WO2023038281A1 - Appareil et procédé de synthèse de matériau en poudre à l'aide de plasma à étapes multiples en série - Google Patents

Appareil et procédé de synthèse de matériau en poudre à l'aide de plasma à étapes multiples en série Download PDF

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WO2023038281A1
WO2023038281A1 PCT/KR2022/010666 KR2022010666W WO2023038281A1 WO 2023038281 A1 WO2023038281 A1 WO 2023038281A1 KR 2022010666 W KR2022010666 W KR 2022010666W WO 2023038281 A1 WO2023038281 A1 WO 2023038281A1
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plasma
powder
reaction space
plasma reaction
synthesizer
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PCT/KR2022/010666
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Korean (ko)
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신동수
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(주)에스플러스컴텍
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/126—Microwaves
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • the present invention relates to a powder material synthesis technology, and more particularly, to an apparatus and method suitable for synthesizing a powder material for a negative electrode material of a secondary battery.
  • Silicon alloys with lithium to form a Li 12 Si 5 phase and the theoretical capacity reaches 4008 mAh/g.
  • This has a high capacity of more than 10 times that of graphite, and is attracting attention as a new material that can overcome the limitations of existing lithium secondary batteries mainly using graphite as an anode material.
  • the silicon electrode degrades due to a volume change of more than 300% during charging and discharging, and most of the capacity is lost within 10 cycles. This is because electrical contact is lost as expansion and contraction are continuously repeated during the charging and discharging process, and thus electrode resistance rapidly increases.
  • a method of using an active/inactive compound or a composite material in which an inactive material capable of buffering a volume change without reacting with lithium is added is being studied.
  • Korean Patent Registration No. 10-2012599 discloses a wet treatment of the exothermic reaction between STC (SiCl 4 ) and ethylene glycol, automating a series of processes such as sintering and transfer, effectively using nano-powder for secondary battery anode materials.
  • An apparatus and method for producing SiOx powder is described.
  • An object of the present invention is to provide a powder material synthesis apparatus and method using plasma.
  • a further object of the present invention is to provide an apparatus and method for synthesizing a powder material for a negative electrode material of a secondary battery using plasma.
  • a first plasma generating module for forming a first plasma reaction space, and a second plasma reaction space located downstream of the first plasma reaction space
  • a plasma powder synthesizer including a second plasma generating module to form a third plasma generating module and a third plasma generating module to form a third plasma reaction space located downstream of the second plasma reaction space
  • a plurality of heterogeneous basic materials are synthesized by plasma to generate a first powder compound in powder form, and in the second plasma reaction space, the first powder compound and the first additional material are synthesized by plasma to produce a second powder compound in powder form.
  • a powder material synthesizing apparatus is provided in which a powder compound is generated, and a third powder compound in a powder form is generated by synthesizing the second powder compound and a second additional material by plasma in the third plasma reaction space.
  • a first plasma synthesis step in which a plurality of heterogeneous base materials are synthesized in a first plasma reaction space to generate a first powder compound in powder form; a second plasma synthesis step of synthesizing the first powder compound and the first additional material in a second plasma reaction space to generate a second powder compound in powder form; and a third plasma synthesis step of synthesizing the second powder compound and the second additional material in a third plasma reaction space to generate a third powder compound in powder form.
  • a plurality of heterogeneous basic materials are synthesized by plasma in the first plasma reaction space to generate a first powder compound in powder form, and in the second plasma reaction space, the first powder compound and the first additional material are synthesized by plasma.
  • silicon (Si) and silicon dioxide (SiO 2 ) are synthesized in the first plasma reaction space to generate silicon oxide represented by SiO X (0 ⁇ X ⁇ 2) as a first powder compound, and a second plasma reaction space
  • SiO X (0 ⁇ X ⁇ 2) is synthesized with carbon nanotubes or carbon nanofibers, which are carbon materials, to produce a second powder compound, and in the third plasma reaction space, the second powder compound and the carbon material are synthesized.
