WO2022208901A1 - Dispositif de traitement pour gaz d'échappement de fabrication de semi-conducteur - Google Patents

Dispositif de traitement pour gaz d'échappement de fabrication de semi-conducteur Download PDF

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Publication number
WO2022208901A1
WO2022208901A1 PCT/JP2021/016592 JP2021016592W WO2022208901A1 WO 2022208901 A1 WO2022208901 A1 WO 2022208901A1 JP 2021016592 W JP2021016592 W JP 2021016592W WO 2022208901 A1 WO2022208901 A1 WO 2022208901A1
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WO
WIPO (PCT)
Prior art keywords
gas
exhaust gas
semiconductor manufacturing
scrubber
reducing
Prior art date
Application number
PCT/JP2021/016592
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English (en)
Japanese (ja)
Inventor
啓志 今村
Original Assignee
カンケンテクノ株式会社
北京康肯▲環▼保▲設▼▲備▼有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カンケンテクノ株式会社, 北京康肯▲環▼保▲設▼▲備▼有限公司 filed Critical カンケンテクノ株式会社
Priority to KR1020237022650A priority Critical patent/KR20230116036A/ko
Priority to JP2021540441A priority patent/JP7021730B1/ja
Priority to US18/274,277 priority patent/US20240082782A1/en
Priority to CN202180003384.0A priority patent/CN115461131B/zh
Priority to TW110133589A priority patent/TWI821745B/zh
Publication of WO2022208901A1 publication Critical patent/WO2022208901A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/54—Nitrogen compounds
    • B01D53/56—Nitrogen oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/68—Halogens or halogen compounds
    • B01D53/70—Organic halogen compounds

