WO2023002860A1 - Mécanisme de porte, dispositif de traitement de substrat et procédé de nettoyage de substrat - Google Patents

Mécanisme de porte, dispositif de traitement de substrat et procédé de nettoyage de substrat Download PDF

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Publication number
WO2023002860A1
WO2023002860A1 PCT/JP2022/027005 JP2022027005W WO2023002860A1 WO 2023002860 A1 WO2023002860 A1 WO 2023002860A1 JP 2022027005 W JP2022027005 W JP 2022027005W WO 2023002860 A1 WO2023002860 A1 WO 2023002860A1
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Prior art keywords
valve body
chamber
loading
door mechanism
unloading port
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PCT/JP2022/027005
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English (en)
Japanese (ja)
Inventor
俊充 酒井
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東京エレクトロン株式会社
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Publication of WO2023002860A1 publication Critical patent/WO2023002860A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

Definitions

  • the present disclosure relates to a door mechanism, a substrate processing apparatus, and a substrate cleaning method.
  • Patent Document 1 discloses a cooling storage that removes fluorine remaining on the surface of the substrate.
  • the cooling storage has a processing chamber containing substrates, a moisture supply mechanism, an inert gas supply mechanism, and an exhaust mechanism.
  • the processing chamber has a port on its side wall, and the substrate is transferred into and out of the processing chamber through the port.
  • the port is closed by an openable/closable gate valve.
  • the technique according to the present disclosure processes a plurality of substrates using a processing gas, and then efficiently removes gas components remaining on the substrates using a plurality of chambers.
  • One aspect of the present disclosure is a door mechanism provided at a substrate loading/unloading port formed in a chamber of a substrate processing apparatus, comprising: a valve body for opening and closing the loading/unloading port; and a driving portion arranged horizontally laterally of the valve body for rotating the shaft.
  • gas components remaining on the substrates can be efficiently removed using a plurality of chambers.
  • FIG. 1 is a plan view showing a schematic configuration of a wafer processing apparatus according to an embodiment
  • FIG. FIG. 4 is a side view showing the outline of the configuration of the wafer cleaning module
  • FIG. 4 is a side view showing the outline of the configuration of the wafer cleaning module
  • FIG. 4 is a plan view showing the outline of the configuration of the wafer cleaning module
  • It is a perspective view showing an outline of composition of a chamber and a door mechanism.
  • It is a perspective view which shows the outline of a structure of a door mechanism.
  • It is a perspective view which shows the outline of a structure of a door mechanism.
  • FIG. 1 is a plan view showing a schematic configuration of a wafer processing apparatus according to an embodiment
  • FIG. FIG. 4 is a side view showing the outline of the configuration of the wafer cleaning module
  • FIG. 4 is a side view showing the outline of the configuration of the wafer cleaning module
  • FIG. 4 is a plan view showing the outline of the configuration of the wafer cleaning module
  • FIG. 4 is a perspective view showing the outline of the configuration of the valve body of the door mechanism; It is explanatory drawing which shows a mode that a valve body rotates. It is a side view showing an outline of composition of a chamber concerning other embodiments, and a door mechanism. It is a side view showing an outline of composition of a chamber concerning other embodiments, and a door mechanism.
  • FIG. 3 is an explanatory diagram showing the outline of the configuration of an air supply system and an exhaust system of a wafer cleaning module;
  • FIG. 5 is an explanatory diagram showing the operation of the wafer cleaning module in the wafer cleaning process;
  • a process of etching and removing an oxide film formed on the surface of a semiconductor wafer (hereinafter sometimes referred to as "wafer") is performed.
  • the oxide film etching process is performed by COR (Chemical Oxide Removal) processing and PHT (Post Heat Treatment) processing.
  • a processing gas is supplied to the surface of the oxide film, the oxide film and the processing gas are chemically reacted, and the oxide film is altered to generate a reaction product.
  • hydrogen fluoride gas and ammonia gas are used as the processing gas, and ammonium fluorosilicate (AFS) is produced as a reaction product.
  • AFS ammonium fluorosilicate
  • the AFS on the wafer is heated to a sublimation temperature or higher to vaporize (sublimate) the wafer in the process chamber.
  • fluorine may remain on the wafer surface after the COR and PHT treatments.
  • the residual fluorine corrodes wiring films and the like formed on the surface of the wafer, possibly deteriorating electrical characteristics of semiconductor devices manufactured from the wafer. Therefore, it is necessary to remove fluorine remaining on the surface of the wafer.
  • fluorine is removed by exposing the wafer to an atmosphere containing moisture. Specifically, after the wafer is loaded into the processing chamber, water vapor is supplied from the water supply mechanism to the processing chamber, and the surface of the wafer in the processing chamber is exposed to an atmosphere adjusted to a desired humidity. After that, when a desired time has passed, the wafer is unloaded from the processing chamber.
  • a plurality of vertically stacked chambers are used in a wafer cleaning module.
  • the chambers themselves have vertically narrow design structures and it is imperative to minimize the pitch between the chambers.
  • the gate valve provided at the wafer loading/unloading port has a configuration in which a drive mechanism for driving the valve body, such as an air actuator, is arranged below the valve body.
  • the drive mechanism raises and lowers the valve body, and the valve body is pressed against a sealing surface formed with a wafer loading/unloading port.
