WO2022225314A1 - Sip 모듈 - Google Patents
Sip 모듈 Download PDFInfo
- Publication number
- WO2022225314A1 WO2022225314A1 PCT/KR2022/005628 KR2022005628W WO2022225314A1 WO 2022225314 A1 WO2022225314 A1 WO 2022225314A1 KR 2022005628 W KR2022005628 W KR 2022005628W WO 2022225314 A1 WO2022225314 A1 WO 2022225314A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- image sensor
- serializer
- disposed
- layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 230000017525 heat dissipation Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000011664 signaling Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 29
- 238000005516 engineering process Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
Definitions
- the present invention relates to a SiP module, and more particularly, to a technology in which a serializer is embedded in a SiP module substrate.
- the present invention relates to a SiP module, and more particularly, to a technology in which a serializer is embedded in a SiP module substrate.
- the technical problem to be solved by the present invention is to provide a system in package (SiP) module capable of simplifying an interface by modularizing an image sensor and a serializer that have been previously separated.
- SiP system in package
- the SiP module includes a substrate; an image sensor disposed on one surface of the substrate; and a serializer embedded in the substrate, wherein the substrate may include a via hole passing through the substrate to electrically connect the image sensor and the serializer.
- It may include a resistor embedded in the substrate.
- the serializer may be disposed to overlap the heat dissipation pad in an optical axis direction.
- the substrate includes a first layer in which the image sensor is disposed, a second layer in which the serializer is embedded, and a third layer in which the heat dissipation pad is disposed, and the second layer includes the first layer and the third layer. can be placed between them.
- An adhesive member may be applied to one surface and the other surface of the second layer.
- the serializer may be any one of low voltage differential signaling (LVDS), V By One HS, HD Base T, and MIPI A-PHY chipsets.
- LVDS low voltage differential signaling
- V By One HS V By One HS
- HD Base T HD Base T
- MIPI A-PHY chipsets MIPI A-PHY chipsets
- the image sensor may be one image sensor among a plurality of types of image sensors, and a pin may be formed on one surface of the substrate at a position corresponding to a connection terminal configured as a single pin map.
- the camera module includes a first substrate; an image sensor disposed on one surface of the first substrate; a serializer embedded in the first substrate; and a second substrate on which the first substrate is disposed on one surface, wherein the first substrate may include a via hole passing through the first substrate to electrically connect the image sensor and the serializer.
- a power block and a connector may be disposed on the other surface of the second board.
- the camera internal structure can be designed smaller than before, and price competitiveness can be secured by easing the board specification and removing the flexible board.
- the type of image sensor is different, it can be connected to the SiP module substrate composed of the same pinmap, making it possible to make the SiP module a platform.
- the effect according to the present invention is not limited by the contents exemplified above, and more various effects are included in the present specification.
- FIG. 1 illustrates an internal substrate of a conventional vehicle camera.
- FIG. 2 is a block diagram of a camera internal interface according to the present embodiment.
- SiP module 3 to 5 show a SiP module according to the present embodiment.
- a component when it is described that a component is 'connected', 'coupled', or 'connected' to another component, the component is directly 'connected', 'coupled', or 'connected' to the other component. In addition to the case, it may include a case of 'connected', 'coupled', or 'connected' by another element between the element and the other element.
- a serializer for high-speed transmission of a video signal is included because a physical distance between a location where a camera is attached and a host is large.
- a conventional camera module internal substrate structure will be described with reference to FIG. 1 .
- the image sensor 4 is disposed on the upper surface of the upper substrate 1
- the power block 5 is disposed on the lower surface
- the serializer 6 is arranged on the upper surface of the lower substrate 2
- the connector 7 is arranged on the lower surface of the lower substrate 2 .
- additional electronic components in addition to the above components may be disposed on the upper substrate 1 and the lower substrate 2 . This is illustrative, and not particularly limited thereto.