Definitions

  • the present invention relates to a treatment apparatus suitable for abatement treatment of persistent semiconductor manufacturing exhaust gases containing PFCs (perfluoro compounds), N 2 O, and the like.
  • fluorine compound gases are used as cleaning gases, etching gases, and the like in the manufacturing processes of semiconductor devices and liquid crystal displays.
  • fluorine compounds are called " PFCs ", and typical ones are perfluorocarbons such as CF4 , C2F6 , C3F8 , C4F8 , C5F8 , CHF3 and inorganic fluorine - containing compounds such as SF6 and NF3.
  • N 2 O (nitrous oxide) or the like is used as a material gas for manufacturing a nitride film.
  • the ratio of PFCs and N 2 O in the whole exhaust gas is small compared to other gases such as N 2 and Ar, but these PFCs and N 2 O have a global warming potential (GWP) is thousands to tens of thousands of times greater than that of CO 2 , and its lifetime in the atmosphere is several thousand to tens of thousands of years longer than that of CO 2 . becomes enormous.
  • GWP global warming potential
  • perfluorocarbons represented by CF 4 and C 2 F 6 are not easily decomposed because the CF bond is stable (the bond energy is as large as 130 kcal/mol). For this reason, various techniques have been developed for removing PFCs, N 2 O, etc., which have become used, from the exhaust gas.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2002-188810 describes harmful exhaust gas with an inlet scrubber. After removing the dust contained in the exhaust gas, the exhaust gas is thermally decomposed in an exhaust gas processing tower equipped with an electric heater, and the decomposed gas is detoxified by gas-liquid contact with a wet outlet scrubber. .
  • the above prior art has the following problems.
  • the electric heater when the PFCs in the exhaust gas are mainly composed of persistent CF 4 , the electric heater must be used at a very high temperature of 1500 ° C or higher.
  • the physical properties of the heating element material are also close to the limit, and there is a problem that continuous operation over a long period of time is difficult.
  • the “2030 Agenda for Sustainable Development” was adopted at the United Nations Summit in September 2015, and since then various discussions and studies have been conducted regarding the efficient use of energy in the future. Under these circumstances, there is an increasing need for higher efficiency and energy saving associated with the exhaust gas treatment apparatus equipped with the above-mentioned conventional electric heater, which consumes a relatively large amount of electric power for heating. It can easily be expected to come.
  • the main object of the present invention is to have the advantages of the conventional exhaust gas treatment apparatus using an electric heater as they are, and to achieve more efficient use of electric energy, which is the most efficient PFCs.
  • An object of the present invention is to provide a semiconductor manufacturing exhaust gas treatment apparatus capable of remarkably improving the detoxification efficiency of semiconductor manufacturing exhaust gas mainly composed of CF 4 which is difficult to decompose.
  • the present invention for example, as shown in FIG. That is, an inlet scrubber 12 for liquid washing the exhaust gas E discharged from the semiconductor manufacturing process, a gas processing furnace 14 for thermally decomposing the exhaust gas E that has passed through the inlet scrubber 12, and the gas processing furnace 14 for thermal decomposition. and an outlet scrubber 16 for washing the exhaust gas E described above.
  • the gas processing furnace 14 includes an outer cylinder 18 having a closed cylindrical main body 18a with a gas processing space 18b formed therein and a gas introduction port 18c formed in the bottom surface of the main body 18a.
  • the inner cylinder 20 is attached to the inner bottom surface of the main body 18a so as to surround the gas processing space 18b, the other end is open, and the inner cylinder 20 extends to a position close to the ceiling surface of the main body 18a so as to cross the gas processing space 18b. and an electric heater 22 vertically installed from the ceiling portion 18d of the main body 18a and having a long rod-shaped heating element 22a arranged in the inner space of the inner cylinder 20.
  • a narrowing portion 24 is provided for rapidly narrowing the inner diameter of the flow path of the exhaust gas E after passing through the inlet scrubber 12 to the diameter of the gas introduction port 18c or less.
  • a reducing gas for supplying a predetermined amount of reducing gas G toward the exhaust gas E in the vicinity of the upstream end portion in the exhaust gas flow direction of the throttle portion 24.
  • Supply means 26 are provided before the gas introduction port 18c.
  • the present invention has, for example, the following effects.
  • the reducing gas G supplied from the reducing gas supply means 26 to the washed exhaust gas E after passing through the inlet scrubber 12 increases in flow velocity when passing through the throttle section 24, and simultaneously removes the exhaust gas E.
  • the chances of coming into contact with PFCs, N 2 O, etc., which are harmful (thermally decomposed) components, will increase.
  • the exhaust gas E and the reducing gas G supplied into the gas treatment furnace 14 through the gas introduction port 18c in a state where the flow velocity is increased are heated by the heating element of the electric heater 22 arranged in the inner cylinder 20.
  • CF4 which is the most difficult to decompose among PFCs, can be decomposed by 99.9% or more at a lower heating temperature than before, such as 1250 ° C to 1350 ° C. Become.
  • the flow rate of the reducing gas G supplied from the reducing gas supply means 26 is the same as that of the exhaust gas E supplied to the gas treatment furnace 14.
  • a ratio of 0.1 to 5 parts by volume per 100 parts by volume of the flow rate is preferable.
  • the reducing gas G is preferably hydrogen or ammonia.
  • the reducing gas G is preferably hydrogen or ammonia.
  • the amount of NOx (nitrogen oxides) discharged after the N 2 O is thermally decomposed can be significantly reduced.
  • an exhaust gas treatment apparatus that employs a conventional electric heater as it is, and it is possible to use electric energy more efficiently, and it is the most difficult PFCs to decompose. It is possible to provide a semiconductor manufacturing exhaust gas treatment apparatus capable of remarkably improving the removal efficiency of semiconductor manufacturing exhaust gas mainly composed of CF 4 .
