WO2022255833A1 - 박막 증착 방법 - Google Patents
박막 증착 방법 Download PDFInfo
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- WO2022255833A1 WO2022255833A1 PCT/KR2022/007898 KR2022007898W WO2022255833A1 WO 2022255833 A1 WO2022255833 A1 WO 2022255833A1 KR 2022007898 W KR2022007898 W KR 2022007898W WO 2022255833 A1 WO2022255833 A1 WO 2022255833A1
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- Prior art keywords
- gas
- supplying
- diffusion
- substrate
- source
- Prior art date
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- 238000007736 thin film deposition technique Methods 0.000 title claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 515
- 238000009792 diffusion process Methods 0.000 claims abstract description 177
- 239000000758 substrate Substances 0.000 claims abstract description 147
- 239000012495 reaction gas Substances 0.000 claims abstract description 115
- 238000000034 method Methods 0.000 claims abstract description 72
- 239000010409 thin film Substances 0.000 claims abstract description 58
- 238000000151 deposition Methods 0.000 claims description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 11
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000010926 purge Methods 0.000 description 22
- 239000010410 layer Substances 0.000 description 21
- 229910044991 metal oxide Inorganic materials 0.000 description 21
- 150000004706 metal oxides Chemical class 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 16
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/4554—Plasma being used non-continuously in between ALD reactions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
Definitions
- the present invention relates to a thin film deposition method, and more particularly, to a thin film deposition method for depositing a thin film on a substrate.
- Metal oxide thin films for example organic metal oxide thin films, have excellent characteristics of low power and high mobility, and are used as protective layers, transparent conductive layers, or semiconductor layers formed on substrates in semiconductor devices, display devices, or solar cells. .
- the metal oxide thin film is zinc (Zn) oxide doped with at least one of indium (In) and gallium (Ga), for example, indium zinc oxide (IZO), gallium zinc oxide (GZO), indium gallium zinc oxide (IGZO), and the like. , and such a metal oxide thin film has various characteristics depending on the composition ratio of indium (In), gallium (Ga), and zinc (Zn).
- a metal oxide thin film was deposited by an atomic layer deposition (ALD) process.
- the atomic layer deposition process includes supplying a source gas containing indium (In), gallium (Ga), and zinc (Zn), purging the source gas, supplying a reaction gas containing oxygen (O), and A metal oxide thin film is formed on the substrate by performing a process cycle including purging the reactive gas a plurality of times.
- the present invention provides a thin film deposition method capable of improving process speed.
- a thin film deposition method includes supplying source gas together with a first diffusion gas onto a substrate provided in a process space; and supplying a reaction gas together with a second diffusion gas onto the substrate so as to be continuous with the supplying of the source gas, wherein the first diffusion gas and the source gas, the second diffusion gas and the reaction gas are included. Gas is supplied onto the substrate through different paths.
- the first diffusion gas may be mixed with the source gas in a path for supplying the source gas
- the second diffusion gas may be mixed with the reaction gas in a path for supplying the reaction gas
- the supply amount of the first diffusion gas may be controlled differently from the supply amount of the second diffusion gas.
- the supply amount of the first diffusion gas may be controlled to be relatively smaller than the supply amount of the second diffusion gas.
- the second diffusion gas is supplied on the substrate together with the first diffusion gas and the source gas
- the first diffusion gas is supplied to the second diffusion gas. And it can be supplied on the substrate together with the reaction gas.
- Supply amounts of the first diffusion gas may be differently controlled in the step of supplying the source gas and the step of supplying the reaction gas.
- the supply amount of the first diffusion gas may be controlled to be relatively smaller than the supply amount of the first diffusion gas in the step of supplying the reaction gas.
- power may be applied to generate plasma in the process space.
- a process cycle including the step of supplying the source gas and the step of supplying the reaction gas may be performed a plurality of times.
- the first diffusion gas and the second diffusion gas may include an inert gas.
- the source gas may be a gas containing at least one of indium (In), gallium (Ga), and zinc (Zn), and the reaction gas may be a gas containing oxygen.
- a first diffusion gas and source gas are supplied through a first gas supply path formed in a gas dispensing unit, and a second gas supply path formed in the gas distributing unit.
- a first step of supplying a second diffusion gas; And a second step of supplying the first diffusion gas through the first gas supply path, and supplying the second diffusion gas and the reaction gas through the second gas supply path; including, The process cycle in which the second step continuously proceeds may be repeatedly performed.
- a process speed for depositing a thin film on a substrate can be improved.
- the process time can be minimized by omitting the step of purging the source gas and the step of purging the reaction gas in the existing atomic layer deposition process.
- FIG. 1 is a diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention
- FIG. 2 is a view schematically showing a thin film deposition method according to an embodiment of the present invention.
- FIG. 3 is a view for explaining a process cycle of a thin film deposition method according to an embodiment of the present invention.
- FIG. 4 is a view showing supply amounts of a first diffusion gas and a second diffusion gas according to an embodiment of the present invention.
- FIG. 5 is a view schematically showing the appearance of a thin film transistor manufactured according to an embodiment of the present invention.
- FIG. 1 is a diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention.
