WO2022267372A1 - 减少银刻蚀副产物团聚的方法 - Google Patents

减少银刻蚀副产物团聚的方法 Download PDF

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WO2022267372A1
WO2022267372A1 PCT/CN2021/136770 CN2021136770W WO2022267372A1 WO 2022267372 A1 WO2022267372 A1 WO 2022267372A1 CN 2021136770 W CN2021136770 W CN 2021136770W WO 2022267372 A1 WO2022267372 A1 WO 2022267372A1
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filter screen
filter
silver
etching
groups
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PCT/CN2021/136770
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English (en)
French (fr)
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郑枝源
杨宇新
李佳鹤
彭泰彦
许开东
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江苏鲁汶仪器有限公司
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Priority to KR1020237029286A priority Critical patent/KR20230137974A/ko
Priority to EP21946846.9A priority patent/EP4282507A1/en
Publication of WO2022267372A1 publication Critical patent/WO2022267372A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/0027—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with additional separating or treating functions
    • B01D46/0036—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with additional separating or treating functions by adsorption or absorption
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D36/00—Filter circuits or combinations of filters with other separating devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2239/00—Aspects relating to filtering material for liquid or gaseous fluids
    • B01D2239/04—Additives and treatments of the filtering material
    • B01D2239/0407—Additives and treatments of the filtering material comprising particulate additives, e.g. adsorbents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/10—Inorganic adsorbents
    • B01D2253/102—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/10—Inorganic adsorbents
    • B01D2253/104—Alumina
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/20—Organic adsorbents
    • B01D2253/204—Metal organic frameworks (MOF's)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/30—Physical properties of adsorbents
    • B01D2253/302—Dimensions
    • B01D2253/311—Porosity, e.g. pore volume
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Definitions

  • the present application relates to the technical field of silver etching, in particular to a method for reducing the aggregation of silver etching by-products.
  • Noble metal IBE benefits from the unique nanometer size after etching, and its reflection, scattering and resonance of light are different from other nanomaterials, among which the surface plasmon resonance characteristic is its most basic characteristic.
  • the current methods for preparing silver-etched nanomaterials can be divided into dry etching and wet etching.
  • wet etching are fast etching rate, high selectivity, and relatively simple equipment.
  • silver nanosheets are prepared at room temperature using silver NO3, sodium citrate, H2O2, and NaBH4 solutions.
  • Wet etching is usually isotropic, which causes the etchant chemistry to remove the substrate material under the mask material.
  • Wet etching also requires a lot of chemicals because the substrate material must be covered with etchant. Additionally, the etchant must be replaced consistently to maintain the same initial etch rate. This results in very high production costs associated with wet etching.
  • Ion beam etching is a kind of dry etching, which is a kind of equipment that uses a certain energy ion beam to bombard the surface of the material to cause sputtering on the surface of the material, thereby achieving the etching effect.
  • the etching process flow is as follows:
  • the gas Ar, O2 , etc. enters the discharge chamber of the quartz chamber ⁇ the high-frequency wave initiated by the RF coil ionizes Ar and O2 to generate plasma ⁇ the ions are gathered into a positively charged ion beam through the grid ⁇ the positively charged ion beam is emitted by the neutralizer The emitted electrons are neutralized to form an electrically neutral ion beam ⁇ the electrically neutral ion beam bombards the wafer on the stage, and the by-products are sucked away by the vacuum system
  • ion beam etching requires less material consumption, can etch materials from different directions, and has lower production costs.
  • the silver bombarded by the ion beam will form conductive polymers. These polymers may remain on the surface of the etched material, or may be sucked into the dry pump by the vacuum system, shortening the equipment. service life.
  • one solution in the industry is to add a filter to the vacuum tube of the vacuum system to block particles that may enter the dry pump and molecular pump.
  • the limitation of the method is that the size of the filter screen cannot be made small enough to block the particles smaller than the pore size of the filter screen.
  • Various exemplary embodiments of the present application provide a method for reducing the agglomeration of silver etching by-products, which can filter or absorb most of the silver by-products.
