WO2023001927A1 - Verfahren zum aufbringen eines elektrischen verbindungsmaterials oder flussmittels auf ein bauelement - Google Patents
Verfahren zum aufbringen eines elektrischen verbindungsmaterials oder flussmittels auf ein bauelement Download PDFInfo
- Publication number
- WO2023001927A1 WO2023001927A1 PCT/EP2022/070422 EP2022070422W WO2023001927A1 WO 2023001927 A1 WO2023001927 A1 WO 2023001927A1 EP 2022070422 W EP2022070422 W EP 2022070422W WO 2023001927 A1 WO2023001927 A1 WO 2023001927A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carrier
- electrical connection
- flux
- optoelectronic component
- electrical
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 120
- 230000004907 flux Effects 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 55
- 230000005693 optoelectronics Effects 0.000 claims abstract description 69
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 240000001973 Ficus microcarpa Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/38—Conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Definitions
- the present invention deals with a method for applying an electrical connecting material or flux to at least one electrical connection area of an optoelectronic component.
- an electrical connecting material can be applied to the electrical connection surfaces of the optoelectronic components, for example, in order to thereby apply the optoelectronic components to a receiver component or substrate and to connect them electrically. It may be necessary, for example, for a flux to be applied to the electrical connection surfaces of the optoelectronic components in addition to the electrical connection material in order to enable the best possible electrical contact between the electrical connection surfaces and the electrical connection material.
- electrical connection materials or fluxes are often applied to the electrical connection surface of the optoelectronic component by means of stencil printing or by means of jetting.
- a method according to the proposed principle for applying an electrical connection material, in particular a electrically conductive connecting material or flux on at least one electrical connection surface of an optoelectronic component comprises the steps:
- Carrier such that the electrical connection material or flux facing the at least one electrical connection pad and is spaced from this is arranged; and Pulsed irradiation of the first carrier with laser light in such a way that at least regions of the electrical connection material or flux are detached from the first carrier and fall onto the at least one electrical connection area of the optoelectronic component.
- the method according to the proposed principle can, for example, be similar to a laser-induced forward transfer method (English: laser-induced forward transfer, abbreviation: LIFT).
- a pulsed laser beam is used as the driving force to transfer material from a donor substrate to a receiver substrate.
- significantly finer or smaller structures and volumes of the electrical connection material or flux can be transferred using the method according to the proposed principle.
- the method can be used to achieve improved accuracy or precision, by means of which the electrical connecting material or flux is applied to the least one electrical connection surface of the optoelectronic component's.
- the shape and the volume of the electrical connecting material or flux to be transferred can, however, already be determined by the arrangement of the electrical connecting material or flux on the first carrier or by selective or area-wise irradiation of the first carrier with laser light.
- the electrical connection material includes at least one of the following materials: a sintered material; an electrically conductive adhesive; an anisotropically conductive adhesive; a solder; and a hybrid solder-glue system.
- the electrical connection material can be formed by a sintering paste, an electrically conductive adhesive, or by a soldering paste.
- the electrical connection material is characterized in particular by the fact that it has electrically conductive properties.
- the electrical connection material can be characterized in that it can be used to connect two components to one another. This can be done by heating and/or melting the electrical connection material and/or by exerting pressure on the electrical connection material or the components to be connected to one another with the electrical connection material.
- an electrically conductive adhesive includes silver particles and an adhesive matrix material in which the particles are disposed.
- the first carrier is designed to be essentially transparent for at least the laser light.
- substantially transparent can mean that at least light in the range of the wavelength of the laser light is not or only hardly absorbed or reflected by the material of the first carrier, but is transmitted through it without major losses.
- the first carrier can be formed by a glass carrier or glass wafer or a transparent film.
- the second carrier is formed by a wafer assembly or an artificial wafer.
- a wafer assembly is in particular an arrangement that has a large number of unhoused semiconductor chips. This can be a semiconductor wafer, for example, in particular an unsawn semiconductor wafer, which has a large number of individual semiconductor chips.
- the wafer assembly is a carrier on which a large number of unhoused but already isolated semiconductor chips is applied in order to enable further processing of the to enable the same. In this case one also speaks of an artificial wafer (artificial wafer or sorted sheet).
- the semiconductor chips are preferably fixed on the carrier, for example by being glued onto the carrier or encapsulated with a casting compound such as silicone.
- the semiconductor chips can be placed in receptacles in the carrier for fixing.
- the electrical connection material or flux dropped from the first carrier and onto the second carrier has a volume of 5 gm 3 to 10,000 gm 3 , in particular up to 100,000 gm 3 .
- the electrical connecting material or flux that has fallen onto the second carrier has structures of less than or equal to 100 gm, or less than or equal to 50 gm on the at least one electrical connection surface.