  • FIG. 1 is a schematic cross-sectional view showing an example of an apparatus for treating semiconductor manufacturing exhaust gas according to an embodiment of the present invention
  • FIG. 1 is a schematic cross-sectional view showing an example of an apparatus 10 for treating semiconductor manufacturing exhaust gas according to an embodiment of the present invention.
  • This semiconductor manufacturing exhaust gas treatment apparatus 10 is an apparatus for thermally decomposing and detoxifying an exhaust gas E containing PFCs, N 2 O, and the like discharged from an emission source (semiconductor manufacturing process) (not shown). It consists of a scrubber 12 , a gas treatment furnace 14 and an outlet scrubber 16 .
  • the inlet scrubber 12 is a wet scrubber that removes dust and water-soluble components contained in the exhaust gas E introduced into the gas treatment furnace 14.
  • a spray nozzle 12b is installed near the top of the inside and sprays a chemical solution such as water in the form of a spray.
  • the inlet scrubber 12 communicates with an exhaust gas generating source (not shown) such as a semiconductor manufacturing apparatus through an exhaust gas duct 28 .
  • the inlet scrubber 12 is erected on the chemical liquid tank 30 (see FIG. 1) or (not shown) is arranged separately from the chemical liquid tank 30 and both are connected by a pipe so that the waste liquid can be discharged. It is designed to be fed into the chemical liquid tank 30 .
  • a circulating pump 32 is installed between the spray nozzle 12b and the chemical tank 30 to lift the chemical liquid stored in the chemical tank 30 to the spray nozzle 12b.
  • the waste liquid from the inlet scrubber 12 not only the waste liquid from the inlet scrubber 12 but also the flue gas E after liquid washing is sent to the chemical liquid tank 30.
  • the space between the surfaces (upper space) is used as an exhaust gas passage.
  • reference numeral 30a in FIG. 1 denotes a “partition wall” that prevents the flue gas E that has been liquid-washed in the inlet scrubber 12 from flowing into the outlet scrubber 16 without passing through the gas treatment furnace 14 .
  • the gas treatment furnace 14 is a device that heats and decomposes PFCs, N 2 O, etc. in the exhaust gas E using an electric heater 22, and is roughly composed of an outer cylinder 18, an inner cylinder 20, and an electric heater 22. .
  • the outer cylinder 18 has a sealed cylindrical main body 18a with at least its inner surface made of a refractory material such as castable and having a gas processing space 18b formed therein. As shown in FIG. 1, the main body 18a is erected so that the flat portion (of the main body 18a) faces upside down when used, and a gas introduction port 18c is formed in the bottom surface. An insertion port 18e for inserting the electric heater 22 is formed in the ceiling portion 18d of the main body 18a at a position facing the gas introduction port 18c.
  • the outer cylinder 18 is formed in a closed cylindrical shape, but the shape of the outer cylinder 18 may be any shape as long as it is cylindrical with both ends closed. It may be in the shape of a square tube or the like.
  • a gas introduction port 18c is formed in the center of the bottom surface of the main body 18a, and a gas processing space 18b inside the main body 18a is provided at a position close to the gas introduction port 18c on the bottom surface of the main body 18a.
  • a gas discharge port 18f is provided for discharging the exhaust gas E that has been thermally decomposed.
  • the inner cylinder 20 is a cylindrical member that is made of a refractory material such as castable, or a metal material such as Hastelloy (registered trademark of Haynes) or stainless steel, and has open (opened) longitudinal end faces.
  • One longitudinal end of the inner cylinder 20 is attached to the inner bottom surface of the main body 18a of the outer cylinder 18 so as to surround the gas introduction port 18c.
  • the inner cylinder 20 extends across the gas processing space 18b of the outer cylinder 18, and the other end in the longitudinal direction is arranged at a position close to the ceiling surface of the main body 18a of the outer cylinder 18.
  • the present embodiment shows the case where the inner cylinder 20 is formed in a cylindrical shape, the shape of the inner cylinder 20 may be any shape as long as it is cylindrical with both ends opened. etc.
  • the electric heater 22 serves as a heat source for heating the gas processing space 18b in the gas processing furnace 14, and has a long rod-shaped heating element 22a.
  • the heating element 22a has corrosion resistance to HF (hydrogen fluoride) produced by thermal decomposition of PFCs in the exhaust gas E to be treated, and is capable of generating heat at a high temperature.
  • HF hydrogen fluoride
  • ceramics such as silicon carbide (SiC), molybdenum disilicide (MoSi 2 ) and lanthanum chromite (LaCrO 3 ), ceramics such as alumina, or metals such as Hastelloy (Haynes registered trademark).
  • the electric heater 22 is detachably attached by inserting the heating element 22a into the inner space of the main body 18a through an insertion opening 18e provided at a predetermined position in the ceiling portion 18d of the outer cylinder 4. For this reason, the electric heater 22 is vertically installed from the ceiling portion 18d of the main body 18a of the outer cylinder 18, and a long rod-shaped heating element 22a is arranged in the inner space of the inner cylinder 20. As shown in FIG.
  • the gas processing furnace 14 configured as described above is equipped with temperature measuring means such as a thermocouple for detecting the temperature of the gas processing space 18b, and the temperature data (temperatur signal) is given to control means comprising a CPU [Central Processing Unit], a memory, an input device, a display device, etc., via a signal line.
  • control means comprising a CPU [Central Processing Unit], a memory, an input device, a display device, etc., via a signal line.
  • a power supply unit (not shown) is also connected to the control means.
  • the gas processing furnace 14 configured as described above is disposed on the chemical liquid tank 30, and the upper end of the short pipe 24a having substantially the same inner diameter as the gas introduction port 18c is connected to the gas introduction port 18c.