  • the conventional gate valve requires a large space in the vertical direction, and the pitch between the chambers cannot be kept small. Therefore, there is room for improvement in conventional wafer cleaning processes.
  • FIG. 1 is a plan view showing the outline of the configuration of the wafer processing apparatus according to this embodiment.
  • the wafer processing apparatus 1 includes various processing modules for performing COR processing, PHT processing, cleaning processing, and orientation processing on a wafer W as a substrate. Note that the module configuration of the wafer processing apparatus 1 of the present disclosure is not limited to this, and may be arbitrarily selected.
  • the wafer processing apparatus 1 has a configuration in which an atmosphere section 10 and a decompression section 11 are integrally connected via load lock modules 20a and 20b.
  • the atmospheric part 10 includes a plurality of atmospheric modules that perform desired processing on the wafer W under atmospheric pressure.
  • the decompression unit 11 includes a plurality of decompression modules that perform desired processing on the wafer W in a decompressed atmosphere.
  • the load lock module 20a temporarily holds the wafer W in order to deliver the wafer W transferred from the loader module 30 of the atmosphere section 10, which will be described later, to the transfer module 60 of the decompression section 11, which will be described later.
  • the load lock module 20a has an upper stocker 21a and a lower stocker 22a that hold two wafers W in the vertical direction.
  • the load lock module 20a is connected to a loader module 30, which will be described later, via a gate 24a provided with a gate valve 23a.
  • This gate valve 23a ensures airtightness and communication between the load lock module 20a and the loader module 30 at the same time.
  • the load lock module 20a is connected to a transfer module 60, which will be described later, via a gate 26a provided with a gate valve 25a.
  • the gate valve 25a ensures airtightness and communication between the load lock module 20a and the transfer module 60 at the same time.
  • An air supply unit (not shown) for supplying gas and an exhaust unit (not shown) for discharging gas are connected to the load lock module 20a.
  • the load lock module 20a is configured to be switchable to That is, the load lock module 20a is configured so that the wafer W can be transferred appropriately between the atmosphere section 10 having an atmospheric pressure atmosphere and the decompression section 11 having a decompression atmosphere.
  • the load lock module 20b has the same configuration as the load lock module 20a. That is, the load lock module 20b has an upper stocker 21b and a lower stocker 22b, a gate valve 23b and a gate 24b on the loader module 30 side, and a gate valve 25b and a gate 26b on the transfer module 60 side.
  • load lock modules 20a and 20b are not limited to this embodiment, and can be set arbitrarily.
  • the atmospheric part 10 includes a loader module 30 having a wafer transfer mechanism 40 to be described later, a load port 32 for mounting a FOUP 31 capable of storing a plurality of wafers W, and a wafer cleaning module 33 for removing fluorine from the wafers W. , and an orienter module 34 for adjusting the horizontal orientation of the wafer W.
  • a loader module 30 having a wafer transfer mechanism 40 to be described later
  • a load port 32 for mounting a FOUP 31 capable of storing a plurality of wafers W
  • a wafer cleaning module 33 for removing fluorine from the wafers W.
  • an orienter module 34 for adjusting the horizontal orientation of the wafer W.
  • the loader module 30 as a transfer device for the wafer W has a rectangular housing inside, and the inside of the housing is maintained in an atmospheric pressure atmosphere.
  • a plurality of, for example, three load ports 32 are arranged side by side on one side surface that constitutes the long side of the housing of the loader module 30 .
  • Load-lock modules 20 a and 20 b are arranged side by side on the other side surface that constitutes the long side of the housing of the loader module 30 .
  • a wafer cleaning module 33 is provided on one side of the housing of the loader module 30 that constitutes the short side.
  • An orienter module 34 is provided on the other side surface forming the short side of the housing of the loader module 30 .
  • the number and arrangement of the load ports 32, wafer cleaning modules 33, and orienter modules 34 are not limited to the present embodiment, and can be arbitrarily designed.
  • a plurality of wafer cleaning modules 33 may be provided on both sides of the load lock modules 20a and 20b.
  • the FOUP 31 accommodates a plurality of wafers W, for example 25 wafers per lot, stacked at equal intervals in multiple stages. Further, the inside of the FOUP 31 placed on the load port 32 is filled with air, nitrogen gas, or the like, for example, and sealed.
  • the wafer cleaning module 33 cleans the surface of the wafer W by removing fluorine remaining on the surface of the wafer W after COR processing and PHT processing. A specific configuration of the wafer cleaning module 33 will be described later.
  • the orienter module 34 rotates the wafer W to adjust its orientation in the horizontal direction. Specifically, when performing wafer processing on each of a plurality of wafers W, the orientor module 34 is adjusted so that the horizontal direction from the reference position (for example, the notch position) is the same for each wafer processing. be.
  • a wafer transfer mechanism 40 for transferring the wafer W is provided inside the loader module 30 .
  • the wafer transfer mechanism 40 has transfer arms 41a and 41b that hold and move the wafer W, a turntable 42 that rotatably supports the transfer arms 41a and 41b, and a turntable 43 on which the turntable 42 is mounted. are doing.
  • the wafer transfer mechanism 40 is configured to be movable in the longitudinal direction inside the housing of the loader module 30 .
  • the decompression unit 11 has a transfer module 60 for simultaneously transferring two wafers W, a COR module 61 for performing COR processing on the wafers W transferred from the transfer module 60, and a PHT module 62 for performing PHT processing.
