WO2023041046A1 - Dispositif photoélectrique et son procédé de fabrication, et dispositif d'affichage - Google Patents
Dispositif photoélectrique et son procédé de fabrication, et dispositif d'affichage Download PDFInfo
- Publication number
- WO2023041046A1 WO2023041046A1 PCT/CN2022/119360 CN2022119360W WO2023041046A1 WO 2023041046 A1 WO2023041046 A1 WO 2023041046A1 CN 2022119360 W CN2022119360 W CN 2022119360W WO 2023041046 A1 WO2023041046 A1 WO 2023041046A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phthalocyanine
- transport layer
- electron transport
- fluorinated
- zno
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 63
- 239000002245 particle Substances 0.000 claims abstract description 17
- 239000011787 zinc oxide Substances 0.000 claims description 115
- 230000005693 optoelectronics Effects 0.000 claims description 50
- 239000000243 solution Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- 239000002096 quantum dot Substances 0.000 claims description 33
- 239000011701 zinc Substances 0.000 claims description 30
- 239000002243 precursor Substances 0.000 claims description 26
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 21
- 230000005525 hole transport Effects 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 18
- 150000003751 zinc Chemical class 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 15
- MPMSMUBQXQALQI-UHFFFAOYSA-N cobalt phthalocyanine Chemical compound [Co+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 MPMSMUBQXQALQI-UHFFFAOYSA-N 0.000 claims description 13
- -1 magnesium fluorinated phthalocyanine Chemical class 0.000 claims description 13
- LBAIJNRSTQHDMR-UHFFFAOYSA-N magnesium phthalocyanine Chemical compound [Mg].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 LBAIJNRSTQHDMR-UHFFFAOYSA-N 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- 239000011258 core-shell material Substances 0.000 claims description 12
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 11
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 10
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 10
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 10
- 229910004613 CdTe Inorganic materials 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 9
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011592 zinc chloride Substances 0.000 claims description 5
- 235000005074 zinc chloride Nutrition 0.000 claims description 5
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 4
- 150000003378 silver Chemical class 0.000 claims description 4
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 claims description 3
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 claims description 3
- YWKKLBATUCJUHI-UHFFFAOYSA-N 4-methyl-n-(4-methylphenyl)-n-phenylaniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(C)=CC=1)C1=CC=CC=C1 YWKKLBATUCJUHI-UHFFFAOYSA-N 0.000 claims description 3
- FWXNJWAXBVMBGL-UHFFFAOYSA-N 9-n,9-n,10-n,10-n-tetrakis(4-methylphenyl)anthracene-9,10-diamine Chemical compound C1=CC(C)=CC=C1N(C=1C2=CC=CC=C2C(N(C=2C=CC(C)=CC=2)C=2C=CC(C)=CC=2)=C2C=CC=CC2=1)C1=CC=C(C)C=C1 FWXNJWAXBVMBGL-UHFFFAOYSA-N 0.000 claims description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 3
- 102000003978 Tissue Plasminogen Activator Human genes 0.000 claims description 3
- 108090000373 Tissue Plasminogen Activator Proteins 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 3
- 239000002585 base Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 229920000327 poly(triphenylamine) polymer Polymers 0.000 claims description 3
- 150000003220 pyrenes Chemical class 0.000 claims description 3
- 229910052950 sphalerite Inorganic materials 0.000 claims description 3
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 claims description 3
- 239000004246 zinc acetate Substances 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 235000021286 stilbenes Nutrition 0.000 claims description 2
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 claims 1
- OJDHPAQEFDMEMC-UHFFFAOYSA-N N#C[Cu]C#N Chemical class N#C[Cu]C#N OJDHPAQEFDMEMC-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 13
- 239000007924 injection Substances 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 214
- 239000010410 layer Substances 0.000 description 128
- 239000002086 nanomaterial Substances 0.000 description 37
- 239000000758 substrate Substances 0.000 description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 238000000576 coating method Methods 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 238000000053 physical method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011257 shell material Substances 0.000 description 2
- 238000010129 solution processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000004556 carbazol-9-yl group Chemical group C1=CC=CC=2C3=CC=CC=C3N(C12)* 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present application relates to the field of display technology, in particular to an optoelectronic device, a manufacturing method thereof, and a display device.
