WO2022213969A1 - 用于进行半导体工艺的反应腔室 - Google Patents

用于进行半导体工艺的反应腔室 Download PDF

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Publication number
WO2022213969A1
WO2022213969A1 PCT/CN2022/085268 CN2022085268W WO2022213969A1 WO 2022213969 A1 WO2022213969 A1 WO 2022213969A1 CN 2022085268 W CN2022085268 W CN 2022085268W WO 2022213969 A1 WO2022213969 A1 WO 2022213969A1
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WIPO (PCT)
Prior art keywords
ring
outer ring
pressing
reaction chamber
annular groove
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PCT/CN2022/085268
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English (en)
French (fr)
Inventor
郭浩
李冬冬
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北京北方华创微电子装备有限公司
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Publication of WO2022213969A1 publication Critical patent/WO2022213969A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

  • the present disclosure belongs to the technical field of semiconductors, and more particularly, to a reaction chamber for conducting semiconductor processes.
  • PVD Physical Vapor Deposition
  • TSV Through Silicon Via
  • the application of PVD in TSV is mainly to deposit barrier layer and copper seed layer inside TSV.
  • a wafer eg, silicon wafer
  • a susceptor mechanically clamped to the process position as the susceptor is raised
  • the wafer is held in place to prevent the wafer from shifting during the process.
  • the size and weight of the mechanical pressure ring are too large, which may cause the wafer to be crushed, and the wall thickness of the mechanical pressure ring is already too thin to reduce the weight by thinning.
  • the present disclosure provides a reaction chamber for semiconductor processing, including a shielding member disposed around the inner wall of the reaction chamber, a supporting device for supporting wafers and capable of lifting and lowering, and further comprising: a mechanical pressure ring for fixing the wafer on the carrier device when the carrier device is in the process position, the mechanical pressure ring includes an inner ring ring and an outer ring ring; wherein,
  • the outer ring of the pressing ring is arranged around the inner side of the shielding member, and when the carrying device is lower than the process position, the outer ring of the pressing ring is supported by the shielding member;
  • the inner ring of the pressing ring includes an inner ring main body and a lap joint connected with the inner ring main body and located on the outer circumference of the inner ring main body, wherein when the bearing device is lower than the process position, the The overlapping portion is stacked on the outer ring of the pressing ring; when the carrying device is raised to the process position, the overlapping portion is separated from the outer ring of the pressing ring, and the main body of the inner ring is pressed against the outer ring of the pressing ring. on the edge region of the upper surface of the wafer.
  • the upper surface of the inner peripheral edge of the outer ring of the pressing ring is provided with a first annular groove encircling along its circumferential direction, and the edge of the overlapping portion shields part of the first annular groove.
  • the upper surface of the outer ring of the pressing ring is provided with a plurality of protrusions spaced along the circumferential direction thereof for supporting the overlapping portion.
  • a second annular groove is formed on the lower surface of the outer peripheral edge of the outer ring of the pressing ring, one end of the shielding member is fixed to the inner wall of the reaction chamber, and the other end of the shielding member has a connection with the second annular groove.
  • an annular bent portion with opposite opening directions of the annular groove comprising a first sub-bent portion extending from the lower end of the shielding member to the inner side of the shielding member, and a first sub-bending portion extending from the first sub-bending portion a second sub-bending part of which one end of the part away from the shielding member is upwardly bent, wherein,
  • the second sub-bending portion is located in the second annular groove, and one end of the second sub-bending portion away from the first sub-bending portion is in contact with the groove bottom of the second annular groove. for supporting the outer ring of the pressing ring;
  • the surfaces of the first sub-bending portion and the outer ring of the pressing ring opposite to each other are arranged at intervals; the second sub-bending portion is located between the outer peripheral wall and the inner peripheral wall of the second annular groove at intervals.
  • one of the inner peripheral wall of the outer ring of the pressing ring and the outer peripheral wall of the main body of the inner ring is provided with a plurality of notches spaced along the circumferential direction of the outer ring of the pressing ring.
  • the other of the inner peripheral wall of the ring and the outer peripheral wall of the inner ring main body is provided with a plurality of bosses spaced along the circumferential direction of the outer ring of the pressing ring, and the number of the notches is the same as the number of the bosses. The number is the same, and each of the notches is matched with each of the bosses in a one-to-one correspondence.
  • the shape of the notch includes any one or a combination of arc, semicircle or rectangle; the boss has a shape matching the corresponding notch.
  • the carrying device is in the shape of a disk, the outer periphery of the carrying device is provided with an annular flange protruding radially outward, the outer periphery of the annular flange is provided with an annular first inclined surface, the The diameter of a slope increases from top to bottom;
  • the lower surface of the outer ring of the pressure ring is provided with a base hole concentric with the outer ring of the pressure ring, the hole wall of the base hole includes a second inclined surface, and the diameter of the second inclined surface increases from top to bottom,
  • the carrying device can enter into the base hole during the ascending process, and the second inclined surface can fit with the first inclined surface.
  • one of the bottom of the base hole and the annular flange is provided with a plurality of positioning holes spaced along its circumferential direction, and the bottom of the base hole and the annular flange are provided with a plurality of positioning holes.
  • the other one is provided with a plurality of positioning pins spaced along its circumferential direction, the number of the positioning pins is the same as the number of the positioning holes, and during the lifting process of the carrying device, each of the positioning pins is one by one. Correspondingly move into each of the positioning holes.
  • the upper surface of the carrying device is provided with an annular convex portion, and the outer peripheral wall of the convex portion is provided with an annular second inclined surface;
  • the lower surface of the inner ring of the pressure ring is provided with a third annular groove, and the outer peripheral wall of the third annular groove
  • the diameter of the third inclined surface increases from top to bottom;
  • the lower surface of the inner ring of the pressure ring is provided with a third annular groove, and the outer peripheral wall of the third annular groove includes an annular fourth annular groove.
  • an inclined plane the diameter of the fourth inclined plane increases from top to bottom;
  • the protruding portion moves into the third annular groove, and the fourth inclined surface can fit with the third inclined surface.
  • the center of the inner ring body is provided with a through hole penetrating the inner ring body along the axial direction thereof, and a plurality of pressing claws spaced along the circumferential direction of the hole wall of the through hole are provided for When the carrier device is raised to the process position, it is pressed against the edge region of the upper surface of the wafer.
  • the beneficial effect of the reaction chamber for semiconductor processing involved in the present disclosure is that the mechanical pressure ring adopts a split structure composed of an inner pressure ring and an outer pressure ring.
  • the carrying device is lower than the process position, the pressure
  • the outer ring of the ring is supported by the shield, and the overlapping part of the inner ring of the pressing ring is superimposed on the outer ring of the pressing ring;
  • the carrier device is raised to the process position, the inner ring main body of the inner ring of the pressing ring is jacked up by the carrier device.
  • the inner ring body relies on its own gravity to press on the edge area of the upper surface of the wafer, and the lap joint is separated from the outer ring of the pressure ring, since only the inner ring of the pressure ring acts on the wafer, which is different from the entire mechanical pressure in the prior art.
  • it can suppress the wafer to prevent displacement during the process, and at the same time reduce the weight directly acting on the wafer, so that the risk of the wafer being crushed is greatly reduced. It is suitable for occasions where sheets need to be pressed, and is suitable for semiconductor packaging PVD equipment and other IC PVD equipment.
