WO2022190916A1 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
WO2022190916A1
WO2022190916A1 PCT/JP2022/008127 JP2022008127W WO2022190916A1 WO 2022190916 A1 WO2022190916 A1 WO 2022190916A1 JP 2022008127 W JP2022008127 W JP 2022008127W WO 2022190916 A1 WO2022190916 A1 WO 2022190916A1
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WIPO (PCT)
Prior art keywords
curable resin
wafer
resin layer
layer
bump
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PCT/JP2022/008127
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English (en)
French (fr)
Japanese (ja)
Inventor
智則 篠田
拓 根本
章生 加太
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リンテック株式会社
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Priority to JP2023505294A priority Critical patent/JPWO2022190916A1/ja
Priority to CN202280018923.2A priority patent/CN116918037A/zh
Publication of WO2022190916A1 publication Critical patent/WO2022190916A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices

Definitions

  • the present invention relates to a method of manufacturing a semiconductor device. More specifically, the present invention relates to a method of manufacturing a semiconductor device in which chips are obtained by singulating a wafer by a pre-dicing process and a protective film is formed on the back surface of the chips.
  • semiconductor devices have been manufactured using a so-called face-down mounting method.
  • a semiconductor chip having bumps on its circuit surface and a substrate for mounting the semiconductor chip are laminated so that the circuit surface of the semiconductor chip and the substrate face each other, thereby mounting the semiconductor chip. It is mounted on the board.
  • the semiconductor chip is usually obtained by singulating a semiconductor wafer having bumps on its circuit surface.
  • a method of obtaining a wafer with high thickness accuracy and few cracks and the like is also adopted.
  • a protective film, a curable resin, and a carrier are provided so as to embed the protrusions on the surface of the wafer having the protrusions, and after curing the curable resin, the protrusions of the wafer are A method is disclosed for grinding the side opposite the side having the section.
  • grooves are provided in advance on the bump-formed surface of the wafer, or a modified region is provided inside the wafer by laser or the like, and when the back surface of the wafer is ground, the ground surface reaches the grooves.
  • pre-dicing process A so-called pre-dicing process is adopted in which the wafer is separated into chips by cleaving the wafer starting from the modified region by the vibration of the wafer.
  • the pre-dicing process reduces the number of individual chip handling steps and is suitable for manufacturing thinner chips.
  • the pre-dicing process generally refers to a process in which grooves are provided on the bump formation surface, but in this specification, a preliminary process for singulating the wafer is performed prior to the grinding process. This is taken in a broad sense, and includes the process of providing a modification treatment inside the wafer.
  • the surface of the chip opposite to the bump forming surface is exposed. is preferably provided, and it has been desired to easily form the protective film in a shape corresponding to the chip.
  • the present invention has been made in view of such problems, and provides a semiconductor device that can easily obtain a protective film or the like formed on the surface of a chip opposite to the bump forming surface, in a shape corresponding to the chip.
  • An object of the present invention is to provide a method for manufacturing a device.
  • the inventors of the present invention conceived that the protective film can also be obtained in a shape corresponding to the chip by providing a separate step of cutting the protective film or the like provided on the back surface of the chip after the grinding process described above. We have completed the manufacturing method of the invention.
  • the present invention relates to the following [1] to [10].
  • [1] including the following steps (S1) to (S6) in this order, Step (S1): A wafer having a bump forming surface with bumps on one surface, the bumps of the wafer having grooves provided on the bump forming surface or a modified region formed inside the wafer, and the Step/step (S2) of forming the first curable resin layer (X1) so as to be detachable from the wafer so as to cover the bump forming surface: What is the bump forming surface of the first curable resin layer (X1)?
  • Step/step (S3) of flattening the surface on the opposite side Step/step (S4) of curing the first curable resin layer (X1) to form a cured material layer (p1) for grinding: , grinding the surface on the side opposite to the bump-formed surface and singulating into a plurality of chips along the groove or the modified region (S5): the bump-formed surface of the plurality of chips;
  • a second curable resin film (x2f) is attached to the surface opposite to the second curable resin layer (X2).
  • Step (SD) A step of cutting the second curable resin layer (X2) or the protective film (r) along the intervals between the plurality of chips to divide them into shapes corresponding to the respective chips
  • Step (S2) is the step of further laminating a supporting substrate (Y1) on the first curable resin layer (X1).
  • Step (SD) cutting the second curable resin layer (X2) or the protective film (r) with a laser, or cutting a plurality of the second curable resin layer (X2) or the protective film (r)
  • An extensible film is attached to the surface opposite to the surface on which the chip is laminated, and the second curable resin layer (X2) or the protective film (r) is cut by stretching the extensible film.
  • [4] The method of manufacturing a semiconductor device according to any one of [1] to [3], further including the following step (SP) after step (S5).
  • the step of forming an easily peelable layer (p2) on the bump forming surface [7]
  • the easily peelable layer (p2) is an easily peelable layer film (p2f), according to [6].
  • a method of manufacturing a semiconductor device [8]
  • the wafer is a wafer having grooves provided on the bump forming surface, and in the step (SC), an easy-peeling layer forming composition for forming an easy-peeling layer (p2) is applied to the wafer.
  • step (SP) an adhesive sheet is attached to the surface of the second curable resin layer (X2) or the protective film (r) opposite to the surface attached to the plurality of chips.
  • a first curable resin layer (X1) can be peeled off from the wafer so as to cover the bumps and the bump-forming surface of the wafer having a bump-forming surface with bumps on one surface.
  • the present invention it is possible to provide a method of manufacturing a semiconductor device, which can easily obtain a protective film formed on the surface of the chip opposite to the bump forming surface, in a shape corresponding to the chip. Become.
  • FIG. 1A to 1D are process schematic diagrams according to one aspect (first manufacturing method) of a method for manufacturing a semiconductor device of the present invention
  • 1 is a top view showing an example of a chip fabrication wafer used in one embodiment of the present invention
  • FIG. 1 is a schematic cross-sectional view showing an example of a chip fabrication wafer used in one embodiment of the present invention
  • FIG. It is a schematic sectional drawing which shows an example of the laminated body obtained through process (S1).
  • 1 is a schematic diagram of one embodiment of steps (S1) to (S3);
  • FIG. It is the schematic of the one aspect
  • FIG. 4 is a schematic diagram of one embodiment of steps (S5) to (S6); It is a schematic sectional drawing of a 2nd hardening resin film (x2f).
  • Fig. 2 is a schematic cross-sectional view showing the configuration of a second composite sheet ( ⁇ 2);
  • 1 is a schematic diagram of one embodiment of a process including steps (SD) and (SP);
  • FIG. 4 is a schematic diagram of another aspect of the process including steps (SD) and (SP);
  • FIG. 4 is a schematic cross-sectional view showing an example of a laminate obtained through steps (SC) and (S1);
  • 1A to 1D are process schematic diagrams according to one aspect (second manufacturing method) of a method for manufacturing a semiconductor device of the present invention;
  • the term “semiconductor device” refers to a chip having a protective film or the like formed on its back surface and a device containing the chip. It refers to all devices that can function by using the characteristics of semiconductors.
  • the term “active ingredient” refers to a component excluding a diluent solvent such as water or an organic solvent among the components contained in the target composition.
  • a weight average molecular weight is a polystyrene conversion value measured by a gel permeation chromatography (GPC) method.
  • GPC gel permeation chromatography
  • FIG. 1 shows a schematic process diagram of one mode of the method for manufacturing a semiconductor device of the present invention (hereinafter also referred to as "first manufacturing method").