  • the insides of the transfer module 60, the COR module 61, and the PHT module 62 are each maintained in a reduced pressure atmosphere.
  • a plurality of COR modules 61 and PHT modules 62 are provided for each transfer module 60, for example, three each.
  • the transfer module 60 has a rectangular housing inside, and is connected to the load lock modules 20a and 20b via the gate valves 25a and 25b as described above.
  • the transfer module 60 has a rectangular housing inside, and sequentially transfers the wafer W loaded into the load lock module 20a to one COR module 61 and one PHT module 62 for COR processing and PHT processing. It is carried out to the atmospheric part 10 via the load lock module 20b.
  • the COR module 61 performs COR processing on two wafers W at the same time by placing the wafers W side by side on stages 63a and 63b.
  • the COR module 61 is connected to an air supply unit (not shown) for supplying processing gas, purge gas, etc., and an exhaust unit (not shown) for discharging gas.
  • the COR module 61 is connected to the transfer module 60 via a gate 65 provided with a gate valve 64 .
  • This gate valve 64 ensures both airtightness and communication between the transfer module 60 and the COR module 61 .
  • the PHT module 62 performs PHT processing on two wafers W at the same time by placing the wafers W side by side on stages 66a and 66b.
  • the PHT module 62 is connected to an air supply section (not shown) for supplying gas and an exhaust section (not shown) for discharging gas.
  • the PHT module 62 is connected to the transfer module 60 via a gate 68 provided with a gate valve 67 .
  • This gate valve 67 ensures both airtightness and communication between the transfer module 60 and the PHT module 62 .
  • a wafer transfer mechanism 70 for transferring the wafer W is provided inside the transfer module 60 .
  • the wafer transfer mechanism 70 includes transfer arms 71a and 71b that hold and move two wafers W, a turntable 72 that rotatably supports the transfer arms 71a and 71b, and a turntable 73 on which the turntable 72 is mounted. and
  • a guide rail 74 extending in the longitudinal direction of the transfer module 60 is provided inside the transfer module 60 .
  • the rotating table 73 is provided on a guide rail 74 so that the wafer transfer mechanism 70 can move along the guide rail 74 .
  • the transfer module 60 the two wafers W held by the upper stocker 21 a and the lower stocker 22 a in the load lock module 20 a are received by the transfer arm 71 a and transferred to the COR module 61 . Also, the two wafers W subjected to the COR process are held by the transfer arm 71 a and transferred to the PHT module 62 . Furthermore, the two wafers W subjected to the PHT process are held by the transfer arm 71b and unloaded to the load lock module 20b.
  • a controller 80 is provided in the wafer processing apparatus 1 described above.
  • the control unit 80 is, for example, a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown).
  • a program for controlling the processing of the wafer W in the wafer processing apparatus 1 is stored in the program storage unit.
  • the program may be recorded in a computer-readable storage medium H and installed in the control unit 80 from the storage medium H. Further, the storage medium H may be temporary or non-temporary.
  • the wafer processing apparatus 1 is configured as described above. Next, wafer processing in the wafer processing apparatus 1 will be described.
  • the FOUP 31 housing a plurality of wafers W is placed on the load port 32 .
  • An oxide film is formed on the surface of the wafer.
  • two wafers W are taken out from the FOUP 31 by the wafer transfer mechanism 40 and transferred to the orienter module 34 .
  • the orientation of the wafer W in the horizontal direction from the reference position (for example, the notch position) is adjusted (orientation process).
  • the wafer transfer mechanism 40 loads two wafers W into the load lock module 20a.
  • the gate valve 23a is closed to seal the inside of the load lock module 20a and reduce the pressure.
  • the gate valve 25a is opened, and the inside of the load lock module 20a and the inside of the transfer module 60 are communicated.
  • the two wafers W are held by the transfer arm 71a of the wafer transfer mechanism 70 and transferred from the load lock module 20a to the transfer module 60. Subsequently, the wafer transfer mechanism 70 moves to the front of one COR module 61 .
  • the gate valve 64 is opened, and the transfer arm 71 a holding the two wafers W enters the COR module 61 . Then, one wafer W is placed on each of the stages 63a and 63b from the transfer arm 71a. After that, the transfer arm 71 a is withdrawn from the COR module 61 .
  • the gate valve 64 is closed, and the two wafers W are subjected to COR processing in the COR module 61 . Then, the oxide film changes in quality, and AFS, which is a reaction product, is generated.
  • the gate valve 64 is opened and the transfer arm 71a enters the COR module 61.
  • Two wafers W are transferred from the stages 63a and 63b to the transfer arm 71a, and the two wafers W are held by the transfer arm 71a.
  • the transfer arm 71a is withdrawn from the COR module 61, and the gate valve 64 is closed.
  • the wafer transfer mechanism 70 moves to the front of the PHT module 62 .
  • the gate valve 67 is opened, and the transfer arm 71a holding the two wafers W enters the PHT module 62.
  • one wafer W is placed on each of the stages 66a and 66b from the transfer arm 71a.
  • the transfer arm 71 a is withdrawn from the PHT module 62 .
  • the gate valve 67 is closed and the two wafers W are subjected to PHT processing. Then, the AFS on the wafer W sublimates.
  • the gate valve 67 is opened and the transfer arm 71b enters the PHT module 62.
