WO2022179370A1

WO2022179370A1 - Light-emitting device, display assembly and method for manufacturing light-emitting device

Info

Publication number: WO2022179370A1
Application number: PCT/CN2022/073559
Authority: WO
Inventors: 谢华飞
Original assignee: 维沃移动通信有限公司
Priority date: 2021-02-26
Filing date: 2022-01-24
Publication date: 2022-09-01
Also published as: CN112786764A; CN112786764B

Abstract

The present application belongs to the technical field of LED encapsulation. Disclosed are a light-emitting device, a display assembly, and a method for manufacturing a light-emitting device. The light-emitting device comprises: a substrate, a reflecting layer, a light-emitting unit and a color resistor, wherein the substrate and the reflecting layer are arranged in a stacked manner; the light-emitting unit is arranged on the reflecting layer, and the color resistor is located between the light-emitting unit and the substrate; and at least some light emitted by the light-emitting unit is reflected to the color resistor by means of the reflecting layer, such that the color resistor outputs monochromatic light, and the monochromatic light is then emitted by means of the substrate.

Description

Light-emitting device, display assembly, and manufacturing method of light-emitting device

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to Chinese Patent Application No. 202110217469.0 filed in China on February 26, 2021, the entire contents of which are incorporated herein by reference.

technical field

The present application belongs to the technical field of light-emitting diode (Light-Emitting Diode, LED) packaging, and in particular relates to a light-emitting device, a display assembly and a method for manufacturing the light-emitting device.

Background technique

Micro LED (Micro Light-Emitting Diode, also known as μLED, that is, micro light-emitting diode) technology, that is, LED miniaturization and matrix technology. It refers to a high-density and tiny-sized LED array integrated on a driving substrate. Each pixel of the LED display can be addressed and driven individually. It can be regarded as a miniature version of the outdoor LED display. down to the micron level.

As the distance between two adjacent Micro LED pixels decreases, the influence of the sidewall effect becomes prominent. Due to the existence of the sidewall effect, the size of the existing Micro LED cannot be further reduced. The resulting display has a lower resolution and cannot achieve ultra-high resolution display.

SUMMARY OF THE INVENTION

The purpose of the embodiments of the present application is to provide a light-emitting device, a display assembly, and a method for manufacturing the light-emitting device, so as to realize ultra-high-resolution display.

In order to solve the above technical problems, this application is implemented as follows:

In a first aspect, an embodiment of the present application provides a light-emitting device, comprising: a substrate, a reflection layer, a light-emitting unit, and a color resistance, the substrate and the reflection layer are stacked and arranged; the light-emitting unit is arranged on the reflection layer, and the color resistance is located between the light-emitting unit and the substrate wherein, at least part of the light emitted by the light emitting unit is reflected to the color resist through the reflective layer, so that the color resist outputs light of a single color and then emits through the substrate.

In a second aspect, an embodiment of the present application provides a display assembly, including: a plurality of light emitting devices according to any one of the first aspects.

In a third aspect, embodiments of the present application provide a method for manufacturing a light-emitting device, including: forming a driving circuit layer on a substrate and a metal conductive electrode connected to a semiconductor layer in the driving circuit layer; A color resist is formed between; the light emitting unit is mounted on the color resist; a reflective layer is formed on the light emitting unit.

In the embodiment of the present application, a light-emitting device is proposed. The proposed light-emitting device includes a substrate, a light-emitting unit, a reflective layer, and a color resist, wherein the light-emitting unit is disposed on the reflective layer, so that when the light-emitting unit operates to emit light, it emits light. The light is reflected by the reflective layer. Since the substrate and the reflective layer are stacked, the single light passing through the color resist is transmitted to the substrate and emitted through the substrate for display. In this design, ultra-high-resolution display can be achieved by controlling the size of the color resistance, which overcomes the influence of sidewall effects on ultra-high-resolution display after the size of Micro LEDs in the related art is reduced.

Description of drawings

Figure 1 shows a schematic cross-sectional view of an existing Micro LED display screen;

Fig. 2 shows the film layer structure diagram of the Micro LED display screen in the embodiment of the present application;

FIG. 3 shows a schematic cross-sectional view of the Micro LED display screen in the embodiment of the present application;

FIG. 4 shows a schematic cross-sectional view of the Micro LED display screen in the embodiment of the present application;

FIG. 5 shows a schematic diagram of the luminescent color conversion structure of an ultraviolet (Ultraviolet, UV)/blue light LED plus quantum dot (Quantum Dot, QD);

FIG. 6 shows a schematic flowchart of a method for manufacturing a light emitting device according to an embodiment of the present application.