  • a powder material suitable for an anode material of a secondary battery can be efficiently synthesized.
  • FIG. 1 is a block diagram showing a schematic configuration of a powder material synthesizing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing a schematic configuration of a plasma powder synthesizer of the powder material synthesizing apparatus shown in FIG. 1 .
  • FIG. 3 is a flowchart schematically illustrating a powder material synthesis method according to an embodiment of the present invention.
  • a powder material synthesis apparatus 100 includes a plasma powder synthesizer 110 synthesizing a powder material using a plasma reaction and plasma generation in the plasma powder synthesizer 110.
  • the powder material synthesizing apparatus 100 is described as synthesizing a powder material for a negative electrode material of a secondary battery, but the present invention is not limited thereto.
  • the plasma powder synthesizer 110 synthesizes a powder material using a plasma reaction.
  • 2 shows a schematic configuration of the plasma powder synthesizer 110. Referring to FIG. 2, the plasma powder synthesizer 110 generates a first plasma that generates a plasma for generating a first powder mixture H by synthesizing a first base material D and a second base material E.
  • the module 120 and the first plasma generating module 120 generate a plasma for synthesizing the first powder compound (H) and the first additional material (K) to generate a second powder compound (M)
  • a plasma for synthesizing the second plasma generating module 130, the second powder composition (M) generated in the second plasma generating module 130, and the second additional material (G)
  • the third plasma generating module 140 for generating plasma, the first intermediate passage part 150 positioned between the first plasma generating module 120 and the second plasma generating module 130, and the second plasma generating module
  • the second intermediate passage part 160 located between the module 130 and the third plasma generating module 140, the base material introduction part 171 located upstream of the first plasma generating module 120,
  • a synthetic powder discharge unit 176 located on the downstream side of the third plasma generating module 140 is included.
  • the plasma powder synthesizer 110 sequentially includes a base material introduction part 171, a first plasma generating module 120, a first intermediate passage part 150, and a second plasma generating module 130 along the vertical downward direction. ), the second intermediate passage 160, the third plasma generating module 140, and the synthetic powder discharge unit 176 are sequentially connected in series. Accordingly, the powder naturally falls and moves downward in the plasma powder synthesizer 110 by gravity.
  • Base material introduction part 171, first plasma generating module 120, first intermediate passage part 150, second plasma generating module 130, second intermediate passage part 160, third plasma generating module 140 ), and each of the composite powder discharge units 176 may be detachably coupled with other adjacent components.
  • the first plasma generation module 120 generates plasma for generating a first powder compound H by synthesizing the first base material D and the second base material E.
  • the first base material (D) is silicon (Si) in powder form
  • the second base material (E) is silicon dioxide (SiO 2 ) in powder form
  • the first powder compound (H) is SiO X It is a silicon oxide in powder form expressed as (0 ⁇ X ⁇ 2).
  • the first plasma generating module 120 forms a first plasma reaction space A by plasma.
  • silicon (Si) as the first base material (D) and silicon dioxide (SiO 2 ) as the second base material (E) are synthesized by plasma reaction to form a first powder compound (H).
  • the first plasma generating module 120 forms a first plasma reaction space A by using a discharge generated between the first electrode 121 and the second electrode 122 .
  • the first plasma generating module 120 receives DC or AC power from the first power source 180 and discharges between the two electrodes 121 and 122 .
  • the first plasma generation module 120 may have a configuration disclosed in Registered Utility Model No. 20-0425109.
  • the base material introduction part 171 and the first intermediate passage part 150 are positioned above and below the first plasma generating module 120 in the vertical direction (direction of gravity), respectively.
  • a first reaction space inlet 123 is formed at an upper end of the first plasma reaction space A, and a first reaction space outlet 124 is formed at a lower end of the first plasma reaction space A.
  • the first plasma reaction space A communicates with the inner space of the base material introduction part 171 .
  • silicon (Si) as the first base material (D) and silicon dioxide (SiO 2 ) as the second base material (E) are discharged together with the discharge gas into the first plasma reaction space (A). flowed into In the first plasma reaction space (A), the powder moves while falling down from the first reaction space inlet 123 toward the first reaction space outlet 124 by gravity.
