WO2022170658A1 - 背光模组及其制作方法、液晶显示装置 - Google Patents

背光模组及其制作方法、液晶显示装置 Download PDF

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Publication number
WO2022170658A1
WO2022170658A1 PCT/CN2021/080729 CN2021080729W WO2022170658A1 WO 2022170658 A1 WO2022170658 A1 WO 2022170658A1 CN 2021080729 W CN2021080729 W CN 2021080729W WO 2022170658 A1 WO2022170658 A1 WO 2022170658A1
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WO
WIPO (PCT)
Prior art keywords
substrate
projection
light
layer
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2021/080729
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English (en)
French (fr)
Inventor
肖军城
李艳
赵斌
李吉
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TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
TCL China Star Optoelectronics Technology Co Ltd
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Filing date
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Application filed by TCL China Star Optoelectronics Technology Co Ltd filed Critical TCL China Star Optoelectronics Technology Co Ltd
Priority to US17/288,664 priority Critical patent/US12001095B2/en
Publication of WO2022170658A1 publication Critical patent/WO2022170658A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133605—Direct backlight including specially adapted reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133612—Electrical details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Definitions

  • the present application relates to the field of display technology, and in particular, to a backlight module and a manufacturing method thereof, and a liquid crystal display device.
  • the backlight module for providing backlight for the liquid crystal display panel occupies as little space of the frame as possible.
  • Traditional backlight modules are mainly composed of light-emitting diodes (Light Emitting Diodes).
  • Emitting Diode, LED) lamp beads according to the different installation positions, the backlight modules can be divided into two types: edge-type backlight modules and direct-type backlight modules. Among them, the edge-type backlight modules are arranged on the liquid crystal display panel.
  • the side of the LCD device with the edge-type backlight module cannot realize the ultra-narrow frame, and the direct-type backlight module is arranged on the back of the liquid crystal display panel, so that the liquid crystal display device with the direct-type backlight module can realize the ultra-narrow frame. , but this will lead to an increase in the overall thickness of the liquid crystal display device.
  • mini-LED mini Light Emitting Diode
  • the mini-LED backlight module uses a smaller mini-LED chip to replace the traditional LED lamp.
  • the mini-LED backlight module By arranging the mini-LED backlight module on the back of the liquid crystal display panel, not only can the liquid crystal display device with the mini-LED backlight module achieve an ultra-narrow frame, but also the overall thickness of the liquid crystal display device can be reduced.
  • the light extraction efficiency of the existing mini-LED backlight module is low.
  • the present application provides a backlight module, a manufacturing method thereof, and a liquid crystal display device to solve the problem of low light extraction efficiency of the existing mini-LED backlight module.
  • the present application provides a backlight module
  • the backlight module includes a substrate, a light-emitting chip and a reflective layer disposed on the substrate; wherein, the reflective layer has a hollow area, and the light-emitting chip is in the The hollow area is electrically connected to the substrate, and the projection of the edge of the hollow area on the substrate is at least partially within the coverage area of the projection of the light-emitting chip on the substrate.
  • the projection of the edge of the hollowed-out area on the substrate is located inside the projection of the light-emitting chip on the substrate, and the edge of the hollowed-out area and the light-emitting chip are on the substrate The distance between the projections is greater than a first predetermined value.
  • the surface of the substrate is provided with a pad layer
  • the light-emitting chip includes a chip body and a pin layer electrically connected to the chip body, and the pin layer passes through a conductive layer in the hollow area electrically connected to the pad layer.
  • the pad layer includes a first pad and a second pad
  • the lead layer includes a first lead and a second lead
  • the conductive layer includes a first conductor and a second conductor
  • the hollow area includes a first hollow sub area and a second hollow sub area
  • the first pin is electrically connected to the first pad through the first conductor in the first hollow sub area
  • the The second pin is electrically connected to the second pad through the second conductor in the second hollow sub-region.
  • the projection of the chip body on the substrate covers a partial projection of the pad layer on the substrate, and the reflective layer is at least partially disposed on the surface of the pad layer.
  • the projection of the chip body on the substrate covers the entire projection of the pad layer on the substrate, and the reflective layer is at least partially disposed on the surface of the substrate.
  • a distance between the reflective layer and the chip body in a direction perpendicular to the substrate is greater than a second predetermined value.
  • the distance between the projection of any one of the conductive layer and the pin layer on the substrate and the projection of the edge of the hollow area on the substrate is greater than a third predetermined value .
  • the material of the reflective layer is white oil.
  • the material of the conductive layer is conductive glue.
  • the present application provides a method for manufacturing a backlight module, wherein the manufacturing method for the backlight module includes:
  • the light-emitting chip is electrically connected to the substrate in the hollow area, wherein the projection of the edge of the hollow area on the substrate is at least partially within the coverage area of the projection of the light-emitting chip on the substrate.
  • the projection of the edge of the hollowed-out area on the substrate is located inside the projection of the light-emitting chip on the substrate, and the edge of the hollowed-out area and the light-emitting chip are on the substrate The distance between the projections is greater than a first predetermined value.
  • the present application provides a liquid crystal display device, the liquid crystal display device includes a liquid crystal display panel and a backlight module; wherein, the backlight module includes a substrate, a light-emitting chip and a reflective layer disposed on the substrate ; wherein, the reflective layer has a hollow area, the light-emitting chip is electrically connected to the substrate in the hollow area, and the projection of the edge of the hollow area on the substrate is at least partially located in the light-emitting chip in the hollow area. within the coverage of the projection on the substrate.
  • the projection of the edge of the hollowed-out area on the substrate is located inside the projection of the light-emitting chip on the substrate, and the edge of the hollowed-out area and the light-emitting chip are on the substrate The distance between the projections is greater than a first predetermined value.
  • the surface of the substrate is provided with a pad layer
  • the light-emitting chip includes a chip body and a pin layer electrically connected to the chip body, and the pin layer passes through a conductive layer in the hollow area electrically connected to the pad layer.
  • the pad layer includes a first pad and a second pad
  • the lead layer includes a first lead and a second lead
  • the conductive layer includes a first conductor and a second conductor
  • the hollow area includes a first hollow sub area and a second hollow sub area
  • the first pin is electrically connected to the first pad through the first conductor in the first hollow sub area
  • the The second pin is electrically connected to the second pad through the second conductor in the second hollow sub-region.
  • the projection of the chip body on the substrate covers a partial projection of the pad layer on the substrate, and the reflective layer is at least partially disposed on the surface of the pad layer.
  • the projection of the chip body on the substrate covers the entire projection of the pad layer on the substrate, and the reflective layer is at least partially disposed on the surface of the substrate.
  • a distance between the reflective layer and the chip body in a direction perpendicular to the substrate is greater than a second predetermined value.
  • the distance between the projection of any one of the conductive layer and the pin layer on the substrate and the projection of the edge of the hollow area on the substrate is greater than a third predetermined value .
  • the light originally irradiated by the light-emitting chip on the substrate, the first pad or the second pad will be irradiated to the reflective layer, and after being reflected by the reflective layer, the light is emitted from the backlight.
  • the module is emitted, thereby improving the luminous efficiency of the backlight module.
  • FIG. 1 is a schematic structural diagram of a backlight module provided by an embodiment of the present application.
  • FIG. 2 is a partial top schematic view of the first backlight module provided by the embodiment of the present application.
  • FIG. 3 is a cross-sectional view of the backlight module shown in FIG. 2 along the line I-I.
  • FIG. 4 is a partial top schematic view of a second backlight module provided by an embodiment of the present application.
  • FIG. 5 is a partial top-view schematic diagram of a third backlight module provided by an embodiment of the present application.