- a deposition apparatus is an apparatus for depositing a thin film, for example, a metal oxide thin film, on a substrate, and is provided in a chamber 10, the chamber 10, and A substrate support part 20 for supporting the substrate S provided in the chamber 10 is provided in the chamber 10 so as to face the substrate support part 20, and a process gas is directed toward the substrate support part 20. It includes a gas spraying unit 30 for spraying and an RF power supply 50 for applying power to generate plasma in the chamber 10 .
- the deposition apparatus provides a first gas supply unit 50 for supplying a source gas and a first diffusion gas to the gas dispensing unit 30 and a reactive gas and a second diffusion gas to the gas dispensing unit 30 . It may further include a second gas supply unit 60 for the supply pipe 40 for connecting the first gas supply unit 50 and the second gas supply unit 60 to the gas injection unit 30, respectively. ) may be further included. In addition, the supply amount of the source gas and the first diffusion gas provided from the first gas supply unit 50, the supply amount of the reaction gas and the second diffusion gas provided from the reaction gas supply unit 60, and the RF power supply 50 It may further include a control unit (not shown) for controlling.
- the gas dispensing unit 30 includes a first gas supply path for receiving a first gas, for example, a source gas and a first diffusion gas from the first gas providing unit 50 and supplying the first gas onto the substrate S; , A second gas supply path for receiving a second gas, for example, a reaction gas and a second diffusion gas, from the second gas supplier 60 and supplying the second gas to the substrate S is formed separately.
- a first gas for example, a source gas and a first diffusion gas from the first gas providing unit 50 and supplying the first gas onto the substrate S
- a second gas supply path for receiving a second gas, for example, a reaction gas and a second diffusion gas, from the second gas supplier 60 and supplying the second gas to the substrate S is formed separately.
- the chamber 10 prepares a predetermined process space and keeps it airtight.
- the chamber 10 includes a body 12 having a predetermined process space including a substantially circular or quadrangular flat surface and a sidewall portion extending upward from the flat surface, and a substantially circular or quadrangular body 12 positioned on the chamber ( 10) may include a cover 14 to keep it airtight.
- the chamber 10 is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate.
- An exhaust port may be formed in a predetermined area of the lower surface of the chamber 10 , and an exhaust pipe (not shown) connected to the exhaust port may be provided outside the chamber 10 .
- the exhaust pipe may be connected to an exhaust device (not shown).
- a vacuum pump such as a turbo molecular pump may be used. Therefore, the inside of the chamber 10 can be vacuumed up to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less by the exhaust device.
- the exhaust pipe may be installed not only on the lower surface of the chamber 10 but also on the side surface of the chamber 10 under the substrate support 20 to be described later.
- a plurality of exhaust pipes and corresponding exhaust devices may be further installed to reduce the exhausting time.
- a substrate S provided into the chamber 10 may be seated on the substrate support 20 for a thin film forming process.
- a transparent substrate may be used as the substrate S, and, for example, a silicon substrate, a glass substrate, or a plastic substrate may be used when implementing a flexible display.
- a reflective substrate may be used as the substrate S, and in this case, a metal substrate may be used.
- the metal substrate may be formed of stainless steel (SUS), titanium (Ti), molybdenum (Mo), or an alloy thereof. Meanwhile, when a metal substrate is used as the substrate S, it is preferable to form an insulating film on the metal substrate.
- the substrate support 20 may be provided with, for example, an electrostatic chuck so that such a substrate may be seated and supported, and may adsorb and hold the substrate by electrostatic force, or may support the substrate by vacuum adsorption or mechanical force.
- the substrate support 20 may have a shape corresponding to the shape of the substrate S, for example, a circular shape or a rectangular shape.
- the substrate support 20 may include a substrate support 22 on which the substrate S is seated and an elevator 24 disposed below the substrate support 22 to move the substrate support 22 up and down.
- the substrate support 22 may be manufactured to be larger than the substrate S, and the elevator 24 is provided to support at least one region of the substrate support 22, for example, the center, and is placed on the substrate support 22.
- a heater (not shown) may be installed inside the substrate support 22 . The heater generates heat to a predetermined temperature to heat the substrate support 22 and the substrate S seated on the substrate support 22 so that a thin film is uniformly deposited on the substrate S.
- the supply pipe 40 may be installed to pass through the cover 14 of the chamber 10, and interconnect the gas dispensing unit 30, the first gas supply unit 50, and the second gas supply unit 60. It can be extended to form.
- the supply pipe 40 is a first supply pipe 42 connecting a space between the upper surface of the upper frame 32 and the cover 14 to be described later and the first gas supply unit 50, and a lower frame to be described later. It may include a second supply pipe 44 connecting a space between the upper surface of the 34 and the lower surface of the upper frame 32 and the second gas supply unit 60 .
- the first gas supply unit 50 provides source gas together with the first diffusion gas to the gas dispensing unit 30 through the first supply pipe 42 .
- the first gas providing unit 50 may include a source gas providing unit 52 for providing a source gas and a first diffusion gas providing unit 54 for providing a first diffusion gas.
