WO2023085026A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2023085026A1
WO2023085026A1 PCT/JP2022/038987 JP2022038987W WO2023085026A1 WO 2023085026 A1 WO2023085026 A1 WO 2023085026A1 JP 2022038987 W JP2022038987 W JP 2022038987W WO 2023085026 A1 WO2023085026 A1 WO 2023085026A1
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Prior art keywords
resistors
resistor
real
circuit
region
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Ceased
Application number
PCT/JP2022/038987
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English (en)
French (fr)
Japanese (ja)
Inventor
恵治 和田
和真 西尾
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to DE112022004933.2T priority Critical patent/DE112022004933T5/de
Priority to CN202280074970.9A priority patent/CN118235246A/zh
Priority to JP2023559519A priority patent/JPWO2023085026A1/ja
Publication of WO2023085026A1 publication Critical patent/WO2023085026A1/ja
Priority to US18/658,632 priority patent/US20240296980A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C13/00—Resistors not provided for elsewhere
    • H01C13/02—Structural combinations of resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements

Definitions

  • the present disclosure relates to semiconductor devices.
  • a battery with a high output voltage is used as a vehicle drive battery installed in a hybrid vehicle or an electric vehicle. Then, the output voltage of the vehicle drive battery is stepped up and supplied to the motor drive circuit. Therefore, such vehicles are provided with a voltage monitoring device (high voltage monitor) for monitoring the high voltage supplied to the motor drive circuit.
  • a voltage monitoring device high voltage monitor
  • Patent Document 1 discloses a voltage monitoring device comprising a first chip that steps down a high voltage signal and a second chip that processes the signal stepped down by the first chip. Although Patent Document 1 discloses a circuit diagram of a resistance circuit of the first chip, it does not disclose a specific arrangement of a plurality of resistance elements in the first chip.
  • Patent Document 2 discloses the structure of one resistance element in the first chip, but does not disclose the specific arrangement of a plurality of resistance elements in the first chip.
  • An object of the present disclosure is to provide a semiconductor device capable of reducing voltage detection errors based on process variations.
  • An embodiment of the present disclosure includes: a first resistance circuit electrically connected to a positive electrode of a high voltage generator; a second resistance circuit connected in series with the first resistance circuit; a connected third resistor circuit; and a fourth resistor circuit connected in series with the third resistor circuit and electrically connected to the negative electrode of the high voltage generating section, wherein the first resistor circuit wherein the second resistor circuit includes a plurality of first resistors extending in a first direction and spaced apart in a second direction orthogonal to the first direction, wherein the second resistor circuit extends in the first direction.
  • the third resistor circuit comprises one second resistor extending in the first direction; a third resistor or a plurality of third resistors extending in the first direction and spaced apart in the second direction, wherein the fourth resistor circuit extends in the first direction and extends in the second direction; a plurality of fourth resistors spaced apart in a direction, wherein the second resistor is between two first resistors adjacent in the second direction among the plurality of first resistors wherein the third resistor is arranged between two fourth resistors adjacent in the second direction among the plurality of fourth resistors
  • a semiconductor device is provided that includes one or more intermediate third resistors.
  • FIG. 1 is an illustrative plan view showing a semiconductor device according to one embodiment of the invention.
  • FIG. 2 is a schematic diagram mainly showing a schematic electrical configuration of the first chip and a schematic electrical configuration of the second chip.
  • FIG. 3 is a schematic plan view of the first chip. 4 is a cross-sectional view taken along line IV--IV of FIG. 3.
  • FIG. 5 is a cross-sectional view showing a connection structure of resistors in FIG.
  • FIG. 6 is an illustrative plan view for explaining a comparative example of the first chip.
  • FIG. 7 is a partial plan view showing a modification of the dummy resistor rb arranged between the second resistor circuit and the adjacent real resistor ra of the first resistor circuit.
  • FIG. 8 is an illustrative plan view for explaining a modification of the first chip.
  • An embodiment of the present disclosure includes: a first resistance circuit electrically connected to a positive electrode of a high voltage generator; a second resistance circuit connected in series with the first resistance circuit; a connected third resistor circuit; and a fourth resistor circuit connected in series with the third resistor circuit and electrically connected to the negative electrode of the high voltage generating section, wherein the first resistor circuit wherein the second resistor circuit includes a plurality of first resistors extending in a first direction and spaced apart in a second direction orthogonal to the first direction, wherein the second resistor circuit extends in the first direction.
  • the third resistor circuit comprises one second resistor extending in the first direction; a third resistor or a plurality of third resistors extending in the first direction and spaced apart in the second direction, wherein the fourth resistor circuit extends in the first direction and extends in the second direction; a plurality of fourth resistors spaced apart in a direction, wherein the second resistor is between two first resistors adjacent in the second direction among the plurality of first resistors wherein the third resistor is arranged between two fourth resistors adjacent in the second direction among the plurality of fourth resistors
  • a semiconductor device is provided that includes one or more intermediate third resistors.
  • the resistance values of the first resistor, the second resistor, the third resistor and the fourth resistor are equal.
  • the ratio of the resistance value of the second resistance circuit to the resistance value of the first resistance circuit is equal to the ratio of the resistance value of the third resistance circuit to the resistance value of the fourth resistance circuit .
  • the resistance values of the first resistor, the second resistor, the third resistor, the fourth resistor, the first dummy resistor, and the second dummy resistor are equal. .
