WO2023074615A1 - 温度センサ付き水晶振動デバイス - Google Patents

温度センサ付き水晶振動デバイス Download PDF

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Publication number
WO2023074615A1
WO2023074615A1 PCT/JP2022/039502 JP2022039502W WO2023074615A1 WO 2023074615 A1 WO2023074615 A1 WO 2023074615A1 JP 2022039502 W JP2022039502 W JP 2022039502W WO 2023074615 A1 WO2023074615 A1 WO 2023074615A1
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Prior art keywords
crystal
sealing member
thermistor
temperature sensor
plate
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PCT/JP2022/039502
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English (en)
French (fr)
Japanese (ja)
Inventor
賢周 森本
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Daishinku Corp
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Daishinku Corp
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Priority to JP2023556421A priority Critical patent/JP7687430B2/ja
Publication of WO2023074615A1 publication Critical patent/WO2023074615A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz

Definitions

  • the present invention relates to a crystal oscillator device with a temperature sensor in which a temperature sensor is attached to the crystal oscillator device.
  • Such a crystal oscillator with a temperature sensor has a configuration in which the crystal oscillator is housed in a package made of ceramic, and a thermistor is attached to the outside of the package to detect the environmental temperature surrounding the crystal oscillator (Patent Document 1).
  • the above electronic devices may be required to be smaller and thinner, and in such cases, ultra-compact or ultra-thin crystal oscillator devices are required.
  • ultra-compact or ultra-thin crystal oscillator devices are required.
  • ultra-miniature or ultra-thin crystal oscillator devices are required.
  • Patent Document 2 discloses an example in which a thermistor is used as a function section in a three-layered crystal oscillator.
  • Patent Document 1 a ceramic package is used in which a storage portion that is open in the vertical direction is formed. A crystal oscillator is accommodated in the upper opening and electrically connected to the package, while a thermistor is accommodated in the lower opening and electrically connected to the package.
  • An object of the present invention is to provide a crystal oscillator device with a temperature sensor.
  • a crystal oscillation device with a temperature sensor includes a crystal oscillation plate, a first sealing member bonded to an upper surface of the crystal oscillation plate, a second sealing member bonded to a lower surface of the crystal oscillation plate, and a thermistor flat single plate as a temperature sensor, wherein a plurality of electrode pads are formed on the first sealing member and the thermistor flat single plate
  • the electrode pads of the first sealing member and the electrode pads of the thermistor flat single plate are surface-bonded with a conductive resin adhesive, and the first sealing member and the thermistor flat single plate are bonded with the resin adhesive.
  • the thermistor flat single plate means a flat thermistor plate having a single-layer configuration.
  • the quartz crystal oscillation device has a three-layer configuration in which the plate-like crystal oscillation plate, the first sealing member, and the second sealing member are joined together, so that a thin crystal oscillation device configuration can be achieved.
  • the thermistor flat single plate is used as a temperature sensor and bonded together, not only stable electrical characteristics can be obtained, but also the thickness and size can be reduced compared to using a general-purpose laminated thermistor. It is possible to obtain a crystal oscillation device with a temperature sensor corresponding to.
  • the thermistor flat single plate when mounting the thermistor flat single plate as a temperature sensor on the crystal oscillation device, half or more (50% to 100%) of the plane view area of the thermistor flat single plate is provided on the surface of the first sealing member of the crystal oscillation device. ) are surface-bonded with the conductive resin adhesive and the resin adhesive, so that heat can be sufficiently circulated between the crystal oscillation device and the thermistor flat single plate as a temperature sensor, so that the crystal oscillation device There is no difference between the environmental temperature sensed by the thermistor flat plate and the environmental temperature sensed by the thermistor flat single plate, and appropriate temperature detection can be performed.
  • the thermistor flat plate tends to weaken in strength as it is made thinner. It can absorb stress and impact on the plate, and can eliminate cracking and chipping of the thermistor flat single plate.
  • the first sealing member and the thermistor flat single plate form electrode pads with high thermal conductivity, and are joined by a conductive resin adhesive with high thermal conductivity compared to resin adhesive. , heat can be smoothly circulated between the crystal oscillation device and the thermistor flat single plate while reacting more sensitively to changes in the external environment temperature. Therefore, the temperature of the crystal oscillator device can be detected more accurately. As a result, more accurate temperature compensation can be achieved, and a highly reliable crystal oscillation device with stable electrical characteristics can be obtained.
  • the crystal vibration plate tends to easily follow environmental temperature changes. By combining them, it is possible to obtain a more desirable configuration that can detect temperature information corresponding to temperature fluctuations of the crystal plate.
  • the crystal diaphragm includes a vibrating portion formed with a pair of excitation electrodes, a holding portion projecting from at least one portion of the vibrating portion, and a through hole surrounding the outer periphery of the vibrating portion. and a frame portion that surrounds the perimeter of the through portion and is connected to the holding portion, the first sealing member and the second sealing member have a plate-like configuration, and the crystal The frame portion of the crystal plate and the first sealing member and the second sealing member are mechanically separated from each other in a state where the vibrating portion of the vibrating plate and the first sealing member and the second sealing member are not in contact with each other.
  • the thermistor flat single plate is surface-bonded with the resin adhesive in a region including the center of gravity of the first sealing member in a portion overlapping the vibrating portion of the crystal diaphragm in plan view, and the crystal A portion overlapping the frame portion of the diaphragm in plan view may be surface-bonded with the conductive resin adhesive.
