WO2022143676A1 - Matériau composite et son procédé de préparation et diode électroluminescente à points quantiques - Google Patents

Matériau composite et son procédé de préparation et diode électroluminescente à points quantiques Download PDF

Info

Publication number
WO2022143676A1
WO2022143676A1 PCT/CN2021/142131 CN2021142131W WO2022143676A1 WO 2022143676 A1 WO2022143676 A1 WO 2022143676A1 CN 2021142131 W CN2021142131 W CN 2021142131W WO 2022143676 A1 WO2022143676 A1 WO 2022143676A1
Authority
WO
WIPO (PCT)
Prior art keywords
composite material
quantum dot
dot light
zinc oxide
zinc
Prior art date
Application number
PCT/CN2021/142131
Other languages
English (en)
Chinese (zh)
Inventor
李俊杰
张天朔
郭煜林
童凯
Original Assignee
Tcl科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tcl科技集团股份有限公司 filed Critical Tcl科技集团股份有限公司
Publication of WO2022143676A1 publication Critical patent/WO2022143676A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots

Definitions

  • the present disclosure relates to the field of quantum dot light-emitting diodes, and in particular, to a composite material and a preparation method thereof, and a quantum dot light-emitting diode.
  • a quantum dot light-emitting diode is a structure composed of a cathode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and an anode. When a voltage is applied, electrons and holes are injected from their respective electrodes, and the two emit light together. QLEDs have attracted more and more attention due to their excellent properties such as wide absorption and narrow emission, high color purity and luminous intensity due to their continuously tunable spectrum in the visible region.
  • ZnO is a common II-VI semiconductor compound, the forbidden band width of its material can reach 3.34eV, has the coordination of optoelectronic properties, and is an ideal electron transport layer material. Electron transport layer material-ZnO-based nanocrystals have been widely studied as carrier transport materials for QLED devices.
  • inorganic nano-zinc oxide particles need to be dispersed into the organic matrix, but the agglomeration of inorganic nanoparticles is often caused by the following reasons: (1) particle aggregation caused by intermolecular forces, hydrogen bonds, electrostatic interactions, etc.; ( 2) Due to the quantum tunneling effect between particles, charge transfer and the mutual coupling of interface atoms, the particles are very easy to agglomerate through the interface interaction and solid-phase reaction; After contact with a medium, it is easy to adsorb gas, medium or interact with it and lose its original surface properties, resulting in adhesion and agglomeration; (4) Its surface energy is extremely high, the contact interface is large, and it is in a non-thermodynamically stable state, which makes the crystal grains in a non-thermodynamic stable state.
  • the purpose of the present disclosure is to provide a composite material and a preparation method thereof, and a quantum dot light-emitting diode, aiming to solve the problem that the existing nano-zinc oxide particles are easy to agglomerate, resulting in a decrease in electrical conductivity and poor carrier transport. balance issue.
  • a composite material comprising zinc oxide nanoparticles and polypyrrole coated on the surface of the zinc oxide nanoparticles.
  • a preparation method of composite material comprising the steps:
  • the lye solution is added to the zinc salt solution and mixed, then the first mixed solution is added to mix, and finally an oxidant is added to mix, and the composite material is prepared by reaction.
  • a quantum dot light-emitting diode comprising an electron transport layer, the material of the electron transport layer is the composite material described in the present disclosure or the composite material prepared by the preparation method described in the present disclosure.
  • the composite material provided by the present disclosure includes zinc oxide nanoparticles and polypyrrole coated on the surface of the zinc oxide nanoparticles.
  • the coating of the polypyrrole can effectively increase the interval between the zinc oxide nanoparticles, passivate the surface of the zinc oxide nanoparticles, reduce the generation of oxygen vacancies, and reduce the surface energy of the zinc oxide nanoparticles, thereby protecting the zinc oxide nanoparticles No agglomeration occurs;
