WO2022227452A1 - 顶发光显示面板及显示装置 - Google Patents

顶发光显示面板及显示装置 Download PDF

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WO2022227452A1
WO2022227452A1 PCT/CN2021/126749 CN2021126749W WO2022227452A1 WO 2022227452 A1 WO2022227452 A1 WO 2022227452A1 CN 2021126749 W CN2021126749 W CN 2021126749W WO 2022227452 A1 WO2022227452 A1 WO 2022227452A1
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Prior art keywords
light
emitting structure
wavelength
layer
display panel
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PCT/CN2021/126749
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English (en)
French (fr)
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贾文斌
朱飞飞
万想
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京东方科技集团股份有限公司
合肥京东方卓印科技有限公司
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Priority to US17/915,742 priority Critical patent/US20240215403A1/en
Publication of WO2022227452A1 publication Critical patent/WO2022227452A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the technical field of display devices, and in particular, to a top emission display panel and a display device.
  • OLED Organic Light-Emitting Diode
  • LCD Organic Light-Emitting Diode
  • OLED has the advantages of self-luminescence, fast response, wide viewing angle, high brightness, bright color, thin and light, etc., and is considered to be the next generation display technology.
  • OLED devices are usually composed of an anode layer, a light-emitting layer and a cathode layer, which can be divided into bottom-emission and top-emission according to different light-emitting surfaces. Since the top-emission device can obtain a larger aperture ratio, it has become a research hotspot in recent years.
  • the external quantum efficiency EQE of the actual OLED device is much lower than the theoretical OLED light extraction efficiency.
  • the main factors affecting the external quantum efficiency of OLEDs are the exciton conversion efficiency of the OLED itself, the internal conversion efficiency of the excitons themselves, the transmission and consumption of the OLED light at the interface, the plasma effect and the total reflection effect of the OLED itself at the metal interface. Therefore, how to improve the light extraction rate of OLED display devices is a common problem in the industry and needs to be solved urgently.
  • the present invention provides a top emission display panel and a display device to solve the deficiencies in the related art.
  • a first aspect of the embodiments of the present invention provides a top-emitting display panel, including:
  • a light-emitting structure located on the substrate includes: a first light-emitting structure, a second light-emitting structure and a third light-emitting structure, the light-emitting wavelength of the first light-emitting structure is a first wavelength, and the second light-emitting structure
  • the light-emitting wavelength of the third light-emitting structure is the second wavelength
  • the light-emitting wavelength of the third light-emitting structure is the third wavelength
  • the first wavelength is greater than the second wavelength
  • the second wavelength is greater than the third wavelength
  • the cover plate layer located on the side of the light emitting structure away from the substrate; the cover plate layer at least includes a first area located on the first light emitting structure and a second area located on the second light emitting structure, and two of the third regions located on the third light-emitting structure, the equivalent optical path length of the first region in the thickness direction is twice the integer multiple of the first wavelength, and the second region is Twice the equivalent optical path in the thickness direction is an integer multiple of the second wavelength, and twice the equivalent optical path in the thickness direction of the third region is an integer multiple of the third wavelength.
  • the cover layer includes a first region on the first light emitting structure, a second region on the second light emitting structure, and a third region on the third light emitting structure.
  • the cover layer includes an optical adjustment layer and/or a planarization layer.
  • the material of the optical adjustment layer is silicon nitride, silicon dioxide, silicon oxynitride, IZO, ITO, polymer resin or PI.
  • the material of the planarization layer is PI or SOG.
  • the extinction coefficient of the optical adjustment layer in the visible light wavelength range is not greater than 0.05.
  • the extinction coefficient of the planarization layer in the visible light wavelength range is 0-0.1.
  • the first light emitting structure is a red light emitting structure
  • the second light emitting structure is a green light emitting structure
  • the third light emitting structure is a blue light emitting structure.
  • the red organic layer of the red light emitting structure, and/or the green organic layer of the green light emitting structure, and/or the blue organic layer of the blue light emitting structure adopts a printing method or an evaporation method. form.
  • a color filter layer is provided between the cover layer and the light emitting structure.
  • a second aspect of the embodiments of the present invention provides a display device, including: the top emission display panel described in any one of the above.
  • the cover layer forms different micro-resonator cavities for light-emitting structures of different wavelengths, thereby improving the light extraction rate of the corresponding wavelengths. Therefore, power consumption can be reduced, and the lifespan of the display panel can be increased.
