WO2022247570A1 - Cellule solaire à hétérojonction et son procédé de préparation - Google Patents

Cellule solaire à hétérojonction et son procédé de préparation Download PDF

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WO2022247570A1
WO2022247570A1 PCT/CN2022/089454 CN2022089454W WO2022247570A1 WO 2022247570 A1 WO2022247570 A1 WO 2022247570A1 CN 2022089454 W CN2022089454 W CN 2022089454W WO 2022247570 A1 WO2022247570 A1 WO 2022247570A1
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tco
layer
film
doping concentration
silicon substrate
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PCT/CN2022/089454
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Chinese (zh)
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张海川
袁强
石建华
孟凡英
刘正新
程琼
周华
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中威新能源(成都)有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of heterojunction solar cells, in particular, to a heterojunction solar cell and a preparation method thereof.
  • solar energy is a kind of energy with huge reserves, clean and pollution-free, and has broad application prospects.
  • the use of solar energy is mainly to use solar cells to convert it for electrical energy.
  • crystalline silicon solar cells occupy more than 90% of the market, and crystalline silicon solar cells are mainly PERC (Passivated Emitter and Rear Cell, passivated emitter and rear passivated) cells, but the efficiency of PERC cells is already at a low level. In the bottleneck period, it is too difficult to improve efficiency.
  • PERC Passivated Emitter and Rear Cell, passivated emitter and rear passivated
  • heterojunction solar cells have the advantages of symmetrical structure, high open circuit voltage, good temperature characteristics, thin silicon wafers, and low-temperature manufacturing processes. They are entering the stage of industrialization and becoming one of the industry's target products.
  • heterojunction solar cells The general preparation process of heterojunction solar cells is to use N-type crystalline silicon as the substrate, and form a "pyramid" light-trapping structure by cleaning and texturing, and then deposit intrinsic amorphous silicon passivation layers, A p-type doped layer, an intrinsic amorphous silicon passivation layer, and an n-type doped layer are deposited on both sides of a transparent conductive oxide (TCO, Transparent Conductive Oxide) film, and finally a silver electrode is prepared.
  • TCO Transparent Conductive Oxide
  • the embodiment of the present application provides a heterojunction solar cell and a preparation method thereof, which can effectively improve the reliability of the heterojunction solar cell and slow down the aging attenuation of the heterojunction solar cell while ensuring the cost and efficiency of the cell.
  • a heterojunction solar cell which may include a silicon substrate, and the front side of the silicon substrate is sequentially stacked with a front passivation layer, an n-type doped layer, a front TCO layer and a front electrode,
  • the back side of the silicon substrate is successively provided with a back passivation layer, a p-type doped layer, a back TCO layer and a back electrode, and the front TCO layer and/or the back TCO layer include at least two layers of TCO films, of which some layers of TCO films It is a low-doped TCO film with a doping concentration of 0wt% to 5wt%, and some layers of the TCO film are high-doped TCO films with a doping concentration of 8wt% to 15wt%.
  • At least one of the transparent conductive oxide (TCO) films on the front and back of the heterojunction solar cell adopts a stacked structure in which a highly doped TCO film and a low doped TCO film are combined, which can improve
  • the reliability and photoelectric conversion efficiency of heterojunction solar cells slow down the aging and attenuation of heterojunction solar cells, so that heterojunction solar cells take into account the cost, efficiency and reliability of heterojunction solar cells.
  • the thickness of the low-doped TCO film may be 10 nm to 80 nm; the thickness of the highly doped TCO film may be 20 nm to 80 nm.
  • the low-doped TCO films and the highly-doped TCO films in the front TCO layer and/or the back TCO layer may be respectively arranged sequentially or alternately according to gradually changing doping concentrations.
  • the front TCO layer may include at least two layers of TCO thin films, and the doping concentration of each layer of TCO thin films decreases sequentially from the direction close to the silicon substrate to the direction away from the silicon substrate;
  • the front TCO layer includes an even number of TCO films, and all TCO films are grouped in pairs from adjacent to far away from the silicon substrate, and the doping concentration of the TCO films adjacent to the silicon substrate in each group is greater than that of the TCO films far away from the silicon substrate. doping concentration of the film.