- the source gas supply unit 52 may be connected to one end of the first supply pipe 42, and the first diffusion gas supply unit 54 connects the gas dispensing unit 30 and the source gas supply unit 52. It can be connected on the extension path of the first supply pipe 42 to be.
- the source gas may include a source gas for forming a metal oxide thin film, and may be, for example, a gas containing at least one of indium (In), gallium (Ga), and zinc (Zn).
- the first diffusion gas may include an inert gas for diffusing the source gas, and may include, for example, argon (Ar) or nitrogen (N 2 ) gas.
- the raw material gas supply unit 52 is provided as one, but the raw material gas supply unit 52 does not necessarily provide one gas, and a gas containing indium (In), gallium It may be configured to provide a gas containing (Ga) and a gas containing zinc (Zn), respectively, or a gas selected from a plurality of gases.
- the second gas supply unit 60 supplies the reaction gas together with the second diffusion gas to the gas dispensing unit 30 through the second supply pipe 44 .
- the second gas providing unit 60 may include a reactive gas providing unit 62 for providing a reactive gas and a second diffusion gas providing unit 64 for providing a second diffusion gas.
- the reactive gas providing unit 62 may be connected to one end of the second supply pipe 44, and the second diffusion gas providing unit 64 connects the gas dispensing unit 30 and the reactive gas providing unit 62. It can be connected on the extension path of the second supply pipe 44 to.
- the reaction gas may include a reaction gas for forming a metal oxide thin film, and may be, for example, a gas containing oxygen (O).
- the second diffusion gas may include an inert gas for diffusing the reaction gas, and may include, for example, argon (Ar) or nitrogen (N 2 ) gas.
- the gas dispensing unit 30 is installed inside the chamber 10, for example, on the lower surface of the cover 14, and inside the gas dispensing unit 30, the source gas and the first diffusion gas are applied onto the substrate S.
- a first gas supply path for spraying and supplying, and a second gas supplying path for spraying and supplying the reaction gas and the second diffusion gas onto the substrate S are formed.
- the first gas supply path and the second gas supply path are formed to be independent and separated from each other, so that the first gas and the second gas are separated so as not to be mixed in the gas dispensing unit 30 and are formed on the substrate (S). can supply
- the gas injection unit 30 may include an upper frame 32 and a lower frame 34 .
- the upper frame 32 is detachably attached to the lower surface of the cover 14 and at the same time, a part of the upper surface, for example, the center of the upper surface is spaced apart from the lower surface of the cover 14 by a predetermined distance. Accordingly, the source gas and the first diffusion gas supplied from the first gas supplier 50 may diffuse in the space between the upper surface of the upper frame 32 and the lower surface of the lid 14 .
- the lower frame 34 is installed at a predetermined interval on the lower surface of the upper frame 32 .
- reaction gas and the second diffusion gas supplied from the second gas supplier 60 may diffuse in a space between the upper surface of the lower frame 34 and the lower surface of the upper frame 32 .
- the upper frame 32 and the lower frame 34 may be integrally formed by being connected along the outer circumferential surface to form a separation space therein, or may be formed in a structure in which the outer circumferential surface is sealed by a separate sealing member. to be.
- the source gas and the first diffusion gas supplied from the first gas supply unit 50 are diffused in the space between the lower surface of the cover 14 and the upper frame 32, so that the upper frame 32 and the lower frame 34 may be formed to be supplied into the chamber 10 .
- the reaction gas and the second diffusion gas supplied from the second gas supplier 60 are diffused in a space between the lower surface of the upper frame 32 and the upper surface of the lower frame 34. It may be formed to pass through the lower frame 34 and be supplied into the chamber 10 .
- the first gas supply path and the second gas supply path may not communicate with each other, whereby the source gas, the first diffusion gas, the reaction gas, and the second diffusion gas pass through the gas dispensing unit 30 to the chamber. (10) It can be supplied through different routes inside.
- a first electrode 38 may be installed on the lower surface of the lower frame 34, and the second electrode 36 is spaced apart at a predetermined interval from the lower side of the lower frame 24 and the outer side of the first electrode 28. can be installed.
- the lower frame 34 and the second electrode 36 may be formed by being connected along the outer circumferential surface, and the outer circumferential surface may be sealed by a separate sealing member.
- the source gas and the first diffusion gas can pass through the first electrode 38 and be sprayed onto the substrate, and the reaction gas and the first diffusion gas can be sprayed onto the substrate.
- the diffusion gas may be sprayed onto the substrate through the separation space between the first electrode 38 and the second electrode 36 .
- RF power from the RF power source 50 may be applied to either one of the lower frame 34 and the second electrode 36 .
- FIG. 1 a structure in which the lower frame 34 is grounded and RF power is applied to the second electrode 36 is shown as an example.
- the first electrode 38 installed on the lower surface of the lower frame 34 is also grounded. Therefore, when the RF power source 50 is applied to the second electrode 36, a first activation region, that is, a first plasma region is formed between the gas injection part 30 and the substrate support part 20, and the A second activation region, that is, a second plasma region may be formed between the first electrode 38 and the second electrode 36 .
