WO2022166259A1 - 一种具有台阶电极的rgb器件及制备方法 - Google Patents

一种具有台阶电极的rgb器件及制备方法 Download PDF

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WO2022166259A1
WO2022166259A1 PCT/CN2021/124678 CN2021124678W WO2022166259A1 WO 2022166259 A1 WO2022166259 A1 WO 2022166259A1 CN 2021124678 W CN2021124678 W CN 2021124678W WO 2022166259 A1 WO2022166259 A1 WO 2022166259A1
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electrode
rgb
stepped
substrate
conductive
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French (fr)
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李宗涛
李家声
汤勇
丁鑫锐
余彬海
陈勇军
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South China University of Technology SCUT
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Definitions

  • the invention relates to the technical field of LED devices, in particular to an RGB device with stepped electrodes and a preparation method.
  • RGB devices have been widely used in various display products, and when RGB devices on the market are mounted on circuit boards, there are often bonding wires in contact with the circuit board, resulting in unstable RGB devices. Moreover, since the RGB chip reflects more external light sources, the contrast ratio of the device is not high. This is some technical contradiction at present.
  • the purpose of the present invention is to provide an RGB device with stepped electrodes and a preparation method thereof.
  • An RGB device with stepped electrodes comprising:
  • a base plate which is arranged on the carrier board, and the base plate is provided with through holes;
  • the conductive electrode is arranged on the substrate, the conductive electrode has a stepped structure, the conductive electrode includes an upper surface of the electrode and a lower surface of the electrode, the upper surface of the electrode is used for welding circuit boards, and the lower surface of the electrode uses bonding line connecting the RGB chip;
  • the conductive electrode includes an upper surface of the electrode and a lower surface of the electrode, the upper surface of the electrode is used for soldering the circuit board, and the lower surface of the electrode is used to connect the RGB chip.
  • the height distance between the upper surface of the electrode and the lower surface of the electrode is 0.05-0.5 mm, and the height distance between the lower surface of the electrode and the substrate is 0.05-0.3 mm.
  • the projection of the lower surface of the electrode on the carrier is partially overlapped with the projection of the substrate on the carrier.
  • the light-emitting surface of the RGB chip faces the carrier board, and the electrode surface on the back of the RGB chip is opaque to light.
  • the filling height of the low-reflection colloid is higher than the lower surface of the electrode and lower than the upper surface of the electrode.
  • the shape of the through hole is a square or a circle.
  • the conductive electrodes are processed by mechanical cutting, metal etching, metal printing or a combination of the three methods.
  • the carrier is glass, plastic or film with a transmittance greater than 50% and a thickness of less than 0.3 mm;
  • the base plate is made of opaque insulating material, and the base plate is bonded to the carrier plate by an adhesive;
  • the low-reflection colloid is black colloid or gray colloid.
  • a preparation method of an RGB device comprising the following steps:
  • the copper foil is processed to obtain an electrode structure
  • the electrode structure is processed to obtain a stepped conductive electrode, including:
  • the electrode structure is processed by the method of half-etching copper foil to obtain a step-like conductive electrode; or,
  • the electrode structure is processed by the method of printing metal to obtain a step-like conductive electrode; or,
  • the electrode structure is processed by a mechanical cutting method to obtain a stepped conductive electrode.
  • the beneficial effects of the present invention are: by adopting the conductive electrodes of the stepped structure, the present invention avoids the direct contact of the bonding wire with the circuit board when the RGB device is installed on the circuit board, and ensures the stability of the circuit structure.
  • the contrast ratio of RGB devices can be effectively improved by injecting low-reflection colloids.
  • FIG. 1 is a schematic structural diagram of an RGB device with stepped electrodes in an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a substrate and a copper foil being bonded, and a circular hole is drilled on the top according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of an electrode structure formed by a method of machining or etching metal in an embodiment of the present invention
  • FIG. 4 is a schematic diagram of forming a stepped electrode structure by a method of half etching or mechanical cutting in an embodiment of the present invention
  • FIG. 5 is a schematic diagram of forming a stepped electrode structure by a method of printing metal in an embodiment of the present invention
  • FIG. 6 is a schematic diagram of adding a carrier plate under the substrate, placing a chip, and connecting the electrode and the chip through a bonding wire in an embodiment of the present invention
  • FIG. 7 is a schematic diagram of injecting low-reflection colloid from above the through hole to completely cover the chip and the bonding wire according to the embodiment of the present invention.
