CN107731863A - Light emitting diode indicator - Google Patents
Light emitting diode indicator Download PDFInfo
- Publication number
- CN107731863A CN107731863A CN201711077697.2A CN201711077697A CN107731863A CN 107731863 A CN107731863 A CN 107731863A CN 201711077697 A CN201711077697 A CN 201711077697A CN 107731863 A CN107731863 A CN 107731863A
- Authority
- CN
- China
- Prior art keywords
- micro
- led
- green
- emitting diode
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
The present invention provides a kind of light emitting diode indicator, including first substrate, pixel cell is arranged on the first substrate, and the pixel cell includes red sub-pixel, green sub-pixels and blue subpixels, the green sub-pixels be green glow it is micro-led, the green glow it is micro-led including：Initial green glow is micro-led；Green color blocking coating, the green color blocking coating are covered in the micro-led outer surface of the initial green glow, and the green color blocking coating is with least one opening；And the first contact electrode, it is arranged on the green color blocking coating, and to be electrically connected to the initial green glow micro-led from least one opening for the first contact electrode；Wherein, the green color blocking coating is used for the light for filtering out the micro-led light medium wave a length of 600nm to 650nm sent of the initial green glow；And then improve the display quality of display.
Description
Technical field
The present invention is particularly related to micro-led display on a kind of light emitting diode indicator.
Background technology
With the development of science and technology display is also aobvious from more thick and heavy cathode-ray tube (Cathode Ray Tube, CRT)
Show that device is gradually transformed into more flat and frivolous liquid crystal display (Liquid Crystal Display, LCD), plasma shows
Show device (Plasma Display Panel, PDP), Organic Light Emitting Diode (Organic Light Emitting Diode,
OLED) display or micro-led (Micro LED) display etc..
Full-color light emitting diode indicator can utilize the light emitting diode (Micro LED) of downsizing to form red, green, blue
The sub-pixel of color, without the colored filter in conventional liquid crystal, this structure is more simple, small volume.Also, send out
Optical diode can be produced on bendable substrate so that light emitting diode indicator is not only frivolous also flexible.Therefore, light
The exploitation of diode display has just like turned into one of important trend of existing market with research.
Fig. 1 is the partial cutaway schematic of existing light emitting diode indicator.As shown in figure 1, diode displaying
First substrate 10 that device 100 includes being oppositely arranged, second substrate 19 and it is arranged between first substrate 10 and second substrate 19
Light emitting diode matrix, wherein, first substrate 10 is active component array base board, and it (is painted comprising multiple image element circuits in Fig. 1
Shown three image element circuits, be respectively labeled as T1, T2, T3), insulating barrier 11, pixel defining layer 12, at least a first electrode (Fig. 1
In depict three first electrodes, be respectively labeled as 161,162,163) and an at least second electrode 18.Three marked in Fig. 1
Individual image element circuit T1, T2 and T3 are located in corresponding red sub-pixel, green sub-pixels and blue subpixels respectively, to divide
Not each self-driven feux rouges is micro-led 13, green glow micro-led 14 and blue light micro-led 15.
Image element circuit T1, T2, T3 are, for example, thin film transistor (TFT), feux rouges is micro-led 13, green glow micro-led 14 with
And blue light micro-led 15 is located in multiple perforates of pixel defining layer 12 respectively.
Insulating barrier 150 covers image element circuit T1, T2, T3；And insulating barrier 150 can have to above-mentioned multiple image element circuits it is multiple
Through hole (depicts three through holes, be respectively labeled as TH1, TH2, TH3) in Fig. 1, with expose image element circuit T1, T2 of part with
T3, first electrode 161,162,163 can be electrical by corresponding through hole TH1, TH2, TH3 and corresponding image element circuit T1, T2, T3
Connection.In addition, electrical tack coat 171,172,173, electrical tack coat are each provided with first electrode 161,162,163 respectively
171st, 172,173 is micro-led 13, green first electrode 161,162,163 is each electrically connected into feux rouges respectively
One end of light micro-led 14 and blue light micro-led 15.It is miniature that second electrode 18 is then electrically connected with feux rouges
The other end of light emitting diode 13, green glow micro-led 15 and blue light micro-led 15.Second electrode 18
For example, common electrode.
When driving light emitting diode indicator 100 lights, if driving voltage is relatively low, such as driving voltage is less than 2V, green glow
Micro-led 14 can produce noise in 600nm-650nm wave-length coverage, and then cause the miniature light-emitting diodes of green glow
The light that pipe 14 is sent is partially yellow, causes the picture that whole light emitting diode indicator 100 is shown colour cast occur.
Therefore, in order to overcome micro-led luminous partially yellow of the green glow of existing light emitting diode indicator to ask
Topic, the present invention propose a kind of new light emitting diode indicator.
The content of the invention
The present invention is related to be widely used in the light emitting diode (Light Emitting Diode, LED) of display device,
Light emitting diode size dimension is reduced into less than 100 microns to be made on array base palte, forms light emitting diode indicator.
The present invention provides a kind of light emitting diode indicator, including first substrate, pixel cell are arranged at the first substrate
On, the pixel cell includes red sub-pixel, green sub-pixels and blue subpixels, and the green sub-pixels have the miniature hair of green glow
Optical diode, the green glow it is micro-led including：Initial green glow is micro-led；Green color blocking coating, this is green
Color color blocking coating is covered in the micro-led outer surface of the initial green glow, and the green color blocking coating has at least
One opening；And first contact electrode, be arranged on the green color blocking coating, and this first contact electrode from this at least one
It is micro-led that opening is electrically connected to the initial green glow；Wherein, the green color blocking coating is used to filter out the initial green glow
The micro-led light medium wave a length of 600nm to 650nm sent light.
