WO2022218126A1 - Dispositif de traitement thermique à semi-conducteur - Google Patents

Dispositif de traitement thermique à semi-conducteur Download PDF

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Publication number
WO2022218126A1
WO2022218126A1 PCT/CN2022/082963 CN2022082963W WO2022218126A1 WO 2022218126 A1 WO2022218126 A1 WO 2022218126A1 CN 2022082963 W CN2022082963 W CN 2022082963W WO 2022218126 A1 WO2022218126 A1 WO 2022218126A1
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WIPO (PCT)
Prior art keywords
process chamber
gas
exhaust
heat treatment
side wall
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PCT/CN2022/082963
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English (en)
Chinese (zh)
Inventor
杨慧萍
杨帅
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北京北方华创微电子装备有限公司
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Priority to KR1020237031885A priority Critical patent/KR20230144642A/ko
Publication of WO2022218126A1 publication Critical patent/WO2022218126A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Definitions

  • the present invention relates to the field of semiconductor manufacturing, in particular, to a semiconductor heat treatment equipment.
  • the existing oven includes a box body 1, and the box body 1 has an upper cavity, a storage cavity 11 and a lower cavity arranged in sequence from top to bottom, wherein the upper cavity and The lower cavity is communicated with the storage cavity 11 through a plurality of first air holes 111; the storage cavity 11 is provided with a riser 12 and four brackets 13 for carrying semiconductor devices.
  • the upper cavity and the lower cavity communicate with each other, and the riser 12 is provided with a plurality of second air holes 121 for connecting the inside of the riser 12 with the storage cavity 11 .
  • a mounting groove 17 for accommodating the mounting frame 18 , the blower 10 and the air passage structure 16 is provided on one side of the box body 1 .
  • the output port of the blower 10 communicates with the air channel structure 16 through the air outlet pipe 15 , and the air channel structure 16 communicates with the upper cavity and the lower cavity; the input port of the blower 10 is connected with the installation frame 18 .
  • several electric heating pipes 19 are installed inside the installation frame 18 .
  • the hot air heated by the electric heating pipe 19 enters the upper cavity and the lower cavity through the blower 10, the air outlet pipe 15 and the air passage structure 16 in sequence, and then passes through the plurality of first air holes 111 and the riser pipes 12 and their respective
  • the second air hole 121 on the upper part enters the storage cavity 11 , so as to realize the baking of the semiconductor devices on each bracket 13 .
  • the process area inside the above-mentioned storage chamber 11 is not closed, this process area will be affected by the environment and surrounding devices and cannot meet the cleanliness requirements of the process, and it is impossible to control the particles of semiconductor devices.
  • the oxygen content in the process area is controlled. During the curing process, if the oxygen content in the process area is too high, the encapsulant will be oxidized, thereby affecting the performance of the chip.
  • the heat loss generated by the above-mentioned electric heating tube 19 is relatively large, and it is greatly affected by the external environment, resulting in low heating efficiency and poor temperature control accuracy.
  • the temperature uniformity in the storage cavity 11 is poor, so that incomplete curing may occur, and in severe cases, the problems of foaming of the encapsulant and uneven warping of the wafer may occur.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor heat treatment equipment, which can not only realize the control of the particle and oxygen content of the wafer, but also improve the temperature control accuracy and temperature uniformity , so that the chip performance can be guaranteed.
  • a semiconductor heat treatment equipment which includes: a process chamber, a heating drum, a wafer support assembly, an air inlet pipeline, an exhaust pipeline and a gas-liquid separation device, wherein,
  • the process chamber is provided with a process space for accommodating the wafer support assembly, the bottom is provided with an opening for the wafer support assembly to enter and exit, the top is provided with an exhaust port, and the bottom of the side wall of the process chamber is provided with an opening. Provided with an air inlet;
  • the wafer support assembly can be lifted and lowered, and the wafer support assembly is lifted into the process chamber to seal the opening;
  • the heating cylinder is sleeved on the process chamber for heating the process chamber;
  • the air inlet pipeline is communicated with the air inlet, and is used for delivering gas into the process space;
  • the exhaust pipeline is communicated with the exhaust port through the heating cylinder, and is used for exhausting the gas in the process space;
  • the gas-liquid separation device is communicated with the exhaust pipeline for liquefying and collecting process by-products in the gas discharged from the process space, and discharging the remaining gas.