  • One aspect of the method for manufacturing a semiconductor device of the present invention includes the following steps (S1) to (S6) in this order, Step (S1): A wafer having a bump forming surface with bumps on one surface, the bumps of the wafer having grooves provided on the bump forming surface or a modified region formed inside the wafer, and the Step/step (S2) of forming the first curable resin layer (X1) so as to be detachable from the wafer so as to cover the bump forming surface: What is the bump forming surface of the first curable resin layer (X1)?
  • Step/step (S3) of flattening the surface on the opposite side Step/step (S4) of curing the first curable resin layer (X1) to form a cured material layer (p1) for grinding: , grinding the surface on the side opposite to the bump-formed surface and singulating into a plurality of chips along the groove or the modified region (S5): the bump-formed surface of the plurality of chips;
  • a second curable resin film (x2f) is attached to the surface opposite to the second curable resin layer (X2).
  • step (SD) is included after the step (S5).
  • the step (SD) is preferably included after the step (S6).
  • step (SP) may be included after the step (S4), and the step (SP) may be included after the step (S5). Preferably, it is more preferably included after the step (S6).
  • step (SC) A step of forming an easily peelable layer (p2) on the bump forming surface. ) can be included.
  • step (S1) a wafer having a bump-formed surface having bumps on one surface thereof, the bumps of the wafer having grooves provided on the bump-formed surface or a modified region formed inside the wafer and the A first curable resin layer (X1) is formed releasably from the wafer so as to cover the bump forming surface.
  • FIG. 1 A schematic top view of the wafer is shown in FIG. 2, and a schematic cross-sectional view thereof is shown in FIG.
  • the wafer shown in FIGS. 2 and 3 is a wafer 10 in which grooves 13 are formed on the bump forming surface 11a of the wafer 11, which has a bump forming surface 11a having bumps 12 on one surface thereof, without reaching the wafer rear surface 11b. -1 (hereinafter also referred to as “chip fabrication wafer 10-1”).
  • chip fabrication wafer 10-1 hereinafter also referred to as “chip fabrication wafer 10-1”.
  • a plurality of grooves 13 are formed in a grid pattern on the bump formation surface 11a of the chip fabrication wafer 10-1 shown in FIGS. 2 and 3 as dividing lines for singulating the chip fabrication wafer 10-1. It is The plurality of grooves 13 are cut grooves formed when the pre-dicing process is applied, and are formed to a depth shallower than the thickness of the wafer 11 so that the deepest part of the grooves 13 does not reach the wafer back surface 11b. there is The plurality of grooves 13 can be formed, for example, by dicing using a conventionally known wafer dicing device equipped with a dicing blade, a laser dicing device, or the like.
  • the plurality of grooves 13 may be formed so that the chip to be manufactured has a desired size and shape, and the grooves 13 do not necessarily have to be formed in a lattice pattern as shown in FIG. Also, the size of the chip is usually about 0.5 mm ⁇ 0.5 mm to 10 mm ⁇ 10 mm, but is not limited to this size.
  • the width of the grooves 13 is preferably 10 ⁇ m to 2,000 ⁇ m, more preferably 30 ⁇ m to 1,000 ⁇ m, even more preferably 40 ⁇ m to 500 ⁇ m, still more preferably 50 ⁇ m to 300 ⁇ m.
  • the depth of the groove 13 is adjusted according to the thickness of the wafer to be used and the required chip thickness, preferably 30 ⁇ m to 700 ⁇ m, more preferably 60 ⁇ m to 600 ⁇ m, still more preferably 100 ⁇ m to 500 ⁇ m.
  • the aspect ratio of the grooves 13 may be 2-6, 2.5-5, or 3-5.
  • a wafer having a modified region formed inside the wafer (hereinafter also referred to as "chip fabrication wafer 10-2", not shown).
  • the modified region may be formed, for example, by performing the following step (W) before step (S1).
  • Step (W) Step of Forming a Modified Region Inside the Wafer
  • the formation of the modified region can be performed by laser or plasma irradiation focused on the inside of the wafer.
  • the laser or plasma irradiation may be performed from the bump forming surface side of the wafer, or may be performed from the back surface side of the wafer.
  • the shape of the bumps 12 is not particularly limited in any of the wafers described above, and may be of any shape as long as it can be brought into contact with and fixed to the electrodes or the like on the substrate for chip mounting. good too.
  • bumps 12 are spherical in the figures of this specification, bumps 12 may be spheroids.
  • the height of the bumps 12 is not particularly limited, and can be changed as appropriate according to design requirements. By way of example, it is preferably 30 ⁇ m to 300 ⁇ m, more preferably 60 ⁇ m to 250 ⁇ m, still more preferably 80 ⁇ m to 200 ⁇ m. Note that the "height of the bump 12" means the height at the highest position from the bump forming surface 11a when focusing on one bump.
  • the number of bumps 12 is also not particularly limited, and can be changed as appropriate according to design requirements.
  • the wafer 11 is, for example, a wafer on which circuits such as wiring, capacitors, diodes, and transistors are formed.
  • the material of the wafer is not particularly limited, for example, a silicon wafer, a silicon carbide wafer, a compound semiconductor wafer, and a so-called fan-out wafer level package (FO-WLP) in which semiconductor chips are rearranged and sealed. wafers, panel level package (PLP) panels, and the like.
  • the size of the wafer 11 is not particularly limited, but may be circular with a diameter of 8 inches (200 mm) or 12 inches (300 mm). can be done.
  • the thickness of the wafer 11 is not particularly limited, but from the viewpoint of making it easier to suppress warping due to shrinkage when the first curable resin layer (X1) is cured, the amount of grinding of the back surface 11b of the wafer 11 in the subsequent process can be suppressed. From the viewpoint of shortening the time required for back grinding, the thickness is preferably 100 ⁇ m to 1,000 ⁇ m, more preferably 200 ⁇ m to 900 ⁇ m, and still more preferably 300 ⁇ m to 800 ⁇ m.
  • FIG. 4 is a schematic cross-sectional view showing an example of a laminate in which a first curable resin layer (X1) is formed on the bump forming surface 11a of the chip fabrication wafer 10-1 obtained through the step (S1). .
  • the first curable resin layer (X1) is filled up to the inside of the groove 13, and covers the bumps 12 and the bump forming surface 11a.
  • the first curable resin layer (X1) is directly formed.
  • the term “direct formation” means, for example, in the case of the laminate shown in FIG. bump 12 and bump forming surface 11a.
  • the first curable resin layer (X1) is formed directly on the bumps 12 and the bump forming surface 11a, but an easy peeling layer (p2), which will be described later, is formed on the bump forming surface of the wafer.
  • the first curable resin layer (X1) may be formed on the bumps 12 and the bump forming surface 11a via the easy peeling layer (p2). That is, the first curable resin layer (X1) is formed directly on the bump forming surface 11a, or formed on the bump forming surface 11a via the easy peeling layer (p2).
  • the method for forming the first curable resin layer (X1) is not particularly limited. and onto the bump forming surface 11a.
  • a coating method such as a dip coating method may be used.
  • a first curable resin film (x1f) (hereinafter referred to as "resin film (x1f)") in the form of a film obtained by applying the first curable resin (x1) on a supporting substrate ) is prepared in advance, and a resin film (x1f) is adhered onto the bumps 12 and the bump forming surface 11a.
  • a method of forming using the first composite sheet ( ⁇ 1) may be used, or the following method described in Patent Literature 1 described above may be used.
