CN108364976A - Top emitting display panel, display device and preparation method thereof - Google Patents
Top emitting display panel, display device and preparation method thereof Download PDFInfo
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- CN108364976A CN108364976A CN201710875624.1A CN201710875624A CN108364976A CN 108364976 A CN108364976 A CN 108364976A CN 201710875624 A CN201710875624 A CN 201710875624A CN 108364976 A CN108364976 A CN 108364976A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
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Abstract
The present invention relates to a kind of top emitting display panels, display device and preparation method thereof.The top emitting display panel includes substrate, the reflection hearth electrode on substrate and the pixel defining layer with driving tft array, defines the light emitting functional layer between layer and the transparent top electrode in pixel defining layer and light emitting functional layer positioned at adjacent pixel, wherein pixel defining layer connects hole equipped with electricity, and transparent top electrode connects hole direct conduction by the electricity with driving tft array and connects.The top emitting display panel is significantly reduced electric current injection path, significantly improves the electric conductivity of transparent top electrode, can then effectively eliminate voltage drop caused by transparent top electrode electric conductivity deficiency, can significantly improve display panel and the uniformity of luminance of display device.
Description
Technical field
The present invention relates to display technology fields, more particularly to a kind of top emitting display panel, display device and its making
Method.
Background technology
In the present age of information-intensive society, the importance of the display device as visual information transmission medium is further strengthening.
In order to occupy leading position in future, display device is just towards lighter, thinner, more low energy consumption, more inexpensive and more preferable image
The trend development of quality.
Wherein, aperture opening ratio of the top emissive displays part since bigger can be obtained, it has also become the hot spot of recent researches.
But transmitance of traditional top emitting part due to needing increase light, the thickness of transparent top electrode is generally relatively thin, leads to electrode side
Hinder larger, electric conductivity is insufficient, and voltage drop is serious, easily causes the non-uniform light phenomenon of part.
Invention content
Based on this, it is necessary to provide a kind of top emitting display panel that can improve uniformity of luminance, display device and its
Production method.
A kind of top emitting display panel, including
Substrate with driving tft array；
Hearth electrode is reflected, the reflection hearth electrode is set on the substrate；
Pixel defining layer, the pixel defining layer be set to the substrate on and between the adjacent reflection hearth electrode with
Light-emitting zone for limiting adjacent subpixels unit, the pixel defining layer connect hole equipped with electricity；
Light emitting functional layer, the light emitting functional layer include at least luminescent layer, and the light emitting functional layer is set to the reflection bottom
On electrode and between the adjacent pixel defining layer；
Transparent top electrode, the transparent top electrode is set in the pixel defining layer and the luminous work(functional layer, and institute
It states transparent top electrode hole is connect by the electricity and connect with the driving tft array.
The top emitting display panel further includes insulated column in one of the embodiments,；
The insulated column is set in the pixel defining layer described on the adjacent sub-pixel unit for separating
Bright top electrode, and the transparent top electrode in each sub-pixel unit connects hole and the driving by the electricity
Tft array connects.
The top emitting display panel further includes flatness layer in one of the embodiments, and the flatness layer is set to described
Between substrate and the reflection hearth electrode.
The light emitting functional layer is organic electroluminescent functional layer, quantum dot light emitting function in one of the embodiments,
Layer or organic electroluminescent functional layer and quantum dot light emitting functional layer are formed by mixed luminescence functional layer.
The light emitting functional layer includes the hole injection layer being cascading, hole biography in one of the embodiments,
Defeated layer, electronic barrier layer, the luminescent layer, hole blocking layer, exciton confining layers and electron injecting layer.
The cross section that the electricity connects hole in one of the embodiments, is in inverted trapezoidal.
The material of the reflection hearth electrode is aluminium, silver, aluminium alloy or silver alloy in one of the embodiments,.
A kind of display device, which is characterized in that including the top emitting display panel described in any of the above-described embodiment.
