CN208570612U - Dot structure and transparence display device - Google Patents
Dot structure and transparence display device Download PDFInfo
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- CN208570612U CN208570612U CN201820649117.6U CN201820649117U CN208570612U CN 208570612 U CN208570612 U CN 208570612U CN 201820649117 U CN201820649117 U CN 201820649117U CN 208570612 U CN208570612 U CN 208570612U
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Abstract
The utility model relates to a kind of dot structure and transparence display devices.The dot structure includes multiple pixel units, and each pixel unit includes the sub-pixel of multiple color, and each pixel unit includes: substrate；First pixel defining layer, it is set on substrate, the first pixel defining layer offers ink dislodger, and adjacent same sub-pixels are located in same ink dislodger, adjacent heterochromatic sub-pixel is isolated by the first pixel defining layer, and ink dislodger includes transparent area and the luminous zone positioned at transparent area periphery；And second pixel defining layer, it is set to transparent area, the second pixel defining layer is transparent, and is lyophoby pixel defining layer, the thickness of the thickness of the second pixel defining layer less than the first pixel defining layer.The ink dislodger of above-mentioned dot structure is larger, can prepare that resolution ratio is higher and the preferable transparence display device of translucency.
Description
Technical field
The utility model relates to field of display technology, more particularly to a kind of dot structure and transparence display device.
Background technique
Transparence display is a kind of completely new display technology, and observer can be allowed to see display screen rear through display screen
Background can be used in the neck such as mobile phone, computer, refrigerator, displaying and billboard to bring a kind of completely new man-machine interaction experience
Domain.
Organic electroluminescent LED (OLED) and light emitting diode with quantum dots (QLED) all have lightweight and thin feature,
And become the important directions of current transparent display panel development.Solution processing technology is because of its low cost, high production capacity and is easily achieved
The advantages that large scale, becomes the main method of production OLED and QLED.Wherein, printing technology is considered as realizing OLED and QLED
Low cost and the full-color display of large area most effective approach.
But realize that the high-resolution of display panel needs to guarantee that the deposition region of ink is larger by printing technology.One
The sub-pixel of same color is placed in same ink crystallizing field by a little researchs, to expand ink crystallizing field.However for transparent
It has been shown that, sub-pixel includes luminous zone and transparent area, and the setting unit of transparent area occupies original luminous zone, reduces luminous zone
Size, to reduce the deposition region of ink, therefore transparence display is still remained because transparent area setting leads to ink
The problem of crystallizing field reduces.
Utility model content
Based on this, it is necessary to a kind of dot structure and transparence display device be provided, the ink dislodger of the dot structure compared with
Greatly, it can prepare that resolution ratio is higher and the preferable transparence display device of translucency.
A kind of dot structure based on transparent display panel, including multiple pixel units, each pixel unit include
The sub-pixel of multiple color, which is characterized in that each pixel unit includes:
Substrate；
First pixel defining layer is set on the substrate, and first pixel defining layer offers ink dislodger, phase
Adjacent same sub-pixels are located in the same ink dislodger, adjacent heterochromatic sub-pixel by first pixel defining layer every
From the ink dislodger includes transparent area and the luminous zone positioned at the transparent area periphery；And
Second pixel defining layer, is set to the transparent area, second pixel defining layer be it is transparent, and described second
Pixel defining layer is lyophoby pixel defining layer, and the thickness of second pixel defining layer is less than the thickness of first pixel defining layer
Degree.
First pixel defining layer of above-mentioned dot structure opens up ink dislodger, and adjacent same sub-pixels are located in same
In a ink dislodger, so that the ink of adjacent same sub-pixels deposits in same ink dislodger, to expand
The deposition region of ink, so that can be by the size of single sub-pixel in the single ink dislodger of reduction, with preparation point
The higher transparent display panel of resolution, ink dislodger includes transparent area and the luminous zone for being located at transparent area periphery, so that being located at
Adjacent same sub-pixels in same ink dislodger can share transparent area, to guarantee the display including above-mentioned dot structure
The translucency of part, meanwhile, so that luminous zone and transparent area can deposited ink and the deposition region of ink is collectively formed, thus
Expand the deposition region of ink, since the second pixel defining layer is set to transparent area, and the thickness of the second pixel defining layer is less than
The thickness of first pixel defining layer advantageously ensures that the translucency of transparent area, and since the second pixel defining layer is lyophoby pixel
Layer is defined, in printing process, so that the ink for being deposited on the second pixel defining layer surface can not be in the second pixel when dry
It defines layer surface pinning and bounces back to luminous zone, thus will not be in the surface deposition film of the second pixel defining layer, and then improve
The translucency of transparent area.The ink dislodger of above-mentioned dot structure is larger, can prepare that resolution ratio is higher and translucency is preferable
Transparence display device.