  • FIG. 6 is a cross-sectional view of the backlight module shown in FIG. 5 along line III-III.
  • FIG. 7 is a partial top view schematic diagram of a fourth type of backlight module provided by an embodiment of the present application.
  • FIG. 8 is a flowchart of a manufacturing method of a backlight module provided by an embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of a liquid crystal display device according to an embodiment of the present application.
  • FIG. 1 is a schematic structural diagram of a backlight module provided by an embodiment of the application
  • FIG. 2 is a partial top view schematic diagram of a first backlight module provided by an embodiment of the application
  • FIG. 3 is the backlight module shown in FIG. 2 along the line I-I
  • the backlight module in the embodiment of the present application is a mini-LED backlight module, which is referred to as a backlight module hereinafter for the convenience of description.
  • the backlight module 1 includes a plurality of light-emitting areas 10
  • FIG. 2 only shows a single light-emitting area 10 .
  • the light-emitting area 10 includes a substrate 101 and a Light-emitting chip and reflective layer 103 .
  • the light-emitting chip is a chip capable of emitting light, and the light-emitting chip in the embodiment of the present application is a mini-LED chip;
  • the reflective layer 103 is a functional layer that reflects light, and the reflective layer 103 is arranged on the light-emitting chip to emit light toward the substrate.
  • the reflective layer 103 is used for reflecting the light irradiated by the light-emitting chip to the reflective layer 103 and then emitting from the backlight module, and the reflective layer 103 may be white oil.
  • the reflective layer 103 has a hollow area.
  • the projection of the reflective layer 103 on the substrate 101 includes an outer edge 1031 and an inner edge 1032.
  • the projection of the edge of the hollow area on the substrate 101 is the above-mentioned inner edge 1032.
  • the light-emitting chip is on the hollow area and the substrate 101. electrical connection.
  • the outer edge 1031 surrounds the projection of the light emitting chip on the substrate 101 and has a distance from the projection of the light emitting chip on the substrate 101
  • the inner edge 1032 is at least partially within the coverage of the projection of the light emitting chip on the substrate 101 .
  • the projection of the light-emitting chip on the substrate 101 is a rectangle
  • the outer edge 1031 encloses a closed area and the closed area is a rectangle
  • the outer edge 1031 has a distance from the projection of the light-emitting chip on the substrate 101 .
  • the projection of the light-emitting chip on the substrate 101 can also be a square, a circle or other shapes, which are mainly determined according to the shape of the light-emitting chip
  • the shape of the enclosed area enclosed by the outer edge 1031 can also be a square, a circle Shape or other shapes, those skilled in the art can flexibly adjust according to actual application requirements.
  • the inner edge 1032 encloses a closed area and the closed area is a rectangle, the inner edge 1032 is located inside the projection of the light-emitting chip on the substrate 101, and the distance from the projection of the light-emitting chip on the substrate 101 is greater than a first predetermined value, wherein , the first predetermined value can be flexibly adjusted by those skilled in the art according to actual application requirements.
  • the enclosed area enclosed by the inner edge 1032 can also be a square, a circle or other shapes, which can be flexibly adjusted by those skilled in the art according to actual application requirements; the enclosed area enclosed by the inner edge 1032 can also be connected with the light-emitting chip
  • the projection on the substrate 101 just coincides, that is, there is no distance between the inner edge 1032 and the projection of the light-emitting chip on the substrate 101 .
  • the outer edge 1031 projected by the reflective layer 103 on the substrate 101 surrounds the projection of the light-emitting chip on the substrate 101 and has a distance from the projection of the light-emitting chip on the substrate 101
  • the inner edge 1032 projected by the reflective layer 103 on the substrate 101 is at least partially Since the light-emitting chip is located within the coverage area of the projection of the light-emitting chip on the substrate 101 , the light originally irradiated by the light-emitting chip to the substrate 101 , the first pad 1021 or the second pad 1022 will be irradiated to the reflective layer 103 , and will be reflected by the reflective layer 103 . After reflection, it is emitted from the backlight module, thereby improving the luminous efficiency of the backlight module.
  • the surface of the substrate is provided with a pad layer.
  • the light-emitting chip includes a chip body and a pin layer electrically connected to the chip body.
  • the pin layer is electrically connected to the pad layer in the hollow area through a conductive layer.
  • the pad layer includes a first pad 1021 and a second pad 1022, the first pad 1021 and the second pad 1022 are arranged on the substrate 101 at intervals, and the first pad 1021 and the second pad 1022 are both Electrically connected to an external control circuit.
  • the light-emitting chip includes a chip body 106 and a pin layer electrically connected to the chip body 106, wherein the chip body 106 is mainly composed of a light-emitting circuit for emitting light; the pin layer includes first pins 1051 and second pins 1052 arranged at intervals , the first pin 1051 and the second pin 1052 are the wiring with the peripheral circuit drawn from the light-emitting circuit.
  • the conductive layer includes a first conductor 1041 and a second conductor.
  • the first conductor 1041 and the second conductor can be conductive glue or solder paste.
  • the conductive glue is preferably anisotropic conductive glue.
  • Conductive Film, ACF Conductive Film
  • the pin layer is electrically connected to the pad layer through the conductive layer in the hollow area.
  • the hollow area is an opening structure in the reflective layer 103 , and can also be a plurality of opening structures arranged at intervals in the reflective layer 103 . 2 and FIG. 3
  • the hollow area in the backlight module is an opening structure in the reflective layer 103 .
  • the first lead 1051 is electrically connected to the first pad 1021 through the first conductor 1041 in the hollow area
  • the second lead 1052 is electrically connected to the second pad 1022 through the second conductor in the hollow area, so as to realize light emission
  • the chip is electrically connected with an external control circuit, and the light-emitting chip is controlled on and off through the external control circuit.
  • the projection of the chip body 106 on the substrate 101 covers part of the projection of the pad layer on the substrate 101 , and the reflective layer 103 is at least partially disposed on the surface of the pad layer.
  • the projection of the chip body 106 on the substrate 101 in the backlight module shown in FIGS. 2 and 3 covers part of the projection of the first pad 1021 on the substrate 101 and the projection of the second pad 1022 on the substrate 101 Part of the projection and part of the substrate 101 , the reflective layer 103 is partially disposed on the surface of the first pad 1021 and the second pad 1022 , and the other part of the reflective layer 103 is disposed on the surface of the substrate 101 .
  • the projection of the chip body 106 on the substrate 101 covers the entire projection of the pad layer on the substrate 101, and the reflective layer 103 is at least partially arranged on the surface of the substrate, for example, the reflective layer 103 is partly arranged on the surface of the substrate 101, Another part of the reflective layer 103 is arranged on the surface of the first pad 1021 and the second pad 1022 , and for example, the reflective layer 103 is entirely arranged on the surface of the substrate 101 , that is, the reflective layer 103 , the first pad 1021 and the second pad 102 .
  • the disk 1022 is arranged on the same layer.
  • the distance between the reflective layer 103 and the chip body 106 in the direction perpendicular to the substrate 101 is greater than a second predetermined value.
  • the reflective layer 103 needs to be fabricated first, and then the light-emitting chip is welded to the first pad 1021 and the second pad 1022 in the hollow area of the reflective layer 103 (that is, the solid Therefore, there is a gap between the reflective layer 103 and the chip body 106 , so as to avoid the occurrence of a virtual welding phenomenon of the light-emitting chip during the die bonding operation, and improve the yield of the backlight module.
  • the second predetermined value can be set by combining the manufacturing accuracy of the reflective layer and the crystal bonding accuracy, wherein the manufacturing accuracy of the reflective layer refers to the predetermined size of the reflective layer and the actual size of the reflective layer obtained according to the predetermined size.