  • the heating cylinder includes a thermal insulation shell and a plurality of heating units, the thermal insulation shell is sleeved on the process chamber, and the plurality of heating units are arranged on the thermal insulation shell opposite to the process chamber. On the inner sidewall of the process space, they are respectively used to heat a plurality of different areas in the process space;
  • the heat treatment equipment also includes a temperature detector and a control unit, wherein,
  • the temperature detector is used for real-time detection of the actual temperature values of a plurality of the regions in the process space corresponding to the plurality of the heating units, and sending them to the control unit;
  • the control unit is configured to adjust the output power of the corresponding heating unit according to the difference between the actual temperature values of the multiple areas, so that the temperatures of the multiple areas tend to be consistent.
  • the temperature detector includes a detection tube and a plurality of thermocouples arranged in the detection tube, wherein,
  • the detection tube is vertically arranged in the process space, and the upper end of the detection tube is close to the top of the process chamber, and the lower end of the detection tube penetrates the bottom of the side wall of the process chamber and extends to the outside of the process chamber;
  • the positions of the plurality of the thermocouples correspond to the plurality of the regions in one-to-one correspondence.
  • the thermal insulation shell includes a cylindrical side wall, a top cover and a thermal insulation jacket, wherein,
  • the cylindrical side wall is sleeved on the process chamber
  • the top cover is arranged on the top of the cylindrical side wall to block the opening at the top of the cylindrical side wall, and the top cover is provided with a through hole for the exhaust pipe to pass through ;
  • the heat preservation sleeve is arranged between the cylindrical side wall and the process chamber, and is close to the bottom of the cylindrical side wall, and is used to block the space between the cylindrical side wall and the process chamber the annular interval.
  • a spherical connector is provided at the exhaust port of the process chamber
  • the air inlet end of the exhaust pipeline is provided with a spherical flange, the spherical flange is matched and connected with the spherical connection head, and the air outlet end of the exhaust pipeline is communicated with the gas-liquid separation device.
  • the through hole on the top cover is further provided with a sealing structure
  • the sealing structure includes a first annular seal, a second annular seal and a fixing component, wherein the through hole is a stepped hole , the first annular seal is located in the stepped hole, sleeved on the spherical flange, and the outer diameter of the first annular seal is smaller than the diameter of the stepped hole below the stepped surface;
  • the A second annular seal is sleeved on the intake end of the exhaust pipe and is located on the stepped surface of the stepped hole.
  • the outer diameter of the second annular seal is smaller than that of the stepped hole located on the stepped surface. Aperture above the surface;
  • the fixing assembly is fixedly connected with the top cover, and presses the second annular sealing member and the first annular sealing member downwards, so that the two are compressed and deformed.
  • a plurality of exhaust heating elements are sequentially arranged on the exhaust pipeline along the gas discharge direction, which are respectively used to heat different regions of the exhaust pipeline in the gas discharge direction.
  • the exhaust pipeline includes a first transition pipe and a second transition pipe connected in sequence along the gas discharge direction, wherein the first transition pipe includes a first transition pipe connected in sequence along the gas discharge direction.
  • the second transition pipe is arranged vertically.
  • the bottom of the side wall of the process chamber is provided with a plurality of air inlets along the circumferential direction;
  • the air intake pipeline is arranged around the process chamber, at least one air intake end and a plurality of air outlet ends are arranged on the air intake pipeline, and the plurality of air outlet ends of the air intake pipeline are connected with the plurality of air intake ends.
  • the mouths are connected in a one-to-one correspondence;
  • the intake pipeline is covered with a preheating structure for preheating the gas in the intake pipeline.
  • the process chamber includes a process pipe and a manifold, wherein the bottom of the process pipe is open, and the top is provided with the exhaust port; the top of the manifold is open, and the bottom of the manifold is open.
  • the opening is formed, and the top end of the manifold is sealed with the bottom end of the process pipe; the bottom end of the manifold is connected to the wafer after the wafer support assembly is lifted into the process chamber.
  • the circular support assembly is sealed and connected to seal the opening at the bottom of the manifold; and the air inlet is provided on the side wall of the manifold.
  • the wafer support assembly includes a stacked wafer support, a thermal insulation structure and a process door, and after the wafer support assembly is lifted into the process chamber, the wafer support and the partition a thermal structure is located in the process space, and the process door is sealingly connected to the bottom end of the process chamber to seal the opening at the bottom of the process chamber;
  • the thermal insulation structure is used for thermal insulation of the space above it.
