WO2023079956A1 - 処理方法及び処理システム - Google Patents

処理方法及び処理システム Download PDF

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Publication number
WO2023079956A1
WO2023079956A1 PCT/JP2022/038885 JP2022038885W WO2023079956A1 WO 2023079956 A1 WO2023079956 A1 WO 2023079956A1 JP 2022038885 W JP2022038885 W JP 2022038885W WO 2023079956 A1 WO2023079956 A1 WO 2023079956A1
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WO
WIPO (PCT)
Prior art keywords
substrate
peripheral
wafer
peripheral edge
modified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/038885
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English (en)
French (fr)
Japanese (ja)
Inventor
和哉 久野
義広 川口
豪介 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020247018037A priority Critical patent/KR20240107142A/ko
Priority to JP2023557937A priority patent/JP7784443B2/ja
Priority to CN202280071535.0A priority patent/CN118160072A/zh
Priority to US18/706,115 priority patent/US20240416450A1/en
Publication of WO2023079956A1 publication Critical patent/WO2023079956A1/ja
Anticipated expiration legal-status Critical
Priority to JP2025210279A priority patent/JP2026048725A/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/11—Region-based segmentation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20021—Dividing image into blocks, subimages or windows
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Definitions

  • the present disclosure relates to processing methods and processing systems.
  • Patent Document 1 in a superimposed substrate in which a first substrate and a second substrate are bonded, a reforming agent is introduced into the inside of the first substrate along the boundary between the peripheral edge portion and the central portion of the first substrate to be removed.
  • a substrate processing system includes a modified layer forming device for forming a layer and a peripheral edge removing device for removing a peripheral edge portion of a first substrate with the modified layer as a starting point.
  • the technique according to the present disclosure appropriately removes the peripheral portion of the first substrate in the superimposed substrate in which the first substrate and the second substrate are bonded.
  • One aspect of the present disclosure is a method for treating a polymerized substrate in which a first substrate and a second substrate are bonded, wherein an interface laser beam is irradiated to an interface between the first substrate and the second substrate. forming an unbonded region with reduced bonding strength at the interface; inspecting the state of formation of the unbonded region; peripheral edge portion of the first substrate; and central portion of the first substrate. and removing the peripheral portion with the modified peripheral layer as a base point, and inspection of the formation state of the unbonded region is performed using a camera capturing an image of the unbonded region; obtaining a gray value distribution of the unbonded region in plan view from the captured image of the unbonded region; comparing the obtained gray value with a preset threshold value. and inspecting the formation state of the unbonded region.
  • the peripheral portion of the first substrate can be appropriately removed.
  • FIG. 3 is a side view showing a configuration example of a superimposed wafer to be processed
  • 1 is a plan view showing an outline of the configuration of a wafer processing system according to this embodiment
  • FIG. 4 is a cross section showing the state of an unbonded region, a peripheral edge modified layer, and a split modified layer formed on a superposed wafer
  • FIG. 3 is a plan view showing the outline of the configuration of an interfacial reforming device and an internal reforming device
  • FIG. 2 is a side view showing the schematic configuration of an interfacial reforming device and an internal reforming device
  • FIG. 3 is an explanatory diagram showing main steps of wafer processing in the wafer processing system
  • 4 is a flow chart showing main steps of wafer processing in the wafer processing system
  • FIG. 4 is a flow chart showing main steps of inspection in the interface modification apparatus;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the internal reforming device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the internal reforming device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the internal reforming device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the internal reforming device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the internal reforming device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the internal reforming device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the internal reforming device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the internal reforming device;
  • FIG. 4 is a flow chart showing main steps of inspection in the internal reformer.
  • FIG. 11 is an explanatory diagram showing another example of formation of a modified edge layer inside the first wafer;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the edge removing device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the edge removing device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the edge removing device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the edge removing device;
  • FIG. 4 is an explanatory diagram showing how an inspection is performed in the edge removing device;
  • FIG. 4 is a flow chart showing main steps of inspection in the peripheral edge removing apparatus;
  • a first substrate silicon substrate such as a semiconductor
  • a second substrate are bonded to each other to form a first wafer. Removing the peripheral edge, a so-called edge trim, may be performed.
  • the edge trim of the first substrate is performed using the substrate processing system disclosed in Patent Document 1, for example. That is, a modified layer is formed by irradiating the inside of the first substrate with a laser beam, and the peripheral portion is removed from the first substrate using the modified layer as a starting point. Further, according to the substrate processing system described in Patent Document 1, a modified surface is formed by irradiating the interface where the first substrate and the second substrate are bonded together with a laser beam, thereby forming a modified surface in the peripheral portion. It is intended to reduce the bonding strength between the first substrate and the second substrate to appropriately remove the peripheral portion.
  • the periphery of the object to be removed may be affected by various factors such as axial misalignment of the laser beam.
  • the modified surface cannot be appropriately formed on the entire surface of the part.
  • the modified surface cannot be formed on the entire peripheral edge, for example, when the modified surface cannot be formed partially in the circumferential direction or when the formed width of the modified surface is not uniform on the entire circumference, A part of the peripheral portion of the first substrate to be removed remains on the central portion side of the first substrate, which may cause generation of particles and the like in subsequent steps.
  • a first wafer W as a first substrate and a second wafer S as a second substrate are joined together to form a superposed substrate.
  • the process is performed on the superposed wafer T as .
  • the surface of the first wafer W to be bonded to the second wafer S will be referred to as a front surface Wa
  • the surface opposite to the front surface Wa will be referred to as a rear surface Wb.