In one of the embodiments, first pixel defining layer with a thickness of 800nm~1500nm, second picture
Element define layer with a thickness of 100nm~250nm.
First pixel defining layer is lyophoby pixel defining layer, second pixel circle in one of the embodiments,
The contact angle of given layer is greater than 110 °.
First pixel defining layer is hydrophobicity photoresist layer in one of the embodiments,；And/or
Second pixel defining layer is hydrophobicity photoresist layer.
The ratio between width of the width of the luminous zone and the transparent area is 2:1~1:2 in one of the embodiments.
The width of the transparent area is 50 μm~120 μm in one of the embodiments,.
It in one of the embodiments, include reflecting electrode, the reflecting electrode is set on the substrate, and is located at institute
State luminous zone.
First pixel defining layer part covers the described of the adjacent heterochromatic sub-pixel in one of the embodiments,
Reflecting electrode；And/or
Second pixel defining layer part covers the reflecting electrode of the adjacent same sub-pixels.
It in one of the embodiments, further include light emitting functional layer, the light emitting functional layer is set to the reflecting electrode
On, and be located in the luminous zone.
The light emitting functional layer includes hole injection layer, hole transmission layer, electronic blocking in one of the embodiments,
At least one layer of and luminescent layer in layer, hole blocking layer, exciton confining layers, electron transfer layer and electron injecting layer.
It in one of the embodiments, further include transparent electrode, the transparent electrode is covered in the light emitting functional layer
Surface and the surface of second pixel defining layer.
A kind of transparence display device, including the described in any item dot structures of above-described embodiment.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the dot structure based on transparent display panel of an embodiment；
Fig. 2 is cross-sectional view of the dot structure shown in FIG. 1 along I-I' line；
Fig. 3 is the flow chart of dot structure preparation method shown in FIG. 1；
Fig. 4 is the production structure chart of reflecting electrode in the manufacturing process of dot structure shown in Fig. 2；
Fig. 5 is the system of the first pixel defining layer and the second pixel defining layer in the manufacturing process of dot structure shown in Fig. 2
Make structure chart；
Fig. 6 is the production structure chart of light emitting functional layer in the manufacturing process of dot structure shown in Fig. 2.
Specific embodiment
The utility model is more fully retouched below with reference to relevant drawings for the ease of understanding the utility model,
It states.The preferred embodiment of the utility model is given in attached drawing.But the utility model can come in many different forms
It realizes, however it is not limited to embodiment described herein.On the contrary, purpose of providing these embodiments is makes to the utility model
The understanding of disclosure is more thorough and comprehensive.
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement are for illustrative purposes only.
Unless otherwise defined, all technical and scientific terms used herein are led with the technology for belonging to the utility model
The normally understood meaning of the technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.
As shown in Figure 1, the dot structure 10 of an embodiment includes multiple pixel units 100, each pixel unit 100 is wrapped
Include the sub-pixel of multiple color.Further, adjacent same sub-pixels concentrated setting.
In the embodiment shown in fig. 1, pixel unit 100 includes the first sub-pixel 102, the second sub-pixel 104 and third
Sub-pixel 106, the first sub-pixel 102, the second sub-pixel 104 and third sub-pixel 106 emit feux rouges, blue light and green light respectively.
The first sub-pixel 102, the second sub-pixel 104 and third sub-pixel 106 are two in Fig. 1, and two the first sub-pixels 102 are concentrated
Setting, two 104 concentrated settings of the second sub-pixel, two 106 concentrated settings of third sub-pixel.It will concentrate and set with sub-pixels
It sets, it can be by the area of the corresponding sub-pixel of reduction, to improve the resolution ratio of display device.