  • the first resistor circuit includes two or more rows of the first resistors extending in the first direction and spaced apart in the second direction.
  • the fourth resistor circuit includes a predetermined number of columns, and the fourth resistor circuit includes a predetermined number of columns of the plurality of fourth resistors extending in the first direction and spaced apart in the second direction.
  • the second resistor circuit includes one or a plurality of second resistors arranged corresponding to each column of the first resistors, and the third resistor circuit is provided for each column of the fourth resistors One or more third resistors are correspondingly arranged.
  • all first resistors forming the first resistor circuit are connected in series, and all fourth resistors forming the fourth resistor circuit are connected in series.
  • the second resistor circuit includes at least four or more second resistors
  • the third resistor circuit includes at least four or more third resistors
  • the second resistor circuit comprises , a plurality of first parallel circuits in which two or more of the second resistors are connected in parallel
  • the third resistor circuit includes a plurality of first parallel circuits in which two or more of the third resistors are connected in parallel. It includes two parallel circuits, wherein the plurality of first parallel circuits are connected in series and the plurality of second parallel circuits are connected in series.
  • a voltage corresponding to a voltage between a connection point between the first resistance circuit and the second resistance circuit and a connection point between the third resistance circuit and the fourth resistance circuit is Includes a voltage detector to measure.
  • FIG. 1 is a schematic plan view showing a semiconductor device according to one embodiment of the invention.
  • FIG. 2 is a schematic diagram mainly showing a schematic electrical configuration of the first chip and a schematic electrical configuration of the second chip.
  • the +X direction is a predetermined direction along the surface of the semiconductor device 1 in plan view
  • the +Y direction is a direction along the surface of the semiconductor device 1 in plan view and perpendicular to the +X direction.
  • the ⁇ X direction is the direction opposite to the +X direction
  • the ⁇ Y direction is the direction opposite to the +Y direction.
  • the +X direction and the -X direction are collectively referred to simply as the "X direction”. When collectively referring to the +Y direction and the -Y direction, it is simply referred to as the "Y direction".
  • a semiconductor device 1 includes a first lead 2, a first frame 3, a second frame 4, a first chip 5 fixed on the first frame 3, and a second chip fixed on the second frame 4. 6, second to seventh leads 7 to 12 connected to the second chip 6, wirings 31 to 42, and a sealing resin 13 for sealing them.
  • the first frame 3 includes a rectangular main body portion 3A elongated in the Y direction in plan view, and a lead portion 3B extending in the -X direction from the -Y side end of the -X side edge of the main body portion 3A.
  • the first lead 2 is arranged with a space on the -X side with respect to the +Y side end of the -X side edge of the main body portion 3A of the first frame 3 .
  • the second frame 4 is spaced apart on the +X side with respect to the body portion 3A of the first frame 3 in plan view.
  • the second frame 4 has a rectangular shape elongated in the Y direction in plan view.
  • the second to seventh leads 7 to 12 are spaced apart on the +X side with respect to the second frame 4 in plan view.
  • the second to seventh leads 7 to 12 are spaced apart in the Y direction in plan view.
  • the first lead 2, the lead portion 3B and the second to seventh leads 7 to 12 are partially exposed from the sealing resin 13 (for example, lower surfaces and outer end surfaces).
  • the first chip 5 includes a plurality of terminals P1-P6.
  • the terminal P1 is connected to the first lead 2 via the wiring 31 .
  • the terminal P2 is connected through the wiring 32 to the lead portion 3B.
  • a positive electrode of the high voltage generator 101 is connected to the first lead 2 .
  • the negative electrode of the high voltage generating section 101 is connected to the lead section 3B.
  • the first chip 5 includes first to fourth resistor circuits 21 to 24 for stepping down the high voltage of the high voltage generator 101 (see FIG. 1).
  • the first to fourth resistance circuits 21-24 are connected in series.
  • One end of the first resistance circuit 21 is connected to the terminal P1.
  • the other end of the first resistance circuit 21 is connected to one end of the second resistance circuit 22 .
  • a connection point between the first resistance circuit 21 and the second resistance circuit 22 is connected to the terminal P3.
  • the other end of the second resistance circuit 22 is connected to the terminal P4.
  • One end of the third resistance circuit 23 is connected to the terminal P5.
  • the other end of the third resistance circuit 23 is connected to one end of the fourth resistance circuit 24 .
  • a connection point between the third resistor circuit 23 and the fourth resistor circuit 24 is connected to the terminal P6.
  • the other end of the fourth resistance circuit 24 is connected to the terminal P2.
  • the terminal P4 and the terminal P5 are connected to each other by wiring via the second chip 6, as will be described later. That is, the other end of the second resistance circuit 22 and one end of the third resistance circuit 23 are electrically connected.
  • the resistance value of the first resistance circuit 21 is R1
  • the resistance value of the second resistance circuit 22 is R2
  • the resistance value of the third resistance circuit 23 is R3
  • the resistance value of the fourth resistance circuit 24 is R4.
  • R2 is smaller than R1, and the ratio of R2 to R1 (R2/R1) is preset.
  • R3 is less than R4, and the ratio of R3 to R4 (R3/R4) is preset.
  • the ratio (R2/R1) and ratio (R3/R4) are set to the same predetermined value (eg, 1/999).