  • FIG. 1 shows a schematic diagram of a state when a carrying device of a reaction chamber is lower than a process position according to an embodiment of the present disclosure
  • FIG. 2 shows a schematic diagram of a state when the carrying device of the reaction chamber is located at a process position according to an embodiment of the present disclosure
  • FIG. 3 shows a schematic structural diagram of an outer ring of a pressure ring according to an exemplary embodiment of the present disclosure
  • FIG. 4 shows a schematic structural diagram of an inner ring of a pressure ring according to an exemplary embodiment of the present disclosure
  • FIG. 5 shows a partial schematic view of the connection between the outer ring of the pressure ring and the inner ring of the pressure ring according to an exemplary embodiment of the present disclosure
  • Fig. 6 shows the enlarged schematic diagram at A in Fig. 5;
  • FIG. 7 shows a partial schematic diagram of the separation state of the inner ring of the pressure ring and the outer ring of the pressure ring when the bearing device of the reaction chamber is located at the process position according to an exemplary embodiment of the present disclosure
  • Fig. 8 shows the partial enlarged schematic diagram in Fig. 7;
  • the present disclosure provides a reaction chamber for semiconductor processing, including a shielding member disposed around the inner side of the reaction chamber, and a supporting device capable of lifting and lowering a wafer. Also included: a mechanical pressure ring for securing the wafer on the carrier when the carrier is in the process position. While the carrier device is in the process position, semiconductor processing can be performed on the wafer placed on the carrier device.
  • the mechanical pressure ring includes a pressure ring inner ring and a pressure ring outer ring; wherein, the pressure ring outer ring is arranged around the inner side of the shielding member, and when the bearing device is lower than the above-mentioned process position, the pressure ring outer ring is supported by the shielding member;
  • the inner ring of the pressure ring includes an inner ring main body and a lap joint connected to the inner ring main body and located on the outer circumference of the inner ring main body, wherein, when the bearing device is lower than the above-mentioned process position, the lap joint is superimposed on the outer ring of the pressure ring when the carrier device is raised to the above-mentioned process position, the overlapping portion is separated from the outer ring of the pressing ring, and the main body of the inner ring is pressed on the edge region of the upper surface of the wafer.
  • the mechanical pressure ring adopts a split structure composed of an inner pressure ring and an outer pressure ring.
  • the outer pressure ring It is supported by the shield, and the overlapping part of the inner ring of the pressure ring is superimposed on the outer ring of the pressure ring;
  • the bearing device is raised to the process position, the inner ring main body of the inner ring of the pressure ring is lifted by the bearing device, and the inner ring The main body is pressed on the edge area of the upper surface of the wafer by its own gravity, and the overlapping portion is separated from the outer ring of the pressure ring.
  • the carrier device will lift the inner ring of the pressure ring independently, so that the inner ring of the pressure ring is separated from the outer ring of the pressure ring. Only bear the weight of the inner ring of the pressure ring, thereby reducing the weight directly acting on the wafer, so that the risk of the wafer being crushed by the mechanical pressure ring is greatly reduced.
  • the upper surface of the inner peripheral edge of the outer ring of the pressing ring is provided with a first annular groove encircling along its circumferential direction, and the edge of the overlapping portion shields part of the first annular groove.
  • the edge of the lap joint does not contact the outer ring of the pressing ring due to the existence of the first annular groove, thereby preventing metal particles from sputtering to the edge of the lap joint and bonding with the outer ring of the pressing ring to cause particle generation.
  • the upper surface of the outer ring of the pressing ring is provided with a plurality of protrusions spaced and distributed along the circumferential direction thereof for supporting the overlapping portion.
  • the inner ring of the pressure ring falls on the outer ring of the pressure ring through the lap joint, and the protrusions on the outer ring of the pressure ring are in contact with the lower part of the lap joint of the inner ring of the pressure ring. surface for support.
  • the protrusion is a cylinder, and the cross section of the protrusion parallel to the upper surface of the outer ring of the pressing ring is circular, rectangular or triangular.
  • a second annular groove is provided on the lower surface of the outer peripheral edge of the outer ring of the pressing ring, one end of the shielding member is fixed to the inner wall of the reaction chamber, and the other end of the shielding member has an annular bending portion opposite to the opening direction of the second annular groove , the annular bending portion comprises a first sub-bending portion extending from the lower end of the shielding member to the inner side of the shielding member, and a second sub-bending portion upwardly bent from an end of the first sub-bending portion away from the shielding member, Wherein, the second sub-bending portion is located in the second annular groove, and one end of the second sub-bending portion away from the first sub-bending portion is in contact with the groove bottom of the second annular groove for supporting the outer ring of the pressing ring; The surfaces of a sub-bending portion and the outer ring of the pressing ring opposite to each other are arranged at intervals; the second sub-bending portion is located between the outer peripheral wall and the inner peripheral wall of the second annul
  • the opening of the second annular groove faces downward, and the shielding member, the first sub-bending portion and the second sub-bending portion together form an annular groove structure with a “U” shape in cross section, and the opening of the annular groove structure Upward, the annular groove structure and the second annular groove are inserted into each other to form a labyrinth structure.
  • the second annular groove is in contact with the top end of the second sub-bending portion due to its own weight, so as to prevent the plasma from falling to the bottom of the reaction chamber.
  • one of the inner peripheral wall of the outer ring of the pressing ring and the outer peripheral wall of the main body of the inner ring is provided with a plurality of notches spaced along the circumferential direction of the outer ring of the pressing ring, and the inner peripheral wall of the outer ring of the pressing ring and the main body of the inner ring are provided with a plurality of notches spaced along the circumferential direction of the outer ring of the pressing ring
  • the other one of the outer peripheral walls is provided with a plurality of bosses spaced along the circumferential direction of the outer ring of the pressure ring, the number of notches is the same as the number of bosses, and each gap is matched with each boss in a one-to-one correspondence. .
  • the inner ring of the pressure ring falls on the outer ring of the pressure ring through the lap joint, and at the same time each boss falls into the corresponding gap along the falling direction, and the cooperation between the gap and the boss makes the two have
  • the positioning relationship restricts the inner ring of the pressure ring to only move up and down, preventing the inner ring of the pressure ring from rotating relative to the outer ring of the pressure ring.
  • the shape of the notch includes any one or a combination of arc, semicircle or rectangle, and the boss has a shape matching the corresponding notch to achieve positioning.
  • the notch penetrates through the upper surface and the lower surface of the outer ring of the pressing ring.
  • the outer periphery of the bearing device is provided with an annular flange, the outer periphery of the annular flange is provided with an annular first inclined surface, and the diameter of the first inclined surface increases from top to bottom;
  • the lower surface of the outer ring of the pressure ring is provided with a base hole concentric with the outer ring of the pressure ring, and the hole wall of the base hole includes a second inclined surface, the diameter of the second inclined surface increases from top to bottom, and the bearing device can be lifted during the ascending process. into the base hole, and the second inclined surface can fit with the first inclined surface.
  • the carrying device can be concentric with the outer ring of the pressing ring when it ascends to the process position.
  • one of the hole bottom of the base hole and the annular flange is provided with a plurality of positioning holes spaced along its circumference
  • the other of the hole bottom of the base hole and the annular flange is provided with a plurality of positioning holes along its circumference.