- Optoelectronic devices refer to devices made according to the photoelectric effect, which have a wide range of applications in new energy, sensing, communication, display, lighting and other fields, such as solar cells, photodetectors, organic electroluminescent devices (OLED) or quantum dots Electroluminescent devices (QLEDs).
- OLED organic electroluminescent devices
- QLEDs quantum dots Electroluminescent devices
- the structure of a traditional photoelectric device mainly includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer (ie, an electron transport layer), an electron injection layer, and a cathode.
- anode Under the action of the electric field, the holes generated by the anode of the photoelectric device and the electrons generated by the cathode move, inject into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer.
- a Energy excitons which excite light-emitting molecules and eventually produce visible light.
- ZnO is an n-type semiconductor material with a direct bandgap. It has a wide band gap of 3.37eV and a low work function of 3.7eV. It has the advantages of good stability, high transparency, safety and non-toxicity, making ZnO an ideal choice for preparing optoelectronic devices.
- ZnO also has many potential advantages.
- the exciton binding energy of ZnO is as high as 60meV, which is much higher than other wide-bandgap semiconductor materials (for example, the exciton binding energy of GaN is 2meV), and the exciton binding energy of ZnO is 2meV.
- ZnO nanomaterials also have the advantages of high electron mobility, simple preparation, and low cost, and are widely used in optoelectronic devices.
- the present application provides an optoelectronic device, a manufacturing method thereof, and a display device.
- the present application provides a photoelectric device, comprising a laminated anode, a light-emitting layer, an electron transport layer and a cathode, wherein the material of the electron transport layer includes ZnO particles and metal phthalocyanine complexes connected on the surface of the ZnO particles.
- the metal phthalocyanine complex is selected from one or more of zinc phthalocyanine, magnesium phthalocyanine, cobalt phthalocyanine, silver phthalocyanine and copper phthalocyanine.
- the molar ratio of the metal phthalocyanine complex to the ZnO particles is in the range of 1:(0.01-0.2).
- the metal phthalocyanine complex is a fluorinated metal phthalocyanine complex.
- the fluorinated metal phthalocyanine complex is selected from one or more of fluorinated zinc phthalocyanine, fluorinated magnesium phthalocyanine, fluorinated cobalt phthalocyanine, fluorinated silver phthalocyanine and fluorinated copper phthalocyanine kind.
- the average particle diameter of the ZnO particles is in the range of 10-100 nm.
- the light-emitting layer is an organic light-emitting layer or a quantum dot light-emitting layer
- the material of the organic light-emitting layer is selected from diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, One or more of TBPe fluorescent materials, TTPA fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials
- the material of the quantum dot light-emitting layer is selected from one or more of single-structure quantum dots and core-shell structure quantum dots
- the single-structure quantum dots are selected from one or more of II-VI group compounds, III-V group compounds and I-III-VI group compounds
- the II-VI group compounds are selected from CdSe, CdS, CdTe , ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, Cd
- the photoelectric device further includes a hole transport layer, and the hole transport layer is located between the anode and the light emitting layer.
- the material of the hole transport layer is selected from poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetra [N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline ], N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'-diamine, 4,4'-bis(N- carbazole)-1,1'-biphenyl, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl )) diphenylamine)], poly(9-vinylcarbazole), polytriphenylamine, poly[
- the present application also provides a method for preparing a photoelectric device, comprising the following steps:
- the light emitting layer being formed on the first electrode
- the second electrode being formed on the light emitting layer
- the preparation method also includes: providing zinc salt, alkali and solvent, mixing to obtain a ZnO precursor solution, mixing the ZnO precursor solution with a metal phthalocyanine complex to obtain a material for an electron transport layer, and depositing the electron transport layer layer materials to obtain an electron transport layer, and the electron transport layer and the light emitting layer are stacked between the first electrode and the second electrode.
- the first electrode is an anode
- the second electrode is a cathode
- the deposition of the material of the electron transport layer is performed between the formation of the light-emitting layer and the formation of the second electrode, and includes: The material of the electron transport layer is deposited on the light emitting layer.
- the first electrode is a cathode
- the second electrode is an anode
- the depositing the material of the electron transport layer is performed before the formation of the light-emitting layer, and includes: depositing on the first electrode The material of the electron transport layer.
- the zinc salt is selected from one or more of zinc acetate, zinc nitrate, zinc chloride and zinc acetate dihydrate.