  • FIG. 1 is a schematic cross-sectional structure diagram of a top-emitting display panel according to a first embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional structure diagram of a top-emitting display panel according to a second embodiment of the present invention.
  • FIG. 3 is a schematic cross-sectional structure diagram of a top-emitting display panel according to a third embodiment of the present invention.
  • the second light-emitting structure 112 The third light-emitting structure 113
  • the first wavelength ⁇ 1 The second wavelength ⁇ 2
  • the third wavelength ⁇ 3 The cover layer 12, 12'
  • the first area 121 The second area 122
  • the third region 123 The planarization layer 12b
  • the first color filter block 131 The second color filter block 132
  • FIG. 1 is a schematic cross-sectional structure diagram of a top-emitting display panel according to a first embodiment of the present invention.
  • a top-emitting display panel 1 includes:
  • the light-emitting wavelength of 112 is the second wavelength ⁇ 2
  • the light-emitting wavelength of the third light-emitting structure 113 is the third wavelength ⁇ 3, the first wavelength ⁇ 1 is greater than the second wavelength ⁇ 2, and the second wavelength ⁇ 2 is greater than the third wavelength ⁇ 3;
  • the cover layer 12 is located on the side of the light emitting structure 11 away from the substrate 10; the cover layer 12 includes a first region 121 on the first light emitting structure 111, a second region 122 on the second light emitting structure 112, and a second region 122 on the second light emitting structure 112.
  • twice the equivalent optical path length of the first region 121 in the thickness direction is an integer multiple of the first wavelength ⁇ 1
  • the equivalent optical path length of the second region 122 in the thickness direction is twice as long is an integer multiple of the second wavelength ⁇ 2
  • twice the equivalent optical length of the third region 123 in the thickness direction is an integer multiple of the third wavelength ⁇ 3.
  • the substrate 10 can be a soft substrate, and the material can be polyimide, for example.
  • the substrate 10 can also be a hard substrate, and the material can be glass, for example.
  • the first light emitting structure 111 may be a red light emitting structure
  • the second light emitting structure 112 may be a green light emitting structure
  • the third light emitting structure 113 may be a blue light emitting structure.
  • the red light emitting structure may include: a first anode, a first cathode, and a red light emitting layer disposed between the first anode and the first cathode.
  • the green light emitting structure may include: a second anode, a second cathode, and a green light emitting layer disposed between the second anode and the second cathode.
  • the blue light emitting structure may include: a third anode, a third cathode, and a blue light emitting layer disposed between the third anode and the third cathode.
  • the materials of the red light emitting layer, the green light emitting layer and the blue light emitting layer can all be organic light emitting materials (OLED).
  • the organic light-emitting material can be formed by a printing method or an evaporation method.
  • the materials of the first anode, the second anode and the third anode may be reflective materials.
  • the reflective material may include silver (Ag) and its alloys, aluminum (Al) and its alloys, such as silver (Ag), alloys of silver and lead (Ag:Pb), alloys of aluminum and neodymium (Al:Nd), silver Alloys of platinum and copper (Ag:Pt:Cu), etc.
  • a layer of ITO, IZO or IGZO may be disposed between the first anode, the second anode and the third anode respectively and the organic light-emitting material.
  • the materials of the first cathode, the second cathode and the third cathode may be materials with partial light transmission and partial light reflection functions (semi-transmissive and semi-reflective materials).
  • the first cathode, the second cathode and the third cathode may be single-layer structures, and the material of the single-layer structure may include: at least one of magnesium, silver, and aluminum, such as: a mixture of magnesium and silver or a mixture of aluminum and silver. mixture.
  • the first cathode, the second cathode and the third cathode may also have a three-layer structure of a transparent conductive layer, an intermediate layer, and a transparent conductive layer.
  • the material of the transparent conductive layer can be at least one of ITO, IZO and IGZO, and the material of the intermediate layer includes at least one of magnesium, silver, and aluminum, such as a mixture of magnesium and silver or a mixture of aluminum and silver.
  • the first light emitting structure 111 , the second light emitting structure 112 and the third light emitting structure 113 are top light emitting structures.
  • the first cathode, the second cathode and the third cathode may be connected together to form a one-sided electrode.
  • the light-emitting structure 11 of three primary colors of red, green and blue forms a light-emitting unit.