  • the second chip 6 includes a plurality of terminals Q1-Q10. Terminals Q1-Q4 are connected to terminals P3-P6 via wires 33-36, respectively. The terminals Q5-Q10 are connected to the second to seventh leads 7-12 via wires 37-42, respectively. The terminal Q2 and the terminal Q3 are connected by a wiring 91 within the second chip 6, as shown in FIG.
  • the second chip 6 includes a voltage detection circuit 92 connected between terminals Q1 and Q4.
  • the voltage detection circuit 92 detects a voltage corresponding to the voltage between the connection point between the first resistance circuit 21 and the second resistance circuit 22 and the connection point between the third resistance circuit 23 and the fourth resistance circuit 24.
  • Voltage detection circuit 92 includes an operational amplifier. Terminals Q5 to Q10 (second to seventh leads 7 to 12) are used to supply power supply voltage to operational amplifiers in second chip 6 and to output the output signal of voltage detection circuit 92.
  • FIG. 3 is a schematic plan view of the first chip 5.
  • resistor r In the first chip 5, rows of unit resistors r (hereinafter referred to as “resistors r”) extending in the X direction and arranged at intervals in the Y direction are arranged in the X direction in plan view. are provided in two rows with an interval between them.
  • the plurality of resistors r includes real resistors ra that are used as components of any of the resistor circuits 21-24 and dummy resistors rb that are not used as components of any of the resistor circuits 21-24. In FIG. 3, the dummy resistor rb is hatched with dots for clarity.
  • the column on the -X side is called the first column
  • the column on the +X side is called the second column.
  • the plurality of resistors r in the first row and the plurality of resistors r in the second row are arranged at predetermined pitch intervals in the Y direction.
  • the pair of resistors r closest to the +Y side and adjacent in the X direction are dummy resistors rb (hereinafter referred to as "+Y side dummy resistors rb").
  • a pair of resistors r located closest to the -Y side and adjacent in the X direction are dummy resistors rb (hereinafter referred to as "-Y side dummy resistors rb").
  • the region between the +Y side dummy resistor rb and the ⁇ Y side dummy resistor rb is divided into 11 regions E1 to E11 in the Y direction in order to form the first to fourth resistor circuits 21 to 24, etc. It is These areas E1 to E11 include areas of the same size and areas of different sizes.
  • These areas E1 to E11 are respectively referred to as a first area E1, a second area E2, ..., a tenth area E10 and an eleventh area E11 from the +Y direction side.
  • the sixth region E6 is arranged in the Y-direction center of the region between the +Y side dummy resistor rb and the ⁇ Y side dummy resistor rb.
  • the sizes of the first area E1, the fifth area E5, the seventh area E7 and the eleventh area E11 are almost equal and larger than the other areas E2, E3, E4, E8, E9 and E10.
  • the sizes of the third region E3 and the ninth region E9 are substantially equal.
  • the sizes of the second area E2, the fourth area E4, the eighth area E8 and the tenth area E10 are substantially equal.
  • the sixth area 6E is the smallest among the first to eleventh areas E1 to E11.
  • a plurality of resistors r included in each of the first region E1, third region E3, fifth region E5, seventh region E7, ninth region E9 and eleventh region E11 are real resistors ra.
  • a plurality of resistors r included in each of the second region E2, fourth region E4, sixth region 6E, eighth region E8 and tenth region E10 are dummy resistors rb.
  • the first resistance circuit 21 includes a plurality of real resistors ra within the first region E1 and a plurality of real resistors ra within the fifth region E5.
  • the first resistor circuit 21 consists of a series circuit of all real resistors ra in these regions E1 and E5.
  • two real resistors ra adjacent in the X direction are electrically connected to each other at their inner ends.
  • the -X-side ends of the real resistors ra in the odd-numbered (odd-numbered) rows from the +Y-side end are the even-numbered (even-numbered) is connected to the -X side end of the real resistor ra.
  • the +X-side end of the even-numbered real resistor ra from the +Y-side end is the +X-side end of the odd-numbered real resistor ra adjacent to the -Y side. connected to the
  • two real resistors ra adjacent in the X direction are electrically connected to each other at their inner ends.
  • the -X side end of the even-numbered real resistor ra from the +Y-side end is -X of the odd-numbered real resistor ra adjacent to the -Y side. connected to the side ends.
  • the +X-side end of the odd-numbered real resistor ra from the +Y-side end is the +X-side end of the even-numbered real resistor ra adjacent to the -Y side. connected to the
  • the -X side end of the real resistor ra at the -Y side end of the first column in the region E1 is connected to the -X side end of the real resistor ra at the +Y side end of the first column in the region E5. 51 are electrically connected. As a result, all the real resistors ra within the regions E1 and E5 are connected in series.
  • the +X side end of the real resistor ra on the +Y side of the second column in the region E1 is connected to the terminal P1 via the wiring 52 .
  • the +X side end of the real resistor ra on the -Y side of the second column in the region E5 is connected to the terminal P3 via the wiring 53 .
  • the second resistor circuit 22 includes a plurality of real resistors ra within the third region E3.
  • the second resistor circuit 22 includes a parallel circuit of a plurality (three in the example of FIG. 3) of the first column in the third region E3 and a plurality of second columns in the third region E3 (three in the example of FIG. 3). In example 3, it consists of a series circuit with a parallel circuit of 3 real resistors ra.
  • the ⁇ X side ends of the plurality of real resistors ra in the first row in the third region E3 are electrically connected to each other, and the +X side ends of these real resistors ra are connected to each other. are electrically connected.
