CN209571417U - Display device and display device - Google Patents
Display device and display device Download PDFInfo
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- CN209571417U CN209571417U CN201920353436.7U CN201920353436U CN209571417U CN 209571417 U CN209571417 U CN 209571417U CN 201920353436 U CN201920353436 U CN 201920353436U CN 209571417 U CN209571417 U CN 209571417U
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- auxiliary electrode
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Abstract
The utility model relates to a kind of display device and display device, which includes substrate, reflection electrode layer, bulge-structure, auxiliary electrode layer, pixel defining layer, luminescent layer and transparent top electrode layer；Bulge-structure is disposed on the substrate, auxiliary electrode layer is covered on bulge-structure and is electrically connected with driving circuit, pixel defining layer is disposed on the substrate and covers auxiliary electrode layer, pixel defining layer has the first opening for being through to substrate and is through to the opening of auxiliary electrode layer second, second opening exposing auxiliary electrode layer is located at the part of the side of the separate substrate of bulge-structure, reflection electrode layer is set on substrate and is located in the first opening, luminescent layer is arranged on reflection electrode layer, transparent top electrode layer is integrally covered in auxiliary electrode layer, in pixel defining layer and luminescent layer.The display device and display device of the utility model can increase the contact area of transparent top electrode layer and auxiliary electrode layer, and then improve the connection effect of transparent top electrode layer and driving circuit.
Description
Technical field
The utility model relates to display panel fields, more particularly to a kind of display device and display device.
Background technique
The luminescent devices such as OLED are applied to new due to having many advantages, such as that self-luminous, visual angle be wide, the high and low power consumption of contrast
The fields such as generation mobile phone screen, computer monitor, full-color TV, get more and more people's extensive concerning.Wherein, top emission type device by
In bigger aperture opening ratio can be obtained, become the hot spot of research in recent years.But top emitting device is due to needing to increase light
The thickness of transmitance, top electrode is generally relatively thin, causes electrode sheet resistance larger, and voltage drop is serious, can cause display it is luminous not
Uniform phenomenon.
In order to improve the uniformity of luminance of top emission type device, the auxiliary being conducted with top transparent electrode is often introduced
Electrode reduces the voltage drop of top transparent electrode by the high conductivity of auxiliary electrode, improves the uniformity of light emission luminance.By
It is usually lighttight in auxiliary electrode, therefore cannot prepare on light emitting region.Currently, auxiliary electrode is usually to be arranged in base
It on plate, is made in the process of production bottom pixel electrod-array, opening is equipped in pixel defining layer for top transparent electrode
It is electrically connected by the opening with auxiliary electrode.However, due to pixel defining layer limited width, and open side needs are set as
Inclined-plane so as to top transparent electrode deposition so that the area that auxiliary electrode is used to connect with top transparent electrode is smaller,
Connection effect is poor.
Utility model content
Based on this, it is necessary to provide a kind of display device that can be improved top electrode and auxiliary electrode connection effect and display
Device.
A kind of display device, including substrate, reflection electrode layer, bulge-structure, auxiliary electrode layer, pixel defining layer, shine
Layer and transparent top electrode layer；
The substrate has driving circuit, and on the substrate, the auxiliary electrode layer covers for the bulge-structure setting
It is electrically connected on the bulge-structure and with the driving circuit, the pixel defining layer is arranged on the substrate and covers
The auxiliary electrode layer, the pixel defining layer have the first opening for being through to the substrate and are through to the auxiliary electrode
Second opening of layer, second opening at least exposed portion are located at the auxiliary electrode on the bulge-structure upper surface
Layer, the reflection electrode layer are set on the substrate and are located in first opening, and the luminescent layer is arranged in the reflection
On electrode layer, the transparent top electrode layer be integrally covered in the auxiliary electrode layer, the pixel defining layer and it is described shine
On layer.
A kind of display device, including encapsulating structure and the display device, the encapsulating structure is mounted on described aobvious
Show on device.