  • the first plasma reaction space A communicates with the inner space of the first intermediate passage 150 through the first reaction space outlet 124 .
  • Silicon oxide (SiO X ) which is the first powder compound (H) generated in the first plasma reaction space (A), is discharged from the first plasma reaction space (A) through the first reaction space discharge port 124, so that the first intermediate It flows into the inner space of the passage part 150.
  • the second plasma generating module 130 synthesizes silicon oxide (SiO X ), which is the first powder compound H generated in the first plasma generating module 120, and the first additional material K to form a second powder compound ( M) to generate plasma for generating.
  • the first additional material (K) is a carbon material and is described as being a carbon nanotube (CNT). It may be all inclusive.
  • the second plasma generating module 130 forms a second plasma reaction space B by plasma. In the second plasma reaction space (B), silicon oxide (SiO X ), which is the first powder compound (H) in powder form, and carbon nanotube (CNT), which is the first additional material (K), are synthesized by plasma reaction to form powder. A second powder composite (M) of is produced.
  • the second powder composite (M) has a structure in which a plurality of carbon nanotubes (CNTs) are bonded over the entire surface of silicon oxide (SiO X ).
  • the second plasma generating module 130 forms a second plasma reaction space B using inductively coupled plasma by a radio frequency power source.
  • the second plasma generating module 130 generates inductively coupled plasma by receiving high frequency power from the second power source 183 .
  • the second plasma generating module 130 may have a structure disclosed in Korean Patent Registration No. 10-2155631.
  • the first intermediate passage part 150 and the second intermediate passage part 160 are positioned above and below the second plasma generating module 130 in the vertical direction (direction of gravity), respectively.
  • a second reaction space inlet 133 is formed at an upper end of the second plasma reaction space B, and a second reaction space outlet 134 is formed at a lower end of the second plasma reaction space B.
  • the second plasma reaction space B communicates with the inner space of the first intermediate passage 150 .
  • silicon oxide (SiO X ) which is the first powder compound (H) in powder form
  • carbon nanotube (CNT) which is the first additional material (K)
  • the second plasma reaction space B communicates with the inner space of the second intermediate passage 160 through the second reaction space outlet 134 .
  • the second powder compound (M) generated in the second plasma reaction space (B) is discharged from the second reaction space (B) through the second reaction space outlet 134 to enter the second intermediate passage (160). enters the space
  • the third plasma generating module 140 is a plasma for generating a third powder composite F by synthesizing the second powder composite M generated in the second plasma generating module 130 and the second additional material G. causes
  • the second additional material (G) is a carbon material, which will be described as graphene.
  • the third plasma generating module 140 forms a third plasma reaction space (C) by plasma.
  • a second powder compound (M) in powder form and graphene as a second additional material (G) are synthesized by a plasma reaction to produce a third powder compound (F) in powder form.
  • the third powder composition (F) has a structure in which graphene is coated on the surface of the second powder composition (M).
  • the third plasma generation module 140 generates plasma using microwaves to form a third plasma reaction space (C).
  • the third plasma generating module 140 generates plasma by receiving microwaves from the microwave generator 188 .
  • the third plasma generation module 140 may have a configuration disclosed in Korean Patent Registration No. 10-1913721.
  • a third reaction space inlet 143 is formed at an upper end of the third plasma reaction space C, and a third reaction space outlet 144 is formed at a lower end of the third plasma reaction space C. Through the third reaction space inlet 143 , the third plasma reaction space C communicates with the inner space of the second intermediate passage 160 .
  • the second powder compound M and graphene as a second additional material are introduced into the third plasma reaction space C together with the discharge gas.
  • the powder moves while falling down from the third reaction space inlet 143 toward the third reaction space outlet 144 by gravity.
  • the third plasma reaction space C communicates with the inner space of the synthetic powder outlet 176 .