The correspondence between the reference numerals and component names in Figures 1 to 5 is:

1 substrate, 2 light shielding layer, 3 insulating layer, 4 semiconductor layer, 5 dielectric layer, 6 gate, 7 protective layer, 8 source and drain, 9 passivation layer, 10 metal conductive electrode, 11 spacer structure, 12 eutectic Connections, 13 light-emitting units, 14 color resists, 15 reflective layers, 16 driver circuit layers, 17 gaps.

Detailed ways

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

The terms "first", "second" and the like in the description and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It is to be understood that data so used may be interchanged under appropriate circumstances so that embodiments of the application can be practiced in sequences other than those illustrated or described herein. In addition, "and/or" in the description and claims indicates at least one of the connected objects, and the character "/" generally indicates that the associated objects are in an "or" relationship.

The light-emitting device, the display assembly, and the manufacturing method of the light-emitting device provided in the embodiments of the present application will be described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios thereof.

In the related technical solutions, the advantages of Micro LED are obvious. It inherits the characteristics of high efficiency, high brightness, high reliability and fast response time of inorganic LEDs, and has the characteristics of self-illumination without backlight, which is more energy-saving and structural. Simple, small, thin, and more controllable. In addition, another major feature of Micro LED is its ultra-high resolution. Because it is super small, the resolution of the performance is particularly high. This makes LEDs have a wider range of applications, and thus give birth to higher-tech products.

Figure 1 shows a schematic cross-sectional view of an existing Micro LED display screen (R, G, and B represent μLEDs emitting red, green, and blue light, respectively).

As shown in Figure 1, the conventional Micro LED display is to prepare TFT (Thin Film Transistor, thin film field effect transistor) drive switches and metal traces on the substrate 1 through the array (backplane array) process, and at the same time prepare the spacer through the photolithography process. The column prevents cross-color between sub-pixels, and then the Micro LED (μLED, micro light-emitting diode) is transferred to the corresponding TFT position through the transfer process for binding and bonding. Among them, the substrate 1 provides support for the display screen; the TFT provides the driving and switching function for the display screen; the metal traces provide the conductive function for the display screen; the eutectic connection 12 is the connecting agent between the μLED and the TFT driving backplane; It is a light-emitting sub-pixel, and R/G/B is an example of different color emission; the isolation column is a black matrix prepared to prevent cross-color between sub-pixels.

As described above, as the distance between two adjacent Micro LED pixels decreases, the influence of sidewall effect becomes prominent. Due to the existence of sidewall effect, the size of existing Micro LEDs cannot be further reduced. In the technical solution, the resolution of the display screen produced by the application of Micro LED is low, and ultra-high-resolution display cannot be realized.

In an embodiment of the present application, as shown in FIG. 2 and FIG. 3 , a light-emitting device is proposed, which includes: a substrate 1 , a light-emitting unit 13 , a reflective layer 15 and a color resist 14 , wherein the light-emitting unit 13 is arranged on a reflective surface layer 15, so that when the light-emitting unit 13 operates to emit light, the emitted light is reflected by the reflective layer 15. Since the substrate 1 and the reflective layer 15 are laminated, the single light passing through the color resist 14 is transmitted to the substrate 1 and passes through the substrate 1. issue.

In this embodiment, a light-emitting device is proposed. The proposed light-emitting device includes a substrate 1 , a light-emitting unit 13 , a reflective layer 15 and a color resist 14 , wherein the light-emitting unit 13 is disposed on the reflective layer 15 so that the light-emitting unit 13 When operating to emit light, the emitted light is reflected by the reflective layer 15. Since the substrate 1 and the reflective layer 15 are stacked, the single light passing through the color resist 14 is transmitted to the substrate 1 and emitted through the substrate 1 for display. In this design, an ultra-high-resolution display can be realized by controlling the size of the color resistor 14, which overcomes the influence of the sidewall effect on the ultra-high-resolution display after the size of the Micro LED is reduced in the related art.