- the upper substrate 1 and the lower substrate 2 may be connected by a flexible substrate 3 . Since the image sensor 4 and the serializer 6 have many signal connections, and the image signal received from the image sensor 4 needs to be transmitted to the serializer 6 at high speed, the image sensor 4 disposed on different boards. and the serializer 6 are electrically connected through the flexible substrate 3 .
- FIGS. 2 to 5 are block diagram of a camera internal interface according to the present embodiment.
- 3 to 5 show a SiP module according to the present embodiment.
- the SiP module substrate according to the present embodiment may include a substrate 120 and a serializer 130 , and the SiP module according to the present embodiment has an image sensor 110 , a substrate 120 , and a serializer 130 .
- the substrate 120 may be a printed circuit board (PCB).
- the substrate 120 may be formed as a single layer.
- the substrate 120 may be formed of a plurality of layers.
- An embedded serializer 130 may be included in the substrate 120 .
- the "embedded technology" used in the present invention refers to a technology for inserting electronic components into the substrate. .
- the size of the substrate 120 can be reduced, and the length of the connection between other active and passive elements mounted inside the substrate 120 is shortened, thereby reducing the inductance component. It is possible to improve electrical performance according to the reduction of
- the serializer 130 may be embedded in the board 120 and electrically connected to the image sensor 110 .
- a via hole (not shown) may be formed in the substrate 120 to electrically connect the image sensor 110 and the serializer 130 .
- the serializer 130 may be disposed to be embedded in the substrate 120 formed as a single layer.
- the serializer 130 may be disposed between the plurality of layers.
- the substrate 120 may include the first to third layers 121 , 122 , and 123 , and the number of layers may be increased or decreased according to the number of mounted components, and is not particularly limited thereto.
- the image sensor 110 may be disposed on the upper surface of the first layer 121 which is the top layer of the substrate 120 .
- a heat dissipation pad 150 may be disposed on a lower surface of the third layer 122 that is a bottom (BOT) layer of the substrate 120 .
- the serializer 130 may be disposed on the second layer 123 positioned between the first layer 121 and the third layer 122 .
- a plurality of electronic devices may be disposed on the upper surface of the first layer 121 or the lower surface of the third layer 122 .
- An adhesive member may be applied to one surface of the layer on which the serializer 130 is disposed among the plurality of layers of the substrate 120 .
- the adhesive member may be epoxy. This is to prevent thermal expansion from occurring by zeroing air in the layer of the substrate 120 on which the serializer 130 is embedded.
- a layer on which the serializer 130 is disposed among the plurality of layers of the substrate 120 may be molded and the serializer 130 may be embedded therein.
- a serializer also called a serializer, is a component that converts various parallel signals into serial signals. Specifically, the serializer receives parallel data from a large number of pins, converts it into serial data, and outputs it through a small number of pins, thereby allowing one pin to perform various roles, thereby reducing the overall number of pins.
- the serializer 130 may be any one of low voltage differential signaling (LVDS), V By One HS, HD Base T, and MIPI A-PHY chipsets.
- the serializer 130 may be any one of various communication interfaces.
- the serializer 130 may be in the form of a chip.
- the serializer 130 may be in the form of an element.
- the serializer 130 may be in the form of an electronic component.
- MIPI Mobile Industry Processor Interface
- MIPI A-PHY can be used for high-speed data transmission between a camera, a display, and a related domain ECU (electronic control unit).
- MIPI A-PHY has high stability with low error rate, has high resilience due to ultra-high level of immunity even in an automotive environment, can be used in long-distance communication range, and can improve data rate.
- the RGB-IR Sensor which is the image sensor 110
- the MIPI A-PHY which is a type of the serializer 130
- the image sensor and the serializer are disposed on separate boards, a flexible board for connecting the respective boards is required. was embedded, and the image sensor and serializer were electrically connected to make it modular.
- a resistor 140 embedded in the substrate 120 may be included.
- the resistor 140 may be connected to electronic components disposed inside the substrate 120 .