  • the third powder compound F generated in the third plasma reaction space C through the third reaction space outlet 144 is discharged from the plasma reaction space C as a final synthesized material to form a composite powder discharge unit 176. enters the inner space.
  • the first intermediate passage 150 is located between the first plasma generating module 120 and the second plasma generating module 130 .
  • the first intermediate passage portion 150 provides a first intermediate passage 151 therein.
  • the first plasma reaction space A is located above the first intermediate passage 151 in the vertical direction and the second plasma reaction space B is located below the first intermediate passage 151 in the vertical direction.
  • the first intermediate passage 151 communicates with the first plasma reaction space A through the first reaction space outlet 124 and communicates with the second plasma reaction space B through the second reaction space inlet 133. do.
  • a first additional material supply port 155 communicating with the first intermediate passage 151 is formed in the first intermediate passage 150 .
  • Carbon nanotubes (CNTs) as the first additional material K are supplied to the first intermediate passage 151 through the first additional material supply port 155 .
  • silicon oxide (SiO X ), which is the first powder compound (H), and carbon nanotube (CNT), which is the first additional material (K), are evenly mixed, and pass through the second reaction space inlet (133).
  • the second plasma is introduced into the reaction space (B). It is preferable that the bottom 157 of the first intermediate passage 151 narrows downward toward the second reaction space inlet 133 so that the powder can easily fall.
  • the second intermediate passage 160 is located between the second plasma generating module 130 and the third plasma generating module 140 .
  • the second intermediate passage portion 160 provides a second intermediate passage 161 therein.
  • the second plasma reaction space B is located above the second intermediate passage 161 in the vertical direction and the third plasma reaction space C is located below the second intermediate passage 161 in the vertical direction.
  • the second intermediate passage 161 communicates with the second plasma reaction space B through the second reaction space outlet 134 and communicates with the third plasma reaction space C through the third reaction space inlet 143. do.
  • a second additional material supply port 165 communicating with the second intermediate passage 161 is formed in the second intermediate passage 160 .
  • Graphene which is the second additional material G, is supplied to the second intermediate passage 161 through the second additional material supply port 165 .
  • the second powder compound (M) and the second additional material (G), graphene are evenly mixed and introduced into the third plasma reaction space (C) through the third reaction space inlet 143. do. It is preferable that the bottom 167 of the second intermediate passage 161 narrows downward toward the third reaction space inlet 143 so that the powder can fall easily.
  • the base material introduction unit 171 is located above the first plasma generating module 120 .
  • the base material introduction part 171 provides a base material introduction space 172 therein.
  • the first plasma reaction space (A) is located below the base material introduction space 172 in the vertical direction.
  • the base material introduction space 172 communicates with the first plasma reaction space A through the first reaction space inlet 123 .
  • a base material supply port 173 communicating with the base material introduction space 176 is formed in the base material introduction part 171 .
  • silicon dioxide (SiO 2 ) in the form of powder as the first base material (D) and silicon dioxide (SiO 2 ) in the form of powder as the second base material (E) is introduced into the base material introduction space (172).
  • Discharge gas may also be supplied to the base material introduction space 172 through the base material supply port 173 .
  • powdered silicon (Si) as the first base material (D) and powdered silicon dioxide (SiO 2 ) as the second base material (E) are evenly mixed, and the first reaction space inlet ( 123) into the first plasma reaction space (A). It is preferable that the bottom 174 of the base material introduction space 172 narrows downward toward the first reaction space inlet 123 so that the powder can fall easily.
  • the synthetic powder discharge unit 176 is located below the third plasma generating module 140 .
  • the synthetic powder discharge unit 176 provides a synthetic powder discharge space 177 therein.
  • a third plasma reaction space (C) is located above the synthetic powder discharge space 177 in a vertical direction.
  • the synthetic powder discharge space 177 communicates with the third plasma reaction space C through the third reaction space discharge port 144 .
  • a compound powder outlet 178 communicating with the compound powder discharge space 177 is formed in the compound powder discharge unit 176 .