  • the ⁇ X side ends of the plurality of real resistors ra in the second row in the third region E3 are electrically connected to each other, and the +X side ends of these real resistors ra are electrically connected to each other. It is
  • the +X side ends of the plurality of real resistors ra in the first row in the third region E3 are electrically connected to the -X side ends of the plurality of real resistors ra in the second row in the third region E3. It is The ⁇ X side ends of the plurality of real resistors ra in the first row in the third region E3 are connected to the terminal P4 via the wiring 54. FIG. The +X side ends of the plurality of real resistors ra in the second row in the third region E3 are connected to the terminal P3 via the wiring 55 .
  • the plurality of real resistors ra in the first column in the second resistor circuit 22 are the real resistors ra in the -Y side end of the first column in the first region E1 and the real resistors ra in the first column in the fifth region E5. It is arranged between the real resistor ra on the +Y side end. That is, the plurality of real resistors ra in the first row in the second resistance circuit 22 are two real resistors adjacent in the Y direction among the plurality of real resistors ra in the first row in the first resistance circuit 21. It is arranged between ra.
  • the plurality of real resistors ra in the second column in the second resistor circuit 22 are the real resistors ra in the -Y side end of the second column in the first region E1 and the real resistors ra in the second column in the fifth region E5. It is arranged between the real resistor ra on the +Y side end. That is, the plurality of real resistors ra in the second row in the second resistance circuit 22 are two real resistors adjacent in the Y direction among the plurality of real resistors ra in the second row in the first resistance circuit 21. It is arranged between ra. Each real resistor ra included in the second resistor circuit 22 is an example of the "intermediate second resistor" of the present disclosure.
  • the fourth resistance circuit 24 includes a plurality of real resistors ra within the seventh region E7 and a plurality of real resistors ra within the 11th region E11.
  • the fourth resistor circuit 24 consists of a series circuit of all real resistors ra within these regions E7 and E11.
  • two real resistors ra adjacent in the X direction are electrically connected to each other at their inner ends.
  • the -X side end of the odd-numbered real resistor ra from the +Y-side end is the -X side of the even-numbered real resistor ra adjacent to the -Y side. connected to the side ends.
  • the +X side end of the even-numbered real resistor ra from the +Y-side end is the +X-side end of the odd-numbered real resistor ra adjacent to the -Y side. connected to the
  • two real resistors ra adjacent in the X direction are electrically connected to each other at their inner ends.
  • the -X side end of the even-numbered real resistor ra from the +Y-side end is -X of the odd-numbered real resistor ra adjacent to the -Y side. connected to the side ends.
  • the +X-side end of the odd-numbered real resistor ra from the +Y-side end is the +X-side end of the even-numbered real resistor ra adjacent to the -Y side. connected to the
  • the -X side end of the real resistor ra at the -Y side end of the first column in the region E7 is connected to the -X side end of the real resistor ra at the +Y side end of the first column in the region E11. 56 are electrically connected. As a result, all the real resistors ra within the regions E7 and E11 are connected in series.
  • the +X side end of the real resistor ra on the +Y side of the second column in the region E7 is connected to the terminal P6 via the wiring 57 .
  • the +X-side end of the real resistor ra on the -Y-side end of the second column in the region E11 is connected to the terminal P2 via the wiring 58 .
  • the third resistor circuit 23 includes a plurality of real resistors ra within the ninth region E9.
  • the third resistor circuit 23 includes a parallel circuit of a plurality of real resistors ra in the first column (three in the example of FIG. 3) in the ninth region E9 and a plurality of second columns in the ninth region E9 (in the figure In example 3, it consists of a series circuit with a parallel circuit of 3 real resistors ra.
  • the ⁇ X side ends of the plurality of real resistors ra in the first row in the ninth region E9 are electrically connected to each other, and the +X side ends of these real resistors ra are connected to each other. are electrically connected.
  • the ⁇ X side ends of the plurality of real resistors ra in the second row in the ninth region E9 are electrically connected to each other, and the +X side ends of these real resistors ra are electrically connected to each other. It is
  • the +X side ends of the plurality of real resistors ra in the first row in the ninth region E9 are electrically connected to the -X side ends of the plurality of real resistors ra in the second row in the ninth region E9. It is The ⁇ X side ends of the plurality of real resistors ra in the first column in the ninth region E9 are connected to the terminal P5 via the wiring 59. FIG. The +X side ends of the plurality of real resistors ra in the second row in the ninth region E9 are connected to the terminal P6 via the wiring 60 .
  • the plurality of real resistors ra in the first column in the third resistor circuit 23 are the real resistors ra in the -Y side end of the first column in the seventh region E7 and the real resistors ra in the first column in the eleventh region E11. It is arranged between the real resistor ra on the +Y side end. That is, the plurality of real resistors ra in the first row in the third resistance circuit 23 are two real resistors adjacent in the Y direction among the plurality of real resistors ra in the first row in the fourth resistance circuit 24. It is arranged between ra.
  • the plurality of real resistors ra in the second column in the third resistor circuit 23 are the real resistors ra in the -Y side end of the second column in the seventh region E7 and the real resistors ra in the second column in the eleventh region E11. It is arranged between the real resistor ra on the +Y side end. That is, the plurality of real resistors ra in the second row in the third resistance circuit 23 are two real resistors adjacent in the Y direction among the plurality of real resistors ra in the second row in the fourth resistance circuit 24. It is arranged between ra.