  • FIG. 8 is a schematic diagram of cutting the entire board into a single RGB device by cutting in an embodiment of the present invention.
  • FIG. 9 is a schematic diagram of welding an RGB device on a circuit board in an embodiment of the present invention.
  • FIG. 10 is a schematic diagram showing that the substrate and the copper foil are bonded, and a square hole is drilled thereon in an embodiment of the present invention.
  • the azimuth description such as the azimuth or position relationship indicated by up, down, front, rear, left, right, etc.
  • the azimuth description is based on the azimuth or position relationship shown in the drawings, only In order to facilitate the description of the present invention and simplify the description, it is not indicated or implied that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
  • the meaning of several is one or more, the meaning of multiple is two or more, greater than, less than, exceeding, etc. are understood as not including this number, above, below, within, etc. are understood as including this number. If it is described that the first and the second are only for the purpose of distinguishing technical features, it cannot be understood as indicating or implying relative importance, or indicating the number of the indicated technical features or the order of the indicated technical features. relation.
  • this embodiment provides a high-contrast RGB device with a stepped electrode structure, including: a carrier board 1 , the carrier board is provided with a substrate 2 with through holes 6 , and a stepped structure is provided on the substrate.
  • the conductive electrode 3 has a built-in RGB chip 4.
  • the RGB chip 4 is connected with the step electrode 3 (ie, the conductive electrode) by bonding wires.
  • the stepped electrode structure includes an electrode upper surface 3-1 and an electrode lower surface 3-2, wherein the electrode upper surface is used for soldering circuit boards, and the electrode lower surface is used for connecting RGB chips.
  • 1(a) is a front view of the RGB device
  • FIG. 1(b) is a top view of the RGB device.
  • the step electrode structure includes an electrode upper surface 3-1 and an electrode lower surface 3-2, wherein the electrode upper surface is used for soldering circuit boards, the electrode lower surface is used for connecting RGB chips, and the electrode upper surface is used for connecting RGB chips.
  • the height between 3-1 and the electrode lower surface 3-2 is 0.05-0.3 mm, and the height between the electrode lower surface 3-2 and the substrate 2 is 0.05-0.5 mm.
  • the step electrode 3 structure is formed by mechanical cutting, metal etching, metal printing, or a combination of the three methods.
  • the material of the step electrode is one of metals with good electrical conductivity such as silver, copper and aluminum, preferably copper.
  • the bonding wire is a metal with good electrical conductivity, such as gold, silver, copper, etc., preferably gold.
  • the bonding wires connect the positive or negative electrodes of the three chips (RGB chips include three chips) to the same step electrode, and the other electrodes of the three chips are respectively connected to the other three step electrodes, so as to form a A structure that individually controls the luminous intensity of a single chip.
  • the three chips emit different proportions of red, green and blue light through currents of different sizes to adjust the color of the light.
  • the RGB chip is cured and fixed by a low-reflection colloid, and the surrounding low-reflection colloid can absorb most of the external light, which can greatly increase the black ratio of the device, thereby improving the contrast of the RGB device.
  • the RGB chips are first placed on the carrier board, and the chips and the step electrodes are connected by bonding wires.
  • the three chips emit different proportions of red, green and blue light through currents of different sizes to adjust the color of the light.
  • the RGB chip is cured and fixed by a low-reflection colloid, and the surrounding low-reflection colloid can absorb most of the external light, which can greatly increase the black ratio of the device, thereby improving the contrast ratio of the RGB device.
  • the substrate of the single RGB device has at least one hole, and each hole has at least one group of RGB devices.
  • the carrier plate is glass, plastic or film with a transmittance greater than 50% and a thickness of less than 0.3 mm.
  • the substrate is an opaque insulating material such as a BT board, an FR4 board or a black epoxy resin doped with carbon particles, preferably a black material.
