TWI532119B - 用於處理半導體底材之裝置 - Google Patents

用於處理半導體底材之裝置 Download PDF

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TWI532119B
TWI532119B TW102149204A TW102149204A TWI532119B TW I532119 B TWI532119 B TW I532119B TW 102149204 A TW102149204 A TW 102149204A TW 102149204 A TW102149204 A TW 102149204A TW I532119 B TWI532119 B TW I532119B
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rotating disk
edge
semiconductor substrate
edge ring
processing
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TW201436089A (zh
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謝志昌
林雍凱
劉旭水
羅凱
陳志評
詹錢昆
許中杰
張致國
蕭惟庭
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台灣積體電路製造股份有限公司
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    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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Description

用於處理半導體底材之裝置
本發明是有關於半導體製造,特別是有關於一種半導體製造器具及方法。
在半導體上或其他底材上之半導體裝置之製造需要多種分別的處理運作被執行於分別的製造器具之中。大部分之半導體製程係為一自動化製程。此包含了底材在製造器具內之移動與運送。此亦包含了裝載與卸載運作,關聯於製造設備之一特定部分。大量晶圓與個別底材之轉移通過製造區亦是一自動化機器人手臂操作。使用自動化程序去執行半導體製造器具之元件之清潔運作亦是被需要的,用以移除、操縱以及運送元件。
自動化裝載與卸載以及轉移運作之使用可以使處理一半導體底材、半導體底材之承載盒及製造器具之其他元件的次數最小化。
在一些運作之中,仍是必要的以人工方式裝載與卸載底材以及定位製造器具之元件。在MOCVD(金屬有機化學氣相沉積)以及許多其他運作之中,底材是被保持在快速旋轉之圓盤之上,以及圓盤無法被成型有任何透孔,因為入口及出口氣體是被傳送至旋轉圓盤之底側以及從旋轉圓盤之底側排出。由於圓盤無法具有任何透孔,故它們不包括有小孔用於接 收具有銷之自動底材轉移固持器。在許多系統之中,底材是緊貼地裝配於旋轉圓盤之外緣之內,其會使得從旋轉圓盤抽出底材變得困難的。就其本身而論,受到MOCVD(金屬有機化學氣相沉積)以及許多其他類似製程運作之底材必須以人工方式卸載。此乃是耗時的以及會產生污染。
有鑑於此,運送無法利用具有相鄰銷之轉移板被運送之底材之較好的方法是被需要的。
本發明基本上採用如下所詳述之特徵以為了要解決上述之問題。
