WO2023043140A1 - Corps stratifié pour stratifié plaqué de cuivre, son procédé de fabrication et procédé de formation de micromotif - Google Patents

Corps stratifié pour stratifié plaqué de cuivre, son procédé de fabrication et procédé de formation de micromotif Download PDF

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Publication number
WO2023043140A1
WO2023043140A1 PCT/KR2022/013576 KR2022013576W WO2023043140A1 WO 2023043140 A1 WO2023043140 A1 WO 2023043140A1 KR 2022013576 W KR2022013576 W KR 2022013576W WO 2023043140 A1 WO2023043140 A1 WO 2023043140A1
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Prior art keywords
copper
photoresist coating
metal
metal nanoparticles
coating film
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PCT/KR2022/013576
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English (en)
Korean (ko)
Inventor
최영민
이수연
정성묵
김태수
황정희
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한국화학연구원
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Priority claimed from KR1020220113208A external-priority patent/KR20230039556A/ko
Application filed by 한국화학연구원 filed Critical 한국화학연구원
Publication of WO2023043140A1 publication Critical patent/WO2023043140A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Definitions

  • the present invention relates to a laminate for a copper clad laminate, a method for manufacturing the same, and a method for forming fine patterns. It relates to a laminate for a laminate and a method for manufacturing the same.
  • FPCB Flexible Printed Circuit Board
  • FCCL Flexible Copper Clad Laminate
  • PI polyimide
  • the casting method is currently widely used as a two-layer FCCL manufacturing method, and is a method of manufacturing a two-layer FCCL by applying a water layer of a liquid polyimide film precursor on a standard-produced copper thin film, drying and curing in a high-temperature oven.
  • this casting method uses commercially available copper foil, it has limitations in copper foil manufacturing technology as a disadvantage, and it is very difficult to control the copper foil thickness to 10 ⁇ m or less.
  • the plating method is a method of manufacturing an FCCL by forming a submicron-thick metal conductive layer called a seed layer on a commercially available polyimide film by sputtering or vapor deposition, and then performing electroplating to laminate a copper thin film.
  • the plating method has the advantage of being able to control the thickness of the copper foil, but since the process of creating the metal conductive layer is performed in a vacuum, high equipment costs are required, resulting in a high product unit price, and the adhesion strength between the copper thin film and the polyimide film is higher than other manufacturing methods. There is a downside to falling.
  • a dry film is first attached using FCCL, and then a mask having a desired circuit pattern is covered to form a pattern of the dry film through exposure and development processes. Thereafter, a process of removing the exposed portion of the copper thin film layer through an etchant and removing the dry film remaining on the pattern to leave a copper pattern is performed.
  • the problem in forming a circuit by this etching method is that the etching rate is non-uniform according to the etching depth, so that the upper and lower widths of the circuit are formed differently, and also, the more complex and narrower the fine pattern, the more short circuits occur between the patterns.
  • An object of the present invention is to provide a method for manufacturing a laminate for a copper clad laminate having a strong bonding force between a copper thin film and an insulating substrate and easily adjusting the thickness of the copper thin film.
  • Another object of the present invention is to provide a micro-pattern forming method capable of forming a micro-pattern through an easier and simpler process and a copper clad laminate having a micro-pattern.
  • a method of manufacturing a laminate for a copper clad laminate according to the present invention includes the steps of a) forming a photoresist coating film on an insulating substrate; and b) coating metal nanoparticles on the photoresist coating layer and embedding the coated metal nanoparticles in the photoresist coating layer.
  • step b) c) forming a copper thin film by plating copper on the photoresist coating film; may further include.
  • the average diameter D of the metal nanoparticles may be greater than the thickness T of the photoresist coating film.
  • the average diameter D of the metal nanoparticles may be smaller than or equal to the thickness T of the photoresist coating film.
  • the plating in step c) may be electroless plating.
  • the photoresist coating film in which the metal nanoparticles are embedded is irradiated with white light to perform photosintering. ; may be further included.
  • the embedding may be performed while the metal nanoparticles sink into the photoresist coating layer by softening the photoresist coating layer.
  • the embedding of step b) may be performed by heating a photoresist coating film on the surface of which metal nanoparticles are located.
  • the present invention includes a laminate for a copper-clad laminate manufactured by the method for manufacturing a laminate for a copper-clad laminate described above.
  • the present invention includes a copper clad laminate.
  • a copper clad laminate according to the present invention includes an insulating substrate; a composite film disposed on the insulating substrate and in which a photoresist coating film and metal nanoparticles are combined; and a copper plating film covering the surface of the composite film, wherein the metal nanoparticles of the composite film are exposed to the surface of the photoresist coating film without being embedded in the photoresist coating film and the recessed area embedded in the photoresist coating film. It includes a metal surface region forming a metal surface in the film.
  • the metal surface region may be light sintered.
  • the thickness of the composite film may be 50 to 500 nm.
  • the thickness of the copper plating film may be 1 to 30 ⁇ m.
  • the present invention includes a method for forming fine patterns.
  • a method of forming a fine pattern according to the present invention includes the steps of I) forming a photoresist coating film on an insulating substrate; II) exposing the photoresist coating film according to a predetermined pattern; III) coating metal nanoparticles on top of the exposed photoresist coating layer; IV) developing the photoresist coating film coated with metal nanoparticles; V) embedding the coated metal nanoparticles in the developed photoresist coating film; and VI) plating copper on the photoresist coating layer.
  • the average diameter D of the metal nanoparticles may be greater than the thickness T of the photoresist coating film, and the surface of the photoresist coating film is formed by the metal nanoparticles after the embedding. A metal surface region that is exposed to form a metal surface may be formed.
  • D may satisfy 1.05T to 1.50T.
  • the plating of step VI) may be electroless plating.
  • the metal surface region may act as a seed during plating in step VI).
  • the photoresist coating film in which the metal nanoparticles are embedded is irradiated with white light to perform photosintering; further comprising: can do.
  • the white light may be light in a 400 to 800 nm band (band light).
  • pulsed white light may be irradiated during photosintering.
  • the energy density of the irradiated white light may be 1.4 J/cm 2 or less.
  • the metal nanoparticles may be particles capped with a capping layer containing an organic acid.
  • the embedding of step V) may be performed by heating a photoresist coating film on which metal nanoparticles are located.