  • the surface on the side bonded to the first wafer W is referred to as a front surface Sa
  • the surface opposite to the front surface Sa is referred to as a rear surface Sb.
  • the first wafer W is, for example, a semiconductor wafer such as a silicon substrate, and a device layer Dw including a plurality of devices is formed on the surface Wa side.
  • a bonding film Fw is further formed on the device layer Dw, and is bonded to the second wafer S via the bonding film Fw.
  • the bonding film Fw for example, an oxide film (THOX film, SiO 2 film, TEOS film), SiC film, SiCN film, adhesive, or the like is used.
  • the peripheral edge portion We of the first wafer W is chamfered, and the thickness of the cross section of the peripheral edge portion We decreases toward its tip.
  • the peripheral portion We is a portion to be removed in the edge trim described later, and is in the range of 0.5 mm to 3 mm in the radial direction from the outer end portion of the first wafer W, for example.
  • a region radially inside the peripheral edge portion We to be removed in the first wafer W may be referred to as a central portion Wc.
  • the second wafer S has, for example, the same configuration as the first wafer W, the device layer Ds and the bonding film Fs are formed on the surface Sa, and the peripheral portion is chamfered.
  • the second wafer S does not have to be a device wafer on which the device layer Ds is formed, and may be a support wafer that supports the first wafer W, for example. In such a case, the second wafer S functions as a protective material that protects the device layer Dw of the first wafer W.
  • the wafer processing system 1 has a configuration in which a loading/unloading station 2 and a processing station 3 are integrally connected.
  • a cassette C capable of accommodating a plurality of superposed wafers T is loaded/unloaded to/from the outside.
  • the processing station 3 includes various processing devices for performing desired processing on the superposed wafer T.
  • the loading/unloading station 2 is provided with a cassette mounting table 10 on which a cassette C capable of accommodating a plurality of superposed wafers T is mounted.
  • a wafer transfer device 20 is provided adjacent to the cassette mounting table 10 on the positive side of the cassette mounting table 10 in the X-axis direction.
  • the wafer transfer device 20 is configured to move on a transfer path 21 extending in the Y-axis direction and transfer superimposed wafers T between a cassette C on the cassette mounting table 10 and a transition device 30 which will be described later.
  • the loading/unloading station 2 is provided with a transition device 30 adjacent to the wafer transport device 20 on the X-axis positive direction side of the wafer transport device 20 and for transferring the overlapped wafers T to and from the processing station 3 . ing.
  • a wafer transfer device 40 In the processing station 3, a wafer transfer device 40, an interface reforming device 50, an internal reforming device 60, a peripheral removal device 70 and a cleaning device 80 are arranged.
  • the wafer transfer device 40 is provided on the side of the transition device 30 in the positive direction of the X axis.
  • the wafer transfer device 40 is configured to be movable on a transfer path 41 extending in the X-axis direction, and includes the transition device 30 of the loading/unloading station 2, the interface reforming device 50, the internal reforming device 60, the edge removing device 70, and the cleaning device.
  • the device 80 is configured so that the superposed wafer T can be transferred.
  • the interface modification apparatus 50 irradiates the interface between the first wafer W and the second wafer S with a laser beam (interface laser beam, for example, a CO 2 laser), and the first wafer W at the peripheral portion We to be removed. and the second wafer S to form an unbonded area Ae (see FIG. 3) in which the bonding strength is reduced.
  • a laser beam interface laser beam, for example, a CO 2 laser
  • the interface modification device 50 has a chuck 100 that holds the superposed wafer T on its upper surface.
  • the chuck 100 sucks and holds the rear surface Sb of the second wafer S with the first wafer W on the upper side and the second wafer S on the lower side.
  • a chuck 100 is supported by a slider table 102 via an air bearing 101 .
  • a rotating mechanism 103 is provided on the lower surface side of the slider table 102 .
  • the rotation mechanism 103 incorporates, for example, a motor as a drive source.
  • the chuck 100 is rotatable about a vertical axis via an air bearing 101 by a rotating mechanism 103 .
  • the slider table 102 is configured to be movable on a rail 106 extending in the Y-axis direction on a base 105 via a moving mechanism 104 provided on the underside thereof.
  • the driving source of the moving mechanism 104 is not particularly limited, for example, a linear motor is used.
  • a laser head 110 is provided above the chuck 100 .
  • the laser head 110 has a lens 111 .
  • the lens 111 is a cylindrical member provided on the lower surface of the laser head 110, and is positioned inside the overlapped wafer T held by the chuck 100, more specifically, at the interface between the first wafer W and the second wafer S. is irradiated with an interface laser beam. As a result, the portion irradiated with the interfacial laser light inside the superposed wafer T is modified, and an unbonded area Ae in which the bonding strength between the first wafer W and the second wafer S is reduced is formed.
  • the "interface between the first wafer W and the second wafer S" includes the first wafer W, the device layers Dw and Ds, the bonding films Fw and Fs, and the second wafer S including each interface and each interior of the .
  • the formation position of the unbonded area Ae is not particularly limited as long as the bonding strength between the first wafer W and the second wafer S can be reduced.
  • the laser head 110 is supported by a support member 112 .
  • the laser head 110 is configured to be vertically movable by a lifting mechanism 114 along a rail 113 extending in the vertical direction.
  • the laser head 110 is configured to be movable in the Y-axis direction by a moving mechanism 115 .
  • the lifting mechanism 114 and the moving mechanism 115 are each supported by a support column 116 .
  • a macro camera 120 and a micro camera 121 are provided above the chuck 100 and on the positive Y-axis side of the laser head 110 .
  • the macro camera 120 and the micro camera 121 are integrated, and the macro camera 120 is arranged on the Y-axis positive side of the micro camera 121 .