本發明之一實施例提供一種用於處理半導體底材之裝置,包括一旋轉盤,係容納一半導體底材,並且具有一梯狀外邊緣,其中,該梯狀外邊緣具有一上邊緣部及一下邊緣部,該上邊緣部之一上外直徑係小於該下邊緣部之一下外直徑;一基座,係容納該旋轉盤;以及一邊緣環,係繞著該旋轉盤之一圓周周向延伸,並且係位於該下邊緣部之一上表面之上,其中,該邊緣環具有一水平表面及一垂直部,該水平表面係接收該半導體底材之一周緣,以及該垂直部係設置於該水平表面之外。
根據上述之實施例,該邊緣環具有一L形剖面,以及該旋轉盤具有一實心上表面。
根據上述之實施例,該旋轉盤之該梯狀外邊緣更具有一底部邊緣部,以及該底部邊緣部之一底部外直徑係大於該下外直徑。
根據上述之實施例,該用於處理半導體底材之裝置更包括一底材升起機器人葉片,其中,該底材升起機器人葉片具有一對起重手臂,以及該對起重手臂係藉由該下外直徑間隔開,並且係升起含有該半導體底材之該邊緣環。
根據上述之實施例,該邊緣環之該垂直部之一內直徑係實質上等於該半導體底材之一直徑。
根據上述之實施例,該半導體底材之一直徑係大於該旋轉盤之一上表面之一直徑。
根據上述之實施例,當該邊緣環係設置於該梯狀外邊緣之一周緣之上時,該邊緣環之該水平表面係實質上與該旋轉盤之一上表面共平面。
根據上述之實施例,該邊緣環之該垂直部係延伸於該旋轉盤之一上表面之上。
根據上述之實施例,該旋轉盤係位於一腔室之中,以及該腔室更包括一氣體入口接口,係位於該基座之中,並且係傳遞一入口氣體至該旋轉盤之一底側;一氣體出口接口,係設置於該旋轉盤及一真空系統之下,其中,該真空系統係從該基座排出氣體;以及一電漿產生系統,係提供提供一電漿至該腔室。
根據上述之實施例,該用於處理半導體底材之裝置包括一金屬有機化學氣相沉積裝置,以及該邊緣環係由碳化矽、石墨以及以碳化矽塗佈之石墨之一者所製成。
本發明之另一實施例提供一種用於處理半導體底材之裝置,包括一旋轉盤,係容納一半導體底材,並且具有一 梯狀外邊緣,其中,該梯狀外邊緣具有一上邊緣部、一中間邊緣部及一下邊緣部,該中間邊緣部之一中間外直徑係大於該上邊緣部之一上外直徑以及小於該下邊緣部之一下外直徑;一邊緣環,係設置於該中間邊緣部之一上表面之上,其中,該邊緣環具有實質上與該旋轉盤之一上表面共平面之一水平表面以及位於該水平表面外之一垂直部;一底材,設置於該邊緣環之該上表面及該水平表面之上,並且具有大於該上表面之一外直徑之一直徑;以及一晶圓葉片組件,具有至少兩底材升起葉片,其中,該等底材升起葉片係藉由實質上等於該中間外直徑之一距離間隔開。
根據上述之實施例,該用於處理半導體底材之裝置,更包括一處理室,具有一基座,其中,該基座係容納該旋轉盤及該邊緣環;一氣體入口接口,係位於該基座之中,並且係傳遞一入口氣體至該旋轉盤之一底側;以及一氣體出口接口,係設置於該旋轉盤及一真空系統之下,其中,該真空系統係從該基座經由該氣體出口接口排出氣體。
根據上述之實施例,該邊緣環具有一實質上L形剖面,以及該底材具有實質上等於該垂直部之一內直徑之一直徑。
根據上述之實施例,該用於處理半導體底材之裝置包括一金屬有機化學氣相沉積裝置,該邊緣環係由碳化矽、石墨以及以碳化矽塗佈之石墨之一者所製成,並且更包括具有複數個基座之一處理室,以及每一基座係容納該旋轉盤及該邊緣環。
本發明之又一實施例提供一種用於處理一半導體底材之方法,包括:提供一盤/邊緣環組件,其中,該盤/邊緣環組件包括具有一梯狀周緣之一盤,該梯狀周緣具有至少一上邊緣部及一下邊緣部,該上邊緣部之一上外直徑係小於該下邊緣部之一下外直徑,以及一邊緣環係設置於該下邊緣部之上,並且具有周向圍繞該盤/邊緣環組件之一外垂直部;設置一底材於該盤/邊緣環組件之上,以使得該底材位於該盤之一上表面之上,其中,該底材具有大於該上外直徑之一直徑;以及藉由插入位於該邊緣環下之複數個機器人葉片從該盤/邊緣環組件升起該底材以及以該底材之複數個周緣之該邊緣環升起該邊緣環。