  • the heat insulating structure includes a heat insulating support and a plurality of heat insulating boards arranged on the heat insulating support, and the plurality of the heat insulating boards are arranged at intervals along the vertical direction.
  • the opening at the bottom of the process chamber can be sealed, so as to ensure the sealing of the process space, so as to meet the requirements of the process for cleanliness, and Capable of particle control of semiconductor devices; at the same time, the intake and exhaust pipes are connected to the intake port at the bottom of the sidewall of the process chamber and the exhaust port at the top of the process chamber respectively to achieve intake and exhaust. Exhaust, can control the oxygen content of the process space.
  • the temperature uniformity in the circumferential direction of the process space can be effectively improved, and at the same time, the heating cylinder is less affected by the external environment, so that the heating efficiency and temperature control accuracy can be improved.
  • the semiconductor heat treatment equipment provided by the embodiment of the present invention by combining the above-mentioned wafer support assembly, air inlet and exhaust pipes, and heating cylinder, not only can control the particle and oxygen content of the wafer, but also can increase the temperature Control accuracy and temperature uniformity, so as to ensure chip performance, especially to meet the comprehensive requirements of advanced packaging processes for temperature control, oxygen content control, particle control, etc.
  • Fig. 1 is the internal structure diagram of the existing oven
  • Fig. 2 is the internal structure diagram of the installation groove of the existing oven
  • Fig. 3 is the structure diagram of the installation frame of the existing oven
  • FIG. 4 is a cross-sectional view of a semiconductor heat treatment equipment provided by an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a process chamber used in an embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of a thermal insulation shell adopted in an embodiment of the present invention.
  • FIG. 7 is a partial cross-sectional view of a process chamber at its exhaust port used in an embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of an exhaust pipeline used in an embodiment of the present invention.
  • FIG. 9 is a top cross-sectional view of a process chamber used in an embodiment of the present invention at its air inlet;
  • FIG. 10 is a cross-sectional view of an air intake pipeline installed on a chamber module adopted in an embodiment of the present invention.
  • FIG. 11 is a side cross-sectional view of the gas-liquid separation device used in the embodiment of the present invention.
  • an embodiment of the present invention provides a semiconductor heat treatment equipment, which can be applied to, for example, a curing process of encapsulant in the preparation process of advanced packaging equipment.
  • the semiconductor heat treatment equipment includes a process chamber 2 , a heating drum 3 , a wafer support assembly, an air inlet pipe, an exhaust pipe 4 and a gas-liquid separation device 5 .
  • the process chamber 2 is provided with a process space for accommodating the above-mentioned wafer support assembly, and the bottom of the process chamber 2 is provided with an opening for the wafer support assembly to enter and exit, and the top of the process chamber 2 is provided with an exhaust port, And the bottom of the side wall of the process chamber 2 is provided with an air inlet.
  • the above-mentioned wafer support assembly can be lifted and lowered, and the wafer support assembly is lifted into the process chamber 2 through the opening at the bottom of the process chamber 2 and then the opening is sealed.
  • the above-mentioned wafer support assembly may have various structures.
  • the above-mentioned wafer support assembly includes a wafer support 24 and a process gate 23, wherein the wafer support 24 is provided with a plurality of wafer bosses for supporting a plurality of wafer supports. Wafers 27, a plurality of wafers 27 are arranged at intervals along the vertical direction; and when the wafer holder 24 is located in the above-mentioned process space, the process gate 23 is sealedly connected with the bottom end of the process chamber 2 to seal the process chamber 2 bottom opening.
  • the wafer on the wafer holder 24 can be moved out or moved into the above-mentioned process space, and then the wafer can be moved out of or into the process space. Unloading.
  • the above-mentioned wafer support assembly further includes a heat insulation structure 242 , the heat insulation structure 242 is located between the wafer support 24 and the process door 23 for carrying the wafer support 24 and is connected with the above process door. 23 is connected.
  • the process door 23 is sealedly connected to the bottom end of the process chamber 2 to seal the opening at the bottom of the process chamber 2 .
  • the above-mentioned thermal insulation structure 242 is used to insulate the space above it, so as to further reduce the heat loss at the bottom of the process space, which is beneficial to improve the temperature uniformity of the process space.
