WO2022220456A1 - 태양 전지 및 그 제조 방법 - Google Patents
태양 전지 및 그 제조 방법 Download PDFInfo
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- WO2022220456A1 WO2022220456A1 PCT/KR2022/004772 KR2022004772W WO2022220456A1 WO 2022220456 A1 WO2022220456 A1 WO 2022220456A1 KR 2022004772 W KR2022004772 W KR 2022004772W WO 2022220456 A1 WO2022220456 A1 WO 2022220456A1
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- Prior art keywords
- layer
- transparent electrode
- pattern
- electrode layer
- indium
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 135
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000005137 deposition process Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 190
- 239000000463 material Substances 0.000 claims description 111
- 229910052738 indium Inorganic materials 0.000 claims description 92
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 92
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 69
- 229910052760 oxygen Inorganic materials 0.000 claims description 69
- 239000001301 oxygen Substances 0.000 claims description 69
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 31
- 238000010924 continuous production Methods 0.000 claims description 31
- 230000031700 light absorption Effects 0.000 claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 80
- 238000000231 atomic layer deposition Methods 0.000 description 76
- 238000005240 physical vapour deposition Methods 0.000 description 76
- 238000000427 thin-film deposition Methods 0.000 description 42
- 239000002019 doping agent Substances 0.000 description 19
- 229910006404 SnO 2 Inorganic materials 0.000 description 17
- 239000010408 film Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- QYHNIMDZIYANJH-UHFFFAOYSA-N diindium Chemical compound [In]#[In] QYHNIMDZIYANJH-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- -1 polypinol Polymers 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KWVPRPSXBZNOHS-UHFFFAOYSA-N 2,4,6-Trimethylaniline Chemical compound CC1=CC(C)=C(N)C(C)=C1 KWVPRPSXBZNOHS-UHFFFAOYSA-N 0.000 description 1
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Definitions
- the first pattern layer and the third transparent electrode layer are in contact with each other, the content of indium in the first pattern layer is greater than the content of indium in the third transparent electrode layer, and the content of oxygen in the first pattern layer is the third transparent It may be less than the oxygen content of the electrode layer.
- the first metal layer 413 may be formed on one surface, for example, an upper surface of the first seed layer 412 .
- the perovskite solar cell 500 includes conductive charge transfer layers 520 and 530 and a light absorption layer 510 .
- a first semiconductor layer 210 is formed on one surface, for example, an upper surface of a semiconductor substrate 100
- a second semiconductor layer 210 is formed on one surface, for example, an upper surface of the first semiconductor layer 210 .
- a layer 220 is formed.
- the second semiconductor layer 220 is a semiconductor layer doped with an n-type dopant, for example, through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). It may be formed of an amorphous silicon layer doped with a dopant.
- CVD chemical vapor deposition
- ALD atomic layer deposition
- PVD physical vapor deposition
- the first pattern layer 411 is formed of a transparent oxide film containing at least one of indium and tin by using chemical vapor deposition (CVD) using a shadow mask, atomic layer deposition (ALD), or physical vapor deposition (PVD). can do.
- CVD chemical vapor deposition
- ALD atomic layer deposition
- PVD physical vapor deposition
- the first seed layer 412 may be formed by a continuous process using a shadow mask in the same process equipment as the first pattern layer 411 .
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Abstract
Description
Claims (20)
- 반도체 기판;상기 반도체 기판의 일면 상에 구비된 제1 투명 전극층; 및상기 제1 투명 전극층의 일면 상에 구비된 제1 전극을 포함하고,상기 제1 전극은 쉐도우 마스크를 이용한 증착 공정으로 패턴 형성된 제1 패턴층을 포함하여 이루어진 태양 전지.
- 제1항에 있어서,상기 제1 투명 전극층 및 상기 제1 패턴층은 각각 인듐(In) 및 주석(Sn) 중 적어도 하나를 포함하는 투명 산화물을 포함하여 이루어진 태양 전지.
- 제2항에 있어서,상기 제1 패턴층과 상기 제1 투명 전극층은 서로 접하고, 상기 제1 패턴층의 인듐의 함량이 상기 제1 투명 전극층의 인듐의 함량보다 많은 태양 전지.
- 제2항에 있어서,상기 제1 패턴층과 상기 제1 투명 전극층은 서로 접하고, 상기 제1 패턴층의 산소의 함량이 상기 제1 투명 전극층의 산소의 함량보다 적은 태양 전지.
- 제1항에 있어서,상기 제1 전극은 상기 제1 패턴층 상에 구비된 제1 시드층 및 상기 제1 시드층 상에 구비된 제1 금속층을 추가로 포함하여 이루어지고,상기 제1 시드층은 쉐도우 마스크를 이용한 증착 공정으로 패턴 형성되고, 상기 제1 금속층은 선택적 증착(selective deposition) 공정으로 패턴 형성된 태양 전지.