Compared with existing scheme, the utility model has the following beneficial effects:
Aforementioned display device part and display device, it is auxiliary by auxiliary electrode layer " padded " by the way that bulge-structure is arranged on substrate
The second open top end for helping electrode layer range pixel to define layer is closer, in this way, can increase transparent top electrode layer and auxiliary electrode
The contact area of layer, and then improve the connection effect of transparent top electrode layer and driving circuit.
In addition, the second of pixel defining layer the surface slope being open can be made smaller, be conducive to increase transparent top electrode layer
Second opening inclined-plane deposition thickness, reduce transparent top electrode layer sheet resistance, be conducive to the uniformity of luminance of display into
One step improves.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the display device of an embodiment；
Fig. 2 is a kind of production process schematic diagram of display device shown in Fig. 1, and wherein a~d is respectively each making step institute
The intermediate products of acquisition.
Specific embodiment
The utility model is more fully retouched below with reference to relevant drawings for the ease of understanding the utility model,
It states.The preferred embodiment of the utility model is given in attached drawing.But the utility model can come in many different forms in fact
It is existing, however it is not limited to embodiment described herein.On the contrary, purpose of providing these embodiments is makes public affairs to the utility model
The understanding for opening content is more thorough and comprehensive.
Unless otherwise defined, all technical and scientific terms used herein are led with the technology for belonging to the utility model
The normally understood meaning of the technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term as used herein "and/or" includes
Any and all combinations of one or more related listed items.
As shown in Figure 1, the display device 100 of an embodiment of the present invention, including substrate 110, reflection electrode layer 120,
Bulge-structure 130, auxiliary electrode layer 140, pixel defining layer 150, luminescent layer 160 and transparent top electrode layer 170.
Substrate 110 has driving circuit 112.Bulge-structure 130 is arranged on substrate 110.Auxiliary electrode layer 140 covers convex
It rises in structure 130 and is electrically connected with driving circuit 112.Pixel defining layer 150 is arranged on substrate 110 and covers auxiliary electrode
Layer 140, pixel defining layer 150 have the first opening 151 for being through to substrate 110 and are through to the second of auxiliary electrode layer 140
Opening 152.Second opening 152 at least exposed portion is located at the auxiliary electrode layer 140 on 130 upper surface of bulge-structure, reflection electricity
Pole layer 120 is set on substrate 110 and is located in the first opening 151, and luminescent layer 160 is arranged on reflection electrode layer 120.Transparent top
Electrode layer 170 is whole to be covered on auxiliary electrode layer 140, pixel defining layer 150 and luminescent layer 160.
Substrate 110 is used to carry other layers of display device, has driving circuit 112 on substrate 110, luminous for driving
Layer 160 shines.
Substrate 110 can be rigid substrates 110 or flexible base board 110, and rigid substrates 110 can be ceramic material, each
Class glass material etc., flexible base board 110 can be polyimides (PI) and its derivative, polyethylene naphthalate (PEN),
Phosphoenolpyruvate (PEP) and diphenylene ether resin etc..
Reflection electrode layer 120 is arranged on the luminous zone of substrate 110.Reflection electrode layer 120 is high-conductive metal layer, such as may be used
To be but not limited to aluminium layer, aluminium alloy layer, silver layer, ag alloy layer or ITO/Ag/ITO lamination.Made using this reflection electrode layer 120
For public electrode, since electric conductivity is preferable, sheet resistance is smaller, thus can effectively reduce electric current be injected into from display device edge it is aobvious
Show the voltage drop among device, so that voltage drop caused by avoiding because of common electrode electric conductivity deficiency, causes non-uniform light.
Bulge-structure 130 is arranged on the non-light-emitting area of substrate 110.Bulge-structure 130 can be prepared by organic material, preferably
For light-sensitive material, such as photoresist, it is graphical to be easy to be exposed development.In a wherein example, the height of bulge-structure 130
Degree is 200nm~500nm.In specific example shown in Fig. 1, along the direction far from substrate 110, the width of bulge-structure 130
Degree is gradually reduced, and longitudinal section is trapezoidal, and the deposition conducive to auxiliary electrode layer 140 is formed.Bulge-structure 130 have upper surface and
Side wall, the side of the separate substrate 110 of bulge-structure 130 are plane, i.e., the upper surface of bulge-structure 130 is plane, are conducive to saturating
Bright top electrode layer 170 deposits on the side, forms pixel electrode-auxiliary electrode overlap of plane, obtains good contact electricity
Connection.