  • the photoresist coating film may be heated to a temperature equal to or higher than the softening temperature (Ts, °C) of the photoresist coating layer.
  • the heating temperature may satisfy Ts to 1.2Ts.
  • the metal of the metal nanoparticles may include copper, aluminum, nickel, tin, silver, or an alloy thereof.
  • the present invention may include a fine pattern manufactured by the above-described method for forming a fine pattern.
  • the present invention includes a copper clad laminate on which fine patterns are formed.
  • a copper clad laminate having a fine pattern according to the present invention includes an insulating substrate; a composite film positioned on the insulating substrate, in which a photoresist coating film and metal nanoparticles are combined and patterned; and a copper plating film having a pattern corresponding to the pattern of the composite film and covering an upper portion of the composite film, wherein the metal nanoparticles of the composite film are embedded in the photoresist coating film and not embedded in the photoresist coating film. It includes a metal surface region exposed to the surface of the coating film to form a metal surface in the composite film.
  • the metal surface region and the copper plating film may be integrally bonded.
  • a recessed area is in contact with the insulating substrate, and a metal surface area of one metal nanoparticle is a metal of another metal nanoparticle adjacent to the one metal nanoparticle. It may be in a melt-bonded state with the surface region.
  • the metal surface region may be light-sintered.
  • the thickness of the composite film may be 50 to 500 nm.
  • the thickness of the copper plating film may be 1 to 30 ⁇ m.
  • the metal of the metal nanoparticles may include copper, aluminum, nickel, tin, silver, or an alloy thereof.
  • the present invention includes a printed circuit board including the copper-clad laminate on which the above-described fine patterns are formed.
  • the manufacturing method of a laminate for a copper clad laminate according to the present invention includes a conjugation process of embedding metal nanoparticles in a photoresist, and has the advantage of improving adhesion between an insulating substrate and copper foil by such conjugation.
  • a part of the metal nanoparticles are not submerged in the photoresist, but a part of the metal nanoparticles protrude out of the photoresist, function as a seed during electroless plating, and are integrated with the copper thin film formed by plating, thereby further improving the adhesive strength between the insulating substrate and the copper foil.
  • the method for forming a fine pattern according to the present invention deviates from the conventional process of cutting a copper clad laminate, attaching a dry film, exposure, developing, etching, and peeling, during the manufacturing process of a copper clad laminate.
  • fine patterns can be formed in situ, and there is an advantage in that fine patterns can be formed by a simple and simple method of adding only exposure and development processes during the manufacturing process of the copper clad laminate.
  • the fine pattern formation method according to the present invention can form an extremely thin copper thin film with a thickness of several micrometers and a precise thin fine pattern with a minimum line width of 10 ⁇ m, and the patterned copper thin film has the advantage of being strongly bound to the insulating substrate.
  • Example 1 is a scanning electron microscope photograph of observing before and after embedding metal nanoparticles during the manufacturing process of a laminate for a flexible copper clad laminate according to Example 1 of the present invention.
  • FIG. 2 is a scanning electron microscope photograph of the surface and cross-section immediately after the electroless plating in Example 1 was observed.
  • 3 is an optical photograph of the manufactured flexible copper clad laminate.
  • Example 4 is a scanning electron microscope photograph of observing before and after embedding metal nanoparticles during the manufacturing process of a laminate for a flexible copper clad laminate according to Example 2 of the present invention.
  • Example 5 is a scanning electron microscope photograph of the surface and cross section immediately after the electroless plating performed in Example 2;
  • FIG. 6 is an optical photograph (sample photograph) and an optical microscope photograph (OM image) of a micropattern fabricated using a mask having a serpentine pattern having a line width of 60 ⁇ m, 40 ⁇ m, or 20 ⁇ m.
  • FIG. 7 is a view showing the results of performing a peel-off test using an adhesive tape before/after embedding copper nanoparticles during the manufacturing process of a laminate for a flexible copper clad laminate according to an embodiment of the present invention.
  • a method of manufacturing a laminate for a copper clad laminate according to the present invention includes the steps of a) forming a photoresist coating film on an insulating substrate; and b) coating metal nanoparticles on the photoresist coating layer and embedding the coated metal nanoparticles in the photoresist coating layer.
  • the method for manufacturing a laminate for a copper clad laminate according to the present invention forms a composite film by forming a photoresist coating film on an insulating substrate, applying metal nanoparticles to the photoresist coating film, and then embedding it into the coating film to form a composite film.
  • the formed copper thin film and the insulating substrate may be strongly bonded.
  • the insulating substrate may be a flexible substrate or a rigid substrate.
  • the copper thin film is formed on the upper portion of the composite film while substantially maintaining flexibility derived from the insulating substrate.
  • the thin film and the insulating substrate can be strongly bonded.
  • the laminate for the copper clad laminate may be a flexible copper clad laminate (FCCL).
  • step b) c) forming a copper thin film by plating a metal on the photoresist coating film; may be further performed, and by forming a copper thin film on the composite film using plating , it is possible to form a copper foil having a designed thickness from ultra-thin to thick.
  • the insulating substrate of step a) may be an insulating polymer substrate.
  • the insulating polymer of the substrate include polyester; epoxy; polyimide; polyethylene; polypropylene; condensation polymers such as polyamide, polyetherimide, polysulfone, polyethersulfone, polybenzoazol, and aromatic polysulfone; Or it may be a mixture thereof, but the present invention is not limited by the concrete material of the insulating polymer.
  • the insulating substrate may be a single layer or a composite (multilayer) film. In this case, the insulating substrate may be an insulating substrate surface-treated with a silicon compound to improve binding force with the photoresist coating film.
  • the silicon compound is hexamethyldisiloxane (HMDSO), tetraethylorthosilicate (TEOS), tetramethylorthosilicate (TMOS), tetramethyldisiloxane (TMDSO), hexa methyldisilazane (hexamethyldisilazane: TMDS) and the like, and surface treatment may be performed by forming a surface layer of a silicon compound on the surface of an insulating substrate through sputtering or plasma deposition.
  • HMDSO hexamethyldisiloxane
  • TEOS tetraethylorthosilicate
  • TMOS tetramethylorthosilicate
  • TMDSO tetramethyldisiloxane
  • TMDS hexamethyldisilazane
  • the present invention can significantly improve the binding force between the substrate and the copper foil by combining the metal nanoparticles and the photoresist and further photosintering the metal nanoparticles, the bare bare surface treatment for improving the binding force is not performed.