  • a plurality of locating pins distributed at intervals in the circumferential direction, the number of locating pins is the same as the number of locating holes, and during the lifting process of the carrying device, each locating pin is moved into each locating hole correspondingly one by one.
  • the positioning hole is used to match the pin on the bearing device, and the pin cooperates with the positioning hole to play a positioning role to avoid rotation between the outer ring of the pressure ring and the bearing device.
  • the upper surface of the carrying device is provided with an annular convex portion, and the outer peripheral wall of the convex portion includes an annular third inclined surface; the diameter of the third inclined surface increases from top to bottom;
  • the lower surface of the inner ring of the pressure ring is provided with a third annular groove, and the outer peripheral wall of the third annular groove includes an annular fourth inclined surface, and the diameter of the fourth inclined surface increases from top to bottom; during the lifting process of the bearing device, the convex part moves into in the third annular groove, and the fourth inclined surface can fit with the third inclined surface.
  • the carrying device can be concentric with the inner ring of the pressing ring when it ascends to the process position.
  • the center of the inner ring main body is provided with a through hole penetrating the inner ring main body along its axial direction, and the hole wall of the through hole is provided with a plurality of pressing claws spaced along its circumferential direction, for the lifting of the carrying device to the process position, pressing against the edge area of the upper surface of the wafer.
  • the plurality of pressing claws are evenly distributed along the circumferential direction of the above-mentioned through hole.
  • the material of the inner ring of the pressure ring and the outer ring of the pressure ring is titanium, other metal materials such as stainless steel, aluminum, etc. can also be used, and non-metal materials such as ceramics can also be used, and the ceramics are, for example, Al2O3.
  • the carrier device when the carrier device is lower than the process position (eg, at the transfer position), the outer ring of the pressing ring is supported by the shielding member, and the overlapping parts of the inner ring of the pressing ring are overlapped On the outer ring of the pressure ring, and the protrusions of the outer ring of the pressure ring are in contact with the lower surface of the lap joint of the inner ring of the pressure ring, after the wafer to be processed is transferred to the carrier device, the carrier device is self-transferring. The position is raised to the process position to perform semiconductor processing on the wafer.
  • the annular flange on the outer periphery of the carrier device supports the outer ring of the pressure ring.
  • the inner ring of the pressure ring falls on the wafer, so that the wafer is The inner ring of the pressure ring is pressed;
  • the inner ring body of the inner ring of the pressure ring is held up by the carrier device, and a gap ⁇ is formed between the protrusion of the outer ring of the pressure ring and the overlapping portion.
  • the outer ring of the pressure ring is separated, and the weight of the inner ring of the pressure ring is completely pressed on the wafer.
  • the weight under pressure is only the weight of the inner ring of the pressure ring. Compared with the weight of the entire mechanical pressure ring acting on the wafer, the weight is reduced by about a quarter.
  • the wafer is mechanically pressed by the ring. The risk of crushing is greatly reduced, the material and weight of the outer ring of the pressure ring will not affect the wafer, and the shape of the inner ring of the pressure ring is easy to design to ensure the appropriate size to press the wafer.
  • the reaction chamber for semiconductor processing involved in the present disclosure can be adapted to the occasions where thin sheets (with a thickness of 100-500 microns) need to be pressed, and can be used in semiconductor packaging PVD equipment, and can also be applied in other IC PVD equipment, and can Applicable to 8" chamber, 12" chamber, 8"/12" compatible PVD chamber.
  • the present disclosure provides a reaction chamber for semiconductor processing, including a shielding member 1 disposed around the inner side of the reaction chamber, a supporting device for supporting wafers 4 and capable of lifting and lowering 3 and a mechanical pressure ring for fixing the wafer 4 on the carrier device 3 when the carrier device 3 is in the process position.
  • the carrier device 3 can perform a semiconductor process on the wafer 4 placed thereon at the above-mentioned process position.
  • the mechanical pressure ring includes a pressure ring inner ring 5 and a pressure ring outer ring 2; wherein, the pressure ring outer ring 2 is arranged around the inner side of the shielding member 1, and when the bearing device 3 is lower than the above process position, the pressure ring outer ring 2 is formed by The shield 1 supports.
  • the inner ring 5 of the pressure ring includes an inner ring main body 52 and a lap joint 51 connected to the inner ring main body 52 and located on the outer circumference of the inner ring main body 52 , wherein when the bearing device 3 is lower than the above-mentioned process position, the lap joint 51 It is stacked on the outer ring 2 of the pressure ring; when the bearing device 3 rises to the above-mentioned process position, the bearing device 3 can rise to lift the inner ring 5 of the pressure ring, and drive the overlapping part 51 to be separated from the outer ring 2 of the pressure ring, so as to The inner ring 5 of the pressing ring is pressed against the edge area of the upper surface of the wafer 4 .
  • the upper surface of the inner peripheral edge of the outer ring 2 of the pressing ring is provided with a first annular groove 21 surrounding along its circumferential direction, and the edge of the overlapping portion 51 shields part of the first annular groove 21 .
  • the upper surface of the outer ring 2 of the pressure ring is provided with a plurality of protrusions 22 spaced along its circumferential direction, for supporting the inner ring 5 of the pressure ring through the overlapping portion 51 .
  • the inner ring 5 of the pressure ring falls on the outer ring 2 of the pressure ring through the lap joint 51 , and the protrusions 22 on the outer ring 2 of the pressure ring are in contact with the inner ring 5 of the pressure ring the lower surface of the overlapping portion 51.
  • the protrusion 22 is a cylinder, and the cross section of the protrusion 22 parallel to the upper surface of the outer ring 2 of the pressing ring may be circular.
  • the number of protrusions 22 is three.
  • the lower surface of the outer peripheral edge of the outer ring 2 of the pressing ring is provided with a second annular groove 23 , one end of the shielding member 1 is fixed to the inner wall of the reaction chamber, and the other end of the shielding member 1 has a second annular groove 23 .
  • the annular bending portion 11 with opposite opening directions, as shown in FIG. 5 the annular bending portion 11 includes a first sub-bending portion 11a extending from the lower end of the shielding member 1 to the inner side of the shielding member 1, and a first sub-bending portion 11a extending from the lower end of the shielding member 1 to the inner side of the shielding member 1.
  • One end of the bent portion 11a away from the shielding member 1 is a second sub-bent portion 11b bent upward, wherein the second sub-bent portion 11b is located in the second annular groove 23, and the second sub-bent portion 11b is far away from the first sub-bend portion 11b.
  • One end of the sub-bending part 11a is in contact with the groove bottom of the second annular groove 23 for supporting the outer ring 2 of the pressing ring; the surfaces of the first sub-bending part 11a and the outer ring 2 of the pressing ring are arranged at intervals;
  • the bent portions 11b are located between the outer peripheral wall and the inner peripheral wall of the second annular groove 23 at intervals. In this way, the outer ring 2 of the pressing ring and the shielding member 1 cooperate with the annular bending portion through the second annular groove 23 to form a labyrinth structure.
  • the opening of the second annular groove 23 faces downward, and the shielding member 1, the first sub-bending portion 11a and the second sub-bending portion 11b together form an annular groove structure with a “U” shape in cross section, and the annular The opening of the groove structure is upward, and the annular groove structure and the above-mentioned second annular groove 23 are inserted into each other to form a labyrinth structure.