根據上述之實施例,提供一盤/邊緣環組件之步驟包括:提供該盤/邊緣環組件於一金屬有機化學氣相沉積裝置之一凹入部之中。
根據上述之實施例,該盤係為一旋轉盤,並且更包括當沉積一薄膜於該底材之上時旋轉該盤。
根據上述之實施例,該用於處理一半導體底材之方法更包括:在該旋轉及該沉積過程中傳遞處理氣體至該旋轉盤之一底側。
根據上述之實施例,該用於處理一半導體底材之方法更包括該等機器人葉片運送具有該底材之該等周緣之該邊緣環。
為使本發明之上述目的、特徵和優點能更明顯易懂,下文特舉較佳實施例並配合所附圖式做詳細說明。
1‧‧‧基座
3、63‧‧‧旋轉盤
5‧‧‧旋轉軸
7‧‧‧氣體入口接口
9‧‧‧底側
10‧‧‧凹入部
11‧‧‧氣體出口接口
13‧‧‧箭頭
15‧‧‧幫浦
17、66‧‧‧表面
19‧‧‧凹槽
21‧‧‧底部凹入表面
25‧‧‧上邊緣部
27‧‧‧中間邊緣部
29‧‧‧下邊緣部
31‧‧‧上外直徑
33‧‧‧中間外直徑
35‧‧‧下外直徑
39‧‧‧邊緣環
41、69‧‧‧上表面
43‧‧‧水平表面
45‧‧‧垂直部
47‧‧‧厚度
48‧‧‧深度
49‧‧‧內直徑
51‧‧‧中空中心
53‧‧‧梯狀邊緣
57、71、87‧‧‧機器人葉片
59‧‧‧底座表面
65‧‧‧下部
67‧‧‧上部
75‧‧‧底材
77‧‧‧機械轉移機構
81‧‧‧起重機機構
83‧‧‧銷
第1圖係顯示在一基座內之一旋轉盤之一實施例之剖面示意圖;第2圖係顯示一基座之一表面之一實施例;第3圖係顯示根據本發明之一實施例之一旋轉盤及一邊緣環之剖面示意圖;第4圖係顯示一旋轉盤之側視圖以及旋轉盤與一邊緣環之對應展開俯視圖;第5圖係顯示根據本發明之一實施例之一機器人轉移葉片之平面示意圖,其中,機器人轉移葉片係與一旋轉盤及一邊緣環配合;第6圖係顯示根據本發明之另一實施例之一旋轉盤及一邊緣環剖面示意圖;第7圖係顯示一底材設置於一旋轉盤及一邊緣環之上;第8A圖及第8B圖係顯示一底材利用一機器人葉片從一旋轉盤被轉移之示意圖;第9圖係顯示在一起重機機構上之一底材與邊緣環一起被轉移之示意圖。
茲配合圖式說明本發明之較佳實施例。
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:上、下、 左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本發明。
第1圖係顯示在一基座內之一旋轉盤以及旋轉盤/基座配置是被包含以各種半導體製造器具,例如,MOCVD(金屬有機化學氣相沉積)或其他的CVD(化學氣相沉積)器具或被使用於半導體製造工業之其他的沉積器具。基座/旋轉盤配置代表了被發現在一半導體製造器具(例如,一MOCVD反應器)內之多個基座/旋轉盤配置之一種。當旋轉盤旋轉時,一晶圓(亦即,一底材)是被設置於旋轉盤之上,並且是受到處理。各種之底材尺寸是被使用於各種實施例之中。在一實施例之中,例如第1圖所示,處理氣體是被傳遞於旋轉盤之下以及透過一離去接口被排出。此種氣體傳遞配置伴隨著旋轉盤之旋轉本質係提供了優異的均勻度。旋轉盤是實心的,並且不包括有孔洞或其他的空隙延伸通過旋轉盤。
本發明提供了一系統與技術用於從旋轉盤之表面自動移除底材,而不會損傷到旋轉盤以及不使用依賴相鄰銷被容納於下面孔洞中之底材轉移機構。
雖然是以結合MOCVD(金屬有機化學氣相沉積)被敘述,但本發明之邊緣環及轉移技術可找到應用於所有的半導體與其他製造器具之中,這些製造器具乃是利用夾座、台或處理板容納底材。