  • the front TCO layer may include four layers of TCO thin films, and the four layers of TCO thin films are respectively arranged as a first front TCO thin film and a second front TCO thin film in a direction from adjacent to away from the silicon substrate.
  • the first front TCO film is an indium oxide-based TCO film with a thickness of 10nm and a tin doping concentration of 10wt%
  • the second front TCO film has a thickness of is an indium oxide-based TCO film with a thickness of 20nm and a tin doping concentration of 3wt%
  • the third front TCO film is an indium oxide-based TCO film with a thickness of 30nm and a tin doping concentration of 10wt%
  • the film 214 is an indium oxide-based TCO film with a thickness of 30 nm and a tin doping concentration of 3 wt%.
  • the high-doped TCO film has high electrical conductivity, and the low-doped TCO film has good light transmittance.
  • the TCO film with doping concentration decreasing from high to low is arranged on the front of the light-receiving surface, which can fully Utilize the different properties of highly doped TCO thin films and low doped TCO thin films on light transmittance and electrical conductivity to improve the short-circuit current of heterojunction cells and improve the photoelectric conversion efficiency.
  • the back TCO layer includes at least two TCO thin films, and the doping concentration of each TCO thin film increases sequentially from the direction close to the silicon substrate to the direction away from the silicon substrate;
  • the back TCO layer includes an even number of TCO thin films, and all TCO thin films are grouped in pairs from adjacent to far away from the silicon substrate, and the doping concentration of the TCO thin films adjacent to the silicon substrate in each group is less than that of the TCO thin films far away from the silicon substrate. doping concentration of the film.
  • the back TCO layer may include four layers of TCO thin films, and the four layers of TCO thin films are respectively arranged as a first back TCO thin film and a second back TCO thin film in a direction adjacent to and away from the silicon substrate.
  • the first back TCO film is an indium oxide-based TCO film with a thickness of 10nm and a tin doping concentration of 3wt%
  • the second back TCO film has a thickness of 20nm indium oxide-based TCO film with a tin doping concentration of 10wt%
  • the third back TCO film 223 is an indium oxide-based TCO film with a thickness of 30nm and a tin doping concentration of 3wt%
  • the film 224 is an indium oxide-based TCO film with a thickness of 30 nm and a tin doping concentration of 10 wt%.
  • the high-doped TCO film has high electrical conductivity
  • the low-doped TCO film has good light transmittance.
  • TCO films with doping concentrations increasing in sequence from low to high can fully Utilizing the different performances of highly doped TCO films and low doped TCO films on light transmittance and electrical conductivity, the setting of TCO film stacks can enhance the long-wave reflection of light on the back, improve the short-circuit current of heterojunction cells, and improve photoelectric conversion efficiency. .
  • the front passivation layer and/or the back passivation layer is an intrinsic silicon passivation layer, and the thickness of the front passivation layer and/or the back passivation layer is 4 nm to 10 nm.
  • the n-type doped layer can be an n-type doped amorphous silicon or microcrystalline silicon layer, the doping concentration is 0.5wt% to 5wt%, and the thickness of the n-type doped layer is 5nm to 5nm. 15nm;
  • the p-type doped layer is a p-type doped amorphous silicon or microcrystalline silicon layer, the doping concentration is 0.5wt% to 5wt%, and the p-type doped layer has a thickness of 8nm to 20nm.
  • the front electrode and/or the back electrode may be a silver grid line electrode with a thickness of 2 ⁇ m to 50 ⁇ m.
  • a front passivation layer, an n-type doped layer and a front TCO layer are sequentially deposited on the front side of the silicon substrate, and a back passivation layer, a p-type doped layer and a back TCO layer are sequentially deposited on the back side of the silicon substrate;
  • a front electrode is prepared on the surface of the front TCO layer, and a back electrode is prepared on the surface of the back TCO layer.
  • the deposition method of the TCO film can be: radio frequency sputtering, DC sputtering or pulse sputtering; the target is a planar target or a rotating target;
  • the process chamber pressure is 0.1Pa to 1Pa; the argon flow rate is 400sccm to 1000sccm; the oxygen flow rate is 5sccm to 50sccm; the silicon substrate temperature is 100°C to 220°C; the power is 5kW to 20kW.