  • the macro camera 120 and the micro camera 121 are configured to be vertically movable by an elevating mechanism 122 and further movable in the Y-axis direction by a moving mechanism 123 .
  • the moving mechanism 123 is supported by the support column 116 .
  • the macro camera 120 images the outer edge of the first wafer W (overlapping wafer T). An image captured by the macro camera 120 is used for alignment of the first wafer W, which will be described later, as an example.
  • the macro camera 120 has, for example, a coaxial lens, irradiates at least the first wafer W with transmissive light, such as infrared light (IR), and receives reflected light from the object.
  • IR infrared light
  • the imaging magnification of the macro camera 120 is 2 times.
  • the micro camera 121 images the unbonded area Ae formed at the interface between the first wafer W and the second wafer S. An image captured by the micro camera 121 is used, for example, to detect whether or not the unbonded area Ae has been properly formed.
  • the micro camera 121 has, for example, a coaxial lens, irradiates at least the first wafer W with transmissive light, such as infrared light (IR light), and receives reflected light from an object.
  • IR light infrared light
  • the imaging magnification of the micro camera 121 is 10 times, the field of view is about 1/5 that of the macro camera 120, and the pixel size is about 1/5 that of the macro camera 120.
  • a macro camera 120 and a micro camera 121 are arranged as shown in the drawing, and an image of the unbonded area Ae formed at the interface between the first wafer W and the second wafer S is captured.
  • the imaging magnification can be increased.
  • the unbonded area Ae can be detected with accuracy.
  • the macro camera 120 and the micro camera 121 are arranged as shown in the figure. Camera 120 may be omitted.
  • the chuck 100 can be rotated and horizontally moved relative to the laser head 110 by the rotating mechanism 103 and the moving mechanism 104. It may be constructed so as to be physically rotatable and horizontally movable. Also, both the chuck 100 and the laser head 110 may be configured to be relatively rotatable and horizontally movable.
  • the internal reforming device 60 irradiates the inside of the first wafer W with a laser beam (an internal laser beam, for example, a YAG laser) to form the peripheral edge reforming layer M1 and the peripheral edge portion We, which are starting points for peeling of the peripheral edge portion We.
  • a laser beam an internal laser beam, for example, a YAG laser
  • a divided modified layer M2 is formed as a starting point for fragmentation.
  • the configuration of the internal reformer 60 is not particularly limited.
  • the internal reformer 60 has the same configuration as the interfacial reformer 50 . That is, as shown in FIG. 4, the internal reforming apparatus 60 includes a chuck 200 that holds the superimposed wafer T on its upper surface, and a laser head that irradiates the inside of the first wafer W held by the chuck 200 with an internal laser beam. 210 , and a macro camera 220 and a micro camera 221 for imaging the superposed wafer T held by the chuck 200 .
  • the laser head 210 has a lens 211 .
  • the laser head 210 is configured to be movable by a support member 212 , a rail 213 , an elevating mechanism 214 and a moving mechanism 215 .
  • the lifting mechanism 214 and the moving mechanism 215 are each supported by support columns 216 .
  • the macro camera 220 and the micro camera 221 are configured to be movable by an elevating mechanism 222 and a moving mechanism 223 .
  • the moving mechanism 223 is supported by the support pillars 216 .
  • the chuck 200 and the laser head 210 are configured to be relatively rotatable and horizontally movable by a rotating mechanism 203 and a moving mechanism 204, for example.
  • the laser head 210 has a lens 211 for irradiating the inside of the first wafer W held by the chuck 200 with an internal laser beam.
  • the macro camera 220 images the outer edge of the first wafer W (overlapping wafer T). An image captured by the macro camera 220 is used for alignment of the first wafer W, which will be described later, as an example.
  • the micro camera 221 is positioned in the vicinity of the peripheral edge We of the first wafer W, more specifically, from the outer edge of the first wafer W slightly radially inward of the position where the peripheral modified layer M1 is to be formed (edge trim). , a range including up to the outer edge of the central portion Wc of the first wafer W remaining on the superposed wafer T) is imaged. An image captured by the micro camera 221 is used, for example, to detect whether or not the modified peripheral layer M1 has been properly formed inside the first wafer W.
  • the peripheral edge removing device 70 removes the peripheral edge portion We of the first wafer W, that is, performs edge trimming, with the modified peripheral edge layer M1 formed in the internal modifying device 60 as a base point. Any method of edge trimming can be selected.
  • the rim remover 70 may insert a blade that is, for example, wedge-shaped. Further, for example, an air blow or a water jet may be injected toward the peripheral edge portion We to apply an impact to the peripheral edge portion We.
  • the peripheral edge removing device 70 uses an imaging mechanism 71 (see FIG. 20) to image the peripheral edge portion of the overlapped wafer T after the peripheral edge portion We has been removed, and determines whether the peripheral edge portion We has been properly removed from the first wafer W. can be detected.
  • an imaging mechanism 71 see FIG. 20
  • a CCD camera can be adopted as the imaging mechanism 71 .
  • the cleaning device 80 cleans the first wafer W and the second wafer S after edge trimming by the edge removing device 70 to remove particles on these wafers. Any washing method can be selected.
  • a controller 90 is provided in the wafer processing system 1 described above.
  • the control device 90 is, for example, a computer and has a program storage unit (not shown).
  • the program storage unit stores programs for controlling the processing of the superposed wafers T in the wafer processing system 1 .
  • the program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing devices and transfer devices to realize wafer processing, which will be described later, in the wafer processing system 1 .