  • a light-emitting unit may also be formed by the light-emitting structure 11 having four primary colors of red, green, blue, and yellow.
  • the light-emitting structure 11 may be an OLED (Active Matrix OLED, AMOLED) in an actively driven light-emitting manner.
  • OLED Active Matrix OLED
  • pixel driving circuits are disposed between the first anode, the second anode, and the third anode, respectively, and the substrate 10 .
  • the active driving light emitting mode OLED also called the active driving light emitting mode OLED, uses a transistor array to control each pixel to emit light, and each light emitting structure 11 can emit light continuously. That is, the addressing of each light emitting structure 11 is directly controlled by the transistor array.
  • the light-emitting structure 11 may also be a passively driven light-emitting OLED. At this time, there is no pixel driving circuit between the first anode, the second anode, and the third anode, respectively, and the substrate 10 .
  • the cover layer 12 only includes the optical adjustment layer 12a.
  • the thickness of the optical adjustment layer 12a in the first area 121 may be d1, and the refractive index for the light of the first wavelength ⁇ 1 may be n1; the thickness of the optical adjustment layer 12a in the second area 122 may be d2, and for the light of the first wavelength ⁇ 2
  • the refractive index of light may be n2; the thickness of the optical adjustment layer 12a of the third region 123 may be d3, and the refractive index for light of the third wavelength ⁇ 3 may be n3.
  • the first region 121, the second region 122, and the third region 123 that meet the above conditions have less reflection at the light-emitting interface, forming a micro-resonant cavity, and at the same time increasing the corresponding first wavelength ⁇ 1, second wavelength ⁇ 2, and third wavelength ⁇ 3 of light output. Therefore, power consumption can be reduced, and the lifespan of the display panel can be increased.
  • the cover layer 12 may further include a first region 121 on the first light emitting structure 111 , a second region 122 on the second light emitting structure 112 , and a third region on the third light emitting structure 113 Two of 123.
  • the cover layer 12 includes the first region 121 and the second region 122, the first region 121 and the second region 122 satisfying the above conditions have less reflection at the light-emitting interface, forming a micro-resonant cavity, which can simultaneously improve the corresponding first region 121 and the second region 122.
  • the specific material of the optical adjustment layer 12a is silicon nitride, silicon dioxide, silicon oxynitride, IZO (indium zinc oxide), ITO (indium tin oxide), polymer resin or PI (polyimide).
  • Different materials and/or thicknesses of the optical adjustment layer 12a in each region may be selected through a patterning process.
  • the extinction coefficient of the optical adjustment layer 12a in the visible light wavelength range is preferably small, so as to avoid strong absorption of the wave by itself and improve the light extraction rate.
  • the extinction coefficient of the optical adjustment layer 12a in the visible light wavelength range is preferably not more than 0.05. Visible light wavelength range: 380nm ⁇ 780nm.
  • FIG. 2 is a schematic cross-sectional structure diagram of a top-emitting display panel according to a second embodiment of the present invention.
  • the top emission display panel 2 of this embodiment is substantially the same as the top emission display panel 1 in FIG. 1 , the only difference being that the cover layer 12 ′ includes an optical adjustment layer 12 a and a planarization layer 12 b.
  • the thickness of the optical adjustment layer 12a in the first area 121 may be d1, and the refractive index for the light of the first wavelength ⁇ 1 may be n1; the thickness of the optical adjustment layer 12a in the second area 122 may be d2, and for the light of the first wavelength ⁇ 2
  • the refractive index of light may be n2; the thickness of the optical adjustment layer 12a in the third region 123 may be d3, and the refractive index for the light of the third wavelength ⁇ 3 may be n3;
  • the thickness of the planarization layer 12b in the first region 121 may be D1, the refractive index for the light of the first wavelength ⁇ 1 may be N1; the thickness of the planarizing layer 12b in the second region 122 may be D2, and the refractive index for the light of the first wavelength ⁇ 2 may be N2;
  • the thickness of the planarizing layer 12b may be D3, and the refractive index for light of the third wavelength ⁇ 3 may be N3.
  • the first region 121, the second region 122, and the third region 123 that meet the above conditions have less reflection at the light-emitting interface, forming a micro-resonant cavity, and at the same time increasing the corresponding first wavelength ⁇ 1, second wavelength ⁇ 2, and third wavelength ⁇ 3 of light output. Therefore, power consumption can be reduced, and the lifespan of the display panel can be increased.