  • An embodiment of the present application provides a method for reducing the agglomeration of silver etching by-products, comprising the following steps:
  • Step 1 set at least one set of filter screen groups in the vacuum pipe connecting the dry pump and the IBE chamber, and the interval between adjacent filter screen groups of the at least one filter screen group is 50mm-500mm; each set of filter screen groups includes 1 - 3 layers of filters, the interval between adjacent filters is 0.5mm-5mm; and
  • Step 2 filling chemical adsorbent between the filter screens.
  • step 1 at least two filter groups are set.
  • the chemical adsorbent in the step 2, includes an active component and a carrier, wherein the active component includes mercapto compound 30wt%-80wt%, biochar 10wt%-30wt%, alkali One or more of the 10-30wt% metallic compounds.
  • the carrier in the step 2, includes 20wt%-30wt% of activated carbon, 5wt%-15wt% of molecular sieve, 40wt%-80wt% of alumina, wherein the loading of the active component is 10wt% %-50wt%.
  • the mercapto compound includes 3-mercaptopropyltrimethoxysilane, mercaptopropionic acid, mercaptoethylamine, glutathione, cellulose PWP-OX-TSC cross-linked based on mercapto-modified glutaraldehyde one or more of them.
  • the basic metal compound includes one or more of magnesium oxide, calcium oxide, and chromium oxide.
  • the chemical adsorbent is spherical, granular, columnar or strip-shaped.
  • the filter screen is made of stainless steel, quartz or ceramics.
  • the aperture size of the filter screen in each filter screen group decreases sequentially from the outer filter screen to the inner layer filter screen, the aperture size of the outermost filter screen is 2mm-5mm, and the innermost filter screen The aperture size of the filter mesh is 0.5mm-1.5mm.
  • the meshes of the adjacent filter screens are dislocated.
  • the silver by-products passed through the application are filtered through the filter screen, and the large particles are blocked. After the small particles pass through the filter screen, due to the increase in the loading capacity of the active component of the adsorbent, there will be a better absorption effect on the small particle silver. Silver particles generated during IBE etching can be completely removed.
  • FIG. 1 is a schematic diagram of the connection between an IBE chamber and a vacuum system according to an embodiment of the present application.
  • Fig. 2 is a schematic diagram of the filter screen structure of the embodiment in Fig. 1 .
  • Fig. 3 is a schematic diagram of the chemical adsorption of the PWP-OX-TSC embodiment in Fig. 1 .
  • Fig. 4 is a schematic diagram of the structure of the silver etching material.
  • reference numeral 1 indicates connection to an IBE chamber
  • reference numeral 2 indicates connection to a dry pump
  • reference numeral 3 indicates connection to a molecular pump.
  • a method for reducing the agglomeration of silver etching by-products includes the following steps.
  • Step 1 Set a and b two groups of filter screen groups in the vacuum tube connecting the dry pump and the IBE chamber, and the interval between adjacent filter screen groups is 50-500mm; each group of filter screen groups includes 1-3 layers of filter screens. The distance between adjacent filters is 0.5-5mm.
  • Step 2 filling chemical adsorbent between filter screens.
  • the chemical adsorbent includes an active component and a carrier
  • the active component includes mercapto compound 30wt%-80wt%, biochar 10wt%-30wt%, basic metal compound 10wt%-30wt%
  • the The carrier is composed of 20wt%-30wt% of activated carbon, 5wt%-15wt% of molecular sieve, 40wt%-80wt% of alumina, and the loading of active components is any one or a combination of 10wt%-50wt%.
  • the mercapto compound includes one or more of 3-mercaptopropyltrimethoxysilane, mercaptopropionic acid, mercaptoethylamine, glutathione, and cellulose PWP-OX-TSC cross-linked based on mercapto-modified glutaraldehyde. kind.
  • the basic metal compound includes one or more of magnesium oxide, calcium oxide, and chromium oxide.
  • the chemical adsorbent is spherical, granular, columnar or strip-shaped.
  • the aperture size of the filter screen in each filter screen group decreases successively from outside to inside, the outermost filter screen aperture size is 2mm-5mm, and the innermost filter screen aperture size is 0.5mm-5mm. 1.5mm.
  • the meshes of adjacent filter screens are dislocated.
  • Filter material is stainless steel, quartz or ceramics.
  • the purpose of the filter screen is to filter the by-products of large particles of silver agglomeration that are suctioned by the vacuum system.
  • the screen size can be adjusted by the actual size of the silver by-products from the etching process.