  • the program may be recorded in a computer-readable storage medium H and installed in the control device 90 from the storage medium H. Further, the storage medium H may be temporary or non-temporary.
  • the first wafer W and the second wafer S are joined to form a superimposed wafer T in advance.
  • a cassette C containing a plurality of superposed wafers T is mounted on the cassette mounting table 10 of the loading/unloading station 2 .
  • the superposed wafer T in the cassette C is taken out by the wafer transfer device 20 and transferred to the interface modification device 50 via the transition device 30 and the wafer transfer device 40 .
  • the superposed wafer T held by the chuck 100 is moved to the macro imaging position.
  • the macro imaging position is a position where the macro camera 120 can image the outer edge of the first wafer W.
  • FIG. At the macro imaging position, while rotating the chuck 100, the macro camera 120 captures an image of the outer edge of the first wafer W in the circumferential direction of 360 degrees. The captured image is output from macro camera 120 to control device 90 .
  • the control device 90 calculates the amount of eccentricity between the rotation center of the chuck 100 and the center of the first wafer W from the image of the macro camera 120 . Further, the controller 90 calculates the amount of movement of the chuck 100 based on the calculated amount of eccentricity so as to correct the Y-axis component of the amount of eccentricity. The controller 90 horizontally moves the chuck 100 along the Y-axis direction based on the calculated movement amount.
  • the laser head 110 irradiates the interface laser light L1 in a pulsed manner to a predetermined irradiation area of the interface laser light L1, and as shown in FIGS. 3 and 6A, the first wafer
  • the interface between W and the second wafer S (in the illustrated example, the interface between the first wafer W and the bonding film Fw) is modified.
  • "improvement of the interface” includes, for example, amorphization of the device layer Dw and the bonding film Fw at the irradiation position of the interface laser beam L1, and the modification of the first wafer W and the second wafer. S peeling, etc. are included.
  • the interface between the first wafer W and the second wafer S where the unbonded area Ae is formed is not limited to the illustrated example, and the bonding strength between the first wafer W and the second wafer S is reduced. If possible, the unbonded area Ae can be formed at an arbitrary position inside the superposed wafer T. FIG.
  • the irradiation area of the interface laser beam L1 is determined as an annular area having a desired radial width with the outer edge of the first wafer W as a reference, for example.
  • the radial width of the irradiation region is set to a width that can appropriately remove the peripheral portion We of the first wafer W to be removed.
  • the position of the outer edge of the first wafer W, which serves as a reference, may be determined in advance based on the alignment position associated with the movement of the chuck 100 in the Y-axis direction described above, or may be determined based on the imaging result of the macro camera 120 described above. may be obtained based on
  • the interface modification apparatus 50 by modifying the irradiation position of the interface laser light L1 at the interface between the first wafer W and the second wafer S, the first wafer W and the second wafer S An unbonded region Ae is formed in which the bonding strength of S is reduced (step St1 in FIG. 7).
  • edge trimming which will be described later, the peripheral edge portion We of the first wafer W to be removed is removed, but the presence of the unbonded region Ae in this way makes it possible to properly remove the peripheral edge portion We. can be done.
  • Step St2 After the unbonded area Ae is formed at the interface between the first wafer W and the second wafer S, it is next inspected whether the unbonded area Ae is properly formed at the interface (see FIG. 7). Step St2). A detailed inspection method for the interface modification device 50 will be described later.
  • step St2 If it is determined in step St2 that the unbonded area Ae is not properly formed, that is, if the formation width of the unbonded area Ae is larger than the radial width of the peripheral edge portion We to be removed, for example, the unbonded area Ae is
  • the wafer transfer device 40 carries out the superimposed wafer T from the inside of the interface modification device 50 and carries the next superposed wafer T into the interface modification device 50 .
  • the polymerized wafer T carried out from the interface modification device 50 is discarded or collected, for example.
  • step St2 for example, the formation width of the unbonded region Ae is smaller than the set radial width of the peripheral edge portion We to be removed, and the distance from the planned formation position of the peripheral edge modified layer M1 to the set radial outer position is increased. If it is determined that the unbonded area Ae is not formed, or if it is determined that there is a void in a part of the unbonded area Ae, for example, the peripheral edge portion We cannot be properly peeled off at the unformed portion of the unbonded area Ae, and the peripheral edge portion A portion of We may remain on the superposed wafer T. As shown in FIG. In such a case, as shown in FIG.
  • the unformed portion of the unbonded region Ae is again irradiated with the interface laser beam L1 (step St1).
  • the non-bonded area Ae is re-formed with respect to the peripheral portion We to be removed.
  • the condition for re-forming the unbonded area Ae may be fed back to the condition for forming the unbonded area Ae (step St1) for the superposed wafer T to be processed next by the wafer processing system 1 .
  • the superposed wafer T determined in step St2 that the unbonded region Ae has been appropriately formed on the entire surface of the peripheral edge portion We to be removed is next transferred to the internal reforming device 60 by the wafer transfer device 40 .
  • the superposed wafer T held by the chuck 200 is moved to the macro imaging position.
  • the macro imaging position is a position where the macro camera 220 can image the outer edge of the first wafer W.
  • FIG. At the macro imaging position the macro camera 220 captures an image of the outer edge of the first wafer W in the circumferential direction of 360 degrees while rotating the chuck 200 .
  • the captured image is output from macro camera 220 to control device 90 .