Referring to Figure 2 together, each pixel unit 100 includes substrate 110, the first pixel defining layer 120, the second pixel circle
Given layer 130, reflecting electrode 140, light emitting functional layer 150 and transparent electrode 160.
In a wherein embodiment, substrate 110 includes substrate (not shown), TFT drive array (not shown) and flat
Layer (not shown).Substrate is glass substrate or flexible base board.In a wherein embodiment, when substrate is flexible base board,
Substrate is polyimide flex substrate.TFT drive array is set to the surface of substrate, for driving light emitting component, with display
Image.Wherein, TFT drive array is non-crystalline silicon tft array, polycrystalline tft array or metal oxide tft array.When TFT drives
When array is metal oxide tft array, TFT drive array is indium gallium zinc oxide tft array.Further, flatness layer covers
It is placed on side of the TFT drive array far from substrate, flatness layer opens up connecting hole.
First pixel defining layer 120 is set on substrate 110.In the shown embodiment, the first pixel defining layer 120 is set
It is placed in the surface of flatness layer.
First pixel defining layer 120 offers ink dislodger 121, and ink dislodger 121 is used for deposited ink, to obtain
Light emitting functional layer 150.Light emitting functional layer 150 is made by setting different materials material, the sub- picture of different colours can be accessed
Element.Further, adjacent same sub-pixels are located in the same ink dislodger 121, are conducive to the crystallizing field for expanding ink
Domain, so as to improve the resolution ratio of display device by the area for reducing the sub-pixel in same ink dislodger 121.Its
In, it is the sub-pixel of same color with sub-pixels.
Further, adjacent heterochromatic sub-pixel is isolated by the first pixel defining layer 120.Wherein, heterochromatic sub-pixel is
The sub-pixel of different colours.
Ink dislodger 121 includes luminous zone 1211 and transparent area 1213, and luminous zone 1211 is located at the outer of transparent area 1213
It encloses.In a wherein embodiment, transparent area 1213 is located at the middle part of ink dislodger 121, luminous zone 1211 be it is multiple, it is more
A luminous zone 1211 is close to the setting of transparent area 1213.
In the shown embodiment, an ink dislodger 121 has a transparent area 1213 and two luminous zones 1211,
Transparent area 1213 is located between two luminous zones 1211, so that two are located at an ink dislodger 121 with sub-pixels, in turn
So that two share a transparent area 1213 with sub-pixels.
The first pixel defining layer 120 is lyophoby pixel defining layer in one of the embodiments,.At this point, the first pixel circle
Given layer 120 can be in lyophobicity for surface, i.e. the surface of the first pixel defining layer 120 handles by lyophoby and is in lyophobicity；The
One pixel defining layer 120 may be to be made by the material of lyophobicity.Wherein, lyophoby is lyophobicity, including hydrophobicity
And oleophobic property.
By setting lyophoby pixel defining layer for the first pixel defining layer 120, ink can be effectively inhibited first
Pinning on the surface of pixel defining layer 120, guarantees the uniformity of light emitting functional layer 150, and prevents ink spilling from causing colour mixture.Into
One step, the first pixel defining layer 120 is silicon dioxide layer, lyophobicity photoresist layer or polytetrafluoroethylene ethylene layer.
In one of the embodiments, the first pixel defining layer 120 with a thickness of 800nm~1500nm.By setting compared with
The first thick pixel defining layer 120, can prevent the ink in ink dislodger 121 from overflowing, and then avoid different colours ink
Between crosstalk.
The width of transparent area 1213 is 50 μm~120 μm in one of the embodiments,.
The ratio between width of width Yu transparent area 1213 of luminous zone 1211 is 2:1~1:2 in one of the embodiments,.
Second pixel defining layer 130 is set to transparent area 1213.In the shown embodiment, the second pixel defining layer 130
It is set to the surface of flatness layer, and is located at transparent area 1213, the luminous zone 1211 of adjacent same sub-pixels is isolated.