  • Two wafers W are transferred from the stages 66a and 66b to the transfer arm 71b, and the two wafers W are held by the transfer arm 71b.
  • the transfer arm 71b is withdrawn from the PHT module 62, and the gate valve 67 is closed.
  • the gate valve 25b is opened, and the two wafers W are carried into the load lock module 20b by the wafer transfer mechanism 70.
  • the gate valve 25b is closed to seal the inside of the load lock module 20b and open it to the atmosphere.
  • the two wafers W are transferred to the wafer cleaning module 33 by the wafer transfer mechanism 40 .
  • the wafer cleaning module 33 fluorine remaining on the surface of the wafer W is removed and the surface of the wafer W is cleaned. The specific processing of this cleaning processing will be described later.
  • the wafer transfer mechanism 40 returns the two wafers W to the FOUP 31 and accommodates them. Thus, a series of wafer processing in the wafer processing apparatus 1 is completed.
  • FIG. 2 and 3 are side views showing the outline of the configuration of the wafer cleaning module 33.
  • FIG. 4 is a plan view showing the outline of the configuration of the wafer cleaning module 33. As shown in FIG.
  • the wafer cleaning module 33 has four chambers 100, four door mechanisms 101, a vaporizer 102, an air supply line group 103, an exhaust line group 104, an electrical equipment box 105, and a breaker 106.
  • a plurality of, for example, four chambers 100 are stacked in the vertical direction. Note that the number of chambers 100 is not limited to that of the present embodiment, and can be set arbitrarily.
  • the chamber 100 is arranged such that a loading/unloading port (not shown) for the wafer W faces the loader module 30 side on one side constituting the short side of the housing of the loader module 30 . ing.
  • Each chamber 100 accommodates two wafers W, for example. Inside the chamber 100, water vapor is supplied from the vaporizer 102 through the air supply line group 103, and the entire surface of the wafer W is exposed to the water vapor. Then, fluorine on the surface of the wafer W reacts with water vapor to remove the fluorine.
  • a known configuration disclosed in Japanese Patent Application Laid-Open No. 2021-086843 can be used.
  • the door mechanism 101 is provided at the loading/unloading port of the wafer W of the chamber 100 . That is, the number of door mechanisms 101 corresponds to the number of chambers 100, and four door mechanisms 101 are provided in this embodiment. Further, as shown in FIG. 1, the door mechanism 101 protrudes from the chamber 100 and is arranged inside the loader module 30 .
  • the vaporizer 102 is arranged below the four chambers 100 .
  • the vaporizer 102 vaporizes pure water to generate water vapor.
  • the air supply line group 103 is arranged on the rear side of the four chambers 100 (on the positive side of the Y axis).
  • the air supply line group 103 is connected to each of the four chambers 100 to supply the chambers 100 with process gas such as water vapor and nitrogen gas.
  • the air supply line group 103 includes a steam supply line supplied from the vaporizer 102, a nitrogen gas supply line supplied from a nitrogen gas supply source described later, and the like.
  • the exhaust line group 104 is arranged on the rear side of the four chambers 100 (on the positive side of the Y axis).
  • the exhaust line group 104 is connected to each of the four chambers 100 and exhausts water vapor, nitrogen gas, and the like discharged from the chambers 100 .
  • the electrical equipment box 105 is arranged above the four chambers 100 .
  • the electrical component box 105 accommodates electrical components used in each part of the wafer cleaning module 33 .
  • the breaker 106 is arranged below the four chambers 100 on the front side (X-axis negative direction side) of the vaporizer 102 .
  • FIG. 5 is a perspective view showing an outline of the configuration of the chamber 100 and the door mechanism 101.
  • FIG. 6 to 8 are perspective views showing an outline of the configuration of the door mechanism 101.
  • FIG. 9 is a perspective view showing the outline of the configuration of the valve body 120 of the door mechanism 101, which will be described later.
  • the chamber 100 has a side surface 100a formed with a loading/unloading port for the wafer W and three other side surfaces 100b.
  • the door mechanism 101 is provided on the side surface 100a.
  • the door mechanism 101 has a housing 110, a valve body 120, a shaft 130, and a drive section 140.
  • the housing 110 has a substantially portal shape when viewed from the side.
  • the housing 110 has a side 110a opposite to the chamber 100 and a side 110b on the chamber 100 side.
  • Housing 110 is fixed to chamber 100 such that side 110b of housing 110 and side 100a of chamber 100 are in contact.
  • the housing 110 may be fixed by any method, such as screwing.
  • a side surface 110a of the housing 110 is formed with a recessed portion 111 capable of accommodating the valve body 120 and the shaft 130 therein.
  • the surface of the recessed portion 111 on the side of the valve body 120 constitutes a seal surface 112 that contacts the valve body 120 .
  • an opening 113 is formed penetrating from the sealing surface 112 to the side surface 110b.
  • the opening 113 has a shape that fits a loading/unloading port for the wafer W on the side surface 100 a of the chamber 100 .
  • a side surface 110 b of the housing 110 is provided with a seal member (second seal member) 114 that contacts the side surface 100 a of the chamber 100 .
  • the sealing member 114 is provided so as to surround the opening 113 and the loading/unloading port of the wafer W. As shown in FIG. A resin O-ring, for example, is used for the sealing member 114 .
  • the valve body 120 is provided in the recessed portion 111 of the housing 110 .
  • the valve body 120 has a body portion 121 and a support portion 122 .