- the alkali is selected from one or more of sodium hydroxide, potassium hydroxide and tetramethylammonium hydroxide
- the solvent is selected from one or more of methanol, ethanol and butanol.
- the molar ratio of OH - in the base to Zn 2+ in the zinc salt ranges from (1.5-3):1.
- the molar ratio of Zn 2+ in the ZnO precursor solution to the metal phthalocyanine complex ranges from 1:(0.01-0.2).
- the pH range of the ZnO precursor solution is 12-14.
- the metal phthalocyanine complex is selected from one or more of zinc phthalocyanine, magnesium phthalocyanine, cobalt phthalocyanine, silver phthalocyanine and copper phthalocyanine.
- the metal phthalocyanine complex is a fluorinated metal phthalocyanine complex
- the fluorinated metal phthalocyanine complex is selected from fluorinated zinc phthalocyanine, fluorinated magnesium phthalocyanine, fluorinated cobalt phthalocyanine, fluorine One or more of silver phthalocyanine and fluorinated copper phthalocyanine.
- a step of stirring at 60-120° C. is also included.
- the present application also provides a display device, which includes the above-mentioned optoelectronic device.
- the material of the electron transport layer of the optoelectronic device of the present application includes ZnO nanomaterials modified by metal phthalocyanine complexes, through the coordination effect of metal phthalocyanine, the Fermi energy level of ZnO is moved up into the conduction band, and the surface of ZnO is connected with M (Pc)-O-Zn bond and Zn-N(Pc) bond, and the M(Pc)-O-Zn bond and Zn-N(Pc) bond are composed of the 3d orbital and the subsurface Zn atom of ZnO
- Fig. 1 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application
- Fig. 2 is a schematic structural diagram of another optoelectronic device provided by the embodiment of the present application.
- Fig. 3 is a flow chart of a method for preparing an optoelectronic device provided in an embodiment of the present application
- Fig. 4 is a flow chart of another method for preparing an optoelectronic device provided in an embodiment of the present application.
- the embodiment of the present application provides a photoelectric device and a preparation method thereof. Each will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments. In addition, in the description of the present application, the term “including” means “including but not limited to”.
- expressions such as “one or more” refer to one or more of the listed items, and “multiple” refers to any combination of two or more of these items, including single items (species) ) or any combination of plural items (species), for example, "at least one (species) of a, b, or c" or "at least one (species) of a, b, and c" can mean: a ,b,c,a-b (that is, a and b),a-c,b-c, or a-b-c, where a,b,c can be single or multiple.
- an embodiment of the present application provides an optoelectronic device 100 , and the optoelectronic device 100 may be a solar cell, a photodetector, an organic electroluminescent device (OLED) or a quantum dot electroluminescent device (QLED).
- the optoelectronic device 100 includes an anode 10 , a light emitting layer 20 , an electron transport layer 30 and a cathode 40 stacked in sequence.
- the material of the electron transport layer 30 includes ZnO nanomaterials modified by metal phthalocyanine complexes, that is, MPc-ZnO, wherein M is metal and Pc is phthalocyanine.
- the material of the electron transport layer 30 includes ZnO nanomaterials and metal phthalocyanine complexes connected on the surface of the ZnO nanomaterials.
- the metal phthalocyanine complex may be selected from, but not limited to, one or more of zinc phthalocyanine, magnesium phthalocyanine, cobalt phthalocyanine, silver phthalocyanine and copper phthalocyanine.
- the ZnO nanomaterials are ZnO nanomaterials known in the art to be used for electron transport layers.
- the particle diameter of the ZnO nanomaterial is ZnO nanoparticles in the range of 10-100 nm. If the particle size of the ZnO nanoparticles is too small, there will be more surface defects on the ZnO surface, which will affect the electron transport performance of the electron transport layer 30; The film uniformity, in turn, affects the electron transport performance of the electron transport layer 30 .
- the ZnO nanomaterial modified by the metal phthalocyanine complex moves the Fermi energy level of ZnO upwards and enters the conduction band through the coordination effect of metal phthalocyanine, so that the surface of ZnO is connected with M(Pc)-O-Zn bonds and Zn -N(Pc) bond, and the M(Pc)-O-Zn bond and Zn-N(Pc) bond are composed of the 3d orbital of the ZnO surface and the subsurface Zn atom and the 2p orbital of the surface O atom, thus Metallize the surface of ZnO so that ZnO presents a metallic state, thereby improving the conductivity of ZnO nanomaterials, promoting the electron transport of ZnO nanomaterials, and improving the electron transport efficiency of the electron transport layer 30, which is conducive to including the electron transport layer 30.