  • the low-reflection colloid filled in the cavity is black colloid or gray colloid, preferably black colloid, and its reflective degree should be lower than 30%.
  • the present embodiment provides a preparation method of an RGB device, comprising the following steps:
  • FIG. 2( a ) is a cross-sectional view after the copper foil and the substrate are bonded and punched
  • FIG. 2( b ) is a top view after the copper foil and the substrate are bonded and punched.
  • FIG. 3(a) is a cross-sectional view of the electrode structure and the substrate
  • FIG. 3(b) is a top view of the electrode structure and the substrate.
  • FIG. 4 is a cross-sectional view of the conductive electrode and the substrate
  • FIG. 4( b ) is a top view of the conductive electrode and the substrate.
  • FIG. 6(a) is the cross-sectional view of the RGB device without glue injection
  • Figure 6(b) is the top view of the RGB device without glue injection
  • Figure 7(a) is the cross-sectional view of the RGB device after glue injection
  • Figure 7 (b) is the top view of the RGB device after injection.
  • FIG. 8(a) is a cross-sectional view of a single RGB device
  • FIG. 8(b) is a top view of a single RGB device.
  • FIG. 9( a ) is a cross-sectional view of being welded to the circuit board
  • FIG. 9( b ) is a top view of being welded to the circuit board.
  • This embodiment provides a preparation method of an RGB device, and the preparation steps are the same as those in Embodiment 1, except that:
  • step C the method of processing the step electrode is different, and here the step electrode structure is processed by the method of mechanical cutting.
  • This embodiment provides a preparation method of an RGB device, and the preparation steps are the same as those in Embodiment 1, except that:
  • step C the method of processing the step electrode is different.
  • the step electrode structure is processed by the method of printing metal, as shown in FIG. 5 .
  • 5( a ) is a cross-sectional view of the conductive electrode and the substrate
  • FIG. 5( b ) is a top view of the conductive electrode and the substrate.
  • This embodiment provides a preparation method of an RGB device, and the preparation steps are the same as those in Embodiment 1, except that:
  • Fig. 10(a) is a cross-sectional view of the RGB device with square holes after injection
  • Fig. 10(b) is a top view of the RGB device with square holes after injection.
  • This embodiment provides a preparation method of an RGB device, and the preparation steps are the same as those in Embodiment 1, except that:
  • the adhesive material used in step D is different, here a debondable material is used, and the carrier plate can be removed by debonding.
  • this embodiment provides a high-contrast RGB device with stepped electrodes, which is used to solve the problem of circuit stability when the RGB device is installed on a circuit board.
  • the method of half etching, mechanical cutting or printing metal forms the electrode of the step structure, which avoids the direct contact of the bonding wire with the circuit board when the RGB device is installed on the circuit board, and ensures the stability of the circuit structure.
  • a removable carrier is glued under the substrate, RGB chips are placed above the carrier, the chips and step electrodes are connected by bonding wires, and low-reflection colloid is injected from above for curing to protect the complete chip and bonding wire structure.
  • this structure The contrast ratio of the RGB device can be effectively improved.
  • the functions/operations noted in the block diagrams may occur out of the order noted in the operational diagrams.
  • two blocks shown in succession may, in fact, be executed substantially concurrently or the blocks may sometimes be executed in the reverse order, depending upon the functionality/operations involved.
  • the embodiments presented and described in the flowcharts of the present invention are provided by way of example in order to provide a more comprehensive understanding of the technology. The disclosed methods are not limited to the operations and logic flows presented herein. Alternative embodiments are contemplated in which the order of the various operations are altered and in which sub-operations described as part of larger operations are performed independently.
  • the functions, if implemented in the form of software functional units and sold or used as independent products, may be stored in a computer-readable storage medium.
  • the technical solution of the present invention can be embodied in the form of a software product in essence, or the part that contributes to the prior art or the part of the technical solution.
  • the computer software product is stored in a storage medium, including Several instructions are used to cause a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention.
  • the aforementioned storage medium includes: U disk, mobile hard disk, Read-Only Memory (ROM, Read-Only Memory), Random Access Memory (RAM, Random Access Memory), magnetic disk or optical disk and other media that can store program codes .