  • the vibrating portion of the crystal diaphragm is connected by the holding portion projecting from at least one location, and is in a state of not coming into contact with the first sealing member and the second sealing member. Since the frame portion of the diaphragm is mechanically joined to the first sealing member and the second sealing member, the vibrating portion of the crystal diaphragm is less susceptible to external stress. In particular, the characteristics of the vibrating portion are stabilized because the influence of the external stress caused by the conductive resin adhesive or the resin adhesive that is generated when the thermistor flat single plates are joined is less likely to be transmitted to the vibrating portion.
  • the thermistor flat single plate is surface-bonded with a resin adhesive in a region including the center of gravity of the first sealing member in a portion overlapping the vibrating portion of the crystal diaphragm in plan view, the thermistor flat single plate is bonded.
  • the thermistor flat single plate is bonded.
  • heat can be efficiently circulated between the crystal oscillation device and the thermistor flat single plate through the center of gravity of the first sealing member without waste, heat radiation that is biased to one side is suppressed, and the mutual environment is improved. It becomes difficult for a temperature difference to occur.
  • the first sealing member does not extend from the crystal diaphragm.
  • the conductive resin adhesive has a structure in which a conductive filler made of metal powder, metal pieces, or the like is added to the resin adhesive. Due to its good thermal conductivity, the temperature sensor can detect the temperature change of the crystal oscillator device with little time lag.
  • the thermistor flat single plate may be coated with a resin material.
  • a resin material may be formed to cover the entire outer surface of the thermistor flat single plate.
  • the temperature information (for example, current value, voltage value, resistance value, etc.) detected by the thermistor flat single plate as a temperature sensor is connected to the outside through an independent terminal. Then, by using an external compensating circuit or the like, the frequency information in the crystal oscillation device can be appropriately temperature-compensated, and an accurate frequency can be obtained.
  • a plurality of electrode pads are formed on the joint surface between the thermistor flat single plate and the first sealing member, and the total area of each electrode pad is 40% to 85% of the plan view area of the thermistor flat single plate.
  • the plane view area refers to the projected area
  • the area ratio refers to the total projected area of each electrode pad with respect to the projected area of the thermistor flat single plate.
  • the electrode pads formed on the thermistor flat single plate have a larger area than the thermistor flat single plate in plan view.
  • the contact area becomes smaller, the temperature detection accuracy of the crystal oscillation device is lowered. Therefore, when the total area of each electrode pad is 40% to 85% of the area of the thermistor flat single plate, stable temperature detection can be performed.
  • the thermistor flat single plate as the temperature sensor includes a plate-like thermistor flat single plate (NTC thermistor flat single plate), a pair of electrode pads formed on one main surface of the thermistor flat single plate, and the pair of It is composed of one common electrode pad formed almost entirely on the other main surface facing the electrode pad, and the pair of electrode pads is conductively joined to the electrode pad of the first sealing member. There may be.
  • NTC thermistor flat single plate a plate-like thermistor flat single plate
  • the pair of It is composed of one common electrode pad formed almost entirely on the other main surface facing the electrode pad, and the pair of electrode pads is conductively joined to the electrode pad of the first sealing member.
  • the common electrode pad formed almost entirely on the other main surface of the thermistor flat single plate can be superimposed on the vibrating portion of the crystal diaphragm, and unnecessary noise and the like reach the vibrating portion. It can function as a shield that blocks the
  • the thermistor flat single plate is manufactured by thick film formation technology such as screen printing technology or doctor blade technology and firing technology, and the Mn-Fe-Ni material is sintered into a plate-shaped thermistor wafer.
  • An electrode film (metal film) is formed on this plate-like thermistor wafer by sputtering, and patterning is performed using a photolithographic technique.
  • the plate-shaped thermistor wafer is divided into individual thermistor flat single plates.
  • the material of the thermistor may be Mn--Fe based material or the like.
  • NTC thermistors have a structure in which multiple layers are laminated on the thermistor material with electrode (metal) films interposed by lamination technology. metal) film is formed. A pair of electrode pads are formed on one main surface of the thermistor flat single plate, and one common electrode pad is formed on substantially the entire surface of the other main surface facing the pair of electrode pads. As a result, an extremely thin thermistor flat single plate can be obtained.
  • electrode films are formed by a PVD film forming technique such as sputtering.
  • the quartz crystal diaphragm may be an AT-cut or SC-cut quartz crystal diaphragm, or may be an XY-cut quartz crystal diaphragm or the like.
  • a crystal oscillation device with a temperature sensor that is compatible with ultra-miniaturization and ultra-thinness, appropriately detects temperature fluctuations related to the crystal oscillation device, and has excellent electrical characteristics.
  • FIG. 1 is an exploded perspective view showing each configuration of a crystal oscillation device with a temperature sensor according to this embodiment
  • FIG. FIG. 4 is a plan view of one main surface of the crystal diaphragm
  • FIG. 10 is a plan view of the other main surface (bottom surface) of the second sealing member
  • FIG. 2 is a schematic cross-sectional view when each component in FIG. 1 is assembled
  • FIG. 4 is a plan view of one main surface of the thermistor flat single plate
  • FIG. 4 is a plan view of the other main surface of the thermistor flat single plate
  • FIG. 10 is a schematic cross-sectional view of a crystal oscillation device with a temperature sensor according to another embodiment 1
  • FIG. 11 is a schematic cross-sectional view of a crystal oscillator device with a temperature sensor according to another embodiment 2;
  • a crystal vibration device Xtl with a temperature sensor comprises a crystal vibration device and a temperature sensor.
