JP7784443B2 - 処理方法及び処理システム - Google Patents

処理方法及び処理システム

Info

Publication number
JP7784443B2
JP7784443B2 JP2023557937A JP2023557937A JP7784443B2 JP 7784443 B2 JP7784443 B2 JP 7784443B2 JP 2023557937 A JP2023557937 A JP 2023557937A JP 2023557937 A JP2023557937 A JP 2023557937A JP 7784443 B2 JP7784443 B2 JP 7784443B2
Authority
JP
Japan
Prior art keywords
substrate
peripheral
wafer
unbonded region
crack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023557937A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023079956A5 (https=
JPWO2023079956A1 (https=
Inventor
和哉 久野
義広 川口
豪介 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2023079956A1 publication Critical patent/JPWO2023079956A1/ja
Publication of JPWO2023079956A5 publication Critical patent/JPWO2023079956A5/ja
Priority to JP2025210279A priority Critical patent/JP2026048725A/ja
Application granted granted Critical
Publication of JP7784443B2 publication Critical patent/JP7784443B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/11—Region-based segmentation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20021—Dividing image into blocks, subimages or windows
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Quality & Reliability (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2023557937A 2021-11-02 2022-10-19 処理方法及び処理システム Active JP7784443B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025210279A JP2026048725A (ja) 2021-11-02 2025-12-01 処理方法及び処理システム

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021179529 2021-11-02
JP2021179529 2021-11-02
PCT/JP2022/038885 WO2023079956A1 (ja) 2021-11-02 2022-10-19 処理方法及び処理システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025210279A Division JP2026048725A (ja) 2021-11-02 2025-12-01 処理方法及び処理システム

Publications (3)

Publication Number Publication Date
JPWO2023079956A1 JPWO2023079956A1 (https=) 2023-05-11
JPWO2023079956A5 JPWO2023079956A5 (https=) 2024-07-08
JP7784443B2 true JP7784443B2 (ja) 2025-12-11

Family

ID=86240952

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023557937A Active JP7784443B2 (ja) 2021-11-02 2022-10-19 処理方法及び処理システム
JP2025210279A Pending JP2026048725A (ja) 2021-11-02 2025-12-01 処理方法及び処理システム

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025210279A Pending JP2026048725A (ja) 2021-11-02 2025-12-01 処理方法及び処理システム

Country Status (6)

Country Link
US (1) US20240416450A1 (https=)
JP (2) JP7784443B2 (https=)
KR (1) KR20240107142A (https=)
CN (1) CN118160072A (https=)
TW (1) TW202331793A (https=)
WO (1) WO2023079956A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024060329A (ja) * 2022-10-19 2024-05-02 シンフォニアテクノロジー株式会社 マッピング装置及び基板収容状態判定方法
WO2025079432A1 (ja) * 2023-10-10 2025-04-17 東京エレクトロン株式会社 処理方法、処理システム及び検査装置
TWI876690B (zh) * 2023-11-23 2025-03-11 聚嶸科技股份有限公司 晶片接合設備以及晶片接合方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020136448A (ja) 2019-02-19 2020-08-31 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2020136442A (ja) 2019-02-18 2020-08-31 東京エレクトロン株式会社 レーザー加工装置の設定方法、レーザー加工方法、レーザー加工装置、薄化システム、および基板処理方法
WO2020184179A1 (ja) 2019-03-08 2020-09-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021068867A (ja) 2019-10-28 2021-04-30 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP2021103725A (ja) 2019-12-25 2021-07-15 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118263105A (zh) 2018-03-14 2024-06-28 东京毅力科创株式会社 基板处理系统、基板处理方法以及计算机存储介质

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020136442A (ja) 2019-02-18 2020-08-31 東京エレクトロン株式会社 レーザー加工装置の設定方法、レーザー加工方法、レーザー加工装置、薄化システム、および基板処理方法
JP2020136448A (ja) 2019-02-19 2020-08-31 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2020184179A1 (ja) 2019-03-08 2020-09-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021068867A (ja) 2019-10-28 2021-04-30 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP2021103725A (ja) 2019-12-25 2021-07-15 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Also Published As

Publication number Publication date
WO2023079956A1 (ja) 2023-05-11
US20240416450A1 (en) 2024-12-19
CN118160072A (zh) 2024-06-07
JP2026048725A (ja) 2026-03-17
KR20240107142A (ko) 2024-07-08
TW202331793A (zh) 2023-08-01
JPWO2023079956A1 (https=) 2023-05-11

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