  • Each real resistor ra included in the third resistor circuit 23 is an example of the "intermediate third resistor" of the present disclosure.
  • the plurality of real resistors ra forming the second resistance circuit 22 are arranged between the real resistors ra adjacent in the Y direction among the plurality of real resistors ra forming the first resistance circuit 21. Due to the arrangement, a high voltage difference develops between the second resistor circuit 22 and the real resistor ra of the adjacent first resistor circuit 21 .
  • the plurality of real resistors ra forming the third resistor circuit 23 are arranged between the real resistors ra adjacent in the Y direction among the plurality of real resistors ra forming the fourth resistor circuit 24. Therefore, a high voltage difference is generated between the third resistor circuit 23 and the adjacent real resistor ra of the fourth resistor circuit 24 .
  • a dummy resistor rb is arranged at a location where a high voltage difference occurs in order to relax the electric field at the location where the high voltage difference occurs.
  • a plurality of dummy resistors rb are arranged in each of the second region E2, the fourth region E4, the eighth region E8 and the tenth region E10. These regions E2, E4, E8 and E10 are collectively referred to as a high voltage dummy placement region E dummy .
  • Two dummy resistors rb are arranged in the first and second columns of the high-voltage dummy placement region E dummy with the pitch in the Y direction. That is, four dummy resistors rb arranged in two columns and two rows are arranged in the withstand voltage dummy arrangement region E dummy . Each dummy resistor rb is not electrically connected to other dummy resistors rb. Further, each dummy resistor rb is not electrically connected to any real resistor ra, nor electrically connected to any of the terminals P1 to P6.
  • one dummy resistor rb is arranged in each of the first and second columns in the sixth region E6.
  • FIG. 4 is a cross-sectional view along line IV-IV in FIG.
  • FIG. 5 is a cross-sectional view showing a connection structure of resistors in FIG.
  • the first chip 5 includes a substrate 61, an insulating film laminated structure 62 formed on the substrate 61, a plurality of lower metals 63A, 63B, 63C formed on the insulating film laminated structure 62, and an insulating film laminated structure.
  • a first insulating layer 64 is formed on 62 so as to cover lower metals 63A, 63B and 63C, and a plurality of resistors 65A and 65B are formed on the first insulating layer 64 and constitute a resistor r. include.
  • the first chip 5 includes a second insulating layer 66 formed on the first insulating layer 64 so as to cover the resistors 65A and 65B, and a plurality of upper metals 67 formed on the second insulating layer 66. , and a third insulating layer 68 formed on the second insulating layer 66 to cover the upper metal 67 . Further, the first chip 5 includes a first protective film 69 formed on the third insulating layer 68 and a second protective film 70 formed on the first protective film 69 .
  • the substrate 61 is made of, for example, a Si substrate.
  • the insulating film laminated structure 62 has a structure in which a first insulating film 62A made of an SiO 2 film and a second insulating film 62B made of a SiN (Tensile SiN) film having a tensile stress are alternately laminated.
  • the number of laminations of the first insulating film 62A and the second insulating film 62B may be any number, and may differ from the number of laminations shown in FIG.
  • the two types of insulating films 62A and 62B are laminated because the warpage of the substrate 61 caused by the formation of the first insulating film 62A is controlled by the formation of the second insulating film 62B, and the insulating film is formed thickly. It is for
  • the film thickness of the first insulating film 62A is, for example, about 2 ⁇ m, and the film thickness of the second insulating film 62B is, for example, about 0.3 ⁇ m.
  • the thickness of the insulating film laminated structure 62 is, for example, about 10 ⁇ m.
  • the lower metals 63A, 63B, 63C are arranged to electrically connect the real resistors ra adjacent in the Y direction and to electrically connect the real resistors ra adjacent in the X direction. ing.
  • the lower metals 63A, 63B, 63C are a first lower metal 63A arranged closer to the -X side end, a third lower metal 63C arranged closer to the +X side end, and a third lower metal 63C arranged closer to the +X side end. It includes a second lower metal 63B disposed between one lower metal 63A and a third lower metal 63C.
  • the lower metals 63A, 63B, 63C are made of Al (aluminum), for example.
  • the first insulating layer 64 is made of, for example, a SiO2 layer.
  • the resistors 65A and 65B are arranged so as to straddle the first lower metal 63A and the second lower metal 63B in plan view, the second lower metal 63B and the third lower metal 63B. and a second resistor 65B arranged so as to straddle the side metal 63C.
  • the first resistor 65A constitutes the first row of resistors r
  • the second resistor 65B constitutes the second row of resistors r.
  • the resistors 65A and 65B are made of CrSi, for example.
  • the ⁇ X side end of the lower surface of the first resistor 64A is electrically connected to the first lower metal 63A through the first via 81 penetrating the first insulating layer 64. As shown in FIG. The +X side end of the lower surface of the first resistor 64A is electrically connected to the second lower metal 63B via a second via 82 penetrating through the first insulating layer 64 .
  • the ⁇ X side end of the lower surface of the second resistor 64B is electrically connected to the second lower metal 63B via a third via 83 penetrating through the first insulating layer 64 .
  • the +X side end of the lower surface of the second resistor 64B is electrically connected to the third lower metal 63C via a fourth via 84 penetrating through the first insulating layer 64 .
  • the second insulating layer 66 is made of, for example, a SiO2 layer.