  • the preparation methods of the front electrode and the back electrode can be: screen printing, evaporation, magnetron sputtering or inkjet printing;
  • the deposition methods of the front passivation layer, n-type doped layer, back passivation layer, and p-type doped layer are: PECVD, Cat.CVD or HWCVD; the temperature of the silicon substrate in the deposition method is 150°C to 250°C; the process chamber pressure is 10Pa to 100Pa.
  • FIG. 1 is a schematic structural diagram of a heterojunction solar cell provided in the first embodiment of the present application
  • FIG. 2 is a schematic structural diagram of a heterojunction solar cell provided in the second embodiment of the present application.
  • Icon 100-heterojunction solar cell; 110-silicon substrate; 120-front passivation layer; 130-n-type doped layer; 141-first front TCO film; 142-second front TCO film; 150-front Electrode; 160-back passivation layer; 170-p-type doped layer; 181-first back TCO film; 182-second back TCO film; 190-back electrode; 200-heterojunction solar cell; 211-first 212-second front TCO film; 213-third front TCO film; 214-fourth front TCO film; 221-first back TCO film; 222-second back TCO film; 223-third back TCO film Film; 224 - fourth backside TCO film.
  • the TCO thin film has the following important functions in heterojunction solar cells: 1. As a surface anti-reflection window layer, it needs to have excellent optical transmittance, low parasitic absorption and suitable optical The refractive index allows the incident light to enter the silicon absorbing layer to the maximum; 2. As a carrier collection and transport layer, it needs to have excellent lateral and vertical conductivity, effectively collect and transmit to the low-conductivity amorphous silicon thin film layer; 3. , As a protective layer, it needs to have good chemical inertness and ion barrier properties to effectively protect the amorphous silicon thin film layer.
  • TCO thin films in heterojunction solar cells are usually prepared by magnetron sputtering (PVD), and the widely used TCO target material has a tin doping concentration of about 10wt%.
  • Indium oxide referred to as 9010 target.
  • the reliability of the heterojunction solar cells obtained by using the 9010 target is poor, which is mainly reflected in the severe attenuation in the sodium resistance test, damp heat test (DH), and thermal cycle test (TC).
  • the applicant analyzed the reason and speculated that the main reason is that when the TCO target material with high tin doping concentration is prepared into a TCO film by PVD technology, there are many defects formed inside the film, and the compactness is not good, which cannot effectively block the particles that damage the battery structure. Get inside the battery.
  • the applicant further speculates that the target material with low doping concentration has a low content of impurity ions, and when the TCO film is prepared by PVD technology, there are fewer internal defects, and the film has good compactness, which can effectively prevent particles that destroy the battery structure from entering the battery. Thereby improving the reliability of the battery and reducing the aging and attenuation of the battery.
  • the oxygen partial pressure also has a certain influence on the reliability of the battery, mainly by adjusting the oxygen vacancy defects inside the TCO film; in general, under high oxygen conditions, the concentration of oxygen vacancies inside the TCO film is low, and the battery reliability is better ; Under low oxygen conditions, the concentration of oxygen vacancies inside the TCO film is high, and the reliability of the battery is poor.
  • orientation or positional relationship indicated by the terms “upper”, “lower”, “inner”, “outer” etc. is based on the orientation or positional relationship shown in the drawings, or the The usual orientation or positional relationship of the application product when used is only for the convenience of describing the application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, therefore It should not be construed as a limitation of the application.
  • the terms “first”, “second”, “third”, etc. are only used for distinguishing descriptions, and should not be construed as indicating or implying relative importance.
  • a heterojunction solar cell according to some embodiments of the present application will be described below with reference to FIG. 1 .
  • the heterojunction solar cell 100 includes a silicon substrate 110, and the silicon substrate 110 has two surfaces, respectively the front (direct light surface) and the back ( The surface opposite to the surface directly irradiated by light), the front side of the silicon substrate 110 is sequentially superimposed with a front passivation layer 120, an n-type doped layer 130, a front TCO layer and a front electrode 150, and the back side of the silicon substrate 110 is sequentially superimposed with a back side
  • the passivation layer 160, the p-type doped layer 170, the back TCO layer and the back electrode 190, the front TCO layer and/or the back TCO layer include at least two stacked TCO films, wherein some layers of TCO films are low-doped TCO film, some layers of TCO film are highly doped TCO film.