  • the surface of the pyrrole has N, C atoms, which can effectively provide an electron transport path and improve the electron transport capacity;
  • the coating of the polypyrrole can also effectively isolate the corrosion of the zinc oxide nanoparticles by water and oxygen, compared with ordinary The ligands of polypyrrole are more dense.
  • FIG. 1 is a flow chart of a preferred embodiment of a method for preparing a composite material provided by the present disclosure.
  • FIG. 2 is a schematic structural diagram of a quantum dot light emitting diode with an upright structure provided by the present disclosure.
  • FIG. 3 is a flowchart of a preferred embodiment of a method for manufacturing a quantum dot light-emitting diode with an upright structure provided by the present disclosure.
  • FIG. 4 is a flow chart of a preferred embodiment of a method for manufacturing a quantum dot light emitting diode with an inverted structure provided by the present disclosure.
  • FIG. 5 is an FT-IR image of the composite material prepared in Example 1.
  • Example 6 is a U-I comparison diagram of Comparative Example 1 and Example 1-Example 3.
  • the present disclosure provides a composite material, a preparation method thereof, and a quantum dot light-emitting diode.
  • a composite material a preparation method thereof, and a quantum dot light-emitting diode.
  • the present disclosure will be further described below in detail. It should be understood that the specific embodiments described herein are only used to explain the present disclosure, but not to limit the present disclosure.
  • ZnO nanoparticles Due to the defects on the surface of ZnO nanoparticles, part of Zn does not combine with O to form dangling bonds, which makes ZnO NPs have a large specific surface area and extremely high surface energy, resulting in mutual agglomeration between ZnO nanoparticles, which directly leads to ZnO The nanoparticle conductivity decreases and the carrier transport is unbalanced, ultimately resulting in lower device efficiency and easy quenching.
  • the present disclosure provides a composite material comprising zinc oxide nanoparticles and polypyrrole coated on the surface of the zinc oxide nanoparticles.
  • N in the polypyrrole is covalently bonded to zinc containing oxygen defects on the surface of the zinc oxide nanoparticles, thereby forming a composite material.
  • the coating of the polypyrrole can effectively increase the interval between the zinc oxide nanoparticles, passivate the surface of the zinc oxide nanoparticles, reduce the generation of oxygen vacancies, and reduce the surface energy of the zinc oxide nanoparticles, thereby protecting the zinc oxide nanoparticles No agglomeration occurs; the surface of the pyrrole has N, C atoms, which can effectively provide an electron transport path and improve the electron transport capacity; the coating of the polypyrrole can also effectively isolate the corrosion of the zinc oxide nanoparticles by water and oxygen, compared with ordinary The ligands of polypyrrole are more dense.
  • the polypyrrole has a conjugated structure in which carbon-carbon single bonds and carbon-carbon double bonds are alternately arranged, the double bonds are composed of ⁇ electrons and ⁇ electrons, and the ⁇ electrons are fixed and cannot move freely. , forming covalent bonds between carbon atoms.
  • the 2 pi electrons in the conjugated double bond are not fixed on a certain carbon atom, they can be translocated from one carbon atom to another carbon atom, that is, they have a tendency to extend throughout the molecular chain. That is, the overlapping of the ⁇ electron clouds in the molecule produces an energy band common to the whole molecule, and the ⁇ electrons are similar to the free electrons in the metal conductor, which achieves the purpose of transporting electrons.
  • the conductivity of pyrrole can be adjusted according to different proportions of pyrrole and the selection of alkali source, so as to achieve the purpose of matching the conductivity of the quantum dots, thereby obtaining zinc oxide with stronger adaptability.