- the electrical connecting material or flux that has fallen onto the second carrier has structures with a width and/or length and/or height of less than or equal to 50 ⁇ m on the at least one electrical connection area.
- the electrical connecting material or flux that has fallen onto the second carrier can cover an area of up to 50 ⁇ 50 gm 2 or larger on the at least one electrical connection surface, and have a thickness or height of up to 30 gm.
- the optoelectronic component has two electrical connection surfaces that are at most 50 ⁇ m apart.
- a partial area of the electrical connection material or flux is applied to the electrical connection surfaces separately from one another, in particular electrically separately.
- the separate partial areas of the electrical connecting material or flux do not touch each other, but are arranged at a distance from one another in such a way that there is no risk of a short circuit between the partial areas during operation of the optoelectronic component.
- the electrical connection material or flux is arranged over a large area on the first carrier.
- the areas of the electrical connecting material or flux that are detached from the first carrier are selectively irradiated with laser light and thereby fall in the direction of the second carrier onto the at least one electrical connection pad of the optoelectronic component.
- the electrical connection material or flux it is also possible for the electrical connection material or flux to be arranged in a structured manner on the first carrier, and for the first carrier to be irradiated with laser light over a large area. The irradiated structured areas of the electrical connection material or flux are thereby detached from the first carrier and fall in the direction of the second carrier onto the at least one electrical connection area of the optoelectronic component.
- the electrical connection material or flux can be structured or arranged on the first carrier in such a way that the structures on the first carrier are coordinated with the areas of electrical connection surfaces on the second carrier, on which the electrical connection material or flux is to be arranged.
- a high level of accuracy or precision can be achieved, by means of which the electrical connection material or flux can be applied to at least one electrical connection surface of the optoelectronic component.
- the optoelectronic component includes at least one LED or at least one LED chip.
- the LED or the LED chip can in particular also be referred to as a micro-LED, also called a pLED, or as a pLED chip, in particular if it has edge lengths in a range from 100 ⁇ m to 10 ⁇ m.
- the LED or the LED chip can in particular also be referred to as a mini-LED or as a mini-LED chip, in particular if it has edge lengths in a range from 250 ⁇ m to 100 ⁇ m.
- the optoelectronic component is part of a wafer assembly with a multiplicity of optoelectronic components grown on a wafer.
- the optoelectronic components can be present on the wafer in the form of unhoused semiconductor chips.
- unpackaged means that the chip has no housing around its semiconductor layers around, such as a "chip die".
- unpackaged may mean that the chip is free of any organic material.
- the unpackaged device does not contain any organic compounds containing carbon in covalent bonding.
- the first carrier has at least one cavity in which the electrical connection material or flux is arranged.
- the first carrier can also have a multiplicity of cavities of the same or different type, in which the electrical connection material or flux is arranged.
- the shape and size of the cavity can in particular define a volume of the electrical connection material or flux which is to be transferred to the second carrier or to the electrical connection surfaces. Differently sized and differently shaped cavities allow, for example, differently sized and differently shaped volumes of the electrical connection material or flux to be transferred to different electrical connection surfaces.
- the at least one cavity is provided by etching or laser drilling.
- the first carrier can, for example, be prepared or processed in a processing step in such a way that it has at least one cavity at a previously defined position or a multiplicity of cavities at previously defined positions.
- the electrical connection material or flux is provided in the at least one cavity or in the plurality of cavities by means of squeegees.
- the electrical connection material or flux in the region of at least one cavity or over a large area on the applied first carrier, and stripped excess material that does not remain in the at least one cavity by means of a squeegee.
- the electrical connection material or flux is flush with a surface of the first carrier. This can be the case, for example, due to stripping off the excess material.
- a release layer is disposed between the first carrier and the electrical connection material or flux.
- This separating layer can be in the form of a sacrificial layer, for example, which is melted or evaporated by the laser light. This can make it possible, for example, for the electrical connection material or flux to become detached from the first carrier in an improved manner.
- the electrical connection material forms a redistribution or rewiring layer (or redistribution layer, abbreviation: RDL) on the at least one electrical connection surface.
- RDL redistribution layer
- a redistribution or rewiring layer is an additional metal layer on the at least one electrical connection surface of the optoelectronic component, which makes the electrical connection surface available at other points of the optoelectronic component in order to enable better access to the electrical connection surface if required.
- a redistribution or redistribution layer can also make it possible to bond the optoelectronic component from different points of the optoelectronic component. This simplifies the bonding of the optoelectronic component in some applications.
- Another example of using a redistribution or rewiring layer is the distribution ment of the electrical connection surfaces on the optoelectronic component.
- the thermal load on the optoelectronic component can be better distributed during assembly.