  • the crystal vibration device Xtl includes a crystal vibration plate 1, a first sealing member 2, It is composed of a second sealing member 3, and has a configuration in which the first sealing member 2, the crystal diaphragm 1, and the second sealing member 3 are stacked in order.
  • the temperature sensor 4 is conductively bonded to the upper surface of the crystal oscillation device Xtl.
  • the crystal diaphragm 1 is made of an AT-cut crystal diaphragm, and has a rectangular plate shape as a whole.
  • the crystal plate 1 includes a vibrating portion 11, holding portions 13 and 13t connected to two corner portions of the vibrating portion 11, and a frame body arranged on the outer periphery of the vibrating portion 11 and connected to the holding portions 13 and 13t.
  • Part 12 A penetrating portion 14 is formed in a circumferential shape between the vibrating portion 11 and the frame portion 12 except for the holding portions 13 and 13t.
  • the vibrating portion 11 has a rectangular shape with long sides and short sides facing each other, and has four corners. Note that the vibrating portion 11 may be square when viewed in plan. Rectangular excitation electrodes 111 and 112 are formed on one principal surface and the other principal surface (front and back principal surfaces) in a substantially central portion of the vibrating portion 11 . Strip-like extraction electrodes 111a and 112a are connected to the corners of the excitation electrodes 111 and 112 and are extracted toward both ends of one side (corners of the vibrating portion). The lead-out electrode 111a and the lead-out electrode 112a pass through the holding portion 13 and the holding portion 13t, respectively, and are led out to the frame body portion 12. Finally, terminals formed in the second sealing member 3 to be described later are connected. It is drawn out to electrodes 31 and 32 .
  • the extraction electrode 111a passes through the surface of the holding portion 13 and is extracted to the other main surface through a metal via (penetrating metal) V1 formed in the frame portion 12. It is connected to a metal via V2 formed in the stop member 3 .
  • the metal via V2 is electrically connected to a terminal electrode 31 formed on the other main surface of the second sealing member 3.
  • the extraction electrode 112a passes through the back surface of the holding portion 13t and is extracted to the other surface of the crystal diaphragm 1, and is electrically connected to the metal via V3 formed in the second sealing member 3 facing the same.
  • the metal via V3 is electrically connected to a terminal electrode 32 formed on the other main surface of the second sealing member 3. As shown in FIG.
  • excitation electrodes 111, 112 and extraction electrodes 111a, 112a are composed of a plurality of layers of metal films. Specific examples of the thickness of each metal film include a Ti film of 5 nm and an Au film of 200 nm, but these may be changed according to desired characteristics.
  • a thick portion 11 a is formed on one end side of the vibrating portion 11 .
  • the thick portion 11a is one end side in the X-axis direction and extends in the Z′-axis direction and is formed over the entire one end side.
  • the thick portion 11 a is formed thicker than the vibrating portion 11 .
  • a holding portion 13 is provided at one corner C1 of the vibrating portion 11, and a holding portion 13t is provided at the other corner C2. It is connected to part 12.
  • the vibrating portion 11, the holding portions 13 and 13t, and the frame portion 12 are integrally formed from a crystal plate using photolithography technology and wet etching technology. A dry etching technique may be used instead of the wet etching.
  • the holding portion 13 is thicker than the vibrating portion 11 and the thick portion 11a.
  • a taper T3 on an inclined surface is formed also from the holding portion 13 to the holding portion 13 respectively.
  • the holding portion 13 is connected to the frame portion 12, and the upper surface of the frame portion 12 from the holding portion 13 is tapered T1.
  • the thicknesses of the vibrating portion 11 ⁇ thick portion 11a ⁇ holding portion 13 ⁇ frame portion 12 are set.
  • the thick portion 11a and the holding portion 13 may have the same thickness. Formation of each of these tapers can obtuse the boundary region. In the case where the step of the boundary region is small and the risk of iso-disconnection is low, there is no practical problem even if the taper is not formed.
  • the crystal plate 1 Specific dimensional examples of the crystal plate 1 are shown below.
  • a rectangular AT-cut crystal plate is used for the crystal plate 1, and its outer dimensions are 1.2 mm wide and 1.0 mm long.
  • the width is 0.2 mm in width and 0.1 mm in length
  • the dimensions of the holding portion 13 are 0.05 mm in width and 0.15 mm in length.
  • 04 mm the thickness of the holding portion 13 is 0.03 mm
  • the thickness of the thick portion 11a is 0.017 mm (17 ⁇ m)
  • the thickness of the vibrating portion 11 is 0.005 mm (5 ⁇ m).
  • the thickness of the thick portion 11a is preferably 10-odd ⁇ m or more with respect to the thickness of the vibrating portion 11 in order to ensure mechanical strength.
  • a configuration is adopted in which the thickness is reduced only from one main surface of the crystal plate 1.
  • a desired frequency is obtained by etching only from one main surface side.
  • etching only from one main surface side.
  • thin walls since the other main surface is not etched, it is possible to suppress deterioration in vibration characteristics due to roughening of the surface due to etching.
  • Circumferential seal films S11 and S21 are formed on the front and back outer peripheral end portions of the frame portion 12. These seal films are formed with a Ti film in contact with the crystal diaphragm 1 in the same manner as the electrode films described above. It has a multilayer structure in which an Au film is formed.
  • connection electrodes 121 and 122 are formed on the inner peripheral side of the frame portion 12 at positions apart from the holding portions 13 and 13t.