  • the second annular groove 23 is in contact with the top end of the second sub-bending portion 11b due to its own weight, so as to prevent the plasma from falling to the bottom of the reaction chamber.
  • the inner peripheral wall of the outer ring 2 of the pressing ring is provided with a plurality of notches 24 spaced along the circumferential direction of the outer ring
  • the number of the notches 24 is the same as the number of the bosses 53
  • the notches 24 are matched with the bosses 53 in a one-to-one correspondence.
  • the cooperation between the notch 24 and the boss 53 makes the two have a positioning relationship, and the inner ring 5 of the pressure ring can only be moved up and down, so as to prevent the inner ring 5 of the pressure ring from rotating relative to the outer ring 2 of the pressure ring.
  • the shape of the notch 24 is a semicircle, and the boss 53 has a shape matching the notch. It should be noted that, in practical applications, the notch 24 may also be provided on the outer peripheral wall of the inner ring main body 52 , and the boss 53 may be provided on the inner peripheral wall of the outer ring 2 of the pressure ring.
  • the matching manner of the notch 24 and the boss 53 is, for example, snap connection or plug connection.
  • the number of the notches 24 and the bosses 53 is three.
  • an annular flange 31 is provided on the outer periphery of the bearing device 3
  • an annular first inclined surface 311 is provided on the outer periphery of the annular flange 31
  • the diameter of the first inclined surface 311 is from top to bottom.
  • the lower surface of the outer ring 2 of the pressure ring is provided with a base hole 25 that is concentric with the outer ring 2 of the pressure ring
  • the hole wall of the base hole 25 includes a second inclined surface 251
  • the diameter of the second inclined surface 251 increases from top to bottom
  • the carrying device 3 can enter into the base hole 25 during the ascending process, and the second inclined surface 251 can fit with the first inclined surface 311 .
  • the carrying device 3 can be concentric with the outer ring 2 of the pressing ring when it ascends to the process position.
  • the annular flange 31 and the carrying device 3 may be an integral structure or a separate structure.
  • the annular flange 31 and the carrying device 3 are fixedly connected by screws.
  • the hole wall of the base hole 25 further includes an annular vertical surface 252 , which is located below the above-mentioned second inclined surface 251 , and the diameter of the vertical surface 252 is equal to the above-mentioned The maximum diameter of the second inclined surface 251 .
  • the bottom of the base hole 25 is provided with a plurality of positioning holes 26 spaced along its circumferential direction
  • the annular flange 31 is provided with a plurality of positioning pins 32 corresponding to the positioning holes 26 one-to-one
  • the positioning holes 26 are used for supporting the bearing Locating pin 32 on device 3.
  • the number of the positioning pins 32 is the same as the number of the positioning holes 26 , and during the ascending process of the carrying device 3 , each positioning pin 32 moves into each positioning hole 26 in a one-to-one correspondence.
  • the positioning holes 26 may also be arranged on the annular flange 31 , and the positioning pins 32 are arranged at the bottom of the base holes 25 .
  • the number of positioning holes 26 is three.
  • the carrying device 3 includes a disc-shaped body, and the above-mentioned annular flange 31 protrudes relative to the outer peripheral surface of the disc-shaped body, that is, the diameter of the outer peripheral surface of the annular flange 31 is larger than that of the disc-shaped body. The diameter of the outer peripheral surface.
  • the upper surface of the carrying device 3 is provided with an annular raised portion 33 , and the outer peripheral wall of the raised portion 33 includes an annular third inclined surface 331 ; the diameter of the third inclined surface 331 is The lower surface of the inner ring 5 of the pressure ring is provided with a third annular groove 54, the outer peripheral wall of the third annular groove 54 includes an annular fourth inclined surface 541, and the diameter of the fourth inclined surface 541 increases from top to bottom;
  • the protruding portion 33 moves into the third annular groove 54 , and the fourth inclined surface 541 can fit with the third inclined surface 331 .
  • the carrying device 3 can be concentric with the inner ring 5 of the pressing ring when it ascends to the process position.
  • the center of the inner ring main body 52 of the pressing ring inner ring 5 is provided with a through hole penetrating the inner ring main body along its axial direction, and a plurality of pressing claws 55 spaced along the circumferential direction are arranged on the hole wall of the through hole, for When the carrier device is raised to the processing position, it is pressed against the edge region of the upper surface of the wafer 4 .
  • the plurality of pressing claws 55 are evenly distributed along the circumferential direction of the through hole.
  • the number of the pressing claws 55 is eight.
  • the material of the pressure ring inner ring 5 and the pressure ring outer ring 2 is titanium.
  • the carrier device 3 when the carrier device 3 is lower than the process position (for example, at the transfer position), the outer ring 2 of the pressing ring is supported by the shielding member 1, and the inner ring 5 of the pressing ring overlaps
  • the connecting portion 51 is stacked on the outer ring 2 of the pressing ring, and the protrusions 22 of the outer ring 2 of the pressing ring are in contact with the lower surface of the overlapping portion 51 of the inner ring 5 of the pressing ring, and the wafer 4 to be processed is transported.
  • the carrier device 3 After the carrier device 3 is placed on the carrier device 3, the carrier device 3 is raised from the transfer sheet position to the process position to perform the semiconductor process on the wafer 4.
  • the annular flange 31 on the outer periphery of the carrier device 3 lifts the outer ring of the pressure ring. 2.
  • the inner ring 5 of the pressure ring falls on the wafer 4, so that the wafer 4 is pressed by the inner ring 5 of the pressure ring;
  • the carrier device 3 When the carrier device 3 continues to lift the wafer 4 to the process position, the inner ring body of the inner ring 5 of the pressing ring is held up by the carrier device 3, and a gap ⁇ is formed between the carrier device 3 and the protrusion 22 of the outer ring 2 of the pressing ring.
  • the overlap portion 51 is separated from the outer ring 2 of the pressure ring, the weight of the inner ring 2 of the pressure ring is completely pressed on the wafer 4 .
  • the weight under pressure is only the weight of the inner ring of the pressure ring. Compared with the weight of the entire mechanical pressure ring acting on the wafer, the weight is reduced by about a quarter.
  • the wafer is mechanically pressed by the ring. The risk of crushing is greatly reduced, the material and weight of the outer ring of the pressure ring will not affect the wafer, and the shape of the inner ring of the pressure ring is easy to design to ensure the appropriate size to press the wafer.
  • the reaction chamber for semiconductor processing involved in the present disclosure can be adapted to the occasions where thin sheets (with a thickness of 100-500 microns) need to be pressed, and can be used in semiconductor packaging PVD equipment, and can also be applied in other IC PVD equipment, and can Applicable to 8" chamber, 12" chamber, 8"/12" compatible PVD chamber.