  • a preparation method of a composite material is also provided, as shown in Figure 1, which comprises the steps:
  • the zinc salt solution and the lye solution can generate zinc oxide nanoparticles after being stirred for a period of time, and as the first mixed solution is added, the pyrrole and the zinc oxide nanoparticles are coordinated and combined, and then the first mixed solution
  • the cationic surfactant in the solution is used to strengthen the surface activity of the zinc oxide nanoparticles, so that the pyrrole can achieve a better coating effect; finally, an oxidant is added for the polymerization of the pyrrole, and the finally formed polypyrrole will be coated on the zinc oxide.
  • a coating film is formed on the surface of the nanoparticles, thereby preparing the composite material.
  • N in the polypyrrole is coordinately bonded to zinc containing oxygen defects on the surface of the zinc oxide nanoparticles.
  • the coating of the polypyrrole can effectively increase the interval between the zinc oxide nanoparticles, passivate the surface of the zinc oxide nanoparticles, reduce the generation of oxygen vacancies, and reduce the surface energy of the zinc oxide nanoparticles, thereby protecting the zinc oxide nanoparticles No agglomeration occurs; the surface of the pyrrole has N, C atoms, which can effectively provide an electron transport path and improve the electron transport capacity; the coating of the polypyrrole can also effectively isolate the corrosion of the zinc oxide nanoparticles by water and oxygen, compared with ordinary The ligands of polypyrrole are more dense.
  • the polypyrrole has a conjugated structure in which carbon-carbon single bonds and carbon-carbon double bonds are alternately arranged, the double bonds are composed of ⁇ electrons and ⁇ electrons, and the ⁇ electrons are fixed and cannot move freely. , forming covalent bonds between carbon atoms.
  • the 2 pi electrons in the conjugated double bond are not fixed on a certain carbon atom, they can be translocated from one carbon atom to another carbon atom, that is, they have a tendency to extend throughout the molecular chain. That is, the overlapping of the ⁇ electron clouds in the molecule produces an energy band common to the whole molecule, and the ⁇ electrons are similar to the free electrons in the metal conductor, which achieves the purpose of transporting electrons.
  • the molar ratio of the cationic surfactant and the pyrrole is 1:0.5-8.
  • the amount of the cationic surfactant is too small, the surface activity of the zinc oxide nanoparticles will be reduced, the coating degree will be reduced, and the coating degree will be poor; if the amount of the cationic surfactant is too large, a large amount of cationic surface active The surface activity of the zinc oxide nanoparticles will be too large, and the zinc oxide nanoparticles will react too vigorously, resulting in the agglomeration of the zinc oxide nanoparticles.
  • the coating degree of polypyrrole can be adjusted, thereby adjusting the electrical conductivity of the composite material, so as to achieve the purpose of matching the electrical conductivity with the quantum dots, so as to obtain a more suitable composite material.
  • the cationic surfactant is stearyltrimethylammonium chloride, cetyltrimethylammonium tosylate, octyltrimethylammonium chloride, dodecenyl Di(hydroxyethyl)methylammonium chloride, dodecenyltrimethylammonium chloride, cetyltrimethylammonium chloride, cetyltrimethylammonium bromide, tetradecane trimethylammonium chloride, tetradecyltrimethylammonium bromide, dodecyltrimethylammonium chloride, dodecyltrimethylammonium bromide, decyltrimethylammonium chloride and One or more of decyltrimethylammonium bromide, but not limited thereto.
  • the oxidizing agent is ammonium persulfate or sodium persulfate, and the oxidizing agent is used for the polymerization of pyrrole, so that the finally formed polypyrrole is coated on the surface of the zinc oxide nanoparticles to form a coating film, so as to obtain the the composite material.
  • the zinc salt solution includes an organic alcohol and a zinc salt dispersed in the organic alcohol, the zinc salt is one of zinc acetate, zinc nitrate, zinc chloride, zinc sulfate and zinc acetate dihydrate or more, but not limited to.