A kind of production method of top emitting display panel described above, includes the following steps：
There is provided has the substrate of driving tft array；
Reflection hearth electrode is made on the substrate；
Pixel defining layer is made between the adjacent reflection hearth electrode on the substrate, in the pixel defining layer
It opens up electricity and connects hole；
Light emitting functional layer is formed between the adjacent pixel defining layer；
The transparent top electrode is made in the pixel defining layer and the light emitting functional layer, and makes the transparent top electricity
Pole connects hole by the electricity and is connect with the driving tft array.
The transparent top is being made in the pixel defining layer and the light emitting functional layer in one of the embodiments,
Further include being made in the pixel defining layer for separating the transparent top on adjacent subpixels unit before electrode step
The insulated column of electrode.
Above-mentioned top emitting display panel include with the driving substrate of tft array, the reflection hearth electrode on substrate and
Pixel defining layer defines the light emitting functional layer between layer positioned at adjacent pixel and is located in pixel defining layer and light emitting functional layer
Transparent top electrode, wherein pixel defining layer connects hole equipped with electricity, and transparent top electrode and driving tft array meet Kong Zhi by the electricity
It connects and is conductively connected, be significantly reduced electric current injection path, significantly improve the electric conductivity of transparent top electrode, can then effectively eliminate
Voltage drop caused by transparent top electrode electric conductivity deficiency, can significantly improve the uniformity of luminance of display panel.
Further, above-mentioned top emitting display panel separates phase by the way that insulated column, insulated column are arranged in pixel defining layer
The transparent top electrode of adjacent sub-pixel unit simultaneously makes to be formed in each sub-pixel unit and drives tft array direct separate conductive one by one
The transparent top electrode unit of connection, can further effectively reduce electric current injection path, to effectively eliminate transparent top electrode because
Voltage drop caused by electric conductivity deficiency, and then improve the non-uniform light of display panel and display device.
Traditional top emitting display panel improves transparent top electrode by the auxiliary electrode being arranged in pixel defining layer
Electric conductivity, but since auxiliary electrode is usually opaque, can not be produced on light-emitting zone, reduce the electricity of transparent top electrode
The ability of pressure drop is limited, and needs to introduce additional making technology, increases cost of manufacture.With traditionally carried using auxiliary electrode
The electric conductivity of high transparency top electrode is compared with the top emitting display panel of show uniformity, the making of above-mentioned top emitting display panel
In method, due to the setting of insulated column in pixel defining layer, when making transparent top electrode, made without height fine
Mask (mask plate) contraposition depositions, make only with the opening mask of low cost, whole without introducing additional making technology
Cost of manufacture can be reduced on body.
Description of the drawings
Fig. 1 is the overall structure diagram of the top emitting display panel of an embodiment；
Fig. 2 is the structure schematic diagram of the top emitting display panel in Fig. 1；
Fig. 3 is the step flow diagram of the production method of the top emitting display panel in Fig. 2；
Fig. 4 be Fig. 3 top emitting display panel production method in formed Fig. 1 top emitting display panel driving TFT
The structural schematic diagram of array and flatness layer；
The reflection bottom of top emitting display panels of the Fig. 5 to form Fig. 1 in the production method of the top emitting display panel of Fig. 3 is electric
The structural schematic diagram of pole；
The pixel of top emitting display panels of the Fig. 6 to form Fig. 1 in the production method of the top emitting display panel of Fig. 3 defines
The structural schematic diagram of layer；
Fig. 7 is the insulated column of the top emitting display panel of formation Fig. 1 in the production method of the top emitting display panel of Fig. 3
Structural schematic diagram.
Specific implementation mode
To facilitate the understanding of the present invention, below with reference to relevant drawings to invention is more fully described.In attached drawing
Give presently preferred embodiments of the present invention.But the present invention can realize in many different forms, however it is not limited to this paper institutes
The embodiment of description.Keep the understanding to the disclosure more thorough on the contrary, purpose of providing these embodiments is
Comprehensively.
It should be noted that when element is referred to as " being set to " another element, it can directly on another element or
There may also be elements placed in the middle by person.When an element is considered as " connection " another element, it can be directly to
Another element may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the Listed Items of pass.