  • a (bare) polymer substrate may be used.
  • the thickness of the substrate may have various thicknesses from 10 0 ⁇ m level to 10 -1 cm level, and may be appropriately adjusted according to the use of the flexible copper clad laminate.
  • the photoresist coating layer may be a positive type photoresist coating layer that becomes soluble to drugs by exposure to light or a negative photoresist coating layer that becomes insoluble to drugs by exposure to light.
  • a photoresist coating film may be prepared by coating and drying (soft baking) a photoresist solution on a substrate.
  • the photoresist solution may include a conventional photosensitive organic material whose resistance to a solvent changes by a reaction induced by irradiated light.
  • the photosensitive organic material may include a photosensitive resin, a monomer (polyfunctional monomer) including a double bond, or a mixture thereof.
  • Photosensitive resins include polyhydroxystyrene-based resins, methacrylate-based resins, fluorine and silicone-based resins, and more specifically, norbornene/malic anhydride copolymer, norbornene/maleic acid.
  • Ester copolymer methacrylate polymer having an alicyclic structure as a side chain, maleic anhydride/norbornene/methacrylate terpolymer, maleic anhydride/vinyl ether derivative/acrylic acid ester terpolymer, methyladamantyl, butyllactone, Methacrylate terpolymer with norbornene as a side chain, methacrylate resin with camphor as a side chain, copolymer of methacrylate and butyl lactone with cholesterol as a side chain, copolymers of tetrafluoroethylene and norbornene derivatives polymers, acrylic resins having polyhedral oligomeric silsesquioxane (POSS) as a side chain, resins having a vinyl sulfonic acid derivative as a main backbone, hydroxystyrene/acrylate copolymers, and methacrylate copolymers having POSS as a side chain.
  • POSS polyhe
  • Polyfunctional monomers include polyhydric alcohol, acrylic acid, (meth)acrylic esters, tetraethyleneglycol diacrylate (TEGDA) and trimethylolpropane triacrylate (TMPTA). ), but may include one or more monomers selected from, but is not limited thereto.
  • the multifunctional monomer is combined with the above-mentioned photosensitive resin or styrene, methyl methacrylate, acrylic acid, ethyl acrylate, butyl acrylate, phenoxy di It can be used with a binder polymer such as ethylene glycol acrylate (phenoxy diethylene glycol acrylate).
  • the photoresist solution may further contain various known additives such as a photosensitive agent such as a photoacid generator and/or a photobase generator, along with a conventional photosensitive organic material.
  • additives include, but are not limited to, photosensitizers, photocrosslinking agents, photoinitiators, sensitizers, dissolution inhibitors, polymerization accelerators, thermal polymerization inhibitors, adhesion imparting agents, photocoloring agents, and/or dyes.
  • the solvent of the photoresist solution may be any solvent that stably dissolves the photosensitive organic material and does not react with the substrate.
  • commercially available products may be used to form a photoresist layer.
  • the application of the photoresist solution may be any method commonly used to form a photoresist layer in conventional photo-lithography, and as an example, spin coating may be used, but is not limited thereto.
  • drying to volatilize and remove the solvent of the coating film may be performed.
  • known conditions eg, 20 to 60 seconds
  • the photosensitive organic material of the photoresist solution does not substantially react to light irradiated for photosintering. It's good not to. That is, the wavelength of exposure (wavelength to be sensitized) of the photosensitive organic material may be different from the wavelength of light irradiated for photosintering.
  • the photosensitive organic material may be a UV (ultraviolet ray) photosensitive organic material
  • the photoresist coating film in step a) may be an ultraviolet curable photoresist coating film
  • the light irradiated during photosintering is white light (white light in which UV is cut-off). ) can be.
  • the application of the metal nanoparticles may be performed by applying a dispersion of metal nanoparticles on the photoresist coating layer.
  • the metal nanoparticle dispersion may contain metal nanoparticles and a dispersion medium, and the dispersion medium may be any solvent that easily disperses the metal nanoparticles and does not dissolve the photoresist coating film.
  • the application of the metal nanoparticles may be performed using any conventionally known method capable of evenly positioning the particle phase on the film-like substrate. For example, application of the metal nanoparticle dispersion may be performed using drop casting, spin coating, gravity-driven nanoparticle printing, or dipping, but is not limited thereto.
  • drying may be performed after application of the metal nanoparticle dispersion, but as will be described later, drying may also be performed simultaneously during the process of embedding the metal nanoparticles in the photoresist coating film.
  • drying may be performed independently, drying may be performed under conditions in which the photoresist coating film is not thermally damaged and the dispersion medium can be removed by volatilization. For example, drying may be performed at a temperature of 80 to 110° C. for 0.5 to 5 minutes, but the present invention is not limited by the drying conditions.
  • a mono layer of metal nanoparticles may be formed on the photoresist coating film by applying the metal nanoparticle dispersion.
  • the single layer of metal nanoparticles is closely packed with 4.5 to 6, substantially 5 to 6, of closest nanoparticles (average number of nearest neighbor) based on one metal nanoparticle. It may be a single layer.
  • the average diameter D of the metal nanoparticles applied to the photoresist coating layer may be greater than the thickness T of the photoresist coating layer.
  • the embedded metal nanoparticles may include an embedded region embedded in the photoresist coating film and a protruding region not embedded in the photoresist coating film and protruding from the top of the photoresist coating film.
  • the metal nanoparticles penetrating the photoresist coating film come into contact with the insulating substrate on the one hand, and on the other hand, they are integrated with the copper thin film formed by plating, so that the bond between the copper thin film and the insulating substrate can be strengthened.
  • T ⁇ D may be satisfied, and D may advantageously satisfy 1.05T to 2.0T, more advantageously 1.10T to 2.0T, and even more advantageously 1.2T to 1.8T.
  • the size (D) of the above-described metal nanoparticles is a size that can stably provide a metal surface even after embedding and can suppress unwanted irregularities from being formed on a copper thin film formed by plating due to excessive protrusion.
  • the thickness of the photoresist coating film may be 50 nm to 500 nm, substantially 50 nm to 300 nm, more substantially 100 nm to 400 nm, and more substantially 100 nm to 300 nm, but is not limited thereto, and a flexible copper clad laminate is utilized.