  • the plurality of upper metals 67 are for connecting a predetermined real resistor ra to predetermined terminals P3 to P6, or for connecting two predetermined real resistors ra that are not connected by the lower metals 63A to 63C. Acts as a pad.
  • the upper metal 67 is arranged so as to partially overlap the +X side end of the third lower metal 63C in plan view.
  • the upper metal 67 is electrically connected to the third lower metal 63C through a fifth via 85 that continuously penetrates the second insulating layer 66 and the first insulating layer 64 .
  • the upper metal 67 shown in FIG. 4 is connected to the terminal P1 via the wiring 52 (see FIG. 3).
  • the third insulating layer 68 is made of, for example, a SiO2 layer.
  • a pad opening 68 a is formed in the third insulating layer 68 to expose a portion of the surface of the upper metal 67 .
  • the first protective film 69 is made of, for example, a SiN film. An opening 69a communicating with the pad opening 68a is formed in the first protective film 69 .
  • the second protective film 70 is made of, for example, a polyimide film. The second protective film 70 has an opening 70a communicating with the openings 69a and 68a.
  • FIG. 6 shows a comparative example 105 of the first chip 5.
  • FIG. 6 parts corresponding to those in FIG. 3 are denoted by the same reference numerals as those in FIG.
  • a region between the +X side dummy resistor rb and the ⁇ X side dummy resistor rb is divided into four regions e1 to e4 in the Y direction in order to form the first to fourth resistor circuits 21 to 24 and the like. It is These regions e1 to e4 are referred to as a first region e1, a second region e2, a third region e3 and a fourth region e4 from the +Y direction side.
  • the sizes of the first region e1 and the fourth region e4 are approximately equal and larger than the other regions e2 and e3.
  • the size of the second area e2 and the size of the third area e3 are almost equal.
  • a plurality of resistors r included in each of the first region e1, the second region e2, the third region e3, and the fourth region e4 are real resistors ra.
  • the first resistor circuit 21 consists of a series circuit of all real resistors ra in the first region e1.
  • the second resistor circuit 22 is a series circuit of a parallel circuit of a plurality of real resistors ra in the first row in the second region e2 and a parallel circuit of a plurality of real resistors ra in the second row in the second region e2.
  • the third resistor circuit 23 is a series circuit of a parallel circuit of a plurality of real resistors ra in the first row in the third region e3 and a parallel circuit of a plurality of real resistors ra in the second row in the third region e3. consists of a circuit.
  • the fourth resistor circuit 24 consists of a series circuit of all the real resistors ra in the fourth region e4.
  • the real resistor group forming the second resistor circuit 22 is arranged on the -Y side of the real resistor group forming the first resistor circuit 21 . Further, the real resistor group forming the third resistor circuit 23 is arranged on the +Y side of the real resistor group forming the fourth resistor circuit 24 .
  • the resistance characteristics of the resistor r may vary due to process variations. Process variations tend to be gradual along one direction, eg, the ⁇ Y direction or the +Y direction.
  • the real resistor group forming the first resistor circuit 21 and the real resistor group forming the second resistor circuit 22 are arranged side by side in one direction (Y direction). Therefore, the resistance characteristics of the real resistor ra in the first resistor circuit 21 and the resistance characteristics of the real resistor ra in the second resistor circuit 22 are likely to differ. As a result, an error is likely to occur in the ratio (R2/R1) of the resistance value R2 of the second resistance circuit 22 to the resistance value R1 of the first resistance circuit 21 .
  • the second resistor circuit 22 when the second resistor circuit 22 is arranged as in this embodiment, a high voltage is applied between the second resistor circuit 22 and the real resistor ra of the adjacent first resistor circuit 21 . difference occurs. Further, when the third resistor circuit 23 is arranged as in this embodiment, a high voltage difference occurs between the third resistor circuit 23 and the actual resistor ra of the fourth resistor circuit 24 adjacent thereto. do. However, in this embodiment, since the dummy resistor rb is arranged at the location where the high voltage difference occurs, the electric field at the location where the high voltage difference occurs can be relaxed.
  • the present disclosure can also be implemented in other forms.
  • two dummy resistors ra rb are arranged at predetermined pitch intervals in the Y direction.
  • three or more dummy resistors rb may be arranged at predetermined pitch intervals. The same applies to the dummy resistor rb arranged between the third resistor circuit 23 and the real resistor ra of the fourth resistor circuit 24 adjacent thereto.
  • a plurality of dummy resistors are provided for each of the first and second columns.
  • the bodies rb may be arranged at a predetermined pitch interval, some of them may be arranged at intervals wider than the predetermined pitch interval.
  • four dummy resistors rb are arranged at intervals in the Y direction in each column of the second region E2.
  • the third dummy resistor rb from the end is arranged with an interval wider than a predetermined pitch interval.
  • four dummy resistors rb are arranged at intervals in the Y direction in each column of the fourth region E4.
  • the third dummy resistor rb is arranged with an interval wider than a predetermined pitch interval. The same applies to the dummy resistor rb arranged between the third resistor circuit 23 and the real resistor ra of the fourth resistor circuit 24 adjacent thereto.
  • a space having a width larger than a predetermined pitch interval may be formed. Also between the third resistor circuit 23 and the adjacent real resistor ra of the fourth resistor circuit 24, a space larger than the predetermined pitch interval is simply formed without arranging the dummy resistor rb.