  • the third powder compound F is discharged to the outside of the plasma powder synthesizer 110 through the synthesized powder outlet 178 .
  • the synthetic powder discharge port 178 is formed at the bottom 179 of the compound powder discharge space 177 .
  • the bottom 179 of the synthetic powder discharge space 177 is preferably narrower downward toward the synthetic powder discharge port 178 so that the third powder compound F can be easily dropped.
  • the first, second, and third plasma reaction spaces A, B, and C, the first and second intermediate passages 150 and 160, the base material introduction unit 171 and the synthesized powder discharge unit 176 communicate with each other. and has a tubular structure integrally formed.
  • the first power source 180 supplies DC or AC power to the two electrodes 121 and 122 of the first plasma generating module 120 of the plasma powder synthesizer 110 to form the first plasma reaction space A. .
  • the second power supply 183 supplies high frequency power to the second plasma generating module 130 of the plasma powder synthesizer 110 to form the second plasma reaction space B by inductively coupled plasma.
  • the microwave generator 188 generates microwaves so that the third plasma generation module 140 can form the third plasma reaction space C using microwaves.
  • the microwave generated by the microwave generator 188 is transmitted to the third plasma generating module 140 through a waveguide.
  • the discharge gas supplier 190 supplies discharge gas required for plasma discharge to the plasma powder synthesizer 110 .
  • the discharge gas supplied through the discharge gas supplier 190 will be described as flowing into the base material introduction space 172 through the base material supply port 173 of the plasma powder synthesizer 110 .
  • the first base material supplier 192 supplies silicon (Si) in powder form as the first base material D to the plasma powder synthesizer 110 .
  • the first base material D supplied through the first base material supplier 192 is introduced into the base material introduction space 172 through the base material supply port 173 of the plasma powder synthesizer 110 .
  • the first base material supplier 192 supplies silicon (Si) as the first base material (D), but it may vary depending on the target synthetic powder material, which is also within the scope of the present invention. it belongs
  • the second base material supplier 194 supplies silicon dioxide (SiO 2 ) in powder form, which is the second base material, to the plasma powder synthesizer 110 .
  • the second base material supplied through the second base material supplier 194 is introduced into the base material introduction space 172 through the base material supply port 173 of the plasma powder synthesizer 110 .
  • the second base material supplier 194 is described as supplying silicon dioxide (SiO 2 ) as the second base material (E), but it may vary depending on the target synthetic powder material, which is also of the present invention. that falls within the scope
  • the first additional material supplier 196 supplies powdered carbon nanotubes (CNT) as the first additional material K to the plasma powder synthesizer 110 .
  • the first additional material K supplied through the first additional material supplier 196 is introduced into the first intermediate passage 151 through the first additional material supply port 155 of the plasma powder synthesizer 110 .
  • the first additional material supplier 196 supplies carbon nanotubes (CNT) as the first additional material K, but it may vary depending on the target composite powder material, which is also of the present invention. that falls within the scope
  • the second additional material supplier 198 supplies graphene in powder form, which is the second additional material G, to the plasma powder synthesizer 110 .
  • Graphene which is the second additional material G supplied through the second additional material supplier 198, flows into the second intermediate passage 161 through the second additional material supply port 165 of the plasma powder synthesizer 110. do.
  • the second additional material supplier 198 is described as supplying graphene as the second additional material G, but it may vary depending on the target synthetic powder material, and this also falls within the scope of the present invention. .
  • FIG. 3 is a flowchart schematically illustrating a powder material synthesis method according to an embodiment of the present invention.
  • a powder material synthesizing method according to an embodiment of the present invention uses the powder material synthesizing apparatus 100 described with reference to FIGS. 1 and 2, and referring to FIG. 3 together with FIGS. 1 and 2, a plurality of powder forms.
  • the base material input step (S10) in which the heterogeneous base materials (D, E) of is input into the plasma powder synthesizer 110, and the heterogeneous base materials (D, E) are synthesized by plasma reaction in the plasma powder synthesizer 110
  • the base material input step (S10) a plurality of heterogeneous base materials (D, E) in powder form are input into the plasma powder synthesizer 110.