  • the thickness of the photoresist coating film may be appropriately adjusted in consideration of specific fields and uses.
  • T ⁇ D can be satisfied with finer metal nanoparticles, which is advantageous because a more homogeneous composite film combined with the photoresist can be formed, and a single metal nanoparticle
  • a higher amount of metal nanoparticles on a layer-by-layer basis can be complexed with the photoresist.
  • the average diameter D of the metal nanoparticles applied to the photoresist coating layer may be smaller than or equal to the thickness T of the photoresist coating layer.
  • the metal nanoparticles satisfying D ⁇ T may be stacked in the form of a dense multi-layer of metal nano-particles, and when the metal nano-particles are embedded in the photoresist coating film, the metal nano-particle multi-layer is formed under the multi-layer of metal nano particles.
  • the multi-layer of metal nanoparticles including the embedded metal nanoparticles may include an embedded region embedded in the photoresist coating layer and a protruding region not embedded in the photoresist coating layer and protruding above the photoresist coating layer as described above.
  • the protruding region may have a truncated grain when viewed only by itself.
  • Metal nanoparticles penetrating the photoresist coating film on the one hand, come into contact with the upper part of the metal nanoparticles included in the lower part of the multilayer, and on the other hand, are integrated with the copper thin film formed by plating, so that the copper thin film and the insulating substrate are in contact with each other. bonding can be solidified.
  • the metal of the metal nanoparticles may be copper, aluminum, nickel, tin, silver, or an alloy thereof, but during plating in step c), the metal nanoparticle region exposed to the surface of the composite film acts as a seed, As it is integrally bonded to the copper plating film, it is advantageous that it is copper, which is the same material as the copper plating film.
  • a step of embedding the coated metal nanoparticles in the photoresist coating layer may be performed. Embedding may be performed while the photoresist coating layer is softened and the metal nanoparticles sink into the photoresist coating layer.
  • the embedding in step b) may be performed by heating a photoresist coating film on which the metal nanoparticles are located.
  • the photoresist coating film on which the metal nanoparticles are located is heated to a temperature equal to or higher than the softening temperature of the photoresist, thereby softening the photoresist coating film and enabling embedding.
  • the heat treatment temperature for embedding may be Ts to 1.20Ts, specifically 1.05Ts to 1.10Ts based on the softening point Ts of the photoresist.
  • the metal nanoparticles When the photoresist is softened by heat treatment, the metal nanoparticles may sink into the photoresist due to gravity, and at this time, the metal nanoparticles satisfying the above D > T penetrate the photoresist coating film and come into contact with the insulating substrate.
  • the softening point of the photoresist may be VST (vicat softening temperature, air, 1 atm standard), and in detail, may be a VST softening point according to ASTM D 1525.
  • the metal nanoparticles that sink to one side of the substrate and are complexed with the photoresist can be integrated with the copper thin film formed by plating through the metal surface region serving as a seed during plating, Bonding force between copper thin films may increase.
  • the metal nanoparticles are placed inside the photoresist and the photoresist is combined.
  • a clean metal surface can be formed on the resist surface.
  • photoresist may be coated on the surface of the metal nanoparticle, it is difficult to provide a complete metal surface.
  • metal nanoparticles that are less miscible with photoresist are used to provide a metal surface, a relatively clean metal surface can be provided by application of a mixed solution, but the photoresist and the metal nanoparticle region embedded therein can be provided.
  • the binding force between the two is also low, so that the effect of strengthening the binding force by compounding is insignificant.
  • multiple layers including metal nanoparticles satisfying T ⁇ D or metal nanoparticles satisfying T ⁇ D are placed on the surface of the photoresist, and then the multilayer is deposited in the photoresist to perform the composite. In this case, the photoresist and the metal nanoparticles are strongly bound to each other, and a composite film having a clean metal surface due to the protruding metal nanoparticle region can be manufactured.
  • step b) and before step c) photosintering by irradiating white light to the photoresist coating film in which the metal nanoparticles are embedded may be performed.
  • the photosintering of the metal nanoparticles when the photosintering of the metal nanoparticles is performed after the embedding of the metal nanoparticles, the metal nanoparticles are instantly melted by the photosintering and more strongly bound between the insulating substrate and the metal nanoparticles, and at the same time, the metal nanoparticles are melted.
  • the nanoparticle regions (metal surface regions) exposed to the upper surface of the photoresist coating film in the particle are melt-bonded to each other, and in the composite film, the metal surface region integrated with the copper thin film is maximized, and at the same time, the melt-bonded metal surface regions and metal nanoparticles
  • the indented regions of the photoresist regions act as anchors, and thus the photoresist region is strongly bound to the insulating substrate, so that the bonding force between the copper thin film and the insulating substrate can be greatly improved.
  • Photosintering may be performed by irradiating white light to a photoresist coating film (composite film) in which metal nanoparticles are embedded. (cut-off) white light (400-800 nm band). Considering that conventional photocurable photoresist materials have UV curability, photosintering using white light in the 400-800nm band means that exposure and photosintering of the photoresist can be performed independently without affecting each other. will be.
  • the white light may be pulsed white light.
  • the pulse width may be 0.5 to 3 ms, and the pulse interval may be 0.5 to 1.5 sec, but is not necessarily limited thereto.
  • the photosintering may be performed at an energy density of 1.4 J/cm 2 or less to prevent damage to photoresist, which is an organic material, and to perform photosintering of metal nanoparticles during photosintering.
  • photoresist which is an organic material
  • photosintering of metal nanoparticles during photosintering.
  • surface regions of metal nanoparticles are instantly melted by high energy applied by irradiated light during photosintering and sintering is performed.
  • light is typically irradiated with an energy density of substantially 10 J/cm 2 or more.
  • damage to the photoresist cannot be avoided when irradiated with white light at a level of 10 J/cm 2 in a complex state with an organic photoresist.
  • the energy density of white light during photosintering may be 0.6 to 1.4 J/cm 2 , more substantially 0.7 to 1.2 J/cm 2 .
  • the metal nanoparticles complexed with the photoresist may be particles capped with a capping layer containing an organic acid.