In addition, the provision of the reflective layer 15 also protects the light-emitting unit 13, so that the light-emitting device can be isolated from water and oxygen, and be prevented from being scratched.

In one of the embodiments, the light-emitting unit 13 is a micro light-emitting diode, which includes an electrode-anode-light-emitting layer-negative electrode-electrode, and its structure is shown in FIG. be limited.

In one embodiment, the light-emitting device further includes: a driving circuit layer 16, the driving circuit layer 16 is located on the substrate 1; a metal conductive electrode 10, the metal conductive electrode 10 is located on the driving circuit layer 16, the metal conductive electrode 10 and the driving circuit layer The semiconductor layer 4 in 16 and the power supply terminal of the light-emitting unit 13 are connected to supply power to the light-emitting unit 13 .

In the related technical solution, pixel electrodes such as transparent electrodes or high work function electrodes are used in the Micro LED to realize the conduction of the light emitting unit 13, wherein the pixel electrodes such as transparent electrodes or high work function electrodes can be tin-indium oxide, indium tin oxide, etc. , and the above-mentioned transparent electrodes or high work function electrodes have the characteristics of high cost.

In the embodiment of the present application, instead of using a pixel electrode such as a transparent electrode or a high work function electrode, the conduction of the light emitting unit 13 can be achieved, but the metal conductive electrode 10 can be used to achieve conduction. Therefore, the manufacturing cost of the light emitting device can be reduced.

The metal conductive electrode 10 may be any metal conductive electrode 10, such as any one of copper, iron and gold.

In addition, the provided driving circuit layer 16 can control the power supply to the light-emitting unit 13 so as to control the output light of the light-emitting unit 13 .

In any of the above embodiments, as shown in FIG. 4 , a gap 17 is provided between the color resist 14 and the light emitting unit 13 .

In this embodiment, since the color resistance 14 and the light emitting unit 13 are not in direct contact, there is a gap 17 . Therefore, the heat generated by the light emitting unit 13 does not directly act on the color resistor 14, therefore, the heat generated by the light emitting unit 13 or the influence of heat dissipation on the color resistor 14 can be reduced, and the thermal stability of the color resistor 14 can be improved. At the same time, the service life of the color resist 14 is prolonged.

In any of the above embodiments, a recess is provided between two adjacent metal conductive electrodes 10, and the color resist 14 is located in the recess.

In this embodiment, the color resist 14 is located in the recess between two adjacent metal conductive electrodes 10 , so that the thickness of the reflective layer 15 can be reduced, and therefore, the size of the light emitting device can be reduced.

In any of the above embodiments, the driving circuit layer 16 includes: a TFT driving circuit.

In this embodiment, the TFT driving circuit acts as a driving switch for driving the output light of the light-emitting unit 13 .

The TFT driving circuit includes a light shielding layer 2 on the substrate 1, an insulating layer 3 on the light shielding layer 2, a semiconductor layer 4 formed on the insulating layer 3, and a dielectric layer 5 formed on the semiconductor layer 4, wherein, A gate 6 and a protective layer 7 formed on the gate 6 are formed on the dielectric layer 5. The protective layer 7 is in contact with the semiconductor layer 4 and wraps the dielectric layer 5 and the gate 6. At the same time, on the protective layer 7 The source and drain electrodes 8 are formed thereon, wherein the source and drain electrodes 8 are in contact with the semiconductor layer 4 and the light shielding layer 2 , and a passivation layer 9 is formed on the protective layer 7 and the source and drain electrodes 8 .

The metal conductive electrode 10 formed on the passivation layer 9 is in contact with the semiconductor layer 4 .

In any of the above embodiments, the color resist 14 includes: a photoluminescent dye film or a pigment material film.

In this embodiment, the photoluminescent dye film is a dye film with photoluminescence, wherein the photoluminescence refers to the fact that an object relies on an external light source to be irradiated to obtain energy, and the phenomenon that excitation leads to luminescence occurs. Light-emitting dye film to achieve color output. In the same way, the pigment material film, that is, the film structure using the pigment, outputs the color corresponding to the preset color under the irradiation of light, so as to realize the color display.

In any of the above embodiments, the spacer structure 11 is further included. The spacer structure 11 is disposed on the reflective layer 15 and is located between two adjacent light-emitting units 13 .