  • a flexible first curing resin (x1) is provided on a supporting substrate (Y1), and the flexible first curing resin (x1) is opposed to the bump formation surface of the wafer, and the bump formation surface or The easily peelable layer (p2), which will be described later, is brought into contact with the flexible first curable resin (x1). In this way, the bumps provided on the wafer are embedded in the flexible first curing resin (x1).
  • the thickness of the first curable resin layer (X1) is preferably 50 ⁇ m or more, more preferably 100 ⁇ m or more, and even more preferably 200 ⁇ m or more. Also, it is preferably 1,000 ⁇ m or less, more preferably 800 ⁇ m or less. Details of the first curable resin (x1) and the first composite sheet ( ⁇ 1) for forming the grinding hardened layer (p1) will be described later in step (S3).
  • Step (S2) the surface of the first curable resin layer (X1) opposite to the bump forming surface is flattened.
  • a method of further laminating a supporting substrate (Y1) on the first curable resin layer (X1) is preferable.
  • FIG. 5 shows an outline of a preferred aspect of the step (S2) when using the chip fabrication wafer 10-1.
  • FIG. 5(a) shows a schematic cross-section of a laminate obtained by laminating a support substrate (Y1) on a first curable resin layer (X1) after or simultaneously with the step (S1) through the step (S2). Represents a diagram. For example, as shown in FIG.
  • a support substrate (Y1) is laminated on the surface (surface opposite to the bump forming surface 11a) of the first curable resin layer (X1).
  • the surface of the first curable resin layer (X1) becomes smooth, and the cured material layer for grinding (p1) obtained by curing the first curable resin layer (X1) in the subsequent step (S3).
  • the surface can be smoothed.
  • the pressure applied to the wafer is easily distributed uniformly when grinding the back surface of the wafer in step (S4), and the risk of wafer breakage is further reduced. Also, it is preferable from the viewpoint that a wafer having a more uniform thickness can be easily obtained.
  • the supporting substrate (Y1) may be a resin film such as a polyethylene terephthalate film, or a rigid substrate made of a material such as silicon, glass, or stainless steel.
  • step (S2) may be performed after step (S1) and before step (S3), or step (S2) may be performed simultaneously with step (S1).
  • step (S2) may be performed simultaneously with the step (S1), for example, the first composite sheet ( ⁇ 1) having a laminated structure in which the support substrate (Y1) and the resin film (x1f) are laminated is subjected to the first curing.
  • a method of pressing the adhesive resin layer (X1) onto the bumps 12 and the bump-formed surface 11a for attachment can be used.
  • the timing of peeling off the supporting base material (Y1) is the surface of the first curable resin layer (X1) opposite to the bump forming surface. is not particularly limited as long as the surface can be flattened, but it is preferable to peel off after forming the grinding hardened material layer (p1) in the step (S3).
  • step (S3) the first curable resin layer (X1) is cured to form a cured material layer for grinding (p1).
  • FIG. 5 shows an outline of a preferred aspect of the step (S3) when using the chip fabrication wafer 10-1.
  • FIG. 5(a) is as described above, and as a preferred embodiment of the step (S3), the first curable resin layer (X1) in the laminate shown in FIG. 5(a) is cured, A hardened material layer for grinding (p1) can be formed.
  • FIG. 5B the hardened material layer for grinding (p1) is formed so as to cover the bumps 12 and the bump forming surface 11a.
  • the hardened material layer for grinding (p1) is mainly used to reduce the risk of damage to the bumps 12 and the wafer 11 when grinding the back surface 11b of the wafer in the subsequent step (S4). Also, during the grinding process, it becomes easier to obtain wafers with higher thickness accuracy and chips separated from the wafers.
  • the hardened material layer for grinding (p1) is peeled off in the step (SP) to be described later after the grinding treatment in the step (S4). That is, as described above, the hardened material layer for grinding (p1) is a peelable layer.
  • the first curable resin (x1) is preferably an energy ray curable resin.
  • energy ray means an electromagnetic wave or charged particle beam that has energy quanta. Examples of energy rays include ultraviolet rays, radiation, electron beams, and the like.
  • Ultraviolet rays can be applied by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, an LED lamp, or the like as an ultraviolet light source.
  • the electron beam can be generated by an electron beam accelerator or the like.
  • the thickness of the hardened material layer for grinding (p1) is preferably 50 ⁇ m or more, more preferably 100 ⁇ m or more, and even more preferably 200 ⁇ m or more. Also, it is preferably 1,000 ⁇ m or less, more preferably 800 ⁇ m or less.
  • the surface of the grinding hardened material layer (p1) formed in step (S3) is preferably smooth, and , from the same point of view, it is more preferable that the surface of the grinding hardened material layer (p1) is formed so as to be parallel to the back surface of the wafer.
  • the first curable resin (x1) described above in steps (S1) to (S3) includes thermosetting and energy ray-curable resins, and has both thermosetting and energy ray-curable properties. You may have The first curable resin layer (X1) formed from the first curable resin (x1) is cured to form the cured material layer for grinding (p1).
  • the material constituting the first curable resin (x1) is a cured material layer for grinding (p1) obtained by curing the first curable resin layer (X1), and the pressure during grinding in the step (S4) described later is It is not particularly limited as long as it has a function of protecting the bumps and the wafer from vibration and the like, and can be peeled off in the step (SP) described later.
  • the cured material layer (p1) for grinding may be one having viscoelasticity like rubber, or may be a resin having rigidity and reaching a hard state.
  • the first curable resin (x1) may contain components other than components involved in curing, such as a viscosity adjusting component, a film-forming component, and an adhesiveness adjusting component.
  • preferred embodiments of the first curable resin (x1) include "ResiFlat (registered trademark)" (trade name, manufactured by DISCO Corporation), "TEMPLOC (registered trademark)” (trade name, manufactured by Denka Co., Ltd.), and the like. is mentioned.
  • the first composite sheet ( ⁇ 1) is not particularly limited as long as it has a structure capable of forming the first curable resin layer (X1). , and the resin film (x1f) are laminated. However, the resin film (x1f) of the first composite sheet ( ⁇ 1) is made of the same material as the first curable resin (x1).
  • the resin film (x1f) may consist of one layer (single layer), or may consist of two or more layers. When the resin film (x1f) is composed of multiple layers, these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.
  • the thickness of the resin film (x1f) is preferably 50 ⁇ m or more, more preferably 100 ⁇ m or more, still more preferably 200 ⁇ m or more, from the viewpoint of improving the coverage of the bumps and the bump-formed surface of the wafer. Also, it is preferably 1,000 ⁇ m or less, more preferably 800 ⁇ m or less.
  • the "thickness of the resin film (x1f)" means the thickness of the entire resin film (x1f). means the total thickness of all the layers that make up the
  • the first support sheet (Z1) used for the first composite sheet ( ⁇ 1) will be described below.
  • the first support sheet (Z1) functions as a support for supporting the resin film (x1f) and also functions as a support substrate (Y1).
  • the first support sheet (Z1) preferably has excellent heat resistance from the viewpoint of suppressing shrinkage and melting during the thermosetting step.
  • the resin film (x1f) is energy ray-curable
  • the first support sheet (Z1) preferably has energy ray transparency.
  • the base material of the first support sheet (Z1) and the pressure-sensitive adhesive layer that the first support sheet (Z1) may have are described below.
  • the substrate is in the form of a sheet or film, and examples of constituent materials thereof include the following various resins.
  • resins constituting the substrate include polyolefins, ethylene copolymers, vinyl chloride resins (resins obtained using vinyl chloride as a monomer), polyethylene terephthalate, urethane resins, and the like.