  • a capping layer containing an organic acid As described above, in order to prevent damage to the photoresist during photosintering, it is necessary to limit the energy density of the irradiated white light. Surface oxidation of metal nanoparticles capped with a capping layer containing an organic acid is effectively suppressed, and even at such a low energy density, melt bonding between an insulating substrate and an impregnated region (an impregnated region of nanoparticles) and/or between a metal surface region Melt bonding can effectively occur.
  • the metal nanoparticle may include a metal core; and a capping layer covering the metal core and containing an organic acid, and the metal core may have a bare metal surface by preventing surface oxidation by the capping layer.
  • the organic acid has a form of at least one of linear, branched, and cyclic acids having 6 to 30 carbon atoms, and may be one or two or more selected from saturated or unsaturated acids.
  • organic acids include oleic acid, ricinoleic acid, stearic acid, hyhydroxystearic acid, linoleic acid, aminodecanoic acid, hydroxydecanoic acid, lauric acid, decenoic acid, undecenoic acid, palitoleic acid, hex
  • One or two or more may be selected from the group consisting of sildecanoic acid, hydroxypalmitic acid, hydroxymyristic acid, hydroxydecanoic acid, palmitoleic acid, and misris oleic acid, but is not limited thereto.
  • contents disclosed in Registered Patent Nos. 10-1418276, 10-1418276, and 10-1689679 of the present applicant may be referred to.
  • the metal of the metal nanoparticles may be copper, aluminum, nickel, tin, silver, or an alloy thereof, but the metal nanoparticle region exposed (protruded) to the photoresist surface acts as a seed during plating
  • the metal of the metal nanoparticles is preferably copper, which is the same material as the copper plating film.
  • the metal nanoparticle is copper
  • the copper nanoparticle or the copper nanoparticle multilayer including the copper nanoparticle is in contact with the insulating substrate and is embedded in the photoresist coating film and the protruding area protruding over the photoresist coating film to provide a metal surface ( protrusions)
  • the recessed region (and protrusion) in the composite film may also have a closely packed structure.
  • the metal nanoparticle is copper and photosintering is performed after embedding, by photosintering, the copper nanoparticles or the lower layer of the copper nanoparticle multilayer including the copper nanoparticles (substantially the embedded region of the copper nanoparticles) have insulating properties.
  • the protruding portion of one copper nanoparticle and the protruding portion of the copper nanoparticle(s) adjacent thereto may be melt-bonded to the substrate by photosintering.
  • particulate copper (corresponding to the incorporation region of copper nanoparticles) attached to (attached to) the insulating substrate through the photoresist coating film and extending from a plurality of particulate copper (integrated with the particulate copper), photo A metal surface region in the form of a porous film (copper porous film) covering the surface of the resist coating film may be formed.
  • the metal surface area integrated with the copper thin film can be maximized by photosintering, and the structure of the metal surface area integrated with the copper thin film and the recessed area extended with the metal surface area and combined with the photoresist and attached to the substrate can be maximized.
  • the bonding strength between the copper thin film and the insulating substrate can be remarkably improved.
  • a step of forming a copper thin film using plating on the composite film in which a metal surface and a photoresist surface coexist may be performed.
  • the plating may be electroless plating.
  • copper is plated by a reduction reaction. Electroless plating can easily fill the unevenness caused by the surface step between the copper surface and the photoresist surface and the unevenness of the copper surface itself, thereby producing a flat copper thin film. It is advantageous for manufacturing a thin and uniform copper thin film having a flat surface.
  • the electroless plating may be performed by immersing the photoresist coating film on which embedding has been performed or, advantageously, the photoresist coating film on which embedding and photosintering has been performed, in a copper plating solution.
  • the copper plating solution may contain a copper precursor, a reducing agent and a complexing agent.
  • Copper precursors include copper sulfate, hydroxides, oxides, and carbonates
  • reducing agents include organic aldehydes such as formalin or glyoxylic acid, sugars, hydroquinone, hypophosphorous acid, borohydride, and reduced phenols such as diamine borane.
  • the complexing agent examples include hydantoin, organic carboxylic acid, organic carboxylic acid salt, and organic amino carboxylic acid.
  • the content of the copper precursor in the copper plating solution may be 3 to 8 g/L, the content of the reducing agent may be 10 to 50 g/L, and the content of the complexing agent may be 100 to 300 g/L. It is not limited, and it is sufficient to have materials and compositions commonly used in conventional electroless copper plating solutions.
  • the copper plating solution may further contain conventionally known additives such as a surface charge control agent, a plating catalyst, and a stabilizer in addition to a copper precursor, a reducing agent, and a complexing agent.
  • the copper plating solution may further contain an alkali metal hydroxide such as sodium hydroxide, potassium hydroxide, lithium hydroxide, etc., and the content of the alkali metal hydroxide in the plating solution may be 20 to 50 g/L, but these additives must be present. And it is not limited to the content.
  • the temperature of the plating solution may be at a level of 20 to 70° C., substantially room temperature, and the electroless plating time may be appropriately adjusted in consideration of the desired thickness of the copper thin film.
  • the thickness of the copper thin film may be on the order of 1 to 30 ⁇ m.
  • the present invention includes a laminate for a copper clad laminate manufactured by the above-described manufacturing method.
  • the present invention includes a copper clad laminate.
  • a copper clad laminate according to the present invention includes an insulating substrate; a composite film in which a photoresist coating film and metal nanoparticles are composited on an insulating substrate; and a copper plating film covering the surface of the composite film, wherein the metal nanoparticles of the composite film are exposed to the surface of the photoresist coating film without being embedded in the recessed area embedded in the photoresist coating film and the photoresist coating film to form a metal surface in the composite film. It includes the metal surface area to form. At this time, the impregnated region may contact the insulating substrate.
  • the metal surface area when looking at only the metal surface area, may have a shape of cut particles. At this time, the cut surface may correspond to the surface of the photoresist coating film.
  • the metal surface area may be combined with the impregnated area to form a single grain, substantially spherical grain.
  • the diameter of the metal nanoparticle is smaller than or equal to the thickness of the photoresist coating film (D ⁇ T)
  • the upper portion of the metal nanoparticle multilayer including the metal nanoparticle covers the metal surface area
  • the metal nanoparticle multilayer The lower part of may form a recessed area.
  • these impregnated regions and metal surface regions correspond to the structure of the composite film obtained before photosintering and after embedding.