  • all the real resistors ra forming the second resistor circuit 22 are arranged between two predetermined real resistors ra adjacent in the Y direction in the first resistor circuit 21 .
  • at least some of the real resistors ra among the plurality of real resistors ra forming the second resistor circuit 22 are arranged between two real resistors ra adjacent in the Y direction in the first resistor circuit 21. It is good if it is.
  • a part of the plurality of real resistors ra forming the second resistor circuit 22 is arranged between two predetermined real resistors ra adjacent in the Y direction in the first resistor circuit 21, and the second resistor circuit Another part of the plurality of real resistors ra forming 22 may be arranged between two other real resistors ra adjacent in the Y direction in the first resistor circuit 21 .
  • the first chip 5 has rows of resistors r extending in the X direction and spaced in the Y direction in plan view. are provided for two rows. However, three or more such rows may be provided at intervals in the X direction, or only one row may be provided.
  • FIG. 8 is a schematic plan view for explaining a modification of the first chip.
  • the parts corresponding to the parts in FIG. 3 are given the same reference numerals as in FIG.
  • each real resistor ra is arranged at intervals in the Y direction in the first and second rows in the third region E3.
  • the four real resistors ra arranged in the second row in the third region E3 are the real resistors ra used as resistors of the second resistor circuit 22, as in FIG.
  • the four real resistors ra arranged in the first row in the third region E3 are real resistors ra that are used as resistors of the first resistor circuit 21, unlike in FIG.
  • two dummy resistors rb are arranged in each of the first row and the second row in the second region E2, but in the first chip 5A of FIG.
  • Two real resistors ra are arranged in the first row in the region E2.
  • two dummy resistors rb are arranged in each of the first and second columns in the fourth region E4, but in the first chip 5A of FIG. , two real resistors ra are arranged in the first row in the fourth region E4.
  • the first resistor circuit 21 includes a plurality of real resistors ra in the first region E1, two real resistors ra in the first column in the second region E2, and a third It consists of a plurality of real resistors ra in the first row in the region E3, two real resistors ra in the first row in the fourth region E4, and a plurality of real resistors ra in the fifth region E5.
  • the first resistor circuit 21 includes the first region E1, the first column in the second region E2, the first column in the third region E3, the first column in the second region E2, and the fifth region E5. consists of a series circuit of real resistors ra.
  • two real resistors ra adjacent in the X direction are electrically connected to each other at their inner ends.
  • the -X side end of the odd-numbered real resistor ra from the +Y-side end is the -X side of the even-numbered real resistor ra adjacent to the -Y side. connected to the side ends.
  • the +X-side end of the even-numbered real resistor ra from the +Y-side end is the +X-side end of the odd-numbered real resistor ra adjacent to the -Y side. connected to the
  • the area obtained by integrating the area E2 is a first integrated area
  • the -X side end of the real resistor ra in the even row from the +Y side end are connected to the -X side ends of the odd-numbered real resistors ra adjacent to the -Y side thereof.
  • the +X-side ends of the odd-numbered real resistors ra from the +Y-side end are respectively adjacent to the -Y-side even-numbered real resistors ra is connected to the +X side end of the .
  • two real resistors ra adjacent in the X direction are electrically connected to each other at their inner ends.
  • the -X side end of the even-numbered real resistor ra from the +Y-side end is -X of the odd-numbered real resistor ra adjacent to the -Y side. connected to the side ends.
  • the +X-side end of the odd-numbered real resistor ra from the +Y-side end is the +X-side end of the even-numbered real resistor ra adjacent to the -Y side. connected to the
  • the -X side end of the real resistor ra at the -Y side end of the first row in the region E1 is connected to the -X side end of the real resistor ra at the +Y side end of the first row in the first integration region. It is connected.
  • the -X side end of the real resistor ra at the -Y side end of the first row in the first integrated region is connected to the -X side end of the real resistor ra at the +Y side end of the first row in the region E5. It is connected.
  • all the real resistors ra included in the region E1, the first row in the first integration region, and the region E5 are connected in series.
  • the +X-side end of the real resistor ra on the +Y-side end of the second column in the region E1 is connected to the terminal P1 via the wiring 52 .
  • the +X side end of the real resistor ra on the -Y side of the second column in the region E5 is connected to the terminal P3 via the wiring 53 .
  • the second resistor circuit 22 consists of a parallel circuit of a plurality of (four in the example of FIG. 12) real resistors ra in the second column in the third region E3.
  • the ⁇ X side ends of the plurality of real resistors ra in the second row in the third region E3 are electrically connected to each other, and the +X side ends of these real resistors ra are connected to each other. are electrically connected.
  • the ⁇ X side ends of the plurality of real resistors ra in the second row in the third region E3 are connected to the terminal P4 via the wiring 54.
  • FIG. The +X side ends of the plurality of real resistors ra in the second row in the third region E3 are connected to the terminal P3 via the wiring 55 .
  • each of the first and second columns in the ninth region E9 four real resistors ra are arranged at intervals in the Y direction in each of the first and second columns in the ninth region E9.
  • the four real resistors ra arranged in the second row in the ninth region E9 are the real resistors ra used as resistors of the third resistor circuit 23, as in FIG.
  • the four real resistors ra arranged in the first row in the ninth region E9 are real resistors ra that are used as resistors of the fourth resistor circuit 24, unlike in FIG.