  • the controller 90 calculates the amount of eccentricity between the rotation center of the chuck 200 and the center of the first wafer W from the image of the macro camera 220 . Based on the calculated amount of eccentricity, the controller 90 calculates the amount of movement of the chuck 200 so as to correct the Y-axis component of the amount of eccentricity. The controller 90 horizontally moves the chuck 200 along the Y-axis direction based on the calculated movement amount. Furthermore, the control device 90 identifies the position of the radially inner end (hereinafter simply referred to as the “inner end”) of the unbonded area Ae formed by the interface modification device 50 from the image of the macro camera 220 . The irradiation position of the internal laser beam L2 is determined slightly radially inward of the inner end of the unbonded area Ae detected by the macro camera 220, for example, with reference to the inner end.
  • the internal laser beam L2 is irradiated from the laser head 210 to a predetermined irradiation position of the internal laser beam L2, and as shown in FIGS.
  • a peripheral modified layer M1 and a divided modified layer M2 are sequentially formed inside (step St3 in FIG. 7).
  • the modified peripheral layer M1 serves as a base point for removing the peripheral edge portion We in edge trimming, which will be described later.
  • the divided modified layer M2 serves as a starting point for dividing the peripheral portion We to be removed into small pieces. Note that in the drawings used for the following description, the illustration of the divided modified layer M2 may be omitted in order to avoid complication of the illustration.
  • a crack C1 extends inside the first wafer W in the thickness direction of the first wafer W from the modified peripheral layer M1.
  • the upper end of the crack C1 reaches, for example, the surface Wa as shown in FIG. 6(b).
  • the forming position of the modified peripheral layer M1 is set slightly radially inward of the inner end of the unbonded area Ae.
  • the lower end of the crack C1 extends, for example, from the lower end of the peripheral modified layer M1 formed at the bottom toward the inner end of the unbonded area Ae.
  • step St4 After forming the peripheral edge modified layer M1 and the split modified layer M2 inside the first wafer W, next, whether the peripheral edge modified layer M1 is properly formed inside the first wafer W, Further, it is inspected whether or not the crack C1 has extended (step St4 in FIG. 7). A detailed inspection method for the internal reforming device 60 will be described later.
  • step St4 If it is determined in step St4 that the peripheral edge modified layer M1 (crack C1) is not properly formed, the peripheral edge portion We cannot be properly peeled off at the unstretched portion of the crack C1, and a part of the peripheral edge portion We is It may remain on the superposed wafer T. In such a case, the unstretched portion of the crack C1 is irradiated with the internal laser beam L2. As a result, the modified peripheral layer M1 is newly formed inside the first wafer W, and the inner end of the unbonded area Ae and the lower end of the modified peripheral layer M1 are formed via the new modified peripheral layer M1. Crack C1 is extended between.
  • the conditions for forming the new peripheral edge modified layer M1 may be fed back to the conditions for forming the peripheral edge modified layer M1 (step St3) for the next superimposed wafer T processed by the wafer processing system 1 .
  • the wafer transfer device 40 carries out the superimposed wafer T from the internal reforming device 60 and carries the next superimposed wafer T into the internal reforming device 60 .
  • the polymerized wafer T carried out from the internal reformer 60 is discarded or collected, for example.
  • the superposed wafer T determined in step St4 that the modified edge layer M1 (crack C1) has been appropriately formed inside the first wafer W is then transferred to the edge removing apparatus 70 by the wafer transfer apparatus 40. .
  • the peripheral edge removal device 70 removes the peripheral edge portion We of the first wafer W, that is, performs edge trimming (step St5 in FIG. 7).
  • the peripheral portion We is separated from the central portion Wc of the first wafer W with the modified peripheral layer M1 and the crack C1 as starting points, and is completely separated from the second wafer S with the unbonded area Ae as a starting point. be done.
  • the peripheral portion We to be removed is divided into small pieces with the divided modified layer M2 as a base point.
  • a wedge-shaped blade B (see FIG. 6(c)), for example, is inserted into the interface between the first wafer W and the second wafer S forming the superimposed wafer T. good too.
  • step St6 in FIG. 7 After the peripheral edge portion We of the first wafer W has been removed, it is next inspected whether or not the peripheral edge portion We has been appropriately removed from the first wafer W (step St6 in FIG. 7). A detailed inspection method in the edge removing device 70 will be described later.
  • step St6 If it is determined in step St6 that the peripheral edge portion We is not properly formed, that is, if a part of the peripheral edge portion We remains on the overlapped wafer T, it may cause particles or the like to be generated in subsequent steps. may become In such a case, as shown in FIG. 7, the blade B may be inserted again (step St5) into the unpeeled portion of the peripheral portion We. Alternatively, in such a case, the wafer transfer device 40 may carry out the superposed wafer T from the inside of the edge removing device 70 and discard or collect the superposed wafer T. FIG.
  • the superposed wafer T for which it is determined in step St6 that the peripheral edge portion We of the first wafer W has been properly removed, is then transferred to the cleaning apparatus 80 by the wafer transfer apparatus 40. As shown in FIG.
  • the cleaning device 80 cleans the first wafer W and/or the second wafer S from which the peripheral portion We has been removed (step St7 in FIG. 7).
  • the superposed wafer T that has undergone all the processes is transferred to the cassette C on the cassette mounting table 10 by the wafer transfer device 20 via the transition device 30 .
  • the wafer transfer device 20 via the transition device 30 .
  • the unbonded region Ae that reduces the bonding strength between the first wafer W and the second wafer S, and the modified peripheral edge layer M1 that serves as the starting point for peeling of the peripheral edge portion We are formed in this order.
  • the formation order of these is not particularly limited. That is, after the peripheral modified layer M1 is formed inside the first wafer W by the internal reforming device 60, the unbonded region Ae is formed on the interface between the first wafer W and the second wafer S by the interfacial reforming device 50. may be formed.
