WO2022179370A1 - Dispositif électroluminescent, ensemble d'affichage et procédé de fabrication de dispositif électroluminescent - Google Patents

Dispositif électroluminescent, ensemble d'affichage et procédé de fabrication de dispositif électroluminescent Download PDF

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Publication number
WO2022179370A1
WO2022179370A1 PCT/CN2022/073559 CN2022073559W WO2022179370A1 WO 2022179370 A1 WO2022179370 A1 WO 2022179370A1 CN 2022073559 W CN2022073559 W CN 2022073559W WO 2022179370 A1 WO2022179370 A1 WO 2022179370A1
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Prior art keywords
light
emitting unit
color
emitting device
substrate
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PCT/CN2022/073559
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English (en)
Chinese (zh)
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谢华飞
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维沃移动通信有限公司
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Publication of WO2022179370A1 publication Critical patent/WO2022179370A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Definitions

  • the present application belongs to the technical field of light-emitting diode (Light-Emitting Diode, LED) packaging, and in particular relates to a light-emitting device, a display assembly and a method for manufacturing the light-emitting device.
  • LED Light-Emitting Diode
  • Micro LED Micro Light-Emitting Diode, also known as ⁇ LED, that is, micro light-emitting diode
  • ⁇ LED Micro Light-Emitting Diode
  • LED miniaturization and matrix technology that is, LED miniaturization and matrix technology. It refers to a high-density and tiny-sized LED array integrated on a driving substrate. Each pixel of the LED display can be addressed and driven individually. It can be regarded as a miniature version of the outdoor LED display. down to the micron level.
  • the influence of the sidewall effect becomes prominent. Due to the existence of the sidewall effect, the size of the existing Micro LED cannot be further reduced. The resulting display has a lower resolution and cannot achieve ultra-high resolution display.
  • the purpose of the embodiments of the present application is to provide a light-emitting device, a display assembly, and a method for manufacturing the light-emitting device, so as to realize ultra-high-resolution display.
  • an embodiment of the present application provides a light-emitting device, comprising: a substrate, a reflection layer, a light-emitting unit, and a color resistance, the substrate and the reflection layer are stacked and arranged; the light-emitting unit is arranged on the reflection layer, and the color resistance is located between the light-emitting unit and the substrate wherein, at least part of the light emitted by the light emitting unit is reflected to the color resist through the reflective layer, so that the color resist outputs light of a single color and then emits through the substrate.
  • an embodiment of the present application provides a display assembly, including: a plurality of light emitting devices according to any one of the first aspects.
  • embodiments of the present application provide a method for manufacturing a light-emitting device, including: forming a driving circuit layer on a substrate and a metal conductive electrode connected to a semiconductor layer in the driving circuit layer; A color resist is formed between; the light emitting unit is mounted on the color resist; a reflective layer is formed on the light emitting unit.
  • a light-emitting device in the embodiment of the present application, includes a substrate, a light-emitting unit, a reflective layer, and a color resist, wherein the light-emitting unit is disposed on the reflective layer, so that when the light-emitting unit operates to emit light, it emits light. The light is reflected by the reflective layer. Since the substrate and the reflective layer are stacked, the single light passing through the color resist is transmitted to the substrate and emitted through the substrate for display.
  • ultra-high-resolution display can be achieved by controlling the size of the color resistance, which overcomes the influence of sidewall effects on ultra-high-resolution display after the size of Micro LEDs in the related art is reduced.
  • Figure 1 shows a schematic cross-sectional view of an existing Micro LED display screen
  • Fig. 2 shows the film layer structure diagram of the Micro LED display screen in the embodiment of the present application
  • FIG. 3 shows a schematic cross-sectional view of the Micro LED display screen in the embodiment of the present application
  • FIG. 4 shows a schematic cross-sectional view of the Micro LED display screen in the embodiment of the present application
  • FIG. 5 shows a schematic diagram of the luminescent color conversion structure of an ultraviolet (Ultraviolet, UV)/blue light LED plus quantum dot (Quantum Dot, QD);
  • FIG. 6 shows a schematic flowchart of a method for manufacturing a light emitting device according to an embodiment of the present application.