- Electronic components mounted inside or on the surface of the substrate 120 may be connected to the resistor 140 embedded in the substrate 120 to perform termination within the substrate 120 . Through this, it is possible to simplify the inside of the substrate 120 without the need to connect the electronic components to the outside.
- the resistor 140 may be disposed adjacent to the serializer 130 embedded in the substrate 120 .
- the resistor 140 may include a plurality of resistors.
- the resistor 140 may be embedded in the layer in which the serializer 130 is embedded.
- the resistor 140 may be embedded in a layer in which the serializer 130 is not embedded.
- An image sensor 110 may be disposed on the upper surface of the substrate 120 .
- the image sensor 110 may be electrically connected to the substrate 120 .
- the image sensor 110 may be electrically connected to the serializer 130 embedded in the board 120 .
- the image sensor may be coupled to the substrate 120 by a surface mount technique.
- the image sensor may be coupled to the substrate 120 by flip chip technology.
- the image sensor 110 may be any one of a charge coupled device (CCD), a complementary metal oxide semiconductor (CMOS), a CPD, and a CID.
- CCD charge coupled device
- CMOS complementary metal oxide semiconductor
- CPD CPD
- CID C-Dielectric Deformation
- a horizontal and/or vertical length of a unit pixel of the image sensor 110 may be 2 ⁇ m (micrometer) or less.
- the present invention is not particularly limited thereto, and as the number of pixels increases, the overall size of the image sensor 110 may increase. Through this, it can be applied to a camera module with a high number of pixels and/or pixels.
- the image sensor 110 may be coupled to the substrate 120 by flip chip technology.
- Flip-chip technology is a method of wireless bonding, which is one of device mounting technologies. When attaching a chip to a substrate, it does not use an additional connection structure such as a metal lead (wire) or an intermediate medium such as a ball grid array (BGA). It is a technology that fuses as it is using lead bumps that become electrodes on the bottom side. This technology has the effect that the package is the same size as the chip, which is advantageous for miniaturization and weight reduction, has excellent thermal stability, high current application rate, and can also increase reaction speed, and has the effect of making the distance between electrodes much smaller.
- a bump 160 is formed on the lower surface of the image sensor 110 , and it can be fused to the substrate 120 .
- the bump 160 may be press-bonded or thermocompression-bonded to the substrate 120 .
- an adhesive member 170 may be additionally applied between the image sensor 110 and the upper surface of the substrate 120 .
- An underfill may be applied between the image sensor 110 and the upper surface of the substrate 120 .
- a predetermined space formed between the image sensor 110 and the substrate 120 may be filled by the bump 160 of the image sensor 110 , and the mounting reliability of the image sensor 110 may be enhanced.
- the substrate 120 may include at least one via hole penetrating the substrate 120 .
- the serializer 130 may be electrically connected to the image sensor 110 disposed on the substrate 120 through a via hole.
- the resistor 140 and the electronic components may be electrically connected to each other through a via hole.
- the image sensor 110 may be one image sensor among a plurality of types of image sensors.
- the type and size of the image sensor 110 may vary according to the number of pixels. In general, the larger the area of the image sensor, the clearer the image can be obtained.
- a pin may be formed on one surface of the substrate 120 at a position corresponding to a connection terminal configured as a single pin map. It is possible to replace and combine different image sensors with a connection terminal composed of a single pin map, and there is no need to separately manufacture a SiP module substrate for each type of image sensor.
- the SiP module for each pixel of the image sensor can be configured with the same size and the same pinmap, so that the substrate of the camera module can be platformed.
- a heat dissipation pad 150 may be disposed on the other surface of the substrate 120 .
- the heat dissipation pad 150 may be a thermal conductive tape (thermal pad).
- the heat dissipation pad 150 has high thermal conductivity to reduce heat generated inside the camera.
- the heat dissipation pad 150 may be in the form of a tape.
- the heat dissipation pad 150 may be in the form of a double-sided tape.
- the serializer 130 may be disposed to overlap the heat dissipation pad 150 in the optical axis direction.