  • step St2 in FIG. 7 described above a method for inspecting the unbonded area Ae in the interface modification device 50 described above (step St2 in FIG. 7 described above) will be described.
  • the micro camera 121 When inspecting the unbonded area Ae, first, as shown in FIG. 8, while rotating the chuck 100, the micro camera 121 takes an image of the unbonded area Ae formed in step St1 at 360 degrees in the circumferential direction (see FIG. 10). step St2-1). The captured image is output from the micro camera 121 to the control device 90 .
  • the imaging width d1 in the radial direction of the unbonded area Ae by the microcamera 121 is determined by a width including at least the outer edge portion (edge portion) of the first wafer W to the inner edge of the unbonded area Ae.
  • the outer side (outer region: left side of FIG. 9) of the first wafer W is darker than the outer end of the first wafer W, and is darker than the inner end of the unbonded region Ae.
  • the inside (inner area: right side of FIG. 9) becomes brighter.
  • the brightness is approximately intermediate between the outer region and the inner region.
  • the intermediate area that is the formation portion of the unbonded area Ae is radially or It is divided into a plurality of divided regions R (see FIG. 9) in at least one of the circumferential directions (both radial direction and circumferential direction in the illustrated example) (step St2-2 in FIG. 2).
  • gray value statistics such as the mean (Mean) and standard deviation (Sigma) are calculated (step St2-3 in FIG. 10).
  • step St2-3 based on the average value and standard deviation of the gray values calculated in step St2-3, whether or not the unbonded area Ae was appropriately formed in step St1 of FIG. It is detected whether the unbonded area Ae is properly formed on the circumference, whether the formation width of the unbonded area Ae is uniform on the entire circumference, and the like (step St2-4 in FIG. 10).
  • the average value of the gray values obtained in each of the plurality of divided areas R and The standard deviations are considered to show approximately the same value.
  • the unbonded region Ae is the first wafer W. Judge that it is properly formed all around.
  • the "threshold value" is a value determined to allow the peripheral portion We to be properly peeled, and in one example, can be empirically determined based on the result of processing the superposed wafer T in advance.
  • the unbonded region Ae is appropriately formed in the divided region R that becomes the singular point. It is judged that it has not been done.
  • the unbonded area Ae is not properly formed in part of the circumferential direction or the radial direction of the first wafer W due to the influence of the generation of light, for example, at least the unbonded area Ae are not formed at the same height, the reflected height of the infrared light from the micro camera 121 changes, so the average value or standard deviation calculated from the gray value changes, and the unbonded area Ae becomes It can be detected that it is not formed properly.
  • step St2-4 If it is determined in step St2-4 that the unbonded area Ae has not been properly formed, the superposed wafer T is discarded/collected or the unbonded area Ae is re-formed as described above. On the other hand, if it is determined that the unbonded area Ae is properly formed, the series of inspections of the unbonded area Ae is finished, and the superposed wafer T is unloaded from the interface modification device 50 .
  • the unbonded area Ae formed at the interface between the first wafer W and the second wafer S (inside the superposed wafer T) is determined based on the gray value of the image captured by the near-infrared camera. modified state) can be non-destructively inspected.
  • the state of formation of the unbonded area Ae can be inspected in advance.
  • the peripheral edge portion We of the first wafer W in which the unbonded area Ae is formed is imaged by the micro camera 121, and then the average value or standard deviation of the gray values calculated by the control device 90 is Only by comparing at least one of the above with a predetermined threshold value, it is possible to easily inspect the formation state of the unbonded area Ae. Since the inspection can be performed only by comparing the numerical values calculated in this way, it is easy to automatically control the inspection of the formation state of the unbonded area Ae by the control device 90 .
  • the state of formation of the unbonded area Ae is inspected by comparing at least one of the calculated average value and standard deviation of the gray values with a predetermined threshold value.
  • a comparison target is not limited to a predetermined threshold value.
  • the unbonded area Ae of the other overlapped wafer T whose peripheral portion We has been imaged (parameter calculation) before the overlapped wafer T to be inspected. is properly formed and the peripheral portion We can be properly peeled off.
  • the processing result of another overlapped wafer T may be set as a threshold value and fed back to the processing conditions of the overlapped wafer T to be processed.
  • gray values obtained in the same plane of the superposed wafer T to be inspected, that is, in a plurality of divided regions R may be compared with each other.
  • the inspection was performed by imaging the unbonded area Ae with the microcamera 121 provided inside the interface modification device 50, but the imaging mechanism for imaging the unbonded area Ae is Any camera may be used as long as it can appropriately view the bonding area Ae.
  • the micro camera 121 may be omitted in the configuration of the interface modification device 50 .
  • an inspection device (not shown) provided independently outside the interface modification device 50 is used to inspect the unbonded area Ae (step St2) may be performed.
  • the peripheral modified layer M1 and the cracks C1 formed in step St3 are observed at 360 degrees in the circumferential direction by the micro camera 221.
  • An image is taken (step St4-1 in FIG. 16).
  • the captured image is output from the micro camera 221 to the control device 90 .
  • the imaging width d2 in the radial direction by the micro camera 221 is a width that includes at least the outer edge portion (edge portion) of the first wafer W and the crack C1 and the modified peripheral layer M1 formed inside the first wafer W. It is determined.
  • the outer side of the outer edge of the first wafer W (the outer region: the left side of FIG. 12) is darker than the formation position of the peripheral modified layer M1.
  • the inner side (the inner region: the right side of FIG. 12) also becomes brighter.
  • the brightness is approximately intermediate between the outer area and the inner area.
  • the infrared light is reflected by the peripheral edge modified layer M1 formed on the top inside the first wafer W, The brightness is between the intermediate area and the inner area.