  • Micro LED In the related technical solutions, the advantages of Micro LED are obvious. It inherits the characteristics of high efficiency, high brightness, high reliability and fast response time of inorganic LEDs, and has the characteristics of self-illumination without backlight, which is more energy-saving and structural. Simple, small, thin, and more controllable. In addition, another major feature of Micro LED is its ultra-high resolution. Because it is super small, the resolution of the performance is particularly high. This makes LEDs have a wider range of applications, and thus give birth to higher-tech products.
  • Figure 1 shows a schematic cross-sectional view of an existing Micro LED display screen (R, G, and B represent ⁇ LEDs emitting red, green, and blue light, respectively).
  • the conventional Micro LED display is to prepare TFT (Thin Film Transistor, thin film field effect transistor) drive switches and metal traces on the substrate 1 through the array (backplane array) process, and at the same time prepare the spacer through the photolithography process.
  • TFT Thi Film Transistor, thin film field effect transistor
  • the column prevents cross-color between sub-pixels, and then the Micro LED ( ⁇ LED, micro light-emitting diode) is transferred to the corresponding TFT position through the transfer process for binding and bonding.
  • the substrate 1 provides support for the display screen; the TFT provides the driving and switching function for the display screen; the metal traces provide the conductive function for the display screen; the eutectic connection 12 is the connecting agent between the ⁇ LED and the TFT driving backplane; It is a light-emitting sub-pixel, and R/G/B is an example of different color emission; the isolation column is a black matrix prepared to prevent cross-color between sub-pixels.
  • a light-emitting device which includes: a substrate 1 , a light-emitting unit 13 , a reflective layer 15 and a color resist 14 , wherein the light-emitting unit 13 is arranged on a reflective surface layer 15, so that when the light-emitting unit 13 operates to emit light, the emitted light is reflected by the reflective layer 15. Since the substrate 1 and the reflective layer 15 are laminated, the single light passing through the color resist 14 is transmitted to the substrate 1 and passes through the substrate 1. issue.
  • a light-emitting device in this embodiment, includes a substrate 1 , a light-emitting unit 13 , a reflective layer 15 and a color resist 14 , wherein the light-emitting unit 13 is disposed on the reflective layer 15 so that the light-emitting unit 13 When operating to emit light, the emitted light is reflected by the reflective layer 15. Since the substrate 1 and the reflective layer 15 are stacked, the single light passing through the color resist 14 is transmitted to the substrate 1 and emitted through the substrate 1 for display.
  • an ultra-high-resolution display can be realized by controlling the size of the color resistor 14, which overcomes the influence of the sidewall effect on the ultra-high-resolution display after the size of the Micro LED is reduced in the related art.
  • the provision of the reflective layer 15 also protects the light-emitting unit 13, so that the light-emitting device can be isolated from water and oxygen, and be prevented from being scratched.
  • the light-emitting unit 13 is a micro light-emitting diode, which includes an electrode-anode-light-emitting layer-negative electrode-electrode, and its structure is shown in FIG. be limited.
  • the light-emitting device further includes: a driving circuit layer 16, the driving circuit layer 16 is located on the substrate 1; a metal conductive electrode 10, the metal conductive electrode 10 is located on the driving circuit layer 16, the metal conductive electrode 10 and the driving circuit layer
  • the semiconductor layer 4 in 16 and the power supply terminal of the light-emitting unit 13 are connected to supply power to the light-emitting unit 13 .
  • pixel electrodes such as transparent electrodes or high work function electrodes are used in the Micro LED to realize the conduction of the light emitting unit 13, wherein the pixel electrodes such as transparent electrodes or high work function electrodes can be tin-indium oxide, indium tin oxide, etc. , and the above-mentioned transparent electrodes or high work function electrodes have the characteristics of high cost.