Alternatively, it is vertical LED that the initial green glow is micro-led, and the initial green glow is miniature luminous
Diode includes the first type semiconductor layer, the first active layers and the second type semiconductor layer, and the first active layers are arranged at first type
On semiconductor layer, the second type semiconductor layer is arranged in first active layers, and second type semiconductor layer is with respect to first master
The surface of dynamic layer is exiting surface.
Alternatively, the first contact electrode layer is arranged at the exiting surface of second type semiconductor layer.
Alternatively, Ohmic contact is formed between the first contact electrode and second type semiconductor layer.
Alternatively, it is horizontal light emitting diode that the initial green glow is micro-led, and the initial green glow is miniature luminous
Diode includes the 3rd type semiconductor layer, the second active layers and the 4th type semiconductor layer, second active layers and the 4th type half
The 3rd type semiconductor layer is not completely covered for conductor layer so that the type semiconductor layer of part the 3rd is exposed；At least one opening
Including two second opening, two second opening one of cause part the 3rd type semiconductor layer be exposed, two
Second opening it is wherein another cause partly the 4th type semiconductor layer be exposed；Two second contact electrodes are formed at this
On green color blocking coating, two second contact one of electrodes are from two second opening one of them the 4th type of electrical connection
Semiconductor layer, two second contact electrodes are wherein another partly to lead from two second openings wherein the 3rd type of another electrical connection
Body layer.
Alternatively, the material of the first contact electrode and the second contact electrode is argent.
Alternatively, the red sub-pixel has that feux rouges is micro-led, the feux rouges it is micro-led including：Just
Beginning feux rouges is micro-led, red color resistance coating and the second contact electrode, the red color resistance coating are covered in this
The micro-led outer surface of initial feux rouges, the red color resistance coating is with least one opening；The second contact electricity
Pole is arranged on the red color resistance coating, and to be electrically connected to the initial feux rouges micro- from least one opening for the second contact electrode
Type light emitting diode.
Alternatively, the blue subpixels have that blue light is micro-led, the blue light it is micro-led including：Just
Beginning blue light is micro-led, blue color blocking coating and the 3rd contact electrode, the blue color blocking coating are covered in this
The micro-led outer surface of original blue light, the blue color blocking coating is with least one opening；3rd contact electricity
Pole is arranged on the blue color blocking coating, and to be electrically connected to the original blue light micro- from least one opening for the 3rd contact electrode
Type light emitting diode.
The present invention also provides a kind of light emitting diode indicator, including first substrate, and pixel cell is arranged at first base
On plate, the pixel cell includes red sub-pixel, green sub-pixels and blue subpixels, in addition to：Second substrate, with this first
Substrate is oppositely arranged；And chromatic filter layer, the second substrate is arranged on the surface of the first substrate, colour filter
Photosphere includes, red color resistance, green color blocking and blue color blocking, the red color resistance, the green color blocking and the blue color blocking respectively with
The red sub-pixel, the green sub-pixels and the blue subpixels correspond；Wherein, the green sub-pixels have initial green glow
It is micro-led；And the green color blocking layer is used to filter out the micro-led light medium wavelength sent of the initial green glow
For 600nm to 650nm light.
Compared with prior art, the present invention by set green color blocking on green glow is micro-led, green glow is micro-
The light that type light emitting diode is sent is filtered, and to filter out unnecessary light, only allows the light of wavelength of needs to be extracted
And lighted.In addition, the electrode layer of the composition Ohmic contact on the green glow that can also arrange in pairs or groups is micro-led is to different wave length
Characteristic with different penetrances, further to reduce the intensity of unwanted wavelength, and then solve above-mentioned colour cast, improve aobvious
Show quality.
Brief description of the drawings
Fig. 1 is the partial cutaway schematic of existing light emitting diode indicator.
Fig. 2 is the partial cutaway schematic of the light emitting diode indicator of first embodiment of the invention.
Fig. 3 A to Fig. 3 G are the partial cutaway schematic of the part preparation process of Fig. 2 light emitting diode indicator.
Fig. 4 is the partial cutaway schematic of the light emitting diode indicator of second embodiment of the invention.
Fig. 5 A to Fig. 5 G are the partial cutaway schematic of Fig. 4 light emitting diode indicator part preparation process.
Fig. 6 is the partial cutaway schematic of the light emitting diode indicator of third embodiment of the invention.
Fig. 7 is the partial cutaway schematic of the light emitting diode indicator of fourth embodiment of the invention.
Embodiment
To become apparent from present disclosure and more accurately understanding, it will be described in detail with reference to the accompanying drawings, say now
Bright book accompanying drawing shows the example of embodiments of the invention, wherein, identical label represents identical element.It is understood that
The actual ratio implemented of ratio and non-invention shown in Figure of description, for the purpose of it is only schematically illustrate, and not according to original
Size is mapped.
Fig. 2 is the partial cutaway schematic of the light emitting diode indicator of first embodiment of the invention；Fig. 3 A to Fig. 3 G are
The partial cutaway schematic of Fig. 2 light emitting diode indicator part preparation process.
Light emitting diode indicator proposed by the present invention includes multiple pixel cells (not shown), and each pixel cell can wrap
Contain multiple sub-pixels, such as red sub-pixel, green sub-pixels and blue subpixels；Or first sub-pixel, the second sub- picture
Element and the 3rd sub-pixel), and each sub-pixel can include the micro-led of one or more single colored lights, such as
It is micro-led that red sub-pixel can include one or more feux rouges, green sub-pixels and blue subpixels also class according to this
Push away, wherein micro-led size is micron grade.More specifically, micro-led size is less than 100
Micron.