  • the organic alcohol is one or more of isopropanol, ethanol, propanol, butanol, amyl alcohol and hexanol, but is not limited thereto.
  • the molar ratio of the zinc ions in the zinc salt to the hydroxide ions in the lye solution is 1:1 -2.
  • the basic compound is one or more of sodium hydroxide, potassium hydroxide, lithium hydroxide and tetramethylammonium hydroxide pentahydrate, but is not limited thereto.
  • a quantum dot light-emitting diode which includes an electron transport layer, and the electron transport layer material is the composite material described in the present disclosure or the composite material prepared by the preparation method described in the present disclosure.
  • the composite material includes zinc oxide nanoparticles and polypyrrole coated on the surface of the zinc oxide nanoparticles.
  • the coating of the polypyrrole can effectively increase the space between the zinc oxide nanoparticles, passivate the surface of the zinc oxide nanoparticles, and reduce the generation of oxygen vacancies; the coating of the polypyrrole can also protect the zinc oxide nanoparticles from Agglomeration occurs; the surface of the pyrrole has N and C atoms, which can effectively provide an electron transport path, improve the electron transport ability, and adjust the carrier balance; the coating of the polypyrrole can also effectively isolate the water and oxygen from the zinc oxide nanoparticles. Erosion, the density of polypyrrole is higher than that of common ligands.
  • the composite material provided in this embodiment can improve the electron transport performance while reducing the agglomeration phenomenon, and enhance the luminous efficiency and display performance of the device.
  • a quantum dot light-emitting diode which further comprises an anode, a cathode, a quantum dot light-emitting layer disposed between the anode and the cathode, and a quantum dot light-emitting layer disposed between the anode and the quantum dot light-emitting layer.
  • a hole functional layer, the electron transport layer is disposed between the cathode and the quantum dot light-emitting layer.
  • a quantum dot light-emitting diode with an upright structure is provided, as shown in FIG. 2 , which includes a substrate 10 , an anode 20 , a hole functional layer 30 , and quantum dots that are sequentially stacked from bottom to top
  • the light-emitting layer 40, the electron transport layer 50 and the cathode 60, the electron transport layer material is the composite material described in this disclosure.
  • the composite material can improve the electron transport performance while reducing the agglomeration phenomenon, the luminous efficiency and display performance of the device can be enhanced.
  • a quantum dot light-emitting diode with an inverted structure which includes a substrate, a cathode, an electron transport layer, a quantum dot light-emitting layer, a hole function layer and an anode that are sequentially stacked from bottom to top, the
  • the electron transport layer material is the composite material described in this disclosure.
  • the hole functional layer may be one or more of an electron blocking layer, a hole injection layer and a hole transport layer, but is not limited thereto.
  • the electron transport layer has a thickness of 70-90 nm.
  • the anode material is selected from indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped One or more of hetero-zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), and aluminum-doped magnesium oxide (AMO), but not limited thereto.
  • ITO indium-doped tin oxide
  • FTO fluorine-doped tin oxide
  • ATO antimony-doped tin oxide
  • AZO aluminum-doped zinc oxide
  • GZO hetero-zinc oxide
  • IZO indium-doped zinc oxide
  • MZO magnesium-doped zinc oxide
  • AMO aluminum-doped magnesium oxide
  • the material of the hole transport layer is selected from organic materials with good hole transport ability, such as but not limited to poly(9,9-dioctylfluorene-CO-N-(4- Butylphenyl)diphenylamine)(TFB), polyvinylcarbazole (PVK), poly(N,N'bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine)( Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4"-tris(carbohydrate) oxazol-9-yl)triphenylamine (TCTA), 4,4'-bis(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methyl) Phenyl)-1,1'-biphen