  • the conduction of the light emitting unit 13 can be achieved, but the metal conductive electrode 10 can be used to achieve conduction. Therefore, the manufacturing cost of the light emitting device can be reduced.
  • the metal conductive electrode 10 may be any metal conductive electrode 10, such as any one of copper, iron and gold.
  • the provided driving circuit layer 16 can control the power supply to the light-emitting unit 13 so as to control the output light of the light-emitting unit 13 .
  • a gap 17 is provided between the color resist 14 and the light emitting unit 13 .
  • the color resistance 14 and the light emitting unit 13 are not in direct contact, there is a gap 17 . Therefore, the heat generated by the light emitting unit 13 does not directly act on the color resistor 14, therefore, the heat generated by the light emitting unit 13 or the influence of heat dissipation on the color resistor 14 can be reduced, and the thermal stability of the color resistor 14 can be improved. At the same time, the service life of the color resist 14 is prolonged.
  • a recess is provided between two adjacent metal conductive electrodes 10, and the color resist 14 is located in the recess.
  • the color resist 14 is located in the recess between two adjacent metal conductive electrodes 10 , so that the thickness of the reflective layer 15 can be reduced, and therefore, the size of the light emitting device can be reduced.
  • the driving circuit layer 16 includes: a TFT driving circuit.
  • the TFT driving circuit acts as a driving switch for driving the output light of the light-emitting unit 13 .
  • the TFT driving circuit includes a light shielding layer 2 on the substrate 1, an insulating layer 3 on the light shielding layer 2, a semiconductor layer 4 formed on the insulating layer 3, and a dielectric layer 5 formed on the semiconductor layer 4, wherein, A gate 6 and a protective layer 7 formed on the gate 6 are formed on the dielectric layer 5.
  • the protective layer 7 is in contact with the semiconductor layer 4 and wraps the dielectric layer 5 and the gate 6.
  • the source and drain electrodes 8 are formed thereon, wherein the source and drain electrodes 8 are in contact with the semiconductor layer 4 and the light shielding layer 2 , and a passivation layer 9 is formed on the protective layer 7 and the source and drain electrodes 8 .
  • the metal conductive electrode 10 formed on the passivation layer 9 is in contact with the semiconductor layer 4 .
  • the color resist 14 includes: a photoluminescent dye film or a pigment material film.
  • the photoluminescent dye film is a dye film with photoluminescence, wherein the photoluminescence refers to the fact that an object relies on an external light source to be irradiated to obtain energy, and the phenomenon that excitation leads to luminescence occurs.
  • Light-emitting dye film to achieve color output.
  • the pigment material film that is, the film structure using the pigment, outputs the color corresponding to the preset color under the irradiation of light, so as to realize the color display.
  • the spacer structure 11 is further included.
  • the spacer structure 11 is disposed on the reflective layer 15 and is located between two adjacent light-emitting units 13 .
  • the spacer structure 11 is provided so that the light emitted by a single light-emitting unit 13 will not escape under the action of the reflective layer 15 .
  • light escape can be understood as reflecting light to the color resistances 14 of adjacent light-emitting devices, so that when the light-emitting unit 13 in one light-emitting device emits light, the color-resistors 14 in the surrounding light-emitting devices also simultaneously Emergence of light.
  • the spacer structure 11 by arranging the spacer structure 11, the mutual influence between two adjacent light-emitting devices is reduced, which facilitates the realization of ultra-high-resolution display.
  • the substrate 1 includes a light-transmitting substrate 1 .
  • a display assembly is proposed, wherein the display assembly includes the light emitting device of the first aspect.