In a wherein example, the side wall of bulge-structure 130 and the angle of substrate 110 are 45 °~70 °.
Auxiliary electrode layer 140 covers the side of the separate substrate 110 of bulge-structure 130 and is electrically connected with driving circuit 112.
For high-conductive metal layer, it can such as be but not limited to aluminium layer, aluminium-containing alloy layer, silver layer, folded containing ag alloy layer or ITO/Ag/ITO
Layer.For high-conductive metal layer, it can such as be but not limited to aluminium layer, aluminium-containing alloy layer, silver layer, contain ag alloy layer or ITO/Ag/ITO
Lamination.Preferably, the material of auxiliary electrode layer 140 is identical as reflection electrode layer 120, with reflecting electrode in same processing procedure figure
Change.
In a wherein example, auxiliary electrode layer 140 with a thickness of 100nm~300nm.
Photoresist preparation can be used in pixel defining layer 150.In a wherein example, the upper table of pixel defining layer 150
The problem of face is in lyophobicity, can avoid adjacent pixel hole colour mixture in ink jet printing process.There are pixel defining layer 150 two classes to open
Mouthful, the first opening 151 corresponds to pixel light emission area, defines the light-emitting area of each sub-pixel unit for exposing emission electrode layer
And position；Second opening 152 connects auxiliary electrode layer 140 for exposing auxiliary electrode layer 140, for transparent top electrode layer 170,
Form overlap.
As shown in Figure 1, the covering of pixel defining layer 150 is located at auxiliary on 130 side wall of bulge-structure in a wherein example
Electrode layer 140 is helped, i.e., the second opening 152 just exposes the auxiliary electrode layer 140 being located on 130 upper surface of bulge-structure.In this way,
The problem of can be avoided point discharge.
As shown in Figure 1, the size of the second opening of pixel defining layer is gradually along on the direction of the auxiliary electrode layer
Reduce, the deposition convenient for transparent top electrode layer 170 is formed.In a wherein example, pixel defining layer 150 with a thickness of
800nm~3000nm.In a wherein example, the side wall of the second opening 152 and the angle of substrate 110 are 60 °~80 °.Folder
Angle is excessive, transparent top electrode layer 170 deposited on inclined-plane it is partially thin, or even disconnect；Angle is too small, then influences the second opening 152
Aperture opening ratio.
Luminescent layer 160 is located in the first opening 151 of pixel defining layer 150, is arranged on emission electrode layer.Luminescent layer
160 can be organic luminous layer 160, quantum dot light emitting layer 160 or organic, quantum dot hybrid illuminating layer 160.
In a wherein example, display device 100 further includes the hole between luminescent layer 160 and emission electrode layer
Implanted layer, hole transmission layer, one or more layers in electronic barrier layer.In a wherein example, top emission type electroluminescent
Display device 100 further include hole blocking layer between luminescent layer 160 and transparent top electrode layer 170, exciton confining layers and
One or more layers in electron transfer layer.
Transparent top electrode layer 170 is hyaline layer, is integrally covered in auxiliary electrode layer 140, pixel defining layer 150 and shines
On layer 160,152 connect with auxiliary electrode layer 140 by the second opening of pixel defining layer 150, so with the drive on substrate 110
Dynamic circuit 112 connects.
In a wherein example, the height of bulge-structure 130 is 200nm~500nm, the thickness of auxiliary electrode layer 140
For 100nm~300nm, pixel defining layer 150 with a thickness of 800nm~3000nm.
Further, the utility model also provides a kind of display device comprising encapsulating structure and any of the above-described example
Display device, encapsulating structure be arranged on display device 100.