Thickness of the thickness of second pixel defining layer 130 less than the first pixel defining layer 120 in one of the embodiments,
Degree.Further, the first pixel defining layer 120 with a thickness of 800nm~1500nm, the second pixel defining layer 130 with a thickness of
100nm~250nm.
Since the second pixel defining layer 130 is set to transparent area 1213, the thickness of the second pixel defining layer 130 is less than first
The thickness of pixel defining layer 120 can guarantee the translucency of transparent area 1213, simultaneously as adjacent same sub-pixels are located at
In the same ink dislodger 121, also make luminous zone 1211 and transparent area 1213 can deposited ink and ink is collectively formed
The deposition region of water, to expand the deposition region of ink, and then can be by reducing single son in single ink dislodger 121
The area of pixel, to improve the resolution ratio of display device made of above-mentioned dot structure 10.
Further, the second pixel defining layer 130 is transparent, and the second pixel defining layer 130 is that lyophoby pixel defines
Layer.Due to the second pixel defining layer 130 be it is transparent, can guarantee the translucency of transparent area.Again due to the second pixel defining layer
130 be lyophoby pixel defining layer, in printing process, be deposited on the ink on 130 surface of the second pixel defining layer when dry without
Method bounces back to luminous zone 1211 in 130 surface pinning of the second pixel defining layer, so that cannot be in the second pixel defining layer
130 surface forms film, and then improves the translucency of transparent area 1213.
The contact angle on 130 surface of the second pixel defining layer is less than 110 ° in one of the embodiments,.At this point, the second picture
Element, which defines layer 130, to be surface lyophoby pixel defining layer, i.e., the surface of the second pixel defining layer 130 is handled by lyophoby, with
Make the contact on 130 surface of the second pixel defining layer less than 110 °；Second pixel defining layer 130 may be the material by lyophobicity
It is made.Wherein, contact angle refer to drop of liquid drop in the surface of solid, at this time air, liquid and solid formed air-liquid,
Gu three-phase, and make the tangent line of liquid-vapor interface, direction and solid-liquid of this tangent line in close liquid in gas, liquid, solid three-phase point of intersection
Angle between boundary line.
Specifically, the deionized water contact angle on 130 surface of the second pixel defining layer is less than 110 °.Wherein, deionized water connects
Feeler refers to the contact angle that a drop deionized water drop is measured in the surface of solid.Further, the second pixel defining layer 130 is two
Silicon oxide layer, lyophobicity photoresist layer or polytetrafluoroethylene ethylene layer.Preferably, the second pixel defining layer 130 is hydrophobicity photoresist
Material layer, and the first pixel defining layer 120 is hydrophobicity photoresist layer, is conducive to make the first pixel defining layer 120 and second
Pixel defining layer 130 can make in same processing procedure, to simplify manufacture craft.
Reflecting electrode 140 is set to the surface of substrate 110, and is located at luminous zone 1211.In the shown embodiment, it reflects
Electrode 140 is set to the surface of flatness layer, and is electrically connected by the connecting hole of flatness layer with TFT drive array.Due to reflection electricity
Pole 140 is located at luminous zone 1211, and the luminous zone 1211 of adjacent same sub-pixels is isolated transparent area 1213, so that adjacent same dice
The reflecting electrode 140 of pixel is isolated by transparent area 1213.
In a wherein embodiment, reflecting electrode 140 is that conducting reflective made of at least one of aluminium, silver and gold is thin
Film or the stacked conducting reflective film of ITO/Ag/ITO.Wherein, the stacked conducting reflective film of ITO/Ag/ITO indicates successively layer
The conducting reflective film that folded indium tin oxide layer, silver layer and indium tin oxide layer is constituted.
In a wherein embodiment, reflecting electrode 140 with a thickness of 40nm~200nm.
Further, reflecting electrode 140 is multiple, and multiple reflecting electrodes 140 are located at multiple luminous zones 1211, so that
The corresponding luminous zone 1211 of one reflecting electrode 140.In the shown embodiment, two reflecting electrodes with sub-pixels
140 are respectively arranged in two luminous zones 1211.
In a wherein embodiment, 120 part of the first pixel defining layer covers the reflection of adjacent heterochromatic sub-pixel
Electrode 140.