  • the display assembly proposed in the present application includes the light-emitting device according to the first aspect, and specifically includes: a substrate 1, a light-emitting unit 13, a reflective layer 15, and a color resist 14, wherein the light-emitting unit 13 is disposed on the reflective layer 15 so as to emit light when When the unit 13 operates to emit light, the emitted light is reflected by the reflective layer 15 . Since the substrate 1 and the reflective layer 15 are stacked, the single light passing through the color resist 14 is transmitted to the substrate 1 and emitted through the substrate 1 .
  • a display assembly which includes a light-emitting device including a substrate 1, a light-emitting unit 13, a reflective layer 15 and a color resist 14, wherein the light-emitting unit 13 is disposed on the reflective layer 15, so that the light-emitting unit 13 is placed on the reflective layer 15. 13
  • the emitted light is reflected by the reflective layer 15. Since the substrate 1 and the reflective layer 15 are stacked, the single light passing through the color resist 14 is transmitted to the substrate 1 and emitted through the substrate 1 for display.
  • an ultra-high-resolution display can be realized by controlling the size of the color resist 14, which overcomes the influence of the sidewall effect on the ultra-high-resolution display after the size of the Micro LED is reduced in the related art.
  • the provision of the reflective layer 15 also protects the light-emitting unit 13, so that the light-emitting device can be isolated from water and oxygen, and be prevented from being scratched.
  • any two light-emitting devices share one substrate 1 .
  • any two light-emitting devices share one substrate 1, so that when etching is performed to obtain recesses, all light-emitting devices can be etched, so as to improve the manufacturing efficiency and reduce the size of the display assembly .
  • the color resists in the light emitting device include red color resists, green color resists and blue color resists; wherein, the light emitting unit 13 is a blue light emitting unit 13 .
  • the color resists in the light emitting device include red color resists, green color resists, and colorless color resists; wherein, the light emitting unit 13 is a blue light emitting unit 13 .
  • the color display of the display assembly is realized by defining three colors of the color resistance.
  • color display in the preparation of the light emitting device, color display can be realized by performing one bulk transfer, and three bulk transfers are not required, thus reducing the manufacturing cost of the light emitting device.
  • a method for manufacturing a light-emitting device including:
  • Step 602 forming a driving circuit layer and a metal conductive electrode connected to the semiconductor layer in the driving circuit layer on the substrate;
  • Step 604 forming a color resistance between two adjacent metal conductive electrodes
  • Step 606 installing the light-emitting unit on the color resist
  • Step 608 forming a reflective layer on the light-emitting unit.
  • the embodiment of the present application proposes a method for manufacturing a light-emitting device, by forming a color resist 14 between two adjacent metal conductive electrodes 10, and after installing a light-emitting unit 13 on the color resist 14, a reflection is formed on the light-emitting unit 13 Layer 15, due to the formation of the reflective layer 15 and the color resist 14, so that the light emitted by the light emitting unit 13 is reflected by the reflective layer 15 through the color resist 14 to output a single color of light when it receives the light, and passes through the substrate 1 issue.
  • the method used by the light-emitting device to realize the color display is changed, so that the ultra-high-resolution display can be realized by controlling the size of the color resistance 14, which overcomes the problem of the Micro LED in the related art.
  • the provision of the reflective layer 15 also protects the light-emitting unit 13, so that the light-emitting device can be isolated from water and oxygen, and be prevented from being scratched.
  • a photolithography process is used to etch between two adjacent metal conductive electrodes 10 to obtain the color resist 14 .
  • the color resist 14 is located in the recess between two adjacent metal conductive electrodes 10, so that the thickness of the reflective layer can be reduced, and therefore, the size of the light emitting device can be reduced.
  • the color resist 14 includes: a photoluminescent dye film or a pigment material film.
  • the photoluminescent dye film is a dye film with photoluminescence, wherein the photoluminescence refers to the fact that an object relies on an external light source to be irradiated to obtain energy, and the phenomenon that excitation leads to luminescence occurs.
  • Light-emitting dye film to achieve color output.
  • the pigment material film that is, the film structure using the pigment, outputs the color corresponding to the preset color under the irradiation of light, so as to realize the color display.