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Abstract

本公开提供一种用于进行半导体工艺的反应腔室，包括环绕设置在所述反应腔室内壁内侧的遮蔽件、用于承载晶圆且能够升降的承载装置，还包括：用于在承载装置位于工艺位置时将晶圆固定在承载装置上的机械压环，机械压环包括压环内环和压环外环；其中，压环外环环绕设置于遮蔽件内侧，且在承载装置低于工艺位置时，压环外环由遮蔽件支撑；压环内环包括内环主体和与内环主体连接，且位于内环主体的外周的搭接部，其中，在承载装置低于工艺位置时，搭接部叠置于压环外环上；在承载装置上升至工艺位置时，搭接部与压环外环相分离，且内环主体压在晶圆上表面的边缘区域上。本公开中，能够降低晶圆被压碎的风险。

Description

用于进行半导体工艺的反应腔室 技术领域
本公开属于半导体技术领域，更具体地，涉及一种用于进行半导体工艺的反应腔室。
背景技术
物理气相沉积(Physical Vapor Deposition，PVD)方法，是集成电路制造过程中沉积金属层和相关材料广泛采用的方法之一。目前硅通孔(Through SiliconVia，TSV)技术的应用越来越广泛，该技术大大降低了芯片之间的互连延迟，并且是三维集成实现的关键技术。PVD在TSV中的应用主要是在硅通孔内部沉积阻挡层和铜籽晶层。在诸如硅通孔的磁控溅射等的PVD工艺中，晶圆(例如硅片)通常被放置在基座上，并在基座上升至工艺位置时，采用机械压环(clamp ring)对晶圆进行固定，以防止晶圆在工艺过程中发成位移。
现有技术中，机械压环尺寸及重量过大，可能会导致晶圆被压碎，而且机械压环的壁厚已经很薄无法通过减薄来降低重量。
发明内容
本公开的目的是提供一种用于进行半导体工艺的反应腔室，能够降低晶圆被压碎的风险。
为了实现上述目的，本公开提供一种用于进行半导体工艺的反应腔室，包括环绕设置在所述反应腔室内壁内侧的遮蔽件、用于承载晶圆且能够升降的承载装置，还包括：用于在所述承载装置位于工艺位置时将所述晶圆固定在所述承载装置上的机械压环，所述机械压环包括压环内环和压环外环；其 中，
所述压环外环环绕设置于所述遮蔽件内侧，且在所述承载装置低于所述工艺位置时，所述压环外环由所述遮蔽件支撑；
所述压环内环包括内环主体和与所述内环主体连接，且位于所述内环主体的外周的搭接部，其中，在所述承载装置低于所述工艺位置时，所述搭接部叠置于所述压环外环上；在所述承载装置上升至所述工艺位置时，所述搭接部与所述压环外环相分离，且所述内环主体压在所述晶圆上表面的边缘区域上。
优选地，所述压环外环的内周边缘的上表面设有沿其周向环绕的第一环形槽，所述搭接部的边缘遮蔽部分所述第一环形槽。
优选地，所述压环外环的上表面设有沿其周向间隔分布的多个凸起，用于支撑所述搭接部。
优选地，所述压环外环的外周边缘下表面设有第二环形槽，所述遮蔽件的一端固定于所述反应腔室的内壁，所述遮蔽件的另一端具有与所述第二环形槽开口方向相反的环形弯折部，所述环形弯折部包括自所述遮蔽件的下端向所述遮蔽件的内侧延伸的第一子弯折部，和自所述第一子弯折部远离所述遮蔽件的一端向上弯折的第二子弯折部，其中，
所述第二子弯折部位于所述第二环形槽中，且所述第二子弯折部远离所述第一子弯折部的一端与所述第二环形槽的槽底接触，用于支撑所述压环外环；
所述第一子弯折部与所述压环外环彼此相对的表面间隔设置；所述第二子弯折部间隔地位于所述第二环形槽的外周壁和内周壁之间。
优选地，所述压环外环的内周壁和所述内环主体的外周壁中的一者上设有沿所述压环外环的周向间隔设置的多个缺口，所述压环外环的内周壁和所述内环主体的外周壁中的另一者上设有沿所述压环外环的周向间隔设置的多 个凸台，所述缺口的数量与所述凸台的数量相同，且各所述缺口一一对应地与各所述凸台相配合。
优选地，所述缺口的形状包括弧形、半圆形或矩形中的任意一种或组合；所述凸台具有与对应所述缺口相匹配的形状。
优选地，所述承载装置为圆盘形，所述承载装置的外周设有沿径向向外伸出的环形凸缘，所述环形凸缘的外周设有环形的第一斜面，所述第一斜面的直径由上而下递增；
所述压环外环的下表面设有与所述压环外环同心的基座孔，所述基座孔的孔壁包括第二斜面，所述第二斜面的直径由上而下递增，所述承载装置在上升过程中能够进入所述基座孔内，且所述第二斜面能够与所述第一斜面相贴合。
优选地，所述基座孔的孔底和所述环形凸缘中的一者设有沿其周向间隔分布的多个定位孔，所述基座孔的孔底和所述环形凸缘中的另一者设有沿其周向间隔分布的多个定位销，所述定位销的数量与所述定位孔的数量相同，且在所述承载装置上升过程中，各所述定位销一一对应地移入各所述定位孔中。
优选地，所述承载装置的上表面设有环形的凸起部，所述凸起部的外周壁设有环形的第二斜面；
所述压环内环的下表面设有第三环形槽，所述第三环形槽的外周壁
包括环形的第三斜面，所述第三斜面的直径由上而下递增；所述压环内环的下表面设有第三环形槽，所述第三环形槽的外周壁包括环形的第四斜面，所述第四斜面的直径由上而下递增；
在所述承载装置上升过程中，所述凸起部移入所述第三环形槽内，且所述第四斜面能够与所述第三斜面相贴合。
优选地，所述内环主体的中心设有沿其轴向贯通所述内环主体的通孔， 所述通孔的孔壁上设有沿其周向间隔设置的多个压爪，用于在所述承载装置上升至所述工艺位置时，压在所述晶圆上表面的边缘区域上。
本公开涉及的用于进行半导体工艺的反应腔室，其有益效果在于，机械压环采用由压环内环和压环外环组成的分体式结构，在承载装置低于工艺位置时，该压环外环由遮蔽件支撑，而压环内环的搭接部叠置于压环外环上；在承载装置上升至工艺位置时，压环内环的内环主体被承载装置顶起，此时内环主体依靠自身重力压在晶圆上表面的边缘区域上，且搭接部与压环外环相分离，由于只有压环内环作用于晶圆，这与现有技术中整个机械压环的重量作用于晶圆相比，可以在压住晶圆防止其工艺过程中发成位移的同时，减少直接作用于晶圆上的重量，使晶圆被压碎的风险大大降低，尤其能够适应薄片需要被压的场合，并且适用于半导体封装PVD设备中和其他IC PVD设备。
本公开的其它特征和优点将在随后具体实施方式部分予以详细说明。
附图说明
通过结合附图对本公开示例性实施方式进行更详细的描述，本公开的上述以及其它目的、特征和优势将变得更加明显，其中，在本公开示例性实施方式中，相同的参考标号通常代表相同部件。
图1示出了根据本公开的一个实施例的反应腔室的承载装置低于工艺位置时的状态示意图；
图2示出了根据本公开的一个实施例的反应腔室的承载装置位于工艺位置时的状态示意图；