  • a metal surface region of one metal nanoparticle may be melt-bonded with a metal surface region of another metal nanoparticle adjacent to the one metal nanoparticle.
  • the flexible copper clad laminate includes an insulating substrate; A photoresist coating film positioned on an insulating substrate; a particulate metal array (corresponding to an array by recessed regions) that penetrates the photoresist coating film and contacts or is bound to the insulating substrate; It may have a structure including; a metal porous film extending integrally with the metal array and covering the surface of the photoresist coating film.
  • the structures of the particulate metal array and the metal porous film may be obtained by embedding metal nanoparticles in a photoresist coating film and then performing photosintering.
  • the particulate metal (corresponding to the impregnated region) constituting the particulate metal array by photosintering may be attached (bonded) to the insulating substrate beyond a physical contact state.
  • the metal porous film may be formed by melting and binding particulate metal surface regions (protrusions) cut by photosintering to each other.
  • the composite film may have a thickness of 50 nm to 500 nm, substantially 50 nm to 300 nm, more substantially 100 nm to 400 nm, and even more substantially 100 nm to 300 nm.
  • the thickness of the copper plating film may be 1 to 30 ⁇ m, 3 to 20 ⁇ m, or 3 to 10 ⁇ m, but is not limited thereto.
  • the insulating substrate, the photoresist coating film, the metal nanoparticles, and the copper plating film are identical to or similar to the insulating substrate, the photoresist coating film, the metal nanoparticles, and the copper thin film of the above-described method for manufacturing a laminate for a flexible copper clad laminate.
  • the flexible copper-clad laminate according to one embodiment includes all of the above in the method for manufacturing a laminate for a flexible copper-clad laminate.
  • the present invention includes a fine pattern formation method based on a flexible copper clad laminate. Accordingly, a method of forming a fine pattern to be described later may correspond to a method of manufacturing a flexible copper clad laminate having a fine pattern.
  • the method of forming a fine pattern according to the present invention may correspond to a method of manufacturing a laminate for a flexible copper clad laminate having a fine pattern, and thus, the present invention also includes a method of manufacturing a laminate for a flexible copper clad laminate having a fine pattern.
  • a method of forming a fine pattern according to the present invention includes the steps of I) forming a photoresist coating film on an insulating substrate; II) exposing the photoresist coating film according to a predetermined pattern (by using a patterned mask); III) coating metal nanoparticles on top of the exposed photoresist coating layer; IV) developing the photoresist coating film coated with metal nanoparticles; V) embedding the applied metal nanoparticles in the developed photoresist coating film; and VI) plating copper on the photoresist coating layer in which the metal nanoparticles are embedded.
  • steps I), III), V) and VI) are the photoresist coating film formation step (a) step) described above in the method of manufacturing a laminate for a flexible copper clad laminate, photo It corresponds to the step (b) of applying metal nanoparticles on the resist coating layer), the embedding step (b)), and the copper thin film formation step (c) using plating).
  • the fine pattern is formed in-situ during the manufacturing process of the flexible copper clad laminate, rather than manufacturing a fine pattern by removing a part of the copper foil according to the pattern from the manufactured flexible copper clad laminate.
  • the photoresist exposure process (II) step) is added, and after application of metal nanoparticles in step b) and before the embedding process, By adding a step (IV) of developing the exposed photoresist), a flexible copper clad laminate having a fine pattern can be manufactured.
  • step II) of the exposure process and step IV) of the development process will be described in detail.
  • step (II) of exposing the photoresist coating film according to a desired pattern may be performed.
  • exposure may be performed using a mask having a pattern corresponding to a desired fine pattern.
  • the light used for exposure may be light in the extreme ultraviolet to ultraviolet region, specifically, light having a wavelength of 10 nm to 370 nm, or light having a wavelength of substantially 150 nm to 370 nm.
  • a practical example of the light used during exposure includes extreme ultraviolet (13.5 nm), I-line (365 nm), KrF laser (248 nm), ArF laser (193 nm), F2 laser (157 nm), etc., but is not limited thereto. no.
  • the metal nanoparticles may be uniformly applied as a single layer having a close-packed structure on the photoresist coating layer. Accordingly, even when the photoresist pattern, which is a photoresist coating film remaining after development, has a fine pitch or a highly complex shape, a single layer of metal nanoparticles may be uniformly positioned on the photoresist pattern. Developing is sufficient if a developer commonly used in a semiconductor lithography process is used in consideration of the specific material of the photoresist.
  • the photoresist pattern may have a thickness of 50 nm to 500 nm, substantially 50 nm to 300 nm, more substantially 100 nm to 400 nm, and even more substantially 100 nm to 300 nm, but is not limited thereto.
  • an embedding process of embedding metal nanoparticles positioned on the developed photoresist coating film (photoresist pattern) into the photoresist coating film may be performed.
  • a composite film having a pattern corresponding to the mask pattern may be manufactured by the embedding process.
  • the embedding process may be performed by heating the photoresist pattern on which the metal nanoparticles are positioned to a temperature equal to or higher than the softening temperature of the photoresist.
  • the heat treatment temperature for embedding may be Ts to 1.20Ts, specifically 1.05Ts to 1.10Ts based on the softening point Ts of the photoresist.
  • the heat treatment time for embedding may be sufficient as long as the metal nanoparticles are sufficiently and completely sunk into the photoresist.
  • the heat treatment may be performed for 1 to 10 minutes, but is not limited thereto.
  • the average diameter D of the metal nanoparticles is greater than the thickness T of the photoresist coating film, after embedding, a metal surface region exposed to the surface of the photoresist coating film by the metal nanoparticles to form a metal surface is formed.
  • This metal surface area may act as a seed in a subsequent plating process.
  • T ⁇ D may be satisfied, and D may advantageously satisfy 1.05T to 2.0T, more advantageously 1.10T to 2.0T, and even more advantageously 1.2T to 1.8T.
  • the average diameter D of the metal nanoparticles applied to the photoresist coating layer may be smaller than or equal to the thickness T of the photoresist coating layer.
  • the metal nanoparticles satisfying D ⁇ T may be stacked in the form of a dense multi-layer of metal nano-particles, and when the metal nano-particles are embedded in the photoresist coating film, the metal nano-particle multi-layer is formed under the multi-layer of metal nano particles.