  • the coaxial epi-illumination Infrared light illuminated by the method does not reflect toward the microcamera 221 and becomes almost as dark as the outer area.
  • the image captured by the micro camera 221 is compared with the image captured by the micro camera 121 in step St2-1 described above.
  • a dark area (crack C1) is formed between the inner areas and a bright area (periphery modified layer M1) between the intermediate area and the inner area.
  • step St4-2 in FIG. 16 A profile of gray value distribution in one rectangular area Q1 extending in the radial direction of the first wafer W is obtained (step St4-2 in FIG. 16).
  • the gray value distribution the portion where the gray value changes, specifically, the boundary portion between the outer region and the intermediate region, the boundary portion of the intermediate region crack C1 forming portion, and the boundary portion between the crack C1 forming portion and the peripheral modified layer M1 forming portion , and the boundary portion between the periphery modified layer M1 formation portion and the inner region, the gray value changes sharply.
  • the gray value distribution (vertical axis in FIG. 12) of one rectangular area Q1 acquired in step St4-2 is differentiated by the radial position (horizontal axis in FIG. 12) of the first wafer W (Fig. 16 step St4-3).
  • the amount of gray value displacement in the radial direction in one rectangular area Q1 shown in FIG. 12 is calculated, and as shown in FIG. A distribution profile is obtained.
  • step St4-4 based on the displacement amount distribution of the one rectangular area Q1 acquired in step St4-3, the displacement amount height (EdgeHeight) and the displacement amount width (EdgeWidth) in the one rectangular area Q1 shown in FIG. is calculated (step St4-4 in FIG. 16).
  • the profile of the gray value distribution based on the image captured by the micro camera 221 is obtained in the circumferential direction of 360 degrees of the first wafer W.
  • Value and standard deviation, and displacement height and displacement width in the displacement distribution are obtained and calculated.
  • step St3 of FIG. It is detected whether or not the modified layer M1 has been formed and whether or not the crack C1 has properly extended along the entire circumference (step St4-6 in FIG. 16).
  • the peripheral edge modified layer M1 (crack C1) is appropriately formed on the entire circumference of the first wafer W, the gray scale obtained in the plurality of rectangular regions Q1, Q2, . It is considered that the displacement amount height and the displacement amount width of the value displacement amount show similar tendencies. In other words, it is considered that the displacement height and the displacement width of the gray value displacement amount remain constant regardless of the position of the first wafer W in the circumferential direction.
  • the peripheral edge It is determined that the modified layer M1 and the cracks C1 are properly formed on the entire circumference of the first wafer W.
  • the peripheral modified layer M1 or the crack C1 is formed at the circumferential position corresponding to the singular point. It is judged that it is not properly formed.
  • the peripheral modified layer M1 is not properly formed in a part of the circumferential direction, the measured gray value of the infrared light changes, the displacement height of the displacement distribution is shifted, and at least the first It can be detected that the peripheral modified layer M1 formed at the uppermost step in the thickness direction of the wafer W of 1 is not properly formed.
  • the crack C1 does not extend properly in a part of the circumferential direction, reflection of infrared light is detected in a part of the circumferential direction, and it can be detected that the crack C1 does not extend properly.
  • step St4-6 If it is determined in step St4-6 that the peripheral edge modified layer M1 or the crack C1 is not properly formed, as described above, the superposed wafer T is discarded or collected, or the peripheral edge modified layer M1 or the crack C1 is regenerated. form. In such a case, the forming conditions of the peripheral modified layer M1 and the cracks C1 may be feedback-controlled to the processing conditions of the superposed wafer T to be processed by the wafer processing system 1 next. On the other hand, if it is determined that the unbonded area Ae is properly formed, the series of inspections of the modified peripheral layer M1 and the cracks C1 is finished, and the superposed wafer T is unloaded from the internal modification device 60. FIG.
  • the modified peripheral layer M1 and the cracks C1 formed inside the first wafer W can be non-destructively inspected based on the gray value of the image captured by the near-infrared camera. .
  • the state of formation of the peripheral modified layer M1 and the cracks C1 can be inspected in advance.
  • the modified peripheral layer M1 or the crack C1 which is the starting point of peeling of the peripheral edge portion We, is not properly formed, the modified peripheral layer M1 or the crack C1 is removed without peeling the peripheral edge portion We. re-formation, or disposal/recovery of the superposed wafer T can be determined.
  • the percentage of discarded wafers generated in the wafer processing system 1 can be reduced, or the throughput can be improved.
  • step St4 it is inspected whether or not the modified peripheral layer M1 and the crack C1 are properly formed in step St4.
  • the modified peripheral layer M1 formed at a position other than the uppermost layer in the thickness direction cannot be detected by infrared light.
  • the inspection of the modified peripheral layer M1 may be omitted in step St4, and only the extension state of the crack C1 may be inspected.
  • the modified peripheral layer M1 may be formed at a radial position corresponding to the inner end of the unjoined region Ae as shown in FIG. In this case, since the crack C1 does not extend obliquely upward inside the first wafer W, the step St4 described above, that is, the inspection of the modified peripheral layer M1 and the crack C1 may be omitted.
  • the inspection was performed by imaging the modified peripheral layer M1 and the cracks C1 with the micro camera 221 provided inside the internal modification device 60, but the modified peripheral layer M1 and the cracks C1 were inspected.
  • the micro camera 221 may be omitted in the configuration of the internal reforming device 60 .
  • an inspection device (not shown) provided independently outside the internal reforming device 60 is used to inspect the peripheral modified layer M1 and the cracks C1. may be inspected.
