JPWO2022190916A1 - - Google Patents
Info
- Publication number
- JPWO2022190916A1 JPWO2022190916A1 JP2023505294A JP2023505294A JPWO2022190916A1 JP WO2022190916 A1 JPWO2022190916 A1 JP WO2022190916A1 JP 2023505294 A JP2023505294 A JP 2023505294A JP 2023505294 A JP2023505294 A JP 2023505294A JP WO2022190916 A1 JPWO2022190916 A1 JP WO2022190916A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021036543 | 2021-03-08 | ||
| PCT/JP2022/008127 WO2022190916A1 (ja) | 2021-03-08 | 2022-02-28 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022190916A1 true JPWO2022190916A1 (zh) | 2022-09-15 |
Family
ID=83226590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023505294A Pending JPWO2022190916A1 (zh) | 2021-03-08 | 2022-02-28 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2022190916A1 (zh) |
| CN (1) | CN116918037A (zh) |
| TW (1) | TW202242975A (zh) |
| WO (1) | WO2022190916A1 (zh) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012099622A (ja) * | 2010-11-02 | 2012-05-24 | Panasonic Corp | 半導体装置の製造方法および製造装置 |
| CN107615453B (zh) * | 2015-05-25 | 2020-09-01 | 琳得科株式会社 | 半导体装置的制造方法 |
| KR102426328B1 (ko) * | 2017-01-23 | 2022-07-28 | 도쿄엘렉트론가부시키가이샤 | 반도체 기판의 처리 방법 및 반도체 기판의 처리 장치 |
| JP6925714B2 (ja) * | 2017-05-11 | 2021-08-25 | 株式会社ディスコ | ウェーハの加工方法 |
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2022
- 2022-02-28 CN CN202280018923.2A patent/CN116918037A/zh active Pending
- 2022-02-28 WO PCT/JP2022/008127 patent/WO2022190916A1/ja active Application Filing
- 2022-02-28 JP JP2023505294A patent/JPWO2022190916A1/ja active Pending
- 2022-03-04 TW TW111107873A patent/TW202242975A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022190916A1 (ja) | 2022-09-15 |
| TW202242975A (zh) | 2022-11-01 |
| CN116918037A (zh) | 2023-10-20 |