  • the resin constituting the base material for example, a crosslinked resin obtained by crosslinking one or more of the resins exemplified so far; one or two of the resins exemplified so far Modified resins such as ionomers using the above are also included.
  • the resin constituting the substrate may be used singly or in combination of two or more. When two or more types of resins are used to form the base material, the combination and ratio thereof can be arbitrarily selected.
  • the base material may have only one layer (single layer), or may have multiple layers of two or more layers. When the substrate has multiple layers, these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.
  • the thickness of the substrate is preferably 5 ⁇ m to 1,000 ⁇ m, more preferably 10 ⁇ m to 500 ⁇ m, even more preferably 15 ⁇ m to 300 ⁇ m, and even more preferably 20 ⁇ m to 150 ⁇ m.
  • the base material has a high accuracy of thickness, that is, the thickness variation is suppressed irrespective of the part.
  • materials with high thickness accuracy include polyolefin, polyethylene terephthalate, and ethylene-based copolymers.
  • a base material can be manufactured by a well-known method. For example, a substrate containing a resin can be produced by molding a resin composition containing the resin.
  • Adhesive layer As the adhesive contained in the adhesive layer, for example, acrylic resin (adhesive made of a resin having a (meth)acryloyl group), urethane resin (adhesive made of a resin having a urethane bond), rubber resin ( adhesives composed of resins having a rubber structure), silicone-based resins (adhesives composed of resins having siloxane bonds) and the like. Among these, adhesives containing acrylic resins are preferable.
  • the adhesive layer may be formed using an energy ray-curable adhesive or may be formed using a non-energy ray-curable adhesive.
  • a pressure-sensitive adhesive layer formed using an energy ray-curable pressure-sensitive adhesive can easily adjust physical properties before and after curing.
  • the first composite sheet ( ⁇ 1) can be produced by successively laminating each of the layers described above so as to have a corresponding positional relationship. For example, when laminating a pressure-sensitive adhesive layer on a substrate when manufacturing the first support sheet (Z1), the pressure-sensitive adhesive composition is applied onto the substrate and dried as necessary, Alternatively, the pressure-sensitive adhesive layer can be laminated by irradiating energy rays.
  • the composition for forming the first curable resin film is placed on the adhesive layer It is possible to directly form a resin film (x1f) by coating an object.
  • the first curable resin layer (X1) or the pressure-sensitive adhesive layer may be prepared in advance as a single layer by coating, and may be laminated on the pressure-sensitive adhesive layer or substrate, respectively.
  • Step (S4) the surface of the wafer opposite to the bump-formed surface is ground to singulate a plurality of chips along the grooves or the modified regions.
  • step (S4) an outline of the case of using the laminate obtained using the chip fabrication wafer 10-1 shown in FIG. ).
  • step (S4) first, as shown in FIG. 6A, the back surface 11b of the chip fabrication wafer 10-1 is ground while the grinding hardened layer (p1) is attached.
  • "BG" in FIG. 6(a) means background grinding.
  • the chip fabrication wafer 10-1 is ground until the bottoms of the grooves 13 of the chip fabrication wafer 10-1 are exposed, whereby the chip fabrication wafer 10-1 is formed into a plurality of grooves along the grooves 13. It is singulated into chips 20 .
  • the plurality of individualized chips are held together with the hardened material layer (p1) for grinding interposed therebetween, as shown in FIG. 6(b), for example. .
  • the rear surface of the wafer is divided into individual pieces by cleaving the chip manufacturing wafer 10-2 due to the modified region. After the wafer is cleaved, the wafer is preferably ground to such an extent that the modified region disappears.
  • the chip fabrication wafer 10-2 is separated into a plurality of chips along the modified regions by cleaving due to the modified regions.
  • the thickness of the wafer after grinding in step (S4) is preferably 150 ⁇ m or less, more preferably 100 ⁇ m or less, and even more preferably 75 ⁇ m or less. Also, it is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, and still more preferably 30 ⁇ m or more.
  • step (S5) a second curable resin layer (X2) is formed on the surfaces of the plurality of chips opposite to the bump forming surfaces.
  • a second curable resin layer (X2) is formed on the surfaces of the plurality of chips opposite to the bump forming surfaces.
  • second curing is applied to the back surface 11b of the plurality of chips 20, which is the surface opposite to the bump forming surface, in a state where the grinding hardened material layer (p1) is formed.
  • a flexible resin layer (X2) is formed.
  • a second curable resin film (x2f) (hereinafter also referred to as “resin film (x2f)”) is used to form the second curable resin layer (X2).
  • the resin film (x2f) it is preferable to use the second composite sheet ( ⁇ 2) having a laminated structure in which the second support sheet (Z2) and the resin film (x2f) are laminated.
  • the hardened material layer for grinding (p1) enters the groove until it reaches the back surface of the chip, and the second hardening resin layer (X2) is formed without entering between the chips.
  • the thickness of the second curable resin layer (X2) in the portion corresponding to the space between the chips is thin, and the second curable resin layer (X2) or the protective film (r) may be cut in the step (SD).
  • the hardened material layer for grinding (p1) does not reach the back surface of the chip, or when the easily peelable layer (p2) described later covers the groove 13 so as not to reach the deep part of the groove 13,
  • the second curable resin layer (X2) may enter between the chips at least partially in the thickness direction of the chips (not shown).
  • the protective film (r) also protects the side surface of the chip at least in the vicinity of the back surface of the chip, so that the possibility of chipping of the chip can be reduced.
  • the timing for peeling the second support sheet (Z2) from the second composite sheet ( ⁇ 2) is between step (S5) and step (S6) described later. or after step (S6). Further, when the second composite sheet ( ⁇ 2) is used in step (S5), the second support sheet (Z2) of the second composite sheet ( ⁇ 2) supports the resin film (x2f) and serves as a wafer fixing sheet.
  • the second composite sheet ( ⁇ 2) is attached to the back surfaces of the plurality of chips, so that when dividing the second curable resin layer (X2) or the protective film (r) In addition, the chips are fixed by the second support sheet (Z2), making it easier to separate the second curable resin layer (X2) or the protective film (r). Further, when cutting the second curable resin layer (X2) or the protective film (r) in the step (SD) described later by stretching the second support sheet (Z2), the second support sheet (Z2) is preferably a stretchable film with expandability.
  • the thickness of the second curable resin layer (X2) is preferably 3 ⁇ m or more, more preferably 5 ⁇ m or more, and even more preferably 7 ⁇ m or more. Also, it is preferably 300 ⁇ m or less, more preferably 150 ⁇ m or less, and still more preferably 75 ⁇ m or less.
  • the second curable resin film (x2f) is not particularly limited as long as it has a film configuration capable of forming a protective film (r) on the back surface of the chip. It may have both thermosetting and energy ray-curing properties.
  • the second curable resin layer (X2) formed from the resin film (x2f) is cured by heating or energy ray irradiation to form the protective film (r).
  • FIG. 8 shows a schematic cross-sectional view of an example of the resin film (x2f).
  • the resin film (x2f) shown in FIG. 8 has a first release film 151 on one surface (hereinafter also referred to as “first surface”) x2a, and the other side opposite to the first surface x2a.
  • a second release film 152 is provided on the surface (hereinafter also referred to as “second surface”) x2b.
  • a resin film (x2f) having such a structure is suitable for storage as a roll, for example.
  • one of the first release film 151 and the second release film 152 is removed, and the resulting exposed surface becomes the sticking surface to the sticking target. Then, the remaining other of the first release film 151 and the second release film 152 is removed, and the resulting exposed surface is used for attaching the second support sheet (Z2) for constituting the second composite sheet ( ⁇ 2) described later. It can be a face. Also, the other of the first release film 151 and the second release film 152 may function as the second support sheet (Z2).