  • a "computer-readable medium” can be any device that can contain, store, communicate, propagate, or transport the program for use by or in connection with an instruction execution system, apparatus, or apparatus.
  • computer readable media include the following: electrical connections with one or more wiring (electronic devices), portable computer disk cartridges (magnetic devices), random access memory (RAM), Read Only Memory (ROM), Erasable Editable Read Only Memory (EPROM or Flash Memory), Fiber Optic Devices, and Portable Compact Disc Read Only Memory (CDROM).
  • the computer readable medium may even be paper or other suitable medium on which the program may be printed, as it may be possible, for example, by optically scanning the paper or other medium, followed by editing, interpretation or other suitable medium as necessary process to obtain the program electronically and then store it in computer memory.
  • various parts of the present invention may be implemented in hardware, software, firmware or a combination thereof.
  • various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system.
  • a suitable instruction execution system For example, if implemented in hardware, as in another embodiment, it can be implemented by any one or a combination of the following techniques known in the art: Discrete logic circuits, application specific integrated circuits with suitable combinational logic gates, Programmable Gate Arrays (PGA), Field Programmable Gate Arrays (FPGA), etc.

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Abstract

本发明公开了一种具有台阶电极的RGB器件及制备方法，其中RGB器件包括：载板；基板，设置在所述载板上，所述基板上设有通孔；RGB芯片，通过所述通孔设置在所述载板上；导电电极，设置在所述基板上，所述导电电极呈台阶结构，所述导电电极包括电极上表面和电极下表面，所述电极上表面用于焊接线路板，所述电极下表面使用键合线连接所述RGB芯片；低反光胶体，用于覆盖所述RGB芯片和所述键合线。本发明通过采用台阶结构的导电电极，避免将RGB器件安装在线路板时发生键合线直接接触线路板的情况，保证了电路结构的稳定性。另外，通过注入低反光胶体，可有效提高RGB器件的对比度。本发明可广泛应用于LED器件技术领域。