  • the by-products produced during the silver etching process can be effectively removed by the combination of physical filtration and chemical adsorption described in this patent. Taking PWP-OX-TSC as an example, the principle of chemical adsorption is shown in Figure 3.
  • the surface structure of the silver nanomaterial to be etched is shown in FIG. 4 .
  • the ion beam angle is 0°
  • the ion energy is 400V
  • the ion acceleration bias is 400V
  • the etching chamber pressure is 2mT
  • the gas flow rate is 100sccm
  • the gas is argon
  • the ion beam angle is -75°
  • the ion energy is 400V
  • the ion acceleration bias is 400V
  • the etching chamber pressure is 2mT
  • the gas flow rate is 100sccm
  • the gas is argon
  • the side wall of the silver is modified and straightened.
  • the by-product silver particles produced during the process will be pumped into the exhaust pipeline.
  • the specifications of the filter and chemical adsorbent in the exhaust pipeline are as follows:
  • the filter screen diameter is 40mm (equal to the inner diameter of the IBE exhaust pipeline).
  • the filter screen material is quartz, and each set of filter screens contains two layers of filter screens.
  • the interval between the two layers of filters is 2mm.
  • the pore diameter of the outer filter is 2mm, and the pore diameter of the inner filter is 0.5mm (the filter near the shaded part is the inner filter).
  • the pore area accounts for 50% of the overall filter area, and the two layers of filters are arranged in a misplaced manner.
  • composition of the chemical adsorbent active component 3-mercaptopropyltrimethoxysilane 50wt%, biochar 15wt%, calcium oxide 35wt%.
  • the carrier is composed of 40 wt% of activated carbon, 15 wt% of molecular sieve and 45 wt% of aluminum oxide, and the load of active components is 20%.
  • the external shape of the adsorbent includes a spherical shape with a diameter of 1 mm.
  • the silver by-products are filtered through the filter, the large particles are blocked, and the small particles are chemically adsorbed after passing through the filter, which can effectively reduce the silver etching by-products.
  • the ion beam angle is 0°
  • the ion energy is 400V
  • the ion acceleration bias is 400V
  • the etching chamber pressure is 2mT
  • the gas flow rate is 100sccm
  • the gas is argon
  • the ion beam angle is -75°
  • the ion energy is 400V
  • the ion acceleration bias is 400V
  • the etching chamber pressure is 2mT
  • the gas flow rate is 100sccm
  • the gas is argon
  • the side wall of the silver is modified and straightened.
  • the by-product silver particles produced during the process will be sucked into the exhaust pipeline.
  • the specifications of the filter and chemical adsorbent in the exhaust pipeline are as follows.
  • the filter screen diameter is 40mm (equal to the inner diameter of the IBE exhaust pipe).
  • the filter screen material is quartz, and each set of filter screens contains two layers of filter screens.
  • the distance between the two layers of filters is 2mm.
  • the pore diameter of the outer filter is 2mm, and the pore diameter of the inner filter is 0.5mm (the filter near the shaded part is the inner filter).
  • the pore area accounts for 50% of the overall filter area, and the two layers of filters are arranged in a misplaced manner.
  • composition of the chemical adsorbent active component 3-mercaptopropyltrimethoxysilane 50wt%, biochar 15wt%, calcium oxide 35wt%.
  • the carrier is composed of 40 wt% of activated carbon, 15 wt% of molecular sieve and 45 wt% of aluminum oxide, and the load of active components is 20%.
  • the external shape of the adsorbent includes a spherical shape with a diameter of 1 mm.
  • the silver by-products are filtered through the filter screen, and the large particles are blocked. After the small particles pass through the filter screen, the adsorption is not complete due to insufficient filling of the adsorbent. A small amount of small particles will be drawn into the pump.
  • the ion beam angle is 0°
  • the ion energy is 400V
  • the ion acceleration bias is 400V
  • the etching chamber pressure is 2mT
  • the gas flow rate is 100sccm
  • the gas is argon
  • the ion beam angle is -75°
  • the ion energy is 400V
  • the ion acceleration bias is 400V
  • the etching chamber pressure is 2mT
  • the gas flow rate is 100sccm
  • the gas is argon
  • the side wall of the silver is modified and straightened.