  • the resin film (x2f) may consist of one layer (single layer), or may consist of two or more layers. When the resin film (x2f) is composed of multiple layers, these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.
  • the thickness of the resin film (x2f) is preferably 3 ⁇ m or more, more preferably 5 ⁇ m or more, still more preferably 7 ⁇ m or more. Also, it is preferably 300 ⁇ m or less, more preferably 150 ⁇ m or less, and still more preferably 75 ⁇ m or less.
  • the "thickness of the resin film (x2f)" means the thickness of the entire resin film (x2f). means the total thickness of all the layers that make up the
  • the second curable resin film (x2f) can be formed using a second curable resin film-forming composition containing the constituent materials.
  • the resin film (x2f) can be formed by applying the composition for forming the second curable resin film to the surface to be formed, and drying it as necessary.
  • the content ratio of the active ingredients in the composition for forming the second curable resin film is usually the same as the content ratio of the active ingredients in the resin film (x2f).
  • the second thermosetting resin film (x2f-1) (hereinafter also referred to as “resin film (x2f-1)”) uses the second thermosetting resin film-forming composition (x2f-1-1)
  • the second energy ray-curable resin film (x2f-2) (hereinafter also referred to as “resin film (x2f-2)”) is formed by the second energy ray-curable resin film-forming composition (x2f- 2-1) can be used.
  • the second curable resin film-forming composition may be applied by a known method, for example, spin coater, spray coater, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater. , a curtain coater, a die coater, a knife coater, a screen coater, a Meyer bar coater, a kiss coater and the like.
  • Drying conditions for the composition for forming the second curable resin film are not particularly limited, regardless of whether the resin film (x2f) is thermosetting or energy ray curable.
  • the second thermosetting resin film-forming composition (x2f-1-1) and the second energy ray-curable resin film-forming composition (x2f-2-1) are described in more detail below.
  • the second thermosetting resin film-forming composition (x2f-1-1) includes, for example, a polymer component (A), a thermosetting component (B), a filler (C), and a coloring agent (A second thermosetting resin film-forming composition (x2f-1-1) containing D) and an additive (E) (hereinafter also referred to as “composition (x2f-1-1)”) etc.
  • Polymer component (A) As the polymer component (A), for example, acrylic polymers are preferable, and polyesters, phenoxy resins, polycarbonates, polyethers, polyurethanes, polysiloxanes, rubber polymers, etc. other than acrylic polymers may be used. .
  • the weight average molecular weight (Mw) of the polymer component (A) is preferably 20,000 to 3,000,000, more preferably 50,000 to 2,000,000. Polyvinyl acetal, saturated polyester resin, etc. may also be used.
  • thermosetting component (B) is a component that has thermosetting properties and thermosets the resin film (x2f-1) to form a hard cured product.
  • the thermosetting component (B) contained in the composition (x2f-1-1) and the resin film (x2f-1) may be only one type, or may be two or more types. In the above cases, the combination and ratio thereof can be selected arbitrarily.
  • the thermosetting component (B) include those containing epoxy-based thermosetting resins, polyimide resins, unsaturated polyester resins, and the like. Among these, the thermosetting component (B) preferably contains an epoxy thermosetting resin.
  • thermosetting component (B) preferably further contains thermosetting agents such as phenolic thermosetting agents and amine-based thermosetting agents, and curing accelerators such as tertiary amines, imidazoles and organic phosphines. is preferably included.
  • the thermal expansion coefficient of the cured product of the resin film (x2f-1) can be more easily For example, by optimizing the thermal expansion coefficient of the cured product of the resin film (x2f-1) for the object to be formed of the cured product, obtained using the resin film (x2f-1) Package reliability is improved. Further, by using the resin film (x2f-1) containing the filler (C), the moisture absorption rate of the cured product of the resin film (x2f-1) can be reduced and the heat dissipation can be improved. .
  • the filler (C) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
  • Preferable inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, iron oxide, silicon carbide, boron nitride; beads obtained by spheroidizing these inorganic fillers; and surface modification of these inorganic fillers. products; single crystal fibers of these inorganic fillers; glass fibers and the like.
  • the inorganic filler is preferably silica or alumina.
  • the resin film (x2f-1) and the composition (x2f-1) and the composition ( x2f-1-1) preferably contains a coloring agent (D).
  • the coloring agent (D) include known ones such as inorganic pigments, organic pigments, and organic dyes.
  • Additives (E) include, for example, rheology control agents, surfactants, and silicone oils. More specifically, examples of the rheology control agent include polyhydroxycarboxylic acid esters, polyvalent carboxylic acids, and polyamide resins. Examples of the surfactant include modified siloxane. In addition, the acrylic polymer corresponding to the polymer component (A) described above may function as a surfactant.
  • silicone oil examples include aralkyl-modified silicone oil, modified polydimethylsiloxane, and the like, and the modifying group includes an aralkyl group; a polar group such as a hydroxy group; a group having an unsaturated bond such as a vinyl group and a phenyl group.
  • additives (E) other than those described above include coupling agents, cross-linking agents, leveling agents, plasticizers, antistatic agents, antioxidants, ion scavengers, gettering agents, ultraviolet absorbers, adhesives, Various other general purpose additives are also included, such as imparting agents, chain transfer agents, and the like.
  • the coupling agent is preferably a compound that reacts with the functional group of the compound contained in the polymer component or the thermosetting component, more preferably a silane coupling agent.
  • thermosetting resin film-forming composition (x2f-1-1) Method for producing second thermosetting resin film-forming composition (x2f-1-1)
  • the composition for forming the second thermosetting resin film (x2f-1-1) is obtained by blending each component for constituting it. There are no particular restrictions on the order of addition of each component when blending, and two or more components may be added at the same time. You may dilute the mixture of each component with an organic solvent etc. suitably.
  • composition (x2f-2-1) a second energy ray-curable component (a), a filler, a coloring agent, and an additive Two-energy ray-curable resin film-forming composition (x2f-2-1) (hereinafter also referred to as “composition (x2f-2-1)”) and the like.
  • the energy ray-curable component (a) is a component that is cured by irradiation with energy rays.
  • the energy ray-curable component (a) for example, a polymer (a1) having an energy ray-curable group and having a weight average molecular weight of 80,000 to 2,000,000, and an energy ray-curable group, A compound (a2) having a weight average molecular weight of 100 to 80,000 can be mentioned. At least a part of the polymer (a1) may be crosslinked with a crosslinking agent, or may not be crosslinked.
  • energy ray-curable groups include functional groups having unsaturated carbon bonds such as acryloyl groups, methacryloyl groups and vinyl groups.
  • the thermal expansion coefficient of the cured product of the resin film (x2f-2) can be adjusted more easily.
  • the thermal expansion coefficient of the cured product of the resin film (x2f-2) is better.
  • the moisture absorption rate of the cured product of the resin film (x2f-2) can be reduced and the heat dissipation can be improved.
  • the filler contained in the composition (x2f-2-1) and the resin film (x2f-2) is the filler contained in the composition (x2f-1-1) and the resin film (x2f-1) described above. Same as material (C).
  • the mode of containing the filler in the composition (x2f-2-1) and the resin film (x2f-2) is the content of the filler (C) in the composition (x2f-1-1) and the resin film (x2f-1). It may be the same as the mode of containing.
  • the filler contained in the composition (x2f-2-1) and the resin film (x2f-2) may be only one type, or may be two or more types. Any combination and ratio thereof can be selected.