- 제5항에 있어서,상기 제1 패턴층, 상기 제1 시드층 및 상기 제1 금속층은 서로 동일한 패턴으로 이루어진 태양 전지.
- 제1항에 있어서,상기 반도체 기판과 상기 제1 투명 전극층 사이에 제1 반도체층 및 제2 반도체층이 추가로 구비되어 있고,상기 제1 반도체층은 진성 비정질 실리콘층으로 이루어지고,상기 제2 반도체층은 n형 비정질 실리콘층으로 이루어진 태양 전지.
- 제1항에 있어서,상기 제1 투명 전극층과 상기 제1 패턴층 사이에 구비된 페로브 스카이트 태양 전지를 추가로 포함하고,상기 페로브 스카이트 태양 전지는 제1 도전성 전하 전달층, 상기 제1 도전성 전하 전달층 상에 구비된 광흡수층, 및 상기 광흡수층 상에 구비된 제2 도전성 전하 전달층을 포함하여 이루어진 태양 전지.
- 제8항에 있어서,상기 제2 도전성 전하 전달층과 상기 제1 패턴층 사이에 제3 투명 전극층이 추가로 포함되고,상기 제3 투명 전극층은 인듐(In) 및 주석(Sn) 중 적어도 하나를 포함하는 투명 산화물을 포함하여 이루어지고,상기 제3 투명 전극층과 상기 제1 패턴층은 서로 접하고, 상기 제1 패턴층의 인듐의 함량이 상기 제3 투명 전극층의 인듐의 함량보다 많고, 상기 제1 패턴층의 산소의 함량이 상기 제3 투명 전극층의 산소의 함량보다 적은 태양 전지.
- 제1 도전성 전하 전달층, 상기 제1 도전성 전하 전달층 상에 구비된 광흡수층, 및 상기 광흡수층 상에 구비된 제2 도전성 전하 전달층을 포함하여 이루어진 페로브 스카이트 태양 전지; 및상기 제2 도전성 전하 전달층의 일면 상에 구비된 제1 전극을 포함하여 이루어지고,상기 제1 전극은 쉐도우 마스크를 이용한 증착 공정으로 패턴 형성된 제1 패턴층을 포함하여 이루어진 태양 전지.
- 제10항에 있어서,상기 제2 도전성 전하 전달층과 상기 제1 패턴층 사이에 제3 투명 전극층이 추가로 포함되고,상기 제3 투명 전극층 및 상기 제1 패턴층은 각각 인듐(In) 및 주석(Sn) 중 적어도 하나를 포함하는 투명 산화물을 포함하여 이루어진 태양 전지.
- 제11항에 있어서,상기 제1 패턴층과 상기 제3 투명 전극층은 서로 접하고, 상기 제1 패턴층의 인듐의 함량이 상기 제3 투명 전극층의 인듐의 함량보다 많고, 제1 패턴층의 산소의 함량이 상기 제3 투명 전극층의 산소의 함량보다 적은 태양 전지.
- 반도체 기판의 일면 상에 제1 투명 전극층을 형성하는 단계; 및상기 제1 투명 전극층의 일면 상에 제1 전극을 형성하는 단계를 포함하고,상기 제1 전극을 형성하는 단계는 쉐도우 마스크를 이용한 증착 공정으로 제1 패턴층을 형성하는 공정을 포함하여 이루어지고,상기 제1 투명 전극층 및 상기 제1 패턴층은 동일한 공정 장비 내에서 연속 공정으로 형성하는 태양 전지의 제조 방법.
- 제13항에 있어서,상기 제1 투명 전극층 및 상기 제1 패턴층은 각각 인듐(In) 및 주석(Sn) 중 적어도 하나를 포함하는 투명 산화물을 포함하여 이루어진 태양 전지의 제조 방법.
- 제14항에 있어서,상기 제1 투명 전극층 및 상기 제1 패턴층을 동일한 공정 장비 내에서 연속 공정으로 형성하는 공정은,동일한 챔버 내에서 Sn을 포함하는 재료, 산소를 포함하는 재료 및 인듐을 포함하는 재료를 투입하여 상기 제1 투명 전극층을 형성하고, 이어서 상기 Sn을 포함하는 재료, 상기 산소(O)를 포함하는 재료 및 상기 인듐을 포함하는 재료를 투입하면서 상기 쉐도우 마스크를 이용하여 상기 제1 패턴층을 형성하는 공정을 포함하여 이루어진 태양 전지의 제조 방법.