  • the plurality of heterogeneous base materials (D, E) are silicon (Si) as the first base material (D) and silicon dioxide (SiO 2 ) as the second base material (E), which is the third base material (D).
  • the powder compound (F) is a powder material for a negative electrode material of a secondary battery
  • the present invention is not limited thereto, and according to the structure of the third powder compound (F), a plurality of heterogeneous basic materials introduced in the basic material input step (S10) The type of materials may vary.
  • the first base material (D) is introduced into the base material introduction space 172 through the base material supply port 173 of the plasma powder synthesizer 110 by the first base material supplier 192.
  • the second base material E is introduced into the base material introduction space 172 through the base material supply port 173 of the plasma powder synthesizer 110 by the second base material supplier 194.
  • the first base material (D) and the second base material (E) introduced into the base material introduction space 172 through the base material inputting step (S10) fall naturally by gravity and flow into the first plasma reaction space (A). do. While the basic material inputting step (S10) is performed, the discharge gas may also flow into the basic material introducing space 172.
  • the heterogeneous base materials D and E are synthesized by plasma reaction in the plasma powder synthesizer 110 to generate a first powder compound H in powder form.
  • silicon (Si) as the first base material (D) and silicon dioxide (SiO 2 ) as the second base material (E) are subjected to a plasma reaction in the first plasma reaction space (A). It is synthesized and performed by The first powder compound (H) generated in the first plasma synthesis step (S20) naturally falls by gravity from the first plasma reaction space (A) and flows into the first intermediate passage (151).
  • the first additional material K in the form of powder is input into the plasma powder synthesizer 110.
  • the first additional material (K) is carbon nanotube (CNT) or carbon nanofiber (CNF), which is the case where the third powder compound (F) is a powder material for a negative electrode material of a secondary battery.
  • the present invention is not limited thereto, and the type of the first additional material (K) introduced in the first additional material input step (S30) may vary according to the structure of the third powder composite (F).
  • the first additional material (K) is supplied by the first additional material supplier 196 through the first additional material supply port 155 of the plasma powder synthesizer 110 through the first intermediate passage It is performed by flowing into (151).
  • the first additional material (K) introduced into the first intermediate passage (151) through the first additional material inputting step (S30) naturally falls by gravity together with the first powder compound (H) to form a second plasma reaction space (B). ) is introduced into
  • the first powder compound (H) and the first additional material (K) are synthesized by plasma reaction in the plasma powder synthesizer 110 to produce a second powder compound (M) in powder form. do.
  • the first powder composite (H) and the first additional material (K), such as carbon nanotubes (CNTs) or carbon nanofibers (CNFs) are combined into a plasma in the second plasma reaction space (B). It is synthesized and carried out by reaction.
  • the second powder compound M generated in the second plasma synthesis step (S40) naturally falls from the second plasma reaction space (B) by gravity and flows into the second intermediate passage 161.
  • the second additional material (G) in the form of powder is input into the plasma powder synthesizer 110.
  • the second additional material (G) is graphene, which is the case where the third powder compound (F) is a powder material for a negative electrode material of a secondary battery, and the present invention is not limited thereto, and the third powder compound (F)
  • the type of the second additional material (G) introduced in the second additional material inputting step (S50) may vary according to the structure of the composite (F).
  • the second additional material (G) is supplied by the second additional material supplier 198 through the second additional material supply port 165 of the plasma powder synthesizer 110 through the second intermediate passage It is carried out by flowing into (161).
  • the second additional material (G) introduced into the second intermediate passage 161 through the second additional material inputting step (S50) naturally falls by gravity together with the second powder compound (M) to the third plasma reaction space (C ) is introduced into
  • the second powder compound (M) and the second additional material (G) are synthesized by plasma reaction in the plasma powder synthesizer 110, and the third powder compound (F) in powder form is synthesized. do.