第1圖係顯示一基座1,其係容納一或多個旋轉盤。旋轉盤3是被容納於基座1中之一凹入部10之內。每一個基座1可以包括有複數個凹入部10以及關連之旋轉盤3於各種製 造器具之一或多個處理室之中。一電漿產生系統係產生電漿於處理室之中。在各種實施例之中,旋轉盤3係繞者一旋轉軸5旋轉並且係以各種速度旋轉。旋轉盤3是以各種適當之堅固耐久材料所製成,例如,金屬、複合石墨及碳化矽。在一實施例之中,旋轉盤3是由具有一碳化矽塗層之一石墨底座所製成。各種之機械方式是被使用去造成旋轉盤3旋轉。箭頭13係表示一旋轉方向,順時針。但在其他實施例之中,旋轉盤3是以一逆時針方向旋轉。處理氣體是從氣體源於一氣體入口接口7被傳遞,並且是被一氣體出口接口11排出,在處理之前、之中及之後。氣體入口接口7係導引氣體至旋轉盤3之底側9,以及氣體出口接口11結合一幫浦15係從底側9排出氣體。氣體是被使用去沉積薄膜於底材之上。旋轉盤3包括有用於容納一底材之一表面17。表面17是實心的,而不具有孔洞。旋轉盤3具有各種尺寸,並且可以按尺寸被製造去容納具有直徑約200mm、300mm、400mm或其他尺寸之底材。基座1包括有凹入部10,其具有一底部凹入表面21用於容納旋轉盤3。
第2圖係顯示一基座之一實施例之俯視平面圖。基座1及底部凹入表面21是用來容納一旋轉盤(例如,顯示於第1圖中之旋轉盤3)。第2圖係顯示了氣體入口接口7及氣體出口接口11。複數個凹槽19係提供有複數個導管,其中,被傳遞之入口氣體能夠流動於導管之內。同時,複數個凹槽19所提供之複數個導管可讓氣體於氣體出口接口11被移除。凹槽19之結構在各種其他實施例之中是不同的,以及第2圖之半環形定位僅是用來示範說明的,而非限制凹槽定位之型式。
第3圖係顯示旋轉盤3之一實施例之剖面示意圖。在第3圖之實施例之中,旋轉盤3之邊緣是梯狀的,並且旋轉盤3之邊緣包括有一上邊緣部25、一中間邊緣部27及一下邊緣部29。下邊緣部29之外直徑是大於中間邊緣部27之外直徑,以及中間邊緣部27之外直徑是大於上邊緣部25之外直徑。上邊緣部25包括有一上外直徑31、中間邊緣部27包括有一中間外直徑33以及下邊緣部29包括有一下外直徑35。旋轉盤3之相對邊緣因此是梯狀的邊緣以及在本質上是階梯狀的。一邊緣環39是輕微地被定位於旋轉盤3之上,並且邊緣環39是不與第3圖中之旋轉盤3接觸。然而,當在使用中時,邊緣環39最好是位於中間邊緣部27之一上表面41之上,根據第3圖之實施例。
邊緣環39具有一大致上L形之形狀,並且邊緣環39具有水平部。此水平部具有一水平表面43及一垂直部45。邊緣環39是周向圍繞著旋轉盤3之周緣。邊緣環39是由碳化矽、石墨、以碳化矽塗佈之石墨以及其他適當之材料所製成。根據一實施例,當邊緣環39位於中間邊緣部27之上表面41之上時,水平表面43是實質上與旋轉盤3之表面17共平面,並且水平表面43是容納一底材。在其他實施例之中,邊緣環39之水平部具有其他之尺寸。換言之,底材具有一直徑,其乃是大於上邊緣部25之上外直徑31。邊緣環39之垂直部45之內直徑49是實質上與被容納於旋轉盤3上之底材之直徑相同,以使得底材位於水平表面43之上。
旋轉盤3之尺寸係根據被處理之底材而變化。在一實施例之中,旋轉盤3之厚度可以變化於大約0.7cm至1.5cm之 間。在各種實施例之中,上邊緣部25、中間邊緣部27及下邊緣部29之相對高度亦可以變化。在各種實施例之中,邊緣環39之垂直部45是介於大約0.1cm至1.0cm之間。然而,在其他實施例之中,其他的尺寸亦可以被使用。