The light emitting diode indicator of the present invention, it is miniature luminous that green glow in existing light emitting diode indicator can be improved
Diode lights the problem of partially yellow when low-voltage (such as less than 2V) drives.Furthermore, light emitting diode of the invention
Display is by green color blocking is set on initial green glow is micro-led, by the micro-led light sent of green glow
Line is filtered, and to filter out unnecessary noise, only allows the light of wavelength of needs to be extracted and lighted.In addition, may be used also
The electrode layer of composition Ohmic contact on collocation green glow is micro-led has different penetrances to the light of different wave length
Characteristic, further to reduce the intensity of the light of unwanted wavelength, and then solve above-mentioned colour cast, improve display quality.
The light emitting diode indicator 200 of the present invention includes multiple pixel cells (not shown) for being arranged at viewing area, often
One pixel cell includes the first sub-pixel, the second sub-pixel and the 3rd sub-pixel, such as can be respectively red sub-pixel, green
Sub-pixel and blue subpixels, but be not limited thereto.In addition, each sub-pixel can include at least one miniature luminous two
Pole pipe.As shown in Fig. 2 the first sub-pixel can be micro-led comprising at least one first, such as feux rouges miniature luminous two
Pole pipe 23, the second sub-pixel can be micro-led comprising at least one second, such as green glow micro-led 24, the
Three sub-pixels can be micro-led comprising at least one 3rd, such as blue light micro-led 25.
In the present embodiment, a feux rouges micro-led 23 may be used to form red sub-pixel, and a green glow is miniature
Light emitting diode 24 may be used to form green sub-pixels, and a blue light micro-led 25 may be used to form the sub- picture of blueness
Element, the combination of the light sent by red, green and blue subpixels, it may be such that light emitting diode indicator 200 is aobvious
Full-color image is shown.
The first substrate 20 of light emitting diode indicator 200 can be active component array base board.More specifically, the first base
Plate 20 include multiple image element circuits (in Fig. 2 exemplified by depicting three pixel single channel, and being respectively labeled as T1, T2, T3), absolutely
Edge layer 21, pixel defining layer 22, an at least first electrode (in Fig. 2 exemplified by depicting three first electrodes, and are respectively labeled as
261st, 262,263) and an at least second electrode 28.Three image element circuits T1, T2, the T3 marked in Fig. 2 are respectively positioned at relative
In red sub-pixel, green sub-pixels and the blue subpixels answered, to drive respectively, feux rouges is micro-led 23, green glow
Micro-led 24 and blue light micro-led 25.In one embodiment, image element circuit T1, T2, T3 be for example
Include transistor, data wire, scan line etc., can be used to drive that feux rouges is micro-led 23, green glow is miniature luminous respectively
Diode 24 and blue light micro-led 25 are luminous.Insulating barrier 250 covers image element circuit T1, T2, T3.Pixel defining layer
22 on the insulating barrier 21, and pixel defining layer 21 include multiple openings, and feux rouges is micro-led 23, green glow is miniature lights
Diode 24, blue light micro-led 25 is respectively in corresponding be open.First electrode 261,262,263 can distinguish position
In corresponding opening and image element circuit T1, T2, T3 is electrically connected in three first electrodes 261,262,263.Implement one
In mode, first electrode 261,262,263 may include nontransparent conductive material such as silver, aluminium, copper, magnesium or molybdenum, electrically conducting transparent material
Expect such as tin indium oxide, indium zinc oxide or the alloy of aluminum zinc oxide, the composite bed of above-mentioned material or above-mentioned material, but not with this
It is limited.First electrode 261,262,263 is in addition to good electric conductivity also with light reflective.
In insulating barrier 21 can have multiple through holes (three through holes are correspondingly depicted in Fig. 2, be respectively labeled as TH1, TH2,
TH3), image element circuit T1, T2 and T3 of part are exposed.Multiple openings of pixel defining layer 22 can expose respectively through hole TH1,
TH2, TH3, and when in being open corresponding to first electrode 261,262,263 is formed at, first electrode 261,262,263 can pass through
Through hole TH1, TH2, TH3 and image element circuit T1, T2, T3 are electrically connected with.In addition, three first electrodes 261,262,263 can be distinguished
It is electrically connected to feux rouges micro-led 23, green glow micro-led 24 and blue light micro-led 25
One end.It is micro- that second electrode 28 is then electrically connected with feux rouges micro-led 23, green glow micro-led 24 and blue light
The other end of type light emitting diode 25.In the present embodiment, second electrode 28 can be used as common electrode.
With continued reference to Fig. 2 to Fig. 3 C, the micro-led 24A of initial green glow for being not provided with color blocking coating of the invention
(as shown in Figure 3A).The present invention is further in its outer surface covering green color blocking layer 244 (as shown in Figure 3 B), to utilize green
The light that the 24A micro-led to initial green glow of color blocking layer 244 is sent is filtered, and light medium wavelength is located at into 600-
650nm light is filtered out, and then improves the initial micro-led 24A of green glow in low voltage drive, and color is partially yellow
The problem of.Further, as shown in Figure 3 C, it is miniature to expose the initial green glow in part to have opening for green color blocking coating 244
Light emitting diode 24A the second type semiconductor layer 243, and electrode 245 is contacted in setting first in the second type semiconductor layer 243,
It is preferred that the material of the first contact electrode 245 is silver, continued by the first contact layer 245 to the miniature light-emitting diodes of initial green glow
The light that pipe 24A is sent is filtered, micro- more preferably to improve initial green glow to filter out the light that wavelength is located at 600-650nm
Type light emitting diode 24A is in low voltage drive, the problem of color is partially yellow, improves display quality.In addition, it is not provided with color blocking covering
The micro-led 24A of initial green glow of layer is, for example, vertical LED, includes the be sequentially laminated from bottom to top
One type semiconductor layer 241, the first active layers 242 and the second type semiconductor layer 243, the second type semiconductor layer 243 relative first
The surface of active layers 242 has exiting surface.Wherein, the initial green glow that green color blocking coating 244 is covered in shown in Fig. 3 A is micro-
Type light emitting diode 24A relative two side, and upper surface (the corresponding light extraction of the second type semiconductor layer 243 of part covering
Face).The opening of first contact electrode 245 from green color blocking coating 244 electrically contacts to the second type semiconductor layer 243, and the
One contact electrode 245 is arranged on green color blocking coating 244.