图3示出了根据本公开的示例性实施例的压环外环的结构示意图；
图4示出了根据本公开的示例性实施例的压环内环的结构示意图；
图5示出了根据本公开的示例性实施例的压环外环与压环内环连接处的局部示意图；
图6示出了图5中A处的放大示意图；
图7示出了根据本公开的示例性实施例的反应腔室的承载装置位于工艺位置时压环内环与压环外环处于分离状态的局部示意图；
图8示出了图7中的局部放大示意图；
附图标记说明：
1、遮蔽件，11、环形弯折部，11a、第一子弯折部，11b、第二子弯折部，2、压环外环，21、第一环形槽，22、凸起，23、第二环形槽，24、缺口，25、基座孔，251、第二斜面，252、竖直面，26、定位孔，3、承载装置，31、环形凸缘，311、第一斜面，32、定位销，33、凸起部，331、第三斜面，4、晶圆，5、压环内环，51、搭接部，52、内环主体，53、凸台，54、第三环形槽，541、第四斜面，55、压爪。
具体实施方式
下面将更详细地描述本公开的优选实施方式。虽然以下描述了本公开的优选实施方式，然而应该理解，可以以各种形式实现本公开而不应被这里阐述的实施方式所限制。相反，提供这些实施方式是为了使本公开更加透彻和完整，并且能够将本公开的范围完整地传达给本领域的技术人员。
为解决现有技术存在的问题，本公开提供了一种用于进行半导体工艺的反应腔室，包括环绕设置在反应腔室内侧的遮蔽件、用于承载晶圆且能够升降的承载装置。还包括：用于在承载装置位于工艺位置时将晶圆固定在承载装置上的机械压环。在承载装置位于工艺位置时，可以对置于承载装置上的晶圆进行半导体工艺。
该机械压环包括压环内环和压环外环；其中，压环外环环绕设置于遮蔽件内侧，且在承载装置低于上述工艺位置时，压环外环由遮蔽件支撑；
压环内环包括内环主体和与该内环主体连接，且位于内环主体的外周的 搭接部，其中，在承载装置低于上述工艺位置时，搭接部叠置于压环外环上；在承载装置上升至上述工艺位置时，搭接部与压环外环相分离，且内环主体压在晶圆上表面的边缘区域上。
本公开涉及的用于进行半导体工艺的反应腔室，机械压环采用由压环内环和压环外环组成的分体式结构，在承载装置低于所述工艺位置时，该压环外环由遮蔽件支撑，而压环内环的搭接部叠置于压环外环上；在承载装置上升至工艺位置时，压环内环的内环主体被承载装置顶起，此时内环主体依靠自身重力压在晶圆上表面的边缘区域上，且搭接部与压环外环相分离，由于只有压环内环作用于晶圆，这与现有技术中整个机械压环的重量作用于晶圆相比，可以在压住晶圆防止其工艺过程中发成位移的同时，减少直接作用于晶圆的重量，使晶圆被压碎的风险大大降低，尤其能够适应薄片需要被压的场合，并且适用于半导体封装PVD设备中和其他IC PVD设备。
在承载装置上升至工艺位置的过程中，承载装置会单独托起压环内环，使压环内环与压环外环脱离，此时压环外环的重量作用于遮蔽件上，晶圆只承受压环内环的重量，从而减少了直接作用于晶圆的重量，使晶圆被机械压环压碎的风险大大降低。
优选地，压环外环内周边缘的上表面设有沿其周向环绕的第一环形槽，搭接部的边缘遮蔽部分第一环形槽。这样，搭接部的边缘处因第一环形槽的存在而不与压环外环接触，从而可以防止金属粒子溅射到搭接部的边缘后与压环外环粘接起来造成颗粒产生。
优选地，压环外环的上表面设有沿其周向间隔分布的多个凸起，用于支撑搭接部。在承载装置自工艺位置下降的过程中，压环内环通过搭接部落于压环外环上，此时压环外环上的凸起接触贴合于压环内环的搭接部的下表面，具有支撑作用。
优选地，凸起为柱体，凸起在平行于压环外环的上表面的横截面为圆形、 矩形或三角形。
优选地，压环外环的外周边缘下表面设有第二环形槽，遮蔽件的一端固定于反应腔室的内壁，遮蔽件的另一端具有与第二环形槽开口方向相反的环形弯折部，该环形弯折部包括自遮蔽件的下端向遮蔽件的内侧延伸的第一子弯折部，和自第一子弯折部远离遮蔽件的一端向上弯折的第二子弯折部，其中，第二子弯折部位于上述第二环形槽中，第二子弯折部远离第一子弯折部的一端与第二环形槽的槽底接触，用于支撑压环外环；第一子弯折部与压环外环彼此相对的表面间隔设置；第二子弯折部间隔地位于第二环形槽的外周壁和内周壁之间。这样，压环外环与遮蔽件通过第二环形槽与环形弯折部相配合形成迷宫结构。
具体来说，第二环形槽的开口朝下，而遮蔽件、第一子弯折部与第二子弯折部共同构成截面为“U”形的环形槽结构，且该环形槽结构的开口朝上，该环形槽结构与上述第二环形槽相互插接以形成迷宫结构。第二环形槽由于自重与第二子弯折部的顶端接触贴合，以防止等离子体落到反应腔室底部。
优选地，压环外环的内周壁和内环主体的外周壁中的一者上设有沿压环外环的周向间隔设置的多个缺口，压环外环的内周壁和内环主体的外周壁中的另一者上设有沿压环外环的周向间隔设置的多个凸台，缺口的数量与凸台的数量相同，且各缺口一一对应地与各凸台相配合。在承载装置自工艺位置下降的过程中，压环内环通过搭接部落于压环外环上，同时各凸台沿下落方向落入对应的缺口内，缺口与凸台的配合使得两者具有定位关系，约束压环内环只能够上下运动，防止压环内环相对于压环外环旋转。
优选地，缺口的形状包括弧形、半圆形或矩形中的任意一种或组合，凸台具有与对应的缺口相匹配的形状，以实现定位作用。可选地，缺口贯穿至压环外环的上表面和下表面。
优选地，承载装置的外周设有环形凸缘，该环形凸缘的外周设有环形的 第一斜面，该第一斜面的直径由上而下递增；
压环外环的下表面设有与压环外环同心的基座孔，基座孔的孔壁包括第二斜面，该第二斜面的直径由上而下递增，承载装置在上升过程中能够进入基座孔内，且上述第二斜面能够与第一斜面相贴合。在承载装置上升的过程中，通过使第一斜面沿第二斜面贴合滑动，可以使承载装置在上升至工艺位置时能够与压环外环同心。
优选地，基座孔的孔底和环形凸缘中的一者设有沿其周向间隔分布的多个定位孔，基座孔的孔底和环形凸缘中的另一者设有沿其周向间隔分布的多个定位销，定位销的数量与定位孔的数量相同，且在承载装置上升过程中，各定位销一一对应地移入各定位孔中。定位孔用于配合承载装置上的销，销与定位孔配合起定位作用，避免压环外环和承载装置之间发生旋转。
优选地，承载装置的上表面设有环形的凸起部，凸起部的外周壁包括环形的第三斜面；第三斜面的直径由上而下递增；
压环内环的下表面设有第三环形槽，第三环形槽的外周壁包括环形的第四斜面，第四斜面的直径由上而下递增；在承载装置上升过程中，凸起部移入第三环形槽内，且第四斜面能够与第三斜面相贴合。在承载装置上升过程中，通过使第三斜面沿第四斜面贴合滑动，可以使承载装置在上升至工艺位置时能够与压环内环同心。