It please refers to Fig.1 and Fig. 2, the top emitting display panel 10 of an embodiment, including substrate 100, driving tft array
210, flatness layer 220, reflection hearth electrode 230, pixel defining layer 240, insulated column 241, light emitting functional layer 250 and transparent top electrode
260。
In the present embodiment, there is driving tft array on substrate 100, for driving light emitting component, realize that image is aobvious
Show.Wherein, substrate 100 can be rigid substrates or flexible base board.Rigid substrates can be ceramic material or all kinds of glass materials
Deng.Flexible base board can be Kapton (PI) and its derivative, polyethylene naphthalate (PEN), phosphoenol
Formula pyruvic acid (PEP) or diphenylene ether resin etc..It may include non-crystalline silicon tft array, polycrystalline tft array to drive tft array
And metal oxide tft array etc..
In embodiments, it is preferable that flatness layer 220 is set on substrate 100, and the flatness layer 220 of passivation is used for flat drive
The uneven surface generated when the dynamic making of tft array 210 and the protection driving tft array 210 when subsequently making other structures
Be not damaged damage.Flatness layer 220 has the connection for making driving tft array 210 be connected with transparent top electrode 260 simultaneously
Hole.
In the present embodiment, reflection hearth electrode 230 is set on the flatness layer 220 of substrate 100, and in patterning.Reflection
The material of hearth electrode 230, which is aluminium, silver, aluminium alloy or silver alloy etc., has high-conductivity metal material, preferable using electric conductivity
It reflects hearth electrode 230 and acts on common electrode, electric current can be effectively reduced and be injected into display panel from real display panel edge
Between voltage drop, so as to reduce because reflect the voltage drop caused by electric conductivity deficiency of hearth electrode 230, avoid non-uniform light
The phenomenon that.
Further, the high-conductivity metal material of reflection hearth electrode 230 can also fill in the connecting hole of flatness layer 220
So that transparent top electrode 260 is connect with driving tft array 210 by high conductivity material, reduces manufacturing process.In other embodiment party
In formula, transparent top electrode 260 can also connect the connecting hole on hole and flatness layer 220 directly through the electricity in pixel defining layer 240
It is connect with driving tft array 210, is further reduced the voltage drop of transparent top electrode 260, improve uniformity of luminance.
In the present embodiment, pixel defining layer 240 is set on the flatness layer 220 of substrate 100, and is located at adjacent reflection
Between hearth electrode 230, adjacent pixel defines layer 240 and reflection hearth electrode 230 surrounds in pixel hole for the adjacent son of restriction
The light-emitting zone of pixel unit 200.Preferably, the marginal position of the covering of pixel defining layer 240 reflection hearth electrode 230.
Pixel defining layer 240 connects hole equipped with electricity, the electricity connect hole for make transparent top electrode 260 directly with driving TFT gusts
Row 210 connect.Transparent top electrode 260 connects hole direct conduction by the electricity with driving tft array 210 and connects, and is significantly reduced electricity
Stream injection path, significantly improves the electric conductivity of transparent top electrode 260, can then effectively eliminate 260 electric conductivity of transparent top electrode
Voltage drop caused by deficiency can significantly improve the uniformity of luminance of display panel.
Preferably, the cross section that electricity connects hole is in inverted trapezoidal, in order to which transparent top electrode 260 connects sinking on the inner wall in hole in electricity
Product thickness, to ensure the conductive effect of transparent top electrode 260.
Further, pixel defining layer 240 is equipped with insulated column 241.Insulated column 241 be set to pixel defining layer 240 on
For separating the transparent top electrode 260 on adjacent subpixels unit 200, and make the transparent top electricity in each sub-pixel unit 200
Pole 260 connects hole by electricity and is independently connected with driving tft array 210, to realize the electricity of the transparent top in each sub-pixel unit 200
Pole 260 independently drives the luminescence display in the sub-pixel unit 200, can further effectively reduce electric current injection path, to
The voltage drop caused by electric conductivity deficiency of transparent top electrode 260 is effectively eliminated, and then improves the hair of display panel and display device
Light inhomogeneities.
