WO2023084634A1 - 蒸着装置 - Google Patents

蒸着装置 Download PDF

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Publication number
WO2023084634A1
WO2023084634A1 PCT/JP2021/041307 JP2021041307W WO2023084634A1 WO 2023084634 A1 WO2023084634 A1 WO 2023084634A1 JP 2021041307 W JP2021041307 W JP 2021041307W WO 2023084634 A1 WO2023084634 A1 WO 2023084634A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
mask
touch plate
vapor deposition
hook portion
Prior art date
Application number
PCT/JP2021/041307
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
修士 牛尾
聖士 藤原
裕士 今田
通 園田
Original Assignee
シャープディスプレイテクノロジー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープディスプレイテクノロジー株式会社 filed Critical シャープディスプレイテクノロジー株式会社
Priority to PCT/JP2021/041307 priority Critical patent/WO2023084634A1/ja
Priority to CN202180102311.7A priority patent/CN117941052A/zh
Priority to JP2023559255A priority patent/JPWO2023084634A1/ja
Publication of WO2023084634A1 publication Critical patent/WO2023084634A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to vapor deposition equipment.
  • Patent Document 1 discloses an alignment method for a vapor deposition apparatus.
  • alignment means aligning the alignment marks (film formation positions) of the mask and the substrate with each other in parallel. If the substrate bends under its own weight and is not parallel, the direction in which the substrate extends becomes non-uniform when placed on the mask after alignment. As a result, the positions of the alignment holes on the mask and the positions of the alignment marks on the substrate tend to be misaligned, and misalignment is detected in the final check. As a result, an alignment retry occurs.
  • a touch plate (hereinafter referred to as TP) is provided on the opposite side of the mask, and the weight of the TP presses the substrate to suppress the bending of the substrate.
  • the substrate Before being placed on the mask, the substrate is flexed and the peripheral edge of the substrate is supported by the hooks. If the TP is simply placed on the substrate in that state, a strong load is applied to the edge of the substrate that is in local contact with the hooks, causing the substrate to crack.
  • the state is shown in FIG.
  • the board 3 bent by its own weight is supported by the hook part 5, and the end part of the board 3 is slightly lifted from the hook part 5. - ⁇ When the TP4a is placed on the substrate 3 in this state, a pressing force is applied to the contact portions T1 and T2 where the substrate 3 and the TP4a are in contact with each other.
  • FIGS. 9A to 9D show the situation after the substrate 3 and the mask 2 have been aligned. Since the amount of bending of the TP4a is smaller than that of the substrate 3, the substrate 3 and the TP4a are in contact with each other at their peripheral edges and slightly separated from each other at their central portions. Next, the hook portion 5 descends, and the substrate 3 and the mask 2 come into contact with each other at the central portion as shown in FIG. 9B. At this time, the substrate 3 and TP4a are in contact with each other at the peripheral edge of the substrate 3 and TP4a as in FIG. 9A.
  • the hook portion 5 is further lowered, and the substrate 3 and the mask 2 come into contact with each other over the entire surface.
  • the amount of bending of the mask 2 is less than the amount of bending of the substrate 3 and TP4a, the bending of the substrate 3 is eliminated, and the substrate 3 and TP4a begin to come into contact with each other at the central portion. begin to move away a little.
  • the TP4a is lowered, and the substrate 3 and the peripheral edge of the TP4a are brought into contact with each other in FIG. 9C.
  • the contact point between the substrate 3 and TP4a moves from the peripheral edge to the central portion, so that the starting point of elongation of the substrate 3 (fixed point) is the central portion of the TP4a (contact point with the substrate 3). ) alone becomes unstable. Therefore, when the substrate 3 is caught by the contact point with the TP 4a and stretches, the direction in which the deflection is eliminated becomes random, and the substrate 3 and the mask 2 are misaligned.
  • An object of one embodiment of the present invention is to suppress displacement of a substrate after alignment in a vapor deposition apparatus.
  • a vapor deposition apparatus includes a metal mask, a touch plate that presses a substrate fixed on the mask from the side opposite to the mask, the substrate, and the periphery of the touch plate.
  • a supporting hook portion and a magnet installed on the side of the touch plate opposite to the substrate are provided, and the touch plate is warped to the side opposite to the substrate.
  • the touch plate is warped in the opposite direction to the substrate, it is possible to suppress displacement of the substrate after alignment.
  • FIG. 4 is a top view showing the appearance of the hook portion according to Embodiment 1 of the present invention;
  • FIG. FIG. 2 is a cross-sectional view showing a gap portion according to Embodiment 1 of the present invention;
  • FIG. 2 is a cross-sectional view showing a gap portion according to Embodiment 1 of the present invention;
  • FIG. 4 is a diagram showing a contact state between the substrate and the touch plate according to Embodiment 1 of the present invention;