优选地，内环主体的中心设有沿其轴向贯通内环主体的通孔，通孔的孔壁上设有沿其周向间隔设置的多个压爪，用于在承载装置上升至工艺位置时，压在晶圆上表面的边缘区域上。可选的，多个压爪沿上述通孔的周向均布。
优选地，压环内环与压环外环的材质为钛，也可以采用其他金属材质如不锈钢、铝等，也可以采用非金属材质如陶瓷，陶瓷例如为Al2O3。
本公开涉及的用于进行半导体工艺的反应腔室，在承载装置低于工艺位置(例如位于传片位置)时，压环外环由遮蔽件支撑，而压环内环的搭接部 叠置于压环外环上，且压环外环的凸起接触贴合于压环内环的搭接部的下表面，在将待加工的晶圆传输至承载装置上之后，使承载装置自传片位置上升至工艺位置对晶圆进行半导体工艺，在承载装置上升过程中，承载装置的外周的环形凸缘托起压环外环，此时压环内环落在晶圆上，使得晶圆被压环内环压住；
当承载装置继续带着晶圆上升至工艺位置时，压环内环的内环主体被承载装置托起，并与压环外环的凸起之间形成间隙Δ，此时，搭接部与压环外环相分离，压环内环的重量完全压在晶圆上。
晶圆在进行工艺时，受压重量仅为压环内环的重量，这与整个机械压环的重量作用于晶圆相比，减少了四分之一左右的重量，晶圆被机械压环压碎的风险大大降低，压环外环的材质及重量都不会影响晶圆，压环内环的形状容易设计，以保证合适的尺寸去压晶圆。本公开涉及的用于进行半导体工艺的反应腔室能够适应薄片(厚度在100-500微米)需要被压的场合，应用于半导体封装PVD设备中，也可以应用于其他IC PVD设备中，并且能够应用于8英寸腔室，12英寸腔室，8寸/12寸兼容的PVD腔室。
实施例1
如图1至图8所示，本公开提供了一种用于进行半导体工艺的反应腔室，包括环绕设置在反应腔室内侧的遮蔽件1、用于承载晶圆4且能够升降的承载装置3和用于在承载装置3位于工艺位置时将晶圆4固定在承载装置3上的机械压环。承载装置3在上述工艺位置可以对置于其上的晶圆4进行半导体工艺。
该机械压环包括压环内环5和压环外环2；其中，压环外环2环绕设置于遮蔽件1内侧，且在承载装置3低于上述工艺位置时，压环外环2由遮蔽件1支撑。
压环内环5包括内环主体52和与该内环主体52连接，且位于内环主体52的外周的搭接部51，其中，在承载装置3低于上述工艺位置时，搭接部51叠置于压环外环2上；在承载装置3上升至上述工艺位置的过程中承载装置3能够上升以将压环内环5顶起，带动搭接部51脱离压环外环2，以使压环内环5压在晶圆4上表面的边缘区域上。
在本实施例中，压环外环2的内周边缘的上表面设有沿其周向环绕的第一环形槽21，搭接部51的边缘遮蔽部分第一环形槽21。
压环外环2的上表面设有沿其周向间隔分布的多个凸起22，用于通过搭接部51支撑压环内环5。在承载装置3自工艺位置下降的过程中，压环内环5通过搭接部51落于压环外环2上，压环外环2上的凸起22接触贴合于压环内环5的搭接部51的下表面。凸起22为柱体，凸起22在平行于压环外环2的上表面的横截面可以为圆形。
在实施例中，凸起22的数量为三个。
在本实施例中，压环外环2的外周边缘下表面设有第二环形槽23，遮蔽件1的一端固定于反应腔室的内壁，遮蔽件1的另一端具有与第二环形槽23开口方向相反的环形弯折部11，如图5所示，该环形弯折部11包括自遮蔽件1的下端向遮蔽件1的内侧延伸的第一子弯折部11a，和自第一子弯折部11a远离遮蔽件1的一端向上弯折的第二子弯折部11b，其中，第二子弯折部11b位于上述第二环形槽23中，第二子弯折部11b远离第一子弯折部11a的一端与第二环形槽23的槽底接触，用于支撑压环外环2；第一子弯折部11a与压环外环2彼此相对的表面间隔设置；第二子弯折部11b间隔地位于第二环形槽23的外周壁和内周壁之间。这样，压环外环2与遮蔽件1通过第二环形槽23与环形弯折部相配合形成迷宫结构。
具体来说，第二环形槽23的开口朝下，而遮蔽件1、第一子弯折部11a与第二子弯折部11b共同构成截面为“U”形的环形槽结构，且该环形槽结 构的开口朝上，该环形槽结构与上述第二环形槽23相互插接以形成迷宫结构。第二环形槽23由于自重与第二子弯折部11b的顶端接触贴合，以防止等离子体落到反应腔室底部。
压环外环2的内周壁上设有沿压环外环2的周向间隔设置的多个缺口24，内环主体52的外周壁上设有沿压环外环2的周向间隔设置的多个凸台53，缺口24的数量与凸台53的数量相同，且各缺口24一一对应地与各凸台53相配合。使用时，在承载装置自工艺位置下降的过程中，压环内环5通过搭接部51落于压环外环2上，同时各凸台53沿下落方向落入对应的缺口24内。缺口24与凸台53的配合使得两者具有定位关系，约束压环内环5只能够上下运动，防止压环内环5相对于压环外环2旋转。缺口24的形状为半圆形，凸台53具有与缺口相匹配的形状。需要说明的是，在实际应用中，也可以将缺口24设置于内环主体52的外周壁，并将凸台53设置于压环外环2的内周壁。
在实际应用中，缺口24与凸台53的配合方式例如为卡接或者插接等等。
在本实施例中，缺口24和凸台53的数量均为三个。
在本实施例中，如图8所示，承载装置3的外周设有环形凸缘31，环形凸缘31的外周设有环形的第一斜面311，该第一斜面311的直径由上而下递增；压环外环2的下表面设有与压环外环2同心的基座孔25，基座孔25的孔壁包括第二斜面251，该第二斜面251的直径由上而下递增，承载装置3在上升过程中能够进入基座孔25内，且上述第二斜面251能够与第一斜面311相贴合。在承载装置3上升的过程中，通过使第一斜面311沿第二斜面251贴合滑动，可以使承载装置3在上升至工艺位置时能够与压环外环2同心。环形凸缘31与承载装置3可以是一体结构或者分体结构，对于分体结构，环形凸缘31与承载装置3通过螺钉固定连接。
在一些可选的实施例中，如图7所示，基座孔25的孔壁还包括环形的 竖直面252，其位于上述第二斜面251的下方，且竖直面252的直径等于上述第二斜面251的最大直径。
基座孔25的孔底设有沿其周向间隔分布的多个定位孔26，环形凸缘31上设置有多个与定位孔26一一对应的定位销32，定位孔26用于配合承载装置3上的定位销32。定位销32的数量与定位孔26的数量相同，且在承载装置3上升过程中，各定位销32一一对应地移入各定位孔26中。需要说明的是，在实际应用中，定位孔26也可以设置于环形凸缘31上，定位销32设置于基座孔25的孔底。
在本实施例中，定位孔26的数量为三个。
在本实施例中，承载装置3包括圆盘形主体，上述环形凸缘31相对于该圆盘形主体的外周面凸出，即，环形凸缘31的外周面的直径大于圆盘形主体的外周面的直径。