Description

一种具有台阶电极的RGB器件及制备方法 技术领域
本发明涉及LED器件技术领域，尤其涉及一种具有台阶电极的RGB器件及制备方法。
背景技术
RGB器件已经广泛运用在各种显示产品中，而市面上的RGB器件安装在线路板上时，多存在键合线与线路板相接触，导致RGB器件不稳定的情况。并且，由于RGB芯片反射较多外界光源，会导致器件对比度不高。这是目前一些技术上的矛盾。
发明内容
为至少一定程度上解决现有技术中存在的技术问题之一，本发明的目的在于提供一种具有台阶电极的RGB器件及制备方法。
本发明所采用的技术方案是：
一种具有台阶电极的RGB器件，包括：
载板；
基板，设置在所述载板上，所述基板上设有通孔；
RGB芯片，通过所述通孔设置在所述载板上；
导电电极，设置在所述基板上，所述导电电极呈台阶结构，所述导电电极包括电极上表面和电极下表面，所述电极上表面用于焊接线路板，所述电极下表面使用键合线连接所述RGB芯片；
低反光胶体，用于覆盖所述RGB芯片和所述键合线。
进一步，所述导电电极包括电极上表面和电极下表面，所述电极上表面用于焊接线路板，所述电极下表面用于连接所述RGB芯片。
进一步，所述电极上表面和所述电极下表面之间的高度距离为0.05-0.5mm，所述电极下表面和所述基板之间的高度距离为0.05-0.3mm。
进一步，所述电极下表面在所述载板的投影与所述基板在所述载板的投影部分重叠。
进一步，所述RGB芯片的发光面朝向载板，所述RGB芯片背部的电极面不透光。
进一步，所述低反光胶体的填充高度高于所述电极下表面，且低于所述电极上表面。
进一步，所述通孔的形状为方形或圆形。
进一步，所述导电电极通过机械切割加工、蚀刻金属、印刷金属或者三种方法混合加工 而成。
进一步，所述载板为透光度大于50％、厚度小于0.3mm的玻璃、塑料或薄膜；
所述基板采用不透光绝缘材料制成，所述基板采用粘接剂与所述载板黏合；
所述低反光胶体为黑色胶体或灰色胶体。
本发明所采用的另一技术方案是：
一种RGB器件的制备方法，包括以下步骤：
将铜箔与基板黏合后，在所述铜箔和所述基板上打多个通孔；
每个所述通孔上，对所述铜箔进行加工，获得电极结构；
对电极结构进行加工，获得具有台阶状的导电电极；
在所述基板下方粘合载板，通过所述通孔在所述载板上放置RGB芯片；
通过键合线连接所述RGB芯片和所述导电电极；
从所述通孔的上方注入低反光胶体固化，覆盖所述RGB芯片和所述键合线；
通过切割，获得多个RGB器件。
进一步，所述对电极结构进行加工，获得具有台阶状的导电电极，包括：
通过半蚀刻铜箔的方法对电极结构进行加工，获得具有台阶状的导电电极；或者，
采用印刷金属的方法对电极结构进行加工，获得具有台阶状的导电电极；或者，
通过机械切割加工的方法对电极结构进行加工，获得具有台阶状的导电电极。
本发明的有益效果是：本发明通过采用台阶结构的导电电极，避免将RGB器件安装在线路板时发生键合线直接接触线路板的情况，保证了电路结构的稳定性。另外，通过注入低反光胶体，可有效提高RGB器件的对比度。
附图说明
为了更清楚地说明本发明实施例或者现有技术中的技术方案，下面对本发明实施例或者现有技术中的相关技术方案附图作以下介绍，应当理解的是，下面介绍中的附图仅仅为了方便清晰表述本发明的技术方案中的部分实施例，对于本领域的技术人员而言，在无需付出创造性劳动的前提下，还可以根据这些附图获取到其他附图。
图1是本发明实施例中一种具有台阶电极的RGB器件的结构示意图；
图2是本发明实施例中基板与铜箔黏合，在上面打通圆孔的示意图；
图3是本发明实施例中通过机械加工或蚀刻金属的方法形成电极结构示意图；
图4是本发明实施例中通过半蚀刻或机械切割加工的方法形成台阶状电极结构的示意图；
图5是本发明实施例中通过印刷金属的方法形成台阶状电极结构的示意图；
图6是本发明实施例中在基板下添加载板，并放置芯片，通过键合线连接电极和芯片示意图；
图7是本发明实施例中从通孔的上方注入低反光胶体，完整覆盖芯片和键合线的示意图；
图8是本发明实施例中通过切割，将整板切割为单个RGB器件示意图；
图9是本发明实施例中RGB器件焊接在线路板上示意图；
图10是本发明实施例中基板与铜箔黏合，在上面打通方孔的示意图。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。对于以下实施例中的步骤编号，其仅为了便于阐述说明而设置，对步骤之间的顺序不做任何限定，实施例中的各步骤的执行顺序均可根据本领域技术人员的理解来进行适应性调整。