  • the inspection apparatus for inspecting the modified peripheral layer M1 and the cracks C1 may further inspect the unbonded area Ae.
  • step St6 in FIG. 7 described above a method for inspecting the removal status of the peripheral portion We (step St6 in FIG. 7 described above) will be described.
  • the edge removing device 70 During the inspection by the edge removing device 70, first, as shown in FIG. 18, while rotating the chuck (not shown), the outer edge of the first wafer W before removing the edge We is detected by the imaging mechanism 71 (for example, a CCD camera). The part is imaged at 360 degrees in the circumferential direction (step St6-0 in FIG. 23). In other words, in the edge removing device 70, the first wafer W is imaged prior to step St5 (edge trimming) shown in FIG. The imaged image is output to the control device 90 .
  • the imaging mechanism 71 for example, a CCD camera
  • the imaging width d3 in the radial direction by the imaging mechanism 71 is a width that includes at least the outer edge portion (edge portion) of the first wafer W to the inner edge of the peripheral edge portion We to be removed (the formation position of the peripheral modified layer M1). determined by
  • step St6-0 the image capturing mechanism 71 captures an image of the rear surface Wb of the first wafer W before removal of the peripheral portion We. is darker on the outside and lighter on the inside than the outer edge of the first wafer W.
  • a wedge-shaped blade B for example, is inserted into the interface between the first wafer W and the second wafer S forming the superposed wafer T (see FIG. 6(c)) to remove the peripheral edge portion We. That is, edge trimming is performed (step St5 in FIGS. 7 and 23).
  • an imaging mechanism 71 for example, a CCD camera
  • An image of the outer edge of one wafer W is taken at 360 degrees in the circumferential direction (step St6-1 in FIG. 23).
  • the imaged image is output to the control device 90 .
  • the imaging width in the radial direction by the imaging mechanism 71 in step St6-1 is preferably the same as the imaging width d3 before the removal of the peripheral portion We in step St6-0.
  • the outer side (outer region: left side of FIG. 21) is darker than the outer edge of the first wafer W, and the first wafer after removal of the peripheral portion We is dark.
  • the outer end portion of W that is, the inner side in the radial direction (the inner region: the right side in FIG. 21) of the peeled surface of the peripheral portion We becomes brighter.
  • the portion (intermediate region) that becomes the exposed surface (the bonding film Fw in the illustrated example) of the second wafer S exposed by removing the peripheral edge portion We has a brightness approximately intermediate between that of the outer region and the inner region. .
  • the inclined portion (between the inner region and the intermediate region) corresponding to the formation position of the crack C1 is darkened substantially as much as the outer region.
  • annular image corresponding to the peripheral edge We Statistical values of gray values in the regions (see annular regions Z1 and Z2 in FIG. 22), for example, average (Mean) and standard deviation (Sigma) are calculated (step St6-2 in FIG. 23).
  • step St6-2 based on the average value and standard deviation of the gray values calculated in step St6-2, it is detected whether or not the peripheral portion We has been appropriately removed from the first wafer W in the edge trimming of step St5 (Fig. 23 step St6-3). Specifically, the difference in gray value between the outer edge portions (the annular region Z1 and the annular region Z2) of the first wafer W before and after the removal of the peripheral portion We acquired in step St6-2 is calculated.
  • the gray value of the annular region Z2 obtained from the imaging result after the peripheral edge We is removed is the same as the image captured before the peripheral edge We is removed. It is believed that the gray values of the annular region Z1 obtained from the results have changed.
  • the peripheral edge portion We is the entire circumference of the first wafer W. It is judged that it is properly removed by On the other hand, if the gray value does not change in a portion of the first wafer W in the circumferential direction, it is determined that the peripheral edge portion We has not been properly removed in the portion where the gray value has not changed.
  • step St6-3 If it is determined in step St6-3 that the peripheral edge We has not been properly removed, the blade B is inserted again into the unpeeled portion of the peripheral edge We, as described above. Alternatively, the superimposed wafer T is carried out from the inside of the edge removing device 70, and the superimposed wafer T is discarded or recovered. On the other hand, if it is determined that the peripheral edge portion We has been properly removed, a series of inspections of the removal status of the peripheral edge portion We are finished, and the overlapped wafer T is unloaded from the peripheral edge removing device 70 .
  • whether or not the peripheral edge portion We has been appropriately removed is inspected by comparing the gray values obtained from the images before and after the edge trimming captured inside the peripheral edge removing device 70.
  • the inspection method is not limited to this. Specifically, instead of comparing the gray values obtained from the edge-trimmed image with the gray values obtained from the pre-edge-trimmed image, In other words, the threshold value (third threshold value) set based on the result of edge trimming of other superposed wafers T is used as a comparison object to inspect whether or not the peripheral portion We has been appropriately removed. good. In such a case, the imaging of the outer edge of the first wafer W before edge trimming in the edge removal device 70 (step St6-0 in FIG. 23) can be omitted as appropriate.
  • the inspection is performed inside the peripheral edge removing device 70, but the inspection may be performed using an inspection device (not shown) provided independently outside the peripheral edge removing device 70.
  • an inspection device not shown
  • the inspection device that inspects the removal status of the peripheral edge portion We, even if the inspection of the unbonded area Ae and/or the inspection of the modified peripheral layer M1 and the crack C1 are further performed. good.

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JP2021068867A (ja) * 2019-10-28 2021-04-30 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP2021103725A (ja) * 2019-12-25 2021-07-15 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025079432A1 (ja) * 2023-10-10 2025-04-17 東京エレクトロン株式会社 処理方法、処理システム及び検査装置

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