  • the cover layer 12 ′ may further include a first region 121 located on the first light emitting structure 111 , a second region 122 located on the second light emitting structure 112 , and a third region 122 located on the third light emitting structure 113 . two in area 123.
  • the cover layer 12' includes the first region 121 and the second region 122, the first region 121 and the second region 122 satisfying the above conditions have less reflection at the light exit interface, forming a micro-resonant cavity, which can improve the corresponding The light extraction rate of the first wavelength ⁇ 1 and the second wavelength ⁇ 2.
  • an optical simulation is carried out in this embodiment. Through optical simulation, it can be concluded that when each region of the cover layer 12 ′ conforms to a single optical path equal to an integer multiple of the corresponding half wavelength, the light extraction rate of each light-emitting structure can be improved.
  • the optical adjustment layer 12a and the planarization layer 12b jointly affect the light extraction rate.
  • the influence degree of each parameter of the optical adjustment layer 12a on the light extraction rate is greater than the influence degree of each parameter of the planarization layer 12b on the light extraction rate.
  • the specific material of the optical adjustment layer 12a is silicon nitride, silicon dioxide, silicon oxynitride, IZO, ITO, polymer resin or PI; the specific material of the planarization layer 12b can be PI or SOG (organosiloxane resin).
  • the extinction coefficient of the planarization layer 12b in the visible light wavelength range is preferably small, so as to avoid strong absorption of the wave by itself and improve the light extraction rate.
  • the extinction coefficient of the planarization layer 12b in the visible light wavelength range may be 0 ⁇ 0.1.
  • the numerical range includes the endpoints.
  • the cover layer 12' may further include only the planarization layer 12b. It is sufficient that at least two of the first region 121 , the second region 122 and the third region 123 satisfy the above resonant cavity conditions.
  • FIG. 3 is a schematic cross-sectional structure diagram of a top-emitting display panel according to a third embodiment of the present invention.
  • the top-emitting display panel 3 of this embodiment is substantially the same as the top-emitting display panels 1 and 2 in FIG. 1 and FIG. Layer 13.
  • the color filter layer 13 may include a first color filter block 131 , a second color filter block 132 and a third color filter block 133 .
  • the first color filter block 131 allows the wave of the first wavelength ⁇ 1 of the first light emitting structure 111 to pass through;
  • the second color filter block 132 allows the wave of the second wavelength ⁇ 2 of the second light emitting structure 112 to pass through;
  • the wave of the third wavelength ⁇ 3 of the three light-emitting structures 113 passes.
  • the first color filter block 131 is a red color filter block
  • the second color filter block 132 is a green color filter block
  • the third color filter block 133 is a blue color filter block.
  • the light-shielding structure 14 corresponds to the lap joint, and can shield the lap joint from light.
  • the color filter layer 13 can improve the monochromaticity of light emitted corresponding to the first wavelength ⁇ 1 , the second wavelength ⁇ 2 and the third wavelength ⁇ 3 .
  • an embodiment of the present invention further provides a display device including any of the above-mentioned top-emitting display panels 1 , 2 , and 3 .
  • the display device can be any product or component with display function, such as electronic paper, mobile phone, tablet computer, television, notebook computer, digital photo frame, and navigator.
  • first and second are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.
  • severe refers to one, two or more, unless expressly limited otherwise.