, can be only miniature to green glow due to the colour cast for focusing on solving the problems, such as green glow micro-led 24 of the present invention
The structure of light emitting diode 24 is improved as described above.For example, the fourth embodiment diode displaying shown in Fig. 7
Device 200 ', it sets green color blocking coating 244 only for green glow micro-led 24, while not miniature in initial feux rouges
Light emitting diode 23A color blocking coatings corresponding with setting on the micro-led 25A of original blue light.Wherein, display
200 ' with the element with identical label in display 200 with similar function, do not repeat separately.
Certainly, also can be in the micro-led 23A of initial feux rouges and original blue light in order to obtain more preferable display quality
Micro-led 25A forms corresponding color blocking coating to form and micro-led 24 similar knot of green glow respectively
Structure.
Specifically, as shown in Fig. 3 A~3G, the micro-led 23A examples of initial feux rouges of color blocking coating are not provided with
Such as be vertical LED, from bottom to top include sequentially be laminated the first type semiconductor layer 231, the first active layers 232 with
And second type semiconductor layer 233, the surface of 233 relative first active layers 232 of the second type semiconductor layer have exiting surface.Wherein,
Red color resistance coating 234 is covered in relative two side of the micro-led 23A of initial feux rouges shown in Fig. 3 A,
And the upper surface (corresponding exiting surface) of the second type semiconductor layer 233 of part covering.Second contact electrode 235 covers from red color resistance
The opening of layer 234 electrically contacts to the second type semiconductor layer 233, and the second contact electrode 235 is arranged at red color resistance coating
On 234.
As shown in Fig. 3 A~3G, the micro-led 25A of original blue light for being not provided with color blocking coating is for example, vertical
Formula light emitting diode, include the first type semiconductor layer 251, the first active layers 252 and the Second-Type being sequentially laminated from bottom to top
Semiconductor layer 253, the surface of 253 relative first active layers 252 of the second type semiconductor layer have exiting surface.Wherein, blue color blocking
Coating 254 is covered in relative two side of the micro-led 25A of original blue light shown in Fig. 3 A, and part is covered
The upper surface (corresponding exiting surface) of the second type semiconductor layer of lid 253.3rd contacts electrode 255 from blue color blocking coating 254
Opening electrically contacts to the second type semiconductor layer 253, and the 3rd contact electrode 255 is arranged on blue color blocking coating 254.
Wherein, by red color resistance coating 234 and be arranged at red color resistance coating 234 second contact electrode layer
235 can filter out unwanted light in feux rouges micro-led 23 so that the light that feux rouges micro-led 23 is sent
Line more meets expection；Similarly, by blue color blocking coating 254 and the 3rd contact being arranged on blue color blocking coating 254
Electrode layer 255 can filter out unwanted light in blue light micro-led 25 so that micro-led 25 hair of blue light
The light gone out more meets expection.Therefore, the setting pair on the micro-led surface of initial red, green, blue light is utilized
The color blocking coating answered and contact electrode layer, to filter out unwanted light so that micro-led display it is each
The light of color meets expection, and then obtains the display effect of high-quality.It is further, since miniature in initial red, green, blue light
Color blocking coating corresponding to being set on the surface of light emitting diode and contact electrode layer, therefore, whole display internal structure
Flatness is more uniform, and difference in height is not present between each pixel, thus has good structural strength.
With continued reference to Fig. 2, light emitting diode indicator 200 also includes optical package layer 30, and it is arranged at pixel defining layer
Between 22 and second electrode 28, optical package layer 30 is, for example, insulated plastic or ceramic material, to prevent the impurity in air
Corrode each micro-led and cause its electric property to decline.Second substrate 29 is arranged at the top of second electrode 28, the
Two substrates 29 are that transparent cover plate is used for protection setting in the photoelectric cell on first substrate 20, to lift light emitting diode indicator
200 intensity.Electrical tack coat 271,272,273 is provided with first electrode 261,262,263.For example, electrically bond
Layer 271,272,273 is conducting resinl or other suitable conductive materials, and its conductive material can be such as indium (In), bismuth (Bi), tin
(Sn), silver-colored (Ag), golden (Au), copper (Cu), at least one of which of gallium (Ga) and antimony (Sb), but be not limited.Electrically bond
Layer 271,272,273 by red, green and blue light micro-led 23,24,25 being fixed on pixel defining layer 22
Corresponding opening in, and be electrically connected with each first electrode 261,262,263.
Fig. 3 A to Fig. 3 B are the diagrammatic cross-section of the preparation process of the part-structure of light emitting diode indicator 200 in Fig. 2.