  • a part of the metal nanoparticles positioned on top of the metal nanoparticle multi-layer protrudes to the top of the photoresist coating film (is exposed to the surface) and forms a metal surface in the composite film.
  • a forming metal surface area may be provided. This metal surface area may also act as a seed in a subsequent plating process.
  • a copper plating step may be performed on the composite film, or a copper plating step may be performed after photosintering is performed.
  • the plated copper thin film also has a fine pattern corresponding to the mask pattern.
  • white light 400-800 nm band
  • the pulse width may be 0.5 to 3 ms
  • the pulse interval may be 0.5 to 1.5 sec, but is not necessarily limited thereto.
  • white light may be irradiated with an energy density of 1.4 J/cm 2 or less, substantially 0.6 to 1.4 J/cm 2 , and more substantially 0.7 to 1.2 J/cm 2 irradiated with an energy density. It can be. It is preferable that the metal nanoparticles are capped with a capping layer containing an organic acid so that effective photosintering can be performed even by such low energy density white light irradiation.
  • a copper plating process may be performed similarly to that described above in the method for manufacturing a laminate for a flexible copper clad laminate.
  • the plating can be electroless plating and is carried out by immersing a photoresist pattern on which an embedding has been performed (composite film pattern) or a photoresist pattern on which an embedding and photosintering has been advantageously performed (composite film pattern) has been performed in a copper plating solution.
  • the present invention includes a fine pattern manufactured by the above-described method for forming a fine pattern.
  • the present invention includes a flexible copper clad laminate having a fine pattern formed thereon, manufactured by the above-described method for forming a fine pattern.
  • the present invention includes a flexible copper clad laminate on which fine patterns are formed.
  • a flexible copper clad laminate having a fine pattern according to the present invention includes an insulating substrate; a composite film (composite film pattern) in which a photoresist coating film and metal nanoparticles are combined and patterned on the insulating substrate; and a copper plating film having a pattern corresponding to that of the composite film and covering an upper portion of the composite film, wherein the metal nanoparticles of the composite film are embedded in the photoresist coating film and the surface of the photoresist coating film without being embedded in the photoresist coating film. It includes a metal surface region that is exposed to form a metal surface in the composite film. In this case, as the metal surface region serves as a seed during plating of the copper plating layer, the metal surface region and the copper plating layer may be integrally bonded.
  • the flexible copper foil laminate on which the micro-pattern is formed is located on the insulating substrate, the patterned composite film located on the insulating substrate, and the flexible copper foil with the micro-pattern formed on the composite film and including the copper thin film patterned the same as the composite film. It may be a laminated plate.
  • the composite film and copper thin film (copper plating film) are patterned in the flexible copper clad laminate in which fine patterns are formed
  • the composite film, copper thin film (copper plating film), insulating substrate, etc. are similar to those described above for the flexible copper clad laminate. to the same, and thus, the flexible copper-clad laminate on which the fine pattern is formed includes all of the above-described details in the flexible copper-clad laminate.
  • the composite film is a film in which photoresist and metal nanoparticles are combined, and the metal nanoparticles contact the insulating substrate at the bottom and penetrate the photoresist pattern.
  • the upper part may be integrated with the copper thin film through the metal surface area.
  • the patterned composite film is a film in which a patterned photoresist and metal nanoparticles are combined, and the intercalated region of the metal nanoparticles may be in contact with or bound to the insulating substrate, and the metal surface region of one metal nanoparticle may be one.
  • the metal nanoparticle may be in a melt-bonded state with a metal surface region of another metal nanoparticle adjacent to the metal nanoparticle. The melting bonding between the metal surface regions may be by light sintering.
  • the thickness of the patterned composite film may be 50 nm to 500 nm, substantially 50 nm to 300 nm, more substantially 100 nm to 400 nm, and more substantially 100 nm to 300 nm, but is not necessarily limited thereto. no.
  • the thickness of the copper plating film having a pattern corresponding to the pattern of the composite film may be 1 to 30 ⁇ m, 3 to 20 ⁇ m, or 3 to 10 ⁇ m, but is not limited thereto.
  • the metal of the metal nanoparticle may be copper, aluminum, nickel, tin, silver, or an alloy thereof, but is not limited thereto.
  • the present invention includes a flexible copper-clad laminate on which fine patterns are formed manufactured by the above-described method for forming a fine pattern, or a flexible printed circuit board (FPBC) including the above-described flexible copper-clad laminate.
  • FPBC flexible printed circuit board
  • the present invention includes an electronic component including a flexible copper-clad laminate on which fine patterns are formed manufactured by the above-described fine pattern formation method, the above-described flexible copper-clad laminate, or the above-described flexible printed circuit board.
  • the electronic component may be a connector or board (main board) for a storage device, a wireless terminal, a computer, a laptop computer, a display, a camera, an automobile, a medical device, or a military/aerospace device.
  • main board for a storage device, a wireless terminal, a computer, a laptop computer, a display, a camera, an automobile, a medical device, or a military/aerospace device.
  • the photoresist in which the copper nanoparticles were embedded was irradiated with pulsed white light under the conditions of an energy of 0.95 J/cm 2 , a pulse width of 1.5 msec, and a pulse interval of 1 sec to perform photosintering.
  • the photoresist in which the copper nanoparticles were embedded in a copper plating solution (6.7 g/L of copper sulfate pentahydrate, 40 g/L of sodium hydroxide (NaOH), 140 g/L of potassium sodium tartrate, and 20 ml formalin) was coated with 20 Electroless plating was performed by immersion for a minute to prepare a flexible copper clad laminate. At this time, the thickness of the copper thin film formed by plating was 2 ⁇ m.
  • Example 1 is a scanning electron microscope image of observations before and after embedding copper nanoparticles according to Example 1. As can be seen through 'before embedding' on the left side of FIG. 1, it can be seen that the copper nanoparticles are uniformly and densely distributed on the surface of the photoresist coating film, forming a layer of copper nanoparticles. In addition, as can be seen through 'after embedding' on the right side of FIG.
  • the copper nanoparticles located on the surface sink into the photoresist due to the softening of the photoresist by heating and come into contact with the polyimide substrate at the bottom, It can be seen that the thickness of the copper nanoparticle layer is thicker than the thickness of the photoresist, so that a portion of the nanoparticles are not immersed in the photoresist and are embedded in a protruding form.