  • the lower end of the short pipe 24a is connected so as to communicate with the flow area of the exhaust gas E after passing through the inlet scrubber 12 in the chemical solution tank 30 .
  • the short pipe 24a functions as a "throttle portion 24" that rapidly narrows the inner diameter of the flow path of the exhaust gas E after passing through the inlet scrubber 12 to the diameter of the gas introduction port 18c or less.
  • a A reducing gas supply means 26 for supplying a predetermined amount of reducing gas G toward the exhaust gas E to be fed is provided.
  • the leading end of the reducing gas supply means 26 communicates with the inner space of the chemical liquid tank 30 near the connection point of the short pipe 24a on the ceiling of the chemical liquid tank 30, and the base end is a tank or cylinder for storing the reducing gas G.
  • a reducing gas supply pipe 26a connected to the storage source 26c, and a flow rate adjusting means 26b provided on the reducing gas supply pipe 26a for adjusting the amount of the reducing gas G supplied into the chemical liquid tank 30, etc. consists of
  • Examples of the reducing gas G supplied by the reducing gas supply means 26 include hydrogen, carbon monoxide, ammonia, and hydrocarbons. , it is possible to reduce the amount of carbon dioxide when exhaust gas E is discharged into the atmosphere after thermal decomposition treatment. In addition, when N 2 O is included in the target components for abatement in the exhaust gas E, the amount of NOx emitted after the N 2 O is thermally decomposed is reduced by supplying hydrogen or ammonia in an amount approximately equal to the N 2 O. The amount can also be significantly reduced. On the other hand, if a hydrocarbon such as CH 4 (methane) is used as the reducing gas G, the initial cost and running cost of the entire PFCs-containing exhaust gas treatment apparatus 10 can be kept low.
  • a hydrocarbon such as CH 4 (methane)
  • the flow rate of the reducing gas G supplied from the reducing gas supply means 26 is, for example, when the exhaust gas E contains PFCs, the flow rate of the exhaust gas E supplied to the gas treatment furnace 14 is 200 liters/ 0.2 to 10 liters per minute, that is, the ratio of the flow rate of the reducing gas G to 100 volume parts of the exhaust gas E supplied to the gas treatment furnace 14 is 0.1 to 5 volume parts. and more preferably in the range of 0.5 to 2.5 parts by volume.
  • ammonia is used as the reducing gas G
  • urea or urea water may be used as its supply source.
  • the outlet scrubber 16 is a wet scrubber that cools the exhaust gas E after thermal decomposition that has passed through the gas treatment furnace 14 and finally removes dust, water-soluble components, etc. generated by the thermal decomposition from the exhaust gas E.
  • a straight pipe type scrubber main body 16a communicating with a gas outlet 18f provided on the bottom surface of the main body 18a of the gas processing furnace 14 via a discharge pipe 34,
  • a plurality of perforated plates 16b (four stages in this embodiment) are installed at intervals, and the uppermost perforated plate 16b is attached directly above the perforated plate 16b. It is composed of a downward spray nozzle 16c for spraying a chemical solution.
  • the outlet scrubber 16 is erected on the chemical liquid tank 30 so that waste water is sent into the chemical liquid tank 30 .
  • outlet scrubber 16 of this embodiment unlike the inlet scrubber 12 described above, a new chemical such as fresh water is supplied to the spray nozzle 16c (see FIG. 1).
  • the discharge side of 42 may be connected for communication so that the chemical liquid stored in the chemical liquid tank 30 is lifted up to the spray nozzle 16c.
  • An exhaust fan 36 for discharging the treated exhaust gas E into the atmosphere is connected to the outlet of the outlet scrubber 16 .
  • the operation switch (not shown) of the treatment apparatus 10 is turned on. Then, the gas processing furnace 14 and the electric heater 22 are operated, and heating of the gas processing space 18b in the gas processing furnace 14 is started.
  • the exhaust fan 36 operates, and the processing apparatus 10 Introduction of exhaust gas E to is started. Then, the exhaust gas E passes through the inlet scrubber 12, the gas treatment furnace 14 and the outlet scrubber 16 in this order, and the components to be removed (that is, PFCs, N 2 O, etc.) in the exhaust gas E are removed. Further, the amount of electric power supplied to the electric heater 22 of the gas processing furnace 14 is controlled by a control means (not shown) so that the temperature in the gas processing space 18b is maintained at a predetermined temperature.
  • the reducing gas G supplied from the reducing gas supply means 26 to the washed exhaust gas E after passing through the inlet scrubber 12 passes through the throttle section 24.
  • the flow velocity increases and at the same time, the chances of contact with PFCs, N 2 O, etc., which are the target components for detoxification (thermal decomposition) in the exhaust gas E increase.
  • the exhaust gas E and the reducing gas G supplied into the gas treatment furnace 14 through the gas introduction port 18c in a state where the flow velocity is increased are heated by the heating element of the electric heater 22 arranged in the inner cylinder 20.
  • CF 4 which is the most difficult to decompose among PFCs, can be decomposed by 99.9% or more at a heating temperature of 1250° C. to 1350° C., which is lower than the conventional one.
  • the short pipe 24a connects the gas introduction port 18c provided in the outer cylinder 18 of the gas processing furnace 14 and the upper space of the chemical solution tank 30 through which the exhaust gas E washed by the inlet scrubber 12 flows.
  • the gas introduction port 18c of the outer cylinder 18 and the upper space of the chemical liquid tank 30 may be directly connected without using such a short pipe 24a.
  • the front edge of the gas introduction port 18 c of the outer cylinder 18 in the direction of gas flow itself functions as the throttle portion 24 .
  • 10 semiconductor manufacturing exhaust gas treatment device
  • 12 inlet scrubber
  • 14 gas treatment furnace
  • 16 outlet scrubber
  • 18 outer cylinder
  • 18a main body
  • 18b gas treatment space
  • 18c gas inlet
  • 18d ceiling part
  • 20 inner cylinder
  • 22 electric heater
  • 22a heating element
  • 24 restrictor
  • 26 reducing gas supply means
  • E exhaust gas
  • G reducing gas.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Treating Waste Gases (AREA)