  • the by-product silver particles produced during the process will be sucked into the exhaust pipeline.
  • the specifications of the filter and chemical adsorbent in the exhaust pipeline are as follows.
  • the filter screen diameter is 40mm (equal to the inner diameter of the IBE exhaust pipeline).
  • the filter screen material is quartz, and each set of filter screens contains two layers of filter screens.
  • the distance between the two layers of filters is 2mm.
  • the pore diameter of the outer filter is 2mm, and the pore diameter of the inner filter is 0.5mm (the filter near the shaded part is the inner filter).
  • the pore area accounts for 50% of the overall filter area, and the two layers of filters are arranged in a misplaced manner.
  • composition of the chemical adsorbent active component 3-mercaptopropyltrimethoxysilane 50wt%, biochar 15wt%, calcium oxide 35wt%.
  • the carrier is composed of 40 wt% of activated carbon, 15 wt% of molecular sieve and 45 wt% of aluminum oxide, and the load of active components is 50%.
  • the external shape of the adsorbent includes a spherical shape with a diameter of 1 mm.
  • the silver by-products are filtered through the filter, and the large particles are blocked. After the small particles pass through the filter, due to the increase in the loading capacity of the active components of the adsorbent, there will be a better absorption effect on the small particles of silver. Silver particles generated during IBE etching can be completely removed.

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Abstract

本申请涉及一种减少银刻蚀副产物团聚的方法，包括如下步骤：步骤1，在连接干泵和IBE腔室的真空管中设置若干组过滤网组，相邻过滤网组之间间隔50-500mm；每组过滤网组包括1-3层过滤网，相邻过滤网之间间隔0.5-5mm；步骤2，在过滤网之间填充化学吸附剂。本申请能够过滤或者吸附大部分的银副产物。

Description

减少银刻蚀副产物团聚的方法
相关申请
本申请要求于2021年6月25日提交中国专利局、申请号为2021107097031、申请名称为“一种减少银刻蚀副产物团聚的方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及银刻蚀技术领域，尤其涉及一种减少银刻蚀副产物团聚的方法。