Aforementioned display device part 100 and display device, by the way that bulge-structure 130 is arranged on substrate 110, by auxiliary electrode layer
140 " padded ", the second 152 tops of opening that 140 range pixel of auxiliary electrode layer defines layer 150 are closer, in this way, can increase
The contact area of bright top electrode layer 170 and auxiliary electrode layer 140, and then improve transparent top electrode layer 170 and driving circuit 112
Connection effect.
In addition, the auxiliary electrode opening bevel gradient is larger in traditional display device, deposition forms top transparent electrode
When, deposition thickness of the top transparent electrode in the opening is relatively thin, and electrode sheet resistance is larger, and voltage drop is still more serious, unfavorable
It is further increased in the uniformity of luminance of display.
The surface slope of aforementioned display device part 100 and display device, the second opening 152 of pixel defining layer 150 can be made
It is smaller, be conducive to increase transparent top electrode layer 170 in the deposition thickness on the inclined-plane of the second opening 152, reduce transparent top electrode layer
170 sheet resistances are conducive to further increasing for the uniformity of luminance of display.
Below by taking a kind of production method of one of them more specific exemplary display device as an example, to the utility model
It is described further.
Referring to Fig. 2, one of them more specific exemplary display device, one of production method includes following step
It is rapid:
Step S1 provides glass substrate 110, and tft array driving circuit 112 is made on substrate 110, for driving electricity
To there is photoluminescence pixel unit 110 surface of substrate of driving tft array driving circuit 112 to be divided into luminous zone and non-light-emitting area.
Step S2 makes bulge-structure 130, the bulge-structure 130 in the non-light-emitting area of substrate 110 as shown in a in Fig. 2
By tft array driving circuit 112, but the source-drain electrode of TFT is not covered.Bulge-structure 130 is by forming photoresist
It is lithographically formed after layer, the trapezoidal and one end size close to substrate 110 in longitudinal section is larger.Bulge-structure 130 has upper table
Face and side wall, side of the bulge-structure 130 far from substrate 110 is plane, i.e., the upper surface of bulge-structure 130 is plane, protrusion
The height of structure 130 is 350nm.
Step S3, as shown in b in Fig. 2, the luminous zone on substrate 110 deposits emission electrode layer, the emission electrode conduct
Common electrode deposits auxiliary electrode layer 140 on the surface of bulge-structure 130, auxiliary electrode layer 140 passes through connection at the same time
Via hole is electrically connected with the source-drain electrode of TFT.Auxiliary electrode layer 140 with a thickness of 200nm.Emission electrode layer and auxiliary electrode layer
140 deposit to be formed but not contacted simultaneously, have high conductivity, material is identical, is Ag layers.
Step S4 makes pixel defining layer 150 as shown in c in Fig. 2, and pixel defining layer 150 has for exposing reflection electricity
First opening 151 of pole layer 120, and the second opening 152 for exposing auxiliary electrode layer 140.With 130 phase of bulge-structure
Together, pixel defining layer 150 form photoresist layer after be lithographically formed.With far from substrate 110, pixel defining layer 150
The size of first opening 151 is gradually increased.With far from substrate 110, the size of the second opening 152 of pixel defining layer 150 is gradually
Increase.Pixel defining layer 150 with a thickness of 2000nm.
As shown in d in Fig. 2, the second opening 152 of pixel defining layer 150 will just be located at the separate base of bulge-structure 130
Auxiliary electrode layer 140 on the side of plate 110 is completely exposed.
Step S5, multiple function layers are printed into the first opening 151 of pixel defining layer 150, and multiple function layers include sky
Cave implanted layer, hole transmission layer, electronic barrier layer, luminescent layer 160, hole blocking layer, exciton confining layers and electron transfer layer.It adopts
With printing technology, simple process and low cost.
