WO2022201995A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2022201995A1
WO2022201995A1 PCT/JP2022/006329 JP2022006329W WO2022201995A1 WO 2022201995 A1 WO2022201995 A1 WO 2022201995A1 JP 2022006329 W JP2022006329 W JP 2022006329W WO 2022201995 A1 WO2022201995 A1 WO 2022201995A1
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WO
WIPO (PCT)
Prior art keywords
substrate
processing
dummy
unit
dummy substrate
Prior art date
Application number
PCT/JP2022/006329
Other languages
English (en)
Japanese (ja)
Inventor
裕司 平藤
Original Assignee
株式会社Screenホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Screenホールディングス filed Critical 株式会社Screenホールディングス
Priority to CN202280024044.0A priority Critical patent/CN117083703A/zh
Priority to KR1020237026670A priority patent/KR20230129035A/ko
Publication of WO2022201995A1 publication Critical patent/WO2022201995A1/fr

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

Un dispositif de traitement de substrat comprend : une section de maintien de support qui maintient un support ; un premier groupe d'unités de traitement ; un second groupe d'unités de traitement ; une première section de réception de substrat factice ; une seconde section de réception de substrat factice ; une section de placement de substrat ; une première unité de transport qui transporte un substrat entre une première unité de traitement et la section de placement de substrat et transporte un substrat factice entre la première unité de traitement et la première section de réception de substrat factice ; une deuxième unité de transport qui transporte un substrat entre une seconde unité de traitement et la section de placement de substrat et transporte un substrat factice entre la seconde unité de traitement et la seconde section de réception de substrat factice ; une troisième unité de transport qui transporte un substrat entre le support et la section de placement de substrat ; une section de stockage qui stocke des données comprenant un premier statut qui indique l'état du premier groupe d'unités de traitement et un second statut qui indique l'état du second groupe d'unités de traitement ; une section de préparation de programme qui prépare un programme de transport ; et une section de commande de transport qui commande, en fonction du programme de transport, le transport effectué par la première unité de transport, la deuxième unité de transport et la troisième unité de transport.
PCT/JP2022/006329 2021-03-23 2022-02-17 Dispositif de traitement de substrat et procédé de traitement de substrat WO2022201995A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202280024044.0A CN117083703A (zh) 2021-03-23 2022-02-17 基板处理装置以及基板处理方法
KR1020237026670A KR20230129035A (ko) 2021-03-23 2022-02-17 기판 처리 장치 및 기판 처리 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-049170 2021-03-23
JP2021049170A JP2022147779A (ja) 2021-03-23 2021-03-23 基板処理装置および基板処理方法

Publications (1)

Publication Number Publication Date
WO2022201995A1 true WO2022201995A1 (fr) 2022-09-29

Family

ID=83396883

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/006329 WO2022201995A1 (fr) 2021-03-23 2022-02-17 Dispositif de traitement de substrat et procédé de traitement de substrat

Country Status (5)

Country Link
JP (1) JP2022147779A (fr)
KR (1) KR20230129035A (fr)
CN (1) CN117083703A (fr)
TW (1) TWI802326B (fr)
WO (1) WO2022201995A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146450A (ja) * 2002-10-22 2004-05-20 Tokyo Electron Ltd 基板処理装置
JP2004304116A (ja) * 2003-04-01 2004-10-28 Hitachi Kokusai Electric Inc 基板処理装置
JP2010123733A (ja) * 2008-11-19 2010-06-03 Tokyo Electron Ltd 基板処理装置及びその処理方法、並びに記憶媒体
JP2017041506A (ja) * 2015-08-18 2017-02-23 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP2021044482A (ja) * 2019-09-13 2021-03-18 株式会社Screenホールディングス 基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7091222B2 (ja) * 2018-10-23 2022-06-27 株式会社Screenホールディングス 熱処理方法および熱処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146450A (ja) * 2002-10-22 2004-05-20 Tokyo Electron Ltd 基板処理装置
JP2004304116A (ja) * 2003-04-01 2004-10-28 Hitachi Kokusai Electric Inc 基板処理装置
JP2010123733A (ja) * 2008-11-19 2010-06-03 Tokyo Electron Ltd 基板処理装置及びその処理方法、並びに記憶媒体
JP2017041506A (ja) * 2015-08-18 2017-02-23 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP2021044482A (ja) * 2019-09-13 2021-03-18 株式会社Screenホールディングス 基板処理装置

Also Published As

Publication number Publication date
KR20230129035A (ko) 2023-09-05
CN117083703A (zh) 2023-11-17
JP2022147779A (ja) 2022-10-06
TWI802326B (zh) 2023-05-11
TW202245041A (zh) 2022-11-16

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