Preferably, the cross section of insulated column 241 can trapezoidal, rectangle etc., as long as convenient for make and can ensure every
It can effectively separate transparent top electrode 260 from column 241.
In the present embodiment, light emitting functional layer 250 is set in pixel hole.Light emitting functional layer 250 includes at least luminescent layer
(light-emitting layer).Preferably, light emitting functional layer is organic electroluminescent functional layer, including the hole injection being cascading
Layer, hole transmission layer, electronic barrier layer, luminescent layer, hole blocking layer, exciton confining layers and electron injecting layer.In addition, Organic Electricity
Photoluminescence functional layer can also include hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, exciton confining layers
With one or more layers in electron injecting layer.In other embodiments, light emitting functional layer 250 can also be quantum dot light emitting work(
Ergosphere or organic electroluminescent functional layer and quantum dot light emitting functional layer are formed by mixed luminescence functional layer.
In the present embodiment, transparent top electrode 260 is set in pixel defining layer 240 and luminous work(functional layer 250, and thoroughly
Bright top electrode 260 by electricity connect hole with driving tft array 210 connect, due to the transparent top electrode 260 directly with drive TFT gusts
Row 210 connect, and can effectively be significantly reduced electric current injection path, significantly improve the electric conductivity of transparent top electrode 260, then can
Voltage drop caused by 260 electric conductivity deficiency of transparent top electrode is enough effectively eliminated, the luminous uniform of display panel is can significantly improve
Property.Transparent top electrode 260 can be that the materials such as ITO, IZO, AZO make the metal conductive oxide film layer to be formed, or
The materials such as graphene, conducting polymer make the organic conductive film layer to be formed.
In addition, the sub-pixel unit 200 on substrate 100 can be red light-emitting area, green light-emitting area, blue-light-emitting
Region and/or white luminous region.It is appreciated that the light-emitting zone of multiple same colors can effectively be subtracted with concentrated setting
The area of few each sub-pixel unit 200, and then improve the resolution ratio of display panel and display device.
Further referring to Fig. 3, the production method 20 of the top emitting display panel 10 of present embodiment, including walk as follows
Suddenly：
S1 provides the substrate 100 with driving tft array 210, and make and be used for flat driving please further combined with Fig. 4
The flatness layer 220 of tft array 210 is preserved on flatness layer 220 that transparent top electrode 260 is made with driving tft array 210 to be connected
The connecting hole connect.
S2, please further combined with Fig. 5, deposition forms patterned reflection hearth electrode on the flatness layer 220 of substrate 100
230, and simultaneously in connecting hole and the top of connecting hole makes conduction region for connecting transparent top electrode 260.
S3 makes pixel defining layer 240, in pixel defining layer 240 on the substrate 100 between neighboring reflection hearth electrode 230
On open up electricity and connect hole.
S4 makes in pixel defining layer 240 for separating the transparent top electrode 260 on adjacent subpixels unit 200
Insulated column 241.Transparent top electrode 260 is separated into independent electrode one by one by the insulated column 241 in pixel defining layer 240
Unit, to realize the independent Active control to each sub-pixel unit.
S5 forms light emitting functional layer 250, and each son using printing technology in the pixel hole that pixel defining layer 240 surrounds
The electricity of pixel unit connects hole and is distributed in the region that insulated column 241 surrounds one by one.Light emitting functional layer 250 is prepared using printing technology,
It can be accurately controlled in film forming in pixel hole, pixel defining layer 240 is powered on when preventing using evaporation process preparation and connects hole
Blocking, avoiding electricity from connecing hole plug causes transparent top electrode 260 can not be with driving tft array situation about can not be connected.
S6 makes transparent top electrode 260 using opening mask in pixel defining layer 240 and light emitting functional layer 250, and makes
Transparent top electrode 260 connects hole by electricity and is connect with driving tft array 210.