As shown in Fig. 3 A to Fig. 3 B, the micro-led 23A of initial feux rouges, initial green glow miniature luminous two is provided respectively
The pole pipe 24A and micro-led 25A of original blue light, is respectively coated red color resistance coating 234, green color blocking coating
244 and blue color blocking coating 254 to it is corresponding it is initial it is micro-led on；
As shown in Figure 3 C, the second contact electrode 235 is formed on red color resistance coating 234 and electrically connecting Second-Type and partly lead
The upper surface of body layer 233, to form feux rouges micro-led 23；Similarly, the first contact electrode 245 is formed in green color blocking
On coating 244 and the upper surface of the second type semiconductor layer 243 is electrically connected, to form green glow micro-led 24；Formed
3rd contact electrode 255 on blue color blocking coating 254 and electrically connect the second type semiconductor layer 253 upper surface, with form
Blue light micro-led 25；
As shown in Fig. 3 D to 3E, there is provided active array substrate such as first substrate 20, by being arranged at first substrate 20
Electrical tack coat 271,272,273 in the opening of pixel defining layer 22 is respectively by red, green and blue light miniature luminous two
Pole pipe 23,24,25 is open corresponding to being fixed to, and via electrical tack coat 271,272,273 cause red, green and
Blue light micro-led 23,24,25 is electrically connected with each first electrode 261,262,263；
As illustrated in Figure 3 F, optical package layer 30 is formed in pixel defining layer 22, and optical package layer 30 covers red, green
And blue light micro-led 23,24,25, prevent external environment from being impacted to the performance of each light emitting diode；
As shown in Figure 3 G, second electrode 28 is continuously formed.Second electrode 28 can be the electrode of light-permeable, be for electrically connecting to
Red, green and micro-led 23,24,25 other end of blue light.
Fig. 4 is the diagrammatic cross-section of the light emitting diode indicator of second embodiment of the invention；Fig. 5 A to Fig. 5 G are Fig. 4's
The diagrammatic cross-section of light emitting diode indicator part preparation process.
As shown in figure 4, the area of light emitting diode indicator 400 and the light emitting diode indicator 200 in first embodiment
It is not, the light emitting diode of each color of light emitting diode indicator 400 is horizontal light emitting diode.Wherein, luminous two
Pole pipe display 400, with similar function, is not gone to live in the household of one's in-laws on getting married separately with the element with identical label in light emitting diode indicator 200
State.
Please with reference to Fig. 4 to Fig. 5 G, red, green and blue light micro-led 43,44,45 are respectively level
Formula light emitting diode.
Specifically, as shown in Figure 5A, the micro-led 43A of initial feux rouges includes the 3rd type semiconductor from bottom to top
The 431, second active layers 432 of layer and the 4th type semiconductor layer 433, wherein, the second active layers 432 and the 4th type semiconductor layer 433
The 3rd type semiconductor layer 431 is not completely covered so that the type semiconductor layer 431 of part the 3rd is exposed.Similarly, initial green glow is micro-
Type light emitting diode 44A includes the 3rd type semiconductor layer 441, the second active layers 442 and the 4th type semiconductor layer from bottom to top
443, wherein, the 3rd type semiconductor layer 441 is not completely covered for the second active layers 442 and the 4th type semiconductor layer 443 so that part
3rd type semiconductor layer 441 is exposed；The micro-led 45A of original blue light includes the 3rd type semiconductor layer from bottom to top
451st, the second active layers 452 and the 4th type semiconductor layer 453, wherein, the second active layers 452 and the 4th type semiconductor layer 453 are not
The 3rd type semiconductor layer 451 is completely covered so that the type semiconductor layer 451 of part the 3rd is exposed.
As shown in Fig. 5 A and 5B, coating red color resistance coating 434 is in the micro-led 43A of initial feux rouges outside
Surface, wherein, red color resistance coating 434 have two first opening, two first opening one of cause the 3rd type
The part of semiconductor layer 431 is exposed, wherein another part for causing the 4th type semiconductor layer 433 of two first openings
It is exposed.Similarly, green color blocking coating 444 is coated with the micro-led 44A of initial green glow outer surface, its
In, green color blocking coating 444 have two second opening, two second opening one of cause the 3rd type semiconductor layer
441 part is exposed, and wherein another part for causing the 4th type semiconductor layer 443 of two second openings is exposed
Go out；Blue color blocking coating 454 is coated with the micro-led 45A of original blue light outer surface, wherein, blue color blocking is covered
Cap rock 454 have two the 3rd opening, two the 3rd opening one of make it that the part of the 3rd type semiconductor layer 451 is sudden and violent
Expose, wherein another part for causing the 4th type semiconductor layer 453 of two the 3rd openings is exposed.
As shown in Figure 5 C, in forming two second contact electrodes 435,436 on red color resistance coating 434, one second connects
Touched electrode 435 is open from two first, and one of them electrically connects the 4th type semiconductor layer 433, and another second contact electrode 436 is certainly
Two first openings wherein the 3rd type semiconductor layer 431 of another electrical connection, forms feux rouges micro-led 43.Similarly,
In forming two first contact electrodes 445,446 on green color blocking coating 444, one first contact electrode 445 is from two second
One of them the 4th type semiconductor layer 443 of electrical connection of opening, another first contact electrode 446 are wherein another from two second openings
One the 3rd type semiconductor layer 441 of electrical connection, forms green glow micro-led 44；Formed on blue color blocking coating 454
Two the 3rd contact electrodes 455,456, one the 3rd contact electrode 455 is open from two the 3rd, and one of them electrically connects the 4th type half
Conductor layer 453, another 3rd contact electrode 456 electrically connect the 3rd type semiconductor layer 451 from two the 3rd openings are wherein another,
Form blue light micro-led 45.
As shown in Fig. 5 D to Fig. 5 E, there is provided base plate of array in active mode such as first substrate 20, by red, green and blue light
Micro-led 43,44,45 affix in the corresponding opening of the pixel defining layer 22 of first substrate 20 respectively.