  • the material of the quantum dot light-emitting layer is selected from one or more of red quantum dots, green quantum dots, and blue quantum dots, and can also be selected from yellow light quantum dots.
  • the material of the quantum dot light-emitting layer is selected from CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, CuInS , CuInSe, and one or more of various core-shell structure quantum dots or alloy structure quantum dots.
  • the quantum dots described in the present disclosure may be selected from cadmium-containing or cadmium-free quantum dots.
  • the quantum dot light-emitting layer of the material has the characteristics of wide excitation spectrum and continuous distribution, and high stability of emission spectrum.
  • the quantum dot light-emitting layer has a thickness of 20-60 nm.
  • the material of the cathode is selected from one or more of conductive carbon materials, conductive metal oxide materials and metal materials; wherein the conductive carbon materials include but are not limited to doped or undoped carbon nanotubes One or more of , doped or undoped graphene, doped or undoped graphene oxide, C60, graphite, carbon fiber and porous carbon; conductive metal oxide materials include but are not limited to ITO, FTO, ATO and one or more of AZO; metal materials include but are not limited to Al, Ag, Cu, Mo, Au, or their alloys; wherein in the metal materials, their forms include but are not limited to dense thin films, nanowires, One or more of nanospheres, nanorods, nanocones, and nanohollow spheres.
  • the thickness of the cathode is 15-30 nm.
  • a method for preparing a quantum dot light-emitting diode with an upright structure is also provided, as shown in FIG. 3 , including the steps:
  • the electron transport layer material is a composite material, and the composite material includes zinc oxide nanoparticles and polypyrrole coated on the surface of the zinc oxide nanoparticles;
  • the preparation method of each layer may be a chemical method or a physical method, wherein the chemical method includes but is not limited to chemical vapor deposition method, continuous ion layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method, and co-precipitation method.
  • One or more; physical methods include but are not limited to solution methods (such as spin coating, printing, blade coating, dip-pulling, immersion, spraying, roll coating, casting, slot coating method or strip coating method, etc.), evaporation method (such as thermal evaporation method, electron beam evaporation method, magnetron sputtering method or multi-arc ion coating method, etc.), deposition method (such as physical vapor deposition method, atomic One or more of layer deposition method, pulsed laser deposition method, etc.).
  • solution methods such as spin coating, printing, blade coating, dip-pulling, immersion, spraying, roll coating, casting, slot coating method or strip coating method, etc.
  • evaporation method such as thermal evaporation method, electron beam evaporation method, magnetron sputtering method or multi-arc ion coating method, etc.
  • deposition method such as physical vapor deposition method, atomic One or more of layer deposition method, pulsed laser deposition method, etc.
  • the step of preparing the electron transport layer on the quantum dot light-emitting layer specifically includes: placing the substrate on which the quantum dot light-emitting layer has been prepared on a spin coater, and spin-coating the composite material solution onto the substrate , and annealed at 100 °C to prepare an electron transport layer.
  • the step of preparing the cathode on the electron transport layer specifically includes: placing the substrate on which each functional layer has been deposited into an evaporation chamber and thermally vapor-depositing a layer of 15-30 nm metallic silver through a mask.
  • a mask for vapor-depositing a layer of 15-30 nm metallic silver through a mask.
  • aluminum or the like can be used as the cathode, or nano-Ag wires or Cu wires can be used.