  • the error between the two, the die-bonding accuracy refers to the error between the predetermined position of the light-emitting chip during die-bonding and the actual position of the light-emitting chip after the die-bonding is performed according to the predetermined position.
  • the reflective layer 103 is white oil, white oil
  • the value range of the manufacturing precision is 50-100 microns, and the value range of the die-bonding precision is 25-50 microns, so the second predetermined value can be selected as 150 microns to ensure that the actually produced backlight module will not be due to reflection.
  • the influence of layer fabrication accuracy and die-bonding accuracy leads to the occurrence of virtual soldering of light-emitting chips.
  • this value is only an example of the second predetermined value, and does not constitute a limit to it.
  • the second predetermined value can be determined by those skilled in the art. Personnel can be flexibly adjusted according to actual needs.
  • the distance between the projection of any one of the conductive layer and the pin layer on the substrate 101 and the projection of the edge of the hollow area on the substrate 101 is greater than a third predetermined value.
  • the reflective layer 103 is usually white oil, and the white oil is an insulator. If the white oil is in contact with any one of the first conductor 1041 , the second conductor, the first pin 1051 and the second pin 1052 , the Affect the conductivity of the first conductor 1041, the second conductor, the first pin 1051 or the second pin 1052 in contact with the white oil, thereby reducing the light-emitting brightness of the light-emitting chip. Therefore, the first conductor 1041, the second conductor, Both the first lead 1051 and the second lead 1052 are spaced from the reflective layer 103, which can ensure that the brightness of the light-emitting chip is not affected.
  • the third predetermined value can be set by combining the fabrication accuracy of the reflective layer and the crystal bonding accuracy.
  • the reflective layer 103 is made of white oil, and the white oil fabrication accuracy is 50-100 microns.
  • the value range is 25-50 microns, so the third predetermined value can be selected to be 150 microns to ensure that the actually produced backlight module will not cause the reflection layer and the first conductor 1041 due to the influence of the reflective layer manufacturing accuracy and die bonding accuracy.
  • the second conductor, any one of the first pin 1051 and the second pin 1052 is in contact.
  • this value is only an example of the third predetermined value, and does not constitute a limitation to it.
  • the third predetermined value The value can be flexibly adjusted by those skilled in the art according to actual needs.
  • the hollow area can also be a plurality of spaced opening structures in the reflective layer 103.
  • the embodiment of the present application takes the hollow area as an example of two spaced opening structures in the reflective layer 103 for illustration. , the two opening structures of the hollow area are respectively referred to as the first hollow sub-area and the second hollow sub-area.
  • FIG. 4 is a schematic partial top view of the second type of backlight module provided by the embodiment of the present application.
  • the projection of the reflective layer 103 on the substrate 101 includes an outer edge 1031 and an inner edge 1032 , and the inner edge includes 1032 arranged at intervals
  • the projection of the first inner edge 10321 and the second inner edge 10322 of the first hollow sub-region on the substrate 101 is the above-mentioned first inner edge 10321, and the projection of the second hollow sub-region on the substrate 101 is also the above-mentioned second inner edge. Edge 10322.
  • the outer edge 1031 surrounds the projection of the light-emitting chip on the substrate 101 and has a distance from the projection of the light-emitting chip on the substrate 101 , and the first inner edge 10321 and the second inner edge 10322 are at least partially located in the projection of the light-emitting chip on the substrate 101 within the coverage.
  • the projection of the light-emitting chip on the substrate 101 is a rectangle
  • the outer edge 1031 encloses a closed area and the closed area is a rectangle
  • the outer edge 1031 has a distance from the projection of the light-emitting chip on the substrate 101 .
  • the projection of the light-emitting chip on the substrate 101 can also be a square, a circle or other shapes, which are mainly determined according to the shape of the light-emitting chip
  • the shape of the enclosed area enclosed by the outer edge 1031 can also be a square, a circle Shape or other shapes, those skilled in the art can flexibly adjust according to actual application requirements.
  • the first inner edge 10321 encloses a closed area and the closed area is a rectangle, the first inner edge 10321 is located inside the projection of the light-emitting chip on the substrate 101, and the distance from the projection of the light-emitting chip on the substrate 101 is greater than the first The predetermined value, wherein the first predetermined value can be flexibly adjusted by those skilled in the art according to actual application requirements.
  • the enclosed area enclosed by the first inner edge 10321 may also be a square, a circle or other shapes, and those skilled in the art can flexibly adjust it according to actual application requirements; the enclosed area enclosed by the first inner edge 10321 may also be It may just coincide with the projection of the light-emitting chip on the substrate 101 , that is, there is no distance between the first inner edge 10321 and the projection of the light-emitting chip on the substrate 101 .
  • the second inner edge 10322 encloses a closed area and the closed area is rectangular, the second inner edge 10322 is located inside the projection of the light-emitting chip on the substrate 101, and the distance from the projection of the light-emitting chip on the substrate 101 is greater than the first The predetermined value, wherein the first predetermined value can be flexibly adjusted by those skilled in the art according to actual application requirements.
  • the enclosed area enclosed by the second inner edge 10322 can also be a square, a circle or other shapes, and those skilled in the art can flexibly adjust it according to actual application requirements; the enclosed area enclosed by the second inner edge 10322 can also be It may just coincide with the projection of the light-emitting chip on the substrate 101 , that is, there is no distance between the second inner edge 10322 and the projection of the light-emitting chip on the substrate 101 .
  • the light emitting area 10 shown in FIG. 2 and FIG. 3 the light emitting area 10 shown in FIG. That is, the area of the reflective layer 103 is larger, so that the luminous efficiency of the backlight module can be greatly improved.
  • the hollow area can be an opening structure in the reflective layer 103, and the projection of the chip body 106 on the substrate 101 can also cover the entire projection of the pad layer on the substrate 101.
  • the reflective layer 103 is at least partially provided On the surface of the substrate, the embodiment of the present application uses the hollow area as an opening structure in the reflective layer 103 as an example to describe the structure of the backlight module in this case.
  • FIG. 5 is a partial top view of the third backlight module provided by the embodiment of the application
  • FIG. 6 is a cross-sectional view of the backlight module shown in FIG. 5 along the line III-III. As shown in FIG. 5 and FIG.
  • the projection of 103 on the substrate 101 includes an outer edge 1031 and an inner edge 1032 , the projection of the edge of the hollow area on the substrate 101 is the above-mentioned inner edge 1032 , and the light-emitting chip is mounted on the substrate 101 through the hollow area.
  • the outer edge 1031 surrounds the projection of the light emitting chip on the substrate 101 and has a distance from the projection of the light emitting chip on the substrate 101 , and the inner edge 1032 is at least partially within the coverage of the projection of the light emitting chip on the substrate 101 .
  • the projection of the light-emitting chip on the substrate 101 is a rectangle
  • the outer edge 1031 encloses a closed area and the closed area is a rectangle
  • the outer edge 1031 has a distance from the projection of the light-emitting chip on the substrate 101 .
  • the projection of the light-emitting chip on the substrate 101 can also be a square, a circle or other shapes, which are mainly determined according to the shape of the light-emitting chip
  • the shape of the enclosed area enclosed by the outer edge 1031 can also be a square, a circle Shape or other shapes, those skilled in the art can flexibly adjust according to actual application requirements.
  • the inner edge 1032 encloses a closed area and the closed area is a rectangle, the inner edge 1032 is located inside the projection of the light-emitting chip on the substrate 101, and the distance from the projection of the light-emitting chip on the substrate 101 is greater than a first predetermined value, wherein , the first predetermined value can be flexibly adjusted by those skilled in the art according to actual application requirements.