  • the silicon substrate 110 is an n-type single crystal silicon substrate.
  • the front passivation layer 120 is an intrinsic silicon passivation layer, such as an intrinsic amorphous silicon passivation layer or an intrinsic microcrystalline silicon passivation layer, and the thickness of the front passivation layer 120 is 4nm to 10nm.
  • the back passivation layer 160 is an intrinsic silicon passivation layer, such as an intrinsic amorphous silicon passivation layer or an intrinsic microcrystalline silicon passivation layer, and the thickness of the back passivation layer 160 is 4 nm to 10 nm.
  • the front passivation layer 120 is an intrinsic amorphous silicon passivation layer a-Si:H(i) with a thickness of 8 nm.
  • the n-type doped layer 130 is an n-type doped amorphous silicon layer or an n-type doped microcrystalline silicon layer, the doping concentration is 0.5wt% to 5wt%, and the thickness of the n-type doped layer 130 is 5nm to 15nm.
  • the n-type doped layer 130 is an n-type doped amorphous silicon layer a-Si:H(i) ⁇ n> film with a thickness of 10 nm.
  • the p-type doped layer 170 is a p-type doped amorphous silicon layer or a p-type doped microcrystalline silicon layer, the doping concentration is 0.5wt% to 5wt%, and the thickness of the p-type doped layer 170 is 8nm to 20nm.
  • the p-type doped layer 170 is a p-type doped amorphous silicon layer a-Si:H(i) ⁇ p> film with a thickness of 12 nm.
  • a combination of a highly doped TCO film with a relatively high doping concentration and a low-doped TCO film with a relatively low doping concentration is combined to take into account the cost, efficiency and reliability of the heterojunction solar cell 100 .
  • TCO films are tin-doped or undoped indium oxide-based or zinc oxide-based films, such as tin-doped indium oxide (ITO, In 2 O 3 : Sn), aluminum-doped zinc oxide (AZO, ZnO: Al) , fluorine-doped tin oxide (FTO, SnO 2 : F), antimony-doped tin oxide (ATO, Sn 2 O: Sb), the doping concentration is 0wt% to 20wt%, and the doping of the low-doped TCO film The concentration is 0wt% to 5wt% (low doping range), and the doping concentration of the highly doped TCO thin film is 8wt% to 15wt% (high doping range).
  • the thickness of the TCO thin film is 10nm to 80nm, wherein the thickness of the low doped TCO thin film is 10nm to 80nm, and the thickness of the high doped TCO thin film is 20nm to 80
  • the front TCO layer and the back TCO layer are respectively provided with a low-doped TCO film and a high-doped TCO film at the same time, that is, the low-doped TCO film and the high-doped TCO film in the front TCO layer and the back TCO layer respectively according to The doping concentration is gradually changed sequentially or alternately.
  • only the front TCO layer can adopt the above-mentioned design
  • the back TCO layer can adopt a conventional design, that is, a single-layer TCO film
  • the back TCO layer can adopt the above-mentioned design
  • the front TCO layer can adopt a conventional design, that is, a single-layer TCO film. film.
  • the front TCO layer includes at least two layers of TCO films, and the doping of each layer of TCO films The concentration decreases sequentially in a direction from being close to the silicon substrate 110 to being far away from the silicon substrate 110 .
  • the front TCO layer includes an even number of TCO films, and all the TCO films are arranged in a direction from adjacent to far away from the silicon substrate 110. Two by two form a group, and the doping concentration of the TCO thin films adjacent to the silicon substrate 110 in each group is greater than the doping concentration of the TCO thin films far from the silicon substrate 110 .
  • the front TCO layer includes two layers of TCO thin films, and the two layers of TCO thin films are arranged in the direction adjacent to and far away from the silicon substrate 110, which are respectively a first front TCO film 141 and a second front TCO film 142.
  • the film 141 is an indium oxide-based TCO film (highly doped TCO film) with a thickness of 20 nm and a tin doping concentration of 10 wt%
  • the second front TCO film 142 is an indium oxide film with a thickness of 70 nm and a tin doping concentration of 3 wt%.
  • Base TCO film low doped TCO film).