- the electron-hole injection of the optoelectronic device 100 is balanced, thereby improving the luminous efficiency of the optoelectronic device 100 and reducing the turn
- the molar ratio of the metal phthalocyanine complex to the ZnO nano material is in the range of 1:(0.01- 0.2). If the content of the metal phthalocyanine complex is too low, it is difficult to improve the electron transport efficiency of the electron transport layer 30; if the content of the metal phthalocyanine complex is too high, the charge transport performance of the electron transport layer 30 will be reduced.
- the metal phthalocyanine complex is a fluorinated metal phthalocyanine complex, namely F-MPc-ZnO.
- the fluorinated metal phthalocyanine complex can be selected from but not limited to one or more of fluorinated zinc phthalocyanine, fluorinated magnesium phthalocyanine, fluorinated cobalt phthalocyanine, fluorinated silver phthalocyanine and fluorinated copper phthalocyanine kind.
- the fluorinated metal phthalocyanine complex uses fluorine atoms or fluorine-containing groups to chemically modify the benzene ring in the metal phthalocyanine complex, and utilizes the electron-withdrawing effect of the fluorine atoms to reduce
- the electron cloud density makes it easier for the central metal atom of the metal phthalocyanine complex to combine with the oxygen vacancies on the ZnO surface to induce electron localization through coordination, thereby enhancing the metallicity of the ZnO surface, reducing the work function of ZnO, and making ZnO
- the work function of is more matched with the work function of the cathode, so that the electron transport layer 30 has good conductivity. In this way, an ohmic contact can be formed by evaporating an electrode on the electron transport layer 30 comprising the ZnO nanomaterial modified by the metal phthalocyanine complex, thereby effectively improving the electron injection of the optoelectronic device 100.
- the N atoms on the metal phthalocyanine complex coordinate with the Zn dangling bonds in ZnO, the metal atoms on the metal phthalocyanine complex coordinate with the oxygen vacancies in ZnO, and the introduction of fluorine can enhance the The solubility in the solvent can passivate the surface defects of ZnO, reduce the capture of electrons by ZnO, and thus promote the effective injection of electrons into the light-emitting layer of the optoelectronic device 100 .
- the fluorine-containing groups act as ligands to modify the metal phthalocyanine complex, which can reduce the surface roughness of the ZnO film, improve the contact interface between ZnO and the cathode, and synergistically improve the electron injection efficiency. This is beneficial to the electron-hole injection balance of the optoelectronic device 100 including the electron transport layer 30 , thereby improving the luminous efficiency of the optoelectronic device 100 and reducing the turn-on voltage of the optoelectronic device 100 .
- the material of the electron transport layer is the ZnO nanomaterial modified by the metal phthalocyanine complex.
- the material of the electron transport layer may also include nano-metal oxides or doped nano-metal oxides.
- Nano-metal oxides include but are not limited to ZnO, TiO 2 , SnO 2 , Ta 2 O 3 , ZrO 2 , NiO, One or more of TiLiO, ZnAlO, ZnMgO, ZnSnO, ZnLiO and InSnO, the doping element in the doped nano metal oxide is one or more of magnesium, aluminum, gallium, lithium, indium, tin and molybdenum Various.
- the material of the electron transport layer is composed of the ZnO nanomaterial modified by the metal phthalocyanine complex and the nano metal oxide or doped nano metal oxide.
- the material of the anode 10 is known in the art for anode materials, for example, can be selected from but not limited to doped metal oxide electrodes, composite electrodes and the like.
- the doped metal oxide electrode may be selected from but not limited to indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), aluminum doped zinc oxide (AZO), One or more of gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO) and aluminum-doped magnesium oxide (AMO).
- the composite electrode is a composite electrode with a metal sandwiched between doped or non-doped transparent metal oxides, such as AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, ZnO/Ag/ZnO, ZnO/Al/ZnO, TiO 2 /Ag/TiO 2 , TiO 2 /Al/TiO 2 , ZnS/Ag/ZnS, ZnS/Al/ZnS, etc.
- "/" means a laminated layer, for example, AZO/Ag/AZO means a composite electrode formed by sequentially stacking AZO, Ag, and AZO.