  • the enclosed area enclosed by the inner edge 1032 can also be a square, a circle or other shapes, which can be flexibly adjusted by those skilled in the art according to actual application requirements; the enclosed area enclosed by the inner edge 1032 can also be connected with the light-emitting chip
  • the projection on the substrate 101 just coincides, that is, there is no distance between the inner edge 1032 and the projection of the light-emitting chip on the substrate 101 .
  • the hollow area can also be a plurality of spaced opening structures in the reflective layer 103, and the projection of the chip body 106 on the substrate 101 can also cover the entire projection of the pad layer on the substrate 101.
  • the reflection The layer 103 is at least partially disposed on the surface of the substrate.
  • the structure of the backlight module in this case is described by taking the hollow area as the two spaced opening structures in the reflective layer 103 as an example.
  • the two opening structures of the hollow area are respectively referred to as the first hollow sub area and the second hollow sub area.
  • FIG. 7 is a schematic partial top view of the fourth type of backlight module provided by the embodiment of the present application. As shown in FIG.
  • the projection of the reflective layer 103 on the substrate 101 includes an outer edge 1031 and an inner edge 1032, and the inner edge includes 1032 arranged at intervals
  • the projection of the first inner edge 10321 and the second inner edge 10322 of the first hollow sub-region on the substrate 101 is the above-mentioned first inner edge 10321, and the projection of the second hollow sub-region on the substrate 101 is also the above-mentioned second inner edge. Edge 10322.
  • the outer edge 1031 surrounds the projection of the light-emitting chip on the substrate 101 and has a distance from the projection of the light-emitting chip on the substrate 101 , and the first inner edge 10321 and the second inner edge 10322 are at least partially located in the projection of the light-emitting chip on the substrate 101 within the coverage.
  • the projection of the light-emitting chip on the substrate 101 is a rectangle
  • the outer edge 1031 encloses a closed area and the closed area is a rectangle
  • the outer edge 1031 has a distance from the projection of the light-emitting chip on the substrate 101 .
  • the projection of the light-emitting chip on the substrate 101 can also be a square, a circle or other shapes, which are mainly determined according to the shape of the light-emitting chip
  • the shape of the enclosed area enclosed by the outer edge 1031 can also be a square, a circle Shape or other shapes, those skilled in the art can flexibly adjust according to actual application requirements.
  • the first inner edge 10321 encloses a closed area and the closed area is a rectangle, the first inner edge 10321 is located inside the projection of the light-emitting chip on the substrate 101, and the distance from the projection of the light-emitting chip on the substrate 101 is greater than the first The predetermined value, wherein the first predetermined value can be flexibly adjusted by those skilled in the art according to actual application requirements.
  • the enclosed area enclosed by the first inner edge 10321 may also be a square, a circle or other shapes, and those skilled in the art can flexibly adjust it according to actual application requirements; the enclosed area enclosed by the first inner edge 10321 may also be It may just coincide with the projection of the light-emitting chip on the substrate 101 , that is, there is no distance between the first inner edge 10321 and the projection of the light-emitting chip on the substrate 101 .
  • the second inner edge 10322 encloses a closed area and the closed area is rectangular, the second inner edge 10322 is located inside the projection of the light-emitting chip on the substrate 101, and the distance from the projection of the light-emitting chip on the substrate 101 is greater than the first The predetermined value, wherein the first predetermined value can be flexibly adjusted by those skilled in the art according to actual application requirements.
  • the enclosed area enclosed by the second inner edge 10322 can also be a square, a circle or other shapes, and those skilled in the art can flexibly adjust it according to actual application requirements; the enclosed area enclosed by the second inner edge 10322 can also be It may just coincide with the projection of the light-emitting chip on the substrate 101 , that is, there is no distance between the second inner edge 10322 and the projection of the light-emitting chip on the substrate 101 .
  • FIG. 6 the cross-sectional view of the backlight module shown in FIG. 7 along the line IV-IV is shown in FIG. 6 , because the cross-sectional structure of the backlight module shown in FIG. 6 and the cross-sectional structure of the backlight module shown in FIG. Similar, and the cross-sectional structure of the backlight module shown in FIG. 3 has been described in detail in the above-mentioned embodiment, so it will not be repeated here.
  • the first pads 1021 , the second pads 1022 , the first conductors 1041 , the second conductors, the chip body 106 , the first pins 1051 , the second The dimensions of the lead 1052 and the reflection layer 103 will be described.
  • the first conductor 1041 and the second conductor can be made of relatively thick conductive materials, such as conductive glue (eg ACF) Or use solder paste to make the first conductor 1041 and the second conductor with a thickness of about 35 microns; or use a reflective material to make an ultra-thin reflective layer 103, for example, use white oil to make a thickness of 1-30 microns The reflective layer 103; or increase the first The thicknesses of the pins 1051 and the second pins 1052, so that the thicknesses of the first pins 1051 and the second pins 1052 are between 0.1-50 microns; or increase the thickness of the first pad 1021 and the thickness of the second solder The thickness of the first pad 1021 and the second pad 1022 is between 0.1-50 microns. It should be noted that the above-mentioned various adjustment means can be used simultaneously to ensure that the distance
  • the embodiment of the present application specifically describes the size of the light-emitting area 10 shown in FIG. 2 and FIG. 3 .
  • the length of the light-emitting chip is M
  • the edge of the light-emitting chip is The distance between the edge of the first pin 1051 is L
  • the distance between the edge of the reflective layer 103 and the edge of the first pin 1051 is D
  • the thickness of the reflective layer 103 is T
  • the thickness of the first pin 1051 is Tp
  • the thickness of the first pin 1051 is Tp.
  • the thickness of the conductor 1041 is Tw
  • the distance between the first lead 1051 and the second lead 1052 is A
  • W 15 microns
  • FIG. 8 is a flowchart of a method for manufacturing a backlight module provided by an embodiment of the application. As shown in FIG. 8 , the manufacturing method for a backlight module includes:
  • step S1 a substrate 101 is provided, and a reflective layer 103 having a hollow area is fabricated on the substrate 101 .
  • Step S2 the light-emitting chip is electrically connected to the substrate 101 in the hollow area, wherein the projection of the edge of the hollow area on the substrate 101 is at least partially within the coverage of the projection of the light-emitting chip on the substrate 101 .
  • the structure of the backlight module manufactured by the method provided by the embodiment of the present application has been described in detail in the above embodiment, and will not be repeated here.
  • the reflective layer 103 The inner edge 1032 projected on the substrate 101 is at least partially within the coverage of the projection of the light-emitting chip on the substrate 101 , so the light that the light-emitting chip originally irradiated on the substrate 101 , the first pad 1021 or the second pad 1022 will be irradiated to the reflective layer 103, and is reflected by the reflective layer 103 and then emitted from the backlight module, thereby improving the luminous efficiency of the backlight module.
  • FIG. 9 is a schematic structural diagram of a liquid crystal display device provided by an embodiment of the present application. As shown in FIG. 9 , the liquid crystal display device 100 includes a liquid crystal display panel 2 and the backlight module 1 described in the above embodiments.
  • the structure of the backlight module included in the liquid crystal display device provided in the embodiment of the present application has been described in detail in the above embodiment, and will not be repeated here.
  • the reflective layer 103 The inner edge 1032 projected on the substrate 101 is at least partially within the coverage of the projection of the light-emitting chip on the substrate 101 , so the light that the light-emitting chip originally irradiated on the substrate 101 , the first pad 1021 or the second pad 1022 will be irradiated to the reflective layer 103, and is reflected by the reflective layer 103 and then emitted from the backlight module, thereby improving the luminous efficiency of the backlight module.