  • the front TCO layer includes n layers of TCO thin films, n>3, respectively marked as TCO1, TCO2, TCO3, ..., TCOn, and all the above TCO thin films are arranged in a direction from adjacent to away from the silicon substrate 110 (according to The doping concentration of TCO1 , TCO2 , TCO3 , .
  • the back TCO layer includes at least two TCO films, and the doping of each TCO film The concentration increases sequentially in a direction from being close to the silicon substrate 110 to being far away from the silicon substrate 110 .
  • the back TCO layer includes an even number of TCO films, and all the TCO films are arranged in a direction from adjacent to far away from the silicon substrate 110.
  • the doping concentration of the TCO films adjacent to the silicon substrate 110 in each group is smaller than the doping concentration of the TCO films far away from the silicon substrate 110 .
  • the back TCO layer includes two layers of TCO films, and the two layers of TCO films are arranged in the direction from adjacent to far away from the silicon substrate 110 and are respectively a first back TCO film 181 and a second back TCO film 182.
  • the film 181 is an indium oxide-based TCO film (lowly doped TCO film) with a thickness of 20nm and a tin doping concentration of 3wt%
  • the second back TCO film 182 is an indium oxide film with a thickness of 70nm and a tin doping concentration of 10wt%.
  • Base TCO film highly doped TCO film).
  • the back TCO layer may also include n layers of TCO thin films, n>3, respectively marked as TCO1, TCO2, TCO3, ..., TCOn, and all the above-mentioned TCO thin films are arranged in a direction from adjacent to away from the silicon substrate 110 (according to the deposition sequence) the doping concentration increases sequentially, and the doping concentrations of TCO1, TCO2, TCO3, . . .
  • the front electrode 150 is a silver wire electrode with a thickness of 2 ⁇ m to 50 ⁇ m.
  • the back electrode 190 is a silver grid line electrode with a thickness of 2 ⁇ m to 50 ⁇ m.
  • both the front electrode 150 and the back electrode 190 are metallic silver grid lines with a thickness of 20 ⁇ m.
  • This embodiment also provides a method for preparing a heterojunction solar cell 100, which includes the following steps:
  • the front passivation layer 120, the n-type doped layer 130 and the front TCO layer are sequentially deposited on the front side of the silicon substrate 110, and the back passivation layer 160, the p-type doped layer are sequentially deposited on the back side of the silicon substrate 110. 170 and back TCO layer.
  • the deposition method of TCO film is: radio frequency sputtering, DC sputtering or pulse sputtering; corresponding PVD includes vertical PVD, inclined PVD and horizontal PVD, etc.; the target is a planar target or a rotating target; TCO
  • the chamber pressure of the film deposition process is 0.1Pa to 1Pa; the flow rate of argon is 400sccm to 1000sccm; the flow rate of oxygen is 5sccm to 50sccm; the temperature of the silicon substrate 110 is 100°C to 220°C; the power is 5kW to 20kW.
  • the front passivation layer 120, the n-type doped layer 130, the back passivation layer 160, and the p-type doped layer 170 can respectively adopt PECVD or Cat.CVD, HWCVD or other chemical vapor deposition methods; the temperature of the silicon substrate 110 is 150°C to 250°C; process chamber pressure is 10Pa to 100Pa.
  • a front electrode 150 is prepared on the surface of the front TCO layer, and a back electrode 190 is prepared on the surface of the back TCO layer.
  • the preparation methods of the front electrode 150 and the back electrode 190 may be: screen printing, vapor deposition, magnetron sputtering or inkjet printing and other methods.
  • the preparation method of the heterojunction solar cell 100 of this embodiment is as follows:
  • the n-type single crystal silicon is used as the silicon substrate 110 and cleaned and textured to form a pyramid-shaped light-trapping structure.
  • the adjusted power is 13KW
  • the flow rate of argon is 800sccm
  • the flow rate of oxygen is 35sccm and 10sccm respectively, on a-Si:H(i) ⁇ p>, deposit 20nm thick tin-doped An indium oxide-based TCO film with a dopant concentration of 3wt% (the first back TCO film 181 ) and a 70nm-thick indium oxide-based TCO film with a tin doping concentration of 10wt% (the second back TCO film 182 ).