  • Each of the connection electrodes 121 and 122 is made of a strip-shaped metal film formed from the upper surface of the frame portion 12 through the inner surface thereof to the lower surface of the frame portion 12 .
  • the upper portions of these connection electrodes 121 and 122 are connected to terminal electrodes 31 and 32 of the first sealing member 2 via metal vias which will be described later. 42 are electrically connected.
  • the lower portions of the connection electrodes 121 and 122 are also electrically connected to terminal electrodes 33 and 34 of the second sealing member 3 through metal vias V4 and V5, respectively, which will be described later.
  • the first sealing member 2 is made of a rectangular plate-shaped AT-cut crystal plate, and has the same external shape and size as the crystal plate 1 .
  • a circumferential sealing film S12 corresponding to the sealing film S11 is formed on the other main surface of the first sealing member 2 (the surface facing the crystal diaphragm 1).
  • first sealing member 2 On one main surface of the first sealing member 2, rectangular electrode pads 21 and 22 having long sides and short sides are provided in parallel. , and the electrodes of the electrode pads 22 are led out to the other main surface through metal vias.
  • the electrode pads 21 and 22 are formed at the center positions of the short sides of the first sealing member 2 and at both end portions of the first sealing member 2 in the long side direction (the Z′-axis direction of the AT-cut crystal plate). there is Note that the electrode pads 21 and 22 may be formed at both ends of the short side (in the X-axis direction of the AT-cut crystal plate) according to the wiring configuration of the crystal plate 1 .
  • the second sealing member 3 is made of a rectangular plate-shaped AT-cut crystal plate, and has the same external shape and size as the crystal plate 1 .
  • a circumferential sealing film S22 corresponding to the sealing film S21 is formed on the surface of the second sealing member 3 facing the crystal diaphragm 1 .
  • Terminal electrodes 31 , 32 , 33 and 34 are formed on the surface of the second sealing member 3 that does not face the crystal plate 1 .
  • Each terminal electrode 31, 32, 33, 34 has a rectangular shape and is formed at each corner of the second sealing member.
  • the terminal electrodes 31, 32 are electrically connected to the excitation electrodes 111, 112, respectively, and the terminal electrodes 33, 34 are electrically connected to electrode pads 41, 42 of the temperature sensor 4, which will be described later.
  • the metal films forming these terminal electrodes have a laminated structure of a Ti film, a NiTi film and an Au film.
  • a metal via V2 is formed in the vicinity of the region corresponding to the holding portion 13 and penetrates from the front to the back, and is electrically connected to the metal via V1 described above.
  • a metal via V3 penetrating from the front to the back is formed in the vicinity of the region corresponding to the holding portion 13t.
  • the terminal electrodes 31 and 32 of the crystal oscillation device Xtl and the terminal electrodes 33 and 34 of the temperature sensor are aligned on the long side and face each other.
  • the two terminal electrodes 31 and 32 of the crystal oscillation device Xtl and the two terminal electrodes 33 and 34 of the temperature sensor may be diagonally arranged.
  • a temperature sensor 4 to be described later is electrically and mechanically connected to the electrode pads 21 and 22 of the first sealing member 2 .
  • the temperature sensor 4 is a rectangular thermistor flat single plate of NTC, and the rectangular thermistor flat single plate 40 has a thickness G2. 43 is formed, and rectangular electrode pads 41 and 42 are formed on the other main surface with a constant distance G1 in the long side direction.
  • the electrode pads 41 and 42 are formed at both ends of the thermistor flat single plate 40 in the long side direction including the center position of the short side of the thermistor flat single plate 40 .
  • the electrode pads 41 and 42 may be formed at both ends of the short side of the thermistor flat single plate 40 according to the wiring configuration.
  • the common electrode 43 formed on the entire surface of one main surface of the thermistor flat single plate 40 is connected to the vibrating portion 11 of the crystal vibrating plate 1 , more preferably the front and back excitation electrodes 111 and 112 formed on the vibrating portion 11 .
  • the vibrating portion 11 of the crystal vibrating plate 1 more preferably the front and back excitation electrodes 111 and 112 formed on the vibrating portion 11 .
  • one electrode pad 41 and the other electrode pad 42 formed on the thermistor flat single plate 40 constitute a terminal as a resistor. flows to the other electrode pad 42 via the .
  • the cross-sectional area of the conductive path is greatly increased, and the surfaces of the electrode pads 41 and 42 and the common electrode 43 can be opposed to each other. Voltage can also be improved.
  • the distance G2a between the electrode pad 41 and the common electrode 43, the distance G2b between the electrode pad 42 and the common electrode 43, and the distance G1 between the electrode pads 41 and 42 satisfy G2a+G2b ⁇ G1. It is set. By such setting, a desired resistance value can be obtained, and the accuracy of the temperature sensor 4 can be stabilized.
  • the electrode pads 41 and 42 formed on the temperature sensor 4 should be larger than the area of the temperature sensor 4. However, if the electrode pads 41 and 42 are too large, a short circuit between the adjacent electrode pads 41 and 42 or a short circuit due to the conductive resin adhesive is likely to occur. Become. If the contact area becomes smaller, the temperature detection accuracy of the crystal oscillation device Xtl is lowered. Therefore, the total area of the electrode pads 41 and 42 should be 40% to 85% of the area of the temperature sensor 4, depending on the desired resistance value, so that the temperature can be detected stably.