  • FIG. 4 is a diagram showing a contact state between the substrate and the touch plate according to Embodiment 1 of the present invention
  • FIG. 4 is a diagram showing contact of a touch plate, a substrate, and a mask according to Embodiment 1 of the present invention
  • FIG. 4 is a diagram showing contact of a touch plate, a substrate, and a mask according to Embodiment 1 of the present invention
  • FIG. 4 is a diagram showing contact of a touch plate, a substrate, and a mask according to Embodiment 1 of the present invention
  • FIG. 4 is a diagram showing contact of a touch plate, a substrate, and a mask according to Embodiment 1 of the present invention
  • It is a figure for demonstrating the effect which concerns on Embodiment 1 of this invention.
  • FIG. 10 is a diagram showing a substrate and a touch plate supported by hooks according to the prior art; It is a figure which shows the alignment method based on a prior art. It is a figure which shows the alignment method based on a prior art. It is a figure which shows the alignment method based on a prior art. It is a figure which shows the alignment method based on a prior art. It is a figure which shows the alignment method based on a prior art.
  • Embodiment 1 of the present invention will be described in detail below.
  • FIG. 1 is a diagram showing part of the configuration of a vapor deposition apparatus 1.
  • the vapor deposition device 1 is, for example, a device for forming an organic light-emitting diode (hereinafter referred to as OLED) light-emitting layer on a substrate 3 .
  • the vapor deposition device 1 includes a mask 2, a TP4, a hook portion 5, a magnet 6, and a vapor deposition source .
  • the mask 2 is a vapor deposition mask made of metal, and covers a region on the substrate 3 where the light-emitting layer is not formed.
  • the TP4 presses the substrate 3 fixed on the mask 2 from the side opposite to the mask 2 .
  • the hook portion 5 supports the substrate 3 and the periphery (periphery) of the TP4.
  • a magnet 6 is installed on the opposite side of the TP4 from the substrate 3 in order to bring the mask 2 into close contact with the substrate 3 by magnetic force.
  • the vapor deposition source 10 emits organic material vapor vertically upward in order to form a light-emitting layer on the substrate 3 .
  • FIG. 2 shows the size of TP4.
  • the horizontal size XT and the vertical size YT of the TP4 are set to be 1.05 to 1.1 times the horizontal size Xg and the vertical size Yg of the substrate 3, respectively, and the horizontal size XT and the vertical size The ratio with YT shall not be changed. Further, as shown in FIG. 1, the TP4 is warped vertically upward (the side opposite to the substrate 3) in the long side direction.
  • FIG. 3 is a top view showing the appearance of the hook portion 5 according to this embodiment.
  • the hook portions 5 are provided inside the frame 51 corresponding to the four sides of the substrate 3 and TP4, and support the ends of the substrate 3 and TP4.
  • the number of hook portions 5 may be changed according to the size of the substrate 3 or the like.
  • the hook portion 5 is provided with a cushioning material 8 in contact with the substrate 3 and a shim plate (plate member) 7 in contact with the TP 4 .
  • the hook portions 5 are not provided at the four corners (corner portions C) of the substrate 3 and TP4. In other words, the corners C of substrate 3 and TP4 are not supported by hooks 5 .
  • (Gap SP) 4A and 4B are cross-sectional views showing the gap portion (gap) SP according to the present embodiment.
  • TP4 is supported by hook portion 5 via shim plate 7 .
  • the substrate 3 is supported by the hook portion 5 without the shim plate 7 interposed therebetween.
  • a cushioning material 8 is provided on the mounting surface of the hook portion 5 that supports the substrate 3 and TP4, and the substrate 3 is placed on the cushioning material 8 .
  • the TP4 is placed on the shim plate 7 provided on the cushioning material 8 .
  • the thickness TS of the shim plate 7 is formed larger than the thickness of the substrate 3 .
  • FIG. 4A shows a state in which the substrate 3 and TP4 are placed on the hook portion 5 and a state in which the substrate 3 and the mask 2 are in contact with each other, and the edge of the TP4 is supported by the shim plate 7. Since the thickness TS of the shim plate 7 is larger than the thickness TK of the substrate 3 , a space SP is formed between the substrate 3 and TP4 in the hook portion 5 . The space SP is a space surrounded by the substrate 3, TP4, and shim plate 7. As shown in FIG. In addition, TP4 is embossed on the surface on the substrate 3 side, and projections 41 are provided. The protrusion 41 suppresses separation electrification that occurs when the substrate 3 and TP4 are separated.
  • TP4 is warped to the side opposite to the substrate 3.
  • the distance TG between the substrate 3 and the projections 41 is desirably 0.3 mm or more.
  • the thickness TS of the shim plate 7 is desirably 0.8 mm or more and 1.0 mm or less.
  • the height TT of the projection 41 is desirably 0.1 mm or more and 0.3 mm or less.
  • the substrate 3 and the protrusion 41 are brought into contact with each other with a force that does not crack the substrate 3.
  • the thickness TK is 0.5 mm
  • the thickness TS of the shim plate 7 is preferably 0.9 mm.