在本实施例中，如图8所示，承载装置3的上表面设有环形的凸起部33，凸起部33的外周壁包括环形的第三斜面331；第三斜面331的直径由上而下递增；压环内环5的下表面设有第三环形槽54，第三环形槽54的外周壁包括环形的第四斜面541，第四斜面541的直径由上而下递增；在承载装置3上升过程中，凸起部33移入第三环形槽54内，且第四斜面541能够与第三斜面331相贴合。在承载装置3上升过程中，通过使第三斜面331沿第四斜面541贴合滑动，可以使承载装置3在上升至工艺位置时能够与压环内环5同心。
压环内环5的内环主体52的中心设有沿其轴向贯通内环主体的通孔，通孔的孔壁上设有沿其周向间隔设置的多个压爪55，用于在承载装置上升至工艺位置时，压在晶圆4上表面的边缘区域上。可选的，多个压爪55沿通孔的周向均布。
在本实施例中，压爪55的数量为八个。
压环内环5与压环外环2的材质为钛。
本公开涉及的用于进行半导体工艺的反应腔室，在承载装置3低于工艺位置(例如位于传片位置)时，压环外环2由遮蔽件1支撑，而压环内环5的搭接部51叠置于压环外环2上，且压环外环2的凸起22接触贴合于压环内环5的搭接部51的下表面，在将待加工的晶圆4传输至承载装置3上之后，使承载装置3自传片位置上升至工艺位置对晶圆4进行半导体工艺，在承载装置3上升过程中，承载装置3的外周的环形凸缘31托起压环外环2，此时压环内环5落在晶圆4上，使得晶圆4被压环内环5压住；
当承载装置3继续带着晶圆4上升至工艺位置时，压环内环5的内环主体被承载装置3托起，并与压环外环2的凸起22之间形成间隙Δ，此时，搭接部51与压环外环2相分离，压环内环2的重量完全压在晶圆4上。
晶圆在进行工艺时，受压重量仅为压环内环的重量，这与整个机械压环的重量作用于晶圆相比，减少了四分之一左右的重量，晶圆被机械压环压碎的风险大大降低，压环外环的材质及重量都不会影响晶圆，压环内环的形状容易设计，以保证合适的尺寸去压晶圆。本公开涉及的用于进行半导体工艺的反应腔室能够适应薄片(厚度在100-500微米)需要被压的场合，应用于半导体封装PVD设备中，也可以应用于其他IC PVD设备中，并且能够应用于8英寸腔室，12英寸腔室，8寸/12寸兼容的PVD腔室。
以上已经描述了本公开的各实施例，上述说明是示例性的，并非穷尽性的，并且也不限于所披露的各实施例。在不偏离所说明的各实施例的范围和精神的情况下，对于本技术领域的普通技术人员来说许多修改和变更都是显而易见的。

Claims (10)

  1. 一种用于进行半导体工艺的反应腔室，包括环绕设置在所述反应腔室内壁内侧的遮蔽件、用于承载晶圆且能够升降的承载装置，其特征在于，还包括：用于在所述承载装置位于工艺位置时将所述晶圆固定在所述承载装置上的机械压环，所述机械压环包括压环内环和压环外环；其中，
    所述压环外环环绕设置于所述遮蔽件内侧，且在所述承载装置低于所述工艺位置时，所述压环外环由所述遮蔽件支撑；
    所述压环内环包括内环主体和与所述内环主体连接，且位于所述内环主体的外周的搭接部，其中，在所述承载装置低于所述工艺位置时，所述搭接部叠置于所述压环外环上；在所述承载装置上升至所述工艺位置时，所述搭接部与所述压环外环相分离，且所述内环主体压在所述晶圆上表面的边缘区域上。
  2. 根据权利要求1所述的用于进行半导体工艺的反应腔室，其特征在于，所述压环外环内周边缘的上表面设有沿其周向环绕的第一环形槽，所述搭接部的边缘遮蔽部分所述第一环形槽。
  3. 根据权利要求1或2所述的用于进行半导体工艺的反应腔室，其特征在于，所述压环外环的上表面设有沿其周向间隔分布的多个凸起，用于支撑所述搭接部。
  4. 根据权利要求1所述的用于进行半导体工艺的反应腔室，其特征在于，所述压环外环的外周边缘下表面设有第二环形槽，所述遮蔽件的一端固定于所述反应腔室的内壁，所述遮蔽件的另一端具有与所述第二环形槽开口方向相反的环形弯折部，所述环形弯折部包括自所述遮蔽件的下端向所述遮蔽件的内侧延伸的第一子弯折部，和自所述第一子弯折部远离所述遮蔽件的 一端向上弯折的第二子弯折部，其中，
    所述第二子弯折部位于所述第二环形槽中，且所述第二子弯折部远离所述第一子弯折部的一端与所述第二环形槽的槽底接触，用于支撑所述压环外环；
    所述第一子弯折部与所述压环外环彼此相对的表面间隔设置；所述第二子弯折部间隔地位于所述第二环形槽的外周壁和内周壁之间。
  5. 根据权利要求1所述的用于进行半导体工艺的反应腔室，其特征在于，所述压环外环的内周壁和所述内环主体的外周壁中的一者上设有沿所述压环外环的周向间隔设置的多个缺口，所述压环外环的内周壁和所述内环主体的外周壁中的另一者上设有沿所述压环外环的周向间隔设置的多个凸台，所述缺口的数量与所述凸台的数量相同，且各所述缺口一一对应地与各所述凸台相配合。
  6. 根据权利要求5所述的用于进行半导体工艺的反应腔室，其特征在于，所述缺口的形状包括弧形、半圆形或矩形中的任意一种或组合；所述凸台具有与对应所述缺口相匹配的形状。
  7. 根据权利要求1所述的用于进行半导体工艺的反应腔室，其特征在于，所述承载装置的外周设有环形凸缘，所述环形凸缘的外周设有环形的第一斜面，所述第一斜面的直径由上而下递增；
    所述压环外环的下表面设有与所述压环外环同心的基座孔，所述基座孔的孔壁包括第二斜面，所述第二斜面的直径由上而下递增，所述承载装置在上升过程中能够进入所述基座孔内，且所述第二斜面能够与所述第一斜面相贴合。
  8. 根据权利要求7所述的用于进行半导体工艺的反应腔室，其特征在 于，所述基座孔的孔底和所述环形凸缘中的一者设有沿其周向间隔分布的多个定位孔，所述基座孔的孔底和所述环形凸缘中的另一者设有沿其周向间隔分布的多个定位销，所述定位销的数量与所述定位孔的数量相同，且在所述承载装置上升过程中，各所述定位销一一对应地移入各所述定位孔中。
  9. 根据权利要求1所述的用于进行半导体工艺的反应腔室，其特征在于，所述承载装置的上表面设有环形的凸起部，所述凸起部的外周壁包括环形的第三斜面，所述第三斜面的直径由上而下递增；所述压环内环的下表面设有第三环形槽，所述第三环形槽的外周壁包括环形的第四斜面，所述第四斜面的直径由上而下递增；
    在所述承载装置上升过程中，所述凸起部移入所述第三环形槽内，且所述第四斜面能够与所述第三斜面相贴合。
  10. 根据权利要求1所述的用于进行半导体工艺的反应腔室，其特征在于，所述内环主体的中心设有沿其轴向贯通所述内环主体的通孔，所述通孔的孔壁上设有沿其周向间隔设置的多个压爪，用于在所述承载装置上升至所述工艺位置时，压在所述晶圆上表面的边缘区域上。
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