第4圖係顯示具有上表面17之旋轉盤3以及邊緣環39。第4圖亦顯示了上邊緣部25之深度48是實質上等於邊緣環39之水平部之厚度47。邊緣環39包括有一中空中心51。當邊緣環39是被定位於旋轉盤3之上時,邊緣環39是繞著旋轉盤3周向延伸。旋轉盤3具有上表面17及梯狀邊緣53,如第3圖及第5圖所示。
第5圖係顯示第3圖具有旋轉盤3以及邊緣環39之配置。邊緣環39包括有垂直部45及水平表面43。在底材運送及處理過程之中,邊緣環39是位於中間邊緣部27之上表面41之上。一組機器人葉片57是沿著旋轉盤3之中間邊緣部27之外邊緣被設置,並且機器人葉片57是與旋轉盤3之中間邊緣部27之外邊緣接觸。換言之,機器人葉片57是以實質上相同於中間外直徑33(參見第3圖)之一距離被間隔開。機器人葉片57能夠是被容納於下邊緣部29之一底座表面59之上。機器人葉片57亦能夠被是被設置於邊緣環39之下,並且機器人葉片57因此能夠升起邊緣環39及設置於表面17上之任何底材,特別是具有一直徑大於上邊緣部25之上外直徑31之任何底材。
第6圖係顯示另一實施例,其中,旋轉盤63具有相對之梯狀邊緣,此相對之梯狀邊緣只具有兩個可區別之部分-下部65及上部67。上部67具有層部。層部具有一較大之外直 徑。旋轉盤63亦是套設於位於基座1中之凹入部10之中,例如第1圖所示。旋轉盤63包括有一上表面69。在一實施例之中,上表面69是實心的。旋轉盤63是與下部65結合,如此一來,邊緣環39能夠是位於下部65之表面66之上以及被設置於旋轉盤63上之一底材包括有一直徑實質上等於邊緣環39之垂直部45之內直徑,當邊緣環39是位於上表面69以及實質上是與水平表面43共平面時。根據此實施例,旋轉盤63可以被套設於一基座中之一開口之內,如此一來,機器人葉片71能夠延伸於邊緣環39之下,並且能夠升起及運送邊緣環39與由邊緣環39所固持之一底材。機器人葉片實質上是藉由下部65之外直徑所間隔開。
第3圖、第5圖及第6圖之兩個圖解係顯示本發明之實施例,但並不限於此。各種其他的配置,其中,旋轉盤具有一上部、上部具有一減小之外直徑、上部繞著盤之周圍容納一邊緣環、容納機器人手臂之一下方部以及機器人手臂能夠升起邊緣環,是被使用於其他的實施例之中。
第7圖係顯示一實施例,其中,旋轉盤3及邊緣環39包括有一底材75。可以清楚地看到,底材75包括有一直徑大於旋轉盤3之表面17之直徑,其是均等於旋轉盤3之上邊緣部25之上外直徑,此可以更清楚地由第3圖所示。
第8A圖及第8B圖係顯示一底材被運送。在第8A圖之中,底材75是被邊緣環39所固持,並且底材75是被相對之機器人葉片57升起以及是被固持於旋轉盤3之上。底材75之周緣是被保持於邊緣環39之水平部之上。第8B圖係顯示第8A圖之圖式之一不同的旋轉角度,並且係顯示了旋轉盤3、底材75以 及連接於機械轉移機構77之相對之機器人葉片57。機械轉移機構77可以升起邊緣環39及底材75。機械轉移機構77是各種機器人裝置之部分,其是被自動或人工控制。
第9圖係顯示在起重機機構81上之底材75。起重機機構81具有銷83。機器人葉片87能夠升起一組件,此組件包括設置於起重機機構81上之底材75以及運送底材75至處理室。機器人葉片87能夠放置包括設置於起重機機構81上之底材75之組件於邊緣環39之上,例如可以被運送及被使用於基座1之凹入部10之中,如被顯示於先前之圖式之中。機器人葉片87能夠運送包括設置於起重機機構81上之底材75之一組件至一處理室,並且機器人葉片87能夠與一機器人/轉移系統運作。此機器人/轉移系統亦包括有機械轉移機構77,其具有機器人葉片57及其他的轉移手臂與葉片。
雖然本發明已以較佳實施例揭露於上,然其並非用以限定本發明,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