  • FIG. 4B shows a state in which the substrate 3, mask 2, TP4, and magnet 6 are in contact with each other over the entire surface.
  • the protrusion 41 contacts the substrate 3 when the substrate 3 and TP4 are horizontal.
  • FIG. 5A and 5B are diagrams showing the state of contact between substrate 3 and TP4 at corner C shown in FIG.
  • Protrusions 42 that thicken TP4 are provided at the four corners of the surface of TP4 on the substrate 3 side.
  • the convex portion 42 includes a slope portion 42a provided obliquely with respect to the surface of TP4, and a plane portion 42b provided parallel to the surface of TP4.
  • FIG. 5A shows a state in which the substrate 3 and TP4 are placed on the hook portion 5 and a state in which the substrate 3 and the mask 2 are in contact with each other.
  • TP4 is warped to the side opposite to substrate 3, projection 41 and substrate 3 are not in contact.
  • the convex portion 42 is in contact with the substrate 3 at a part of the slope portion 42a.
  • the substrate 3, the mask 2, the TP4, and the magnet 6 are in contact with each other over the entire surface. It is in contact with the substrate 3.
  • the TP4 stably presses the peripheral edge of the substrate 3, the contact point between the substrate 3 and the mask 2 does not move from the peripheral edge to the central portion, thereby suppressing substrate deviation. Furthermore, by reducing alignment retries, transfer of foreign matter between the mask 2 and the substrate 3 can be reduced. In addition, the center of the substrate 3 is less likely to be rubbed, and scratches on the back surface (the surface of the substrate 3 on the TP4 side) can be alleviated. For example, it is effective when performing a peeling process for peeling off a base of glass from the substrate 3 .
  • (Alignment method) 6A to 6D are diagrams showing the contact of convex TP 4, substrate 3 and mask 2 according to the present embodiment, showing the deposition alignment method.
  • the substrate 3 and the mask 2 are aligned with the substrate 3 and the TP4 placed on the hook portion 5 .
  • the peripheral edge of the substrate 3 is slightly pressed against the TP4.
  • FIG. 6C shows a state in which the hook portion 5 is further lowered and the substrate 3 and the mask 2 are in further contact. While the substrate 3 is placed along the mask 2, the TP4 is pressed from the periphery.
  • FIG. 6D shows a state in which the hook portion 5 is further lowered and the substrate 3 and the mask 2 are in contact with each other over the entire surface.
  • the TP4 is slightly stretched by its own weight, and the area for holding the periphery of the substrate 3 is enlarged compared to when it is placed on the hook portion 5 .
  • FIG. 7A shows the ratio of the average number of alignment retries per fixed period in the vapor deposition apparatus.
  • the number of retries (April f) in the vapor deposition apparatus 12 using the conventional TP4a was assumed to be 1 (100%) for calculation.
  • FIG. 7B shows the average number of retries at a particular stage during that total period.
  • FIG. 7C shows the ratio of the number of alignment retries and the number of defects due to foreign matter transfer.
  • the highest number of total retries (April 1st) and the number of defects (April m) were set to 1 (100%) for calculation.
  • the average number of retries from April l to May n decreased from 0.97 to 0.51 from June o to June t, and the average number of defects was also 0.74. to 0.25.
  • the number of alignment retries is reduced by using TP4, so the amount of deviation between the alignment mark and the mask hole is reduced. Therefore, the substrate 3 is flattened to some extent from the initial stage of temporary alignment by TP4, and the substrate 3 can be stretched uniformly when the substrate 3 comes into contact with the mask 2 . That is, displacement of the substrate 3 can be suppressed.
  • the unnecessary number of contacts between the substrate 3 and the mask 2 can be reduced. Therefore, transfer of foreign matter between the substrate 3 and the mask 2 can be suppressed.
  • a vapor deposition apparatus includes a metal mask, a touch plate that presses a substrate fixed on the mask from the opposite side of the mask, the substrate, and a hook portion that supports the periphery of the touch plate. and a magnet installed on the side of the touch plate opposite to the substrate, wherein the touch plate is curved to the side opposite to the substrate.
  • a plate member thicker than the substrate is further provided, the touch plate is supported by the hook portion via the plate member, and the substrate is supported by the hook portion without the plate member.
  • the hook portion has a gap between the substrate and the touch plate.
  • the hook portions are not provided at the corners of the substrate and the touch plate.
  • the touch plate has an embossed surface on the substrate side.
  • the present invention is not limited to the above-described embodiments, but can be modified in various ways within the scope of the claims, and can be obtained by appropriately combining technical means disclosed in different embodiments. is also included in the technical scope of the present invention. Furthermore, new technical features can be formed by combining the technical means disclosed in each embodiment.
  • Vapor Deposition Device 2 Mask 3 Substrate 4 TP (Touch Plate) 5 hook portion 6 magnet 7 shim plate (plate member)