  • the body portion 121 contacts the sealing surface 112 of the housing 110 .
  • a seal member (first seal member) 123 is provided on a side surface 120a of the valve body 120 (body portion 121) on the housing 110 side. Seal member 123 is provided to surround opening 113 of housing 110 .
  • a resin O-ring, for example, is used for the sealing member 123 .
  • the support portion 122 is provided so as to protrude from the main body portion 121 .
  • the support portion 122 is fixed to the shaft 130 so that the valve body 120 is attached to the shaft 130 .
  • the shaft 130 is provided below the valve body 120 in the recessed portion 111 of the housing 110 .
  • the shaft 130 has a shaft portion 131 and a projection portion 132 .
  • the shaft portion 131 extends horizontally and is arranged parallel to the side surface 120 a of the valve body 120 .
  • One end 131 a of the shaft portion 131 is pivotally supported by the housing 110 .
  • the other end 131 b of the shaft portion 131 passes through the housing 110 and is attached to the driving portion 140 .
  • the protrusion 132 is provided so as to protrude from the shaft 130 .
  • the projecting portion 132 supports the support portion 122 of the valve body 120 .
  • the drive unit 140 is arranged horizontally on the side of the valve body 120 .
  • the four drive units 140 arranged vertically are arranged on the same side (Y-axis positive direction side) with respect to the valve body 120 .
  • An electric actuator is provided inside the drive unit 140, and the electric actuator includes, for example, a motor, a gear, a speed reducer, and the like.
  • Drive unit 140 rotates shaft 130 .
  • the door mechanism 101 configured as described above opens and closes a loading/unloading port for the wafer W formed on the side surface 100 a of the chamber 100 . That is, the door mechanism 101 opens and closes the loading/unloading port only by rotating the shaft 130 and the valve body 120 by the drive unit 140 .
  • a seal member 123 seals between the side surface 120a and the seal surface 112 when the loading/unloading port is closed.
  • the lower sealing member 123 of the annular sealing members 123 first contacts the sealing surface 112, and then the upper sealing member 123 contacts the sealing surface 112. 123 contacts the sealing surface 112 . That is, the surface contact load on the seal member 123 is not uniform, and the load may be applied to the lower seal member 123 that contacts the seal surface 112 first. As a result, the lower seal member 123 is likely to wear out.
  • the electric actuator of the driving section 140 is used to rotate the shaft 130 and the valve body 120, and the electric actuator is suitable for motion control. By controlling the motor of the electric actuator, the load applied to the lower sealing member 123 can be reduced.
  • the drive unit 140 rotates the shaft 130 to separate the valve element 120 from the housing 110 as shown in FIG.
  • the opening/closing angle (rotating angle) ⁇ of the valve body 120 is 90 degrees or less.
  • the opening/closing angle ⁇ of the valve element 120 is set so that the wafer W can pass through the opening 113 and the loading/unloading port.
  • valve body 120 may be rotated upward with respect to the opening 113 when opening the loading/unloading port. However, in such a case, since the wafer W passes under the valve body 120 , particles from the valve body 120 may fall onto the wafer W. Therefore, it is preferable to rotate the valve body 120 downward of the opening 113 as in the present embodiment.
  • the drive unit 140 is arranged on the horizontal side of the valve body 120, the space in the vertical direction can be reduced, and the pitch between the chambers 100 can be kept small. be able to. Therefore, in the wafer cleaning module 33 , a plurality of chambers 100 can be stacked in the vertical direction, and fluorine can be efficiently removed from a plurality of wafers W using the plurality of chambers 100 .
  • the side surface 100a of the chamber 100 is provided with a heating section 150 that heats the valve body 120 of the door mechanism 101.
  • Heating unit 150 incorporates a heater.
  • the heating part 150 is provided on the upper surface side of the housing 110 so as to cover at least the upper surface of the valve body 120 .
  • water vapor is used to remove fluorine from the wafer W, so the valve element 120 is prone to condensation.
  • the heating unit 150 heats the valve body 120 .
  • the set temperature of the heating unit 150 is arbitrary, it is, for example, 80°C to 90°C.
  • the heating part 150 In order to heat the valve body 120, it is also conceivable to provide the heating part 150 in the valve body 120 itself. However, since the valve body 120 rotates, it is actually difficult to provide the heating portion 150 . Therefore, it is preferable to provide the heating unit 150 on the side surface 100a of the chamber 100 as in the present embodiment.
  • a heat insulating material 151 is embedded in the side surface 100 a of the chamber 100 .
  • a heat insulating material 151 is provided between the heating unit 150 and the housing 110 .
  • the inside of the loader module 30 is maintained in the atmosphere by the downflow, so heat is easily dissipated from the inside of the chamber 100 . Therefore, a heat insulating material 151 is provided to suppress the heat dissipation.
  • a heat insulating material (not shown) is also embedded in the three side surfaces 100b of the chamber 100.
  • the drive units 140 are arranged on the same side (Y-axis positive direction side) with respect to the valve body 120.
  • the drive units 140 may be alternately arranged in the Y-axis direction. That is, for two vertically adjacent door mechanisms 101, the position of the drive unit 140 with respect to the valve body 120 of the upper door mechanism 101 and the position of the drive unit 140 with respect to the valve body 120 of the lower door mechanism 101 are: Opposite in the Y-axis direction. In such a case, the pitch between chambers 100 can be made even smaller.