  • the method before the step of forming the reflective layer 15 on the light-emitting units 13 , the method further includes: forming a spacer structure 11 on the substrate 1 and between two adjacent light-emitting units 13 .
  • the spacer structure 11 is provided so that the light emitted by a single light-emitting unit 13 will not escape under the action of the reflective layer 15 .
  • light escape can be understood as reflecting light to the color resistances 14 of adjacent light-emitting devices, so that when the light-emitting unit 13 in one light-emitting device emits light, the color-resistors 14 in the surrounding light-emitting devices also simultaneously Emergence of light.
  • the spacer structure 11 by arranging the spacer structure 11, the mutual influence between two adjacent light-emitting devices is reduced, which facilitates the realization of ultra-high-resolution display.
  • the driving circuit layer 16 includes: a thin film transistor (Thin Film Transistor, TFT) driving circuit.
  • TFT Thin Film Transistor
  • the TFT driving circuit includes a light shielding layer 2 on the substrate 1, an insulating layer 3 on the light shielding layer 2, a semiconductor layer 4 formed on the insulating layer 3, and a dielectric layer 5 formed on the semiconductor layer 4, wherein, A gate 6 and a protective layer 7 formed on the gate 6 are formed on the dielectric layer 5.
  • the protective layer 7 is in contact with the semiconductor layer 4 and wraps the dielectric layer 5 and the gate 6.
  • the source and drain electrodes 8 are formed thereon, wherein the source and drain electrodes 8 are in contact with the semiconductor layer 4 and the light shielding layer 2 , and a passivation layer 9 is formed on the protective layer 7 and the source and drain electrodes 8 .
  • the metal conductive electrode 10 formed on the passivation layer 9 is in contact with the semiconductor layer 4 .
  • a TFT driving circuit is prepared on the substrate 1 and connected to the metal conductive electrodes 10.
  • the metal conductive electrodes 10 are patterned by a photolithography process to prepare a color resist 14, and the two ends of the color resist 14 are connected to ⁇ LEDs , since the electrodes at both ends of the ⁇ LED need to be connected separately, that is, there will be a gap on the color resistance 14 to isolate the ⁇ LED from the color resistance 14, thereby realizing the non-contact between the color resistance 14 and the ⁇ LED, which can effectively improve the thermal resistance to the color resistance 14.
  • adding a reflective layer 15 on the top makes the light emitted upward from the ⁇ LED penetrate the ⁇ LED and reflect back to the color resist 14, and penetrates out from the substrate 1, thereby realizing bottom emission.
  • the substrate 1 provides support for the display screen; the TFT provides the driving switch function for the display screen; the metal conductive electrode 10 provides the conductive function for the display component; the eutectic connection 12 is the connecting agent between the ⁇ LED and the TFT driving backplane; ⁇ LED is the light emitting diode , is a light-emitting sub-pixel; the shape of the isolation structure can be a column, a black matrix prepared to prevent cross-color between sub-pixels; the reflective layer 15 is a film layer with light reflection function, which reflects the light emitted by the ⁇ LED upward to the downward direction. At the same time, it provides protection such as isolation of water and oxygen and scratch resistance for the entire display.
  • a color resist 14 is added between the ⁇ LED and the driven substrate 1, and a reflective layer 15 is added on the display screen.
  • the ⁇ LED emits light upward, it is reflected by the reflective layer 15 and passes through the color resist 14 to realize colorization , and penetrates the substrate 1 to emit light from the bottom of the display panel to realize bottom emission.
  • the structure of the embodiment of the present application is different from that of the traditional color conversion scheme.
  • the color resist 14 of this proposal is placed on the substrate 1 and is not in direct contact with the ⁇ LED.
  • the size control of the color resistance 14 can be achieved through the micron-level or even nano-scale semiconductor lithography process, so that it does not depend on the size of the ⁇ LED. Resolution display.