- the light emitting layer 20 can be an organic light emitting layer or a quantum dot light emitting layer.
- the optoelectronic device 100 may be an organic electroluminescent device.
- the optoelectronic device 100 may be a quantum dot electroluminescent device.
- the material of the organic light-emitting layer is a material known in the art to use an organic light-emitting layer, for example, it can be selected from but not limited to diaryl anthracene derivatives, distyryl aromatic derivatives, pyrene derivatives or fluorene derivatives, One or more of TBPe fluorescent material emitting blue light, TTPA fluorescent material emitting green light, TBRb fluorescent material emitting orange light, and DBP fluorescent material emitting red light.
- the material of the quantum dot light-emitting layer is a quantum dot material known in the art for the quantum dot light-emitting layer of an optoelectronic device, for example, it can be selected from but not limited to one or more of a single-structure quantum dot and a core-shell structure quantum dot Various.
- the single-structure quantum dots may be selected from, but not limited to, one or more of II-VI compounds, III-V compounds and I-III-VI compounds.
- the II-VI group compound can be selected from but not limited to CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, One or more of CdZnSeTe and CdZnSTe;
- the III-V compound can be selected from but not limited to one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP one or more;
- the I-III-VI compound may be selected from but not limited to one or more of CuInS 2 , CuInSe 2 and AgInS 2 .
- the core of the quantum dot of the core-shell structure can be selected from one or more of the above-mentioned single-structure quantum dots
- the shell material of the quantum dot of the core-shell structure can be selected from but not limited to CdS, CdTe, CdSeTe, One or more of CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, and ZnS.
- the quantum dots of the core-shell structure can be selected from but not limited to CdZnSe/CdZnS/ZnS, CdZnSe/ZnSe/ZnS, CdSe/ZnS, CdSe/ZnSe/ZnS, ZnSe/ZnS, ZnSeTe/ZnS, CdSe/CdZnSeS One or more of ZnS, InP/ZnSe/ZnS and InP/ZnSeS/ZnS.
- the cathode 40 is a cathode known in the art for electroluminescent devices, for example, may be selected from but not limited to one or more of Ag electrodes, Al electrodes, Au electrodes, Pt electrodes or alloy electrodes.
- the photoelectric device 100 further includes a hole transport layer 50 , and the hole transport layer 50 is located between the anode 10 and the light emitting layer 20 .
- the material of the hole transport layer 50 can also be a material known in the art for the hole transport layer, for example, can be selected from but not limited to poly[bis(4-phenyl)(2,4,6-tri Methylphenyl)amine] (PTAA), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro -omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline](TAPC), N,N'-bis(1-naphthyl)-N,N'- Diphenyl-1,1'-diphenyl-4,4'-diamine (NPB), 4,4'-bis(N-carbazole)-1,1'-biphenyl (CBP), poly[ (9,9-dioctylfluorenyl-2,7-diyl
- the optoelectronic device 100 can also add some functional layers that are conventionally used in optoelectronic devices to help improve the performance of optoelectronic devices, such as electron blocking layers, hole blocking layers, electron injection layers, Hole injection layer, interface modification layer, etc.
- each layer of the optoelectronic device 100 can be adjusted according to the light emission requirements of the optoelectronic device 100 .
- the optoelectronic device 100 may be a positive optoelectronic device or an inverted optoelectronic device.
- the embodiment of the present application also provides a method for preparing the optoelectronic device 100, including the following steps:
- Step S11 providing a first electrode, and forming a light-emitting layer 20 on the first electrode;
- Step S12 forming an electron transport layer 30 on the light-emitting layer 20, specifically:
- A. Provide zinc salt, alkali and solvent, and mix to obtain ZnO precursor solution
- the ZnO precursor solution is mixed with the metal phthalocyanine complex and reacted to obtain the ZnO nanomaterial modified by the metal phthalocyanine complex, i.e. the material of the electron transport layer;
- Step S13 forming a second electrode on the electron transport layer 30 .
- the first electrode is the anode 10
- the second electrode is the cathode 40 .
- the step S11 is: providing a first electrode, and sequentially forming a stacked hole transport layer 50 and a light emitting layer 20 on the first electrode.