  • the heat insulation structure 242 may have various structures.
  • the heat insulation structure 242 includes a heat insulation support 242a and a plurality of heat insulation boards 242b arranged on the heat insulation support 242a, and a plurality of heat insulation boards 242b are spaced apart in the vertical direction.
  • the above-mentioned heat insulating support 242 a is connected to the process door 23 and supports a plurality of wafer supports 24 .
  • the air inlet pipeline is communicated with the air inlet, and is used to deliver gas into the process space, for example, to deliver protective gas (eg nitrogen) into the process space during the curing process.
  • the exhaust pipe 4 passes through the above-mentioned heating cylinder 3 and communicates with the above-mentioned exhaust port, and is used for exhausting the gas in the above-mentioned process space (eg, protective gas containing process by-products).
  • the gas-liquid separation device 5 communicates with the above-mentioned exhaust pipeline 4, and is used for liquefying and collecting process by-products in the gas discharged from the process space, and discharging the remaining gas. With the aid of the gas-liquid separation device 5, the by-products of the process can be separated from the exhausted gas to ensure the cleanliness of the exhausted gas.
  • the process chamber 2 can have various structures.
  • the process chamber 2 includes a process pipe 21 and a manifold 22 , wherein the process pipe 21 has an open bottom and an open top.
  • the above-mentioned exhaust port 21a is provided; the top of the manifold 22 is open, and the bottom of the manifold 22 is open to form the above-mentioned opening for moving out or in of the wafer support assembly; the top of the manifold 22 is sealed with the bottom of the process pipe 21
  • the way of connection and sealing connection is, for example: the bottom end of the process pipe 21 and the top end of the manifold 22 are respectively provided with mutually butted flanges, and a sealing ring 29 is provided between the two flanges to align the two flanges. The gap between them is sealed.
  • the bottom end of the manifold 22 is sealedly connected to the wafer support assembly (eg, the process gate 23 ) after the above-mentioned wafer support assembly is lifted into the process chamber 2 .
  • the wafer support assembly eg, the process gate 23
  • the above-mentioned intake port is provided on the side wall of the manifold 22 .
  • the opening at the bottom of the process chamber is sealed, which can ensure the sealing of the process space, so as to meet the cleanliness requirements of the process and control the particles of semiconductor devices; at the same time, through
  • the intake line and the exhaust line are respectively communicated with the intake port located at the bottom of the side wall of the process chamber and the exhaust port located at the top of the process chamber to realize intake and exhaust, which can realize the oxygen content of the process space.
  • the air pressure in the process space can be controlled by controlling the gas flow rate of the air inlet pipeline into the process space, and by controlling the gas flow rate discharged from the process space by the exhaust line 4.
  • the pipeline 4 is used to replace the oxygen in the process space, so that the oxygen content in the process space can be controlled.
  • the semiconductor heat treatment equipment provided in the embodiment of the present invention may further include an oxygen analyzer 26, which is used to detect the oxygen content in the process space, so as to confirm whether the oxygen content in the process space meets the process requirements after the oxygen replacement is completed.
  • an oxygen analyzer 26 which is used to detect the oxygen content in the process space, so as to confirm whether the oxygen content in the process space meets the process requirements after the oxygen replacement is completed.
  • the semiconductor heat treatment equipment provided by the embodiments of the present invention can realize particle control of semiconductor devices on the basis of controlling the oxygen content of the process space, because in a low oxygen environment, particles generated due to oxidation can be reduced
  • the above-mentioned exhaust pipeline 4 can also discharge the by-products generated in the process in the process space. It can be seen from this that by using the above-mentioned wafer support assembly and the air inlet pipeline and the exhaust pipeline in combination, the particle and oxygen content control of the wafer can be realized, especially the requirements for oxygen content control and particle control in the advanced packaging process can be met. Comprehensive needs.
  • the heating cylinder 3 is sleeved on the process chamber 2 , that is, arranged around the process tube 21 , for heating the process chamber 2 .
  • the temperature uniformity in the circumferential direction of the process space 2 can be effectively improved, and at the same time, the heating cylinder 3 is less affected by the external environment, so that the heating efficiency and Temperature control accuracy.