- the method further includes baking, sintering, and/or remelting the electrical connection material.
- a step takes place after the electrical connection material has been arranged on the at least one electrical connection area.
- electrical connection material is transferred to the at least one electrical connection pad in a stacked manner by means of the method.
- the first carrier can be laterally displaced relative to the electrical connection surface, and electrical connection material is again detached from the first carrier by means of pulsed laser light, so that this is attached to the already electrical connection material arranged on the electrical connection surface.
- This step can be repeated several times so that, for example, different heights of the electrical connection material can be achieved on different electrical connection surfaces.
- the method further includes the steps of: rotating the second carrier;
- the optoelectronic component or in the case of a plurality of optoelectronic components, the plurality or number of optoelectronic components can be detached from the second carrier using the same principle as previously described (LIFT method) and transferred to a third carrier.
- the second carrier is designed to be essentially transparent for at least the laser light.
- substantially transparent can mean that at least light in the range of the wavelength of the laser light is not or only hardly absorbed or reflected by the material of the second carrier, but is transmitted through it without major losses.
- the second carrier can be formed by a glass carrier or glass wafer or a transparent film.
- a release layer is arranged between the second carrier and the optoelectronic component.
- This separating layer can be in the form of a sacrificial layer, for example, which is melted or vaporized by the laser light. As a result, it may be possible, for example, for the optoelectronic component to become detached from the second carrier in an improved manner.
- FIG. 2 shows a further method for applying an electrical connecting material or flux to at least one electrical connection area of an optoelectronic component according to some aspects of the proposed principle
- FIG. 3 shows a step of a further method for applying an electrical connecting material or flux to at least one electrical connection area of an optoelectronic component according to some aspects of the proposed principle.
- FIG. 1 shows a method for applying an electrical connecting material 2 or flux to at least one electrical connection surface 3 of an optoelectronic component 4.
- a first carrier 5 is provided, on which the electrical connecting material 2 or flux is arranged.
- the electrical connecting material 2 or flux is arranged.
- it is an electrical connection material 2 , such as a soldering paste, a sintered material or an electrically conductive adhesive, which is arranged on the first carrier 5 .
- the first carrier 5 has cavities 7 that are filled with the electrical connection material 2 .
- the cavities 7 are trapezoidal, but any other shape and configuration of the cavities is also conceivable.
- the cavities 7 of the first carrier 5 are filled with the electrical connection material 2's in such a way that the electrical connection material 2 ends flat with a surface 5.1 of the first carrier 5.
- the cavities can be filled with the electrical connecting material 2, for example by means of a squeegee method.
- a second carrier 6 is provided, on which at least one optoelectronic component 4 is arranged.
- at least one optoelectronic component 4 is arranged.
- two optoelectronic components 4 are next to one another and spaced apart from one another on the second carrier 6 arranged.
- the optoelectronic components 4 each have electrical connection areas 3, by means of which the optoelectronic components 4 can be supplied with electrical energy in order to operate the optoelectronic components 4.
- the first carrier 5 is placed above the second carrier 6 in such a way that the electrical connection material 2 faces the electrical connection pads 3 and is arranged at a distance from them. There is thus an air gap between the electrical connection material 2 and the electrical connection surfaces 3 .
- the first carrier 5 is in particular placed above the second carrier in such a way that at least one cavity 7 filled with the electrical connection material 2 is arranged directly above an electrical connection area 3 .
- the first carrier 5 is structured in such a way or the first carrier 5 has a plurality of cavities 7 which are arranged in such a way that the electrical connection material 2 on the first carrier 5 is exactly above the electrical connection areas 3 of the optoelectronic components 4 is arranged.
- the first carrier 5 is irradiated with a pulsed laser beam or laser light L in such a way that at least regions of the electrical connecting material 2 are detached from the first carrier 5 and fall onto the underlying electrical connection surfaces 3 of the optoelectronic component 4 .
- exactly one area of the electrical connecting material 2 is detached from the first carrier 5 per light pulse and falls onto an underlying electrical connection surface 3 of the optoelectronic component 4.
- the first carrier 5 it is also possible for the first carrier 5 to have a large area with Laser light L is irradiated, so essentially all predefined areas of the electrical connection material 2 are detached from the first carrier 5 and fall in the direction of the second carrier 6 .
- Such a method can be carried out, for example, similar to a laser-induced bulk transfer method (LIFT).
- LIFT laser-induced bulk transfer method
- the method shown can be carried out in a vacuum chamber, for example.
- the electrical connecting material 2 detached from the first carrier 5 and fallen in the direction of the second carrier 6 strikes the electrical connection surfaces 3 of the optoelectronic components 4 and remains there or adheres to the electrical connection surfaces 3.