  • the size is 40% or less, the electrode pads 41 and 42 of the temperature sensor 4 become too small, making it impossible to accurately detect the temperature information of the crystal oscillation device Xtl. In this case, the resistance value becomes too high, and the temperature detection capability of the temperature sensor 4 may deteriorate. If the size is 85% or more, the risk of short circuit including the conductive resin adhesive increases, and if short circuit occurs, the temperature sensor 4 will not function.
  • the outer size of the temperature sensor 4 (the outer size of the thermistor) is 1.2 mm long side, 0.6 mm short side, and 0.05 mm thick, and its area is 0.72 mm 2 .
  • the external size of each of the electrode pads 41 and 42 formed on the thermistor flat single plate 40 is 0.6 mm on the long side (the short side of the thermistor flat single plate 40) and 0.4 mm on the short side (the long side of the thermistor flat single plate 40). side), and its area is 0.24 mm 2 .
  • the total area of the electrode pads 41 and 42 is set to about 66% of the area of the temperature sensor 4, and the distance G2a between the electrode pad 41 and the common electrode 43 and the electrode pad 42 are equal to each other.
  • the distance G2b between the common electrodes 43 is set to 0.05 mm, and the distance G1 between the electrode pads 41 and 42 is set to 0.4 mm, so that G2a+G2b ⁇ G1 is established.
  • the outer size of the temperature sensor 4 (the outer size of the thermistor) is 0.8 mm long side, 0.6 mm short side, and 0.05 mm thick, and its area is 0.48 mm 2 .
  • the external size of each of the electrode pads 41 and 42 formed on the thermistor flat single plate 40 is 0.52 mm on the long side (the short side of the thermistor flat single plate 40) and 0.3 mm on the short side (the long side of the thermistor flat single plate 40). side), and its area is 0.156 mm 2 .
  • the total area of the electrode pads 41 and 42 is set to about 65% of the area of the temperature sensor 4, and the distance G2a between the electrode pad 41 and the common electrode and the electrode pad 42 are common.
  • the distance G2b between the electrodes 43 is set to 0.05 mm, and the distance G1 between the electrode pads 41 and 42 is set to 0.12 mm, so that G2a+G2b ⁇ G1 is established.
  • the outer size of the temperature sensor 4 (the outer size of the thermistor) is 0.7 mm long side, 0.6 mm short side, and 0.04 mm thick, and its area is 0.42 mm 2 .
  • the external size of each of the electrode pads 41 and 42 formed on the thermistor flat single plate 40 is 0.58 mm on the long side (the short side of the thermistor flat single plate 40) and 0.3 mm on the short side (the long side of the thermistor flat single plate 40). side), and its area is 0.174 mm 2 .
  • the total area of the electrode pads 41 and 42 is set to about 83% of the area of the temperature sensor 4, and the distance G2a between the electrode pad 41 and the common electrode and the electrode pad 42 are common.
  • the distance G2b between the electrodes 43 is set to 0.04 mm, and the distance G1 between the electrode pads 41 and 42 is set to 0.09 mm, so that G2a+G2b ⁇ G1 holds.
  • the above dimensions may be appropriately designed according to the size and characteristics of the crystal oscillation device and the required specifications of the crystal oscillation device with a temperature sensor.
  • a Mn-Fe-Ni-based material is slurried with a binder or the like, and a green sheet of a plate-shaped thermistor wafer is produced by using a thick film forming technique such as a screen printing technique or a doctor blade technique. This is sintered into a plate-shaped thermistor wafer by a firing technique.
  • Mn--Co-based or Fe--Ni-based materials may be used instead of the Mn--Fe--Ni-based materials.
  • An electrode film is formed on this plate-shaped thermistor wafer by sputtering, and patterning is performed using photolithography technology.
  • a specific metal material a laminated structure of a Ti film, a NiTi film, and an Au film, which is the same as the metal film forming the terminal electrode, may be employed, or another metal film structure may be used.
  • the metal film structure of the electrode pads 41 and 42 and the metal film structure of the common electrode 43 may be different.
  • the metal film structure of the common electrode 43 may be a laminated structure of a Ti film and an Au film.
  • the single-layer flat thermistor plate 40 By forming a metal film on the single-layer flat thermistor plate 40 by thin film forming means such as sputtering, an extremely thin flat thermistor plate 40 can be obtained.
  • the surface roughness of the thermistor flat single plate 40 may be reduced by lapping and polishing the surface of the thermistor wafer in the form of a plate. With such a configuration, the electrode film (metal film) can be stably formed and the manufacturing accuracy can be improved, so that the performance of the temperature sensor 4 can be highly accurate.
  • the crystal oscillation device Xtl has a configuration in which a first sealing member 2, a crystal oscillation plate 1, and a second sealing member 3 are laminated in this order.
  • each of these constituent members is made of a crystal plate, and its surface is mirror-polished to a smooth surface.
  • the average surface roughness Ra is preferably 0.3 to 0.1 nm.
  • the first sealing member 2 made of brittle crystal and the crystal plate 1, and the crystal plate 1 and the second sealing member 3 made of brittle crystal are joined by surface treatment of the metal film Au. Then, the two are pressure-bonded by a diffusion bonding method (gold diffusion bonding). As a result, the vibrating portion 11 of the crystal diaphragm 1 is surrounded by the sealing members 2 and 3 and the frame portion 12 by the seal portions S1 (seal films S11 and S12) and S2 (seal films S21 and S22). is hermetically sealed.
  • the frame portion 12 of the crystal plate 1 and the first sealing member 2 and the second sealing member 3 are separated. 2 and the sealing member 3 are mechanically joined.
  • the inside of the airtight seal is a vacuum or an inert gas atmosphere.