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Abstract

一种背光模组及其制作方法、液晶显示装置，背光模组包括基板(101)以及设置在基板(101)上的发光芯片和反射层(103)；其中，反射层(103)具有镂空区，发光芯片在镂空区与基板(101)电连接，镂空区的边缘在基板(101)上的投影至少部分位于发光芯片在基板(101)上的投影的覆盖范围内。

Description

背光模组及其制作方法、液晶显示装置 技术领域
本申请涉及显示技术领域，尤其涉及一种背光模组及其制作方法、液晶显示装置。
 背景技术
由于液晶显示装置逐渐往超窄边框的方向发展，因此要求为液晶显示面板提供背光的背光模组尽可能地少占用边框的空间。传统的背光模组主要由发光二极管（Light Emitting Diode，LED）灯珠构成，按照安装位置的不同，可将背光模组划分为侧入式背光模组和直下式背光模组两种，其中，侧入式背光模组设置在液晶显示面板的侧面，使得具有侧入式背光模组的液晶显示装置无法实现超窄边框，直下式背光模组设置在液晶显示面板的背面，使得具有直下式背光模组的液晶显示装置可实现超窄边框，但这样会导致液晶显示装置的整体厚度增加。
如今发展起来的一种新型的背光模组为次毫米发光二极管(mini Light Emitting Diode，mini-LED)背光模组，mini-LED背光模组使用尺寸更小的mini-LED芯片替代传统的LED灯珠，将mini-LED背光模组设置在液晶显示面板的背面，不仅可使具有mini-LED背光模组的液晶显示装置实现超窄边框，还可降低液晶显示装置的整体厚度。然而，现有的mini-LED背光模组的出光效率较低。
 技术问题
本申请提供一种背光模组及其制作方法、液晶显示装置，以解决现有的mini-LED背光模组出光效率较低的问题。
 技术解决方案
第一方面，本申请提供了一种背光模组，所述背光模组包括基板以及设置在所述基板上的发光芯片和反射层；其中，所述反射层具有镂空区，所述发光芯片在所述镂空区与所述基板电连接，所述镂空区的边缘在所述基板上的投影至少部分位于所述发光芯片在所述基板上的投影的覆盖范围内。
在一些实施例中，所述镂空区的边缘在所述基板上的投影位于所述发光芯片在所述基板上的投影的内部，所述镂空区的边缘与所述发光芯片在所述基板上的投影之间的距离大于第一预定值。
在一些实施例中，所述基板的表面设置有焊盘层，所述发光芯片包括芯片本体以及与所述芯片本体电连接的引脚层，所述引脚层在所述镂空区通过导电层与所述焊盘层电连接。
在一些实施例中，所述焊盘层包括第一焊盘和第二焊盘，所述引脚层包括第一引脚和第二引脚，所述导电层包括第一导体和第二导体，所述镂空区包括第一镂空子区和第二镂空子区，所述第一引脚在所述第一镂空子区通过所述第一导体与所述第一焊盘电连接，所述第二引脚在所述第二镂空子区通过所述第二导体与所述第二焊盘电连接。
在一些实施例中，所述芯片本体在所述基板上的投影覆盖所述焊盘层在所述基板上的部分投影，所述反射层至少部分设置于所述焊盘层的表面。
在一些实施例中，所述芯片本体在所述基板上的投影覆盖所述焊盘层在所述基板上的全部投影，所述反射层至少部分设置于所述基板的表面。
在一些实施例中，所述反射层与所述芯片本体在垂直于所述基板的方向上的距离大于第二预定值。
在一些实施例中，所述导电层和所述引脚层中任一者在所述基板上的投影与所述镂空区的边缘在所述基板上的投影之间的距离大于第三预定值。
在一些实施例中，所述反射层的材料为白油。
在一些实施例中，所述导电层的材料为导电胶。
第二方面，本申请提供了一种背光模组的制作方法，其中，所述背光模组的制作方法包括：
提供基板，在所述基板上制作具有镂空区的反射层；
将发光芯片在所述镂空区与所述基板电连接，其中，所述镂空区的边缘在所述基板上的投影至少部分位于所述发光芯片在所述基板上的投影的覆盖范围内。
在一些实施例中，所述镂空区的边缘在所述基板上的投影位于所述发光芯片在所述基板上的投影的内部，所述镂空区的边缘与所述发光芯片在所述基板上的投影之间的距离大于第一预定值。
第三方面，本申请提供了一种液晶显示装置，所述液晶显示装置包括液晶显示面板和背光模组；其中，所述背光模组包括基板以及设置在所述基板上的发光芯片和反射层；其中，所述反射层具有镂空区，所述发光芯片在所述镂空区与所述基板电连接，所述镂空区的边缘在所述基板上的投影至少部分位于所述发光芯片在所述基板上的投影的覆盖范围内。
在一些实施例中，所述镂空区的边缘在所述基板上的投影位于所述发光芯片在所述基板上的投影的内部，所述镂空区的边缘与所述发光芯片在所述基板上的投影之间的距离大于第一预定值。
在一些实施例中，所述基板的表面设置有焊盘层，所述发光芯片包括芯片本体以及与所述芯片本体电连接的引脚层，所述引脚层在所述镂空区通过导电层与所述焊盘层电连接。
在一些实施例中，所述焊盘层包括第一焊盘和第二焊盘，所述引脚层包括第一引脚和第二引脚，所述导电层包括第一导体和第二导体，所述镂空区包括第一镂空子区和第二镂空子区，所述第一引脚在所述第一镂空子区通过所述第一导体与所述第一焊盘电连接，所述第二引脚在所述第二镂空子区通过所述第二导体与所述第二焊盘电连接。
在一些实施例中，所述芯片本体在所述基板上的投影覆盖所述焊盘层在所述基板上的部分投影，所述反射层至少部分设置于所述焊盘层的表面。
在一些实施例中，所述芯片本体在所述基板上的投影覆盖所述焊盘层在所述基板上的全部投影，所述反射层至少部分设置于所述基板的表面。
在一些实施例中，所述反射层与所述芯片本体在垂直于所述基板的方向上的距离大于第二预定值。
在一些实施例中，所述导电层和所述引脚层中任一者在所述基板上的投影与所述镂空区的边缘在所述基板上的投影之间的距离大于第三预定值。
 有益效果
本申请提供的背光模组及其制作方法、液晶显示装置，发光芯片原本照射至基板、第一焊盘或第二焊盘上的光会照射至反射层，并被反射层进行反射后从背光模组射出，从而提升背光模组的发光效率。
 附图说明
图1为本申请实施例提供的背光模组的结构示意图。
图2为本申请实施例提供的第一种背光模组的局部俯视示意图。
图3为图2所示的背光模组沿I-I线的剖视图。
图4为本申请实施例提供的第二种背光模组的局部俯视示意图。
图5为本申请实施例提供的第三种背光模组的局部俯视示意图。
图6为图5所示的背光模组沿III-III线的剖视图。
图7为本申请实施例提供的第四种背光模组的局部俯视示意图。
图8为本申请实施例提供的背光模组的制作方法的流程图。
图9为本申请实施例提供的液晶显示装置的结构示意图。
 本发明的实施方式
为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
图1为本申请实施例提供的背光模组的结构示意图，图2为本申请实施例提供的第一种背光模组的局部俯视示意图，图3为图2所示的背光模组沿I-I线的剖视图，需要说明的是，本申请实施例中的背光模组为mini-LED背光模组，为了便于描述，后文均将其简称为背光模组。如图1所示，背光模组1包括多个发光区10，图2仅示出了单个发光区10，如图2和图3所示，发光区10包括基板101以及设置在基板101上的发光芯片和反射层103。其中，发光芯片为能够发光的芯片，本申请实施例中的发光芯片为mini-LED芯片；反射层103为对光具有反射作用的功能层，反射层103设置在发光芯片发出的光射向基板101途径的光路上，反射层103用于将发光芯片照射至反射层103的光进行反射后从背光模组射出，反射层103可为白油。