S7 is packaged entire display panel.
In the production method 20 of the top emitting display panel of present embodiment, due to insulated column 241 in pixel defining layer 240
Setting, when making transparent top electrode, without height make fine mask align deposition, only with low cost opening
Mask makes, and without introducing additional making technology, can reduce cost of manufacture on the whole.
A kind of display device includes the top emitting display panel of any of the above-described embodiment.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of top emitting display panel, which is characterized in that including
Substrate with driving tft array；
Hearth electrode is reflected, the reflection hearth electrode is set on the substrate；
Pixel defining layer, the pixel defining layer be set to the substrate on and between the adjacent reflection hearth electrode for
The light-emitting zone of adjacent subpixels unit is limited, the pixel defining layer connects hole equipped with electricity；
Light emitting functional layer, the light emitting functional layer include at least luminescent layer, and the light emitting functional layer is set to the reflection hearth electrode
It goes up and is located between the adjacent pixel defining layer；
Transparent top electrode, the transparent top electrode are set in the pixel defining layer and the luminous work(functional layer, and described
Bright top electrode connects hole by the electricity and is connect with the driving tft array.
2. top emitting display panel according to claim 1, which is characterized in that further include insulated column；
The insulated column is set in the pixel defining layer the transparent top separated on the adjacent sub-pixel unit
Electrode, and the transparent top electrode in each sub-pixel unit connects hole and the driving TFT by the electricity
Array connects.
3. top emitting display panel according to claim 1 or 2, which is characterized in that further include flatness layer, the flatness layer
Between the substrate and the reflection hearth electrode.
4. top emitting display panel according to claim 1 or 2, which is characterized in that the light emitting functional layer is Organic Electricity
Photoluminescence functional layer, quantum dot light emitting functional layer or organic electroluminescent functional layer and quantum dot light emitting functional layer are formed by mixed
Close light emitting functional layer.
5. top emitting display panel according to claim 4, which is characterized in that the light emitting functional layer includes stacking gradually
Hole injection layer, hole transmission layer, electronic barrier layer, the luminescent layer, hole blocking layer, exciton confining layers and the electronics of setting
Implanted layer.
6. top emitting display panel according to claim 1 or 2, which is characterized in that the electricity connects the cross section in hole in
It is trapezoidal.
7. top emitting display panel according to any one of claims 1 to 3, which is characterized in that the reflection hearth electrode
Material is aluminium, silver, aluminium alloy or silver alloy.
8. a kind of display device, which is characterized in that including claim 1 to 8 any one of them top emitting display panel.
9. a kind of production method of top emitting display panel, which is characterized in that include the following steps：
There is provided has the substrate of driving tft array；
Reflection hearth electrode is made on the substrate；
Pixel defining layer is made between the adjacent reflection hearth electrode on the substrate, is opened up in the pixel defining layer
Electricity connects hole；
Light emitting functional layer is formed between the adjacent pixel defining layer；
The transparent top electrode is made in the pixel defining layer and the light emitting functional layer, and keeps the transparent top electrode logical
It crosses the electricity and connects hole and connect with the driving tft array.
10. the production method of top emitting display panel according to claim 9, which is characterized in that in pixel circle
Further include being made in the pixel defining layer before making the transparent top electrode step in given layer and the light emitting functional layer
Insulated column for separating the transparent top electrode on adjacent subpixels unit.
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| CN111146260B (en) * | 2019-12-31 | 2024-04-05 | 广东聚华印刷显示技术有限公司 | Display panel structure, manufacturing method thereof and display panel |
| CN112701148A (en) * | 2020-12-28 | 2021-04-23 | 广东聚华印刷显示技术有限公司 | Top emission display panel, display device and manufacturing method thereof |
| CN112701148B (en) * | 2020-12-28 | 2024-04-30 | 广东聚华印刷显示技术有限公司 | Top emission display panel, display device and manufacturing method thereof |
| US12127421B2 (en) | 2023-03-20 | 2024-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of a two-layer via structure to mitigate damage to a display device |
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