- the reaction gas and the second diffusion gas are injected through the separation space between the first electrode 38 and the second electrode 36, the reaction gas is emitted from the first electrode corresponding to the inside of the gas dispensing unit 30. It is activated over the region between the electrode 38 and the second electrode 36, that is, from the second plasma region to the first plasma region. Therefore, in the deposition apparatus according to the embodiment of the present invention, the reactant gas may be activated inside the gas dispensing unit 30 and sprayed onto the substrate.
- the first gas supply path for supplying the source gas and the first diffusion gas and the second gas supply path for supplying the reaction gas and the second diffusion gas are formed separately, the source gas and the reaction gas are supplied to the gas ejection unit. (30), it is possible to spray the material gas and the reaction gas by distributing them through an optimal supply path for depositing a thin film.
- the thin film deposition method of the present invention will be described in detail with reference to FIGS. 2 and 3 .
- a description overlapping with that of the aforementioned deposition apparatus will be omitted.
- FIG. 2 is a diagram schematically showing a thin film deposition method according to an embodiment of the present invention.
- 3 is a diagram for explaining a process cycle of a thin film deposition method according to an embodiment of the present invention
- FIG. 4 is a diagram showing supply amounts of a first diffusion gas and a second diffusion gas according to an embodiment of the present invention. .
- the thin film deposition method includes supplying a source gas along with a first diffusion gas onto a substrate S provided in a process space ( S100 ) and the source gas.
- a step of supplying a reaction gas together with a second diffusion gas onto the substrate S (S200) is included to continue with the step of supplying the gas (S100).
- the first diffusion gas and source gas, and the second diffusion gas and reaction gas are supplied on the substrate S through different paths.
- the process cycle including the step of supplying the raw material gas ( S100 ) and the step of supplying the reaction gas ( S200 ) may be performed a plurality of times.
- the thin film deposition method omits the step of purging the source gas and the step of purging the reaction gas in the existing atomic layer deposition (ALD) process, thereby supplying the source gas.
- a process cycle consisting of step S100 and supplying reactive gas (S200) is performed multiple times to form a thin film having a desired thickness on the substrate S.
- the source gas is not uniformly adsorbed on the substrate (S), resulting in a problem of deterioration in deposition uniformity.
- the reactive gas reacts with the raw material gas remaining in the gas dispensing unit 30 while supplying the reactive gas, causing a problem of generating a large amount of particles in the gas dispensing unit 30 .
- the source gas is supplied to the substrate S along with the first diffusion gas for moving the source gas
- the reaction gas is supplied along with the second diffusion gas for moving the reaction gas to the substrate S.
- a thin film having the same level of quality as a thin film formed by an existing atomic layer deposition process can be formed by adsorbing the raw material gas and reacting by the reactive gas on (S).
- the gas dispensing unit 30 has a first gas supply path for supplying the source gas and the first diffusion gas onto the substrate S, and a reaction gas and the second diffusion gas to the substrate S.
- a second gas supply path for supplying to the phase is formed separately. Accordingly, the raw material gas and the reactive gas are separated from each other and do not react before being injected from the gas dispensing unit 30 .
- a source gas and a first diffusion gas that controls the movement of the source gas are supplied through the first gas supply path, and a reaction gas and a second diffusion gas that controls the movement of the reaction gas are supplied through the second gas supply path. Diffusion gas is supplied.
- the source gas is quickly discharged to the outside of the chamber 10 through the process space by the first diffusion gas, and in the step of supplying the reaction gas (S200), the reaction gas passes through the process space.
- the reaction gas passes through the process space.
- a step of preparing the substrate S may be performed before the step of supplying the source gas ( S100 ).
- the substrate S is transported into the chamber 10 of the aforementioned deposition apparatus and placed on the substrate support 20 .
- the substrate S may be a substrate for manufacturing a thin film transistor, and may include, for example, a silicon substrate, a glass substrate, or a plastic substrate.
- a thin film transistor manufactured using the substrate S prepared as described above will be described later with reference to FIG. 5 .
- the source gas is supplied together with the first diffusion gas onto the substrate S provided in the process space in the chamber 10 .
- the source gas is supplied from the source gas supply unit 52 of the above-described deposition apparatus and supplied onto the substrate S through the first gas supply path provided in the gas dispensing unit 30 .
- the first diffusion gas is provided from the first diffusion gas supply unit 54 and is supplied onto the substrate S through a first gas supply path provided in the gas dispensing unit 30 .
- the source gas supply unit 52 may be connected to one end of the first supply pipe 42, and the first diffusion gas supply unit 54 is separate from the source gas supply unit 52, and the gas dispensing unit 30 ) and the source gas supply unit 52 may be connected on an extension path of the first supply pipe 42 .
- the first diffusion gas may be mixed with the source gas in the first gas supply path and supplied onto the substrate S.
- the source gas may include a source gas for forming the metal oxide thin film.
- the source gas may be a gas containing at least one of indium (In), gallium (Ga), and zinc (Zn).
- the first diffusion gas may include an inert gas for diffusing the source gas, and may include, for example, argon (Ar) gas or nitrogen (N 2 ) gas.
- the source gas is not necessarily provided from one source gas supply unit 52, and a gas containing indium (In), a gas containing gallium (Ga), and a gas containing zinc (Zn) are provided, respectively.