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2021/041307 2021-11-10 2021-11-10 蒸着装置 WO2023084634A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2021/041307 WO2023084634A1 (ja) 2021-11-10 2021-11-10 蒸着装置
CN202180102311.7A CN117941052A (zh) 2021-11-10 2021-11-10 蒸镀装置
JP2023559255A JPWO2023084634A1 (zh) 2021-11-10 2021-11-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/041307 WO2023084634A1 (ja) 2021-11-10 2021-11-10 蒸着装置

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WO2023084634A1 true WO2023084634A1 (ja) 2023-05-19

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006172930A (ja) * 2004-12-16 2006-06-29 Hitachi High-Tech Electronics Engineering Co Ltd 真空蒸着方法及びｅｌディスプレイ用パネル
JP2018193618A (ja) * 2016-03-10 2018-12-06 鴻海精密工業股▲ふん▼有限公司 蒸着マスク、蒸着装置、蒸着方法及び有機ｅｌ表示装置の製造方法
WO2020194469A1 (ja) * 2019-03-25 2020-10-01 シャープ株式会社 蒸着装置、および表示装置の製造方法
JP2021102811A (ja) * 2019-12-24 2021-07-15 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
JP2021143408A (ja) * 2020-03-13 2021-09-24 キヤノントッキ株式会社 マスク取付装置、成膜装置、マスク取付方法、成膜方法、電子デバイスの製造方法、マスク、基板キャリア、及び基板キャリアとマスクのセット

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006172930A (ja) * 2004-12-16 2006-06-29 Hitachi High-Tech Electronics Engineering Co Ltd 真空蒸着方法及びｅｌディスプレイ用パネル
JP2018193618A (ja) * 2016-03-10 2018-12-06 鴻海精密工業股▲ふん▼有限公司 蒸着マスク、蒸着装置、蒸着方法及び有機ｅｌ表示装置の製造方法
WO2020194469A1 (ja) * 2019-03-25 2020-10-01 シャープ株式会社 蒸着装置、および表示装置の製造方法
JP2021102811A (ja) * 2019-12-24 2021-07-15 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
JP2021143408A (ja) * 2020-03-13 2021-09-24 キヤノントッキ株式会社 マスク取付装置、成膜装置、マスク取付方法、成膜方法、電子デバイスの製造方法、マスク、基板キャリア、及び基板キャリアとマスクのセット

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CN117941052A (zh) 2024-04-26

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