3‧‧‧旋轉盤
17‧‧‧表面
25‧‧‧上邊緣部
27‧‧‧中間邊緣部
29‧‧‧下邊緣部
31‧‧‧上外直徑
33‧‧‧中間外直徑
35‧‧‧下外直徑
39‧‧‧邊緣環
41‧‧‧上表面
43‧‧‧水平表面
45‧‧‧垂直部
49‧‧‧內直徑

Claims (10)

  1. 一種用於處理半導體底材之裝置,包括:一旋轉盤,係容納一半導體底材,並且具有一梯狀外邊緣,其中,該梯狀外邊緣具有一上邊緣部及一下邊緣部,該上邊緣部之一上外直徑係小於該下邊緣部之一下外直徑;一基座,係容納該旋轉盤;以及一邊緣環,係繞著該旋轉盤之一圓周周向延伸,並且係位於該下邊緣部之一上表面之上,其中,該邊緣環具有一水平表面及一垂直部,該水平表面係接收該半導體底材之一周緣,以及該垂直部係設置於該水平表面之外。
  2. 如申請專利範圍第1項所述之用於處理半導體底材之裝置,其中,該旋轉盤之該梯狀外邊緣更具有一底部邊緣部,以及該底部邊緣部之一底部外直徑係大於該下外直徑。
  3. 如申請專利範圍第2項所述之用於處理半導體底材之裝置,更包括一底材升起機器人葉片,其中,該底材升起機器人葉片具有一對起重手臂,以及該對起重手臂係藉由該下外直徑間隔開,並且係升起含有該半導體底材之該邊緣環。
  4. 如申請專利範圍第1項所述之用於處理半導體底材之裝置,其中,該邊緣環之該垂直部之一內直徑係實質上等於該半導體底材之一直徑。
  5. 如申請專利範圍第1項所述之用於處理半導體底材之裝置,其中,該半導體底材之一直徑係大於該旋轉盤之一上表面之一直徑。
  6. 如申請專利範圍第1項所述之用於處理半導體底材之裝置, 其中,當該邊緣環係設置於該梯狀外邊緣之一周緣之上時,該邊緣環之該水平表面係實質上與該旋轉盤之一上表面共平面。
  7. 如申請專利範圍第1項所述之用於處理半導體底材之裝置,其中,該邊緣環之該垂直部係延伸於該旋轉盤之一上表面之上。
  8. 如申請專利範圍第1項所述之用於處理半導體底材之裝置,其中,該旋轉盤係位於一腔室之中,以及該腔室更包括:一氣體入口接口,係位於該基座之中,並且係傳遞一入口氣體至該旋轉盤之一底側;一氣體出口接口,係設置於該旋轉盤及一真空系統之下,其中,該真空系統係從該基座排出氣體;以及一電漿產生系統,係提供提供一電漿至該腔室。
  9. 一種用於處理半導體底材之裝置,包括:一旋轉盤,係容納一半導體底材,並且具有一梯狀外邊緣,其中,該梯狀外邊緣具有一上邊緣部、一中間邊緣部及一下邊緣部,該中間邊緣部之一中間外直徑係大於該上邊緣部之一上外直徑以及小於該下邊緣部之一下外直徑;一邊緣環,係設置於該中間邊緣部之一上表面之上,其中,該邊緣環具有實質上與該旋轉盤之一上表面共平面之一水平表面以及位於該水平表面外之一垂直部;一底材,設置於該邊緣環之該上表面及該水平表面之上,並且具有大於該上表面之一外直徑之一直徑;以及一晶圓葉片組件,具有至少兩底材升起葉片,其中,該等底 材升起葉片係藉由實質上等於該中間外直徑之一距離間隔開。
  10. 如申請專利範圍第9項所述之用於處理半導體底材之裝置,更包括:一處理室,具有一基座,其中,該基座係容納該旋轉盤及該邊緣環;一氣體入口接口,係位於該基座之中,並且係傳遞一入口氣體至該旋轉盤之一底側;以及一氣體出口接口,係設置於該旋轉盤及一真空系統之下,其中,該真空系統係從該基座經由該氣體出口接口排出氣體。
TW102149204A 2013-03-15 2013-12-31 用於處理半導體底材之裝置 TWI532119B (zh)

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