In a wherein embodiment, 130 part of the second pixel defining layer covers the reflection of adjacent same sub-pixels
Electrode 140.In the shown embodiment, the second pixel defining layer 130 covers the reflecting electrode 140 of adjacent same sub-pixels
The reflecting electrode 140 of adjacent same sub-pixels is isolated at edge.
In a wherein embodiment, 120 part of the first pixel defining layer covers the reflection of adjacent heterochromatic sub-pixel
Electrode 140, and 130 part of the second pixel defining layer covers the reflecting electrode 140 of adjacent same sub-pixels.
Light emitting functional layer 150 is set on reflecting electrode 140, and is located in luminous zone 1211.Wherein, different by setting
The ink of material makes light emitting functional layer 150, can access the sub-pixel of different colours.In the shown embodiment, it shines
Functional layer 150 is set to side of the reflecting electrode 140 far from flatness layer, and is located in luminous zone 1211.
Light emitting functional layer 150 is organic electroluminescent functional layer in one of the embodiments,.In illustrated embodiment
In, light emitting functional layer 150 is luminescent layer.Wherein, luminescent layer is organic light-emitting layer, quantum dot light emission layer or perovskite light hair
Penetrate layer.
In one of the embodiments, light emitting functional layer 150 with a thickness of 80nm~300nm.
Further, light emitting functional layer 150 is multiple, and multiple light emitting functional layers 150 are respectively arranged at multiple reflecting electrodes
It on 140, and is located in multiple luminous zones 1211, so that the surface of a reflecting electrode 140 covers a light emitting functional layer
150, and then obtain multiple sub-pixels.In the shown embodiment, the light emitting functional layer 150 of adjacent same sub-pixels is located at same
In one ink dislodger 121, so that adjacent same sub-pixels are located in the same ink dislodger 121.
Transparent electrode 160 is the light output mouth of the display panel made of above-mentioned dot structure 10.Transparent electrode 160 covers
In the surface of light emitting functional layer 150 and the surface of the second pixel defining layer 130.
In a wherein embodiment, transparent electrode 160 is covered in the surface of the first pixel defining layer 120, luminous function
The surface of ergosphere 150 and the surface of the second pixel defining layer 130.
Transparent electrode 160 is that transparent conductive metal sull, transparent conductive metal are thin in one of the embodiments,
Film, conductive graphene membrane or conductive carbon nanotube film.
In wherein embodiment party example, transparent electrode 160 with a thickness of 15nm~200nm.Wherein, work as transparent electrode
160 be transparent conductive metallic film when, transparent electrode 160 with a thickness of 5nm~30nm, to guarantee the light transmission of transparent electrode 160
Property.
The visible light transmittance of transparent electrode 160 is greater than 70% in one of the embodiments,.
The dot structure 10 of above embodiment has at least the following advantages:
(1) the first pixel defining layer 120 of above-mentioned dot structure 10 opens up ink dislodger 121, adjacent same dice picture
Element is located in the same ink dislodger 121, so that the ink of adjacent same sub-pixels is in same ink dislodger 121
Deposition, so that the deposition region of ink is expanded, so that can be by reducing single sub- picture in single ink dislodger 121
The size of element, to prepare the higher transparent display panel of resolution ratio, ink dislodger 121 is including transparent area 1213 and is located at light transmission
The luminous zone 1211 of 1213 periphery of area, enables the adjacent same sub-pixels being located in same ink dislodger to share transparent area
1213, to guarantee the translucency of the display device including above-mentioned dot structure 10, meanwhile, so that luminous zone 1211 and transparent area
1213 can deposited ink and the deposition region of ink is collectively formed, to expand the deposition region of ink, due to the second picture
Element defines layer 130 and is set to transparent area 1213, and the thickness of the second pixel defining layer 130 is less than the first pixel defining layer 120
Thickness advantageously ensures that the translucency of transparent area 1213, and since the second pixel defining layer 130 is lyophoby pixel defining layer,
In printing process, so that the ink for being deposited on 130 surface of the second pixel defining layer can not be in the second pixel defining layer when dry
130 surface pinnings and bounce back to luminous zone 1211, to fail in the surface deposition film of the second pixel defining layer 130, in turn
Improve the translucency of transparent area 1213.The ink dislodger of above-mentioned dot structure 10 is larger, and it is higher and saturating can to prepare resolution ratio
The preferable transparence display device of photosensitiveness.