  • FIG. 2 is a scanning electron microscope photograph of the surface and cross-section immediately after the electroless plating in Example 1 was observed. As can be seen in FIG. 2 , even when the diameter of the copper nanoparticles is larger than the thickness of the photoresist, it can be seen that the electroless plating is performed uniformly throughout and a copper thin film is formed on top of the copper nanoparticle layer.
  • the flexible copper-clad laminate on which electroless plating was performed in Example 1 exhibited a uniform sheet resistance of 3.14 ⁇ /sq as a whole, and through this, it can be seen that the embedded copper nanoparticles function smoothly as copper seeds.
  • Example 3 is an optical photograph of the flexible copper clad laminate prepared in Example 1 observed. As can be seen from FIG. 3, it can be seen that an extremely thin flexible copper clad laminate can be manufactured to the extent that a substantially translucent characteristic appears, and a flexible copper clad laminate having a uniform thickness and a smooth surface is manufactured.
  • a flexible copper clad laminate was manufactured in the same manner as in Example 1, except that the copper nanoparticles had an average diameter of 60 to 100 nm in Example 1.
  • FIG. 4 is a scanning electron microscope image of observations before and after embedding copper nanoparticles according to Example 2. As shown in FIG. 1, as can be seen from 'before embedding' on the left side of FIG. 4, it can be seen that copper nanoparticles are uniformly and densely distributed on the surface of the photoresist coating film, forming a layer of copper nanoparticles. In addition, as can be seen through 'after embedding' on the right side of FIG.
  • the softening of the photoresist by heating causes the copper nanoparticles located on the surface to sink into the photoresist and contact the polyimide substrate at the bottom, It can be seen that the thickness of the multilayer of copper nanoparticles is thicker than the thickness of the photoresist, so that a portion of the nanoparticles are not immersed in the photoresist and are embedded in a protruding form.
  • Example 5 is a scanning electron microscope photograph of the surface and cross section immediately after the electroless plating performed in Example 2; As can be seen in FIG. 5 , it can be seen that the copper thin film has a uniform thickness and is formed smoothly on the upper part of the multilayer of copper nanoparticles including copper nanoparticles.
  • the copper thin film formed by the electroless plating performed in Example 2 also had excellent bonding strength as in Example 1.
  • Example 1 After soft baking in Example 1, an exposure process (ultraviolet rays, 40 mJ/cm 2 ) was performed using a mask having a serpentine pattern (line width of 60 ⁇ m, 40 ⁇ m, or 20 ⁇ m), and then copper ink was spun in the same manner as in Example 1. After coating, copper nanoparticles are applied on top of the exposed photoresist, and then development (developer AZ-400K, 3-minute immersion) is performed to obtain a patterned photoresist located on top of the copper nanoparticles, followed by Example 1 and Similarly, copper nanoparticles were embedded into the patterned photoresist and electroless plating was performed to prepare a fine pattern of the flexible copper clad laminate substrate.
  • an exposure process (ultraviolet rays, 40 mJ/cm 2 ) was performed using a mask having a serpentine pattern (line width of 60 ⁇ m, 40 ⁇ m, or 20 ⁇ m), and then copper ink was spun in the same manner as in Example
  • FIG. 6 is an optical photograph (sample photograph) and an optical microscope photograph (OM image) of a micropattern fabricated using a mask having a serpentine pattern having a line width of 60 ⁇ m, 40 ⁇ m, or 20 ⁇ m.
  • OM image optical microscope photograph
  • FIG. 7 is a diagram showing the results of a peel-off test using an adhesive tape before/after embedding copper nanoparticles. As can be seen from FIG. 7 , it can be seen that the binding force is greatly increased even when the copper nanoparticles are simply embedded in the photoresist.

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

La présente invention concerne un procédé de fabrication d'un corps stratifié pour un stratifié plaqué de cuivre. Un procédé de fabrication d'un stratifié plaqué de cuivre selon la présente invention comprend les étapes de : a) la formation d'un film de revêtement de résine photosensible sur un substrat isolant ; et b) l'application de nanoparticules métalliques sur la surface supérieure du film de revêtement de résine photosensible et l'incorporation des nanoparticules métalliques appliquées dans le film de revêtement de résine photosensible.
PCT/KR2022/013576 2021-09-14 2022-09-08 Corps stratifié pour stratifié plaqué de cuivre, son procédé de fabrication et procédé de formation de micromotif WO2023043140A1 (fr)

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KR10-2021-0122467 2021-09-14
KR20210122467 2021-09-14
KR1020220113208A KR20230039556A (ko) 2021-09-14 2022-09-07 동박 적층판용 적층체, 이의 제조방법 및 미세 패턴 형성방법
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745101B2 (en) * 2006-06-02 2010-06-29 Eastman Kodak Company Nanoparticle patterning process
KR101098549B1 (ko) * 2010-12-06 2011-12-26 (주) 아모엘이디 Ｌｅｄ 기판 제조 방법
KR20130014929A (ko) * 2011-08-01 2013-02-12 한양대학교 에리카산학협력단 열처리를 이용한 금속 나노입자 패턴의 전기소결 방법
KR20180029052A (ko) * 2015-07-03 2018-03-19 내셔날 리서치 카운실 오브 캐나다 금속 나노입자의 포토닉 소결에 기초한 자가-정렬 금속 패터닝
KR102138089B1 (ko) * 2013-07-04 2020-07-28 한국과학기술원 리소그래피용 메타-포토레지스트

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745101B2 (en) * 2006-06-02 2010-06-29 Eastman Kodak Company Nanoparticle patterning process
KR101098549B1 (ko) * 2010-12-06 2011-12-26 (주) 아모엘이디 Ｌｅｄ 기판 제조 방법
KR20130014929A (ko) * 2011-08-01 2013-02-12 한양대학교 에리카산학협력단 열처리를 이용한 금속 나노입자 패턴의 전기소결 방법
KR102138089B1 (ko) * 2013-07-04 2020-07-28 한국과학기술원 리소그래피용 메타-포토레지스트
KR20180029052A (ko) * 2015-07-03 2018-03-19 내셔날 리서치 카운실 오브 캐나다 금속 나노입자의 포토닉 소결에 기초한 자가-정렬 금속 패터닝

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