背景技术
贵金属IBE得益于刻蚀完成后独特的纳米尺寸，对光的反射、散射以及共振不同于其他的纳米材料，其中表面等离子体共振特性是其最基本的特性。
目前制备银刻蚀纳米材料的方法可以分为干法刻蚀与湿法刻蚀。湿法刻蚀的优点为刻蚀速率快、选择比高、需要设备较为简单，例如采用银NO3、柠檬酸钠、H2O2、NaBH4溶液在室温下制备银纳米片。但是湿法刻蚀缺点同样明显，湿法蚀刻通常是各向同性的，这导致蚀刻剂化学物质会去除掩膜材料下方的基板材料。湿法蚀刻还需要大量的化学物质，因为基底材料必须被蚀刻剂覆盖。此外，必须一致地替换蚀刻剂，以保持相同的初始蚀刻速率。这导致了与湿法刻蚀有关的生产成本非常高。
离子束刻蚀(IBE)是干法刻蚀的一种，是一种利用一定能量的离子束轰击材料表面，使材料表面发生溅射，从而实现刻蚀效果的设备。
刻蚀工艺流程如下：
气体Ar、O 2等进入石英腔放电室→RF线圈发起的高频波电离Ar、O 2产生等离子体→离子通过栅网聚集成带正电荷的离子束→带正电荷的离子束被中和器发射出的电子中和，形成电中性离子束→电中性离子束对载台上的晶圆进行轰击，副产物被真空系统抽走
离子束刻蚀与湿法刻蚀相比，需要消耗的材料更少，可以从不同方向上对材料进行刻蚀，生产成本更低。但是当离子束刻蚀工作时，被离子束轰击下来的银会形成导电的聚合体，这些聚合体有可能会残留在刻蚀材料表面，也有可能被真空系统抽走进入干泵中，缩短设备的使用寿命。
目前，为了解决刻蚀过程中出现的银聚合和副产物问题，业界的一种解决方案是在真空系统的真空管中加入过滤网，用以阻挡可能进入干泵与分子泵中的颗粒物，这种方法的局限性在于滤网的尺寸无法做到足够小，对于小于滤网孔道尺寸的颗粒物无法起到阻拦作用。
发明内容
本申请各示例性实施例提供了一种减少银刻蚀副产物团聚的方法，能够过滤或者吸附大部分的银副产物。
本申请一实施例提供了一种减少银刻蚀副产物团聚的方法，包括如下步骤：
步骤1，在连接干泵和IBE腔室的真空管中设置至少一组过滤网组，所述至少一组过滤网组的相邻过滤网组之间间隔50mm-500mm；每组过滤网组包括1-3层过滤网，相邻过滤网之间间隔为0.5mm-5mm；以及
步骤2，在所述过滤网之间填充化学吸附剂。
在一实施例中，所述步骤1中，设置所述过滤网组为至少2组。
在一实施例中，所述步骤2中，所述化学吸附剂包括活性组分和载体，其中，所述活性组分包括巯基化合物30wt％-80wt％、生物质炭10wt％-30wt％、碱性金属化合物10-30wt％中的一种或多种。
在一实施例中，所述步骤2中，所述载体包括活性炭20wt％-30wt％、分子筛5wt％-15wt％、氧化铝40wt％-80wt％，其中，所述活性组分的负载量为10wt％-50wt％。
在一实施例中，所述巯基化合物包括3-巯基丙基三甲氧基硅烷、巯基丙酸，巯基乙胺、谷胱甘肽、基于巯基修饰戊二醛交联的纤维素PWP-OX-TSC中的一种或者多种。
在一实施例中，所述碱性金属化合物包括氧化镁、氧化钙、氧化铬中的一种或者多种。
在一实施例中，所述化学吸附剂为球形、颗粒状、柱形或者条形。
在一实施例中，过滤网的材质为不锈钢、石英或者陶瓷。
在一实施例中，每个过滤网组中的所述过滤网的孔径尺寸由外层过滤网到内层过滤网依次减小，最外层过滤网的孔径尺寸为2mm-5mm，最内层过滤网孔径尺寸0.5mm-1.5mm。
在一实施例中，相邻过滤网的网孔错位分布。
本申请采用以上技术方案与现有技术相比，具有以下技术效果：
通过本申请的银副产物经过滤网过滤，大颗粒物被阻拦，小颗粒物通过滤网后，由于吸附剂活性组分负载量的提升，对于小颗粒银会有更好的吸收效果。IBE刻蚀过程中产生的银颗粒能够被完全除去。
附图说明
图1为本申请一实施例的IBE腔室与真空系统连接示意图。
图2为图1实施例的滤网结构示意图。
图3为图1实施例的PWP-OX-TSC化学吸附原理图。
图4为银刻蚀材料结构示意图。
图1中，附图标记1表示连接IBE腔室，附图标记2表示连接干泵，附图标记3表示连接分子泵。
具体实施方式
下面结合附图对本申请的技术方案做进一步的详细说明。
本申请的描述中，需要理解的是，术语“左侧”、“右侧”、“上部”、“下部”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，“第一”、“第二”等并不表示零部件的重要程度，因此不能理解为对本申请的限制。本实施例中采用的具体尺寸只是为了举例说明技术方案，并不限制本申请的保护范围。