反射层103具有镂空区，反射层103在基板101上的投影包括外边缘1031和内边缘1032，镂空区的边缘在基板101上的投影也即上述内边缘1032，发光芯片在镂空区与基板101电连接。其中，外边缘1031围绕发光芯片在基板101上的投影，且与发光芯片在基板101上的投影具有间距，内边缘1032至少部分位于发光芯片在基板101上的投影的覆盖范围内。
具体而言，发光芯片在基板101上的投影为长方形，外边缘1031围成封闭区域且该封闭区域为长方形，外边缘1031与发光芯片在基板101上的投影具有间距。需要说明的是，发光芯片在基板101上的投影还可为正方形、圆形或其他形状，其主要根据发光芯片的形状而定；外边缘1031围成的封闭区域的形状还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整。
内边缘1032围成封闭区域且该封闭区域为长方形，内边缘1032位于发光芯片在基板101上的投影的内部，且与发光芯片在基板101上的投影之间的距离大于第一预定值，其中，第一预定值可由本领域技术人员根据实际应用需求进行灵活调整。需要说明的是，内边缘1032围成的封闭区域还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整；内边缘1032围成的封闭区域还可与发光芯片在基板101上的投影刚好重合，也即内边缘1032与发光芯片在基板101上的投影无间距。
由于反射层103在基板101上投影的外边缘1031围绕发光芯片在基板101上的投影，且与发光芯片在基板101上的投影具有间距，反射层103在基板101上投影的内边缘1032至少部分位于发光芯片在基板101上的投影的覆盖范围内，因此发光芯片原本照射至基板101、第一焊盘1021或第二焊盘1022上的光会照射至反射层103，并被反射层103进行反射后从背光模组射出，从而提升背光模组的发光效率。
如图2和图3所示，基板的表面设置有焊盘层，发光芯片包括芯片本体以及与芯片本体电连接的引脚层，引脚层在镂空区通过导电层与焊盘层电连接。
具体而言，焊盘层包括第一焊盘1021和第二焊盘1022，第一焊盘1021和第二焊盘1022间隔设置在基板101上，第一焊盘1021和第二焊盘1022均与外部控制电路电连接。发光芯片包括芯片本体106以及与芯片本体106电连接的引脚层，其中芯片本体106主要由发光电路构成，用于发光；引脚层包括间隔设置的第一引脚1051和第二引脚1052，第一引脚1051和第二引脚1052为从发光电路引出的与外围电路的接线。导电层包括第一导体1041和第二导体，第一导体1041和第二导体可为导电胶或锡膏，导电胶优选为异方性导电胶(Anisotropic Conductive Film，ACF)。
引脚层在镂空区通过导电层与焊盘层电连接，需要说明的是，镂空区为反射层103中的一个开口结构，也可为反射层103中的多个间隔设置的开口结构，图2和图3所示的背光模组中的镂空区为反射层103中的一个开口结构。具体而言，第一引脚1051在镂空区通过第一导体1041与第一焊盘1021电连接，第二引脚1052在镂空区通过第二导体与第二焊盘1022电连接，从而实现发光芯片与外部控制电路电连接，通过外部控制电路控制发光芯片的亮灭。
如图2和图3所示，芯片本体106在基板101上的投影覆盖焊盘层在基板101上的部分投影，反射层103至少部分设置于焊盘层的表面。
具体而言，图2和图3所示的背光模组中的芯片本体106在基板101上的投影覆盖第一焊盘1021在基板101上的部分投影、第二焊盘1022在基板101上的部分投影和部分基板101，反射层103部分设置于第一焊盘1021和第二焊盘1022的表面，反射层103另一部分设置于基板101的表面。需要说明的是，芯片本体106在基板101上的投影覆盖焊盘层在基板101上的全部投影，反射层103至少部分设置于基板的表面，例如，反射层103部分设置于基板101的表面，反射层103另一部分设置于第一焊盘1021和第二焊盘1022的表面，又例如，反射层103全部设置于基板101的表面，也即反射层103、第一焊盘1021和第二焊盘1022同层设置。
如图2和图3所示，反射层103与芯片本体106在垂直于基板101的方向上的距离大于第二预定值。
具体而言，在背光模组的制作过程中，需要先制作反射层103，再将发光芯片在反射层103的镂空区分别与第一焊盘1021和第二焊盘1022进行焊接（也即固晶），因此，使反射层103与芯片本体106存在间距，从而避免发光芯片在固晶作业中虚焊现象的发生，提升背光模组的良率。
需要说明的是，第二预定值可综合反射层制作精度和固晶精度来进行设定，其中，反射层制作精度指的是反射层的预定尺寸与根据预定尺寸制得的反射层的实际尺寸之间的误差，固晶精度指的是固晶时发光芯片的预定位置与根据预定位置进行固晶后发光芯片的实际位置之间的误差，一般来说，反射层103为白油，白油制作精度的取值范围为50-100微米，固晶精度的取值范围为25-50微米，因此可以将第二预定值选取为150微米，以确保实际制得的背光模组不会因为反射层制作精度和固晶精度的影响导致发光芯片虚焊现象的发生，当然，该取值仅为第二预定值的一种举例，并不构成对其的限制，第二预定值可由本领域技术人员根据实际需求由进行灵活调整。
如图2和图3所示，导电层和引脚层中任一者在基板101上的投影与镂空区的边缘在基板101上的投影之间的距离大于第三预定值。
具体而言，反射层103通常为白油，白油为绝缘体，若白油与第一导体1041、第二导体、第一引脚1051和第二引脚1052中的任一者接触，则会影响与白油接触的第一导体1041、第二导体、第一引脚1051或第二引脚1052的导电性，从而降低发光芯片的发光亮度，因此，使第一导体1041、第二导体、第一引脚1051和第二引脚1052均与反射层103存在间距，能够保证发光芯片的亮度不受影响。
需要说明的是，第三预定值可综合反射层制作精度和固晶精度来进行设定，一般来说，反射层103为白油，白油制作精度为50-100微米，固晶精度的取值范围为25-50微米，因此可以将第三预定值选取为150微米，以确保实际制得的背光模组不会因为反射层制作精度和固晶精度的影响导致反射层与第一导体1041、第二导体、第一引脚1051和第二引脚1052中的任一者接触，当然，该取值仅为第三预定值的一种举例，并不构成对其的限制，第三预定值可由本领域技术人员根据实际需求由进行灵活调整。
以下，对本申请实施例提供的背光模组的其他变形结构进行说明。
由上述实施例可知，镂空区还可为反射层103中的多个间隔设置的开口结构，本申请实施例以镂空区为反射层103中的两个间隔设置的开口结构为例进行说明，此时，将镂空区的两个开口结构分别称为第一镂空子区和第二镂空子区。
图4为本申请实施例提供的第二种背光模组的局部俯视示意图，如图4所示，反射层103在基板101上的投影包括外边缘1031和内边缘1032，内边缘包括1032间隔设置的第一内边缘10321和第二内边缘10322，第一镂空子区在基板101上的投影也即上述第一内边缘10321，第二镂空子区在基板101上的投影也即上述第二内边缘10322。其中，外边缘1031围绕发光芯片在基板101上的投影，且与发光芯片在基板101上的投影具有间距，第一内边缘10321和第二内边缘10322至少部分位于发光芯片在基板101上的投影的覆盖范围内。
具体而言，发光芯片在基板101上的投影为长方形，外边缘1031围成封闭区域且该封闭区域为长方形，外边缘1031与发光芯片在基板101上的投影具有间距。需要说明的是，发光芯片在基板101上的投影还可为正方形、圆形或其他形状，其主要根据发光芯片的形状而定；外边缘1031围成的封闭区域的形状还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整。