  • the heating cylinder 3 includes a thermal insulation shell 32 and a plurality of heating units 31, wherein the thermal insulation shell 32 is sleeved on the process chamber 2; On the inner sidewall, they are used to heat a number of different areas in the process space. For example, four areas (A-D) are shown in FIG. 4, and the four areas (A-D) are distributed in the vertical direction. Correspondingly, there are four heating units 31, which are one with the four areas (A-D). One correspondence, to heat the four zones (A-D) independently. In this way, the temperature uniformity in the circumferential and axial directions of the process space can be effectively improved. At the same time, with the help of the thermal insulation casing 32, the heat loss of the heating unit 31 can be reduced, and the influence of the external environment can be avoided, so that the heating efficiency and the temperature control accuracy can be improved.
  • the semiconductor heat treatment equipment further includes a temperature detector 33 and a control unit (not shown in the figure), wherein the above-mentioned temperature detector 33 is used to detect the above-mentioned temperature in real time.
  • the actual temperature values of the multiple areas in the process space corresponding to the multiple heating units 31 are sent to the control unit; the control unit is used to adjust the corresponding heating according to the difference between the actual temperature values of the multiple areas The output power of the unit 31 so that the temperature of the multiple regions tends to be uniform. Taking the four regions (A-D) shown in FIG.
  • control unit calculates and obtains the output power of each heating unit 31 according to the actual temperature values of the four regions (A-D) detected by the temperature detector 33 using a specified algorithm, For example, for regions A and D near the top and bottom of the process space, since they are more susceptible to environmental influences and generate more heat loss, their output power should be greater than that of regions B and C, so that regions A and D can be compared with regions The temperature difference between B and C is controlled within the allowable temperature difference range.
  • the above-mentioned temperature detector 33 may have various structures.
  • the temperature detector 33 includes a detection tube 331 and a plurality of thermocouples 332 arranged in the detection tube 331 , wherein the detection tube 331 is vertical is arranged in the above-mentioned process space, and the upper end of the detection tube 331 is close to the top of the process space, and the lower end of the detection tube 331 penetrates the bottom of the side wall of the process chamber 2 (for example, the manifold 22), and extends to the outside of the process chamber 2;
  • the positions of the plurality of thermocouples 332 correspond to the plurality of regions one-to-one, and the wires of the plurality of thermocouples 332 are all drawn out from the lower end of the detection tube.
  • each heating unit 31 includes a heating wire embedded on the inner side wall of the cylindrical side wall 321 and wound around the axial direction of the cylindrical side wall 321 .
  • the heating wires are independent of each other, so that the magnitude of the current or voltage thereof can be individually controlled.
  • the heating unit 31 may also adopt any other heating element capable of generating heat.
  • the heating unit 31 is not limited to being embedded in the inner side wall of the cylindrical side wall 321 , as long as the cylindrical side wall 321 can keep the heating unit 31 warm.
  • the top cover 322 is disposed on the top of the cylindrical side wall 321 to block the opening at the top of the cylindrical side wall 321, and the top cover 322 is provided with a through hole 322a for the exhaust pipe 4 to pass through. .
  • the exhaust line 4 can be connected to the exhaust port 21a of the process chamber 2, and the heat generated by the heating unit 31 can be prevented from being lost from the top opening under the conduction of the ambient air flow, thereby ensuring the temperature control effect.
  • the above-mentioned thermal insulation sleeve 323 is disposed between the above-mentioned cylindrical side wall 321 and the process chamber 2 (ie, the manifold 22 ), and is close to the bottom of the cylindrical side wall 321 , and is used to block the cylindrical side wall 321 and the process chamber.
  • the annular space between 2 can prevent the heat generated by the heating unit 31 from being lost from the annular space, thereby ensuring the temperature control effect.
  • the exhaust port of the process chamber 2 is provided with a spherical connector 422;
  • the air inlet end of the pipeline 4 is provided with a spherical flange 421 , and the spherical flange 421 is connected with the spherical joint 422 .
  • the spherical flange 421 is connected with the spherical joint 422, and the inner spherical surface of the spherical flange 421 can rotate relative to the outer spherical surface of the spherical joint 422 and rotate around the spherical center of the outer spherical surface, thereby changing the relative position of the exhaust pipe 4 to the spherical surface.
  • the angle of the process chamber 2, that is, the angle of the exhaust pipe 4 can be adjusted, so as to facilitate the installation and realize the flexible connection at the same time.