如图1、2、3所示实施例，一种减少银刻蚀副产物团聚的方法，包括如下步骤。
步骤1，在连接干泵和IBE腔室的真空管中设置a，b两组过滤网组，相邻过滤网组之间间隔50-500mm；每组过滤网组包括1-3层过滤网，相邻过滤网之间间隔0.5-5mm。
步骤2，在过滤网之间填充化学吸附剂。
步骤2中，所述化学吸附剂包括活性组分和载体，所述活性组分包括巯基化合物30wt％-80wt％、生物质炭10wt％-30wt％、碱性金属化合物10wt％-30wt％，所述载体包括活性炭20wt％-30wt％、分子筛5wt％-15wt％、氧化铝40wt％-80wt％组成，活性组分的负载量为10wt％-50wt％中的任意一种或多种的组合。
所述巯基化合物包括3-巯基丙基三甲氧基硅烷、巯基丙酸，巯基乙胺、谷胱甘肽、基于巯基修饰戊二醛交联的纤维素PWP-OX-TSC中的一种或者数种。
所述碱性金属化合物包括氧化镁、氧化钙、氧化铬中的一种或者数种。
所述化学吸附剂为球形、颗粒状、柱形或者条形。
如图2所示，每个过滤网组中的所述过滤网的孔径尺寸由外到内依次减小，最外层滤网孔径尺寸为2mm-5mm，最内层滤网孔径尺寸0.5mm-1.5mm。相邻过滤网的网孔错位分布。过滤网材质为不锈钢、石英或者陶瓷。
滤网的目的是为了过滤由真空系统抽滤的大颗粒银团聚副产物。滤网尺寸可以通过刻蚀过程中银副产物的实际大小进行调整。通过本专利中描述的物理过滤与化学吸附相结合的方法，可以有效去除银刻蚀过程中产生的副产物。以PWP-OX-TSC为例，其化学吸附的原理如图3所示。
吸附发生后，硫脲基团中硫醇基互变异构峰消失，主要原因为PWP-OX-TSC中的含S基团在吸附过程中发生了作用，其中C-S基团的质子化作用使其结合能升高，S配体在 酸性条件下质子化，使带正电的PWP-OX-TSC和银发生静电作用，导致银以带正电的离子形式被吸附在PWP-OX-TSC表面。
以下提供基于本专利创新点改良的银刻蚀工艺实施例，便于更好地理解本申请：
以下列举三个实施实例需要刻蚀的银纳米材料表面结构，如图4所示。
实施例1：
需要刻蚀的银纳米材料表面结构如图4所示。
A离子束角度为0°，离子能量为400V，离子加速偏压为400V，刻蚀腔体压力为2mT，气体流量为100sccm，气体为氩气,刻蚀到SiO2层停止。
B离子束角度为-75°，离子能量为400V，离子加速偏压为400V，刻蚀腔体压力为2mT，气体流量为100sccm，气体为氩气,将银的侧壁修饰陡直。
工艺过程中产生的副产物银颗粒会被抽入抽气管路中，此时抽气管路中的滤网及化学吸附剂规格如下所示：
(1)a,b处各有一组滤网，两组滤网相距100mm滤网直径40mm(与IBE抽气管路内直径相等)，滤网材质为石英，每组滤网包含两层滤网，两层滤网之间间隔2mm。外层滤网孔径2mm,内层滤网孔径0.5mm(以靠近阴影部分滤网为内层滤网)，孔面积占整体滤网面积为50％，两层滤网呈错位排列。
(2)化学吸附剂组成：活性组分3-巯基丙基三甲氧基硅烷50wt％、生物质炭15wt％、氧化钙35wt％。载体由活性炭40wt％、分子筛15wt％、氧化铝45wt％组成，活性组分负载量为20％。
吸附剂外型包括为直径1mm的球形。
银副产物经过滤网过滤，大颗粒物被阻拦，小颗粒物通过滤网后被化学吸附，可以对银刻蚀副产物有很好的减少效果。
实施例2：
A离子束角度为0°，离子能量为400V，离子加速偏压为400V，刻蚀腔体压力为2mT，气体流量为100sccm，气体为氩气,刻蚀到SiO2层停止。
B离子束角度为-75°，离子能量为400V，离子加速偏压为400V，刻蚀腔体压力为2mT，气体流量为100sccm，气体为氩气,将银的侧壁修饰陡直。
工艺过程中产生的副产物银颗粒会被抽入抽气管路中，此时抽气管路中的滤网及化学吸附剂规格如下所示。
(1)a,b处各有一组滤网，两组滤网相距50mm滤网直径40mm(与IBE抽气管路内直径相等)，滤网材质为石英，每组滤网包含两层滤网，两层滤网之间间隔2mm。外层滤网孔径2mm,内层滤网孔径0.5mm(以靠近阴影部分滤网为内层滤网)，孔面积占整体滤网面积为50％， 两层滤网呈错位排列。