第一内边缘10321围成封闭区域且该封闭区域为长方形，第一内边缘10321位于发光芯片在基板101上的投影的内部，且与发光芯片在基板101上的投影之间的距离大于第一预定值，其中，第一预定值可由本领域技术人员根据实际应用需求进行灵活调整。需要说明的是，第一内边缘10321围成的封闭区域还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整；第一内边缘10321围成的封闭区域还可与发光芯片在基板101上的投影刚好重合，也即第一内边缘10321与发光芯片在基板101上的投影无间距。
第二内边缘10322围成封闭区域且该封闭区域为长方形，第二内边缘10322位于发光芯片在基板101上的投影的内部，且与发光芯片在基板101上的投影之间的距离大于第一预定值，其中，第一预定值可由本领域技术人员根据实际应用需求进行灵活调整。需要说明的是，第二内边缘10322围成的封闭区域还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整；第二内边缘10322围成的封闭区域还可与发光芯片在基板101上的投影刚好重合，也即第二内边缘10322与发光芯片在基板101上的投影无间距。
需要说明的是，图4所示的背光模组沿II-II线的剖视图如图3所示，由于图3所示的背光模组的剖面结构在上述实施例中已详细说明，因此此处不再赘述。
可以理解的是，图4所示的发光区10相较于图2和图3所示的发光区10而言，第一镂空子区与第二镂空子区之间还设置有反射层103，即，反射层103的面积更大，从而能够更大幅度地提升背光模组的发光效率。
由上述实施例可知，镂空区可为反射层103中的一个开口结构，芯片本体106在基板101上的投影还可覆盖焊盘层在基板101上的全部投影，此时反射层103至少部分设置于基板的表面，本申请实施例以镂空区为反射层103中的一个开口结构为例对该种情况下的背光模组的结构进行说明。图5为本申请实施例提供的第三种背光模组的局部俯视示意图，图6为图5所示的背光模组沿III-III线的剖视图，如图5和图6所示，反射层103在基板101上的投影包括外边缘1031和内边缘1032，镂空区的边缘在基板101上的投影也即上述内边缘1032，发光芯片通过镂空区安装于基板101上。其中，外边缘1031围绕发光芯片在基板101上的投影，且与发光芯片在基板101上的投影具有间距，内边缘1032至少部分位于发光芯片在基板101上的投影的覆盖范围内。
具体而言，发光芯片在基板101上的投影为长方形，外边缘1031围成封闭区域且该封闭区域为长方形，外边缘1031与发光芯片在基板101上的投影具有间距。需要说明的是，发光芯片在基板101上的投影还可为正方形、圆形或其他形状，其主要根据发光芯片的形状而定；外边缘1031围成的封闭区域的形状还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整。
内边缘1032围成封闭区域且该封闭区域为长方形，内边缘1032位于发光芯片在基板101上的投影的内部，且与发光芯片在基板101上的投影之间的距离大于第一预定值，其中，第一预定值可由本领域技术人员根据实际应用需求进行灵活调整。需要说明的是，内边缘1032围成的封闭区域还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整；内边缘1032围成的封闭区域还可与发光芯片在基板101上的投影刚好重合，也即内边缘1032与发光芯片在基板101上的投影无间距。
由上述实施例可知，镂空区还可为反射层103中的多个间隔设置的开口结构，芯片本体106在基板101上的投影还可覆盖焊盘层在基板101上的全部投影，此时反射层103至少部分设置于基板的表面，本申请实施例以镂空区为反射层103中的两个间隔设置的开口结构为例对该种情况下的背光模组的结构进行说明，此时，将镂空区的两个开口结构分别称为第一镂空子区和第二镂空子区。图7为本申请实施例提供的第四种背光模组的局部俯视示意图，如图7所示，反射层103在基板101上的投影包括外边缘1031和内边缘1032，内边缘包括1032间隔设置的第一内边缘10321和第二内边缘10322，第一镂空子区在基板101上的投影也即上述第一内边缘10321，第二镂空子区在基板101上的投影也即上述第二内边缘10322。其中，外边缘1031围绕发光芯片在基板101上的投影，且与发光芯片在基板101上的投影具有间距，第一内边缘10321和第二内边缘10322至少部分位于发光芯片在基板101上的投影的覆盖范围内。
具体而言，发光芯片在基板101上的投影为长方形，外边缘1031围成封闭区域且该封闭区域为长方形，外边缘1031与发光芯片在基板101上的投影具有间距。需要说明的是，发光芯片在基板101上的投影还可为正方形、圆形或其他形状，其主要根据发光芯片的形状而定；外边缘1031围成的封闭区域的形状还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整。
第一内边缘10321围成封闭区域且该封闭区域为长方形，第一内边缘10321位于发光芯片在基板101上的投影的内部，且与发光芯片在基板101上的投影之间的距离大于第一预定值，其中，第一预定值可由本领域技术人员根据实际应用需求进行灵活调整。需要说明的是，第一内边缘10321围成的封闭区域还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整；第一内边缘10321围成的封闭区域还可与发光芯片在基板101上的投影刚好重合，也即第一内边缘10321与发光芯片在基板101上的投影无间距。
第二内边缘10322围成封闭区域且该封闭区域为长方形，第二内边缘10322位于发光芯片在基板101上的投影的内部，且与发光芯片在基板101上的投影之间的距离大于第一预定值，其中，第一预定值可由本领域技术人员根据实际应用需求进行灵活调整。需要说明的是，第二内边缘10322围成的封闭区域还可为正方形、圆形或其他形状，本领域技术人员可根据实际应用需求进行灵活调整；第二内边缘10322围成的封闭区域还可与发光芯片在基板101上的投影刚好重合，也即第二内边缘10322与发光芯片在基板101上的投影无间距。
需要说明的是，图7所示的背光模组沿IV-IV线的剖视图如图6所示，由于图6所示的背光模组的剖面结构与图3所示的背光模组的剖面结构相似，而图3所示的背光模组的剖面结构在上述实施例中已详细说明，因此此处不再赘述。
可以理解的是，图7所示的发光区10相较于图5和图6所示的发光区10而言，第一镂空子区与第二镂空子区之间还设置有反射层103，即，反射层103的面积更大，从而能够更大幅度地提升背光模组的发光效率。
作为一个优选的实施例，本申请实施例对发光区10中的第一焊盘1021、第二焊盘1022、第一导体1041、第二导体、芯片本体106、第一引脚1051、第二引脚1052和反射层103的尺寸进行说明。
为了使反射层103与芯片本体106在垂直于基板101的方向上的距离大于第二预定值，可采用导电材料制作比较厚的第一导体1041和第二导体，例如使用导电胶（例如ACF）或锡膏制作厚度约35微米的第一导体1041和第二导体；或采用反射材料制作超薄的反射层103，例如使用白油制作厚度为1-30微米的反射层103；或增加第一引脚1051和第二引脚1052的厚度，使第一引脚1051和第二引脚1052的厚度的取值位于0.1-50微米之间；或增加第一焊盘1021的厚度和第二焊盘1022，使第一焊盘1021和第二焊盘1022的厚度的取值位于0.1-50微米之间。需要说明的是，上述多种调整手段可同时使用，以确保反射层103与芯片本体106在垂直于基板101的方向上的距离大于第二预定值。