Step S6 deposits transparent transparent top electrode in auxiliary electrode layer 140, pixel defining layer 150 and luminescent layer 160
Layer 170.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it cannot be understood as the limitations to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (10)
1. a kind of display device, which is characterized in that including substrate, reflection electrode layer, bulge-structure, auxiliary electrode layer, pixel circle
Given layer, luminescent layer and transparent top electrode layer；
The substrate has driving circuit, and on the substrate, the auxiliary electrode layer is covered in institute for the bulge-structure setting
It states on bulge-structure and is electrically connected with the driving circuit, the pixel defining layer setting is on the substrate and described in covering
Auxiliary electrode layer, the pixel defining layer have the first opening for being through to the substrate and are through to the auxiliary electrode layer
Second opening, second opening at least exposed portion are located at the auxiliary electrode layer on the bulge-structure upper surface, institute
Reflection electrode layer is stated on the substrate and is located in first opening, the luminescent layer is arranged in the reflection electrode layer
On, the transparent top electrode layer is integrally covered on the auxiliary electrode layer, the pixel defining layer and the luminescent layer.
2. display device as described in claim 1, which is characterized in that along the direction far from the substrate, the protrusion knot
The width of structure is gradually reduced.
3. display device as claimed in claim 2, which is characterized in that the angle of the side wall of the bulge-structure and the substrate
It is 45 °~70 °.
4. display device as described in claim 1, which is characterized in that the side far from the substrate of the bulge-structure is
Plane.
5. display device as described in claim 1, which is characterized in that the height of the bulge-structure is 200nm~500nm,
The auxiliary electrode layer with a thickness of 100nm~300nm, the pixel defining layer with a thickness of 800nm~3000nm.
6. display device as described in claim 1, which is characterized in that the pixel defining layer covering is located at the bulge-structure
The auxiliary electrode layer on side wall.
7. display device as described in claim 1, which is characterized in that the reflection electrode layer is public electrode.
8. display device as described in claim 1, which is characterized in that the auxiliary electrode layer is aluminium layer, aluminium-containing alloy layer, silver
Layer contains ag alloy layer or ITO/Ag/ITO lamination.
9. display device as described in any one of claims 1 to 8, which is characterized in that along the side close to the auxiliary electrode layer
Upwards, the size of the second opening of the pixel defining layer is gradually reduced, the side wall of second opening and the folder of the substrate
Angle is 60 °~80 °.
10. a kind of display device, which is characterized in that including encapsulating structure and display as described in any one of claims 1 to 9
Device, the encapsulating structure are arranged on the display device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920353436.7U CN209571417U (en) | 2019-03-20 | 2019-03-20 | Display device and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920353436.7U CN209571417U (en) | 2019-03-20 | 2019-03-20 | Display device and display device |
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| CN209571417U true CN209571417U (en) | 2019-11-01 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110808269A (en) * | 2019-11-08 | 2020-02-18 | 京东方科技集团股份有限公司 | Display device, display panel and preparation method thereof |
| CN110828525A (en) * | 2019-11-20 | 2020-02-21 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof, display panel and display device |
| CN113224110A (en) * | 2020-06-30 | 2021-08-06 | 广东聚华印刷显示技术有限公司 | Display substrate, display panel and preparation method thereof |
| CN114050174A (en) * | 2021-10-26 | 2022-02-15 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and electronic equipment |
| CN114420859A (en) * | 2021-11-29 | 2022-04-29 | 京东方科技集团股份有限公司 | Display substrate, display device and preparation method of display substrate |
-
2019
- 2019-03-20 CN CN201920353436.7U patent/CN209571417U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110808269A (en) * | 2019-11-08 | 2020-02-18 | 京东方科技集团股份有限公司 | Display device, display panel and preparation method thereof |
| CN110828525A (en) * | 2019-11-20 | 2020-02-21 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof, display panel and display device |
| CN113224110A (en) * | 2020-06-30 | 2021-08-06 | 广东聚华印刷显示技术有限公司 | Display substrate, display panel and preparation method thereof |
| CN114050174A (en) * | 2021-10-26 | 2022-02-15 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and electronic equipment |
| CN114050174B (en) * | 2021-10-26 | 2023-05-05 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and electronic equipment |
| CN114420859A (en) * | 2021-11-29 | 2022-04-29 | 京东方科技集团股份有限公司 | Display substrate, display device and preparation method of display substrate |
| CN114420859B (en) * | 2021-11-29 | 2024-03-12 | 京东方科技集团股份有限公司 | Display substrate, display device and preparation method of display substrate |
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