(2)化学吸附剂组成：活性组分3-巯基丙基三甲氧基硅烷50wt％、生物质炭15wt％、氧化钙35wt％。载体由活性炭40wt％、分子筛15wt％、氧化铝45wt％组成，活性组分负载量为20％。
吸附剂外型包括为直径1mm的球形。
银副产物经过滤网过滤，大颗粒物被阻拦，小颗粒物通过滤网后，由于吸附剂填充量不够，吸附不完全。会有少量小颗粒物抽入泵中。
实施例3：
A离子束角度为0°，离子能量为400V，离子加速偏压为400V，刻蚀腔体压力为2mT，气体流量为100sccm，气体为氩气,刻蚀到SiO2层停止。
B离子束角度为-75°，离子能量为400V，离子加速偏压为400V，刻蚀腔体压力为2mT，气体流量为100sccm，气体为氩气,将银的侧壁修饰陡直。
工艺过程中产生的副产物银颗粒会被抽入抽气管路中，此时抽气管路中的滤网及化学吸附剂规格如下所示。
(1)a,b处各有一组滤网，两组滤网相距100mm滤网直径40mm(与IBE抽气管路内直径相等)，滤网材质为石英，每组滤网包含两层滤网，两层滤网之间间隔2mm。外层滤网孔径2mm,内层滤网孔径0.5mm(以靠近阴影部分滤网为内层滤网)，孔面积占整体滤网面积为50％，两层滤网呈错位排列。
(2)化学吸附剂组成：活性组分3-巯基丙基三甲氧基硅烷50wt％、生物质炭15wt％、氧化钙35wt％。载体由活性炭40wt％、分子筛15wt％、氧化铝45wt％组成，活性组分负载量为50％。
吸附剂外型包括为直径1mm的球形。
银副产物经过滤网过滤，大颗粒物被阻拦，小颗粒物通过滤网后，由于吸附剂活性组分负载量的提升，对于小颗粒银会有更好的吸收效果。IBE刻蚀过程中产生的银颗粒能够被完全除去。
本技术领域技术人员可以理解的是，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)具有与本申请所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语应该被理解为具有与现有技术的上下文中的意义一致的意义，并且除非像这里一样定义，不会用理想化或过于正式的含义来解释。
以上实施例仅为说明本申请的技术思想，不能以此限定本申请的保护范围，凡是按照本申请提出的技术思想，在技术方案基础上所做的任何改动，均落入本申请保护范围之内。上面对本申请的实施方式作了详细说明，但是本申请并不限于上述实施方式，在本领域普通技术人员所具备的知识范围内，还可以再不脱离本申请宗旨的前提下做出各种变化。

Claims (10)

  1. 一种减少银刻蚀副产物团聚的方法，包括：
    步骤1，在连接干泵和IBE腔室的真空管中设置至少一组过滤网组，所述至少一组过滤网组的相邻过滤网组之间间隔为50mm-500mm；每组过滤网组包括1-3层过滤网，相邻过滤网之间间隔为0.5mm-5mm；以及
    步骤2，在所述过滤网之间填充化学吸附剂。
  2. 根据权利要求1所述的方法，其中，所述步骤1中，设置所述过滤网组为至少2组。
  3. 根据权利要求1所述的方法，其中，所述步骤2中，所述化学吸附剂包括活性组分和载体，其中，所述活性组分包括巯基化合物30wt％-80wt％、生物质炭10wt％-30wt％、碱性金属化合物10wt％-30wt％中的一种或多种。
  4. 根据权利要求3所述的方法，其中，所述步骤2中，所述载体包括活性炭20wt％-30wt％、分子筛5wt％-15wt％、氧化铝40wt％-80wt％，其中，所述活性组分的负载量为10wt％-50wt％。
  5. 根据权利要求3所述的方法，其中，所述巯基化合物包括3-巯基丙基三甲氧基硅烷、巯基丙酸，巯基乙胺、谷胱甘肽、基于巯基修饰戊二醛交联的纤维素PWP-OX-TSC中的一种或者多种。
  6. 根据权利要求3所述的方法，其中，所述碱性金属化合物包括氧化镁、氧化钙、氧化铬中的一种或者多种。
  7. 根据权利要求1所述的方法，其中，所述化学吸附剂为球形、颗粒状、柱形或者条形。
  8. 根据权利要求1所述的方法，其中，所述过滤网的材质为不锈钢、石英或者陶瓷。
  9. 根据权利要求1所述的方法，其中，所述过滤网组中的所述过滤网的孔径尺寸由外层过滤网到内层过滤网依次减小，最外层过滤网的孔径尺寸为2mm-5mm，最内层过滤网的孔径尺寸0.5mm-1.5mm。
  10. 根据权利要求1所述的方法，其中，所述相邻过滤网的网孔错位分布。
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