- the embodiment of the present application also provides another method for preparing the optoelectronic device 100, which includes the following steps:
- Step S21 providing a first electrode
- Step S22 forming an electron transport layer 30 on the first electrode, specifically:
- A. Provide zinc salt, alkali and solvent, and mix to obtain ZnO precursor solution
- the ZnO precursor solution is mixed with the metal phthalocyanine complex and reacted to obtain the ZnO nanomaterial modified by the metal phthalocyanine complex, i.e. the material of the electron transport layer;
- Step S23 sequentially forming a laminated light emitting layer 20 and a second electrode on the electron transport layer 30 .
- the first electrode is the cathode 40
- the second electrode is the anode 10 .
- the step S23 is: sequentially forming a stacked light emitting layer 20 , a hole transport layer 50 and a second electrode on the electron transport layer 30 .
- the zinc salt can be selected from but not limited to one or more of soluble inorganic zinc salts and soluble organic zinc salts, for example, can be selected from but not limited to zinc acetate, zinc nitrate, zinc chloride and one or more of zinc acetate dihydrate.
- the base may be selected from but not limited to one or more of sodium hydroxide, potassium hydroxide and tetramethylammonium hydroxide.
- the solvent may be an organic solvent.
- the organic solvent may be selected from but not limited to one or more of methanol, ethanol and butanol.
- the range of the molar ratio of OH- in the alkali to Zn 2+ in the zinc salt is (1.5-3):1.
- the pH range of the ZnO precursor solution is 12-14. Alkaline environment is conducive to the synthesis of ZnO nanometer material, and the pH of described alkali is too low, and the surface of ZnO nanomaterial easily forms more hydroxyl ligands; The diameter is too small and has more surface defects.
- the mixing method of the salt, alkali and solvent is as follows: add an appropriate amount of zinc salt to 50ml of solvent to form a solution with a concentration of 0.1-1M, stir to dissolve, then add 10ml of alcoholic lye, and continue to stir 10min-2h to get a clear and transparent solution, which is the ZnO precursor solution.
- the alcohol may be selected from but not limited to one or more of methanol, ethanol and butanol.
- the step of stirring at constant temperature is also included after mixing.
- the temperature range of constant temperature is 60-120°C.
- the stirring time is not limited, and the stirring can be stopped after obtaining a clear and transparent solution. In one embodiment, the stirring time range is 10min-2h.
- the constant temperature stirring can reduce the reaction barrier, increase the activity of reactants, and then accelerate the reaction. If the temperature is too low, the effect is not good, and if the temperature is too high, the solvent evaporates quickly and affects the reaction.
- the metal phthalocyanine complex can be selected from but not limited to one or more of zinc phthalocyanine, magnesium phthalocyanine, cobalt phthalocyanine, silver phthalocyanine and copper phthalocyanine.
- the metal phthalocyanine complex is a fluorinated metal phthalocyanine complex.
- the fluorinated metal phthalocyanine complex can be selected from but not limited to one or more of fluorinated zinc phthalocyanine, fluorinated magnesium phthalocyanine, fluorinated cobalt phthalocyanine, fluorinated silver phthalocyanine and fluorinated copper phthalocyanine kind.
- the range of the molar ratio of Zn 2+ in the ZnO precursor solution to the metal phthalocyanine complex is 1:(0.01-0.2).
- the type of the substrate is not limited.
- the substrate is a cathode substrate, and the cathode can be selected from but not limited to one or more of Ag electrodes, Al electrodes, Au electrodes, Pt electrodes or alloy electrodes, and the substrate can be The conventionally used substrate such as glass, the ZnO nanometer material modified by the metal phthalocyanine complex is arranged on the cathode.
- the substrate includes a laminated anode and a light emitting layer, and the ZnO nanomaterial modified by the metal phthalocyanine complex is disposed on the light emitting layer.
- the step B after mixing the ZnO precursor solution and the metal phthalocyanine complex, further includes: stirring the ZnO precursor solution and the metal phthalocyanine complex to react to obtain a reaction product, and then using a precipitation agent to precipitate the reaction product .
- the reaction time is 1-4h.
- the eluting agent can be selected from but not limited to one or more of acetone, ethyl acetate, hexane and heptane.
- the method of arranging the ZnO nanomaterial modified by the metal phthalocyanine complex on the substrate may be a chemical method or a physical method.
- the chemical method can be chemical vapor deposition method, continuous ion layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method and co-precipitation method, etc.