  • the third plasma synthesis step (S60) is performed by synthesizing the second powder compound (M) and graphene as the second additional material (G) by plasma reaction in the third plasma reaction space (C).
  • the third powder compound F generated in the third plasma synthesis step S60 naturally falls from the third plasma reaction space C by gravity and flows into the synthesized powder discharge space 177 .
  • the first base material (D), the second base material (E), the first additional material (K), and the second additional material (G) introduced into the plasma powder synthesizer 110 are described as being in powder form.
  • the present invention is not limited thereto, and liquid or gas phase is also possible, which also falls within the scope of the present invention.

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Abstract

La présente invention concerne un appareil de synthèse d'un matériau en poudre, l'appareil comprenant : un premier module de production de plasma permettant de former un premier espace de réaction à plasma ; un deuxième module de production de plasma permettant de former un deuxième espace de réaction à plasma situé en aval du premier espace de réaction à plasma ; et un dispositif de synthèse de poudre par plasma comportant un troisième module de production de plasma permettant de former un troisième espace de réaction à plasma situé en aval du deuxième espace de réaction à plasma. Dans le premier espace de réaction à plasma, une pluralité de matières de base hétérogènes sont synthétisées par plasma afin de produire un premier produit de synthèse en poudre, sous forme de poudre. Dans le deuxième espace de réaction à plasma, le premier produit de synthèse en poudre et un premier matériau supplémentaire sont synthétisés par plasma afin de produire un deuxième produit de synthèse en poudre, sous forme de poudre. Dans le troisième espace de réaction à plasma, le deuxième produit de synthèse en poudre et un second matériau supplémentaire sont synthétisés par plasma afin de produire un troisième produit de synthèse en poudre, sous forme de poudre.
PCT/KR2022/010666 2021-09-09 2022-07-21 Appareil et procédé de synthèse de matériau en poudre à l'aide de plasma à étapes multiples en série WO2023038281A1 (fr)

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KR102359101B1 (ko) * 2021-09-09 2022-02-08 주식회사 에스플러스컴텍 직렬 다단 플라즈마를 이용한 분말 소재 합성 장치 및 방법

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JP5667099B2 (ja) * 2006-08-10 2015-02-12 コーニング インコーポレイテッド 粒子合成用装置
KR101623343B1 (ko) * 2014-09-23 2016-05-23 한국지질자원연구원 마이크로웨이브 플라즈마 시스템을 이용한 구겨진 그래핀-탄소 나노입자 복합체의 제조 방법 및 그로부터 제조된 구겨진 그래핀-탄소 나노입자 복합체
JP6352917B2 (ja) * 2013-07-30 2018-07-04 東京印刷機材トレーディング株式会社 ＳｉＯＸ粉末製造法及びＳｉＯＸ粉末製造装置
CN109676146A (zh) * 2019-03-04 2019-04-26 孟召阳 金属合金粉末制备方法
KR102359101B1 (ko) * 2021-09-09 2022-02-08 주식회사 에스플러스컴텍 직렬 다단 플라즈마를 이용한 분말 소재 합성 장치 및 방법

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JP5667099B2 (ja) * 2006-08-10 2015-02-12 コーニング インコーポレイテッド 粒子合成用装置
JP6352917B2 (ja) * 2013-07-30 2018-07-04 東京印刷機材トレーディング株式会社 ＳｉＯＸ粉末製造法及びＳｉＯＸ粉末製造装置
KR101623343B1 (ko) * 2014-09-23 2016-05-23 한국지질자원연구원 마이크로웨이브 플라즈마 시스템을 이용한 구겨진 그래핀-탄소 나노입자 복합체의 제조 방법 및 그로부터 제조된 구겨진 그래핀-탄소 나노입자 복합체
CN109676146A (zh) * 2019-03-04 2019-04-26 孟召阳 金属合金粉末制备方法
KR102359101B1 (ko) * 2021-09-09 2022-02-08 주식회사 에스플러스컴텍 직렬 다단 플라즈마를 이용한 분말 소재 합성 장치 및 방법

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