  • the vibrating portion 11 of the crystal diaphragm 1 is connected by the holding portions 13 and 13t that are formed to protrude only at two locations, and the first sealing member 2 and the second sealing member 3 are connected to each other.
  • the frame portion 12 of the crystal diaphragm 1 is mechanically joined to the first sealing member 2 and the second sealing member 3, so that the vibrating portion of the crystal diaphragm 1 11 becomes less susceptible to external stress.
  • the characteristics of the vibrating portion 11 are stabilized because the influence of the external stress caused by the conductive resin adhesive R1 or the resin adhesive R2 generated when the thermistor flat single plate 40 is joined is less likely to be transmitted to the vibrating portion.
  • a temperature sensor 4 is mounted on the upper surface of the crystal oscillation device Xtl having the above configuration, that is, one main surface of the first sealing member 2 .
  • the electrode pads 21 and 22 formed on the upper surface of the crystal oscillation device Xtl and the electrode pads 41 and 42 formed on the temperature sensor 4 consisting of the thermistor flat single plate 40 are surface-bonded with conductive resin adhesives R1 and R1.
  • the conductive resin adhesive R1 is surface-bonded at the portion overlapping the frame portion 12 of the crystal diaphragm 1 in plan view.
  • the electrode pads 21 and 22 are configured to have a larger area than the electrode pads 41 and 42, so that the conductive resin adhesives R1 and R1 conductively bond the crystal oscillation device Xtl and the temperature sensor 4 in a state of having fillets. Therefore, the bonding strength between the two can be improved.
  • the conductive resin adhesive R1 is, for example, a paste-like silicone-based resin bonding material to which a conductive filler such as silver powder or silver flakes is added, and has excellent thermal conductivity.
  • the temperature sensor 4 detects the space between the conductive resin adhesives R1 and R1 in a region including the center of gravity O of the first sealing member 2 in a portion overlapping the vibrating portion 11 of the crystal plate 1 in plan view.
  • the first sealing member 2 and the temperature sensor 4 are surface-bonded with a resin adhesive R2 so as to fill the area.
  • the resin adhesive R2 is made of, for example, a paste-like epoxy-based resin bonding material, has a lower thermal conductivity than the conductive resin adhesive R1, and has a lower pencil hardness than the conductive resin adhesive R1.
  • a soft (low pencil hardness) conductive resin adhesive R1 may be arranged at both ends of the crystal axis in the axial direction where the coefficient of thermal expansion is larger.
  • the plane is the X-axis and the Z'-axis, but since the coefficient of thermal expansion is smaller in the Z'-axis direction, A softer conductive resin adhesive R1 may be placed.
  • the thermistor flat single plate 40 made of Mn--Fe--Ni material has a smaller thermal expansion coefficient than the first sealing member 2 made of crystal, and the difference in thermal expansion in the long side direction is particularly large. Therefore, a softer conductive resin adhesive R1 is placed on both ends in the long side direction to reduce the degree of influence of thermal stress.
  • more than half of the planar view area of the temperature sensor 4 is surface-bonded to the surface of the first sealing member 2 with the conductive resin adhesive R1 and the resin adhesive R2. Specifically, about 66% of the planar view area of the temperature sensor 4 is surface-bonded with the conductive resin adhesive R1, and about 30% of the planar view area of the temperature sensor 4 is surface-bonded with the resin adhesive R2. , about 96% of the planar view area of the temperature sensor 4 is surface-bonded in total.
  • the electrical/mechanical bonding and mechanical bonding between the crystal oscillation device Xtl and the thermistor flat single plate 40 are performed only by each resin adhesive (conductive resin adhesive R1 and resin adhesive R2).
  • the face-bonding makes it possible to absorb stress and impact on the thermistor flat single plate 40, which tends to weaken in strength due to thinning, and eliminate cracking and chipping of the thermistor flat single plate 40. can.
  • the crystal vibration device Xt1 is controlled by the temperature sensor 4. Temperature detection can be measured with high accuracy with little time lag.
  • the planar view area of the total surface bonding by these two types of resin adhesives should be at least 50% or more.
  • the thermistor flat single plate 40 is surface-bonded with the resin adhesive R2 in a region including the center of gravity of the first sealing member 2 in a portion overlapping the vibrating portion 11 of the crystal diaphragm 1 in a plan view, the thermistor flat single plate 40 is Not only is it difficult to transmit the influence of the external stress due to the resin adhesive R2 generated when the single plates 40 are joined to the vibrating portion 11, but it is also possible to prevent the external stress from being strongly applied to the thermistor flat single plate 40 itself.
  • the thermistor flat single plate 40 is surface-bonded with a conductive resin adhesive R1 having high thermal conductivity at a portion overlapping the frame body portion 12 of the crystal diaphragm 1 in plan view, the first sealing member 2 By promoting the direct heat transfer from the crystal plate 1 to the quartz plate 1, the heat flows smoothly between the agile quartz crystal device Xtl and the thermistor flat single plate 40, which can respond to changes in the external environment temperature. be able to do it. Therefore, the temperature related to the crystal oscillation device Xtl can be detected more accurately.
  • the conductive resin adhesive R1 and the resin adhesive R2 are not limited to the exemplified resin materials, and may be configured by optimally combining silicone-based resins, urethane-based resins, epoxy-based resins, and the like.
  • the quartz crystal oscillation device Xtl has a three-layer structure in which the plate-like crystal oscillation plate 1, the first sealing member 2, and the second sealing member 3 are bonded to each other.
