CN118235246A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN118235246A
CN118235246A CN202280074970.9A CN202280074970A CN118235246A CN 118235246 A CN118235246 A CN 118235246A CN 202280074970 A CN202280074970 A CN 202280074970A CN 118235246 A CN118235246 A CN 118235246A
Authority
CN
China
Prior art keywords
resistors
resistor
region
circuit
actual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280074970.9A
Other languages
English (en)
Chinese (zh)
Inventor
和田惠治
西尾和真
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN118235246A publication Critical patent/CN118235246A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C13/00—Resistors not provided for elsewhere
    • H01C13/02—Structural combinations of resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202280074970.9A 2021-11-12 2022-10-19 半导体装置 Pending CN118235246A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-184533 2021-11-12
JP2021184533 2021-11-12
PCT/JP2022/038987 WO2023085026A1 (ja) 2021-11-12 2022-10-19 半導体装置

Publications (1)

Publication Number Publication Date
CN118235246A true CN118235246A (zh) 2024-06-21

Family

ID=86335619

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280074970.9A Pending CN118235246A (zh) 2021-11-12 2022-10-19 半导体装置

Country Status (5)

Country Link
US (1) US20240296980A1 (https=)
JP (1) JPWO2023085026A1 (https=)
CN (1) CN118235246A (https=)
DE (1) DE112022004933T5 (https=)
WO (1) WO2023085026A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04346519A (ja) * 1991-05-24 1992-12-02 Fujitsu Ltd 半導体集積回路装置
JPH065788A (ja) * 1992-06-19 1994-01-14 Nec Corp 半導体装置
JP2003258642A (ja) * 2002-03-05 2003-09-12 Matsushita Electric Ind Co Ltd Ｄａ変換器
JP2011204925A (ja) * 2010-03-25 2011-10-13 Seiko Instruments Inc 半導体装置
JP2014220491A (ja) * 2013-04-09 2014-11-20 富士電機株式会社 薄膜抵抗体群およびそれを内蔵した多層配線基板
JP6541223B2 (ja) * 2015-01-16 2019-07-10 新日本無線株式会社 半導体装置
JP2021184533A (ja) 2020-05-21 2021-12-02 キヤノン株式会社 情報処理装置、情報処理方法

Also Published As

Publication number Publication date
DE112022004933T5 (de) 2024-08-22
JPWO2023085026A1 (https=) 2023-05-19
WO2023085026A1 (ja) 2023-05-19
US20240296980A1 (en) 2024-09-05

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