- the physical method can be physical coating method or solution processing method, and the physical coating method can be thermal evaporation coating method CVD, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method PVD, atomic layer deposition method and pulse laser deposition method, etc.; the solution processing method can be spin coating method, printing method, inkjet printing method, scraping method, printing method, dipping method, soaking method, spraying method, roller coating method, casting method, Slot coating method and strip coating method, etc.
- the physical coating method can be thermal evaporation coating method CVD, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method PVD, atomic layer deposition method and pulse laser deposition method, etc.
- the solution processing method can be spin coating method, printing method, inkjet printing method, scraping method, printing method, dipping method, soaking method, spraying method, roller coating method, casting method
- the method of arranging the ZnO nanomaterial modified by the metal phthalocyanine complex on the substrate is a solution method.
- the ZnO nano material modified by the metal phthalocyanine complex needs to be used first.
- the dispersant is dispersed to obtain the metal phthalocyanine complex modified ZnO nano material dispersion, and then the metal phthalocyanine complex modified ZnO nano material dispersion is arranged on the substrate by a solution method.
- the dispersant may be selected from but not limited to one or more of methanol, ethanol, butanol and pentanol.
- the methods for forming the anode 10 , the hole transport layer 50 , the light emitting layer 20 and the cathode 40 can be realized by conventional techniques in the art, such as chemical or physical methods.
- the chemical method or physical method can be referred to above, and will not be repeated here.
- the preparation method of the photoelectric device 100 also includes forming the Describe the steps of each functional layer.
- the embodiment of the present application also provides a display device, which includes the optoelectronic device 100 .
- This embodiment is basically the same as Embodiment 1, the difference is that in this embodiment, the ZnO precursor solution is mixed with fluorinated cobalt phthalocyanine, wherein the molar ratio of Zn in the ZnO precursor solution to fluorinated cobalt phthalocyanine is 1:0.05.
- This embodiment is basically the same as Embodiment 1, the difference is that in this embodiment, the ZnO precursor solution is mixed with fluorinated magnesium phthalocyanine, wherein the molar ratio of Zn in the ZnO precursor solution to fluorinated magnesium phthalocyanine is 1:0.05.
- This embodiment is basically the same as Embodiment 1, the difference is that in this embodiment, the ZnO precursor solution is mixed with zinc phthalocyanine, wherein the molar ratio of Zn in the ZnO precursor solution to zinc phthalocyanine is 1:0.1, The ZnO nanometer particles modified by the zinc phthalocyanine and the ZnO nanometer material dispersion liquid modified by the zinc phthalocyanine are obtained.
- ZnO nanomaterials wherein the ZnO nanomaterials have a particle size of 10-100nm, and disperse them with ethanol to obtain a ZnO nanomaterial dispersion;
- the external quantum efficiency EQE and turn-on voltage of the photoelectric device 100 of the above-mentioned Examples 1-4 and the photoelectric device of the comparative example were tested.
- the external quantum efficiency EQE and the turn-on voltage are measured by EQE optical testing equipment.
- the turn-on voltage is the voltage when the brightness of the device is 1 nits.
- Table 1 The test results are shown in Table 1.
- the optoelectronic device 100 in which the electron transport layer 30 material of Examples 1-4 is a ZnO nanomaterial modified by a metal phthalocyanine complex has a higher External quantum efficiency and lower turn-on voltage.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
La présente invention concerne un dispositif photoélectrique et son procédé de fabrication, et un dispositif d'affichage. Le dispositif photoélectrique comprend une anode, une couche électroluminescente, une couche de transport d'électrons et une cathode qui sont empilées ; le matériau de la couche de transport d'électrons comprend une particule de ZnO et un complexe de phtalocyanine métallique fixé à la surface de la particule de ZnO. La couche de transport d'électrons du dispositif photoélectrique présente une efficacité de transport d'électrons élevée, et il est avantageux d'équilibrer l'injection de trous d'électrons du dispositif photoélectrique, ce qui permet d'améliorer l'efficacité lumineuse du dispositif photoélectrique et de réduire la tension d'allumage du dispositif photoélectrique.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111112237.5A CN115915801A (zh) | 2021-09-18 | 2021-09-18 | 一种光电器件及其制备方法、显示装置 |