- Figure 2 shows another exemplary embodiment of a method for transferring an electrical connecting material 2 or flux to electrical connection surfaces 3 of an optoelectronic component 4.
- the electrical connecting material 2 is not in cavities of the first carrier 5, but arranged over a large area on a surface 5.1 of the first carrier 5.
- the electrical connection material can cover the surface 5.1 of the first carrier 5 completely.
- FIG. 1 shows a further step of a method for applying an electrical connecting material 2 or flux to at least one electrical connection surface 3 of an optoelectronic component 4.
- the second carrier 6 is rotated and placed above a third carrier 8 in such a way that the electrical connecting material 2 faces the third carrier 8 and is arranged at a distance from it.
- the second carrier 6 is then irradiated with a pulsed laser light L in such a way that one or more optoelectronic components 4 fall in the direction of the third carrier.
- the optoelectronic component 4 or in the case of several optoelectronic components, the meh eral or a number of optoelectronic components using the same principle as previously described (LIFT method) can be detached from the second carrier 6 and onto a third Carrier 8 are transmitted.
- the optoelectronic component or components 4 strike the third carrier with the electrical connecting material 2 and remain or adhere there.
- the third carrier can, for example, have electrical connection surfaces or contact pads onto which the optoelectronic components 4 fall.
- the optoelectronic component or components 4 can be electrically connected to the third carrier 8 by means of the electrical connecting material 2 .
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112022003668.0T DE112022003668A5 (de) | 2021-07-23 | 2022-07-20 | Verfahren zum aufbringen eines elektrischen verbindungsmaterials oder flussmittels auf ein bauelement |
CN202280051315.1A CN117716523A (zh) | 2021-07-23 | 2022-07-20 | 用于将电连接材料或焊剂施加到器件上的方法 |
US18/580,115 US20240332448A1 (en) | 2021-07-23 | 2022-07-20 | Method for applying an electrical connection material or flux material to a component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102021119155.6 | 2021-07-23 | ||
DE102021119155.6A DE102021119155A1 (de) | 2021-07-23 | 2021-07-23 | Verfahren zum aufbringen eines elektrischen verbindungsmaterials oder flussmittels auf ein bauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2023001927A1 true WO2023001927A1 (de) | 2023-01-26 |
Family
ID=82939984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2022/070422 WO2023001927A1 (de) | 2021-07-23 | 2022-07-20 | Verfahren zum aufbringen eines elektrischen verbindungsmaterials oder flussmittels auf ein bauelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US20240332448A1 (de) |
CN (1) | CN117716523A (de) |
DE (2) | DE102021119155A1 (de) |
WO (1) | WO2023001927A1 (de) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4038765A1 (de) * | 1990-12-05 | 1992-06-11 | Abb Patent Gmbh | Verfahren zum beschicken und benetzen eines substrates mit lot |
EP2731126A1 (de) * | 2012-11-09 | 2014-05-14 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Verfahren zum Binden von Chipfarbstoffen |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2471568B1 (es) | 2012-11-22 | 2015-08-21 | Abengoa Solar New Technologies S.A. | Procedimiento para la creación de contactos eléctricos y contactos así creados |
DE102014104230A1 (de) | 2014-03-26 | 2015-10-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauteil und Verfahren zur Herstellung eines strahlungsemittierenden Bauteils |
US10403537B2 (en) | 2017-03-10 | 2019-09-03 | Facebook Technologies, Llc | Inorganic light emitting diode (ILED) assembly via direct bonding |
DE102018126936A1 (de) | 2018-10-29 | 2020-04-30 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen |
DE102019126859A1 (de) | 2019-10-07 | 2021-04-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Anzeigevorrichtung und Anzeigeeinheit |
-
2021
- 2021-07-23 DE DE102021119155.6A patent/DE102021119155A1/de not_active Withdrawn
-
2022
- 2022-07-20 CN CN202280051315.1A patent/CN117716523A/zh active Pending
- 2022-07-20 US US18/580,115 patent/US20240332448A1/en active Pending
- 2022-07-20 DE DE112022003668.0T patent/DE112022003668A5/de active Pending
- 2022-07-20 WO PCT/EP2022/070422 patent/WO2023001927A1/de active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4038765A1 (de) * | 1990-12-05 | 1992-06-11 | Abb Patent Gmbh | Verfahren zum beschicken und benetzen eines substrates mit lot |
EP2731126A1 (de) * | 2012-11-09 | 2014-05-14 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Verfahren zum Binden von Chipfarbstoffen |
Also Published As
Publication number | Publication date |
---|---|
CN117716523A (zh) | 2024-03-15 |
US20240332448A1 (en) | 2024-10-03 |
DE112022003668A5 (de) | 2024-05-16 |
DE102021119155A1 (de) | 2023-01-26 |
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