  • the Micro-LED colorization implementation methods mainly include RGB three-color ⁇ LED method (take FIG. 1 as an example), blue LED plus luminescent medium method (take FIG. 4 as an example), and optical lens synthesis method.
  • the RGB three-color ⁇ LED method requires three times of ⁇ LED mass transfer to achieve colorized display. Under the condition of low yield and complex process of the existing mass transfer technology, it brings huge problems to subsequent repairs, and it is difficult to carry out batch processing. production.
  • the optical lens synthesis method encapsulates three red, green, and blue micro-LED arrays on three packaging boards respectively, and connects a control board and a three-color prism. The brightness of the three-color micro-LED array is used to achieve colorization.
  • This method uses a prism to realize the light path conversion.
  • the structure is complex and the display device is bulky, which is not suitable for mobile terminals.
  • the manufacturing method of the light-emitting device proposed in the embodiment of the present application does not require three massive transfers, thus reducing the difficulty of mass production.
  • FIG. 5 shows a schematic diagram of the existing UV/blue LED plus quantum dot (QD) emission color conversion structure.
  • the medium is phosphors or quantum dots. Since the phosphor coating will absorb part of the energy, the conversion rate will be reduced, and the size of the phosphor particles is large, about 1-10 microns. As the size of the micro-LED pixel continues to decrease, The phosphor coating becomes more and more uneven and affects the display quality; while the quantum dot material is not stable and requires high heat dissipation. In the existing technology, quantum dots are coated on the Micro LED.
  • the ⁇ LED Since the ⁇ LED emits a lot of heat, it will It greatly affects the short lifespan of the quantum dots, which greatly limits its application range. Since there is a gap between the color resistance 14 and the light-emitting unit 13 in this application, the existence of the gap reduces the effect of the light-emitting unit 13 on the color resistance 14. Influence, improve the life of the light-emitting device.
  • the embodiments of the present application can be embodied in the form of software products that are essentially or contribute to the prior art, and the computer software products are stored in a storage medium (such as ROM/RAM, magnetic disk, CD-ROM), including several instructions to enable a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to execute the methods of the various embodiments of the present application.
  • a storage medium such as ROM/RAM, magnetic disk, CD-ROM
  • a terminal which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.

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Abstract

La présente demande appartient au domaine technique de l'encapsulation de DEL. Sont divulgués un dispositif électroluminescent, un ensemble d'affichage et un procédé de fabrication d'un dispositif électroluminescent. Le dispositif électroluminescent comprend : un substrat, une couche réfléchissante, une unité électroluminescente et une résistance de couleur, le substrat et la couche réfléchissante étant agencés de manière empilée ; l'unité électroluminescente est disposée sur la couche réfléchissante et la résistance de couleur est située entre l'unité électroluminescente et le substrat ; et au moins une partie de la lumière émise par l'unité électroluminescente est réfléchie vers la résistance de couleur au moyen de la couche réfléchissante, de telle sorte que la résistance de couleur délivre une lumière monochromatique et la lumière monochromatique est ensuite émise au moyen du substrat.
PCT/CN2022/073559 2021-02-26 2022-01-24 Dispositif électroluminescent, ensemble d'affichage et procédé de fabrication de dispositif électroluminescent WO2022179370A1 (fr)

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CN112786764B (zh) * 2021-02-26 2022-02-22 维沃移动通信有限公司 发光器件、显示组件和发光器件的制造方法
CN113903729A (zh) * 2021-09-29 2022-01-07 北海惠科光电技术有限公司 Micro LED显示装置及其制造方法
CN114188466B (zh) * 2021-12-03 2023-11-28 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
CN114497324B (zh) * 2021-12-30 2023-01-24 北海惠科光电技术有限公司 阵列基板及其制备方法、显示面板
CN116487508B (zh) * 2023-06-21 2024-02-06 季华实验室 基于量子点的Micro LED结构及其制备方法

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