- it may be configured to provide a selected gas among a plurality of gases as described above.
- the source gas is supplied to the substrate S along with the first diffusion gas to adsorb the source material included in the source gas onto the substrate S while controlling the movement of the source gas. let it At this time, supplying source gas (S100) may be performed without applying power.
- the step of supplying the reaction gas (S200) supplies the reaction gas together with the second diffusion gas onto the substrate S so as to be continuous with the step of supplying the source gas (S100). That is, after the step of supplying the source gas (S100), the step of purging the source gas is not performed, and the step of supplying the source gas (S100) and the step of continuously supplying the reaction gas (S200) are performed.
- the reaction gas is supplied together with the second diffusion gas onto the substrate S to which the source gas and the first diffusion gas are sprayed.
- the reaction gas is supplied from the reaction gas supplier 62 of the deposition apparatus and supplied onto the substrate S through the second gas supply path provided in the gas dispensing unit 30 .
- the second diffusion gas is provided from the second diffusion gas supply unit 64 and is supplied onto the substrate S through a second gas supply path provided in the gas dispensing unit 30 .
- the reactive gas providing unit 62 may be connected to one end of the second supply pipe 44, and the second diffusion gas providing unit 64 is separate from the reactive gas providing unit 62, and the gas dispensing unit 30 ) and the reaction gas supply unit 62 may be connected on an extension path of the second supply pipe 44 .
- the second diffusion gas may be mixed with the reaction gas in the second gas supply path and supplied onto the substrate S.
- the carrier is pre-mixed with the reaction gas and simply serves to transport the reaction gas.
- the second diffusion gas can not only control the movement of the reaction gas but also play a role of diffusing the reaction gas on the substrate S, as in the case of the first diffusion gas.
- the reactive gas may include a reactive gas for forming a metal oxide thin film by reacting with the raw material gas.
- the reactive gas may be a gas containing oxygen (O).
- the second diffusion gas may include an inert gas for diffusing the reaction gas, and may include, for example, argon (Ar) gas or nitrogen (N 2 ) gas.
- the RF power source 50 is applied to the process space to generate plasma by activating the reaction gas in order to effectively react the oxygen (O) component included in the reaction gas with the zinc (Zn) component. can be authorized.
- the oxygen-containing gas supplied by activating and supplying the reactive gas is activated with oxygen radicals to react with the zinc component, and a zinc oxide thin film is formed on the substrate at a lower process temperature. be able to form
- the supply amount of the first diffusion gas may be controlled differently from the supply amount of the second diffusion gas. That is, in depositing a thin film on the substrate (S), since the thickness of the thin film is determined according to the degree to which the source material is adsorbed to the substrate (S), the supply rate of the source gas supplied on the substrate (S) is In order to control the thickness, it needs to be controlled differently according to process conditions. Therefore, in the embodiment of the present invention, the supply amount of the first diffusion gas in the step of supplying the source gas (S100) may be controlled differently from the supply amount of the second diffusion gas in the step of supplying the reaction gas (S200).
- the supply amount of the first diffusion gas may be controlled to be relatively smaller than the supply amount of the second diffusion gas. That is, in the embodiment of the present invention, the supply amount of the first diffusion gas in the step of supplying the source gas (S100) may be controlled to be less than the supply amount of the second diffusion gas in the step of supplying the reaction gas (S200).
- the supply amount of the first diffusion gas may be controlled to M1.
- the supply amount of the second diffusion gas may be controlled to M2 greater than M1.
- the source gas in an atomic layer deposition process, after supplying a source gas, in a process of purging the source gas, the source gas is diffused and uniformly adsorbed onto the substrate (S).
- the process of purging the source gas is not performed after supplying the source gas, the source gas is not uniformly diffused on the substrate S, so that a large amount of source material is adsorbed in the center of the substrate S, A relatively small amount of source material is adsorbed at the edge of the substrate S, resulting in deterioration of deposition uniformity.
- the supply amount M1 of the first diffusion gas in the step of supplying the source gas (S100) is relatively higher than the supply amount (M2) of the second diffusion gas in the step of supplying the reaction gas (S200). less control
- the supply amount M1 of the first diffusion gas is relatively smaller than the supply amount M2 of the second diffusion gas in the step of supplying the reactive gas (S200)
- the source gas is relatively slow on the substrate S. It is diffused at a high speed, whereby the source gas is uniformly diffused to the edge of the substrate (S) so that the source material can be adsorbed to the substrate (S) with a uniform thickness.
- the reaction gas is for providing a reaction material for reacting with a raw material already adsorbed on the substrate (S), and a second diffusion gas to quickly provide a reaction material for reacting with the raw material on the substrate (S).
- the supply amount M2 of may be controlled to be greater than the supply amount M1 of the first diffusion gas in the step of supplying the source gas (S100).
- the second diffusion gas may be supplied on the substrate S together with the first diffusion gas and the source gas
- the second diffusion gas may be supplied. 1 diffusion gas may be supplied on the substrate S together with the second diffusion gas and the reaction gas.