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Abstract

本发明提供了一种顶发光显示面板及显示装置，顶发光显示面板包括：基底、发光结构以及盖板层，发光结构包括：第一发光结构，第二发光结构以及第三发光结构，对应发光波长分别为第一波长、第二波长、第三波长；盖板层位于发光结构远离基底的一侧，至少包括位于第一发光结构上的第一区域，位于第二发光结构上的第二区域，以及位于第三发光结构上的第三区域中的两个，第一区域在厚度方向的等效光程的两倍为第一波长的整数倍，第二区域在厚度方向的等效光程的两倍为第二波长的整数倍，第三区域在厚度方向的等效光程的两倍为第三波长的整数倍。根据本发明实施例，可同时提高对应第一波长、第二波长、第三波长的出光率，降低功耗，提高显示面板的寿命。

Description

顶发光显示面板及显示装置 技术领域
本发明涉及显示设备技术领域，尤其涉及一种顶发光显示面板及显示装置。
背景技术
有机电致发光器件(OrganicLight-Emitting Diode，OLED)作为一种新型的发光器件在显示和照明领域体现出了巨大的应用潜力而，因而受到了学术界和产业界的强烈关注。在显示领域，OLED相对于LCD具有自发光、反应快、视角广、亮度高、色彩艳、轻薄等优点，被认为是下一代显示技术。
现有OLED器件通常由阳极层、发光层和阴极层组成，根据发光面不同可分为底发射和顶发射两种，由于顶发射器件可以获得更大的开口率，近年来成为研究的热点。
实际OLED器件的外量子效率EQE远低于理论的OLED的出光效率。影响OLED的外量子效率的主要有OLED本身的激子转换效率、激子本身的内部转换效率、OLED出光在界面的传输及消耗、OLED本身在金属界面的等离子效应及全反射效应等原因。因此，如何提高OLED显示器件的出光率是行业内普遍存在而且亟待解决的问题。
发明内容
本发明提供一种顶发光显示面板及显示装置，以解决相关技术中的不足。
为实现上述目的，本发明实施例的第一方面提供一种顶发光显示面板，包括：
基底；
位于所述基底上的发光结构，所述发光结构包括：第一发光结构，第二发光结构以及第三发光结构，所述第一发光结构的发光波长为第一波长，所述第二发光结构的发光波长为第二波长，所述第三发光结构的发光波长为第三波长，所述第一波长大于所述第二波长，所述第二波长大于所述第三波长；
盖板层，位于所述发光结构远离所述基底的一侧；所述盖板层至少包括位于所述第一发光结构上的第一区域，位于所述第二发光结构上的第二区域，以及位于所述第三发光结构上的第三区域中的两个，所述第一区域在厚度方向的等效光程的两倍为所述第一波长的整数倍，所述第二区域在厚度方向的等效光程的两倍为所述第二波长的整数倍， 所述第三区域在厚度方向的等效光程的两倍为所述第三波长的整数倍。
可选地，所述盖板层包括位于所述第一发光结构上的第一区域，位于所述第二发光结构上的第二区域，以及位于所述第三发光结构上的第三区域。
所述盖板层包括光学调整层和/或平坦化层。
可选地，所述光学调整层的材料为氮化硅、二氧化硅、氮氧化硅、IZO、ITO、高分子树脂或PI。
可选地，所述平坦化层的材料为PI或SOG。
可选地，所述光学调整层在可见光波长范围内的消光系数不大于0.05。
可选地，所述平坦化层在可见光波长范围内的消光系数为0～0.1。
可选地，所述第一发光结构为红光发光结构，所述第二发光结构为绿光发光结构，所述第三发光结构为蓝光发光结构。
可选地，所述红光发光结构的红光有机层，和/或所述绿光发光结构的绿光有机层，和/或所述蓝光发光结构的蓝光有机层采用打印法或蒸镀法形成。
可选地，所述盖板层与所述发光结构之间具有滤色层。
本发明实施例的第二方面提供一种显示装置，包括：上述任一项所述的顶发光显示面板。
根据本发明的上述实施例中，盖板层针对不同波长的发光结构，形成不同微谐振腔，从而提高对应波长的出光率。因而，可降低功耗，提高显示面板的寿命。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本发明。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本发明的实施例，并与说明书一起用于解释本发明的原理。
图1是本发明第一实施例的顶发光显示面板的截面结构示意图；
图2是本发明第二实施例的顶发光显示面板的截面结构示意图；
图3是本发明第三实施例的顶发光显示面板的截面结构示意图。
附图标记列表：
顶发光显示面板1、2、3                 基底10
发光结构11                            第一发光结构111