As illustrated in figure 5f, splash and cross to form conduction electrode layer.In forming the first electric conduction on feux rouges micro-led 43
Pole, the first conduction electrode include the first conducting portion 437 and the second conducting portion 438, the first conducting portion 437 and the second conducting portion 438
First electrode 261 in electrical contact respectively, wherein, the first conducting portion 437 and the second conducting portion 435 are electrically connected the second contact electricity
Pole 435,436.Similarly, in forming the second conduction electrode on green glow micro-led 44, the second conduction electrode includes the
One conducting portion 447 and the second conducting portion 448, the first conducting portion 447 and the second conducting portion 448 distinguish first electrode in electrical contact
262, wherein, the first conducting portion 447 and the second conducting portion 448 are electrically connected the second contact electrode 445,446.It is miniature in blue light
The 3rd conduction electrode is formed on light emitting diode 45, the 3rd conduction electrode includes the first conducting portion 457 and the second conducting portion 458,
First conducting portion 457 and the second conducting portion 458 distinguish first electrode 263 in electrical contact, wherein, the first conducting portion 457 and second
Conducting portion 458 is electrically connected the second contact electrode 455,456.In the present embodiment, red, green and blue light miniature luminous two
Pole pipe 43,44,45 is horizontal light emitting diode, by being formed respectively on the contact electrode of two different type semiconductor layers
Conducting portion, and conduction electrode layer is connected to image element circuit T1, T2, T3 by first electrode layer 261,262,263 respectively.
As depicted in fig. 5g, continuously form optical package layer 30 in pixel defining layer 22, optical package layer 30 cover it is red,
Green and blue light micro-led 43,44,45, prevent external environment from being impacted to the performance of each light emitting diode.
For light emitting display device 400, the green glow using green color blocking coating is micro-led
44, by green color blocking coating to filter out some light that the micro-led 44A of initial green glow is sent, such as wavelength is
600nm to 650nm light.Meanwhile by the contact electrode set on the semiconductor layer, it is miniature further to filter initial green glow
The light that light emitting diode 44A is sent, when can improve low-voltage (such as voltage 2V) driving, micro-led 44 hair of green glow
The problem of light is partially yellow.
Referring to Fig. 4, in the present embodiment, red, green and the blue light miniature luminous two of light emitting display device 400
Pole pipe 43,44,45 is respectively arranged with corresponding color blocking coating, but is not limited.In other embodiments of the invention, may be used
The setting green color blocking coating only in green glow micro-led 44, and red, micro-led 43,45 nothing of blue light
Red color resistance coating and blue color blocking coating corresponding to need to setting.
Fig. 6 is the diagrammatic cross-section of the light emitting diode indicator of third embodiment of the invention.
The difference of light emitting diode indicator 600 and light emitting diode indicator 200 is, corresponding to red, green with
And the set location of the micro-led each color blocking coating of blue light is different, wherein, light emitting diode indicator 600 with
Element with identical label in light emitting diode indicator 200 does not repeat separately with similar function.
As shown in fig. 6, red, green and blue light micro-led 63,64,65 are the pole of vertical light-emitting two
Pipe, but be not limited.In other embodiments of the present invention, red, green and blue light micro-led 63,64,65
Also can be horizontal light emitting diode.
The second substrate 29 of light emitting diode indicator 600 is provided with colorized optical filtering in face of a side surface of first substrate 20
Layer, it includes red color resistance layer 81, green color blocking layer 82 and blue color blocking layer 83, wherein, red color resistance layer 81 is corresponding initial
Feux rouges micro-led 63, the corresponding initial green glow micro-led 64 of green color blocking layer 82, blue color blocking layer 83 is right
Answer original blue light micro-led 84.
In setting green color blocking layer 82 on second substrate 29, and the corresponding green glow of green color blocking layer 82 is micro-led
64 so that light of the light medium wavelength that initial green glow micro-led 64 is sent at 600nm to 650nm can also be filtered
The problem of micro-led 64 color of green glow is partially yellow when removing, and then improving low voltage drive.Similar, there is provided red color
Resistance layer 81 and blue color blocking layer 83, the even structure of light emitting diode indicator 600 everywhere, the thickness of each pixel can be both caused
It is unified.And the light that the corresponding initial feux rouges micro-led 63 of red color resistance layer 81 is sent is filtered, blue color blocking layer
The light that 83 pairs of original blue lights micro-led 65 are sent filters so that initial micro-led 63 grades of feux rouges
The light that original blue light micro-led 65 is sent is purer, the display of further optimized emission diode display 600
Uniformity.
Certainly, the present invention can also have other various embodiments, ripe in the case of without departing substantially from spirit of the invention and its essence
Various corresponding changes and deformation, but these corresponding changes and deformation can be made according to the present invention by knowing those skilled in the art
The protection domain of appended claims of the invention should all be belonged to.
Claims (9)
1. a kind of light emitting diode indicator, including first substrate, pixel cell is arranged on the first substrate, the pixel cell
Including red sub-pixel, green sub-pixels and blue subpixels, it is characterised in that
The green sub-pixels have that green glow is micro-led, the green glow it is micro-led including：
Initial green glow is micro-led；
Green color blocking coating, the green color blocking coating are covered in the micro-led outer surface of the initial green glow,
The green color blocking coating is with least one opening；And
First contact electrode, is arranged on the green color blocking coating, and the first contact electrode is electrically connected from least one opening
It is micro-led to be connected to the initial green glow；
Wherein, the green color blocking coating is used to filtering out the micro-led light medium wave that sends of the initial green glow a length of
600nm to 650nm light.
2. light emitting diode indicator as claimed in claim 1, it is characterised in that initial green glow is micro-led is for this
Vertical LED, the initial green glow are micro-led including the first type semiconductor layer, the first active layers and second
Type semiconductor layer, the first active layers are arranged in first type semiconductor layer, and the second type semiconductor layer is arranged at first active
On layer, and second type semiconductor layer back to the surface of first active layers be exiting surface.
3. light emitting diode indicator as claimed in claim 2, it is characterised in that the first contact electrode layer be arranged at this
The exiting surface of two type semiconductor layers.
4. light emitting diode indicator as claimed in claim 2, it is characterised in that the first contact electrode and the Second-Type half
Ohmic contact is formed between conductor layer.