(2) above-mentioned dot structure 10 passes through the first pixel defining layer 120 for the reflecting electrode 140 of adjacent heterochromatic sub-pixel
Edges cover, can be avoided between light emitting functional layer 150 and the first pixel defining layer 120 that there are gaps, and then avoid showing
The reflecting electrode 140 and transparent electrode 160 of device are short-circuit and generate leakage current.
(3) above-mentioned dot structure 10 passes through the second pixel defining layer 130 for the reflecting electrode 140 of adjacent same sub-pixels
Edges cover, can be avoided between light emitting functional layer 150 and the second pixel defining layer 130 that there are gaps, and then avoid showing
The reflecting electrode 140 and transparent electrode 160 of device are short-circuit and generate leakage current.
It is appreciated that the substrate in substrate 110 can be omitted with flatness layer.When the substrate in substrate 110 is saved with flatness layer
When slightly, substrate 110 is made of TFT drive array.At this point, the first pixel defining layer 120, the second pixel defining layer 130 and reflection
Electrode 140 is all set in TFT drive array.
It is appreciated that the second sub-pixel 104 and concentrated setting of the first sub-pixel 102 of concentrated setting, concentrated setting
Third sub-pixel 106 is not limited to two, and all can be multiple, as long as the area of corresponding sub-pixel can be efficiently reduced
Improve the resolution ratio of display device.For example, pixel unit includes four the first sub-pixels, concentrated settings of concentrated setting
Four third sub-pixels of four the second sub-pixels and concentrated setting.
It is appreciated that light emitting functional layer 150 is not limited to luminescent layer, light emitting functional layer 150 may be to infuse including hole
Enter in layer, hole transmission layer, electronic barrier layer, hole blocking layer, exciton confining layers, electron transfer layer and electron injecting layer at least
One layer and luminescent layer.Preferably, light emitting functional layer 150 includes hole injection layer, hole transmission layer, the electronics being cascading
Barrier layer, luminescent layer, exciton confining layers, hole blocking layer, electron transfer layer and electron injecting layer.Certainly, it should be noted that
Light emitting functional layer 150 is not limited to organic electroluminescent functional layer, light emitting functional layer 150 or quantum dot light emitting function
Layer can also be that the mixed luminescence functional layer formed is combined with organic electroluminescent functional layer by quantum dot light emitting functional layer.
In addition, the utility model also provides transparence display device made of a kind of dot structure 10 an embodiment.
In a wherein embodiment, transparence display device includes dot structure 10.At this time, hence it is evident that show that device can be
Transparent display panel, transparent display or transparent electronics.
In a wherein embodiment, transparence display device is made of dot structure 10.At this point, transparence display device can
Think transparent display panel or transparent electronics.Certainly, it should be noted that transparence display device is not limited to above-mentioned point out device
Part can be transparent amount point luminescent device, or be transparent display.
In addition, the utility model also provides a kind of preparation method of dot structure 10, including as follows also referring to Fig. 3
The operation of S110~S140:
Referring to Figure 4 together, S110, offer substrate 110, form spaced reflecting electrode in the surface of substrate 110
140。
The distance between adjacent reflecting electrode 140 of same sub-pixels is 50 μm~120 in one of the embodiments,
μm。
In one of the embodiments, reflecting electrode 140 with a thickness of 40nm~200nm.
Please refer to fig. 5, S120, making the first pixel defining layer 120 in the surface of substrate 110 and defining with the second pixel
Layer 130, and it is opened in ink dislodger 121 in first pixel defining layer 120, the second pixel defining layer 130 is lyophoby pixel
Define layer.
Specifically, photoresist layer is formed in 110 surface of substrate and 140 surface of reflecting electrode using hydrophobic photoresist, passed through
Exposure mask is exposed photoresist layer, to form the first pixel defining layer 120 and the second pixel defining layer 130, and makes ink
Dislodger 121 is opened in the first pixel defining layer 120.