  • connection method between the spherical flange 421 and the exhaust pipe 4 is integrally formed or welded, for example; the connection method between the spherical connection head 422 and the process chamber 2 (ie, the process pipe 22 ) is integrally formed, for example. Or welding, etc.
  • other flexible connection or universal connection can also be used between the intake end of the exhaust pipe 4 and the exhaust port of the process chamber 2, as long as the angle of the exhaust pipe 4 can be achieved Adjustable.
  • the gas outlet end of the exhaust pipe 4 is communicated with the gas-liquid separation device 5 .
  • the through hole 322a on the top cover 322 is also provided with a sealing structure 7, and the sealing structure 7 includes a first annular sealing member 71, a second annular sealing member 72 and a fixing component 73.
  • the above-mentioned top cover The above-mentioned through hole 322a in 322 is a stepped hole, and the first annular seal 71 is located in the stepped hole and is sleeved on the spherical flange 421.
  • a boss 421a can be set on the spherical flange 421, the boss For example, 421a is located at one end of the spherical flange 421 away from the exhaust pipe 4, and protrudes relative to the outer spherical surface of the spherical flange 421.
  • the first sealing member 71 is superimposed on the boss 421a, and the The outer diameter is smaller than the hole diameter (ie, the minimum diameter) of the stepped hole below its stepped surface, so as to avoid the hole wall from being worn due to contact with the first sealing member 71 ; the above-mentioned second annular sealing member 72 is sleeved on the exhaust pipe 4 .
  • the outer diameter of the second annular seal 72 is smaller than the diameter of the stepped hole above the stepped surface (ie, the maximum diameter), so as to avoid the hole wall due to The two seals 72 contact and wear.
  • the above-mentioned fixing component 73 is fixedly connected with the top cover 322, and presses the second annular sealing member 72 and the first annular sealing member 71 downwardly so as to cause compression deformation of the two. That is to say, the vertical distance between the fixing assembly 73 and the above-mentioned boss 421a is smaller than the sum of the thicknesses of the second sealing member 72 and the first sealing member 71 in the original state, so that the second annular sealing member 72 and the first sealing member 71 are in the original state.
  • An annular seal 71 is compressed and deformed, so that it can perform a sealing function. Since the top temperature of the process chamber 2 is relatively high, in order to ensure the thermal insulation effect, optionally, both the second annular seal 72 and the first annular seal 71 are made of high temperature resistant flexible materials such as refractory fiber materials.
  • the compression amount of the first annular seal 71 is greater than the compression amount of the second annular seal 72 . Since the compression amount of the first annular seal 71 is larger, the pressing force acting on the boss 421a is larger, which makes the sealing between the spherical flange 421 and the spherical joint 422 more reliable. Meanwhile, since the compression amount of the second annular seal 72 is small (eg, 0-3 mm), this can prevent the stepped surface of the stepped hole from being damaged due to excessive pressure.
  • the components are respectively used to heat different regions of the exhaust pipe 4 in the above-mentioned gas discharge direction.
  • the process by-products can be kept in a gaseous state, preventing non-gaseous process by-products from clogging the exhaust pipeline 4, and allowing the self-exhaust pipeline 4 to flow into the exhaust pipeline 4.
  • the temperature of the gas in the gas-liquid separation device 5 is more conducive to rapid liquefaction, thereby improving the liquefaction efficiency.
  • the above-mentioned exhaust pipe 4 includes a first transition pipe 41a and a second transition pipe 41b connected in sequence along the gas discharge direction, wherein , the first transition pipe 41a includes a first vertical section 411, an inclined section 412 and a second vertical section 413 connected in sequence along the gas discharge direction.
  • the gas inlet end of the inclined section 412 is higher than the gas outlet end of the inclined section 412, and the inclined section
  • the inclination angle of 412 with respect to the horizontal plane is, for example, 5°.
  • the above-mentioned second transition pipe 41b is arranged vertically so as to be connected with the gas-liquid separation device 5 .
  • the above-mentioned first vertical section 411 and second vertical section 413 are respectively used to realize the connection with the process chamber 2 and the second transition pipe 41b.
  • first transition tube 41a is closer to the cavity assembly 2, it is preferably a high temperature resistant tube such as a quartz tube; while the second transition tube 41b can be a metal tube with lower cost.
  • the above-mentioned exhaust heating elements are two, which are a first exhaust heating element 81 and a second exhaust heating element 82 respectively.