Abstract

Le dispositif de traitement pour gaz d'échappement de fabrication de semi-conducteur selon la présente invention est pourvu d'un épurateur d'entrée (12), d'un four de traitement de gaz (14) et d'un épurateur de sortie (16). Le four de traitement de gaz (14) comprend : un cylindre externe (18) ayant un corps (18a), un espace de traitement de gaz (18b) formé à l'intérieur du corps (18a), et un orifice d'alimentation en gaz (18c) percé dans une surface inférieure du corps (18a) ; un cylindre interne (20) ayant une extrémité fixée à une surface inférieure interne du corps (18a) de façon à entourer l'orifice d'alimentation en gaz (18c), et une autre extrémité qui est ouverte, le cylindre interne (20) s'étendant à travers l'espace de traitement de gaz (18b) à une position proche d'une surface de plafond du corps (18a) ; et un dispositif de chauffage électrothermique (22) suspendu à partir d'une partie de plafond (18d) du corps (18a) et ayant un corps de chauffage (22a) ayant une forme de tige allongée placée dans un espace interne du cylindre interne (20). Avant l'orifice d'alimentation en gaz (18c) est prévu une partie étroite (24) où le diamètre interne du chemin d'écoulement de gaz d'échappement (E) après passage à travers l'épurateur d'entrée (12) est rétréci en une fois au diamètre de port de l'orifice d'alimentation en gaz (18c) ou moins, et un moyen d'alimentation en gaz réducteur (26) qui fournit une quantité prédéterminée de gaz réducteur (G) vers le gaz d'échappement (E) à proximité d'une partie d'extrémité de la partie étroite (24) sur le côté amont dans la direction d'écoulement de gaz d'échappement.
PCT/JP2021/016592 2021-04-01 2021-04-26 Dispositif de traitement pour gaz d'échappement de fabrication de semi-conducteur WO2022208901A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020237022650A KR20230116036A (ko) 2021-04-01 2021-04-26 반도체 제조 배기가스 처리 장치
JP2021540441A JP7021730B1 (ja) 2021-04-01 2021-04-26 半導体製造排ガスの処理装置
US18/274,277 US20240082782A1 (en) 2021-04-01 2021-04-26 Treatment device for semiconductor manufacturing exhaust gas
CN202180003384.0A CN115461131B (zh) 2021-04-01 2021-04-26 半导体制造废气的处理装置
TW110133589A TWI821745B (zh) 2021-04-01 2021-09-09 處理半導體製造之排氣的處理裝置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2021/014176 WO2022208848A1 (fr) 2021-04-01 2021-04-01 Dispositif de traitement de gaz d'échappement contenant des hydrocarbures perfluorés (pfc)
JPPCT/JP2021/014176 2021-04-01