  • the above-mentioned materials have relatively low resistance so that carriers can be injected smoothly.
  • a method for preparing a quantum dot light-emitting diode with an inverted structure is also provided, as shown in FIG. 4 , which includes the steps:
  • the electron transport layer material is a composite material, and the composite material includes zinc oxide nanoparticles and polypyrrole coated on the surface of the zinc oxide nanoparticles;
  • the obtained quantum dot light-emitting diode is subjected to a packaging process, and the packaging process can be packaged by a common machine or by manual packaging.
  • the oxygen content and the water content are both lower than 0.1 ppm, so as to ensure the stability of the QLED device.
  • a composite material, a preparation method thereof, and a quantum dot light-emitting diode of the present disclosure will be further explained below through specific examples:
  • Embodiment 1 The present disclosure provides an embodiment, in Embodiment 1:
  • a substrate which is provided with an ITO anode
  • Example 5 The composite material obtained in Example 1 and the pure polypyrrole were tested by Fourier transform infrared spectroscopy. The results are shown in Figure 5. It can be seen from Figure 5 that the apparent peak intensity of the infrared spectrum of pure polypyrrole is weaker than the described The infrared spectrum of the composite material has obvious peak intensity, which proves that some of the C-N and N-H bonds in the composite material have been combined with zinc oxide, so the intensity becomes weak; The migration phenomenon proves that polypyrrole and zinc oxide have a strong connection relationship, indicating that the surface of zinc oxide nanoparticles in the composite material is coated with polypyrrole.
  • Embodiment 2 provides another embodiment, in Embodiment 2:
  • a substrate which is provided with an ITO anode
  • Embodiment 3 provides yet another embodiment, in Embodiment 3:
  • the composite material provided by the present disclosure includes zinc oxide nanoparticles and polypyrrole coated on the surface of the zinc oxide nanoparticles.
  • the coating of the polypyrrole can effectively increase the space between the zinc oxide nanoparticles, passivate the surface of the zinc oxide nanoparticles, and reduce the generation of oxygen vacancies; the coating of the polypyrrole can also protect the zinc oxide nanoparticles from Agglomeration occurs; the surface of the pyrrole has N, C atoms, which can effectively provide an electron transport path and improve the electron transport capacity; the coating of the polypyrrole can also effectively isolate the corrosion of the zinc oxide nanoparticles by water and oxygen, compared with ordinary Ligand, polypyrrole is more dense.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Optics & Photonics (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un matériau composite et son procédé de préparation, ainsi qu'une diode électroluminescente à points quantiques. Le matériau composite comprend des nanoparticules d'oxyde de zinc et du polypyrrole revêtu sur la surface des nanoparticules d'oxyde de zinc. Dans le matériau composite de la présente invention, le revêtement de polypyrrole peut augmenter efficacement l'espacement entre les nanoparticules d'oxyde de zinc, passiver la surface des nanoparticules d'oxyde de zinc et réduire la génération de lacunes d'oxygène, et le revêtement de polypyrrole peut également protéger les nanoparticules d'oxyde de zinc de l'agglomération. Les atomes N et C sont présents sur la surface du pyrrole, et peuvent fournir efficacement un trajet de transport électronique et améliorer la capacité de transport électronique. Le revêtement de polypyrrole peut également isoler efficacement l'érosion des nanoparticules d'oxyde de zinc par de l'eau et de l'oxygène, et la compacité du polypyrrole est supérieure à celle d'un ligand commun.
PCT/CN2021/142131 2020-12-30 2021-12-28 Matériau composite et son procédé de préparation et diode électroluminescente à points quantiques WO2022143676A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011609538.4A CN114695810A (zh) 2020-12-30 2020-12-30 一种复合材料及其制备方法、量子点发光二极管
CN202011609538.4 2020-12-30