  • the exhaust heating element 81 covers the first transition pipe 41a for heating the first transition pipe 41a; the second exhaust heating element 82 covers the second transition pipe 41b for heating the second transition pipe 41b
  • the transition pipe 41b is heated.
  • the heating temperature of the first exhaust heating element 81 is higher than the heating temperature of the second exhaust heating element 82, and the heating temperature of the first exhaust heating element 81 is higher than the gasification temperature of the process by-products (eg, 350°C).
  • the heating temperature of the second exhaust heating element 82 is lower than the gasification temperature of the process by-products (eg, 250 °C), so that it can be ensured that the first transition tube 41a is still a horizontal tube.
  • the process by-products therein have sufficient fluidity, and the temperature of the exhaust gas flowing into the gas-liquid separation device 5 from the second transition pipe 41b can be more conducive to rapid liquefaction, thereby improving the liquefaction efficiency.
  • a heat preservation member 83 is further provided at the connection between the first transition pipe 41a and the second transition pipe 41b, so as to avoid heat loss at the connection.
  • a sealing member is further provided between the first transition pipe 41a and the second transition pipe 41b, and the temperature resistance temperature of the sealing member is, for example, 300° C. or lower.
  • the heating temperature of the above-mentioned second exhaust heating element 82 should be lower than the temperature resistance temperature to avoid failure of the sealing element.
  • the bottom of the side wall of the process chamber 2 (for example, the manifold 22 ) is provided with a plurality of air inlets in the circumferential direction; and the air inlet pipeline is arranged around the process chamber 2 , and the air inlet pipeline is provided with At least one air inlet end and a plurality of air outlet ends, and the plurality of air outlet ends of the air inlet pipeline communicate with the plurality of air inlet ports in one-to-one correspondence.
  • the intake pipe 9 is provided with an intake end 911 for connecting with the air source, and the intake pipe 9 is also provided with two outlet ends 912, which are respectively connected to the air source.
  • the intake pipe 9 is a semicircular pipe, and the intake end 911 is located in the middle of the intake pipe 9, and the two outlet ends 912 are located at both ends of the intake pipe 9.
  • the gas entering the air inlet pipeline 9 from the end 911 will be divided into two paths to flow toward the two air outlet ends 912 respectively, and enter the process chamber 2 through the two air outlet ends 912 at the same time, so that the uniformity of air intake can be improved.
  • the air inlet pipeline 9 is covered with a preheating structure 92, and the preheating structure 92 is used to heat the gas in the air inlet pipeline 9, so that the process gas can be preheated before it enters the process space.
  • the gas temperature provided by the gas source is generally 20°C and the flow rate is relatively large, the temperature is far lower than the temperature of the process space, so that if the gas directly enters the process space, it will take away a large amount of heat at the bottom of the process space, thus affecting the temperature uniformity. Therefore, by using the preheating structure 92 to preheat the gas before it enters the process space, the influence of the gas temperature difference on the bottom temperature region of the process space can be improved, thereby improving the temperature uniformity.
  • the preheating structure 92 can have various structures, for example, including an intake air heating element covering the intake pipe 9 and a temperature detecting element (not shown in the figure) for detecting the temperature of the gas in the intake pipe 9 . .
  • the temperature of the gas in the intake pipeline 9 is detected by the temperature detecting element, so that the temperature of the intake gas can be precisely controlled to meet the technological requirements.
  • the temperature of the gas in the inlet line 9 is made consistent with the process temperature in the process space.
  • the above-mentioned air intake heating element is also covered with a heat insulating element to reduce heat loss and improve preheating efficiency, and the heat insulating element is made of insulating material such as silica gel or refractory fiber, for example.
  • the above-mentioned gas-liquid separation device 5 includes, for example, a gas-liquid separation component 51 , a liquid collecting container 52 , a liquid pipeline 53 respectively connected to the two, and an on-off valve 54 provided on the liquid pipeline 53 .
  • the gas-liquid separation component 51 is connected to the above-mentioned exhaust pipeline 4, and is used to cool the process by-products in the gas discharged from the process space to liquefy them, separate them from the discharged gas and flow into the liquid collection Vessel 52, thereby enabling the liquefaction and collection of the above-mentioned process by-products.
  • the separated clean gas will be discharged into the extraction device, which can be used for factory exhaust pipes, etc.