CN202111112237.5 | 2021-09-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2023041046A1 true WO2023041046A1 (fr) | 2023-03-23 |
Family
ID=85602466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2022/119360 WO2023041046A1 (fr) | 2021-09-18 | 2022-09-16 | Dispositif photoélectrique et son procédé de fabrication, et dispositif d'affichage |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN115915801A (fr) |
WO (1) | WO2023041046A1 (fr) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103456895A (zh) * | 2012-05-30 | 2013-12-18 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
CN104124367A (zh) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
US20150255745A1 (en) * | 2012-09-28 | 2015-09-10 | Ocean's King Lighting Science & Technology Co., Ltd | Organic electroluminescent device and preparation method thereof |
JP2020132844A (ja) * | 2019-02-12 | 2020-08-31 | 東洋インキScホールディングス株式会社 | 量子ドット、量子ドット含有組成物、インクジェットインキ及び印刷物 |
-
2021
- 2021-09-18 CN CN202111112237.5A patent/CN115915801A/zh active Pending
-
2022
- 2022-09-16 WO PCT/CN2022/119360 patent/WO2023041046A1/fr unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103456895A (zh) * | 2012-05-30 | 2013-12-18 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
US20150255745A1 (en) * | 2012-09-28 | 2015-09-10 | Ocean's King Lighting Science & Technology Co., Ltd | Organic electroluminescent device and preparation method thereof |
CN104124367A (zh) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
JP2020132844A (ja) * | 2019-02-12 | 2020-08-31 | 東洋インキScホールディングス株式会社 | 量子ドット、量子ドット含有組成物、インクジェットインキ及び印刷物 |
Also Published As
Publication number | Publication date |
---|---|
CN115915801A (zh) | 2023-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110416421B (zh) | 一种量子点薄膜及量子点发光二极管 | |
US20220328781A1 (en) | Composite material, quantum dot light-emitting diode and preparation method thereof | |
WO2021136044A1 (fr) | Diode électroluminescente à points quantiques et son procédé de fabrication | |
US20240067872A1 (en) | Quantum dot film and preparation method therefor, photoelectric device, display apparatus and preparation method for quantum dot light-emitting device | |
WO2023041046A1 (fr) | Dispositif photoélectrique et son procédé de fabrication, et dispositif d'affichage | |
WO2022143676A1 (fr) | Matériau composite et son procédé de préparation et diode électroluminescente à points quantiques | |
CN113130790B (zh) | 一种纳米材料及其制备方法与量子点发光二极管 | |
CN113707777B (zh) | 复合材料及其制备方法、发光器件 | |
CN115477944A (zh) | 量子点材料、量子点发光二极管及其制备方法 | |
CN110635055B (zh) | 一种量子点薄膜及量子点发光二极管 | |
WO2023051317A1 (fr) | Nanomatériau d'oxyde de tungstène et son procédé de préparation et dispositif optoélectronique | |
WO2023124550A1 (fr) | Procédé de préparation pour dispositif électroluminescent, dispositif électroluminescent et appareil d'affichage | |
WO2023051461A1 (fr) | Nanomatériau d'oxyde de molybdène, son procédé de préparation et dispositif photoélectrique | |
WO2024021335A1 (fr) | Matériau composite et son procédé de préparation, et diode électroluminescente | |
WO2023193427A1 (fr) | Dispositif électroluminescent et son procédé de préparation, et appareil d'affichage | |
WO2023056829A1 (fr) | Couche électroluminescente à points quantiques, procédé de préparation de couche électroluminescente à points quantiques et dispositif à diodes électroluminescentes à points quantiques | |
WO2023082970A1 (fr) | Matériau composite, son procédé de préparation et dispositif électroluminescent | |
WO2023056838A1 (fr) | Film mince et son procédé de préparation, dispositif photoélectrique | |
CN113120952B (zh) | 一种硫化锌纳米材料及其制备方法、硫化锌薄膜、量子点发光二极管 | |
CN116156918A (zh) | 一种纳米材料及其制备方法、电子传输薄膜及光电器件 | |
CN117410410A (zh) | 复合材料及其制备方法、发光二极管 | |
CN115867094A (zh) | 光电器件及其制备方法、碳包覆氧化亚铜颗粒的制备方法 | |
CN115707264A (zh) | 核壳纳米材料及其制备方法、显示器件 | |
CN113054143A (zh) | 一种纳米材料及其制备方法与量子点发光二极管 | |
CN116156927A (zh) | 复合材料、光电器件及其制备方法、显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NENP | Non-entry into the national phase |
Ref country code: DE |