- a first diffusion gas and source gas are supplied to the process space of the chamber 10 through a first gas supply path formed in the gas dispensing unit 30, and the gas A first step of supplying a second diffusion gas to the process space through a second gas supply path formed in the injection unit 30 and supplying the first diffusion gas to the process space through the first gas supply path; and a second step of supplying the second diffusion gas and the reaction gas to the process space through the second gas supply path.
- the first step and the second step are continuously performed to form one process cycle, and the process cycle in which the first step and the second step are continuously performed may be repeatedly performed.
- the first diffusion gas and the source gas are supplied onto the substrate S through the first gas supply path, and at the same time, the second diffusion gas is supplied to the second gas. It is supplied on the substrate (S) through the path.
- the reaction gas (S200) the second diffusion gas and the reaction gas are supplied onto the substrate S through the second gas supply path, and at the same time, the first diffusion gas is supplied to the substrate through the first gas supply path. (S) can be supplied.
- the first diffusion gas is supplied through the first gas supply path to prevent the reaction gas from flowing into the first gas supply path, It is possible to prevent particles from being generated as a result of a reaction between the source gas and the reaction gas in the first gas introduction path. That is, while the source gas and the second diffusion gas are supplied through the first gas supply passage, the source gas is prevented from flowing into the second gas supply passage by supplying the second diffusion gas through the second gas supply passage. 2 It is possible to prevent the generation of particles due to the reaction between the source gas and the reaction gas in the gas inflow path.
- the source gas remaining in the first gas supply path can be quickly discharged.
- the source gas supplied in the step of supplying the source gas (S100) is stopped in the step of supplying the reaction gas (S200), but the source gas already discharged in the step of supplying the source gas (S100) is the first It may remain in the gas supply path.
- the first diffusion gas is supplied through the first gas supply path while the reaction gas and the second diffusion gas are supplied through the second gas supply path, so that the first gas supply path or process It is possible to minimize the formation of impurities due to mutual reaction between the raw material gas and the reaction gas in the space. This may be equally applied to the case where the second diffusion gas is supplied through the second gas supply passage while the source gas and the first diffusion gas are supplied through the first gas supply passage.
- the first diffusion gas is continuously supplied onto the substrate S in the step of supplying the source gas (S100) and the step of supplying the reaction gas (S200).
- the supply amount of the first diffusion gas may be controlled differently from each other. That is, as described above, in the step of supplying the source gas (S100), the first diffusion gas may be supplied with a supply amount of M1 that is relatively smaller than the supply amount of M2, which is the supply amount of the second diffusion gas, which makes the source gas uniform on the substrate.
- the first diffusion gas is not for uniformly diffusing the source gas, but for preventing the reactive gas from flowing into the first gas supply path. Therefore, in the step of supplying the reaction gas (S200), the first diffusion gas may be supplied in an amount greater than that of M1, and for example, in the step of supplying the reaction gas (S200), the supply amount of M2, which is the supply amount of the second diffusion gas is controlled to be supplied to, it is possible to effectively block the reaction gas from flowing into the first gas supply path.
- the first diffusion gas is supplied in an amount of M1 and M2 in the step of supplying the source gas (S100) and the step of supplying the reaction gas (S200), and the second diffusion gas is supplied as the source gas (S200).
- S100) and the case of supplying the amount of M2 in the step of supplying the reaction gas (S200) has been described as an example.
- the supply amount of the first diffusion gas and the supply amount of the second diffusion gas can be controlled in various ways.
- the supply amount of the first diffusion gas may be controlled to be less than or greater than M2 within a range greater than M1 .
- the supply amount of the first diffusion gas and the supply amount of the second diffusion gas are not necessarily maintained constant at M1 or M2 in the step of supplying the source gas (S100) or the step of supplying the reaction gas (S200), Of course, it may be variously changed to increase or decrease according to process conditions.
- the process cycle including supplying source gas ( S100 ) and supplying reactive gas ( S200 ) may be performed multiple times until a thin film having a desired thickness is deposited. That is, the thin film deposition method according to an embodiment of the present invention does not perform the step of purging the reaction gas after the step of supplying the reaction gas (S200), but supplying the source gas (S100) and supplying the reaction gas. With step S200 as one process cycle, a thin film may be deposited by performing the process cycle a plurality of times.
- FIG. 5 is a diagram showing an example of a thin film transistor manufactured according to an embodiment of the present invention.
- a thin film transistor manufactured according to an embodiment of the present invention includes a gate electrode 100, a source electrode 400 disposed above or below the gate electrode 100 and spaced apart from each other in a horizontal direction, and A drain electrode 500, an active layer 300 disposed between the gate electrode 100, the source electrode 400 and the drain electrode 500, and an active layer disposed between the gate electrode 100 and the active layer 300
- a gate insulating layer 200 is included.
- the thin film transistor according to an embodiment of the present invention as shown in FIG. 5, the gate electrode 100 formed on the substrate (S), the gate insulating film 200 formed on the gate electrode 100, , Bottom gate type thin film transistor including an active layer 300 formed on the gate insulating film 200, and a source electrode 400 and a drain electrode 500 formed spaced apart from each other on the active layer 300
- the same may be applied to a top gate type thin film transistor on which the gate electrode 100 is disposed.