- the serializer 130 may be disposed to overlap the heat dissipation pad 150 in a direction perpendicular to the optical axis. Through this, heat emitted from the serializer 130 may be more effectively discharged.
- the SiP module according to this embodiment includes an image sensor 110 , a first substrate 120 , and a serializer 130
- the camera module according to this embodiment includes an image sensor 110 and a first substrate 120 . , a serializer 130 , and a second substrate 210 .
- a detailed description of the camera module of the present invention corresponds to the detailed description of each configuration with reference to FIGS. 2 to 3 , and thus redundant descriptions will be omitted.
- One surface of the second substrate 210 may be disposed on the first substrate 120 of the SiP module, and the power block 230 and the connector 220 may be disposed on the other surface of the second substrate 210 .
- the first substrate 120 may be coupled to the upper surface of the second substrate 210 by the heat dissipation pad 150 disposed on the lower surface of the first substrate 120 . This is illustrative, and not particularly limited thereto.
- the power block 230 may be coupled to the second substrate 210 .
- the power block 230 may be a converter.
- the power block 230 may convert a level of power received from an external device (not shown) into a level of power required by the board, and output power having the converted level to each electronic component.
- the power block 230 may include at least one of a DC-DC converter (not shown) and a low voltage drop out (LDO) regulator (not shown).
- the connector 220 may be coupled to the second board 210 .
- the connector 220 may be electrically connected to the second board 210 .
- the connector 220 may supply external power into the camera device.
- the connector 220 may include a port for electrically connecting to an external device.
- a cross-section of the connector 220 may be formed in a circular shape. Alternatively, the cross-section of the connector 220 may be variously changed to an oval or rectangular shape.
- the camera internal structure can be designed smaller than before, and price competitiveness can be secured by easing the board specification and removing the flexible board.
- the image sensor and serializer are made into SiP modules, a separate image sensor reinforcement process is not required in the final camera assembly process, thereby simplifying the overall assembly process.
- the type of image sensor is different, it can be connected to the SiP module substrate composed of the same pinmap, making it possible to make the SiP module a platform.
Abstract
Description
Claims (10)
- 기판;상기 기판 일면에 배치되는 이미지 센서; 및상기 기판 내부에 임베디드되는 시리얼라이저를 포함하고,상기 기판은 상기 이미지 센서와 상기 시리얼라이저를 전기적으로 연결하기 위해 상기 기판을 관통하는 비아홀을 포함하는 SiP 모듈.
- 제1항에 있어서,상기 기판 내부에 임베디드되는 저항을 포함하는 SiP 모듈.
- 제1항에 있어서,상기 기판의 타면에 배치되는 방열패드를 포함하고,상기 시리얼라이저는 상기 방열패드와 광축 방향으로 오버랩되도록 배치되는 SiP 모듈.
- 제3항에 있어서,상기 기판은 상기 이미지 센서가 배치되는 제1 층, 상기 시리얼라이저가 임베디드 되는 제2 층 및 상기 방열패드가 배치되는 제3 층을 포함하고,상기 제2 층은 상기 제1 층과 상기 제3 층 사이에 배치되는 SiP 모듈.
- 제4항에 있어서,상기 제2 층의 일면 및 타면에 접착부재가 도포되는 SiP 모듈.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 시리얼라이저는 LVDS(Low voltage differential signaling), V By One HS, HD Base T, MIPI A-PHY 칩셋 중 어느 하나인 SiP 모듈.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 이미지 센서는,복수의 종류의 이미지 센서 중 하나의 이미지 센서이고, 상기 기판의 일면에 하나의 핀맵으로 구성되는 연결단자에 대응하는 위치에 핀이 형성되는 SiP 모듈.
- 제1 기판;상기 제1 기판 일면에 배치되는 이미지 센서;상기 제1 기판 내부에 임베디드되는 시리얼라이저; 및상기 제1 기판이 일면에 배치되는 제2 기판을 포함하고,상기 제1 기판은 상기 이미지 센서와 상기 시리얼라이저를 전기적으로 연결하기 위해 상기 제1 기판을 관통하는 비아홀을 포함하는 카메라 모듈.