In this embodiment, the spacer structure 11 is provided so that the light emitted by a single light-emitting unit 13 will not escape under the action of the reflective layer 15 . Wherein, light escape can be understood as reflecting light to the color resistances 14 of adjacent light-emitting devices, so that when the light-emitting unit 13 in one light-emitting device emits light, the color-resistors 14 in the surrounding light-emitting devices also simultaneously Emergence of light.

In addition, by arranging the spacer structure 11, the mutual influence between two adjacent light-emitting devices is reduced, which facilitates the realization of ultra-high-resolution display.

In one of the embodiments, the substrate 1 includes a light-transmitting substrate 1 .

In an embodiment of the second aspect of the present application, a display assembly is proposed, wherein the display assembly includes the light emitting device of the first aspect.

The display assembly proposed in the present application includes the light-emitting device according to the first aspect, and specifically includes: a substrate 1, a light-emitting unit 13, a reflective layer 15, and a color resist 14, wherein the light-emitting unit 13 is disposed on the reflective layer 15 so as to emit light when When the unit 13 operates to emit light, the emitted light is reflected by the reflective layer 15 . Since the substrate 1 and the reflective layer 15 are stacked, the single light passing through the color resist 14 is transmitted to the substrate 1 and emitted through the substrate 1 .

In this embodiment, a display assembly is proposed, which includes a light-emitting device including a substrate 1, a light-emitting unit 13, a reflective layer 15 and a color resist 14, wherein the light-emitting unit 13 is disposed on the reflective layer 15, so that the light-emitting unit 13 is placed on the reflective layer 15. 13 When the light is emitted during operation, the emitted light is reflected by the reflective layer 15. Since the substrate 1 and the reflective layer 15 are stacked, the single light passing through the color resist 14 is transmitted to the substrate 1 and emitted through the substrate 1 for display. In this design, an ultra-high-resolution display can be realized by controlling the size of the color resist 14, which overcomes the influence of the sidewall effect on the ultra-high-resolution display after the size of the Micro LED is reduced in the related art.

In one of the embodiments, any two light-emitting devices share one substrate 1 .

In this embodiment, any two light-emitting devices share one substrate 1, so that when etching is performed to obtain recesses, all light-emitting devices can be etched, so as to improve the manufacturing efficiency and reduce the size of the display assembly .

In one embodiment, the color resists in the light emitting device include red color resists, green color resists and blue color resists; wherein, the light emitting unit 13 is a blue light emitting unit 13 .

In one embodiment, the color resists in the light emitting device include red color resists, green color resists, and colorless color resists; wherein, the light emitting unit 13 is a blue light emitting unit 13 .

In this embodiment, the color display of the display assembly is realized by defining three colors of the color resistance.

In the related technical solution, as shown in FIG. 5, taking the existing UV/blue LED plus quantum dot (QD) emission color conversion as an example, in order to realize color display, it is necessary to perform three massive transfers on the light-emitting device, and the number of transfers increases. This will reduce the probability of successful manufacture of the light-emitting device, thereby increasing the manufacturing cost of the light-emitting device.

In this embodiment, in the preparation of the light emitting device, color display can be realized by performing one bulk transfer, and three bulk transfers are not required, thus reducing the manufacturing cost of the light emitting device.

In addition, in the preparation of light-emitting devices, the number of mass transfers is reduced, which reduces the difficulty of mass production.

In an embodiment of the third aspect of the present application, as shown in FIG. 6 , a method for manufacturing a light-emitting device is proposed, including:

Step 602, forming a driving circuit layer and a metal conductive electrode connected to the semiconductor layer in the driving circuit layer on the substrate;

Step 604, forming a color resistance between two adjacent metal conductive electrodes;

Step 606, installing the light-emitting unit on the color resist;

Step 608, forming a reflective layer on the light-emitting unit.

The embodiment of the present application proposes a method for manufacturing a light-emitting device, by forming a color resist 14 between two adjacent metal conductive electrodes 10, and after installing a light-emitting unit 13 on the color resist 14, a reflection is formed on the light-emitting unit 13 Layer 15, due to the formation of the reflective layer 15 and the color resist 14, so that the light emitted by the light emitting unit 13 is reflected by the reflective layer 15 through the color resist 14 to output a single color of light when it receives the light, and passes through the substrate 1 issue. Compared with the prior art solution, in the embodiment of the present application, the method used by the light-emitting device to realize the color display is changed, so that the ultra-high-resolution display can be realized by controlling the size of the color resistance 14, which overcomes the problem of the Micro LED in the related art. The effect of sidewall effects on ultra-high-resolution displays after size reduction.