Publications (1)

Publication Number Publication Date
WO2022143676A1 true WO2022143676A1 (fr) 2022-07-07

Family

ID=82132584

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/142131 WO2022143676A1 (fr) 2020-12-30 2021-12-28 Matériau composite et son procédé de préparation et diode électroluminescente à points quantiques

Country Status (2)

Country Link
CN (1) CN114695810A (fr)
WO (1) WO2022143676A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115247002A (zh) * 2022-08-08 2022-10-28 安徽锦华氧化锌有限公司 一种导静电氧化锌的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107275611A (zh) * 2017-06-19 2017-10-20 南昌航空大学 一种聚吡咯包覆的纳米球状氧化锌材料及制备方法
CN112538163A (zh) * 2019-09-23 2021-03-23 Tcl集团股份有限公司 复合材料及其制备方法和量子点发光二极管

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107275611A (zh) * 2017-06-19 2017-10-20 南昌航空大学 一种聚吡咯包覆的纳米球状氧化锌材料及制备方法
CN112538163A (zh) * 2019-09-23 2021-03-23 Tcl集团股份有限公司 复合材料及其制备方法和量子点发光二极管

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GONZÁLEZ-CASAMACHIN DIEGO ALEXANDER, RIVERA DE LA ROSA JAVIER, LUCIO-ORTIZ CARLOS J., DE HARO DE RIO DAVID A., MARTÍNEZ-VARGAS DAN: "Visible-light photocatalytic degradation of acid violet 7 dye in a continuous annular reactor using ZnO/PPy photocatalyst: Synthesis, characterization, mass transfer effect evaluation and kinetic analysis", CHEMICAL ENGENEERING JOURNAL, ELSEVIER, AMSTERDAM, NL, vol. 373, 1 October 2019 (2019-10-01), AMSTERDAM, NL , pages 325 - 337, XP055948124, ISSN: 1385-8947, DOI: 10.1016/j.cej.2019.05.032 *
LI HAIPENG, YANG SHUANG, ZHAO YAN, TAN TAIZHE, WANG XIN, BAKENOV ZHUMABAY: "Synthesis of ZnO/Polypyrrole Nanoring Composite as High-Performance Anode Materials for Lithium Ion Batteries", JOURNAL OF NANOMATERIALS, HINDAWI PUBLISHING CORPORATION, US, vol. 2019, 3 March 2019 (2019-03-03), US , pages 1 - 8, XP055948109, ISSN: 1687-4110, DOI: 10.1155/2019/4702849 *
XUAN THANG CAO ET AL.: "Preparation and Characterization of Poly(4-vinylpyridine) Encapsulated Zinc Oxide by Surface-Initiated RAFT Polymerization", MOLECULAR CRYSTALS AND LIQUID CRYSTALS, vol. 599, no. 1, 13 August 2014 (2014-08-13), XP009537896, ISSN: 1542-1406, DOI: 10.1080/15421406.2014.935921 *

Also Published As

Publication number Publication date
CN114695810A (zh) 2022-07-01

Similar Documents

Publication Publication Date Title
US11329245B2 (en) Electron transport thin film and formation method and light emitting diode device
CN109962179B (zh) 一种薄膜及其制备方法与qled器件
CN113903865B (zh) 氧化锌纳米材料及其制备方法、发光器件
US11744098B2 (en) Quantum dot light-emitting diode and preparation method therefor
CN112538163A (zh) 复合材料及其制备方法和量子点发光二极管
WO2022143676A1 (fr) Matériau composite et son procédé de préparation et diode électroluminescente à points quantiques
CN113130790B (zh) 一种纳米材料及其制备方法与量子点发光二极管
CN113817455B (zh) 无机化合物复合材料、量子点发光二极管及其制备方法
CN113046077B (zh) 一种复合材料、量子点发光二极管及其制备方法
CN113120952B (zh) 一种硫化锌纳米材料及其制备方法、硫化锌薄膜、量子点发光二极管
CN112397661B (zh) 一种纳米材料及其制备方法与量子点发光二极管
WO2020261346A1 (fr) Procédé de production d'élément électroluminescent, et élément électroluminescent
CN114695807A (zh) 一种复合材料及其制备方法、发光二极管
CN113809245B (zh) 氧化锌纳米材料及其制备方法、半导体器件
CN113707777A (zh) 复合材料及其制备方法、发光器件
WO2023051317A1 (fr) Nanomatériau d'oxyde de tungstène et son procédé de préparation et dispositif optoélectronique
CN114695813A (zh) 一种复合材料及其制备方法、发光二极管
WO2024078562A1 (fr) Film et son procédé de préparation, et dispositif photoélectrique
WO2023041046A1 (fr) Dispositif photoélectrique et son procédé de fabrication, et dispositif d'affichage
US20230157045A1 (en) Nanomaterial, preparation method thereof, and quantum dot light-emitting diode
CN113823568B (zh) 氧化锌薄膜及其制备方法、量子点发光二极管
CN112397671B (zh) 一种改性硫化锌及其制备方法与量子点发光二极管
CN112397673B (zh) 量子点发光二极管及其制备方法
CN113120951A (zh) 一种双金属共掺杂硫化锌薄膜及其制备方法与量子点发光二极管
CN114520297A (zh) 纳米材料及其制备方法和量子点发光二极管

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21914410

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21914410

Country of ref document: EP

Kind code of ref document: A1