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WO2022208901A1 true WO2022208901A1 (fr) 2022-10-06

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PCT/JP2021/014176 WO2022208848A1 (fr) 2021-04-01 2021-04-01 Dispositif de traitement de gaz d'échappement contenant des hydrocarbures perfluorés (pfc)
PCT/JP2021/016592 WO2022208901A1 (fr) 2021-04-01 2021-04-26 Dispositif de traitement pour gaz d'échappement de fabrication de semi-conducteur

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000024447A (ja) * 1998-07-09 2000-01-25 Sony Corp 排ガス処理装置
JP2004278879A (ja) * 2003-03-14 2004-10-07 Babcock Hitachi Kk 排ガス燃焼処理装置
JP2005218911A (ja) * 2004-02-03 2005-08-18 Applied Materials Inc 排ガス処理方法および排ガス処理装置
JP2006150281A (ja) * 2004-11-30 2006-06-15 Kanken Techno Co Ltd 半導体製造装置の排ガス除害装置
JP2007059061A (ja) * 2005-07-29 2007-03-08 Kanken Techno Co Ltd 電気ヒータおよび該ヒータを用いた半導体排ガス処理装置
JP2007054720A (ja) * 2005-08-23 2007-03-08 Kanken Techno Co Ltd パーフルオロカーボンガスの除害方法及び除害装置
JP2007061754A (ja) * 2005-08-31 2007-03-15 Kanken Techno Co Ltd 排ガス除害装置
JP2009082892A (ja) * 2007-10-03 2009-04-23 Kanken Techno Co Ltd 排ガス処理装置の温度制御方法及び該方法を用いた排ガス処理装置と排ガス処理システム

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000024447A (ja) * 1998-07-09 2000-01-25 Sony Corp 排ガス処理装置
JP2004278879A (ja) * 2003-03-14 2004-10-07 Babcock Hitachi Kk 排ガス燃焼処理装置
JP2005218911A (ja) * 2004-02-03 2005-08-18 Applied Materials Inc 排ガス処理方法および排ガス処理装置
JP2006150281A (ja) * 2004-11-30 2006-06-15 Kanken Techno Co Ltd 半導体製造装置の排ガス除害装置
JP2007059061A (ja) * 2005-07-29 2007-03-08 Kanken Techno Co Ltd 電気ヒータおよび該ヒータを用いた半導体排ガス処理装置
JP2007054720A (ja) * 2005-08-23 2007-03-08 Kanken Techno Co Ltd パーフルオロカーボンガスの除害方法及び除害装置
JP2007061754A (ja) * 2005-08-31 2007-03-15 Kanken Techno Co Ltd 排ガス除害装置
JP2009082892A (ja) * 2007-10-03 2009-04-23 Kanken Techno Co Ltd 排ガス処理装置の温度制御方法及び該方法を用いた排ガス処理装置と排ガス処理システム

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