第二发光结构112                       第三发光结构113
第一波长λ1                           第二波长λ2
第三波长λ3                           盖板层12、12'
第一区域121                           第二区域122
第三区域123                           平坦化层12b
光学调整层12a                         滤色层13
第一滤色块131                         第二滤色块132
第三滤色块133                         遮光结构14
具体实施方式
这里将详细地对示例性实施例进行说明，其示例表示在附图中。下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本发明相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本发明的一些方面相一致的装置和方法的例子。
图1是本发明第一实施例的顶发光显示面板的截面结构示意图。
参照图1所示，顶发光显示面板1，包括：
基底10；
位于基底10上的发光结构11，发光结构11包括：第一发光结构111，第二发光结构112以及第三发光结构113，第一发光结构111的发光波长为第一波长λ1，第二发光结构112的发光波长为第二波长λ2，第三发光结构113的发光波长为第三波长λ3，第一波长λ1大于第二波长λ2，第二波长λ2大于第三波长λ3；
盖板层12，位于发光结构11远离基底10的一侧；盖板层12包括位于第一发光结构111上的第一区域121，位于第二发光结构112上的第二区域122，以及位于第三发光结构113上的第三区域123，第一区域121在厚度方向的等效光程的两倍为第一波长λ1的整数倍，第二区域122在厚度方向的等效光程的两倍为第二波长λ2的整数倍，第三区域123在厚度方向的等效光程的两倍为第三波长λ3的整数倍。
基底10可以为软质基底，材料例如可以为聚酰亚胺。基底10也可以为硬质基底，材料例如可以为玻璃。
本实施例中，第一发光结构111可以为红光发光结构，第二发光结构112可以为绿光发光结构，第三发光结构113可以为蓝光发光结构。
红光发光结构可以包括：第一阳极、第一阴极以及设置于第一阳极与第一阴极之间的红光发光层。绿光发光结构可以包括：第二阳极、第二阴极以及设置于第二阳极与第二阴极之间的绿光发光层。蓝光发光结构可以包括：第三阳极、第三阴极以及设置于第三阳极与第三阴极之间的蓝光发光层。
红光发光层、绿光发光层以及蓝光发光层的材料都可以为有机发光材料(OLED)。有机发光材料可以采用打印法或蒸镀法形成。
第一阳极、第二阳极以及第三阳极的材料可以为反光材料。反光材料可以为包括银(Ag)及其合金、铝(Al)及其合金，例如银(Ag)、银和铅的合金(Ag：Pb)、铝和钕的合金(Al：Nd)、银铂铜的合金(Ag：Pt：Cu)等。当使用银及其合金作为反光材料时，在第一阳极、第二阳极以及第三阳极分别与有机发光材料之间可以设置一层ITO、IZO或IGZO。
第一阴极、第二阴极以及第三阴极的材料可以为具有部分透光、部分反光功能的材料(半透半反材料)。第一阴极、第二阴极以及第三阴极可以为单层结构，该单层结构的材料可以包括：镁、银、铝中的至少一种，例如为：镁与银的混合物或铝与银的混合物。第一阴极、第二阴极以及第三阴极也可以为透明导电层、中间层、透明导电层的三层结构。透明导电层的材料可以为ITO、IZO以及IGZO中的至少一种，中间层的材料包括：镁、银、铝中的至少一种，例如为：镁与银的混合物或铝与银的混合物。换言之，第一发光结构111，第二发光结构112以及第三发光结构113为顶发光结构。
第一阴极、第二阴极以及第三阴极可以连接在一起，形成一面电极。
红绿蓝三基色的发光结构11形成一发光单元。
其它实施例中，也可以红绿蓝黄四基色的发光结构11形成一发光单元。
发光结构11可以为主动驱动发光方式OLED(Active Matrix OLED，AMOLED)。换言之，第一阳极、第二阳极、第三阳极分别与基底10之间设置有像素驱动电路。
主动驱动发光方式OLED，也称有源驱动发光方式OLED，是采用晶体管阵列控制每个像素发光，且每个发光结构11可以连续发光。即，每个发光结构11的寻址直接受 控于晶体管阵列。
其它实施例中，发光结构11也可以为被动驱动发光方式OLED。此时，第一阳极、第二阳极、第三阳极分别与基底10之间无像素驱动电路。
本实施例中，参照图1所示，盖板层12仅包括光学调整层12a。