  • the thermistor flat single plate 40 is used as the temperature sensor 4 and bonded, not only stable electrical characteristics can be obtained, but also the thickness and thickness can be reduced compared to the case of using a general-purpose laminated thermistor. It is possible to obtain a crystal oscillator device with a temperature sensor that can be miniaturized.
  • an electrode pad having a large thermal conductivity is formed, and a conductive resin adhesive R1 having a large thermal conductivity compared to the resin adhesive R2 is used.
  • temperature information for example, current value, voltage value, resistance value, etc.
  • thermistor flat single plate 40 as the temperature sensor 4 is connected to the outside through independent terminal electrodes 33 and 34. be done. Then, an external compensation circuit or the like can appropriately temperature-compensate the frequency information in the crystal oscillation device Xtl to obtain an accurate frequency.
  • the thick portion 11a is formed along substantially the entire length of one end side of the vibrating portion 11 where the holding portions 13 and 13t are formed, and the other end side is high.
  • the thickness of the thin diaphragm corresponds to the frequency. Therefore, the vibration excited by the vibrating portion 11 can be vibrated in a state that is less likely to be affected by the boundary conditions due to the thick portion 11a. It is possible to obtain a crystal diaphragm 1 that can be kept in good condition. Further, the mechanical strength of the vibrating portion 11 can be improved by the thick portion 11a.
  • the vibrating portion 11 of the present embodiment may have a configuration in which the thick portion 11a is not formed. In this case, the areas of the excitation electrodes 111 and 112 of the vibrating portion 11 can be made larger.
  • the holding portion 13 is thicker than the thick portion 11a or has the same thickness. It is considered as the formed composition. As mentioned above, this taper can obtuse the boundary. As a result, the extraction electrode 111a, which is extracted from the excitation electrode 111 to one end side of the crystal plate 1, is formed on the tapered portion and does not pass through the sharp corner region (stepped portion). It is possible to prevent deterioration of electrode continuity and electrode disconnection. This makes it possible to obtain a crystal plate 1 with good electrical characteristics.
  • the frame body portion 12 and the vibrating portion 11 are connected by a plurality of holding portions 13 and 13t. ing. Therefore, holding by a plurality of holding portions stabilizes the mechanical strength, and provision of the small (thin) holding portion 13t suppresses the vibration of the vibrating portion 11 from being hindered. As a result, deterioration of the electrical characteristics of the crystal oscillation device Xtl can be suppressed, and practical electrical performance can be ensured. Further, the present embodiment is not limited to the configuration in which the vibrating portion 11 is connected to the holding portion 13 only at one point.
  • the penetrating portion 14 may be replaced with a thin portion.
  • the vibrating portion 11 is connected to the frame portion 12 by the holding portion and the thin portion.
  • the multilayer structure of Ti and Au was exemplified as an example of the metal film of the excitation electrode and the metal film for sealing, but the metal film is not limited to this.
  • a multilayer structure of Ti, NiTi, and Au may be used.
  • the sealing members 2 and 3 and the crystal diaphragm 1 are bonded by diffusion bonding, for example, soldering using an AuSn alloy brazing material may be used, or other brazing material such as a Sn alloy may be used. Wax may be used.
  • the structure of the metal film is also different. For example, a structure in which an Ag or Cu film is formed on a Cr base layer, or a structure in which an alloy film with Au is formed may be used.
  • the first sealing member 2 and the second sealing member 3 are made of a quartz crystal plate. may be used.
  • a concave portion may be provided at a position facing the quartz plate 1 .
  • the temperature sensor 4 has a common electrode 43 formed entirely on one main surface and electrode pads 41 and 42 formed on the other main surface with a constant distance G1 in the long side direction.
  • a configuration in which only the split electrodes are formed on the other main surface may be adopted.
  • not only the NTC thermistor but also the PTC thermistor may be substituted.
  • FIG. 7 omits the detailed configuration of the crystal oscillation device Xtl.
  • the temperature sensor 4 is mounted on the upper surface of the crystal oscillation device Xtl, the configuration of the temperature sensor 4 is different from that of the above embodiment.
  • the temperature sensor 4 has electrode pads 44 and 45 formed on the other main surface of the thermistor flat single plate 40, and an inter-electrode gap G3 is formed. No electrode film is formed on one main surface of the . Therefore, a conductive path is formed between the electrode pads 44 and 45 and functions as a thermistor.
  • both electrode pads 44 and 45 are electrically surface-bonded, thereby thermally conducting. Both are bonded in a state of good quality.
  • a resin adhesive R2 having good thermal conductivity is filled between the conductive bonding materials.
  • the temperature sensor 4 made of the thermistor flat single plate 40 is covered with the resin material R3.
  • the resin material R3 covers the upper surface of the crystal oscillation device Xtl, and covers the temperature sensor 4, the electrode pads 23 and 24 provided on the crystal oscillation device Xtl, the conductive resin adhesive R1, and the resin adhesive R2. .
  • the resin material R3 used here has a structure in which a silica (SiO 2 ) filler is added to an epoxy resin, and has a lower thermal conductivity than the conductive resin adhesive R1.
  • the resin material R3, other than the epoxy resin other resin materials such as urethane resin and silicone resin may be used. With such a configuration, it is possible to obtain the effect of suppressing the heat detected by the temperature sensor 4 from escaping to the outside.