  • the power is adjusted to 13KW, the flow rate of argon is 800sccm, and the flow rate of oxygen is 12sccm and 30sccm respectively, and the tin doped with a thickness of 20nm is sequentially deposited on a-Si:H(i) ⁇ n>
  • An indium oxide-based TCO film with a dopant concentration of 10wt% (the first front TCO film 141 ) and an indium oxide-based TCO film with a thickness of 70nm and a tin doping concentration of 3wt% (the second front TCO film 142 ).
  • the aging attenuation of the heterojunction solar cell 100 made by the conventional process is 8% in the first test, and the aging attenuation in the second test is 8%. 9%, and the aging decay of the third test is 8%.
  • the aging decay of the heterojunction solar cell 100 in this embodiment is 1.5% in the first test, 2.5% in the second test, and 2% in the third test.
  • the heterojunction solar cell 100 of this embodiment improves the conductivity of the TCO layer and the carrier collection efficiency, enhances current collection, and can effectively reduce aging attenuation and improve reliability. .
  • the heterojunction solar cell 200 includes a silicon substrate 110.
  • the impurity layer 130, the front TCO layer and the front electrode 150, the back side of the silicon substrate 110 are successively provided with a back passivation layer 160, a p-type doped layer 170, a back TCO layer and a back electrode 190, a front TCO layer and a back TCO layer Including four layers of superimposed TCO films, wherein two layers of TCO films are low-doped TCO films with a doping concentration of 0wt% to 5wt%, and two layers of TCO films are high-doped TCO films with a doping concentration of 8wt% to 15wt%. film.
  • the silicon substrate 110 is an n-type single crystal silicon substrate.
  • Both the front passivation layer 120 and the back passivation layer 160 are intrinsic amorphous silicon passivation layers a-Si:H(i) with a thickness of 8 nm.
  • the n-type doped layer 130 is an n-type doped amorphous silicon layer a-Si:H(i) ⁇ n> film with a thickness of 10 nm.
  • the p-type doped layer 170 is a p-type doped amorphous silicon layer a-Si:H(i) ⁇ p> film with a thickness of 12 nm.
  • the front TCO layer includes four layers of TCO films, and these four layers of TCO films are arranged in a direction from adjacent to far away from the silicon substrate 110, respectively as a first front TCO film 211, a second front TCO film 212, a third front TCO film 213 and a fourth front TCO film.
  • the front TCO film 214, the first front TCO film 211 is an indium oxide-based TCO film (highly doped TCO film) with a thickness of 10nm and a tin doping concentration of 10wt%
  • the second front TCO film 212 is a thickness of 20nm, tin Indium oxide-based TCO film (lowly doped TCO film) with a doping concentration of 3wt%
  • the third front TCO film 213 is an indium oxide-based TCO film (highly doped TCO film) with a thickness of 30nm and a tin doping concentration of 10wt%
  • the fourth front TCO film 214 is an indium oxide-based TCO film (lowly doped TCO film) with a thickness of 30 nm and a tin doping concentration of 3 wt%.
  • the back TCO layer includes four layers of TCO films, and these four layers of TCO films are arranged in a direction from adjacent to far away from the silicon substrate 110, respectively as a first back TCO film 221, a second back TCO film 222, a third back TCO film 223 and a fourth back TCO film.
  • the back TCO film 224, the first back TCO film 221 is an indium oxide-based TCO film (lowly doped TCO film) with a thickness of 10 nm and a tin doping concentration of 3 wt%
  • the second back TCO film 222 is a thickness of 20 nm, tin
  • the doping concentration is an indium oxide-based TCO film (highly doped TCO film) with a doping concentration of 10wt%.
  • the fourth back TCO film 224 is an indium oxide-based TCO film (highly doped TCO film) with a thickness of 30 nm and a tin doping concentration of 10 wt%.
  • Both the front electrode 150 and the back electrode 190 are metallic silver grid lines with a thickness of 20 ⁇ m.
  • the preparation method of the heterojunction solar cell 200 is as follows:
  • the n-type single crystal silicon is used as the silicon substrate 110 and cleaned and textured to form a pyramid-shaped light-trapping structure.