  • the plurality of chambers 100 are stacked vertically in the above embodiment, the plurality of chambers 100 may be arranged horizontally as shown in FIG. In such a case, two door mechanisms 101 are provided horizontally adjacent to each other.
  • the driving portion 140 is arranged on the one side of the horizontal direction (the positive direction of the Y axis) with respect to the valve body 120 .
  • the driving section 140 is arranged on the other side of the valve body 120 in the horizontal direction (Y-axis negative direction).
  • each chamber 100 accommodated and processed two wafers W, but the number of wafers W is not limited to this.
  • the chamber 100 may accommodate one wafer W, or three or more wafers W may be accommodated.
  • the size of the door mechanism 101 can be changed as appropriate.
  • the door mechanism 101 is provided in the chamber 100 of the wafer cleaning module 33 in the above embodiment, the installation target of the door mechanism 101 is not limited to this.
  • the gate valves 23a and 23b of the load lock modules 20a and 20b may be replaced with door mechanisms 101.
  • FIG. it is useful to use this door mechanism 101 when a plurality of load lock modules 20a and 20b are vertically stacked.
  • FIG. 13 is an explanatory diagram showing the outline of the configuration of the air supply system and the exhaust system of the wafer cleaning module 33.
  • two wafers W are accommodated and processed in one chamber 100 .
  • the vertically stacked four chambers 100 may be referred to as chambers 100A to 100D from the bottom side to the top side.
  • Air supply module 200 supplies water vapor and a second nitrogen gas to chambers 100A and 100B.
  • Air supply module 201 supplies water vapor and a second nitrogen gas to chambers 100C and 100D.
  • Air supply module 202 supplies a first nitrogen gas to chambers 100A-100D.
  • the air supply modules 200 and 201 constitute the water vapor supply section of the present disclosure, and the air supply modules 200-202 constitute the nitrogen gas supply section of the present disclosure.
  • Each of the air supply modules 200 , 201 has the vaporizer 102 described above that produces and supplies water vapor to the chamber 100 .
  • the vaporizer 102 is connected via a supply line 210 to a pure water supply source 211 that stores pure water therein.
  • a nitrogen gas supply source 213 that stores nitrogen gas is connected to the vaporizer 102 via a supply line 212 .
  • the vaporizer 102 vaporizes the pure water supplied from the pure water supply source 211 to generate water vapor.
  • the nitrogen gas supplied to the vaporizer 102 is used as a carrier gas when supplying water vapor to the chamber 100, for example.
  • a vent line 214 for exhausting the inside is connected to the vaporizer 102 .
  • a drain pan for discharging internal wastewater is provided at the bottom of the vaporizer 102, and a drain 215 is connected to the drain pan.
  • the chambers 100A, 100B and the vaporizer 102 of the air supply module 200 are connected by two steam supply lines 216.
  • the water vapor supply line 216 connecting the chambers 100A, 100B and the vaporizer 102 includes a collective line 216A connected to the vaporizer 102, a branch line 216B branched from the collective line 216A and connected to each of the chambers 100A, 100B, 216C.
  • the steam supply line 216 connecting the chambers 100C and 100D and the vaporizer 102 of the air supply module 201 includes a combined line 216D connected to the vaporizer 102 and branched from the combined line 216D to the chambers 100C and 100D. It has connected branch lines 216E, 216F. Valves 217A to 217F are provided in the collective line 216A, the branch lines 216B and 216C, the collective line 216D and the branch lines 216E and 216F, respectively.
  • the collective lines 216A and 216D are provided with vent lines 218A and 218B, respectively.
  • Each of the vent lines 218A, 218B is connected to a gas-liquid separation tank 252, which will be described later.
  • Valves 219A and 219B are provided in the vent lines 218A and 218B, respectively.
  • Each of the air supply modules 200, 201 has a second heating section 220 that heats the nitrogen gas to a second temperature, such as 120° C. to 300° C., more preferably 200° C. to 300° C., and a second heating section 220 that has the second temperature. 2 and a pressurized tank 221 for storing the nitrogen gas of No. 2 at a desired pressure.
  • the second heating section 220 and the pressure tank 221 are connected via a supply line 222 , and the second heating section 220 is provided upstream of the pressure tank 221 .
  • the second heating unit 220 and the pressurization tank 221 may be integrally configured.
  • the second heating unit 220 is not particularly limited as long as it heats the nitrogen gas to the second temperature, but for example, a sheathed heater or heat coil is used.
  • the second heating unit 220 is connected via a supply line 223 to a nitrogen gas supply source 224 that stores room temperature nitrogen gas therein.
  • the supply line 223 is provided with a flow meter 225 for adjusting the flow rate of nitrogen gas.
  • the pressurization tank 221 pressurizes and stores the second nitrogen gas, and maintains the temperature of the second nitrogen gas at the second temperature by a heating mechanism such as a heater (not shown).
  • the pressurized tank 221 of the air supply module 200 is connected via the water vapor supply line 216 to a second nitrogen gas supply line 226A for supplying the second nitrogen gas to the chambers 100A and 100B.
  • the pressurized tank 221 of the air supply module 201 is connected via the water vapor supply line 216 to a second nitrogen gas supply line 226B for supplying the second nitrogen gas to the chambers 100C and 100D.