- a transparent substrate may be used as the substrate S, and, for example, a silicon substrate, a glass substrate, or a plastic substrate may be used when implementing a flexible display.
- a reflective substrate may be used as the substrate S, and in this case, a metal substrate may be used.
- the metal substrate may be formed of stainless steel (SUS), titanium (Ti), molybdenum (Mo), or an alloy thereof. Meanwhile, when a metal substrate is used as the substrate S, it is preferable to form an insulating film on the metal substrate.
- the gate electrode 100 may be formed using a conductive material, for example, aluminum (Al), neodymium (Nd), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo) and copper (Cu) can be formed of at least any one of metals or alloys containing them.
- the gate electrode 100 may be formed not only as a single layer but also as a multi-layered structure including a plurality of metal layers.
- metal layers such as chromium (Cr), titanium (Ti), tantalum (Ta), and molybdenum (Mo) with excellent physical and chemical properties and aluminum (Al), silver (Ag), or copper (Cu) series with low resistivity It can also be formed as a double layer including a metal layer of.
- the gate insulating film 200 is formed on at least the gate electrode 100 . That is, the gate insulating layer 200 may be formed on the substrate S including the top and side portions of the gate electrode 100 .
- the gate insulating film 200 is an inorganic insulating film including silicon oxide (SiO 2 ), silicon nitride (SiN), alumina (Al 2 O 3 ), and zirconia (ZrO 2 ), which have excellent adhesion to metal materials and have excellent dielectric strength. It may be formed using one or more insulating materials.
- the active layer 300 is formed between the gate insulating layer 200 and the source electrode 400 and the drain electrode 5000, and at least partially overlaps the gate electrode 100.
- the active layer 300 may be formed by including a metal oxide thin film.
- the metal oxide thin film includes supplying source gas together with the first diffusion gas on the substrate S provided in the process space. (S100) and supplying a reaction gas together with a second diffusion gas onto the substrate (S) (S200) to be continuous with the supplying of the source gas (S100). have.
- the process cycle including the step of supplying the source gas (S100) and the step of supplying the reaction gas (S200) is performed a plurality of times, the first diffusion gas and the source gas, the second diffusion gas and Supplying the reaction gas onto the substrate S through different paths is the same as that described in the thin film deposition method according to the embodiment of the present invention, and thus duplicate descriptions will be omitted.
- the active layer 300 may be formed of a single metal oxide thin film or a plurality of metal oxide thin films.
- the active layer 300 can adjust the electrical conductivity of the metal oxide thin film by controlling the type and content of metal elements contained in each metal oxide thin film. That is, indium (In) is a metal with a relatively low band gap and relatively high standard electrode potential, and has characteristics of improving mobility by lowering resistance and increasing electrical conductivity.
- indium (In) is a metal with a relatively low band gap and relatively high standard electrode potential, and has characteristics of improving mobility by lowering resistance and increasing electrical conductivity.
- gallium (Ga) is a metal with a relatively high band gap and relatively high standard electrode potential, and has characteristics of improving stability by increasing resistance and reducing electrical conductivity.
- the active layer may be formed by controlling the contents of indium (In) and gallium (Ga) included in a single metal oxide thin film or a plurality of metal oxide thin films, respectively.
- a metal oxide thin film includes an indium-zinc oxide (IZO; In-Zn-O) thin film, a gallium-zinc oxide (GZO; Ga-Zn-O) thin film, and an indium-gallium-zinc oxide (IGZO; In-Ga-Zn) thin film.
- -O It may include at least one thin film among thin films.
- the source electrode 400 and the drain electrode 500 are formed on the active layer 300 and partially overlap with the gate electrode 100 to form the source electrode 400 and the drain electrode 500 with the gate electrode 100 therebetween. These may be formed spaced apart from each other.
- the source electrode 400 and the drain electrode 500 may be formed by the same process using the same material, and may be formed using a conductive material, for example, aluminum (Al), neodymium (Nd), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta) and molybdenum (Mo) can be formed of at least one metal or an alloy containing these. That is, it may be formed of the same material as the gate electrode 100, but may be formed of a different material.
- the source electrode 400 and the drain electrode 500 may be formed of not only a single layer but also multiple layers of a plurality of metal layers.
- the process speed for depositing a thin film on a substrate can be improved.
- the process time can be minimized by omitting the step of purging the source gas and the step of purging the reaction gas in the existing atomic layer deposition process.
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Abstract
Description
Claims (12)
- 공정 공간에 마련된 기판 상에, 제1 확산 가스와 함께 원료 가스를 공급하는 단계; 및상기 원료 가스를 공급하는 단계와 연속되도록, 상기 기판 상에 제2 확산 가스와 함께 반응 가스를 공급하는 단계;를 포함하고,상기 제1 확산 가스 및 원료 가스와, 상기 제2 확산 가스 및 반응 가스를 서로 다른 경로로 상기 기판 상에 공급하는 박막 증착 방법.