More specifically, the corresponding region of reflecting electrode 140 carries out full exposure-processed, photoresist layer is all removed and is revealed
Reflecting electrode 140 out, 140 region of reflecting electrode are luminous zone 1211；The reflecting electrode 140 of adjacent same sub-pixels
Between carry out half-exposure processing and remove photoresist layer part, the second pixel defining layer 130 is obtained, where the second pixel defining layer
Region is transparent area 1213；Processing is not exposed between the reflecting electrode 140 of adjacent heterochromatic sub-pixel and makes photoresist layer
It is fully retained, obtains the first pixel defining layer 120, the luminous zone 1211 of adjacent same sub-pixels and the common shape of transparent area 1213
At ink dislodger 121.
The ratio between width of width Yu transparent area 1213 of luminous zone 1211 is 2:1~1:2 in one of the embodiments,.
The width of transparent area 1213 is 50 μm~120 μm in one of the embodiments,.
In one of the embodiments, the first pixel defining layer 120 by the reflecting electrode 140 of adjacent heterochromatic sub-pixel every
From, and cover the edge of the reflecting electrode 140 of adjacent heterochromatic sub-pixel.
In one of the embodiments, the first pixel defining layer 120 with a thickness of 800nm~1500nm.
The second pixel defining layer 130 covers the reflecting electrode 140 of adjacent same sub-pixels in one of the embodiments,
Edge, the reflecting electrode 140 of adjacent same sub-pixels is isolated.
Thickness of the thickness of second pixel defining layer 130 less than the first pixel defining layer 120 in one of the embodiments,
Degree.Further, the first pixel defining layer 120 with a thickness of 800nm~1500nm, the second pixel defining layer 130 with a thickness of
100nm~250nm.
Referring to Figure 6 together, S130, in ink dislodger 121, using printing technology deposited ink, and to deposition
Ink is dried, and forms light emitting functional layer 150.
In a wherein embodiment, light emitting functional layer 150 is located at luminous zone 1211, and is covered in reflecting electrode 140
Surface.
Since the second pixel defining layer 130 is that lyophoby pixel defining layer is deposited on the second pixel and defines in printing process
The ink on 130 surface of layer can not bounce back to luminous zone 1211 in 130 surface pinning of the second pixel defining layer when dry, thus
In the surface noresidue of the second pixel defining layer 130, and then fail to form film in transparent area 1213, so that light emitting functional layer
150 can be only formed in luminous zone 1211 and cover the surface of reflecting electrode 140, and then improve the translucency of transparent area 1213.
In wherein embodiment party example, ink in electroluminescent organic material and quantum dot light emitting material at least
It is a kind of.
In wherein embodiment party example, ink be selected from hole-injecting material, hole mobile material, electron-blocking materials,
Luminescent material, exciton limit at least one of material, hole barrier materials, electron transport material and electron injection material.
In a wherein embodiment, light emitting functional layer 150 with a thickness of 80nm~200nm.
Referring to Fig. 2, transparent electrode 160 S140, is formed, so that transparent electrode 160 is covered in light emitting functional layer 150
Surface and the second pixel defining layer 130 surface.
Transparent electrode 160 is covered in the surface of the first pixel defining layer 110, light-emitting function in one of the embodiments,
150 surface of layer and the surface of the second pixel defining layer 130.
In wherein embodiment party's example, the material of transparent electrode 160 is conductive metal oxide, conductive metal, graphite
Alkene or carbon nano-tube material.
In one of the embodiments, transparent electrode 160 with a thickness of 15nm~200nm.
The preparation method of above-mentioned dot structure 10 is easy to operate, and the ink dislodger 121 being prepared is larger, can prepare
Resolution ratio is higher and the preferable transparent display panel of translucency.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it cannot be understood as the limitations to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (12)
1. a kind of dot structure, including multiple pixel units, each pixel unit includes the sub-pixel of multiple color, special
Sign is that each pixel unit includes:
Substrate；
First pixel defining layer is set on the substrate, and first pixel defining layer offers ink dislodger, adjacent
It is located in the same ink dislodger with sub-pixels, adjacent heterochromatic sub-pixel is isolated by first pixel defining layer,
The ink dislodger includes transparent area and the luminous zone positioned at the transparent area periphery；And
Second pixel defining layer, is set to the transparent area, and second pixel defining layer is transparent, and second pixel
Defining layer is lyophoby pixel defining layer, and the thickness of second pixel defining layer is less than the thickness of first pixel defining layer.