  • Second nitrogen gas supply lines 226A, 226B are connected to collective lines 216A, 216D, respectively. Valves 227A and 227B are provided in the second nitrogen gas supply lines 226A and 226B, respectively.
  • the gas supply module 202 has a first heating unit 230 that heats nitrogen gas to a first temperature, for example, 50° C. to 100° C., and a tank 231 that stores the first nitrogen gas having the first temperature. are doing. That is, the first temperature of the nitrogen gas heated by the first heating section 230 is lower than the second temperature of the nitrogen gas heated by the second heating section 220 .
  • the first heating section 230 and the tank 231 are connected via a supply line 232 , and the first heating section 230 is provided upstream of the tank 231 .
  • the first heating unit 230 is not particularly limited as long as it heats the nitrogen gas to the first temperature, but for example, a sheathed heater or heat coil is used.
  • the first heating unit 230 is connected via a supply line 233 to a nitrogen gas supply source 234 in which room temperature nitrogen gas is stored.
  • the supply line 233 is provided with a flow meter 235 for adjusting the flow rate of nitrogen gas.
  • the tank 231 stores the first nitrogen gas and maintains the temperature of the first nitrogen gas at the first temperature by a heating mechanism such as a heater (not shown).
  • First nitrogen gas supply lines 236 A to 236 D for supplying first nitrogen gas to the chamber 100 are connected to the tank 231 via a water vapor supply line 216 .
  • the first nitrogen gas supply lines 236A-236D are connected to branch lines 216B, 216C, 216E and 216F, respectively.
  • Valves 237A to 237D are provided in the first nitrogen gas supply lines 236A to 236D, respectively.
  • the tank 231 supplies the first nitrogen gas equally to the branch lines 216B, 216C, 216E, and 216F so that there is no pressure difference.
  • the tank 231 functions as a first nitrogen gas buffer tank.
  • a first exhaust line 241 and a second exhaust line 242 are connected to each of the four chambers 100A to 100D.
  • a first exhaust line 241 exhausts the water vapor and the first nitrogen gas in each chamber 100A-100D.
  • the first exhaust line 241 branches into a first steam exhaust line 241A and a first nitrogen gas exhaust line 241B.
  • Valves 243A and 243B are provided in the first steam exhaust line 241A and the first nitrogen gas exhaust line 241B, respectively.
  • a second exhaust line 242 exhausts water vapor and a second nitrogen gas in each chamber 100A-100D.
  • the second exhaust line 242 branches into a second steam exhaust line 242A and a second nitrogen gas exhaust line 242B.
  • Valves 244A and 244B are provided in the second steam exhaust line 242A and the second nitrogen gas exhaust line 242B, respectively.
  • the first nitrogen gas exhaust line 241B and the second nitrogen gas exhaust line 242B are connected to the exhaust tank 250 respectively.
  • the first nitrogen gas and the second nitrogen gas discharged from the chambers 100A to 100D are respectively discharged to the exhaust tank 250 through the first nitrogen gas exhaust line 241B and the second nitrogen gas exhaust line 242B. collectively exhausted.
  • the first steam exhaust line 241A and the second steam exhaust line 242A are connected to the exhaust tank 250 via the pump 251 and the gas-liquid separation tank 252, respectively.
  • the water vapor discharged from each of the chambers 100A to 100D is sucked by the pump 251 and separated into gas and liquid in the gas-liquid separation tank 252, after which the gas is discharged to the exhaust tank 250.
  • FIG. 14A and 14B are explanatory diagrams showing the operation of the wafer cleaning module 33 in the cleaning process of the wafer W.
  • FIG. 17 cleaning processing in chambers 100A and 100B will be described, but cleaning processing in other chambers 100C and 100D is the same.
  • a first nitrogen gas supply step S1 Normal Hot N2 purge
  • a water vapor supply step S2 H2O purge
  • a second nitrogen gas supply step S3 High Hot N2 purge
  • a first A nitrogen gas supply step S4 Normal Hot N2 purge
  • Step S1 First nitrogen gas supply step S1 (Normal Hot N2 purge)
  • the valve 237A is opened, and the first nitrogen gas heated to a first temperature, eg, 50° C. to 100° C. by the first heating unit 230 is supplied to the chamber 100A.
  • the valve 243B is opened, and the gas (mainly the first nitrogen gas) inside the chamber 100A is exhausted through the first exhaust line 241 . That is, in the chamber 100A, the internal gas is discharged while the first nitrogen gas is supplied under atmospheric pressure.
  • the valve 219A is opened, and the gas inside the collecting line 216A is discharged from the vent line 218A.
  • the loading/unloading port of the chamber 100A is opened by the door mechanism 101, and two wafers W are loaded.
  • Each wafer W is adjusted to a desired temperature by the first nitrogen gas.
  • the desired temperature is a temperature at which fluorine can be removed from the wafer W, eg, 50.degree. C. to 80.degree.
  • Step S2 Water vapor supply step S2 (H 2 O purge)
  • the valves 217A and 217B are opened and the water vapor generated by the vaporizer 102 is supplied to the chamber 100A.
  • the valves 243A and 244A are opened, and the gas (mainly water vapor) inside the chamber 100A is exhausted through the second exhaust line 242 . That is, in the chamber 100A, vapor is supplied under atmospheric pressure, and gas inside is discharged.
  • this step S2 by exposing the surface of the wafer W to water vapor, the water vapor and fluorine react to remove the fluorine.