  • the colorant contained in the composition (x2f-2-1) and the resin film (x2f-2) is the colorant contained in the composition (x2f-1-1) and the resin film (x2f-1) described above. Same as (D).
  • the additive contained in the composition (x2f-2-1) and the resin film (x2f-2) is the additive contained in the composition (x2f-1-1) and the resin film (x2f-1) described above. Same as (E).
  • the composition (x2f-2-1) and the resin film (x2f-2) contain the energy ray-curable component (a), the filler, the colorant, and It may contain other components that do not fall under any of the above additives.
  • the other component include a polymer having a weight average molecular weight of 80,000 to 2,000,000, a thermosetting component, a photopolymerization initiator, and the like, which do not have an energy ray-curable group.
  • the resin film (x2f-2) can adhere to the adherend by heating.
  • a polymer having a weight average molecular weight of 80,000 to 2,000,000 and having no energy ray-curable group has an energy ray-curable group and has a weight average molecular weight of 100 as the energy ray-curable component (a). It is preferably used together when compound (a2) of ⁇ 80,000 is used.
  • composition for forming the second energy ray-curable resin film (x2f-2-1) is obtained by blending each component for constituting this.
  • Composition (x2f-2-1) can be produced, for example, in the same manner as composition (x2f-1-1) described above, except that the types of ingredients are different.
  • FIG. 9 shows a configuration example of the second composite sheet ( ⁇ 2).
  • the second composite sheet ( ⁇ 2) is a second composite sheet ( ⁇ 2) in which the second support sheet (Z2) is a base material and the second curable resin layer (X2) is provided on one side of the base material. Also, as described above, the resin film (x2f) is laminated with the second support sheet (Z2) as the second curable resin layer (X2) to form the second composite sheet ( ⁇ 2). can be done.
  • the second composite sheet ( ⁇ 2) has the second support sheet (Z2) as the base material, and the second curable resin layer (X2) is provided on one side of the base material, as described above. It may be in the form of Further, as described in the description of the first composite sheet ( ⁇ 1), the second support sheet (Z2) may have an adhesive layer in addition to the base material. The substrate and adhesive layer of the second support sheet (Z2) may have the same configuration and material as the substrate and adhesive layer of the first support sheet (Z1).
  • a commercially available product may be used as the second curable resin film (x2f) or the second composite sheet ( ⁇ 2).
  • "Adwill LC tape” manufactured by Lintec Corporation can be used.
  • step (S6) the second curable resin layer (X2) is cured to form a protective film (r).
  • a protective film (r ) For example, as shown in FIG. 7B, a protective film (r ).
  • Curing of the second curable resin layer (X2) can utilize, for example, heat curing or energy ray curing depending on the type of curable component contained in the second curable resin film (x2f). , both heat curing and energy ray curing may be performed.
  • the heating temperature during curing is preferably 100 to 200 ° C., more preferably 110 to 170 ° C., and further It is preferably 120 to 150°C.
  • the heating time for thermosetting is preferably 0.5 to 6 hours, more preferably 0.5 to 5 hours, and still more preferably 1 to 4 hours.
  • the illuminance of the energy ray is preferably 5 to 4,000 mW/cm 2 , and preferably 50 to 1 ,000 mW/cm 2 and even more preferably 180 to 280 mW/cm 2 .
  • the amount of energy rays during the curing is preferably 100 to 4,000 mJ/cm 2 , more preferably 200 to 2,000 mJ/cm 2 , and more preferably 450 to 1,000 mJ/cm 2 . is more preferable.
  • the thickness of the protective film (r) is preferably 3 ⁇ m or more, more preferably 5 ⁇ m or more, and even more preferably 7 ⁇ m or more. Also, it is preferably 300 ⁇ m or less, more preferably 150 ⁇ m or less, and still more preferably 75 ⁇ m or less.
  • laser marking may be performed on the second curable resin layer (X2) or the protective film (r).
  • Laser marking is a method of marking by scraping off the surface of the second curable resin layer (X2) or the protective film (r) opposite to the surface on which a plurality of chips are laminated by laser irradiation. Laser marking may be performed after step (S5) or (S6), but preferably after step (S6).
  • Step (SD) the second curable resin layer (X2) or the protective film (r) is cut along the intervals between the plurality of chips to divide into shapes corresponding to each chip.
  • Step (SD) is performed after step (S5), and preferably after step (S6).
  • step (SD) as a method of cutting the second curable resin layer (X2) or the protective film (r) along the intervals between the plurality of chips to divide them into shapes corresponding to each chip, for example, blade dicing , laser dicing, plasma dicing, etc., can be employed.
  • the chip spacing Confirmation for example, in the case of the laminate shown in FIG.
  • the light transmittance of the second curable resin layer (X2) or the protective film (r) at a wavelength of 1,600 nm is preferably 25% or more, more preferably 40% or more, More preferably 50% or more.
  • the light transmittance is a value measured without using an integrating sphere, and a spectrophotometer is used as a measuring instrument.
  • a spectrophotometer for example, UV-VIS-NIR SPECTROPHOTOMETER UV-3600 manufactured by SHIMADZU can be used. Measurements are taken without
  • a plurality of chips of the second curable resin layer (X2) or the protective film (r) are laminated in a laminate composed of the second curable resin layer (X2) or the protective film (r) and a plurality of chips.
  • a method of cutting the second curable resin layer (X2) or protective film (r) by pasting an extensible film on the surface opposite to the surface on which it is placed and stretching the extensible film (hereinafter referred to as "expand breaking ) can also be adopted.
  • expand breaking can also be adopted.
  • laser dicing, plasma dicing, or expand cutting is preferable, and laser dicing or expand cutting is more preferable, from the viewpoint of preventing the blade from contacting the chip and improving productivity.
  • the wafer for chip production 10-2 when used as the wafer, there is no gap between the chips after the wafer for chip production 10-2 is cleaved due to the modified region and separated into individual chips. Since it may be difficult to pass a blade for blade dicing, a laser for laser dicing, or the like through the gap, it is preferable to employ expand cutting. Moreover, when expanding and splitting, it is preferable to previously form a modified region inside the second curable resin layer (X2) or the protective film (r). The modified region can be formed by laser or plasma irradiation focused on the inside of the second curable resin layer (X2) or protective film (r).
  • the expanding and cutting may be performed while heating or cooling the second curable resin layer (X2) according to the properties of the second curable resin layer (X2).
  • expanding and cutting may be performed while heating or cooling the protective film (r) according to the properties of the protective film (r).
  • the second support sheet (Z2) of the second composite sheet ( ⁇ 2) may be used as a stretchable film.
  • FIG. 10 shows an outline of a preferred mode in which the step (SD) is performed after the step (S6) when the chips 20 obtained using the chip fabrication wafer 10-1 are used.
  • FIG. 10 shows an example of performing the step (SD) in a state in which the stack of the protective film (r) and the plurality of chips 20 is supported by the ring frame 50 via the adhesive sheet 40. showing.
  • the surfaces of the plurality of chips 20 on which the hardened material layer (p1) for grinding is formed are opposite to the bump-formed surfaces.
  • a laminate having a protective film (r) formed on the back surface 11b is prepared.
  • the adhesive sheet 40 is attached to the surface of the protective film (r) of the laminate opposite to the surface attached to the plurality of chips.
  • the adhesive sheet 40 is not particularly limited as long as it can support a laminate of the protective film (r) and the plurality of chips 20.
  • an adhesive layer 41 is provided on one surface of the base material 42 and a protective film (r) is attached on the adhesive layer 41 .