In one embodiment, a photolithography process is used to etch between two adjacent metal conductive electrodes 10 to obtain the color resist 14 .

In this embodiment, the color resist 14 is located in the recess between two adjacent metal conductive electrodes 10, so that the thickness of the reflective layer can be reduced, and therefore, the size of the light emitting device can be reduced.

In one embodiment, the color resist 14 includes: a photoluminescent dye film or a pigment material film.

In one embodiment, before the step of forming the reflective layer 15 on the light-emitting units 13 , the method further includes: forming a spacer structure 11 on the substrate 1 and between two adjacent light-emitting units 13 .

In one embodiment, the driving circuit layer 16 includes: a thin film transistor (Thin Film Transistor, TFT) driving circuit.

In the embodiment of the present application, a TFT driving circuit is prepared on the substrate 1 and connected to the metal conductive electrodes 10. The metal conductive electrodes 10 are patterned by a photolithography process to prepare a color resist 14, and the two ends of the color resist 14 are connected to μLEDs , since the electrodes at both ends of the μLED need to be connected separately, that is, there will be a gap on the color resistance 14 to isolate the μLED from the color resistance 14, thereby realizing the non-contact between the color resistance 14 and the μLED, which can effectively improve the thermal resistance to the color resistance 14. At the same time, adding a reflective layer 15 on the top makes the light emitted upward from the μLED penetrate the μLED and reflect back to the color resist 14, and penetrates out from the substrate 1, thereby realizing bottom emission.

Among them, the substrate 1 provides support for the display screen; the TFT provides the driving switch function for the display screen; the metal conductive electrode 10 provides the conductive function for the display component; the eutectic connection 12 is the connecting agent between the μLED and the TFT driving backplane; μLED is the light emitting diode , is a light-emitting sub-pixel; the shape of the isolation structure can be a column, a black matrix prepared to prevent cross-color between sub-pixels; the reflective layer 15 is a film layer with light reflection function, which reflects the light emitted by the μLED upward to the downward direction. At the same time, it provides protection such as isolation of water and oxygen and scratch resistance for the entire display.

In the embodiment of the present application, a color resist 14 is added between the μLED and the driven substrate 1, and a reflective layer 15 is added on the display screen. When the μLED emits light upward, it is reflected by the reflective layer 15 and passes through the color resist 14 to realize colorization , and penetrates the substrate 1 to emit light from the bottom of the display panel to realize bottom emission. The structure of the embodiment of the present application is different from that of the traditional color conversion scheme. The color resist 14 of this proposal is placed on the substrate 1 and is not in direct contact with the μLED. , which can effectively isolate the influence of the heat generated by the μLED light emission and the heat dissipation on the color resistance 14, thereby improving the display life; at the same time, the size control of the color resistance 14 can be achieved through the micron-level or even nano-scale semiconductor lithography process, so that it does not depend on the size of the μLED. Resolution display.

In addition, in the related technical solution, the Micro-LED colorization implementation methods mainly include RGB three-color μLED method (take FIG. 1 as an example), blue LED plus luminescent medium method (take FIG. 4 as an example), and optical lens synthesis method.

Among them, the RGB three-color μLED method requires three times of μLED mass transfer to achieve colorized display. Under the condition of low yield and complex process of the existing mass transfer technology, it brings huge problems to subsequent repairs, and it is difficult to carry out batch processing. production. The optical lens synthesis method encapsulates three red, green, and blue micro-LED arrays on three packaging boards respectively, and connects a control board and a three-color prism. The brightness of the three-color micro-LED array is used to achieve colorization. This method uses a prism to realize the light path conversion. The structure is complex and the display device is bulky, which is not suitable for mobile terminals. However, the manufacturing method of the light-emitting device proposed in the embodiment of the present application does not require three massive transfers, thus reducing the difficulty of mass production.