在本发明的描述中，需要理解的是，涉及到方位描述，例如上、下、前、后、左、右等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明的描述中，若干的含义是一个或者多个，多个的含义是两个以上，大于、小于、超过等理解为不包括本数，以上、以下、以内等理解为包括本数。如果有描述到第一、第二只是用于区分技术特征为目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量或者隐含指明所指示的技术特征的先后关系。
本发明的描述中，除非另有明确的限定，设置、安装、连接等词语应做广义理解，所属技术领域技术人员可以结合技术方案的具体内容合理确定上述词语在本发明中的具体含义。
如图1所示，本实施例提供一种具有台阶电极结构的高对比度RGB器件，包括：载板1，所述载板上设有带通孔6的基板2，基板上设有台阶结构的导电电极3，内置RGB芯片4，RGB芯片4与台阶电极3(即导电电极)通过键合线连接，腔体内充满低反光胶体5，低反光胶体上表面高度大于等于金线高度。所述台阶电极结构包括电极上表面3-1和电极下表面3-2，其中电极上表面用于焊接线路板，电极下表面用于连接RGB芯片。其中，图1(a)为RGB器件的正视图，图1(b)为RGB器件的俯视图。
进一步作为可选的实施方式，所述台阶电极结构包括电极上表面3-1和电极下表面3-2， 其中电极上表面用于焊接线路板，电极下表面用于连接RGB芯片，电极上表面3-1和电极下表面3-2之间的高度为0.05-0.3mm，电极下表面3-2到基板2之间的高度为0.05-0.5mm。
进一步作为可选的实施方式，所述台阶电极3结构通过机械切割加工、蚀刻金属、印刷金属或者三种方法混合加工而成。
进一步作为可选的实施方式，所述台阶电极的材质为银、铜和铝等导电性能良好的金属的一种，优选铜。
进一步作为可选的实施方式，键合线为导电性能良好的金属，如金、银、铜等，优选金。其中，键合线将三个芯片(RGB芯片包括三个芯片)的正极或负极连接在同一个台阶电极上，三个芯片的另一电极分别连接在另外三个台阶电极上，以此形成可单独控制单个芯片发光强度的结构。三个芯片通过不同大小的电流，发出不同比例的红绿蓝光，调节出光颜色。RGB芯片通过低反光胶体固化固定芯片，周围低反光胶体可吸收大部分外界光，可大幅度提高器件的黑占比，从而提高RGB器件的对比度。
进一步作为可选的实施方式，所述RGB芯片先置于载板上，通过键合线连接芯片与台阶电极，三个芯片通过不同大小的电流，发出不同比例的红绿蓝光，调节出光颜色。所述RGB芯片通过低反光胶体固化固定芯片，周围低反光胶体可吸收大部分外界光，可大幅度提高器件的黑占比，从而提高RGB器件的对比度。
进一步作为可选的实施方式，所述的单个RGB器件其基板至少有一个洞，每个洞至少有一组RGB器件。
进一步作为可选的实施方式，载板为透光度大于50％、厚度小于0.3mm的玻璃、塑料或薄膜。
进一步作为可选的实施方式，基板为BT板、FR4板或掺杂碳颗粒的黑色环氧树脂等不透光绝缘材料，优选黑色材料。
进一步作为可选的实施方式，腔体内填充的低反光胶体为黑色胶体或灰色胶体，优选黑色胶体，其反光度应低于30％。
实施例1
本实施例提供一种RGB器件的制备方法，包括以下步骤：
A.将铜箔7与基板2黏合在一起，在铜箔7与基板2上打通孔6，该通孔6用于放置芯片与填充低反光胶体，如图2所示。其中，图2(a)为铜箔与基板黏合打孔后的截面图，图2(b)为铜箔与基板黏合打孔后的俯视图。
B.通过蚀刻或机械加工的方法，加工出电极结构，如图3所示。其中，图3(a)为电 极结构和基板的截面图，图3(b)为电极结构和基板的俯视图。
C.通过半蚀刻或半机械切割铜箔的方法，加工出具有台阶状的导电电极，如图4所示。其中，图4(a)为导电电极和基板的截面图，图4(b)为导电电极和基板的俯视图。
D.在基板下方通过粘性材料粘合载板，在载板上放置RGB芯片，通过键合线连接芯片和台阶电极，如图6所示。最后从上方注入低反光胶体固化，低反光胶体高度大于等于金线高度，如图7所示。其中，图6(a)为RGB器件未注胶时的截面图，图6(b)为RGB器件未注胶时的俯视图；图7(a)为RGB器件注胶后的截面图，图7(b)为RGB器件注胶后的俯视图。
