MX367703B - Dispositivo de accionamiento. - Google Patents

Dispositivo de accionamiento.

Info

Publication number
MX367703B
MX367703B MX2018015651A MX2018015651A MX367703B MX 367703 B MX367703 B MX 367703B MX 2018015651 A MX2018015651 A MX 2018015651A MX 2018015651 A MX2018015651 A MX 2018015651A MX 367703 B MX367703 B MX 367703B
Authority
MX
Mexico
Prior art keywords
switching element
terminal
main switching
resistor
main
Prior art date
Application number
MX2018015651A
Other languages
English (en)
Other versions
MX2018015651A (es
Inventor
Hayashi Tetsuya
Shimomura Taku
Okubo Akinori
Iwasaki Yuichi
Original Assignee
Nissan Motor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor filed Critical Nissan Motor
Publication of MX2018015651A publication Critical patent/MX2018015651A/es
Publication of MX367703B publication Critical patent/MX367703B/es

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

Un dispositivo de accionamiento en donde un elemento de conmutación principal se conecta a una trayectoria de corriente principal, una terminal de entrada del elemento de conmutación en el lado de potencial más alto y una terminal de salida del elemento de conmutación en el lado de potencial más bajo se conectan eléctricamente a una terminal de control del elemento de conmutación principal, una primera resistencia se conecta entre una terminal de entrada del elemento de conmutación en el lado de potencial más bajo y una terminal de control del elemento de conmutación principal, un primer condensador se conecta paralelamente a la primera resistencia, y un segundo condensador se conecta entre un punto de conexión de la primera resistencia y una terminal de control del elemento de conmutación principal y una terminal en el lado de potencial más alto del elemento de conmutación principal.
MX2018015651A 2016-06-17 2016-06-17 Dispositivo de accionamiento. MX367703B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/068180 WO2017216974A1 (ja) 2016-06-17 2016-06-17 駆動装置

Publications (2)

Publication Number Publication Date
MX2018015651A MX2018015651A (es) 2019-03-06
MX367703B true MX367703B (es) 2019-09-03

Family

ID=60663515

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2018015651A MX367703B (es) 2016-06-17 2016-06-17 Dispositivo de accionamiento.

Country Status (10)

Country Link
US (1) US10476495B2 (es)
EP (1) EP3474449B1 (es)
JP (1) JP6729693B2 (es)
KR (1) KR101986475B1 (es)
CN (1) CN109314509B (es)
CA (1) CA3027818C (es)
MX (1) MX367703B (es)
MY (1) MY196363A (es)
RU (1) RU2706732C1 (es)
WO (1) WO2017216974A1 (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019129565A (ja) * 2018-01-23 2019-08-01 日産自動車株式会社 駆動装置
CN117637731A (zh) 2018-02-23 2024-03-01 罗姆股份有限公司 半导体装置及功率模块
EP3764527B1 (en) * 2018-03-07 2023-12-06 Nissan Motor Co., Ltd. Switching device and method for controlling switching device
JP7068993B2 (ja) * 2018-11-21 2022-05-17 三菱電機株式会社 シミュレーション回路、および、シミュレーション方法
US10924106B2 (en) * 2019-01-02 2021-02-16 General Electric Company Miller transition control gate drive circuit
JP6726337B1 (ja) * 2019-06-12 2020-07-22 ナブテスコ株式会社 スイッチング装置、アクチュエータの駆動回路装置、アクチュエータシステム
JP6772355B1 (ja) * 2019-10-15 2020-10-21 株式会社京三製作所 スイッチングモジュール
EP4318947B1 (en) * 2021-03-22 2025-07-02 Nissan Motor Co., Ltd. Drive circuit
US12334917B2 (en) * 2022-12-16 2025-06-17 United Silicon Carbide, Inc. Voltage-source gate drive having shunt capacitors and shunt resistors
KR102755422B1 (ko) * 2023-08-18 2025-01-21 주식회사 비엠씨 모터 제어회로
TWI907081B (zh) * 2024-05-08 2025-12-01 鴻海精密工業股份有限公司 閘極驅動電路及其操作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237513A (ja) * 1985-04-12 1986-10-22 Mitsubishi Electric Corp 電界効果型トランジスタの駆動回路
JPH0225107A (ja) * 1988-07-13 1990-01-26 Fuji Electric Co Ltd 半導体スイッチ素子の過電圧抑制回路
DE19913465B4 (de) * 1999-03-25 2013-07-11 Robert Bosch Gmbh Schaltungsanordnung zur Ansteuerung eines Leistungstransistors
JP3752943B2 (ja) 2000-01-31 2006-03-08 株式会社日立製作所 半導体素子の駆動装置及びその制御方法
JP3812353B2 (ja) * 2001-03-19 2006-08-23 株式会社日立製作所 半導体電力変換装置
JP2003189592A (ja) * 2001-12-12 2003-07-04 Toyoda Mach Works Ltd モータ駆動回路
US7236041B2 (en) * 2005-08-01 2007-06-26 Monolithic Power Systems, Inc. Isolated gate driver circuit for power switching devices
JP2007215389A (ja) 2006-01-12 2007-08-23 Hitachi Ltd パワー半導体素子とこれを用いた半導体回路
JP4971848B2 (ja) * 2006-03-22 2012-07-11 株式会社豊田中央研究所 低スイッチング損失、低ノイズを両立するパワーmos回路
DE102007013824B4 (de) 2006-03-22 2013-10-24 Denso Corporation Schaltkreis mit einem Transistor
JP2009011013A (ja) * 2007-06-26 2009-01-15 Hitachi Ltd 電力変換装置
JP5476028B2 (ja) 2009-04-17 2014-04-23 株式会社日立製作所 パワー半導体スイッチング素子のゲート駆動回路及びインバータ回路
JP5925434B2 (ja) * 2011-05-13 2016-05-25 東洋電機製造株式会社 ゲート駆動回路
WO2013065150A1 (ja) * 2011-11-02 2013-05-10 三菱電機株式会社 電力変換装置の駆動装置および電力変換装置の駆動方法
JP2014079086A (ja) * 2012-10-10 2014-05-01 Fuji Electric Co Ltd 電圧駆動型半導体素子の駆動回路
EP2911298A1 (en) * 2014-02-25 2015-08-26 ABB Oy Gate drive circuit with a voltage stabilizer and a method
JP6287530B2 (ja) * 2014-04-18 2018-03-07 日産自動車株式会社 駆動回路システム

Also Published As

Publication number Publication date
EP3474449A1 (en) 2019-04-24
JP6729693B2 (ja) 2020-07-29
CA3027818A1 (en) 2017-12-21
US10476495B2 (en) 2019-11-12
BR112018076115A2 (pt) 2019-03-26
EP3474449B1 (en) 2020-11-18
JPWO2017216974A1 (ja) 2019-05-23
WO2017216974A1 (ja) 2017-12-21
US20190181854A1 (en) 2019-06-13
MY196363A (en) 2023-03-27
KR20190007024A (ko) 2019-01-21
CA3027818C (en) 2024-04-23
RU2706732C1 (ru) 2019-11-20
MX2018015651A (es) 2019-03-06
KR101986475B1 (ko) 2019-06-05
CN109314509A (zh) 2019-02-05
EP3474449A4 (en) 2019-12-11
CN109314509B (zh) 2020-03-10

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