  • the second support sheet (Z2) may be used as the adhesive sheet 40 in the second composite sheet ( ⁇ 2) described above.
  • the adhesive sheet 40 is preferably one size larger than the laminate of the protective film (r) and the plurality of chips 20 . Since the adhesive sheet 40 is in such a mode, the laminated body of the protective film (r) and the plurality of chips 20 is arranged in the central region, and the adhesive layer 41 is formed in the outer peripheral region surrounding the central region. Since it is exposed, it can be easily attached to the ring frame 50 via the adhesive layer 41 .
  • the protective film (r) itself is one size larger than the region where a plurality of chips exist (that is, the outer periphery of the wafer before chipping), and the chips of the protective film (r) are bonded together.
  • An adhesive layer for bonding to the ring frame 50 may be provided on the outer edge of the surface on the side where the chips are not present, and the chip may be attached to the ring frame 50 via the adhesive layer (not shown). .
  • the surface of the protective film (r) opposite to the surface to which the plurality of chips 20 are attached is ground while the adhesive sheet 40 is attached.
  • the hardened material layer (p1) for the semiconductor device is peeled off from the individual chips 20 . That is, the step (SP) is performed. Details of the step (SP) will be described later.
  • the cured material layer for grinding (p1) is peeled off with the adhesive sheet 40 attached, and the exposed protective film (r) is placed in the groove 13 of the wafer 11.
  • the protective film (r) is divided into shapes corresponding to the respective chips by cutting along the portions where the protective film (r) was formed.
  • the cutting method the various methods described above can be used, and when the expand splitting method is employed, it is preferable to use the adhesive sheet 40 as an extensible film.
  • the step (SD) when the step (SD) is expanded and fractured, the step (SP) is preferably performed before the step (SD).
  • the step (SP) may be performed before or after the step (SD), but should be performed before the step (SD). is preferred.
  • FIG. 11 shows another preferred embodiment of the case where the chip 20 obtained using the chip fabrication wafer 10-1 is used and the step (SD) is performed after the step (S6). outline. Specifically, FIG. 11 shows an example of the case where the step (SD) is directly performed using the laminate of the protective film (r) and the plurality of chips 20 .
  • the steps (S6) the surfaces of the plurality of chips 20 on which the hardened material layer (p1) for grinding is formed are opposite to the bump-formed surfaces. A laminate having a protective film (r) formed on the back surface 11b is prepared.
  • the protective film (r) can be divided into shapes corresponding to each chip.
  • a cutting method the various methods described above can be used.
  • a laminate (semiconductor device) 30 of the divided protective film (r) and the chip is obtained.
  • the cut portion 14 of the protective film (r) only needs to be cut, and the cut portion 14 may reach the hardened material layer (p1) for grinding.
  • the hardened material layer for grinding (p1) is preferably peeled off from the laminate 30 of the protective film (r) and the chip. That is, the step (SP) is performed.
  • the adhesive sheet 40 the same one as described with reference to FIG. 10 can be used.
  • Step (SP) In the optionally employed step (SP) described above, the hardened material layer for grinding (p1) is peeled off from the plurality of singulated chips.
  • step (SP) is included after step (S4).
  • the step (SP) is preferably included after the step (S5).
  • step (SP) is more preferably included after step (S6).
  • step (S6) the chips and the protective film (r) are more strongly bonded, so that the hardened material layer for grinding (p1) is peeled off from the surfaces of the plurality of individualized chips. easier to do.
  • the second curable resin layer (X2) and the protective film (r) itself are prevented from being damaged, and the second curable resin layer (X2) may have adhesiveness, so the second curable resin layer ( X2) or the surface of the second curable resin layer (X2) or the protective film (r) attached to the plurality of chips from the viewpoint of improving the handleability of the laminate of the protective film (r) and the chip A support is preferably provided on the opposite face.
  • the support is preferably an adhesive sheet.
  • the adhesive sheet is attached to the surface of the second curable resin layer (X2) or the protective film (r) opposite to the surface attached to the plurality of chips.
  • the adhesive sheet 40 shown in FIGS. 10 and 11 and the adhesive sheet is as described above.
  • the cured material layer for grinding (p1) As a method for peeling off the cured material layer for grinding (p1), there is a method in which the cured material layer for grinding (p1) is softened to the extent that it can be peeled off by applying an external stimulus.
  • a cured resin such as the aforementioned TEMPLOC (manufactured by Denka Co., Ltd.) softens the resin after curing to facilitate the peeling process.
  • the peeling treatment may be performed by adding hot water of a certain temperature or higher or by immersing in hot water.
  • Another method for peeling off the cured material layer for grinding (p1) is a method of irradiating the cured material layer for grinding (p1) with a laser and peeling it off from a plurality of individualized chips. Further, when the supporting substrate (Y1) is used in the step (S2) and the step (S4) is performed without peeling off the supporting substrate (Y1), the supporting substrate (Y1) and the grinding The cured material layer (p1) may be peeled off at the same time, or after the support substrate (Y1) is peeled off, the cured material layer for grinding (p1) may be peeled off as described above.
  • Step (SC) In the optionally employed step (SC) described above, an easy peeling layer (p2) is formed on the bump forming surface of the wafer before step (S1).
  • the easy peeling layer (p2) is formed in the step (SC)
  • the hardened layer for grinding (p1) formed through the steps (S1) to (S3) is formed on the easy peeling layer (p2). be.
  • FIGS. 12A to 12C show that the easily peelable layer (p2) and the first curable resin are formed on the bump formation surface 11a of the chip fabrication wafer 10-1 obtained through the steps (SC) and (S1).
  • FIG. 4 is a schematic cross-sectional view showing an example of a laminate having a layer (X1) formed thereon; As shown in FIGS. 12A to 12C, the easy peeling layer (p2) is formed directly on the bump forming surface 11a.
  • the easy peeling layer (p2) mainly makes it easy to peel off the hardened material layer for grinding (p1) from the bumps and the bump forming surface in the step (SP) after grinding the back surface of the wafer in the step (S4). established for the purpose.
  • the easy peeling layer (p2) may be formed at least on the bump forming surface, but as shown in FIGS. preferably. Further, when using the chip fabrication wafer 10-1 as the wafer, as shown in FIGS. It is possible to prevent direct contact between the grinding hardened material layer (p1) and the second hardening resin layer (X2) or the protective film (r). As a result, the hardened material layer for grinding (p1) can be peeled off more easily.
  • the easily peelable layer (p2) may be formed by forming a composition for forming an easily peelable layer into a film form and coating the bump forming surface as an easily peelable layer film (p2f).
  • the easily peelable layer-forming composition for forming the easily peelable layer may be formed by a method of supplying the composition using a dispenser or the like. Alternatively, for example, it may be formed by a dip coating method or the like. From the viewpoint of workability, it is preferably applied as an easily peelable layer film (p2f).
  • the easy peeling layer film (p2f) when using the chip fabrication wafer 10-1 as the wafer and using the easy peeling layer film (p2f) as the easy peeling layer (p2), after the step (S5), the step (SP ), the easy peeling layer film (p2f) can be prevented from contacting the second curable resin layer (X2) or the protective film (r) until It is preferable to use
  • the easy peeling layer film (p2f) covers the groove 13 so as not to reach the deep part of the groove 13, the easy peeling layer film (p2f) and the second curative Direct contact with the resin layer (X2) or the protective film (r) can be prevented.
  • the easily peelable layer film (p2f) and the hardened layer for grinding (p1) can be more easily peeled from the kerf portion.