In addition, the blue LED plus luminescent medium method is currently the closest method to mass production. Figure 5 shows a schematic diagram of the existing UV/blue LED plus quantum dot (QD) emission color conversion structure. The medium is phosphors or quantum dots. Since the phosphor coating will absorb part of the energy, the conversion rate will be reduced, and the size of the phosphor particles is large, about 1-10 microns. As the size of the micro-LED pixel continues to decrease, The phosphor coating becomes more and more uneven and affects the display quality; while the quantum dot material is not stable and requires high heat dissipation. In the existing technology, quantum dots are coated on the Micro LED. Since the μLED emits a lot of heat, it will It greatly affects the short lifespan of the quantum dots, which greatly limits its application range. Since there is a gap between the color resistance 14 and the light-emitting unit 13 in this application, the existence of the gap reduces the effect of the light-emitting unit 13 on the color resistance 14. Influence, improve the life of the light-emitting device.

It should be noted that, herein, the terms "comprising", "comprising" or any other variation thereof are intended to encompass non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements, It also includes other elements not expressly listed or inherent to such a process, method, article or apparatus. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in a process, method, article or apparatus that includes the element. Furthermore, it should be noted that the scope of the methods and apparatus in the embodiments of the present application is not limited to performing the functions in the order shown or discussed, but may also include performing the functions in a substantially simultaneous manner or in the reverse order depending on the functions involved. To perform functions, for example, the described methods may be performed in an order different from that described, and various steps may also be added, omitted, or combined. Additionally, features described with reference to some examples may be combined in other examples.

From the description of the above embodiments, those skilled in the art can clearly understand that the method of the above embodiment can be implemented by means of software plus a necessary general hardware platform, and of course can also be implemented by hardware, but in many cases the former is better implementation. Based on this understanding, the embodiments of the present application can be embodied in the form of software products that are essentially or contribute to the prior art, and the computer software products are stored in a storage medium (such as ROM/RAM, magnetic disk, CD-ROM), including several instructions to enable a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to execute the methods of the various embodiments of the present application.

The embodiments of the present application have been described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific embodiments, which are merely illustrative rather than restrictive. Under the inspiration of this application, without departing from the scope of protection of the purpose of this application and the claims, many forms can be made, which all fall within the protection of this application.

Claims

A light-emitting device, comprising: a substrate, a reflective layer, a light-emitting unit and a color resistance;

the substrate and the reflective layer are stacked and arranged;

The light-emitting unit is disposed on the reflective layer, and the color resist is located between the light-emitting unit and the substrate;

Wherein, at least part of the light emitted by the light emitting unit is reflected to the color resist through the reflective layer, so that the color resist outputs a single color of light and then emits light through the substrate.
The light emitting device of claim 1, further comprising:

a driving circuit layer, the driving circuit layer is disposed on the substrate;

a metal conductive electrode, the metal conductive electrode is located on the driving circuit layer, the metal conductive electrode is connected to the semiconductor layer in the driving circuit layer and the power supply terminal of the light-emitting unit, and is used for supplying power to the light-emitting unit ;

A recess is provided between two adjacent metal conductive electrodes, and the color resistor is located in the recess.
The light emitting device according to claim 2, wherein a gap is provided between the color resistor and the light emitting unit.
The light emitting device according to any one of claims 1 to 3, further comprising:

A spacer structure is provided on the reflective layer and is located between two adjacent light-emitting units.
A display assembly comprising:

A plurality of light emitting devices as claimed in any one of claims 1 to 4.
The display assembly of claim 5, wherein any two light emitting devices share one substrate.
The display assembly according to claim 5 or 6, wherein the color resistance in the light emitting device comprises red color resistance, green color resistance and blue color resistance;

Wherein, the light-emitting unit in the light-emitting device is a blue light-emitting unit.
A display assembly according to claim 5 or 6, wherein,

The color resistance in the light-emitting device includes red color resistance, green color resistance and colorless color resistance;

Wherein, the light-emitting unit in the light-emitting device is a blue light-emitting unit.
A method of manufacturing a light-emitting device, comprising:

forming a driving circuit layer and a metal conductive electrode connected with the semiconductor layer in the driving circuit layer on the substrate;

forming a color resistance between two adjacent metal conductive electrodes;

installing the light-emitting unit on the color resist;

A reflective layer is formed on the light emitting unit.
The method for manufacturing a light-emitting device according to claim 9, wherein a photolithography process is used to perform etching between two adjacent metal conductive electrodes to obtain color resistance.