5. light emitting diode indicator as claimed in claim 1, it is characterised in that initial green glow is micro-led is for this
Horizontal light emitting diode, the initial green glow are micro-led including the 3rd type semiconductor layer, the second active layers and the 4th
The 3rd type semiconductor layer is not completely covered for type semiconductor layer, second active layers and the 4th type semiconductor layer so that part
3rd type semiconductor layer is exposed；This at least one opening include two second opening, two second be open one of make
Part the 3rd type semiconductor layer be exposed, two second opening it is wherein another cause partly the 4th type semiconductor
Layer is exposed；Two second contact electrodes are formed on the green color blocking coating, and two second contact one of electrode
Be open one of them the 4th type semiconductor layer of electrical connection from two second, and two second contact electrodes are wherein another from two
Second opening wherein the 3rd type semiconductor layer of another electrical connection.
6. light emitting diode indicator as stated in claim 5, it is characterised in that the first contact electrode and second contact
The material of electrode is argent.
7. the light emitting diode indicator as shown in claim 1, it is characterised in that the red sub-pixel has the miniature hair of feux rouges
Optical diode, the feux rouges it is micro-led including：Initial feux rouges is micro-led, red color resistance coating and the
Two contact electrodes, the red color resistance coating are covered in the micro-led outer surface of the initial feux rouges, the red color
Coating is hindered with least one opening；The second contact electrode is arranged on the red color resistance coating, and the second contact electricity
From at least one opening, to be electrically connected to the initial feux rouges micro-led for pole.
8. the light emitting diode indicator as shown in claim 1, it is characterised in that the blue subpixels have the miniature hair of blue light
Optical diode, the blue light it is micro-led including：Original blue light is micro-led, blue color blocking coating and
Three contact electrodes, the red color resistance coating are covered in the micro-led outer surface of the original blue light, the blue color
Coating is hindered with least one opening；3rd contact electrode is arranged on the blue color blocking coating, and the 3rd contact electricity
From at least one opening, to be electrically connected to the original blue light micro-led for pole.
9. a kind of light emitting diode indicator, including first substrate, pixel cell is arranged on the first substrate, the pixel cell
Including red sub-pixel, green sub-pixels and blue subpixels, it is characterised in that the light emitting diode indicator also includes：
Second substrate, it is oppositely arranged with the first substrate；And
Chromatic filter layer, the second substrate is arranged on the surface of the first substrate, the chromatic filter layer includes red color
Resistance, green color blocking and blue color blocking, the red color resistance, the green color blocking and the blue color blocking respectively with the red sub-pixel, should
Green sub-pixels correspond with the blue subpixels；
Wherein, the green sub-pixels have initial green glow micro-led；And the green color blocking layer is initial for filtering out this
The micro-led light medium wave a length of 600nm to 650nm sent of green glow light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711077697.2A CN107731863A (en) | 2017-11-06 | 2017-11-06 | Light emitting diode indicator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711077697.2A CN107731863A (en) | 2017-11-06 | 2017-11-06 | Light emitting diode indicator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107731863A true CN107731863A (en) | 2018-02-23 |
Family
ID=61221552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711077697.2A Pending CN107731863A (en) | 2017-11-06 | 2017-11-06 | Light emitting diode indicator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107731863A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109148506A (en) * | 2018-08-24 | 2019-01-04 | 上海天马微电子有限公司 | Micro LED transfer method and display panel, display device |
| CN109585488A (en) * | 2019-01-02 | 2019-04-05 | 京东方科技集团股份有限公司 | LED display base plate and preparation method thereof, display device |
| TWI681556B (en) * | 2018-09-11 | 2020-01-01 | 友達光電股份有限公司 | Light emitting diode display apparatus and manufacturing method thereof |
| TWI690074B (en) * | 2018-05-08 | 2020-04-01 | 大陸商業成科技（成都）有限公司 | Display panel, manufacture method thereof and electronic device having same |
| WO2020134995A1 (en) * | 2018-12-25 | 2020-07-02 | 惠科股份有限公司 | Array substrate manufacturing method for display apparatus, and display apparatus |
| CN111369922A (en) * | 2018-12-26 | 2020-07-03 | 光远科技股份有限公司 | Test method of light-emitting unit |
| CN111710691A (en) * | 2020-06-05 | 2020-09-25 | 深圳市华星光电半导体显示技术有限公司 | Flexible Micro-LED display panel and manufacturing method thereof |
| WO2020215417A1 (en) * | 2019-04-24 | 2020-10-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel and method for manufacturing display panel |
| WO2021017493A1 (en) * | 2019-07-31 | 2021-02-04 | 成都辰显光电有限公司 | Light emitting diode chip array and manufacturing method therefor, and display panel |
| CN112786764A (en) * | 2021-02-26 | 2021-05-11 | 维沃移动通信有限公司 | Light emitting device, display module, and method of manufacturing light emitting device |
| CN113097191A (en) * | 2020-01-08 | 2021-07-09 | 刘台徽 | Micro light-emitting diode and packaging method thereof |
| CN113224104A (en) * | 2021-06-21 | 2021-08-06 | 錼创显示科技股份有限公司 | Micro light-emitting diode display device |
| CN113451350A (en) * | 2021-06-30 | 2021-09-28 | 上海天马微电子有限公司 | Display panel and display device |