- 제8항에 있어서,상기 제2 기판의 타면에는 전원블록 및 커넥터가 배치되는 카메라 모듈.
- 제8항 또는 제9항에 있어서,상기 이미지 센서는,복수의 종류의 이미지 센서 중 하나의 이미지 센서이고, 상기 기판의 일면에 하나의 핀맵으로 구성되는 연결단자에 대응하는 위치에 핀이 형성되는 카메라 모듈.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN202280029961.8A CN117203767A (zh) | 2021-04-21 | 2022-04-19 | SiP模块 |
JP2023564142A JP2024515681A (ja) | 2021-04-21 | 2022-04-19 | SiPモジュール |
EP22792014.7A EP4328972A1 (en) | 2021-04-21 | 2022-04-19 | Sip module |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2021-0051972 | 2021-04-21 | ||
KR1020210051972A KR20220145201A (ko) | 2021-04-21 | 2021-04-21 | SiP 모듈 |
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Publication Number | Publication Date |
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WO2022225314A1 true WO2022225314A1 (ko) | 2022-10-27 |
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PCT/KR2022/005628 WO2022225314A1 (ko) | 2021-04-21 | 2022-04-19 | Sip 모듈 |
Country Status (5)
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EP (1) | EP4328972A1 (ko) |
JP (1) | JP2024515681A (ko) |
KR (1) | KR20220145201A (ko) |
CN (1) | CN117203767A (ko) |
WO (1) | WO2022225314A1 (ko) |
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KR20110068796A (ko) * | 2009-12-16 | 2011-06-22 | 삼성전자주식회사 | 이미지 센서 모듈, 이의 제조 방법, 및 이를 포함하는 이미지 처리 시스템 |
KR20120031817A (ko) * | 2010-09-27 | 2012-04-04 | 하나 마이크론(주) | 반도체 칩 내장 기판 및 이를 포함하는 적층 반도체 패키지 |
KR101602706B1 (ko) * | 2014-09-18 | 2016-03-14 | 재단법인 다차원 스마트 아이티 융합시스템 연구단 | 방열 금속이 부착된 임베디드 기판 및 그 제작 방법 |
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2021
- 2021-04-21 KR KR1020210051972A patent/KR20220145201A/ko active Search and Examination
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2022
- 2022-04-19 JP JP2023564142A patent/JP2024515681A/ja active Pending
- 2022-04-19 CN CN202280029961.8A patent/CN117203767A/zh active Pending
- 2022-04-19 WO PCT/KR2022/005628 patent/WO2022225314A1/ko active Application Filing
- 2022-04-19 EP EP22792014.7A patent/EP4328972A1/en active Pending
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JP2008305937A (ja) * | 2007-06-07 | 2008-12-18 | Panasonic Corp | 電子部品内蔵モジュールおよびその製造方法 |
JP2010093214A (ja) * | 2008-10-10 | 2010-04-22 | Sony Corp | 固体撮像素子、撮像装置及び画像信号処理システム |
KR20110068796A (ko) * | 2009-12-16 | 2011-06-22 | 삼성전자주식회사 | 이미지 센서 모듈, 이의 제조 방법, 및 이를 포함하는 이미지 처리 시스템 |
KR20120031817A (ko) * | 2010-09-27 | 2012-04-04 | 하나 마이크론(주) | 반도체 칩 내장 기판 및 이를 포함하는 적층 반도체 패키지 |
KR101602706B1 (ko) * | 2014-09-18 | 2016-03-14 | 재단법인 다차원 스마트 아이티 융합시스템 연구단 | 방열 금속이 부착된 임베디드 기판 및 그 제작 방법 |
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CN117203767A (zh) | 2023-12-08 |
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KR20220145201A (ko) | 2022-10-28 |
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