  • the gas-liquid separation assembly 51 is a condensing pipe for conveying waste gas.
  • the exhaust gas is condensed, and since the condensation pipe is vertical, this allows the condensed liquid to separate from the exhaust gas under its own gravity.
  • a convex structure 511 is provided on the inner wall of the condensing pipe, and the convex structure 511 includes a slope opposite to the conveying direction of the exhaust gas in the condensing pipe and inclined with respect to the axis of the condensing pipe, so as to increase the contact between the condensing pipe and the exhaust gas area, thereby enhancing the condensation effect of the condensation pipe.
  • the inclined surface By making the inclined surface opposite to the conveying direction of the exhaust gas in the condensing pipe, it can be ensured that the inclined surface can be in contact with the exhaust gas, so as to realize the cooling of the exhaust gas. At the same time, by inclining the inclined surface with respect to the axis of the condensation duct, it is possible to avoid disturbing the airflow and at the same time prevent the flow of the condensed liquid from being obstructed.
  • the structure of the above-mentioned raised structure 511 can be various, for example, the raised structure includes a plurality of sheet-like protrusions arranged in an array on the inner wall of the condensing pipe, and each sheet-like protrusion (the plane where it is located) is opposite to the condensing pipe.
  • the inner wall is inclined downward, that is, the top surfaces of the plurality of sheet-like protrusions form the aforementioned inclined surfaces.
  • the opening at the bottom of the process chamber can be sealed, which can ensure the tightness of the process space and can satisfy the requirements for cleanliness of the process.
  • the air inlet pipeline and the exhaust pipeline are used to communicate with the air inlet at the bottom of the side wall of the process chamber and the exhaust port at the top of the process chamber, respectively.
  • the oxygen content of the process space can be controlled.
  • the temperature uniformity in the circumferential direction of the process space can be effectively improved, and at the same time, the heating cylinder is less affected by the external environment, so that the heating efficiency and temperature can be improved. control precision.
  • the semiconductor heat treatment equipment provided by the embodiment of the present invention by combining the above-mentioned wafer support assembly, air inlet and exhaust pipes, and heating cylinder, not only can control the particle and oxygen content of the wafer, but also can increase the temperature Control accuracy and temperature uniformity, so as to ensure chip performance, especially to meet the comprehensive requirements of advanced packaging processes for temperature control, oxygen content control, particle control, etc.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Bipolar Transistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Un mode de réalisation de la présente invention est un dispositif de traitement thermique à semi-conducteur. Un espace de traitement destiné à recevoir un ensemble support de tranche est disposé dans une chambre de traitement, une ouverture permettant l'entrée et la sortie de l'ensemble de support de tranche est agencée au niveau d'une partie inférieure de celle-ci, une ouverture d'échappement de gaz est disposée au niveau d'une partie supérieure de celle-ci, et une entrée de gaz est disposée au niveau d'une partie inférieure d'une paroi latérale de la chambre de traitement ; l'ensemble de support de tranche peut être soulevé et abaissé, et une fois que l'ensemble de support de tranche est soulevé dans la chambre de traitement, l'ouverture décrite peut être scellée ; un cylindre de chauffage est emmanché sur la chambre de traitement et est utilisé pour chauffer la chambre de traitement ; une conduite d'admission de gaz est en communication avec l'entrée de gaz et est utilisée pour distribuer un gaz dans l'espace de traitement ; une conduite d'échappement de gaz traverse le cylindre de chauffage et établit une communication avec l'ouverture d'échappement de gaz, et ladite conduite est utilisée pour retirer un gaz à l'intérieur de l'espace de traitement ; un appareil de séparation gaz-liquide est en communication avec la conduite d'échappement de gaz et est utilisé pour la liquéfaction et la collecte d'un sous-produit de traitement dans un gaz retiré de l'espace de traitement, et retirant le gaz restant. Le dispositif de traitement thermique à semi-conducteur selon un mode de réalisation de la présente invention peut réaliser une commande de teneur en particules et en oxygène pour une tranche, et améliore la précision de régulation de température et l'uniformité de température.
PCT/CN2022/082963 2021-04-14 2022-03-25 Dispositif de traitement thermique à semi-conducteur WO2022218126A1 (fr)

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CN114754585B (zh) * 2022-04-21 2024-03-26 北京北方华创微电子装备有限公司 烧结设备
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