| CN113809116A (en) * | 2021-09-16 | 2021-12-17 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| EP3965155A1 (en) * | 2020-09-04 | 2022-03-09 | Samsung Electronics Co., Ltd. | Micro-light-emitting diode display apparatus and method of manufacturing the same |
| CN114721184A (en) * | 2021-11-25 | 2022-07-08 | 友达光电股份有限公司 | Display device |
-
2017
- 2017-11-06 CN CN201711077697.2A patent/CN107731863A/en active Pending
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI690074B (en) * | 2018-05-08 | 2020-04-01 | 大陸商業成科技（成都）有限公司 | Display panel, manufacture method thereof and electronic device having same |
| US10741739B2 (en) | 2018-08-24 | 2020-08-11 | Shanghai Tianma Micro-electronics Co., Ltd. | Micro LED transferring method, micro LED display panel and micro LED display device |
| CN109148506A (en) * | 2018-08-24 | 2019-01-04 | 上海天马微电子有限公司 | Micro LED transfer method and display panel, display device |
| CN109148506B (en) * | 2018-08-24 | 2021-04-13 | 上海天马微电子有限公司 | Micro LED transfer method, display panel and display device |
| TWI681556B (en) * | 2018-09-11 | 2020-01-01 | 友達光電股份有限公司 | Light emitting diode display apparatus and manufacturing method thereof |
| US10777543B2 (en) | 2018-09-11 | 2020-09-15 | Au Optronics Corporation | Light emitting diode display apparatus and manufacturing method thereof |
| WO2020134995A1 (en) * | 2018-12-25 | 2020-07-02 | 惠科股份有限公司 | Array substrate manufacturing method for display apparatus, and display apparatus |
| CN111369922B (en) * | 2018-12-26 | 2024-01-09 | 光远科技股份有限公司 | Test method of light-emitting unit |
| CN111369922A (en) * | 2018-12-26 | 2020-07-03 | 光远科技股份有限公司 | Test method of light-emitting unit |
| CN109585488A (en) * | 2019-01-02 | 2019-04-05 | 京东方科技集团股份有限公司 | LED display base plate and preparation method thereof, display device |
| WO2020215417A1 (en) * | 2019-04-24 | 2020-10-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel and method for manufacturing display panel |
| WO2021017493A1 (en) * | 2019-07-31 | 2021-02-04 | 成都辰显光电有限公司 | Light emitting diode chip array and manufacturing method therefor, and display panel |
| CN113097191B (en) * | 2020-01-08 | 2024-04-12 | 刘台徽 | Micro light emitting diode and packaging method thereof |
| CN113097191A (en) * | 2020-01-08 | 2021-07-09 | 刘台徽 | Micro light-emitting diode and packaging method thereof |
| WO2021244022A1 (en) * | 2020-06-05 | 2021-12-09 | 深圳市华星光电半导体显示技术有限公司 | Flexible micro-led display panel and method for manufacturing same |
| CN111710691A (en) * | 2020-06-05 | 2020-09-25 | 深圳市华星光电半导体显示技术有限公司 | Flexible Micro-LED display panel and manufacturing method thereof |
| EP3965155A1 (en) * | 2020-09-04 | 2022-03-09 | Samsung Electronics Co., Ltd. | Micro-light-emitting diode display apparatus and method of manufacturing the same |
| US11764194B2 (en) | 2020-09-04 | 2023-09-19 | Samsung Electronics Co., Ltd. | Micro-light-emitting diode display apparatus and method of manufacturing the same |
| CN112786764A (en) * | 2021-02-26 | 2021-05-11 | 维沃移动通信有限公司 | Light emitting device, display module, and method of manufacturing light emitting device |
| CN113224104A (en) * | 2021-06-21 | 2021-08-06 | 錼创显示科技股份有限公司 | Micro light-emitting diode display device |
| CN113451350A (en) * | 2021-06-30 | 2021-09-28 | 上海天马微电子有限公司 | Display panel and display device |
| CN113809116A (en) * | 2021-09-16 | 2021-12-17 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN113809116B (en) * | 2021-09-16 | 2024-02-13 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN114721184A (en) * | 2021-11-25 | 2022-07-08 | 友达光电股份有限公司 | Display device |
| CN114721184B (en) * | 2021-11-25 | 2023-06-20 | 友达光电股份有限公司 | Display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107731863A (en) | Light emitting diode indicator | |
| CN103715231B (en) | Organic electroluminescence display panel, display device | |
| TWI665800B (en) | Light emitting diode display and manufacturing method thereof | |
| US11271062B2 (en) | Double-sided display panel and preparation method thereof | |
| CN104885251B (en) | Transparent organic light emitting display device and method for manufacturing the same | |
| CN104885250B (en) | Transparent organic light-emitting display device and manufacture method thereof | |
| CN104659057B (en) | Array base palte for display device | |
| US7812519B2 (en) | Top-emitting organic electroluminescent display | |
| US11164918B2 (en) | Organic light emitting diode display panel having connection portion connecting organic light emitting diode to peripheral circuit and manufacturing method thereof | |
| CN103839965B (en) | Organic LED display device and its manufacture method | |
| US20130056714A1 (en) | Organic el display, method of producing organic el display, and electronic unit | |
| CN104241325B (en) | Display device | |
| CN103681747B (en) | Organic light-emitting display device | |
| CN103219469B (en) | Light emitting assembly | |
| CN103855191A (en) | Display device and method of manufacturing the same | |
| CN203631557U (en) | An organic light-emitting display panel and a display apparatus | |
| CN107452780A (en) | Oled substrate and preparation method, display device | |
| CN110021630A (en) | Organic electroluminescence display device and method of manufacturing same and its manufacturing method | |
| US10854587B2 (en) | Micro LED display panel with narrowed border area and method for making same | |
| CN110518053A (en) | Display base plate and preparation method thereof, display device | |
| CN209571417U (en) | Display device and display device | |
| CN110098235A (en) | Display panel and preparation method thereof | |
| CN107731877A (en) | A kind of color membrane substrates, its preparation method and display device | |
| CN107819016A (en) | Display panel and display device | |
| CN103681757A (en) | Electroluminescence display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180223 |
|
| WD01 | Invention patent application deemed withdrawn after publication |