第一区域121的光学调整层12a的厚度可以为d1，对于第一波长λ1的光的折射率可以为n1；第二区域122的光学调整层12a的厚度可以为d2，对于第一波长λ2的光的折射率可以为n2；第三区域123的光学调整层12a的厚度可以为d3，对于第三波长λ3的光的折射率可以为n3。则：
2*n1*d1＝P1*λ1，P1为任意正整数；
2*n2*d2＝Q1*λ2，Q1为任意正整数；
2*n3*d3＝M1*λ3，M1为任意正整数。
满足上述条件的第一区域121、第二区域122、第三区域123在出光界面的反射较少，形成了微谐振腔，同时提高了对应第一波长λ1、第二波长λ2、第三波长λ3的出光率。因而，可以降低功耗，提高显示面板的寿命。
需要说明的是，对于采用打印法形成有机发光材料的发光结构11，若由于打印量未精确控制导致发光结构11的出光率降低，本方案可显著提高对应第一波长λ1、第二波长λ2、第三波长λ3的出光率。
其它实施例中，盖板层12还可以包括位于第一发光结构111上的第一区域121，位于第二发光结构112上的第二区域122，以及位于第三发光结构113上的第三区域123中的两个。例如，盖板层12包括第一区域121与第二区域122时，满足上述条件的第一区域121与第二区域122在出光界面的反射较少，形成了微谐振腔，可同时提高对应第一波长λ1与第二波长λ2的出光率。
光学调整层12a的具体材料为氮化硅、二氧化硅、氮氧化硅、IZO(氧化铟锌)、ITO(氧化铟锡)、高分子树脂或PI(聚酰亚胺)。
各区域的光学调整层12a可通过图形化工艺选择不同材料和/或厚度。
此外，光学调整层12a在可见光波长范围内的消光系数优选较小，以避免自身对波的较强吸收，提高出光率。光学调整层12a在可见光波长范围内的消光系数优选不大于0.05。可见光波长范围为：380nm～780nm。
图2是本发明第二实施例的顶发光显示面板的截面结构示意图。
参照图2所示，本实施例的顶发光显示面板2与图1中的顶发光显示面板1大致相同，区别仅在于：盖板层12'包括光学调整层12a与平坦化层12b。
第一区域121的光学调整层12a的厚度可以为d1，对于第一波长λ1的光的折射率可以为n1；第二区域122的光学调整层12a的厚度可以为d2，对于第一波长λ2的光的折射率可以为n2；第三区域123的光学调整层12a的厚度可以为d3，对于第三波长λ3的光的折射率可以为n3；第一区域121的平坦化层12b的厚度可以为D1，对于第一波长λ1的光的折射率可以为N1；第二区域122的平坦化层12b的厚度可以为D2，对于第一波长λ2的光的折射率可以为N2；第三区域123的平坦化层12b的厚度可以为D3，对于第三波长λ3的光的折射率可以为N3。其中，N1<n1，N2<n2，N2<n2，以在出光方向的界面形成全反射。
则：
2*(n1*d1+N1*D1)＝P2*λ1，P2为任意正整数；
2*(n2*d2+N2*D2)＝Q2*λ2，Q2为任意正整数；
2*(n3*d3+N3*D3)＝M2*λ3，M2为任意正整数。
满足上述条件的第一区域121、第二区域122、第三区域123在出光界面的反射较少，形成了微谐振腔，同时提高了对应第一波长λ1、第二波长λ2、第三波长λ3的出光率。因而，可以降低功耗，提高显示面板的寿命。
其它实施例中，盖板层12'还可以包括位于第一发光结构111上的第一区域121，位于第二发光结构112上的第二区域122，以及位于第三发光结构113上的第三区域123中的两个。例如，盖板层12'包括第一区域121与第二区域122时，满足上述条件的第一区域121与第二区域122在出光界面的反射较少，形成了微谐振腔，可同时提高对应第一波长λ1与第二波长λ2的出光率。
为验证上述技术效果，本实施例进行了光学模拟。通过光学模拟，可以得出：盖板层12'的各区域在符合单光程等于对应半波长整数倍时，可提高各个发光结构的出光率。此外，光学调整层12a和平坦化层12b共同影响出光率。第三，光学调整层12a的各参数对出光率的影响程度大于平坦化层12b的各参数对出光率的影响程度。
光学调整层12a的具体材料为氮化硅、二氧化硅、氮氧化硅、IZO、ITO、高分子树 脂或PI；平坦化层12b的具体材料可以为PI或SOG(有机硅氧烷树脂)。
此外，平坦化层12b在可见光波长范围内的消光系数优选较小，以避免自身对波的较强吸收，提高出光率。平坦化层12b在可见光波长范围内的消光系数可以为0～0.1。本实施例中，数值范围均包括端点值。
其它实施例中，盖板层12'还可以包括仅包括平坦化层12b。第一区域121、第二区域122、第三区域123中的至少两个满足上述谐振腔条件即可。
图3是本发明第三实施例的顶发光显示面板的截面结构示意图。