  • the power is adjusted to 13KW, the flow rate of argon gas is 800 sccm, and the flow rate of oxygen gas is 35 sccm, 20 sccm, 10 sccm, and 5 sccm respectively, and 10 nm is sequentially deposited on a-Si:H(i) ⁇ p>
  • the indium oxide-based TCO film (the first front TCO film 211) with a tin doping concentration of 3wt%
  • the indium oxide-based TCO film (the second front TCO film 212) with a 20nm tin doping concentration of 10wt%
  • the 30nm tin doping concentration 3wt% indium oxide-based TCO thin film (third front TCO thin film 213 ), 30nm indium oxide-based TCO thin film with tin doping concentration of 10wt% (fourth front TCO thin film 214 ).
  • the indium oxide-based TCO film (the first back TCO film 221) with a tin doping concentration of 10wt%
  • the indium oxide-based TCO film (the second back TCO film 222) with a 20nm tin doping concentration of 3wt%
  • the 30nm tin doping concentration 10wt% indium oxide-based TCO film (third back TCO film 223 ), 30nm indium oxide-based TCO film with tin doping concentration of 3wt% (fourth back TCO film 224 ).
  • the heterojunction solar cell 200 and its preparation method according to the embodiment of the present application can effectively improve the reliability of the heterojunction solar cell 200 and slow down the aging of the heterojunction solar cell 200 while ensuring the cost and efficiency of the cell. attenuation.
  • the application provides a heterojunction solar cell and a preparation method thereof, relating to the field of heterojunction solar cells.
  • the heterojunction solar cell includes a silicon substrate, the front side of the silicon substrate is sequentially provided with a front passivation layer, an n-type doped layer, a front TCO layer and a front electrode, and the back side of the silicon substrate is sequentially provided with a rear passivation layer.
  • layer, p-type doped layer, back TCO layer and back electrode, the front TCO layer and/or the back TCO layer include at least two layers of TCO films, wherein the TCO films of some layers are low-doped TCO films with a doping concentration of 0wt% to 5wt%.
  • the doped TCO thin film, the TCO thin film of some layers is a highly doped TCO thin film with a doping concentration of 8wt% to 15wt%.
  • the heterojunction solar cell and the preparation method thereof effectively improve the reliability of the heterojunction solar cell and slow down the aging attenuation of the heterojunction solar cell while ensuring the cost and efficiency of the cell. .
  • heterojunction solar cell of the present application and its fabrication method are reproducible and can be used in various industrial applications.
  • the heterojunction solar cell and its preparation method of the present application can be used in the field of heterojunction solar cells.

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Abstract

Des modes de réalisation de la présente invention concernent le domaine des cellules solaires à hétérojonction, et fournissent une cellule solaire à hétérojonction et son procédé de préparation. La cellule solaire à hétérojonction comprend un substrat de silicium ; une couche de passivation côté avant, une couche dopée de type n, une couche de TCO côté avant et une électrode côté avant sont disposées séquentiellement sur le côté avant du substrat de silicium dans un mode de superposition ; une couche de passivation côté arrière, une couche dopée de type p, une couche de TCO côté arrière et une électrode côté arrière sont disposées séquentiellement sur le côté arrière du substrat de silicium dans un mode de superposition ; la couche de TCO côté avant et/ou la couche de TCO côté arrière comprend/comprennent au moins deux couches de films minces de TCO, les films minces de TCO de certaines couches sont des films minces de TCO faiblement dopés dont la concentration de dopage est de 0 % en poids à 5 % en poids, et les films minces de TCO de certaines couches sont des films minces de TCO fortement dopés dont la concentration de dopage est de 8 % en poids à 15 % en poids. Selon la cellule solaire à hétérojonction et son procédé de préparation, la fiabilité de la cellule solaire à hétérojonction est efficacement améliorée et l'atténuation du vieillissement de la cellule solaire à hétérojonction est ralentie tandis que le coût et l'efficacité de la cellule sont assurés.
PCT/CN2022/089454 2021-05-28 2022-04-27 Cellule solaire à hétérojonction et son procédé de préparation WO2022247570A1 (fr)

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CN113675302B (zh) * 2021-08-18 2024-04-26 浙江爱旭太阳能科技有限公司 一种hjt电池的加工方法以及一种hjt电池

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