- 청구항 1에 있어서,상기 제1 확산 가스는 상기 원료 가스를 공급하는 경로 내에서 상기 원료 가스와 혼합되고,상기 제2 확산 가스는 상기 반응 가스를 공급하는 경로 내에서 상기 반응 가스와 혼합되는 박막 증착 방법.
- 청구항 1에 있어서,상기 원료 가스를 공급하는 단계에서 상기 제1 확산 가스의 공급량을 상기 제2 확산 가스의 공급량과 다르게 제어하는 박막 증착 방법.
- 청구항 3에 있어서,상기 원료 가스를 공급하는 단계에서 상기 제1 확산 가스의 공급량을 상기 제2 확산 가스의 공급량보다 상대적으로 적게 제어하는 박막 증착 방법.
- 청구항 1에 있어서,상기 원료 가스를 공급하는 단계에서 상기 제2 확산 가스를 상기 제1 확산 가스 및 원료 가스와 함께 상기 기판 상에 공급하고,상기 반응 가스를 공급하는 단계에서 상기 제1 확산 가스를 상기 제2 확산 가스 및 반응 가스와 함께 상기 기판 상에 공급하는 박막 증착 방법.
- 청구항 5에 있어서,상기 원료 가스를 공급하는 단계 및 상기 반응 가스를 공급하는 단계에서 상기 제1 확산 가스의 공급량을 서로 다르게 제어하는 박막 증착 방법.
- 청구항 6에 있어서,상기 원료 가스를 공급하는 단계에서 상기 제1 확산 가스의 공급량을 상기 반응 가스를 공급하는 단계에서의 상기 제1 확산 가스의 공급량보다 상대적으로 적게 제어하는 박막 증착 방법.
- 청구항 1에 있어서,상기 반응 가스를 공급하는 단계에서 상기 공정 공간에 플라즈마를 발생시키도록 전원을 인가하는 박막 증착 방법.
- 청구항 1에 있어서,상기 원료 가스를 공급하는 단계 및 상기 반응 가스를 공급하는 단계를 포함하는 공정 사이클은 복수 회로 수행되는 박막 증착 방법.
- 청구항 1에 있어서,상기 제1 확산 가스 및 제2 확산 가스는 불활성 가스를 포함하는 박막 증착 방법.
- 청구항 1에 있어서,상기 원료 가스는 인듐(In), 갈륨(Ga) 및 아연(Zn) 중 적어도 하나를 함유하는 가스이고,상기 반응 가스는 산소를 함유하는 가스인 박막 증착 방법.
- 가스 분사부에 형성된 제1 가스 공급 경로를 통하여 제1 확산 가스 및 원료 가스를 공급하고, 상기 가스 분사부에 형성된 제2 가스 공급 경로를 통하여 제2 확산 가스를 공급하는 제1 단계; 및상기 제1 가스 공급 경로를 통하여 상기 제1 확산 가스를 공급하고, 상기 제2 가스 공급 경로를 통하여 상기 제2 확산 가스 및 반응 가스를 공급하는 제2 단계;를 포함하고,상기 제1 단계와 제2 단계가 연속적으로 진행되는 공정 사이클은 반복적으로 수행되는 박막 증착 방법.
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JP2001234348A (ja) * | 2000-02-28 | 2001-08-31 | Horiba Ltd | 薄膜堆積方法とその装置および薄膜堆積方法に用いるftirガス分析計並びに薄膜堆積方法に用いる混合ガス供給装置 |
KR20150133670A (ko) * | 2015-09-09 | 2015-11-30 | 주식회사 유진테크 | 기판 처리장치 및 기판 처리방법 |
KR20170099904A (ko) * | 2014-12-22 | 2017-09-01 | 피코순 오와이 | Ald 방법 및 장치 |
KR20190098533A (ko) * | 2018-02-14 | 2019-08-22 | 엘지디스플레이 주식회사 | 산화물 박막의 제조 장치와 제조 방법 및 그 산화물 박막을 포함하는 디스플레이 장치 |
US20200365386A1 (en) * | 2019-05-15 | 2020-11-19 | Applied Materials, Inc. | Dynamic multi zone flow control for a processing system |
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KR100996644B1 (ko) | 2008-03-17 | 2010-11-25 | 한국전자통신연구원 | ZnO TFT의 제조방법 |
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JP2001234348A (ja) * | 2000-02-28 | 2001-08-31 | Horiba Ltd | 薄膜堆積方法とその装置および薄膜堆積方法に用いるftirガス分析計並びに薄膜堆積方法に用いる混合ガス供給装置 |
KR20170099904A (ko) * | 2014-12-22 | 2017-09-01 | 피코순 오와이 | Ald 방법 및 장치 |
KR20150133670A (ko) * | 2015-09-09 | 2015-11-30 | 주식회사 유진테크 | 기판 처리장치 및 기판 처리방법 |
KR20190098533A (ko) * | 2018-02-14 | 2019-08-22 | 엘지디스플레이 주식회사 | 산화물 박막의 제조 장치와 제조 방법 및 그 산화물 박막을 포함하는 디스플레이 장치 |
US20200365386A1 (en) * | 2019-05-15 | 2020-11-19 | Applied Materials, Inc. | Dynamic multi zone flow control for a processing system |
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