  • two dummy resistors rb are arranged in each of the first and second columns in the eighth region E8, but in the first chip 5A of FIG.
  • Two real resistors ra are arranged in the first row in the region E8.
  • two dummy resistors rb are arranged in each of the first and second columns in the tenth region E10, but in the first chip 5A of FIG. , two real resistors ra are arranged in the first row in the tenth region E10.
  • the fourth resistor circuit 24 includes a plurality of real resistors ra in the seventh region E7, two real resistors ra in the first column in the eighth region E8, and a ninth It consists of a plurality of real resistors ra in the first row in the region E9, two real resistors ra in the first row in the tenth region E10, and a plurality of real resistors ra in the eleventh region E11.
  • the fourth resistor circuit 24 is included in the seventh region E7, the first column in the eighth region E8, the first column in the ninth region E9, the first column in the tenth region E10, and the eleventh region E11. consists of a series circuit of all real resistors ra.
  • two real resistors ra adjacent in the X direction are electrically connected to each other at their inner ends.
  • the -X side end of the odd-numbered real resistor ra from the +Y-side end is the -X side of the even-numbered real resistor ra adjacent to the -Y side. connected to the side ends.
  • the +X side end of the even-numbered real resistor ra from the +Y-side end is the +X-side end of the odd-numbered real resistor ra adjacent to the -Y side. connected to the
  • the region obtained by integrating the regions E8, E9, and E10 is the second integrated region
  • the -X side end of the real resistor ra in the even-numbered row from the +Y side end are connected to the -X side ends of the odd-numbered real resistors ra adjacent to the -Y side thereof.
  • the +X side ends of the odd-numbered real resistors ra from the +Y-side end are respectively adjacent even-numbered real resistors ra on the -Y side. is connected to the +X side end of the .
  • two real resistors ra adjacent in the X direction are electrically connected to each other at their inner ends.
  • the -X side end of the even-numbered real resistor ra from the +Y-side end is -X of the odd-numbered real resistor ra adjacent to the -Y side. connected to the side ends.
  • the +X-side end of the odd-numbered real resistor ra from the +Y-side end is the +X-side end of the even-numbered real resistor ra adjacent to the -Y side. connected to the
  • the -X side end of the real resistor ra at the -Y side end of the first row in the region E7 is connected to the -X side end of the real resistor ra at the +Y side end of the first row in the second integration region. It is connected.
  • the -X side end of the real resistor ra at the -Y side end of the first row in the second integrated region is connected to the -X side end of the real resistor ra at the +Y side end of the first row in the region E11. It is connected.
  • all the real resistors ra included in the region E7, the first row in the second integration region, and the region E11 are connected in series.
  • the +X side end of the real resistor ra at the +Y side end of the second column in the region E7 is connected to the terminal P6 via the wiring 57.
  • the +X-side end of the real resistor ra on the -Y-side end of the second column in the region E11 is connected to the terminal P2 via the wiring 58 .
  • the third resistor circuit 23 consists of a parallel circuit of a plurality of (four in the example of FIG. 12) real resistors ra in the second column in the ninth region E9.
  • the ⁇ X side ends of the plurality of real resistors ra in the second row in the ninth region E9 are electrically connected to each other, and the +X side ends of these real resistors ra are connected to each other. are electrically connected.
  • the ⁇ X side ends of the plurality of real resistors ra in the second row in the ninth region E9 are connected to the terminal P5 via the wiring 59.
  • FIG. The +X side ends of the plurality of real resistors ra in the second row in the ninth region E9 are connected to the terminal P6 via the wiring 60 .

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PCT/JP2022/038987 2021-11-12 2022-10-19 半導体装置 Ceased WO2023085026A1 (ja)

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JP2023559519A JPWO2023085026A1 (https=) 2021-11-12 2022-10-19
US18/658,632 US20240296980A1 (en) 2021-11-12 2024-05-08 Semiconductor device

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04346519A (ja) * 1991-05-24 1992-12-02 Fujitsu Ltd 半導体集積回路装置
JPH065788A (ja) * 1992-06-19 1994-01-14 Nec Corp 半導体装置
JP2003258642A (ja) * 2002-03-05 2003-09-12 Matsushita Electric Ind Co Ltd Ｄａ変換器
JP2011204925A (ja) * 2010-03-25 2011-10-13 Seiko Instruments Inc 半導体装置
JP2014220491A (ja) * 2013-04-09 2014-11-20 富士電機株式会社 薄膜抵抗体群およびそれを内蔵した多層配線基板
JP2016136608A (ja) * 2015-01-16 2016-07-28 新日本無線株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021184533A (ja) 2020-05-21 2021-12-02 キヤノン株式会社 情報処理装置、情報処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04346519A (ja) * 1991-05-24 1992-12-02 Fujitsu Ltd 半導体集積回路装置
JPH065788A (ja) * 1992-06-19 1994-01-14 Nec Corp 半導体装置
JP2003258642A (ja) * 2002-03-05 2003-09-12 Matsushita Electric Ind Co Ltd Ｄａ変換器
JP2011204925A (ja) * 2010-03-25 2011-10-13 Seiko Instruments Inc 半導体装置
JP2014220491A (ja) * 2013-04-09 2014-11-20 富士電機株式会社 薄膜抵抗体群およびそれを内蔵した多層配線基板
JP2016136608A (ja) * 2015-01-16 2016-07-28 新日本無線株式会社 半導体装置

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