- 제15항에 있어서,상기 제1 패턴층의 형성 공정시의 전체 재료의 투입량에 대한 상기 인듐을 포함하는 재료의 투입량 비율은 상기 제1 투명 전극층의 형성 공정시의 전체 재료의 투입량에 대한 상기 인듐을 포함하는 재료의 투입량 비율보다 크고,상기 제1 패턴층의 형성 공정시의 전체 재료의 투입량에 대한 상기 산소를 포함하는 재료의 투입량 비율은 상기 제1 투명 전극층의 형성 공정시의 전체 재료의 투입량에 대한 상기 산소를 포함하는 재료의 투입량 비율보다 작은 태양 전지의 제조 방법.
- 제14항에 있어서,상기 제1 투명 전극층 및 상기 제1 패턴층을 동일한 공정 장비 내에서 연속 공정으로 형성하는 공정은,동일한 챔버 내에서 Sn을 포함하는 재료 및 산소를 포함하는 재료를 투입하여 상기 제1 투명 전극층을 형성하고, 이어서 상기 Sn을 포함하는 재료, 상기 산소(O)를 포함하는 재료 및 인듐을 포함하는 재료를 투입하면서 상기 쉐도우 마스크를 이용하여 상기 제1 패턴층을 형성하는 공정을 포함하여 이루어진 태양 전지의 제조 방법.
- 반도체 기판의 일면 상에 제1 도전성 전하 전달층, 상기 제1 도전성 전하 전달층 상에 구비된 광흡수층, 및 상기 광흡수층 상에 구비된 제2 도전성 전하 전달층을 포함하여 이루어진 페로브 스카이트 태양 전지를 형성하는 단계;상기 제2 도전성 전하 전달층의 일면 상에 제3 투명 전극층을 형성하는 단계; 및상기 제3 투명 전극층의 일면 상에 제1 전극을 형성하는 단계를 포함하고,상기 제1 전극을 형성하는 단계는 쉐도우 마스크를 이용한 증착 공정으로 제1 패턴층을 형성하는 공정을 포함하여 이루어지고,상기 제3 투명 전극층 및 상기 제1 패턴층은 동일한 공정 장비 내에서 연속 공정으로 형성하는 태양 전지의 제조 방법.
- 제18항에 있어서,상기 제3 투명 전극층 및 상기 제1 패턴층은 각각 인듐(In) 및 주석(Sn) 중 적어도 하나를 포함하는 투명 산화물을 포함하여 이루어진 태양 전지의 제조 방법.
- 제13항에 있어서,상기 제1 전극을 형성하는 단계는 상기 제1 패턴층 상에 제1 시드층을 형성하는 공정 및 상기 제1 시드층 상에 제1 금속층을 형성하는 공정을 추가로 포함하고,상기 제1 시드층은 쉐도우 마스크를 이용한 증착 공정으로 패턴 형성하고,상기 제1 금속층은 선택적 증착(selective deposition) 공정으로 패턴 형성하는 태양 전지의 제조 방법.
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JP2011070902A (ja) * | 2009-09-25 | 2011-04-07 | Brother Industries Ltd | 色素増感型太陽電池用電極、その製造方法、および色素増感型太陽電池用電極を備える色素増感型太陽電池 |
KR20120035756A (ko) * | 2010-10-06 | 2012-04-16 | 엘지이노텍 주식회사 | 태양 전지 |
KR20130022296A (ko) * | 2011-08-26 | 2013-03-06 | 주성엔지니어링(주) | 태양전지 및 그 제조방법 |
KR20140109840A (ko) * | 2014-07-21 | 2014-09-16 | (주)에이엠에스아이 | 선택적 증착 공정을 통한 태양전지의 금속 전극 배선 형성방법 |
KR20180063866A (ko) * | 2016-12-02 | 2018-06-12 | 엘지전자 주식회사 | 텐덤 태양전지 및 그 제조 방법 |
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JP2011070902A (ja) * | 2009-09-25 | 2011-04-07 | Brother Industries Ltd | 色素増感型太陽電池用電極、その製造方法、および色素増感型太陽電池用電極を備える色素増感型太陽電池 |
KR20120035756A (ko) * | 2010-10-06 | 2012-04-16 | 엘지이노텍 주식회사 | 태양 전지 |
KR20130022296A (ko) * | 2011-08-26 | 2013-03-06 | 주성엔지니어링(주) | 태양전지 및 그 제조방법 |
KR20140109840A (ko) * | 2014-07-21 | 2014-09-16 | (주)에이엠에스아이 | 선택적 증착 공정을 통한 태양전지의 금속 전극 배선 형성방법 |
KR20180063866A (ko) * | 2016-12-02 | 2018-06-12 | 엘지전자 주식회사 | 텐덤 태양전지 및 그 제조 방법 |
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