EQUIPMENT CO.,LTD. Address before: 100102 Beijing City, Chaoyang District Lize in garden of Wangjing science and Technology Park E block 403B Applicant before: BEIJING JINSHENG YANGGUANG TECHNOLOGY Co.,Ltd. Applicant before: Yuan Xiangdong Applicant before: Xu Ying |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 100102 Beijing City, Chaoyang District Lize in garden of Wangjing science and Technology Park E block 403B Co-patentee after: Shandong Jinsheng Photovoltaic Equipment Co.,Ltd. Patentee after: BEIJING JINSHENG YANGGUANG TECHNOLOGY Co.,Ltd. Address before: 100102 Beijing City, Chaoyang District Lize in garden of Wangjing science and Technology Park E block 403B Co-patentee before: LAIWU SOLARRAY PRECISION EQUIPMENT CO.,LTD. Patentee before: BEIJING JINSHENG YANGGUANG TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 271100 8th Floor of Enterprise Service Center, Laiwu High-tech Zone, Jinan City, Shandong Province Co-patentee after: BEIJING JINSHENG YANGGUANG TECHNOLOGY Co.,Ltd. Patentee after: Shandong Jinsheng Photovoltaic Equipment Co.,Ltd. Address before: 100102 Beijing City, Chaoyang District Lize in garden of Wangjing science and Technology Park E block 403B Co-patentee before: Shandong Jinsheng Photovoltaic Equipment Co.,Ltd. Patentee before: BEIJING JINSHENG YANGGUANG TECHNOLOGY Co.,Ltd. |