2. dot structure according to claim 1, which is characterized in that first pixel defining layer with a thickness of 800nm
~1500nm, second pixel defining layer with a thickness of 100nm~250nm.
3. dot structure according to claim 1, which is characterized in that first pixel defining layer is that lyophoby pixel defines
The contact angle of layer, second pixel defining layer is greater than 110 °.
4. dot structure according to claim 1, which is characterized in that first pixel defining layer is hydrophobicity photoresist material
The bed of material；And/or
Second pixel defining layer is hydrophobicity photoresist layer.
5. dot structure according to claim 1, which is characterized in that the width of the width of the luminous zone and the transparent area
The ratio between degree is 2:1~1:2.
6. dot structure according to claim 1, which is characterized in that the width of the transparent area is 50 μm~120 μm.
7. dot structure according to claim 1, which is characterized in that including reflecting electrode, the reflecting electrode is set to
On the substrate, and it is located at the luminous zone.
8. dot structure according to claim 7, which is characterized in that first pixel defining layer part covers adjacent institute
State the reflecting electrode of heterochromatic sub-pixel；And/or
Second pixel defining layer part covers the reflecting electrode of the adjacent same sub-pixels.
9. dot structure according to claim 7, which is characterized in that it further include light emitting functional layer, the light emitting functional layer
It is set on the reflecting electrode, and is located in the luminous zone.
10. dot structure according to claim 9, which is characterized in that the light emitting functional layer includes hole injection layer, sky
Cave transport layer, electronic barrier layer, luminescent layer, exciton confining layers, hole blocking layer, electron transfer layer and electron injecting layer, it is described
Electronic barrier layer and the exciton confining layers are respectively laminated on the two sides of the luminescent layer, and the hole transmission layer is laminated in described
Side of the electronic barrier layer far from the luminescent layer, the hole injection layer are laminated in the hole transmission layer far from the electronics
The side on barrier layer, the hole blocking layer are laminated in the side of the exciton confining layers far from the luminescent layer, the electronics
Transport layer is laminated in side of the hole blocking layer far from the exciton confining layers, and the electron injecting layer is laminated in the electricity
Side of the sub- transport layer far from the hole blocking layer.
11. dot structure according to claim 9, which is characterized in that it further include transparent electrode, the transparent electrode covering
In the surface of the light emitting functional layer and the surface of second pixel defining layer.
12. a kind of transparence display device, which is characterized in that including the described in any item dot structures of claim 1~11.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110620133A (en) * | 2019-09-25 | 2019-12-27 | 京东方科技集团股份有限公司 | Transparent display panel, preparation method thereof and display device |
| CN110649078A (en) * | 2019-09-30 | 2020-01-03 | 京东方科技集团股份有限公司 | Substrate for display and display device |
| CN111354870A (en) * | 2020-03-04 | 2020-06-30 | 武汉华星光电半导体显示技术有限公司 | OLED display |
| CN112420795A (en) * | 2020-11-18 | 2021-02-26 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110620133A (en) * | 2019-09-25 | 2019-12-27 | 京东方科技集团股份有限公司 | Transparent display panel, preparation method thereof and display device |
| CN110620133B (en) * | 2019-09-25 | 2022-09-09 | 京东方科技集团股份有限公司 | Transparent display panel, preparation method thereof and display device |
| CN110649078A (en) * | 2019-09-30 | 2020-01-03 | 京东方科技集团股份有限公司 | Substrate for display and display device |
| CN111354870A (en) * | 2020-03-04 | 2020-06-30 | 武汉华星光电半导体显示技术有限公司 | OLED display |
| CN111354870B (en) * | 2020-03-04 | 2021-06-01 | 武汉华星光电半导体显示技术有限公司 | OLED display |
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