参照图3所示，本实施例的顶发光显示面板3与图1、图2中的顶发光显示面板1、2大致相同，区别仅在于：盖板层12与发光结构11之间具有滤色层13。
滤色层13可以包括第一滤色块131、第二滤色块132以及第三滤色块133。第一滤色块131允许第一发光结构111的第一波长λ1的波通过；第二滤色块132允许第二发光结构112的第二波长λ2的波通过；第三滤色块133允许第三发光结构113的第三波长λ3的波通过。
本实施例中，第一滤色块131为红色滤色块，第二滤色块132为绿色滤色块，第三滤色块133为蓝色滤色块。
相邻滤色块之间具有遮光结构14，例如为黑矩阵。
各区域的光学调整层12a在通过图形化工艺选择不同材料和/或厚度时，相邻区域的光学调整层12a通常存在搭接处。遮光结构14对应于搭接处，可对搭接处进行遮光。
滤色层13可提高对应第一波长λ1、第二波长λ2、第三波长λ3的出光单色性。
基于上述顶发光显示面板1、2、3，本发明一实施例还提供一种包括上述任一顶发光显示面板1、2、3的显示装置。显示装置可以为：电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间唯一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。
在本发明中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。术语“若干”指一个、两个或两个以上，除非另有明确的限定。
本领域技术人员在考虑说明书及实践这里公开的公开后，将容易想到本发明的其它实施方案。本发明旨在涵盖本发明的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本发明的一般性原理并包括本发明未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本发明的真正范围和精神由下面的权利要求指出。
应当理解的是，本发明并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本发明的范围仅由所附的权利要求来限制。

Claims (11)

  1. 一种顶发光显示面板，其特征在于，包括：
    基底；
    位于所述基底上的发光结构，所述发光结构包括：第一发光结构，第二发光结构以及第三发光结构，所述第一发光结构的发光波长为第一波长，所述第二发光结构的发光波长为第二波长，所述第三发光结构的发光波长为第三波长，所述第一波长大于所述第二波长，所述第二波长大于所述第三波长；
    盖板层，位于所述发光结构远离所述基底的一侧；所述盖板层至少包括位于所述第一发光结构上的第一区域，位于所述第二发光结构上的第二区域，以及位于所述第三发光结构上的第三区域中的两个，所述第一区域在厚度方向的等效光程的两倍为所述第一波长的整数倍，所述第二区域在厚度方向的等效光程的两倍为所述第二波长的整数倍，所述第三区域在厚度方向的等效光程的两倍为所述第三波长的整数倍。
  2. 根据权利要求1所述的顶发光显示面板，其特征在于，所述盖板层包括位于所述第一发光结构上的第一区域，位于所述第二发光结构上的第二区域，以及位于所述第三发光结构上的第三区域。
  3. 根据权利要求1或2所述的顶发光显示面板，其特征在于，所述盖板层包括光学调整层和/或平坦化层。
  4. 根据权利要求3所述的顶发光显示面板，其特征在于，所述光学调整层的材料为氮化硅、二氧化硅、氮氧化硅、IZO、ITO、高分子树脂或PI。
  5. 根据权利要求3所述的顶发光显示面板，其特征在于，所述平坦化层的材料为PI或SOG。
  6. 根据权利要求3所述的顶发光显示面板，其特征在于，所述光学调整层在可见光波长范围内的消光系数不大于0.05。
  7. 根据权利要求3所述的顶发光显示面板，其特征在于，所述平坦化层在可见光波长范围内的消光系数为0～0.1。
  8. 根据权利要求1或2所述的顶发光显示面板，其特征在于，所述第一发光结构为红光发光结构，所述第二发光结构为绿光发光结构，所述第三发光结构为蓝光发光结构。
  9. 根据权利要求8所述的顶发光显示面板，其特征在于，所述红光发光结构的红光有机层，和/或所述绿光发光结构的绿光有机层，和/或所述蓝光发光结构的蓝光有机层采用打印法或蒸镀法形成。
  10. 根据权利要求1或2所述的顶发光显示面板，其特征在于，所述盖板层与所述发光结构之间具有滤色层。
  11. 一种显示装置，其特征在于，包括：权利要求1至10任一项所述的顶发光显示面板。
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