E.通过切割的方法，将整板切割成单个RGB器件，如图8所示。其中，图8(a)为单个RGB器件的截面图，图8(b)为单个RGB器件的俯视图。
F.将上述的单个RGB器件焊接到线路板上，如图9所示。其中，图9(a)为焊接到线路板上的截面图，图9(b)为焊接到线路板上的俯视图。
实施例2
本实施例提供一种RGB器件的制备方法，制备步骤与实施例1相同，不同之处在于：
步骤C中加工台阶电极方法不同，这里采用机械切割加工的方法加工台阶电极结构。
实施例3
本实施例提供一种RGB器件的制备方法，制备步骤与实施例1相同，不同之处在于：
步骤C中加工台阶电极方法不同，这里采用印刷金属的方法加工台阶电极结构，如图5所示。其中，图5(a)为导电电极和基板的截面图，图5(b)为导电电极和基板的俯视图。
实施例4
本实施例提供一种RGB器件的制备方法，制备步骤与实施例1相同，不同之处在于：
步骤A加工的通孔形状不同，这里通孔形状为方形，如图10所示。图10(a)为打方孔的RGB器件注胶后的截面图，图10(b)为打方孔的RGB器件注胶后的俯视图。
实施例5
本实施例提供一种RGB器件的制备方法，制备步骤与实施例1相同，不同之处在于：
步骤D中使用的粘性材料不同，这里使用可解粘性材料，可通过解粘性去除载板。
综上所述，本实施例提供一种具有台阶电极的高对比度RGB器件，用于解决所述RGB器件安装在线路板时电路稳定性的问题，所述RGB器件基板与导电金属粘合，通过半蚀刻、机械切割或印刷金属的方法，形成台阶结构的电极，避免了将RGB器件安装在线路板时发生键合线直接接触线路板的情况，保证了电路结构的稳定性。同时在基板下方黏合可拆除的载 板，在载板上方放置RGB芯片，通过键合线连接芯片与台阶电极，从上方注入低反光胶体固化，保护完整的芯片和键合线结构，同时此结构可以有效提高RGB器件的对比度。
在一些可选择的实施例中，在方框图中提到的功能/操作可以不按照操作示图提到的顺序发生。例如，取决于所涉及的功能/操作，连续示出的两个方框实际上可以被大体上同时地执行或所述方框有时能以相反顺序被执行。此外，在本发明的流程图中所呈现和描述的实施例以示例的方式被提供，目的在于提供对技术更全面的理解。所公开的方法不限于本文所呈现的操作和逻辑流程。可选择的实施例是可预期的，其中各种操作的顺序被改变以及其中被描述为较大操作的一部分的子操作被独立地执行。
此外，虽然在功能性模块的背景下描述了本发明，但应当理解的是，除非另有相反说明，所述的功能和/或特征中的一个或多个可以被集成在单个物理装置和/或软件模块中，或者一个或多个功能和/或特征可以在单独的物理装置或软件模块中被实现。还可以理解的是，有关每个模块的实际实现的详细讨论对于理解本发明是不必要的。更确切地说，考虑到在本文中公开的装置中各种功能模块的属性、功能和内部关系的情况下，在工程师的常规技术内将会了解该模块的实际实现。因此，本领域技术人员运用普通技术就能够在无需过度试验的情况下实现在权利要求书中所阐明的本发明。还可以理解的是，所公开的特定概念仅仅是说明性的，并不意在限制本发明的范围，本发明的范围由所附权利要求书及其等同方案的全部范围来决定。
所述功能如果以软件功能单元的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。
在流程图中表示或在此以其他方式描述的逻辑和/或步骤，例如，可以被认为是用于实现逻辑功能的可执行指令的定序列表，可以具体实现在任何计算机可读介质中，以供指令执行系统、装置或设备(如基于计算机的系统、包括处理器的系统或其他可以从指令执行系统、装置或设备取指令并执行指令的系统)使用，或结合这些指令执行系统、装置或设备而使用。就本说明书而言，“计算机可读介质”可以是任何可以包含、存储、通信、传播或传输程序以供指令执行系统、装置或设备或结合这些指令执行系统、装置或设备而使用的装置。
计算机可读介质的更具体的示例(非穷尽性列表)包括以下：具有一个或多个布线的电连接部(电子装置)，便携式计算机盘盒(磁装置)，随机存取存储器(RAM)，只读存储器(ROM)，可擦除可编辑只读存储器(EPROM或闪速存储器)，光纤装置，以及便携式光盘只读存储器(CDROM)。另外，计算机可读介质甚至可以是可在其上打印所述程序的纸或其他合适的介质，因为可以例如通过对纸或其他介质进行光学扫描，接着进行编辑、解译或必要时以其他合适方式进行处理来以电子方式获得所述程序，然后将其存储在计算机存储器中。