  • Step S3 the valve 227A is opened, and the second nitrogen gas heated to a second temperature, for example, 120° C. to 300° C., more preferably 200° C. to 300° C., is heated by the second heating unit 220 to the chamber. 100A supplied. Also, the valve 244B is opened and the gas (mainly the second nitrogen gas) inside the chamber 100A is exhausted through the second exhaust line 242 . That is, in the chamber 100A, the internal gas is discharged while the second nitrogen gas is supplied under atmospheric pressure. In addition, in this step S3, the valve 219A is opened, and the gas inside the collective line 216A is discharged from the vent line 218A.
  • a second temperature for example, 120° C. to 300° C., more preferably 200° C. to 300° C.
  • the high-temperature second nitrogen gas can dry the wafer W exposed to water vapor in the previous step S2.
  • water vapor remaining in a part of the collective line 216A of the water vapor supply line 216 and the branch line 216B is also removed, and further water vapor remaining in the second exhaust line 242 is removed. do.
  • Step S4 First nitrogen gas supply step S4 (Normal Hot N2 purge)
  • the valve 237A is opened, and the first nitrogen gas heated to a first temperature, eg, 50° C. to 100° C. by the first heating unit 230 is supplied to the chamber 100A.
  • the valve 243B is opened, and the gas (mainly the first nitrogen gas) inside the chamber 100A is exhausted through the first exhaust line 241 . That is, in the chamber 100A, the internal gas is discharged while the first nitrogen gas is supplied under atmospheric pressure.
  • the valve 219A is opened, and the gas inside the collecting line 216A is discharged from the vent line 218A.
  • the wafer W is adjusted to a desired temperature by such first nitrogen gas.
  • the desired temperature of the wafer W is the temperature at which the wafer transfer mechanism 40 can transfer the wafer W, for example, 80° C. or less.
  • the loading/unloading port of the chamber 100A is opened by the door mechanism 101, and the two wafers W are unloaded.
  • a first nitrogen gas supply step S1 Normal Hot N2 purge
  • a water vapor supply step S2 H2O purge
  • a second nitrogen gas supply step S3 High Hot N2 purge
  • the first nitrogen gas supply step S4 Normal Hot N 2 purge
  • the timing of performing each step S1 to S4 is different. This is because the vaporizer 102, the second heating section 220 and the pressure tank 221, and the first heating section 230 and the tank 231 are provided in common to the chambers 100A to 100D.
  • the steam supply step S2 of the chamber 100A is completed, the steam supply step S2 of the chamber 100B is started.
  • the fluorine on the surface of the wafer W can be removed by steam in the steam supply step S2.
  • Nitrogen gas is supplied to the chamber 100 in steps other than the water vapor supply step S2. Therefore, for example, when the wafer W is loaded/unloaded, that is, when the loading/unloading port is opened by the door mechanism 101, the atmospheric atmosphere (especially oxygen gas) of the loader module 30 can be prevented from flowing into the chamber 100. .
  • Wafer Cleaning Module 100 Chamber 101 Door Mechanism 120 Valve Body 130 Shaft 140 Actuator W Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un mécanisme de porte qui est disposé sur un orifice de chargement/déchargement de substrat formé dans une chambre d'un dispositif de traitement de substrat, le mécanisme de porte ayant : un corps de soupape qui ouvre/ferme l'orifice de chargement/déchargement ; un arbre s'étendant horizontalement et auquel le corps de soupape est fixé ; et une unité d'entraînement qui est disposée latéralement dans la direction horizontale du corps de soupape et fait tourner l'arbre. Le dispositif de traitement de substrat comprend : une pluralité de chambres qui sont empilées verticalement et qui ont formées sur une surface latérale de celui-ci, un orifice de chargement/déchargement de substrat ; et une pluralité de mécanismes de porte disposés sur l'orifice de chargement/déchargement de substrat formé dans les chambres. Les mécanismes de porte comprennent : un corps de soupape qui ouvre/ferme l'orifice de chargement/déchargement ; un arbre qui s'étend horizontalement et auquel le corps de soupape est fixé ; et une unité d'entraînement qui est disposée latéralement dans la direction horizontale du corps de soupape et fait tourner l'arbre.
PCT/JP2022/027005 2021-07-19 2022-07-07 Mécanisme de porte, dispositif de traitement de substrat et procédé de nettoyage de substrat WO2023002860A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011093711A (ja) * 2009-10-22 2011-05-12 Vat Holding Ag バルブカバーを有するフラップトランスファーバルブ
JP2013545067A (ja) * 2010-11-02 2013-12-19 シュヴァルツ，エーファ 多重デッキチャンバー型熱処理炉
JP2021021444A (ja) * 2019-07-29 2021-02-18 株式会社ブイテックス 真空バルブの加熱機構
JP2021086843A (ja) * 2019-11-25 2021-06-03 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011093711A (ja) * 2009-10-22 2011-05-12 Vat Holding Ag バルブカバーを有するフラップトランスファーバルブ
JP2013545067A (ja) * 2010-11-02 2013-12-19 シュヴァルツ，エーファ 多重デッキチャンバー型熱処理炉
JP2021021444A (ja) * 2019-07-29 2021-02-18 株式会社ブイテックス 真空バルブの加熱機構
JP2021086843A (ja) * 2019-11-25 2021-06-03 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法

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