WO2022200819A8 - 駆動回路 - Google Patents

駆動回路 Download PDF

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Publication number
WO2022200819A8
WO2022200819A8 PCT/IB2021/000184 IB2021000184W WO2022200819A8 WO 2022200819 A8 WO2022200819 A8 WO 2022200819A8 IB 2021000184 W IB2021000184 W IB 2021000184W WO 2022200819 A8 WO2022200819 A8 WO 2022200819A8
Authority
WO
WIPO (PCT)
Prior art keywords
state
voltage
switching element
negative voltage
terminal
Prior art date
Application number
PCT/IB2021/000184
Other languages
English (en)
French (fr)
Other versions
WO2022200819A1 (ja
Inventor
卓 下村
啓一郎 沼倉
明範 大久保
Original Assignee
日産自動車株式会社
ルノー エス． ア． エス．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日産自動車株式会社, ルノー エス． ア． エス． filed Critical 日産自動車株式会社
Priority to JP2023508126A priority Critical patent/JPWO2022200819A1/ja
Priority to PCT/IB2021/000184 priority patent/WO2022200819A1/ja
Priority to CN202180095666.8A priority patent/CN117083803A/zh
Priority to EP21931956.3A priority patent/EP4318947A4/en
Priority to US18/283,417 priority patent/US20240178829A1/en
Publication of WO2022200819A1 publication Critical patent/WO2022200819A1/ja
Publication of WO2022200819A8 publication Critical patent/WO2022200819A8/ja

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/38—Means for preventing simultaneous conduction of switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

本発明は、スイッチング素子1に電圧を印加してオン状態とオフ状態を切り替える。スイッチング素子1は制御端子と高電位端子と低電位端子とを有し、低鼋位端子の電位を基準電位とした場合の制御端子の電圧に応じて、高電位端子と低電位端子の間に電流が流れるオン状態と電流が流れないオフ状態とが切り替わる。駆動回路は、負電圧用電源5と電圧変更部R2，R3，C1とを備える。負電圧用電源は、スイッチング素子がオン状態からオフ状態に切り替わる時に電圧として制御端子に負電圧を印加する。電圧変更部は、スイッチング素子がオン状態からオフ状態に切り替わった直後の時の負電圧用鼋源による負電圧よりも、スイッチング素子がオフ状態からオン状態に切り替わる直前の時の電圧を高く変更する。
PCT/IB2021/000184 2021-03-22 2021-03-22 駆動回路 WO2022200819A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2023508126A JPWO2022200819A1 (ja) 2021-03-22 2021-03-22
PCT/IB2021/000184 WO2022200819A1 (ja) 2021-03-22 2021-03-22 駆動回路
CN202180095666.8A CN117083803A (zh) 2021-03-22 2021-03-22 驱动电路
EP21931956.3A EP4318947A4 (en) 2021-03-22 2021-03-22 DRIVING CIRCUIT
US18/283,417 US20240178829A1 (en) 2021-03-22 2021-03-22 Driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2021/000184 WO2022200819A1 (ja) 2021-03-22 2021-03-22 駆動回路

Publications (2)

Publication Number Publication Date
WO2022200819A1 WO2022200819A1 (ja) 2022-09-29
WO2022200819A8 true WO2022200819A8 (ja) 2023-09-07

Family

ID=83395229

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2021/000184 WO2022200819A1 (ja) 2021-03-22 2021-03-22 駆動回路

Country Status (5)

Country Link
US (1) US20240178829A1 (ja)
EP (1) EP4318947A4 (ja)
JP (1) JPWO2022200819A1 (ja)
CN (1) CN117083803A (ja)
WO (1) WO2022200819A1 (ja)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4949213A (en) * 1988-11-16 1990-08-14 Fuji Electric Co., Ltd. Drive circuit for use with voltage-drive semiconductor device
JP3769932B2 (ja) * 1998-04-20 2006-04-26 株式会社明電舎 スイッチング素子のゲート駆動回路
JP3770008B2 (ja) * 1999-11-05 2006-04-26 株式会社日立製作所 半導体電力変換装置
US6201714B1 (en) * 1999-11-09 2001-03-13 Skynet Electronics Co., Ltd. Exchanging converter having a zero-voltage switching control circuit for driving an output voltage filter capacitor to partially feed back storage energy to an input side of the transformer or storage inductor
JP4768476B2 (ja) * 2006-03-03 2011-09-07 川崎重工業株式会社 自己消弧型半導体素子の駆動装置
JPWO2008155917A1 (ja) * 2007-06-19 2010-08-26 パナソニック株式会社 スイッチング素子駆動回路
US20100109750A1 (en) * 2008-10-30 2010-05-06 Jens Barrenscheen Boost Mechanism Using Driver Current Adjustment for Switching Phase Improvement
JP5130310B2 (ja) * 2010-03-17 2013-01-30 日立アプライアンス株式会社 電圧駆動型半導体素子のゲート駆動回路及び電力変換装置
JP5827609B2 (ja) * 2012-09-27 2015-12-02 株式会社豊田中央研究所 駆動回路
CN106104993B (zh) * 2014-05-30 2019-05-10 三菱电机株式会社 电力用半导体元件的驱动电路
CN109314509B (zh) * 2016-06-17 2020-03-10 日产自动车株式会社 驱动装置
JP6904091B2 (ja) 2017-06-21 2021-07-14 富士電機株式会社 ゲート駆動回路およびインバータ装置
JP6992498B2 (ja) * 2017-12-26 2022-01-13 株式会社デンソー 駆動対象スイッチの駆動回路

Also Published As

Publication number Publication date
JPWO2022200819A1 (ja) 2022-09-29
US20240178829A1 (en) 2024-05-30
WO2022200819A1 (ja) 2022-09-29
EP4318947A4 (en) 2024-05-22
CN117083803A (zh) 2023-11-17
EP4318947A1 (en) 2024-02-07

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