应当理解，本发明的各部分可以用硬件、软件、固件或它们的组合来实现。在上述实施方式中，多个步骤或方法可以用存储在存储器中且由合适的指令执行系统执行的软件或固件来实现。例如，如果用硬件来实现，和在另一实施方式中一样，可用本领域公知的下列技术中的任一项或他们的组合来实现：具有用于对数据信号实现逻辑功能的逻辑门电路的离散逻辑电路，具有合适的组合逻辑门电路的专用集成电路，可编程门阵列(PGA)，现场可编程门阵列(FPGA)等。
在本说明书的上述描述中，参考术语“一个实施方式/实施例”、“另一实施方式/实施例”或“某些实施方式/实施例”等的描述意指结合实施方式或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施方式或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。
尽管已经示出和描述了本发明的实施方式，本领域的普通技术人员可以理解：在不脱离本发明的原理和宗旨的情况下可以对这些实施方式进行多种变化、修改、替换和变型，本发明的范围由权利要求及其等同物限定。
以上是对本发明的较佳实施进行了具体说明，但本发明并不限于上述实施例，熟悉本领域的技术人员在不违背本发明精神的前提下还可做作出种种的等同变形或替换，这些等同的变形或替换均包含在本申请权利要求所限定的范围内。

Claims (10)

  1. 一种具有台阶电极的RGB器件，其特征在于，包括：
    载板；
    基板，设置在所述载板上，所述基板上设有通孔；
    RGB芯片，通过所述通孔设置在所述载板上；
    导电电极，设置在所述基板上，所述导电电极呈台阶结构，所述导电电极包括电极上表面和电极下表面，所述电极上表面用于焊接线路板，所述电极下表面使用键合线连接所述RGB芯片；
    低反光胶体，用于覆盖所述RGB芯片和所述键合线。
  2. 根据权利要求1所述的一种具有台阶电极的RGB器件，其特征在于，所述电极上表面和所述电极下表面之间的高度距离为0.05-0.5mm，所述电极下表面和所述基板之间的高度距离为0.05-0.3mm。
  3. 根据权利要求1所述的一种具有台阶电极的RGB器件，其特征在于，所述电极下表面在所述载板的投影与所述基板在所述载板的投影部分重叠。
  4. 根据权利要求1所述的一种具有台阶电极的RGB器件，其特征在于，所述RGB芯片的发光面朝向载板，所述RGB芯片背部的电极面不透光。
  5. 根据权利要求1所述的一种具有台阶电极的RGB器件，其特征在于，所述低反光胶体的填充高度高于所述电极下表面，且低于所述电极上表面。
  6. 根据权利要求1所述的一种具有台阶电极的RGB器件，其特征在于，所述通孔的形状为方形或圆形。
  7. 根据权利要求1所述的一种具有台阶电极的RGB器件，其特征在于，所述导电电极通过机械切割加工、蚀刻金属、印刷金属或者三种方法混合加工而成。
  8. 根据权利要求1所述的一种具有台阶电极的RGB器件，其特征在于，所述载板为透光度大于50％、厚度小于0.3mm的玻璃、塑料或薄膜；
    所述基板采用不透光绝缘材料制成，所述基板采用粘接剂与所述载板黏合；
    所述低反光胶体为黑色胶体或灰色胶体。
  9. 一种RGB器件的制备方法，其特征在于，包括以下步骤：
    将铜箔与基板黏合后，在所述铜箔和所述基板上打多个通孔；
    每个所述通孔上，对所述铜箔进行加工，获得电极结构；
    对电极结构进行加工，获得具有台阶状的导电电极；
    在所述基板下方粘合载板，通过所述通孔在所述载板上放置RGB芯片；
    通过键合线连接所述RGB芯片和所述导电电极；
    从所述通孔的上方注入低反光胶体固化，覆盖所述RGB芯片和所述键合线；
    通过切割，获得多个RGB器件。
  10. 根据权利要求9所述的一种RGB器件的制备方法，其特征在于，所述对电极结构进行加工，获得具有台阶状的导电电极，包括：
    通过半蚀刻铜箔的方法对电极结构进行加工，获得具有台阶状的导电电极；或者，
    采用印刷金属的方法对电极结构进行加工，获得具有台阶状的导电电极；或者，
    通过机械切割加工的方法对电极结构进行加工，获得具有台阶状的导电电极。
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