  • the temperature sensor 4 can detect the temperature variation of the crystal oscillation device Xtl via the conductive resin adhesive R1 and the resin adhesive R2 with little time lag. Since the temperature sensor 4 is coated with the resin material R3 having a lower thermal conductivity than the conductive resin adhesive R1 formed on the part, the temperature absorbed by the temperature sensor 4 does not leak to the outside. As a result, it is possible to accurately detect the operating temperature of the crystal oscillation device Xtl, so that highly accurate temperature detection can be performed.
  • an IC part having an oscillation circuit and a temperature compensation circuit may be mounted on the upper surface of the crystal oscillation device Xtl and electrically connected to the crystal oscillation device Xtl and the temperature sensor 4 .
  • FIG. 8 omits the detailed configuration of the crystal oscillation device Xtl.
  • the temperature sensor 4 is mounted on the upper surface of the crystal oscillation device Xtl. is different from the first embodiment.
  • Electrode pads 23 and 24 are formed on the upper surface of the first sealing member 2 . These electrode pads 23 and 24 are formed biased to the left side as viewed in the drawing, unlike the first embodiment (see FIG. 7). As a result, a region where no electrode pad is formed can be secured on the upper surface of the first sealing member 2 .
  • the area can be used as adjustment area 25 .
  • the adjustment region 25 can transmit an energy beam B such as a laser beam. Therefore, by irradiating the metal film formed on the crystal plate 1 with the energy beam B to partially remove the metal film, the frequency of the crystal vibration device Xtl can be adjusted.
  • an adjustment metal film is formed inside the first sealing member 2 in advance, and by irradiating the adjustment metal film with the energy beam B, the adjustment metal film is vaporized and formed on the crystal diaphragm 1.
  • the frequency of the crystal vibration device Xtl can be adjusted by adhering to the metal film that has been applied.
  • the entire upper surface (one main surface) of the first sealing member 2 is covered with a resin material R3.
  • the entire temperature sensor 4 is also covered with the resin material R3.
  • the resin material R3 may be formed only in the area where the temperature sensor 4 is mounted. In this case, since the adjustment region 25 is not covered with the resin material R3, there is an advantage that the frequency adjustment by the energy beam B can be performed after the temperature sensor 4 is joined.
  • the temperature sensor 4 is bonded to the crystal vibration device Xtl over substantially the entire other main surface thereof with the conductive resin adhesive R1 and the resin adhesive R2. Temperature changes can be reliably and accurately detected by the temperature sensor 4 . Also, by covering with the resin material R3, heat dissipation can be suppressed. With these configurations, it is possible to obtain a crystal oscillation device with a temperature sensor that can detect temperature with high accuracy. Furthermore, the frequency of the crystal oscillation device Xtl can be adjusted by the adjustment region 25 after hermetic sealing or after the temperature sensor 4 is attached, so that the electrical characteristics can be improved.
  • Xtl crystal oscillation device 1 crystal oscillation plate 11 oscillation part 111, 112 excitation electrode 111a, 112a extraction electrode 12 frame part 13, 13t holding part 14 penetration part 2 first sealing member 3 second sealing member 4 temperature sensor 40 thermistor Flat veneer S11, S12, S21, S22 Seal film S1, S2 Seal part T1, T2, T3 Taper V1, V2, V3, V4, V5 Metal via R1 Conductive resin adhesive R2 Resin adhesive R3 Resin material

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Measuring Fluid Pressure (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
PCT/JP2022/039502 2021-10-26 2022-10-24 温度センサ付き水晶振動デバイス Ceased WO2023074615A1 (ja)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009130665A (ja) * 2007-11-26 2009-06-11 Epson Toyocom Corp 圧電発振器
JP2009152717A (ja) * 2007-12-19 2009-07-09 Epson Toyocom Corp 圧電素子
JP2015073211A (ja) * 2013-10-03 2015-04-16 日本電波工業株式会社 圧電デバイス及び圧電デバイスの製造方法
JP2019211229A (ja) * 2018-05-31 2019-12-12 株式会社大真空 温度センサ、及びこれを備えた圧電振動デバイス

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154301A (ja) * 1997-08-07 1999-02-26 Murata Mfg Co Ltd チップ型サーミスタ
TWI466437B (zh) * 2010-03-29 2014-12-21 Kyocera Kinseki Corp Piezoelectric vibrator
JP2013106054A (ja) * 2011-11-10 2013-05-30 Daishinku Corp 圧電デバイス
JP5888347B2 (ja) * 2014-01-21 2016-03-22 株式会社大真空 圧電振動デバイス
JP5900582B1 (ja) * 2014-11-21 2016-04-06 株式会社大真空 圧電振動デバイス
JP6562320B2 (ja) * 2015-10-20 2019-08-21 株式会社村田製作所 水晶振動子及びその温度制御方法、並びに水晶発振器
JP2019114937A (ja) * 2017-12-25 2019-07-11 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
JP6601525B2 (ja) * 2018-03-28 2019-11-06 株式会社大真空 圧電振動デバイス
JP7083303B2 (ja) * 2018-11-27 2022-06-10 京セラ株式会社 圧電デバイス及び電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009130665A (ja) * 2007-11-26 2009-06-11 Epson Toyocom Corp 圧電発振器
JP2009152717A (ja) * 2007-12-19 2009-07-09 Epson Toyocom Corp 圧電素子
JP2015073211A (ja) * 2013-10-03 2015-04-16 日本電波工業株式会社 圧電デバイス及び圧電デバイスの製造方法
JP2019211229A (ja) * 2018-05-31 2019-12-12 株式会社大真空 温度センサ、及びこれを備えた圧電振動デバイス

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