  • the film when covering the bump forming surface as the easily peelable layer film (p2f), the film may be formed while being stretched by heating or the like.
  • the mode of FIG. 12( a ) is also included in the mode in which the easily peelable layer film (p2f) covers the groove 13 so as not to reach the deep portion of the groove 13 .
  • the easy peeling layer (p2) when using the wafer 10-1 for producing chips as the wafer, for example, as shown in FIG. It is preferable to fill the inside of the to form the easy peeling layer (p2).
  • the second curable resin layer (X2) or the protective film (r) is filled rather than the cured material layer (p1) for grinding, or the composition for forming an easy peeling layer that is difficult to adhere to the bump forming surface or side surface of the chip.
  • This can prevent direct contact between the grinding hardened material layer (p1) and the second hardening resin layer (X2) or the protective film (r).
  • the easily peelable layer film (p2f) and the hardened layer for grinding (p1) can be more easily peeled from the kerf portion.
  • the easy peeling layer (p2) reaches the deep part of the groove 13, but the easy peeling layer (p2) is formed so as not to reach the deep part of the groove 13 as in FIG. 12(b). You may
  • the thickness of the easily peelable layer (p2) is not particularly limited, but is preferably 5-200 ⁇ m, more preferably 5-100 ⁇ m, and still more preferably 8-80 ⁇ m.
  • the easily peelable layer (p2) work together with the grinding hardened layer (p1) to reduce the risk of damage to the bumps and wafer during the wafer grinding process in step (S4).
  • the easy peeling layer (p2) is peeled off from the bumps and the bump forming surface at the same time as the hardened material layer for grinding (p1) in the step (SP) or after the step (SP).
  • the easily peelable layer-forming composition is appropriately selected in consideration of the peelability of the grinding hardened layer (p1) and the peelability of the easily peelable layer (p2) from the bump and/or the bump forming surface. can be selected.
  • the easy peeling layer (p2) can be made of, for example, a thermoplastic resin.
  • the type of the thermoplastic resin is not particularly limited as long as it has at least peelability from the bump and/or the bump forming surface. , Ethylene-methacrylic acid copolymer, Ethylene-acrylic acid copolymer, etc.
  • the cured material layer for grinding (p1) and the second curable resin layer (X2) or the protective film (r) are prevented from coming into direct contact. can.
  • the cured material layer for grinding (p1) and the second curable resin layer (X2) or protective film (r ) can be avoided from coming into direct contact with each other.
  • the step (SC) is provided so that the grinding hardened layer (p1) is removed from the bumps and the bump forming surface in the step (SP). Since it becomes easy to separate, it is preferable from the viewpoint of reducing the force applied to the bumps, the wafer, and the like.
  • the step It can also be performed before (S4). In that case, in order to reduce the number of operations for handling the wafer provided with the modified region, it is preferable to perform the step (S3) before the step (S4).
  • FIG. 13 shows a process schematic diagram relating to the second manufacturing method.
  • steps (S11) to (S3) are included in this order, - Step (S11):
  • a first curable resin layer (X1) can be peeled off from the wafer so as to cover the bumps and the bump-forming surface of the wafer having a bump-forming surface with bumps on one surface.
  • step (SD) A step of cutting the second curable resin layer (X2) or the protective film (r) along the intervals between the plurality of chips to divide them into shapes corresponding to each chip.
  • step (SD) is preferably included after step (S6).
  • step (SP) may be included after the step (S14), and the step (SP) is preferably included after the step (S5), It is more preferable to include after the step (S6).
  • step (SC) A step of forming an easily peelable layer (p2) on the bump forming surface. can contain both.
  • a first curable resin layer (X1) is formed so as to cover the bumps and the bump-forming surface of the wafer having a bump-forming surface with bumps on one surface. is formed releasably from the wafer.
  • One aspect of the wafer used in the step (S11) is described as one aspect of the wafer used in the step (S1) in the first manufacturing method, except that it does not have grooves and modified regions in advance.
  • the wafers similar to those described above can be used, and the preferred embodiments are also similar.
  • the aspect and formation method of the first curable resin layer (X1) are also the same as those of the first curable resin layer (X1) in the step (S1) in the first production method and the formation method thereof, The same applies to its preferred aspects.
  • the step (S2) in the second manufacturing method is the same as the step (S2) described in the first manufacturing method, and the planarization method and its preferred mode are also the same.
  • the step (S3) in the second manufacturing method is the same as the step (S3) described in the first manufacturing method, and the method for curing the first curable resin layer (X1) and the cured material layer for grinding ( The same applies to the aspect and formation method of p1), and preferred aspects thereof.
  • the step (W) in the second production method is the same as the step (W) explained in the first production method. In step (W), a modified region is formed inside the wafer in step (S11), and the wafer becomes a chip fabrication wafer 10-2.
  • the step (S14) in the second manufacturing method is the step (S4) described in the first manufacturing method, except that the wafer to be ground is limited to a wafer having a modified region formed inside the wafer. The same applies to the method of grinding the wafer, the method of singulating into a plurality of chips, and preferred aspects thereof.
  • the step (S5) in the second manufacturing method is the same as the step (S5) described in the first manufacturing method. The same applies to preferred aspects, and the same applies to the aspects of the second curable resin layer (X2), methods for forming the same, and preferred aspects thereof.
  • the step (S6) in the second manufacturing method is the same as the step (S6) described in the first manufacturing method. The same applies to aspects and forming methods, and preferred aspects thereof.
  • the step (SD) in the second manufacturing method is the same as the step (SD) described in the first manufacturing method, and the second curable resin layer (X2) or the protective film (r) is formed in the plurality of The same applies to the method of cutting along the chip interval and dividing into shapes corresponding to each chip and its preferred mode.
  • the optional step (SP) in the second manufacturing method is the same as the step (SP) described in the first manufacturing method, and the hardened material layer for grinding (p1) is singulated into a plurality of The same applies to the method of peeling from the chip and its preferred mode.
  • the optional step (SC) in the second manufacturing method is the same as the step (SC) described in the first manufacturing method, and the embodiment of the easy peeling layer (p2), the method for forming the same, and their A preferred embodiment is also the same. Further, by using the chip fabrication wafer 10-2 as the wafer, it is possible to prevent direct contact between the grinding hardened material layer (p1) and the second hardening resin layer (X2) or the protective film (r). The effect described in the first manufacturing method can be similarly obtained in the second manufacturing method.

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PCT/JP2022/008127 2021-03-08 2022-02-28 半導体装置の製造方法 WO2022190916A1 (ja)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099622A (ja) * 2010-11-02 2012-05-24 Panasonic Corp 半導体装置の製造方法および製造装置
WO2016189986A1 (ja) * 2015-05-25 2016-12-01 リンテック株式会社 半導体装置の製造方法
WO2018135492A1 (ja) * 2017-01-23 2018-07-26 東京エレクトロン株式会社 半導体基板の処理方法及び半導体基板の処理装置
JP2018190937A (ja) * 2017-05-11 2018-11-29 株式会社ディスコ ウェーハの加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099622A (ja) * 2010-11-02 2012-05-24 Panasonic Corp 半導体装置の製造方法および製造装置
WO2016189986A1 (ja) * 2015-05-25 2016-12-01 リンテック株式会社 半導体装置の製造方法
WO2018135492A1 (ja) * 2017-01-23 2018-07-26 東京エレクトロン株式会社 半導体基板の処理方法及び半導体基板の処理装置
JP2018190937A (ja) * 2017-05-11 2018-11-29 株式会社ディスコ ウェーハの加工方法

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