作为一个优选的实施例，本申请实施例对图2和图3所示的发光区10的尺寸进行具体说明，如图2和图3所示，发光芯片的长度为M，发光芯片的边缘与第一引脚1051的边缘的距离为L，反射层103的边缘与第一引脚1051的边缘的距离为D，反射层103的厚度为T，第一引脚1051的厚度为Tp，第一导体1041的厚度为Tw，第一引脚1051与第二引脚1052的距离为A，第一引脚1051的宽度为W，其中，W=（M-2L-A）/2。其中，W>15微米，L>33微米，A>21微米，M>80微米。
图8为本申请实施例提供的背光模组的制作方法的流程图，如图8所示，背光模组的制作方法包括：
步骤S1，提供基板101，在基板101上制作具有镂空区的反射层103。
步骤S2，将发光芯片在镂空区与基板101电连接，其中，镂空区的边缘在基板101上的投影至少部分位于发光芯片在基板101上的投影的覆盖范围内。
需要说明的是，通过本申请实施例提供的方法制作得到的背光模组的结构在上述实施例中已详细说明，此处不再赘述。在背光模组的每个发光区中，由于反射层103在基板101上投影的外边缘1031围绕发光芯片在基板101上的投影，且与发光芯片在基板101上的投影具有间距，反射层103在基板101上投影的内边缘1032至少部分位于发光芯片在基板101上的投影的覆盖范围内，因此发光芯片原本照射至基板101、第一焊盘1021或第二焊盘1022上的光会照射至反射层103，并被反射层103进行反射后从背光模组射出，从而提升背光模组的发光效率。
图9为本申请实施例提供的液晶显示装置的结构示意图，如图9所示，液晶显示装置100包括液晶显示面板2和上述实施例中所述的背光模组1。
需要说明的是，本申请实施例提供的液晶显示装置包括的背光模组的结构在上述实施例中已详细说明，此处不再赘述。在背光模组的每个发光区中，由于反射层103在基板101上投影的外边缘1031围绕发光芯片在基板101上的投影，且与发光芯片在基板101上的投影具有间距，反射层103在基板101上投影的内边缘1032至少部分位于发光芯片在基板101上的投影的覆盖范围内，因此发光芯片原本照射至基板101、第一焊盘1021或第二焊盘1022上的光会照射至反射层103，并被反射层103进行反射后从背光模组射出，从而提升背光模组的发光效率。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其申请构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (20)

  1. 一种背光模组，其中，所述背光模组包括基板以及设置在所述基板上的发光芯片和反射层；其中，所述反射层具有镂空区，所述发光芯片在所述镂空区与所述基板电连接，所述镂空区的边缘在所述基板上的投影至少部分位于所述发光芯片在所述基板上的投影的覆盖范围内。
  2. 根据权利要求1所述的背光模组，其中，所述镂空区的边缘在所述基板上的投影位于所述发光芯片在所述基板上的投影的内部，所述镂空区的边缘与所述发光芯片在所述基板上的投影之间的距离大于第一预定值。
  3. 根据权利要求1所述的背光模组，其中，所述基板的表面设置有焊盘层，所述发光芯片包括芯片本体以及与所述芯片本体电连接的引脚层，所述引脚层在所述镂空区通过导电层与所述焊盘层电连接。
  4. 根据权利要求3所述的背光模组，其中，所述焊盘层包括第一焊盘和第二焊盘，所述引脚层包括第一引脚和第二引脚，所述导电层包括第一导体和第二导体，所述镂空区包括第一镂空子区和第二镂空子区，所述第一引脚在所述第一镂空子区通过所述第一导体与所述第一焊盘电连接，所述第二引脚在所述第二镂空子区通过所述第二导体与所述第二焊盘电连接。
  5. 根据权利要求3所述的背光模组，其中，所述芯片本体在所述基板上的投影覆盖所述焊盘层在所述基板上的部分投影，所述反射层至少部分设置于所述焊盘层的表面。
  6. 根据权利要求3所述的背光模组，其中，所述芯片本体在所述基板上的投影覆盖所述焊盘层在所述基板上的全部投影，所述反射层至少部分设置于所述基板的表面。
  7. 根据权利要求3所述的背光模组，其中，所述反射层与所述芯片本体在垂直于所述基板的方向上的距离大于第二预定值。
  8. 根据权利要求3所述的背光模组，其中，所述导电层和所述引脚层中任一者在所述基板上的投影与所述镂空区的边缘在所述基板上的投影之间的距离大于第三预定值。
  9. 根据权利要求1所述的背光模组，其中，所述反射层的材料为白油。
  10. 根据权利要求3所述的背光模组，其中，所述导电层的材料为导电胶。
  11. 一种背光模组的制作方法，其中，所述背光模组的制作方法包括：
    提供基板，在所述基板上制作具有镂空区的反射层；
    将发光芯片在所述镂空区与所述基板电连接，其中，所述镂空区的边缘在所述基板上的投影至少部分位于所述发光芯片在所述基板上的投影的覆盖范围内。
  12. 根据权利要求11所述的背光模组的制作方法，其中，所述镂空区的边缘在所述基板上的投影位于所述发光芯片在所述基板上的投影的内部，所述镂空区的边缘与所述发光芯片在所述基板上的投影之间的距离大于第一预定值。
  13. 一种液晶显示装置，其中，所述液晶显示装置包括液晶显示面板和背光模组；其中，所述背光模组包括基板以及设置在所述基板上的发光芯片和反射层；其中，所述反射层具有镂空区，所述发光芯片在所述镂空区与所述基板电连接，所述镂空区的边缘在所述基板上的投影至少部分位于所述发光芯片在所述基板上的投影的覆盖范围内。
  14. 根据权利要求13所述的液晶显示装置，其中，所述镂空区的边缘在所述基板上的投影位于所述发光芯片在所述基板上的投影的内部，所述镂空区的边缘与所述发光芯片在所述基板上的投影之间的距离大于第一预定值。
  15. 根据权利要求13所述的液晶显示装置，其中，所述基板的表面设置有焊盘层，所述发光芯片包括芯片本体以及与所述芯片本体电连接的引脚层，所述引脚层在所述镂空区通过导电层与所述焊盘层电连接。
  16. 根据权利要求15所述的液晶显示装置，其中，所述焊盘层包括第一焊盘和第二焊盘，所述引脚层包括第一引脚和第二引脚，所述导电层包括第一导体和第二导体，所述镂空区包括第一镂空子区和第二镂空子区，所述第一引脚在所述第一镂空子区通过所述第一导体与所述第一焊盘电连接，所述第二引脚在所述第二镂空子区通过所述第二导体与所述第二焊盘电连接。
  17. 根据权利要求15所述的液晶显示装置，其中，所述芯片本体在所述基板上的投影覆盖所述焊盘层在所述基板上的部分投影，所述反射层至少部分设置于所述焊盘层的表面。
  18. 根据权利要求15所述的液晶显示装置，其中，所述芯片本体在所述基板上的投影覆盖所述焊盘层在所述基板上的全部投影，所述反射层至少部分设置于所述基板的表面。
  19. 根据权利要求15所述的液晶显示装置，其中，所述反射层与所述芯片本体在垂直于所述基板的方向上的距离大于第二预定值。
  20. 根据权利要求15所述的液晶显示装置，其中，所述导电层和所述引脚层中任一者在所述基板上的投影与所述镂空区的边缘在所述基板上的投影之间的距离大于第三预定值。
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